TWI421976B - A substrate processing apparatus and a substrate processing method - Google Patents

A substrate processing apparatus and a substrate processing method Download PDF

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TWI421976B
TWI421976B TW98130245A TW98130245A TWI421976B TW I421976 B TWI421976 B TW I421976B TW 98130245 A TW98130245 A TW 98130245A TW 98130245 A TW98130245 A TW 98130245A TW I421976 B TWI421976 B TW I421976B
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substrate
mask
bracket
supporting portion
semiconductor wafer
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TW201021155A (en
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Kimio Kogure
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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Description

基板處理裝置及基板處理方法
本發明係關於特別適用於厚度較薄之基板的處理之基板處理裝置及基板處理方法。
在真空中對基板進行如薄膜形成、表面改質、乾式蝕刻等之處理的基板處理中，係將基板在載於托架上之狀態下進行處理。例如專利文獻1中揭示，在落入有底托架之凹部的基板之上進而載置環狀夾盤，於此狀態下連托架一同靜電吸附於靜電吸盤，而對基板進行處理。
專利文獻1：日本特開2003-59998號公報
作為處理對象之基板，特別是厚度非常薄之半導體晶圓之情形下，藉由晶圓外緣部與托架之接觸等，晶圓外緣部易於產生破損。此處之問題為，若晶圓之碎片載於搬送手或靜電吸盤上，則碎片將會夾於其等與晶圓間，在晶圓之元件形成面上引起損壞及引起晶圓之破碎，靜電吸盤表面若為聚醯亞胺等軟材時碎片會咬入到達靜電吸盤用之電極而造成短路，此等為所憂慮之問題。
本發明係鑑於前述問題而完成，係提供一種可避免起因於基板之碎片的問題之基板處理裝置及基板處理方法。
根據本發明之一樣態，提供一種基板處理裝置，其特徵 為包含：環狀托架，其具有支持基板之外緣部之基板支持部、比前述基板支持部更位於外周側且向上方突出而設置之遮罩支持部、及在前述基板支持部與前述遮罩支持部間所設置之凹部；環狀遮罩，其係與前述托架之前述遮罩支持部重疊，而覆蓋前述托架之前述凹部及前述基板支持部；及旋轉台，係具有靜電吸附面、及設置於比前述靜電吸附面更為外周側且更下方之托架載置部；且在前述基板吸附於前述靜電吸附面且前述托架載置於前述托架載置部之狀態下，前述基板之前述外緣部自前述靜電吸附面向前述托架載置部側突出，前述基板支持部相對於前述基板之前述外緣部於下方分離，前述遮罩相對於前述基板之前述外緣部於上方分離。
另，根據本發明之另外之一樣態，提供一種基板處理方法，其特徵為：在使具有基板支持部、及比前述基板支持部更位於外周側且向上方突出而設置之遮罩支持部之環狀托架中之前述基板支持部支持基板之外緣部，且以與前述遮罩支持部重疊之環狀遮罩覆蓋前述基板之前述外緣部之狀態下，使前述托架及前述遮罩朝向具有靜電吸附面、及設置於比前述靜電吸附面更為外周側且更下方之托架載置部之旋轉台移動；在前述基板吸附於前述靜電吸附面，前述托架載置於前述托架載置部，前述基板支持部相對於自前述靜電吸附面向前述托架載置部側突出之前述外緣部於下方分離，且前述遮罩相對於前述外緣部於上方分離之狀態下，使前述旋轉台旋轉並處理前述基板；前述基板處理 後，在保持前述托架載置於前述托架載置部且前述遮罩與前述遮罩支持部重疊之狀態下，解除對於前述基板之靜電吸附力。
根據本發明，可提供一種可避免起因於基板之碎片的問題之基板處理裝置及基板處理方法。
以下參照附圖就本發明之實施形態進行說明。本發明之實施形態中，例如以半導體晶圓作為處理對象之基板，說明對該半導體晶圓進行濺鍍成膜處理之具體例。
本實施形態中作為處理對象之半導體晶圓非常薄，例如厚度為10~100μm、進而具體為50μm左右。本實施形態中，將如此薄之半導體晶圓以保持構件保持之狀態下搬進或搬出處理室。
圖1係顯示該保持構件10之模式剖面圖。另，圖1中亦合併顯示保持於保持構件10之狀態之半導體晶圓W。
保持構件10由環狀托架11與相同環狀之遮罩21所構成。此等托架11及遮罩21與半導體晶圓W一同搬入處理室內，於濺鍍成膜處理時被曝於電漿、高溫、各種氣體中，而且具有可耐此等條件的充分的耐熱性及機械強度，不會變形或破損等，可穩定地保持半導體晶圓W。例如作為托架11與遮罩21之材料，可舉出鈦、鈦合金、氧化鋁等。
托架11形成圓形環狀，其外徑比半導體晶圓W之直徑大，內徑比半導體晶圓W之直徑小。托架11中，於保持半 導體晶圓W之上面側設置階差，其相反側之下面成平坦面。
在托架11之上面側設置晶圓支持部(基板支持部)13與遮罩支持部12。遮罩支持部12設置在托架11中比半導體晶圓W之直徑大的外周側，晶圓支持部13則設置在該遮罩支持部12之內周側。
晶圓支持部13之上面係配合半導體晶圓W之圓形狀而形成圓形環狀，遮罩支持部12之上面也形成圓形環狀。另，遮罩支持部12之徑向寬度尺寸比晶圓支持部13之徑向寬度尺寸大，因此遮罩支持部12之上面的面積比晶圓支持部13之上面的面積大。
遮罩支持部12比晶圓支持部13更向上方地突出。並且，此處的「上方」表示以托架11之平坦的背面側作為下方時之上方。因此，遮罩支持部12之上面與晶圓支持部13之上面之間具有高度程度的差異(階差)，遮罩支持部12之上面比晶圓支持部13之上面更位於上方。
托架11中，在晶圓支持部13與遮罩支持部12之間設有凹部14。凹部14以沿半導體晶圓W之外緣(邊緣)之曲率之方式，經過環狀托架11之全體周方向形成連續的槽狀。凹部14之底比遮罩支持部12之上面及晶圓支持部13之上面更位於下方。
半導體晶圓W，藉由其外緣部(周緣部)載置於托架11之晶圓支持部13之上而被托架11支持。半導體晶圓W之直徑例如為200mm，其中與晶圓支持部13接觸並被支持的為外 周側之2.5mm左右的部份。
遮罩支持部12之內徑只比半導體晶圓W之直徑稍大，半導體晶圓W收容於該遮罩支持部12之內周面15之內側，藉由遮罩支持部12之內周面15限制半導體晶圓W之徑向的位置偏移。
前述與托架11一同構成保持構件10之遮罩21形成圓形環狀，其外徑比托架11之外徑大，內徑比托架11之內徑小。即，遮罩21之徑向寬度尺寸比托架11之徑向寬度尺寸大，該遮罩21之下面之一部分載置於托架11之遮罩支持部12上，以與托架11重疊之狀態，遮罩21遮罩整個托架11。遮罩21之下面及上面皆形成平坦的面，下面比托架11更向徑內方側延伸。
另，在遮罩21之最外周部設置向下方突出之圓形環狀肋22，藉由於此肋22之內周側收容托架11，而限制托架11與遮罩21之徑向的相互之位置偏移。另，藉由形成此圓形環狀之肋22而抑制遮罩21之變形。托架11中藉由形成圓形環狀之凹部14而抑制托架11之變形。再者，凹部14之主要功能如後所述，係在於在半導體晶圓W之外緣部產生破損之情形保留其碎片，使其不繞至半導體晶圓W之背側。
本實施形態中，於半導體晶圓W之形成有電晶體等元件要部之第1主面之相反側之第2主面上，以濺鍍法成膜作為電極而發揮功能的金屬(不限於純金屬，也包含合金)膜。半導體晶圓W，以其被成膜面之第2主面為上側之狀態，其外緣部被載置支持於托架11之晶圓支持部13。半導體晶 圓W以其自重放置於托架11之晶圓支持部13上。
遮罩21重疊於托架11之遮罩支持部12之上。遮罩21以其自重載置於托架11之遮罩支持部12之上。在遮罩21與遮罩支持部12重疊之狀態下，遮罩21覆蓋包含晶圓支持部13、凹部14及遮罩支持部12之整個托架11，於托架11上支持半導體晶圓W之情形，覆蓋該半導體晶圓W之外緣部。此時，由於晶圓支持部13之上面位於比遮罩支持部12上面更低的位置上，因此半導體晶圓W之被成膜面與遮罩21之下面之間形成微小間隙，遮罩21不與半導體晶圓W接觸。
半導體晶圓W如圖1所示，以藉由托架11及遮罩21保持之狀態被搬入處理室內，處理後從處理室內搬出。根據本實施形態，藉由將較薄之半導體晶圓W載於具有充分強度的托架11上，連該托架11一同搬送，處理室內相對台升降半導體晶圓W之升降機構等不與半導體晶圓W接觸，可防止半導體晶圓W受損，並緩和波及至半導體晶圓W的衝擊，防止破損。
再者，本實施形態中，藉由將遮罩21重疊於托架11之上，以遮罩21覆蓋半導體晶圓W之外緣部，因此可防止在搬送中半導體晶圓W從托架11中飛落而脫落。
本實施形態之處理裝置，係相對於基板可對應不同種類之複數之積層膜的成膜、或特定種類之成膜，而具有複數之處理室之多腔室型處理裝置。於各處理室內對基板進行例如濺鍍成膜處理，本實施形態之多腔室型處理裝置係在處理室以外也備有基板裝卸室，在此基板裝卸室內設有如 圖3所示之搬送機器人50。
此搬送機器人50係藉由驅動機構51，臂52沿水平方向動作之水平多關節機器人。處理前之半導體晶圓W，係在基板裝卸室內利用搬送機器人50從未圖示之卡匣取出至安裝在臂52之前端之指狀件(手)53上。相反地，處理後之半導體晶圓W從指狀件53返回到卡匣內。半導體晶圓W只以自重放置於指狀件53上，不做吸附等保持。半導體晶圓W與指狀件53接觸之面積上只以自重所產生的摩擦力為保持力。
由於薄半導體晶圓W之重量較輕，如前述搬送機器人50之利用摩擦阻力之搬送方法不能期待大摩擦阻力，要加快搬送速度有其困難。與此相對，托架11及遮罩21與半導體晶圓W相比有充分大的重量，藉由連此等托架11及遮罩21一起將半導體晶圓W載置於指狀件53上而進行搬送，可提高摩擦阻力加快搬送速度，謀求整體處理時間之縮短。
圖2係模式地顯示本發明之實施形態之處理裝置之某一個處理室。
處理室30由腔室壁31包圍。在處理室30內連接未圖示之氣體導入系統及排氣系統，藉由此等之控制，可使處理室30內成為所期望氣體之所期望之減壓下。
處理室30內，靶材34與旋轉台32對向而設，靶材34係保持於支持板等，設於處理室30內之上部，旋轉台32設於處理室30內之底部。
旋轉台32具有靜電吸盤機構，在內部設有電極33，其電 極33與台表面(靜電吸附面32a)之間成為介電體。若對內部電極33從未圖示之電源施加電壓，則靜電吸附面32a與其上所載置之半導體晶圓W之間產生靜電力，半導體晶圓W吸附固定於靜電吸附面32a上。
旋轉台32中，於比靜電吸附面32a更位於外周側且比靜電吸附面32a更向下方下降之位置上，設有托架載置部32b。托架載置部32b以包圍靜電吸附面32a周圍之方式環狀設置。
本實施形態之處理裝置，如前所述係具有複數之處理室之多腔室型處理裝置，但為謀求裝置全體小型化而必須抑制各處理室之數量，例如使用2個直徑較小之靶材34進行處理室之共用。因此，為使半導體晶圓W之被成膜面全面均一地成膜，而藉由旋轉台32邊使半導體晶圓W旋轉邊進行濺鍍成膜。旋轉台32係繞圖2中以1點鏈線所示之中心軸，連內部電極33一同可旋轉地設置。
半導體晶圓W係以圖1所示之狀態，與保持構件10(托架11及遮罩21)一起，通過腔室壁31上所形成之搬出入口36向處理室30內搬入。此搬入後，搬出入口36藉由未圖示之閘門等氣密地封閉。之後，處理室30內成為適於濺鍍成膜處理之所期望的壓力之所期望的氣體環境。
通過搬出入口36之保持構件10之對於處理室30之搬出入，係使用搬送機器人等進行。另，處理室30內，設有如圖4所示之例如銷狀之升降機構37。升降機構37支持托架11之下面。升降機構37可升降地設置於旋轉台32之托架載 置部32b之下方所形成的引導孔38內及比引導孔38更上方之空間。再者，升降機構37不限於銷狀，也可以為台狀。
保持半導體晶圓W之保持構件10，如圖2所示，搬入到旋轉台32之上方位置，之後，藉由使支持保持構件10之下面之升降機構37下降，保持構件10向旋轉台32下降。
靜電吸附面32a例如形成圓形狀，托架11之內徑比靜電吸附面32a之直徑大，可使靜電吸附面32a進入托架11之內周面之內側。
托架11下降之同時，被托架11之晶圓支持部13所支持之半導體晶圓亦下降，若托架11比靜電吸附面32a更下方地下降，則半導體晶圓W中從托架11露出之下面載置於靜電吸附面32a上，並被吸附固定。半導體晶圓W之支持於托架11之晶圓支持部13之外緣部，如圖4所示，向比靜電吸附面32a更靠近外周側之托架載置部32b側突出。
托架11載置於旋轉台32之托架載置部32b上。如圖4所示，在托架11載置於托架載置部32b上之狀態下，晶圓支持部13之上面位於比靜電吸附面32a更下方之位置，對半導體晶圓W之外緣部呈不接觸之離開狀態。
托架11下降之同時，被托架11之遮罩支持部12支持之遮罩21亦下降。由於半導體晶圓W呈放置於托架11之晶圓支持部13之狀態，遮罩21之內周側之部份21a覆蓋半導體晶圓W之外緣部，藉由預先適當地設定托架11中晶圓支持部13與遮罩支持部12之階差，即使托架11從半導體晶圓W之支持中脫離，變為載置於托架載置部32b之狀態，也可維 持遮罩21之內周側部份21a不與半導體晶圓W之外緣部接觸之離開狀態。
保持如此圖4所示之狀態下，使旋轉台32邊旋轉邊對半導體晶圓W進行濺鍍成膜處理。即，由圖2所示之電源裝置35對靶材34施加電壓，藉此靶材34與旋轉台32之間產生放電而生成電漿，據此生成之離子藉由處理空間內之電場向靶材34加速與靶材34碰撞，靶材材料之粒子被從靶材34中擊出，附著堆積於半導體晶圓W之被成膜面。
根據本實施形態，整個利用保持構件10保持半導體晶圓W之搬送中，以及圖4所示之處理中，由於於半導體晶圓W之外緣部之下方存在凹部14，故即使半導體晶圓W之薄外緣部與托架11干擾而產生細小碎片，也可使該碎片落下於凹部14而停留。即碎片不會散布。由此，可避免半導體晶圓W之碎片迂迴至半導體晶圓W之下面側，與搬送機器人50之指狀件53之間或與靜電吸附面32a之間夾入碎片。從而可防止半導體晶圓W之元件形成面之損壞、或碎片陷入旋轉台32之內部電極33所造成之短路等問題。
另，在處理中由於遮罩21呈覆蓋整個包含凹部14及晶圓支持部13之托架11之狀態，因此可防止對托架11之膜附著，謀求維護之減輕。
若濺鍍成膜處理完成，則於維持圖4所示之狀態下，首先，停止向圖2所示之內部電極33施加電壓，解除對半導體晶圓W之靜電吸附力。此時，由於遮罩21之內周側部份21a覆蓋半導體晶圓W之外緣部，因此可防止半導體晶圓W 於旋轉台32上之彈跳，或從旋轉台32落下。
解除半導體晶圓W之吸附固定後，從圖4之狀態藉由升降機構37之上升使托架11上升，於托架11之晶圓支持部13上放置半導體晶圓W之外緣部，從靜電吸附面32a抬起半導體晶圓W。然後，打開圖2所示之搬出入口36，藉由未圖示之搬送機構將半導體晶圓W與保持構件10一起向處理室30外搬出。
使旋轉台32一面旋轉之處理中，半導體晶圓W固定於靜電吸附面32a上，而托架11只放置於旋轉台32之托架載置部32b上，並且遮罩21亦只放置於托架11之遮罩支持部12上。因此在旋轉台32之旋轉中，托架11及遮罩21可以慣性力對半導體晶圓W作相對的偏移般之移動。若使托架11相對旋轉台32固定，或使托架11與遮罩21相互固定，則可消除如此偏移之移動，但因伴隨旋轉之機構而往往成為複雜構成。
因此，本實施形態中，即使容許藉由旋轉台32之旋轉，托架11及遮罩21偏移般之移動，如圖4所示，托架11及遮罩21以放置於旋轉台32之狀態，由於該等任意之部份亦不接觸半導體晶圓W，因此托架11及遮罩21偏移移動之影響不會傳遞給半導體晶圓W。若半導體晶圓W較薄，即使稍與托架11或遮罩21接觸也易破損，但本實施形態中，如前所述，由於使托架11及遮罩21對半導體晶圓W離開，而可防止半導體晶圓W之破損。此外，假設即使托架11或遮罩21與半導體晶圓W之外緣部接觸，產生其外緣部如破損般 之情況，如前所述，由於可使碎片落下於托架11之凹部14而停留，因此可避免起因於該碎片之問題。
再者，也可於托架載置部32b上設置限制伴隨旋轉台32之旋轉之托架11之滑動移動之限制機構。例如，圖5(a)顯示設置可收容托架11之下面之槽41之例。此時，藉由槽41之側壁可限制托架11之徑向之移動。另，圖5(b)顯示於托架載置部表面設置細小凹凸42之例。或者也可將托架載置部表面作粗面化處理。此時，提高托架載置部表面與其上所載置之托架下面之摩擦力，托架11可不易滑動移動。
再者，與專利文獻1中對靜電吸附面吸附托架之背面之構成相比，本實施形態中，半導體晶圓W對靜電吸附面32a直接吸附。從而根據本實施形態，例如藉由內藏於台之加熱器等加熱半導體晶圓之情形，由於托架不介於台與半導體晶圓之間，因此不會阻礙由台向晶圓之熱傳達，可以提高加熱或冷卻之控制性，使半導體晶圓成為所期望之溫度。另，晶圓與吸附面之密接程度不會在晶圓全面有偏差，可均一亦可謀求晶圓面內之溫度分佈均一化。如上所述，能提高晶圓處理品質。另，若靜電吸附托架，則托架受限於絕緣物，但本實施形態中托架之材質不受限於絕緣物，材料選擇不受制約。
以上，參照具體例之同時關於本發明之實施形態進行說明。但本發明不受限於該等者，基於本發明之技術性構想可有各種變形。
作為處理對象之基板，不限於半導體晶圓，例如也可以 為微影成像之圖案轉寫用之遮罩、碟狀記錄媒體等。另，對基板進行之處理亦不限於濺鍍成膜，也可以為濺射蝕刻、CDE(chemical dry etching)、CVD(chemical vapor deposition)、表面改質等之處理。
10‧‧‧保持構件
11‧‧‧托架
12‧‧‧遮罩支持部
13‧‧‧晶圓支持部(基板支持部)
14‧‧‧凹部
21‧‧‧遮罩
30‧‧‧處理室
32‧‧‧旋轉台
32a‧‧‧靜電吸附面
32b‧‧‧遮罩載置部
34‧‧‧靶材
圖1係本發明之實施形態之基板保持構件之模式剖面圖；圖2係本發明之實施形態之基板處理裝置之模式圖；圖3(a)、(b)係搬送機器人之模式立體圖；圖4係顯示本發明之實施形態之基板處理方法中，基板靜電吸附於旋轉台之靜電吸附面，並且托架載置於旋轉台之托架載置部之狀態之要部放大模式圖；及圖5(a)、(b)係顯示圖2、4所示之旋轉台中之托架載置部之其他具體例之模式圖。
11‧‧‧托架
12‧‧‧遮罩支持部
13‧‧‧晶圓支持部(基板支持部)
14‧‧‧凹部
21‧‧‧遮罩
21a‧‧‧遮罩之內周側部份
22‧‧‧肋
32‧‧‧旋轉台
32a‧‧‧靜電吸附面
32b‧‧‧托架載置部
37‧‧‧升降機構
38‧‧‧引導孔L
W‧‧‧半導體晶圓

Claims (10)

  1. 一種基板處理裝置，其特徵為包含：環狀托架，其具有支持基板之外緣部之基板支持部、比前述基板支持部更位於外周側且向上方突出而設置之遮罩支持部、及在前述基板支持部與前述遮罩支持部間所設置之凹部；環狀遮罩，其係與前述托架之前述遮罩支持部重疊，而覆蓋前述托架之前述凹部及前述基板支持部；及旋轉台，係具有靜電吸附面、及設置於比前述靜電吸附面更為外周側且更下方之托架載置部；且在前述基板吸附於前述靜電吸附面且前述托架載置於前述托架載置部之狀態下，前述基板之前述外緣部自前述靜電吸附面向前述托架載置部側突出，前述基板支持部相對於前述基板之前述外緣部於下方分離，前述遮罩相對於前述基板之前述外緣部於上方分離。
  2. 如請求項1之基板處理裝置，其中前述凹部連續地設於前述環狀托架之整個周方向。
  3. 如請求項1之基板處理裝置，其中於前述托架載置部設有限制伴隨前述旋轉台之旋轉之前述托架之滑動移動之限制機構。
  4. 如請求項1之基板處理裝置，其中前述旋轉台係設置於由具有搬出入口之腔室壁所包圍之處理室中；前述基板係於被前述托架所支持、前述遮罩與前述托架重疊之狀態下，通過前述搬出入口被搬入前述處理室 內或自前述處理室搬出。
  5. 如請求項1之基板處理裝置，其中進一步包含使支持前述基板之前述托架及前述遮罩於前述旋轉台上升降之升降機構。
  6. 如請求項1之基板處理裝置，其中於真空下之前述旋轉台上處理前述基板。
  7. 一種基板處理方法，其特徵為：在使具有基板支持部、及比前述基板支持部更位於外周側且向上方突出而設置之遮罩支持部之環狀托架中之前述基板支持部支持基板之外緣部，且以與前述遮罩支持部重疊之環狀遮罩覆蓋前述基板之前述外緣部之狀態下，使前述托架及前述遮罩朝向具有靜電吸附面、及設置於比前述靜電吸附面更為外周側且更下方之托架載置部之旋轉台移動；在前述基板吸附於前述靜電吸附面，前述托架載置於前述托架載置部，前述基板支持部相對於自前述靜電吸附面向前述托架載置部側突出之前述外緣部於下方分離，且前述遮罩相對於前述外緣部於上方分離之狀態下，使前述旋轉台旋轉並處理前述基板；前述基板處理後，在保持前述托架載置於前述托架載置部且前述遮罩與前述遮罩支持部重疊之狀態下，解除對於前述基板之靜電吸附力。
  8. 如請求項7之基板處理方法，其中將前述基板在支持於前述托架、前述遮罩與前述托架重疊之狀態下，搬入前 述處理室內或自前述處理室搬出。
  9. 如請求項7之基板處理方法，其中藉由支持前述托架之下面之升降機構，使支持前述基板之前述托架及前述遮罩朝向前述旋轉台移動。
  10. 如請求項7之基板處理方法，其中於真空下之前述旋轉台上處理前述基板。
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