ATE532105T1 - Beleuchtungsmethode - Google Patents

Beleuchtungsmethode

Info

Publication number
ATE532105T1
ATE532105T1 AT08865442T AT08865442T ATE532105T1 AT E532105 T1 ATE532105 T1 AT E532105T1 AT 08865442 T AT08865442 T AT 08865442T AT 08865442 T AT08865442 T AT 08865442T AT E532105 T1 ATE532105 T1 AT E532105T1
Authority
AT
Austria
Prior art keywords
optical element
diffractive optical
intensity distribution
desired intensity
illumination system
Prior art date
Application number
AT08865442T
Other languages
English (en)
Inventor
Erich Schubert
Alexander Kohl
Gerhard-Wilhelm Ziegler
Michael Patra
Markus Deguenther
Michael Layh
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Application granted granted Critical
Publication of ATE532105T1 publication Critical patent/ATE532105T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
AT08865442T 2007-12-21 2008-12-13 Beleuchtungsmethode ATE532105T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1601907P 2007-12-21 2007-12-21
PCT/EP2008/010622 WO2009080231A1 (en) 2007-12-21 2008-12-13 Illumination system for illuminating a mask in a microlithographic exposure apparatus

Publications (1)

Publication Number Publication Date
ATE532105T1 true ATE532105T1 (de) 2011-11-15

Family

ID=40427997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08865442T ATE532105T1 (de) 2007-12-21 2008-12-13 Beleuchtungsmethode

Country Status (5)

Country Link
US (5) US8467031B2 (de)
EP (3) EP2388650B1 (de)
JP (1) JP5554245B2 (de)
AT (1) ATE532105T1 (de)
WO (1) WO2009080231A1 (de)

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US20100283978A1 (en) * 2009-05-07 2010-11-11 Ultratech,Inc. LED-based UV illuminators and lithography systems using same
US8164046B2 (en) 2009-07-16 2012-04-24 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
JP5337304B2 (ja) * 2009-07-17 2013-11-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置及びそこに収容される光学面に関連するパラメータを測定する方法
DE102009045217B3 (de) 2009-09-30 2011-04-07 Carl Zeiss Smt Gmbh Katadioptrisches Projektionsobjektiv
JP5565263B2 (ja) * 2009-11-06 2014-08-06 株式会社ニコン 液晶表示素子の製造方法及び露光装置
EP2354853B1 (de) * 2010-02-09 2013-01-02 Carl Zeiss SMT GmbH Optisches Rasterelement, optischer Integrator und Beleuchtungssystem eines mikrolithografischen Projektionsbelichtungsgerätes
WO2011141046A1 (en) * 2010-04-23 2011-11-17 Carl Zeiss Smt Gmbh Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system
DE102010030089A1 (de) 2010-06-15 2011-12-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102010062779A1 (de) * 2010-12-10 2012-06-14 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
WO2012100791A1 (en) * 2011-01-29 2012-08-02 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
DE102011052046A1 (de) * 2011-07-21 2013-01-24 Wavelabs Solar Metrology Systems Gmbh Vorrichtung zur Generierung einer homogen ausgeleuchteten Fläche und korrespondierendes Verfahren
DE102011079777A1 (de) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren
US8823921B2 (en) 2011-08-19 2014-09-02 Ultratech, Inc. Programmable illuminator for a photolithography system
WO2013115208A1 (ja) * 2012-02-03 2013-08-08 株式会社ニコン 伝送光学系、照明光学系、露光装置、およびデバイス製造方法
DE102012205790B4 (de) * 2012-04-10 2015-02-05 Carl Zeiss Smt Gmbh Vorrichtung zur Homogenisierung von Laserstrahlung sowie Verfahren zu ihrer Herstellung
US8845163B2 (en) 2012-08-17 2014-09-30 Ultratech, Inc. LED-based photolithographic illuminator with high collection efficiency
CN105008997B (zh) * 2013-02-25 2017-03-08 Asml荷兰有限公司 离散源掩模优化
US8755114B1 (en) 2013-06-14 2014-06-17 Computer Power Supply, Inc. Apparatus for aiding manual, mechanical alignment of optical equipment
CN103412465B (zh) * 2013-07-01 2015-04-15 中国科学院上海光学精密机械研究所 步进扫描投影光刻机的照明系统
US9575412B2 (en) 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
EP3224675A1 (de) 2014-11-27 2017-10-04 Carl Zeiss SMT GmbH Lithographievorrichtung mit einer vielzahl von einzeln ansteuerbaren schreibköpfen
CN104375392B (zh) * 2014-12-12 2016-08-17 中国科学院光电技术研究所 一种实现自由照明光瞳的微反射镜阵列控制方法
DE102015214302B4 (de) * 2015-04-28 2021-02-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Erzeugung zweidimensionaler Beleuchtungsmuster und Vorrichtung zur optischen Bestimmung von Geschwindigkeitsfeldern in Fluidströmungen
DE102015225262A1 (de) * 2015-12-15 2017-06-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
FR3056696B1 (fr) * 2016-09-28 2021-04-16 Valeo Vision Dispositif lumineux compact de projection d'image variable
US10012544B2 (en) * 2016-11-29 2018-07-03 Cymer, Llc Homogenization of light beam for spectral feature metrology
DE102017208340A1 (de) * 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
US10418540B2 (en) 2017-11-28 2019-09-17 International Business Machines Corporation Adjustment of qubit frequency through annealing
US10355193B2 (en) 2017-11-28 2019-07-16 International Business Machines Corporation Flip chip integration on qubit chips
US10340438B2 (en) 2017-11-28 2019-07-02 International Business Machines Corporation Laser annealing qubits for optimized frequency allocation
US10170681B1 (en) 2017-11-28 2019-01-01 International Business Machines Corporation Laser annealing of qubits with structured illumination
US11895931B2 (en) 2017-11-28 2024-02-06 International Business Machines Corporation Frequency tuning of multi-qubit systems
EP3614194A1 (de) * 2018-08-24 2020-02-26 ASML Netherlands B.V. Bestimmung einer pupillenanpassung
TWI836287B (zh) * 2021-11-04 2024-03-21 邱俊榮 曝光裝置與曝光方法

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Also Published As

Publication number Publication date
EP2388650B1 (de) 2013-11-20
WO2009080231A1 (en) 2009-07-02
EP2238513A1 (de) 2010-10-13
EP2388650A1 (de) 2011-11-23
JP2011507292A (ja) 2011-03-03
EP2388649A1 (de) 2011-11-23
US9977333B2 (en) 2018-05-22
EP2388649B1 (de) 2013-06-19
US20100265482A1 (en) 2010-10-21
US20160187789A1 (en) 2016-06-30
US20130250264A1 (en) 2013-09-26
US20180335702A1 (en) 2018-11-22
US20170351183A1 (en) 2017-12-07
EP2238513B1 (de) 2011-11-02
US10191382B2 (en) 2019-01-29
US9599904B2 (en) 2017-03-21
JP5554245B2 (ja) 2014-07-23
US9310694B2 (en) 2016-04-12
US8467031B2 (en) 2013-06-18

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