TWI402893B - 曝光方法 - Google Patents
曝光方法 Download PDFInfo
- Publication number
- TWI402893B TWI402893B TW097127865A TW97127865A TWI402893B TW I402893 B TWI402893 B TW I402893B TW 097127865 A TW097127865 A TW 097127865A TW 97127865 A TW97127865 A TW 97127865A TW I402893 B TWI402893 B TW I402893B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- nozzle member
- liquid
- exposure
- exposure apparatus
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000007788 liquid Substances 0.000 claims description 338
- 239000000758 substrate Substances 0.000 claims description 236
- 230000003287 optical effect Effects 0.000 claims description 178
- 230000007246 mechanism Effects 0.000 claims description 89
- 238000011084 recovery Methods 0.000 claims description 66
- 238000007654 immersion Methods 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 230000000704 physical effect Effects 0.000 claims description 6
- 238000005259 measurement Methods 0.000 description 35
- 238000005286 illumination Methods 0.000 description 26
- 230000001133 acceleration Effects 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000013016 damping Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000005871 repellent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000010627 cedar oil Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010436 fluorite Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- 229910000737 Duralumin Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004089348 | 2004-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200921762A TW200921762A (en) | 2009-05-16 |
| TWI402893B true TWI402893B (zh) | 2013-07-21 |
Family
ID=35056454
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100139028A TWI486719B (zh) | 2004-03-25 | 2005-03-23 | 曝光方法 |
| TW101149735A TWI518744B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
| TW094108912A TWI358746B (en) | 2004-03-25 | 2005-03-23 | Exposure apparatus and device manufacturing method |
| TW104127306A TWI606485B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
| TW106109736A TWI628697B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、及元件製造方法 |
| TW097127865A TWI402893B (zh) | 2004-03-25 | 2005-03-23 | 曝光方法 |
| TW106145839A TW201816844A (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100139028A TWI486719B (zh) | 2004-03-25 | 2005-03-23 | 曝光方法 |
| TW101149735A TWI518744B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
| TW094108912A TWI358746B (en) | 2004-03-25 | 2005-03-23 | Exposure apparatus and device manufacturing method |
| TW104127306A TWI606485B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
| TW106109736A TWI628697B (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、及元件製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106145839A TW201816844A (zh) | 2004-03-25 | 2005-03-23 | 曝光裝置、曝光方法、及元件製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (7) | US8111373B2 (enExample) |
| JP (13) | JP4525676B2 (enExample) |
| KR (8) | KR101707294B1 (enExample) |
| TW (7) | TWI486719B (enExample) |
| WO (1) | WO2005093791A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| TWI486719B (zh) * | 2004-03-25 | 2015-06-01 | 尼康股份有限公司 | 曝光方法 |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006009573A1 (en) | 2004-06-17 | 2006-01-26 | Nikon Corporation | Fluid pressure compensation for immersion lithography lens |
| JP4565272B2 (ja) | 2004-07-01 | 2010-10-20 | 株式会社ニコン | 液浸リソグラフィのための動的流体制御システム |
| EP1796146B1 (en) | 2004-09-17 | 2013-01-16 | Nikon Corporation | Exposure apparatus, exposure method, and method for manufacturing device |
| US7180571B2 (en) | 2004-12-08 | 2007-02-20 | Asml Netherlands B.V. | Lithographic projection apparatus and actuator |
| KR20070122445A (ko) * | 2005-04-28 | 2007-12-31 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
| JP2007012954A (ja) * | 2005-07-01 | 2007-01-18 | Canon Inc | 露光装置 |
| US7411658B2 (en) * | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
| US7864292B2 (en) * | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4514225B2 (ja) * | 2005-11-16 | 2010-07-28 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| KR101340138B1 (ko) * | 2005-12-08 | 2013-12-10 | 가부시키가이샤 니콘 | 기판 보지 장치, 노광 장치, 노광 방법 및 디바이스 제조방법 |
| US7701551B2 (en) | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006023876A1 (de) * | 2006-05-19 | 2007-11-22 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung |
| US8027023B2 (en) | 2006-05-19 | 2011-09-27 | Carl Zeiss Smt Gmbh | Optical imaging device and method for reducing dynamic fluctuations in pressure difference |
| US7656502B2 (en) * | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080198348A1 (en) * | 2007-02-20 | 2008-08-21 | Nikon Corporation | Apparatus and methods for minimizing force variation from immersion liquid in lithography systems |
| SG10201502625RA (en) * | 2007-07-18 | 2015-05-28 | Nikon Corp | Measuring Method, Stage Apparatus, And Exposure Apparatus |
| NL1035908A1 (nl) | 2007-09-25 | 2009-03-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| KR101408783B1 (ko) | 2007-12-07 | 2014-06-17 | 삼성전자주식회사 | 반도체 소자의 제조장치 및 이를 이용한 반도체 소자의제조방법 |
| US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
| NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US9494870B2 (en) * | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP6466333B2 (ja) * | 2012-10-15 | 2019-02-06 | エーエスエムエル ネザーランズ ビー．ブイ． | 作動機構、光学装置、リソグラフィ装置及びデバイス製造方法 |
| JP6119242B2 (ja) * | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| WO2015147039A1 (ja) * | 2014-03-26 | 2015-10-01 | 株式会社ニコン | 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法 |
| US10802260B2 (en) | 2014-05-29 | 2020-10-13 | Rarecyte, Inc. | Automated substrate loading |
| WO2015183691A1 (en) * | 2014-05-29 | 2015-12-03 | Rarecyte, Inc. | Apparatus for holding a substrate within a secondary device |
| US11300769B2 (en) | 2014-05-29 | 2022-04-12 | Rarecyte, Inc. | Automated substrate loading |
| US11422352B2 (en) | 2014-05-29 | 2022-08-23 | Rarecyte, Inc. | Automated substrate loading |
| US10890748B2 (en) | 2014-05-29 | 2021-01-12 | Rarecyte, Inc. | Automated substrate loading |
| KR102644544B1 (ko) | 2016-09-21 | 2024-03-11 | 넥스트큐어 인코포레이티드 | Siglec-15를 위한 항체 및 이의 사용 방법 |
| JP6506785B2 (ja) * | 2017-02-02 | 2019-04-24 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | リソグラフィ用テンプレートの製造方法、プログラム及び基板処理装置 |
| CN110291157B (zh) | 2017-02-08 | 2022-05-13 | 昭和电工材料株式会社 | 电荷传输性材料及其用途 |
| AU2020232965B2 (en) | 2019-03-01 | 2025-05-08 | Rarecyte, Inc. | Holding a substrate within a secondary device |
| CN112684665B (zh) * | 2020-12-25 | 2024-06-25 | 浙江启尔机电技术有限公司 | 一种浸液供给回收装置 |
| KR102584513B1 (ko) | 2020-12-31 | 2023-10-06 | 세메스 주식회사 | 온도 변화가 수반되는 분위기에 제공되는 기판 지지 부재의 수평 측정용 기판형 센서, 이를 이용한 수평 측정 방법 및 비일시적 컴퓨터 판독가능 매체 |
| CN114690577B (zh) * | 2020-12-31 | 2024-10-25 | 上海微电子装备（集团）股份有限公司 | 一种管路柔性适应装置及浸没式光刻机 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW350980B (en) * | 1996-08-20 | 1999-01-21 | Tokyo Electron Ltd | Display processing method |
Family Cites Families (222)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| US4441808A (en) | 1982-11-15 | 1984-04-10 | Tre Semiconductor Equipment Corp. | Focusing device for photo-exposure system |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| US4837443A (en) | 1987-10-15 | 1989-06-06 | The Perkin-Elmer Corporation | Guard ring for a differentially pumped seal apparatus |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるｌｓｉ製造縮小投影露光装置の光学系 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
| JP3308063B2 (ja) * | 1993-09-21 | 2002-07-29 | 株式会社ニコン | 投影露光方法及び装置 |
| JP3212199B2 (ja) | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JPH08136475A (ja) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | 板状材の表面観察装置 |
| JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US5707535A (en) | 1996-01-11 | 1998-01-13 | Harris; Ronald B. | Vacuum loadable divided phase separator for liquid/solid separation |
| JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
| JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
| WO1998009278A1 (en) | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
| JP3728613B2 (ja) | 1996-12-06 | 2005-12-21 | 株式会社ニコン | 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 |
| DE69735016T2 (de) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
| EP0900412B1 (en) | 1997-03-10 | 2005-04-06 | ASML Netherlands B.V. | Lithographic apparatus comprising a positioning device having two object holders |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| IL132432A0 (en) * | 1997-04-18 | 2001-03-19 | Nikon Corp | An exposure apparatus exposure method using the same and method of manufacture of circuit device |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| US20010003028A1 (en) | 1997-09-19 | 2001-06-07 | Nikon Corporation | Scanning Exposure Method |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| JPH11260791A (ja) | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | 半導体ウエハの乾燥方法および乾燥装置 |
| AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| US5997963A (en) | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000076707A (ja) | 1998-08-31 | 2000-03-14 | Sony Corp | 光学記録媒体作製用原盤記録装置 |
| EP1143492A4 (en) | 1998-09-03 | 2004-06-02 | Nikon Corp | EXPOSURE APPARATUS AND METHOD, DEVICE AND METHOD FOR PRODUCING SAID APPARATUS |
| EP1052552A3 (en) | 1999-04-19 | 2003-03-12 | ASML Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatus |
| JP3653198B2 (ja) | 1999-07-16 | 2005-05-25 | アルプス電気株式会社 | 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置 |
| JP2001118773A (ja) | 1999-10-18 | 2001-04-27 | Nikon Corp | ステージ装置及び露光装置 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| TWI264617B (en) * | 1999-12-21 | 2006-10-21 | Asml Netherlands Bv | Balanced positioning system for use in lithographic apparatus |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| TW579664B (en) | 2000-01-11 | 2004-03-11 | Matsushita Electric Industrial Co Ltd | Apparatus and method for manufacturing printed circuit board |
| JP3630054B2 (ja) | 2000-01-11 | 2005-03-16 | 松下電器産業株式会社 | プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法 |
| US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
| US7000622B2 (en) | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
| TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
| JP2002122999A (ja) * | 2000-10-16 | 2002-04-26 | Nikon Corp | 露光方法、露光装置及びマスク |
| JP2002134384A (ja) | 2000-10-20 | 2002-05-10 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| US20020080339A1 (en) * | 2000-12-25 | 2002-06-27 | Nikon Corporation | Stage apparatus, vibration control method and exposure apparatus |
| US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US7032658B2 (en) | 2002-01-31 | 2006-04-25 | Smart Drilling And Completion, Inc. | High power umbilicals for electric flowline immersion heating of produced hydrocarbons |
| JP2003124180A (ja) | 2001-10-16 | 2003-04-25 | Ebara Corp | 基板処理装置 |
| US7482118B2 (en) * | 2001-11-15 | 2009-01-27 | Third Wave Technologies, Inc. | Endonuclease-substrate complexes |
| US6811613B2 (en) * | 2001-11-26 | 2004-11-02 | Tokyo Electron Limited | Coating film forming apparatus |
| US6764386B2 (en) | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
| US6907890B2 (en) | 2002-02-06 | 2005-06-21 | Akrion Llc | Capillary drying of substrates |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US7520285B2 (en) | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
| US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
| US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US7240679B2 (en) | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100585476B1 (ko) * | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| AU2003289239A1 (en) * | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure system and device producing method |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| CN100370533C (zh) | 2002-12-13 | 2008-02-20 | 皇家飞利浦电子股份有限公司 | 用于照射层的方法和用于将辐射导向层的装置 |
| US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| KR100971441B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
| USRE46433E1 (en) | 2002-12-19 | 2017-06-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
| CN104678715B (zh) * | 2003-02-26 | 2017-05-17 | 株式会社尼康 | 曝光方法以及器件制造方法 |
| JP4352930B2 (ja) * | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| JP4353179B2 (ja) * | 2003-03-25 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
| KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
| KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| SG141425A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
| JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
| KR101697896B1 (ko) | 2003-04-11 | 2017-01-18 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
| JP4837556B2 (ja) | 2003-04-11 | 2011-12-14 | 株式会社ニコン | 液浸リソグラフィにおける光学素子の洗浄方法 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| SG194246A1 (en) | 2003-04-17 | 2013-11-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| EP1477856A1 (en) | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI612557B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
| JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
| DE10324477A1 (de) * | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
| EP1486828B1 (en) * | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP4437474B2 (ja) * | 2003-06-19 | 2010-03-24 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1494079B1 (en) * | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographic Apparatus |
| US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| KR101209539B1 (ko) | 2003-07-09 | 2012-12-07 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR101308826B1 (ko) | 2003-09-03 | 2013-09-13 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| EP1519230A1 (en) * | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4515209B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| JP4513299B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
| US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
| KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| JP2005183744A (ja) * | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| KR101150037B1 (ko) | 2004-01-14 | 2012-07-02 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
| KR101099847B1 (ko) | 2004-01-16 | 2011-12-27 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
| WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| CN1938646B (zh) | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
| US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| JP2007520893A (ja) | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| CN1922528A (zh) | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| TWI486719B (zh) * | 2004-03-25 | 2015-06-01 | 尼康股份有限公司 | 曝光方法 |
| US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| JP4510494B2 (ja) * | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
| US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006009573A1 (en) | 2004-06-17 | 2006-01-26 | Nikon Corporation | Fluid pressure compensation for immersion lithography lens |
| US7057702B2 (en) * | 2004-06-23 | 2006-06-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4565272B2 (ja) | 2004-07-01 | 2010-10-20 | 株式会社ニコン | 液浸リソグラフィのための動的流体制御システム |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7355674B2 (en) | 2004-09-28 | 2008-04-08 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
| US7161654B2 (en) | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7265813B2 (en) | 2004-12-28 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW350980B (en) * | 1996-08-20 | 1999-01-21 | Tokyo Electron Ltd | Display processing method |
Non-Patent Citations (1)
| Title |
|---|
| 本案先前技術 * |
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