TWI286367B - A semiconductor device - Google Patents
A semiconductor device Download PDFInfo
- Publication number
- TWI286367B TWI286367B TW094144873A TW94144873A TWI286367B TW I286367 B TWI286367 B TW I286367B TW 094144873 A TW094144873 A TW 094144873A TW 94144873 A TW94144873 A TW 94144873A TW I286367 B TWI286367 B TW I286367B
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- Taiwan
- Prior art keywords
- circuit
- film
- substrate
- semiconductor device
- voltage
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- DWDQAMUKGDBIGM-UHFFFAOYSA-N phosphanylidyneyttrium Chemical compound [Y]#P DWDQAMUKGDBIGM-UHFFFAOYSA-N 0.000 description 1
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- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
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- 150000003481 tantalum Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/3025—Wireless interface with the DUT
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electroluminescent Light Sources (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001079609 | 2001-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200625536A TW200625536A (en) | 2006-07-16 |
| TWI286367B true TWI286367B (en) | 2007-09-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094144873A TWI286367B (en) | 2001-03-19 | 2002-03-14 | A semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US7105365B2 (enExample) |
| JP (1) | JP4271404B2 (enExample) |
| KR (2) | KR100825911B1 (enExample) |
| CN (3) | CN1790671B (enExample) |
| MY (1) | MY134535A (enExample) |
| SG (2) | SG117406A1 (enExample) |
| TW (1) | TWI286367B (enExample) |
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| US7453705B2 (en) * | 2002-05-07 | 2008-11-18 | Alien Technology Corporation | Barrier, such as a hermetic barrier layer for O/PLED and other electronic devices on plastic |
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| SG130013A1 (en) * | 2002-07-25 | 2007-03-20 | Semiconductor Energy Lab | Method of fabricating light emitting device |
| TWI304706B (enExample) * | 2002-08-30 | 2008-12-21 | Au Optronics Corp | |
| KR100867726B1 (ko) * | 2002-11-21 | 2008-11-10 | 삼성전자주식회사 | 액정표시장치의 제조 방법 |
| JP4429593B2 (ja) * | 2002-11-22 | 2010-03-10 | パナソニック株式会社 | 半導体装置のレイアウト検証方法 |
| US7205986B2 (en) * | 2002-12-18 | 2007-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Image display device and testing method of the same |
| EP1437683B1 (en) * | 2002-12-27 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | IC card and booking account system using the IC card |
| US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
| JP4242663B2 (ja) * | 2003-02-19 | 2009-03-25 | ソフトバンクＢｂ株式会社 | 無線タグ |
| US7973313B2 (en) | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
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2002
- 2002-03-13 SG SG200201419A patent/SG117406A1/en unknown
- 2002-03-13 SG SG200505102-4A patent/SG142160A1/en unknown
- 2002-03-14 MY MYPI20020946A patent/MY134535A/en unknown
- 2002-03-14 TW TW094144873A patent/TWI286367B/zh not_active IP Right Cessation
- 2002-03-18 US US10/102,277 patent/US7105365B2/en not_active Expired - Lifetime
- 2002-03-19 CN CN2005101188447A patent/CN1790671B/zh not_active Expired - Fee Related
- 2002-03-19 JP JP2002077384A patent/JP4271404B2/ja not_active Expired - Fee Related
- 2002-03-19 CN CN2007103081725A patent/CN101241916B/zh not_active Expired - Fee Related
- 2002-03-19 KR KR1020020014672A patent/KR100825911B1/ko not_active Expired - Fee Related
- 2002-03-19 CN CNB021074747A patent/CN100372051C/zh not_active Expired - Fee Related
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- 2007-03-02 KR KR1020070020902A patent/KR100862044B1/ko not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US20140252971A1 (en) | 2014-09-11 |
| US8729548B2 (en) | 2014-05-20 |
| KR100825911B1 (ko) | 2008-04-28 |
| TW200625536A (en) | 2006-07-16 |
| CN101241916A (zh) | 2008-08-13 |
| CN1790671B (zh) | 2012-03-21 |
| JP2003031814A (ja) | 2003-01-31 |
| SG117406A1 (en) | 2005-12-29 |
| JP4271404B2 (ja) | 2009-06-03 |
| US20100157165A1 (en) | 2010-06-24 |
| US20060263952A1 (en) | 2006-11-23 |
| US9047796B2 (en) | 2015-06-02 |
| CN1375859A (zh) | 2002-10-23 |
| US20020132383A1 (en) | 2002-09-19 |
| US7105365B2 (en) | 2006-09-12 |
| KR20070032980A (ko) | 2007-03-23 |
| US7674635B2 (en) | 2010-03-09 |
| CN100372051C (zh) | 2008-02-27 |
| SG142160A1 (en) | 2008-05-28 |
| MY134535A (en) | 2007-12-31 |
| KR20020074415A (ko) | 2002-09-30 |
| KR100862044B1 (ko) | 2008-10-09 |
| CN101241916B (zh) | 2011-01-26 |
| CN1790671A (zh) | 2006-06-21 |
| US20150348855A1 (en) | 2015-12-03 |
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