TWI257688B - Method of manufacturing a semiconductor device - Google Patents

Description

1257688 A7 __B7 V. OBJECT DESCRIPTION OF THE INVENTION (!) BACKGROUND OF THE INVENTION 1. Field of the Invention (Please read the note on the back side and then fill out this page) The present invention relates to a method of fabricating a semiconductor device including a semiconductor element utilizing semiconductor characteristics (such as electricity) Crystals, particularly field effect transistors; typically methods for the detection of metal oxide semiconductor (MOS) transistors and thin film transistors (TFTs). More specifically, the present invention relates to a non-contact type detecting device and a detecting method using the same. The present invention also relates to a method of fabricating a semiconductor device including such a method of detecting a semiconductor device. 2. Description of Related Art In active matrix type liquid crystal displays and electroluminescence (EL) displays, TFTs are generally provided in each pixel. In the case of a liquid crystal display, among a plurality of TFTs formed in each pixel, some TFTs are used as switching elements, and others control current. Prior to the completion of the product, during the manufacture of a display in which a large number of TFTs are formed, the detection method including the identification of defective products at an early stage is very effective for reducing the cost. The reason is as follows: no subsequent steps are required for the defective product; it is easy to repair defective products due to early detection, etc. For example, in an EL display, one electrode (pixel electrode) and a capacitor of the EL element can be formed therebetween. The transistors are connected to each other. Even if there are some problems in the light-emitting circuit or circuit element for controlling the light-emitting element, it is difficult to confirm the existence of the defect until the completion of the EL display and even the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied. ) A '2 / Μ -4 - 1257688 A7 B7 V. Description of invention (2) Displayed until. Actually, for an EL panel which is not a product, in order to distinguish from a satisfactory product, a light-emitting element is formed, packaged, and a connector is fixed to complete an EL display, thereby detecting the EL display. In this case, the method of forming the light-emitting element, the package, and the fixed connector becomes useless, so that the reduction in time and cost cannot be reduced. Further, even in the case where an EL panel is formed using a multi-corner substrate, the method of encapsulating and fixing the connector is useless, and thus time and cost cannot be reduced. In order to detect a portion of an operation failure caused by a change in the pattern width of a semiconductor film, an insulating film or a wiring (hereinafter simply referred to as "pattern"), and a portion which is broken or short-circuited due to formation of dust or a defect film, and for verification The circuit or circuit component to be tested is tested for normal operation. This defect detection is mainly divided into optical detection method and probe detection method. According to the optical detecting method, the pattern formed on the substrate is read by a CCD or the like, and the read pattern is compared with the reference pattern to identify the defect. According to the probe detection method, the end of the fine needle (probe) is placed on one side of the substrate, and the defect is identified based on the magnitude of the current or voltage between the probes. Usually, the former method is called non-contact type detection method, and the latter method is called stylus type detection method. The above-described detection method of directly connecting (contacting) to the TFT substrate by wiring identifies a defective TFT substrate which can be used for a good TFT substrate of a product and cannot be used for a product. However, according to this method, dust may adhere to the substrate during connection fixing and removal. Further, the wiring may be damaged according to the method of detecting the defective portion by directly contacting the fine needle (probe) with the wiring. This test method may be unnecessarily increased during the test method. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the back and fill out this page). - 1257688 A7 , _ B7 ♦ V. Description of invention (3) Add defective products. Moreover, according to the optical detection method, it takes a long time to detect many times. (Please read the note on the back side and then fill out this page.) SUMMARY OF THE INVENTION Therefore, in view of the above, it is an object of the present invention to provide a method of manufacturing a semiconductor device including a non-contact type detecting method which can be performed before the EL display is completed. It is confirmed whether the circuit or circuit element formed on the tft substrate is normally operated 'to mass-produce the active matrix type EL display. The inventors of the present invention have found a method of allowing current to flow through the wiring of the TFT substrate by electromagnetically inducing an electromotive force to the wiring without directly connecting the detecting device to the array substrate. More specifically, in order to detect the TFT substrate, an inspection substrate is separately prepared. The inspection substrate has a primary coil, and the array substrate (TFT substrate) to be inspected has a secondary coil. The secondary coil is formed by patterning a conductive film formed on a substrate. According to the present invention, the primary coil and the secondary coil can be made such that a magnetic substance is provided at the center to form a magnetic path. Further, a coil which does not provide a magnetic substance at the center can also be used. The primary coil of the inspection substrate overlaps with the secondary coil of the array substrate, thereby maintaining a predetermined interval therebetween, and an alternating voltage is applied across the primary coil, thereby generating an electromotive force at both ends of the secondary coil. It is desirable to check that the spacing between the substrate and the array substrate is as small as possible, and that the primary coil and the secondary coil are preferably close to each other to the extent that the spacing therebetween can be controlled. The winter standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) · " -6 - 1257688 A7 . _____B7___ · V. Invention description (4) (Please read the note on the back and fill out this page) The AC voltage of the electromotive force generated in the secondary coil is appropriately smoothed after being corrected in the TFT substrate, so that a voltage can be obtained as a DC voltage (hereinafter referred to as "supply voltage") for driving a circuit or circuit element of the TFT substrate. . Further, the AC voltage as the electromotive force generated in the secondary coil is appropriately shaped by a waveform shaping circuit or the like, and thus the obtained voltage can be used as a signal for driving a circuit or a circuit component of the TFT substrate (hereinafter referred to as "driving signal"). ). A drive signal or supply voltage is applied to the TFT substrate to drive the circuit or circuit components. When a circuit or circuit component is driven, a weak electromagnetic wave or electric field is generated in the circuit or circuit component. By confirming the state of weak electromagnetic waves or electric fields, a TFT substrate containing circuits or circuit elements that are not normally operated can be found from a large number of circuits or circuit elements. A known method can be employed as a method of confirming the generation of a weak electromagnetic wave or electric field in a circuit or circuit component. According to the present invention, due to the above configuration, the suitability of the TFT substrate for the product can be confirmed without directly connecting the probe to the TFT substrate. Therefore, defects caused by dust adhering to the TFT substrate during the detecting method are reduced, which prevents a decrease in yield. Unlike optical detection, the suitability of a TFT substrate for a product can be determined in one test method. Therefore, the detection method is simpler, and in the case of mass production, the detection method can be performed in a short time. In addition, unnecessary light-emitting elements are not formed. The diagram simply illustrates the Prayer #张Scale Applicable to China National Standard (CNS) A4 Specification (210X297 mm) 1257688 A7 ___ B7__* t V. Invention Description (5) Figure 1 shows the relationship between the inspection substrate and the array substrate; Figure 2A -2D schematically shows a method of manufacturing the light-emitting device; (please read the back note first and then fill in the page) Figure 3 shows a circuit diagram of the rectifier circuit and the waveform shaping circuit; Figures 4A and 4B schematically show the inspection substrate and the array substrate Figure 5 shows the relationship between the array substrate and the TFT substrate; Figure 6 shows the relationship between the inspection substrate and the array substrate; Figures 7A-7D show an exemplary embodiment of the invention; Figures 8A-8C show an exemplary embodiment of the invention Figures 9A-9C show an exemplary embodiment of the present invention; Figures 10A and 10B show an exemplary embodiment of the present invention; Figure 11 shows an exemplary embodiment of the present invention; Figure 12 shows an exemplary embodiment of the present invention; Exemplary Embodiments of the Invention; Fig. 14 shows an exemplary embodiment of the present invention; Figs. 15A to 15C show an exemplary embodiment of the present invention; Figs. 16A to 16C show an exemplary embodiment of the present invention; Figs. 17A and 17B show the present invention. Exemplary Embodiments of the Invention; Figs. 18A and 18B show an exemplary embodiment of the present invention; Figs. 19A to 19H show an electric apparatus using a light-emitting device manufactured according to the present invention in a display portion; Figs. 20A and 20B show an alternating current to a pulsating current. The rectified signal changes with time; Figure 21 A-2 1C shows the change of the DC generated by increasing the ripple current with the elapsed time; the scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Gongdong) " &quot 8 - 1257688 A7 B7 V. INSTRUCTION DESCRIPTION (6) FIG. 22 is a perspective view showing the array substrate and the inspection substrate during the inspection; FIGS. 23A-23C show an enlarged line; and FIGS. 24A-24F show the present invention. Typical embodiment. Main component comparison table 100 Array substrate 101 TFT substrate 102 Driving circuit 103 pixel portion 104a secondary coil 104b rectifier circuit 104c waveform shaping circuit 105 external signal input terminal 106 inspection substrate 200 substrate 201 TFT 202 interlayer insulating film 203 insulating film 204 Wiring 205 Transparent Conductive Film 206 Photonic Electrode 207 Embankment 601 Diode-Naipan Scale Applicable to China National Standard (CNS) A4 Specification (210X297 mm) (Please read the back note first and then fill in this page) -9 - 1257688 A7 B7 V. Description of invention (7) 602 Capacitor 603 Resistor 604a, 604b Terminal 606, 608 Resistor 607 ' 609 107; Capacitor primary coil

i rP 108 material 109a, 109b transparent conductive film 104 secondary coil forming portion 107 - secondary coil forming portion 110 hole coil forming portion 111 driving signal input device 112a light source 112b optical system 113 video camera 114 image processing device 208 insulating film 209 organic compound Layer 210 cathode 301 inspection substrate 302 primary coil 305 drive signal input device 303 antenna 304 hole (please read the back of the note before filling this page)

- This paper scale applies to Chinese National Standard (CNS) A4 specification (210X297 mm) 10 1257688 A7 B7 V. Invention description (8) 306 Image processing device 900 base (please read the back note before filling this page) 901 Bottom Insulating film 901a, 901b Barium hydroxide film 902-906 Semiconductor layer 907 Gate insulating film 908 Heat-resistant conductive layer 909 Second conductive layer 910a, 910b Blocking mask 911-915 Conductive layer 9 1 6-920 First n-type impurity Region 92 1 - 925 Conductive film 926-930 Second shape conductive film 933-937 Second n-type impurity region 939, 940, 94 1 Impurity region 93 8a, 93 8b Block mask 942 First interlayer insulating film 943 Second intermediate layer Insulation film 944 Insulation film 945-952 Wiring 953 Anode 954 Organic insulating film 955 Antistatic film 956 Embankment 'This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 朗-11- 1257688 A7 B7 V. Description of invention (9) 957 Insulation film 958 Organic compound layer 959 Cathode 960 Light-emitting element 1000 p-channel TFT 1001 n-channel TFT 1002 switch TF Τ 1003 Current control TF Τ 943B Dense film 943C DLC film 50 Array substrate 52 Gate electrode 51 bottom insulating film 53 gate insulating film 54 crystalline semiconductor film 55 source/turn region 56 insulating film 57 wiring 58 interlayer insulating film 59 pixel electrode 60 organic insulating film 61 antistatic film 62 embankment 63 organic compound layer ( Please read the notes on the back and fill out this page. - The Chinese Standard (CNS) A4 (210X297 mm) -12- 1257688 A7 B7 5. Description of Invention (& 64 Cathode 64a Cathode (Please Read the back note and fill out this page.) 64b Transparent Conductive Film 65 Protective Film 1100 Substrate 1101 Bottom Insulation Film 1102 Tantalum Nitride Film 1103 Amorphous Semiconductor Film 1104 Containing Catalyst Layer 1105 Crystalline Film 1106 Thin Layer 1107 Suction Parts 1108 crystallization film 801 source side driver circuit 802 pixel part 803 gate side driver circuit 804 sealing substrate 805 sealant 807 spacer 808 connection wiring

809 F P C 810 substrate

811 Current Control TFT 812 Anode - This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) 汹-13- 1257688 A7 B7 V. Invention description (〇813 η channel TFT 814 Ρ channel TF Τ 815 levee 816 organic Compound layer 817 Cathode 818 Light-emitting element 821 Insulation film 703 Wiring 704a, 704b Gate electrode 704 Switch TF D-705 汲 Gate connection 715 Source connection 706 Current control TF Τ 707 Sense electrode 716 Current supply line 717 Dip connection 718 Anode 719 Capacitor 720 Semiconductor film 200 1 Shell 2002 Support 2003 Display unit 2004 Speaker unit 2005 Video input unit (please read the note on the back and fill out this page) - Install · Set the guide to the Chinese National Standard (CNS) A4 specifications (210X297 mm) -14- 1257688 A7 B7 V. Invention description (4 2101 body 2102 display unit (please read the back note first and then fill in this page) 2103 image receiving unit 2104 operation key 2105 external connection 埠 2106 shutter 2201 body 2202 Shell 2203 Display Unit 2204 Keyboard 2205 External Connection 埠 2206 Indicator Mouse 2301 body 2302 display unit 2303 switch 2304 operation button 2305 infrared 埠 2401 body 2402 case

2403 display unit A

2404 Display unit B 2405 Recording media recording unit 2406 Operation key 2407 Speaker unit contribution Applicable to China National Standard (CNS) A4 Secret (2H) X 297 羡) — -15 - V. Invention description (j 1257688 A7 B7 250 1 body 2502 Display unit 2503 Arm early 260 1 Body 2602 Display unit 2603 Shell 2604 External connection 埠 2605 Remote control receiving unit 2606 Image receiving unit 2607 Battery 2608 Audio input unit 2609 Operation key 270 1 Body 2702 Shell 2703 Display unit 2704 Audio input unit 2705 Audio Output unit 2706 operation key 2707 external connection 埠 2708 antenna detailed description of the preferred embodiment implementation mode 1 In this embodiment mode, reference will be made to Figures 1-5 and 20A-B to 23A - CNS ) A4 size (210X297 mm) (Please read the notes on the back and fill out this page)

-16- 1257688 A7 B7

5. Description of the Invention (A 23C describes a method of manufacturing a plurality of TFT substrates 101 on the array substrate 100, a method of detecting the quality of the manufactured TFT substrate, and a method of forming a light-emitting element on a TFT substrate which is determined to be satisfactory. In the embodiment mode, a case where a light-emitting element is formed on a TFT substrate will be explained. However, the present invention is applicable not only to a light-emitting device (EL display) having a light-emitting element but also to all electric devices using a semiconductor element utilizing semiconductor characteristics, such as A liquid crystal display device, for example, a transistor, particularly a field effect transistor, is usually a MOS (Metal Oxide Semiconductor) transistor and a TFT (Thin Film Transistor). First, a TFT, pixel portion 103 is formed on the array substrate 100. The secondary winding 104a of the transformer, the driving circuit 102 of the rectifier circuit 104b and the waveform shaping circuit 104c, and the external signal input terminal 105. The TFT shown in Figs. 2A-2D controls the current flowing through the light emitting element in the pixel portion 103. And in this specification, such a TFT is called a current control TFT by using a transformer provided on the inspection substrate. The secondary coil, the secondary coil of the transformer transmits the driving power and the driving signal to the TFT substrate in a non-contact manner. The rectifier circuit rectifies the alternating voltage applied from the primary coil into a direct current voltage. The waveform shaping circuit corrects the alternating current voltage applied from the primary coil to The waveform of the drive signal (or close to the shape of the signal waveform) Fig. 3 shows a schematic circuit diagram of the rectifier circuit 104b and the waveform shaping circuit 104c. Figs. 4A and 4B show schematic top views of the array substrate 100 and the inspection substrate 106. Then, in formation An interlayer insulating film 202 is formed on the TFT 201 on the substrate 200, and then flattened. As the interlayer insulating film 202, the thermal index can be applied to the Chinese National Standard (CNS) A4 specification (210X: 297 mm) _ ' -17 - (Please read the notes on the back and fill out this page) 'Installation 1257688 A7 ____B7 V. Description of invention (4 selected from polyimine, acrylic resin, polyamide, polyimine-decylamine, ring An organic resin material of an oxyresin and benzocyclobutene (BCB), or an inorganic insulating material selected from the group consisting of cerium oxide and cerium oxynitride. The average film thickness is set to about 1. 0-2.0/zm (Fig. 2A) Further, an insulating film 203 is formed on the interlayer insulating film 202, and then an uranium resist mask containing a desired pattern is formed, and a contact hole reaching the germanium region of the TFT 201 is formed to provide wiring. 204. A conductive metal film made of Al, Ti or an alloy thereof can be formed by sputtering or vacuum vapor deposition, and then patterned into a desired shape, thereby obtaining a wiring. Then, a light-emitting element is formed. The transparent conductive film 205 of the anode. The transparent conductive film 205 is usually formed of indium tin oxide (ITO) or indium oxide mixed with 2-20% zinc oxide (ZnO). The transparent conductive film 205 is etched to form the pixel electrode 206. An organic insulating film 207 to be a bank is formed (in the present specification, an insulating film having an opening on the pixel electrode and disposed so as to cover the end of the pixel electrode will be referred to as a "bank") may be used in the organic insulating film. An antistatic film is formed on the surface to prevent charging. The first reason for forming the antistatic film is to prevent dust from adhering to the array substrate during the detection method performed later. The second reason is as follows. As the electrode material for the light-emitting element, alkali metal materials such as A1 and Mg are used, which may cause a critical damage to the TFT characteristics. When the alkali metal is mixed in the active layer of the TFT, the electrical characteristics of the TFT change, and thus the reliability with time lapse cannot be guaranteed. In order to prevent the TFT characteristics from being damaged, the processing method (clean space) of the TFT manufacturing method is separated from the processing room (clean space) of the light-emitting element manufacturing method, thereby preventing the un-sticker scale from applying the Chinese National Standard (CNS) A4 specification (210×297 mm).

.ci / -I (Please read the note on the back and fill out this page) 装·订-18- 1257688 A7 __B7_ V. Description of the invention (4 The active layer of the TFT is contaminated with alkali metal. Thus, when moving the processing chamber 'Prevents dust from adhering to the array substrate. (Please read the back note first and then fill out this page.) For the above reasons, an antistatic film is provided on the organic insulating film. In this embodiment mode, the antistatic film can be used by A known antistatic material is removed by water rinsing. Any antistatic treatment can be used instead of forming an antistatic film. Fig. 5 shows a schematic view of the array substrate in this state. Then, it is performed for confirming formation on the array substrate. Detection of operation of circuit or circuit element. Next, a detection method will be described with reference to FIG. 1 (FIG. 22). On the array substrate 100, a secondary coil 104a, a rectifier circuit 104b, and a waveform shaping circuit 104c are formed during the same method as in manufacturing the TFT. The inspection substrate 106 is disposed above the array substrate 100. The inspection substrate 106 is horizontally covered in the vicinity of the array substrate 100 in a non-contact manner (including a predetermined interval). The bottom 106 transmits the power supply voltage and the drive signal, and detects the operation of the circuit or circuit component on the array substrate (TFT substrate) based on the change of the electric field and the electromagnetic field. As shown in FIG. 3, the rectifier circuit 104b is composed of a diode 601 and a capacitor. 602 and resistor 603. The diode 601 rectifies the input AC voltage into a DC voltage. In this embodiment mode, since the diode of the rectifier circuit 1 〇 4b is formed in the same method as the TFT is formed on the array substrate, The TFT is replaced with a diode by the known method shown in Fig. 3. Fig. 20A shows the change of the alternating voltage with time before being rectified in the diode 601. Fig. 20B shows the change of the voltage with time after being rectified. Just as the comparison between the curve of Fig. 20A and the curve of 20B is understood; the scale of the 蹲 is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -19- 1257688 A7 B7 V. The invention description (collected, The voltage after being rectified has 0 or a 値 (so-called ripple voltage) having a polarity on a half-cycle basis. The ripple voltage shown in Fig. 20B cannot be used as a power supply voltage. Therefore, usually In this case, the electric charge is accumulated in the capacitor, whereby the pulsating voltage is flattened to a direct current voltage. In fact, the pulsating voltage can be made sufficiently gentle by the thin film semiconductor. However, since a large-capacity capacitor needs to be formed, the capacitor itself The area is too large, which is not practical. Therefore, according to the present invention, the ripple voltages having different phases are combined (added) with each other after being rectified, thereby smoothing the voltage. According to the structure, even if the capacity of the capacitor is very large Small, so that the pulsating voltage is also flat enough, and even if the capacitor is not provided, the pulsating voltage is sufficiently gentle. In Fig. 3, four pulsating signals having different phases output from the four diodes 601 are mutually Add up to generate the power supply voltage. However, the present invention is not limited to this. The number of phase divisions is not limited to four. Any number of phase divisions can be used as long as the output from the rectifier circuit can be flattened to be used as the supply voltage. Fig. 21 A-2 1C shows the variation of the power supply voltage with time by adding a plurality of rectified signals to each other. Fig. 21A shows an example in which four ripple voltages having different phases are added to each other to generate a power supply voltage. Since the power supply voltage is generated by adding a plurality of ripple currents, there is a chopping wave as a component other than the branch current. Chopping refers to the scratch between the highest voltage and the lowest voltage of the power supply voltage. Since the chopping is small, the power supply voltage is close to DC. Figure 21B shows that by making the eight pulsating voltage phases with different phases, the paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ... -20 - (Please read the back note first and then fill out this page)

1257688 A7 __B7_ V. Description of the invention (4) The power supply voltage obtained with time changes. Compared with the change of the power supply voltage shown in Figure 2 1 A, it should be understood that the chopping is small. Read the precautions on the back page and fill in this page. Figure 21C shows the change of the power supply voltage over time by adding 16 pulsating voltages with different phases. The power supply voltage shown in Figure 2 1 B is over time. In contrast, it should be understood that the chopping is small. As described above, it should be understood that by adding a large number of pulsating voltages having different phases to each other, the chopping of the power supply voltage is small, and a more satisfactory direct current can be obtained. Thus, as the number of phase divisions increases, the power supply voltage output from the rectifying circuit 104b is more gradual. Further, as the capacity of the capacitor 602 becomes larger, the power supply voltage output from the rectifying circuit is more gradual. The power generated in the rectifying circuit 104b The voltage is outputted through the terminals 604a and 604b. More specifically, the output is close to the ground voltage from the terminal 604a, and the power supply voltage having the positive polarity is output from the terminal 604b. The anode and cathode of the diode are connected in direction, and the polarity of the output power supply voltage may be reversed. In the case where the anode and the cathode are connected to the terminals in opposite directions with respect to the diode, the output directions are opposite. Formed on the TFT substrate. Various circuits or circuit components (drive circuits, peripheral logic circuits, etc.), and the magnitude of the power supply voltage to be transmitted to the circuit or circuit components varies depending on the type or use of each circuit or circuit component. The rectifier circuit shown in FIG. In 104b, by adjusting the amplitude of the input AC signal, the magnitude of the voltage to be input to each terminal can be adjusted. Further, by changing the terminal to be connected according to the circuit or circuit component, the power transmitted to the circuit or circuit component can be changed. The rectifying circuit 104b used in the present invention is not limited to the cultivating sheet standard applicable to the cultivating standard (cns) shown in Fig. 3 m - (21 〇 x 厘 ~ ) ~ - - 21 - 1257 688 A7 B7 V. Description of the invention ( <Configuration. The rectifier circuit 1 〇 4b used in the present invention may be a circuit capable of transmitting a DC power supply voltage from an input AC signal. Precautions on the back side. Fill in this page.) Waveform shaping circuit 1 04c is an electronic circuit for forming waveforms and shaping waveforms of voltage, current, etc., which vary with time. In Figure 3, there are resistors 606 and 608 and capacitors. Each of the circuit elements of 607 and 609 is combined to constitute a waveform shaping circuit 104c. Needless to say, the waveform shaping circuit 104c is not limited to the configuration shown in Fig. 3. The waveform shaping circuit 104c employed in the present invention generates a clock signal from the electromotive force input to the alternating current. (Clk), start pulse signal (SP) and video signal and output them. The signals output from the waveform shaping circuit 104c are not limited to those described above. Signals having any waveform can be output from the waveform shaping circuit 104c as long as they can be generated by It is sufficient to monitor the electromagnetic wave or electric field that determines the defective portion in the circuit or circuit element of the TFT substrate. Moreover, the amplifier is denoted by reference numeral 605. On the inspection substrate 106, a primary coil 1〇7 of the transformer and a material whose optical characteristics are changed by the electric field change are provided (bucces material (

PockeIs cell or liquid crystal 108, and a transparent conductive film (formed generally by IT0) 109a and 10b formed to sandwich the material 1〇8, and the transparent conductive film 109b is grounded. The primary coil 10a formed on the inspection substrate 106 and the secondary coil 104a formed on the array substrate are not magnetic substances provided at the center to form a magnetic path. When the inspection substrate 106 and the array substrate 1 are held close to each other, the secondary coil 104a generates an electromotive force between its two terminals by applying an alternating voltage between both ends of the primary coil 107a. The AC voltage as the electromotive force generated in the secondary coil is formed in the 2# sheet scale applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) TM - 22 - 1257688 A7 ___B7 V. Invention description (2J) (Please first Read the backside note and fill out this page) The rectifier circuit 104b on the array substrate 100 is rectified and smoothed, whereby the flattened voltage can be used as a DC voltage for driving the circuit or circuit component on the array substrate 1 Hereinafter referred to as "power supply voltage"). Further, the AC voltage as the electromotive force generated in the secondary coil 104a is appropriately formed into a waveform waveform by the waveform shaping circuit 10c4 formed on the array substrate 100. Thereby, the shaped voltage can be used to drive the array substrate 1 The signal of a circuit or circuit component on the cymbal (hereinafter referred to as "drive signal"). Next, the configuration of the primary coil 10a and the secondary coil 104a will be described in detail. 23A-23C show enlarged views of the coil. The coil shown in Fig. 23A has a circular spiral shape in which coil terminals are formed at both ends of the coil. The turns shown in Fig. 23B have a rectangular spiral shape in which coil terminals are formed at both ends of the coil. With regard to the coil used in the present invention, only the entire wiring of the coil is required to be formed in the same plane, and the wiring of the coil is wound into a spiral shape. Therefore, the wiring of the coil can assume a circular or angular shape when viewed in a direction perpendicular to the plane in which the turns are formed. Further, if necessary, the number of turns of the coil, the line width, and the area occupying the substrate can be appropriately set by the designer. As shown in Fig. 1, the primary coil forming portion 107 of the inspection substrate 106 and the secondary coil forming portion 104 of the array substrate (TFT substrate) 100 are overlapped with each other at a predetermined interval therebetween. Fig. 23C is an enlarged view showing a portion where the primary coil forming portion 107 and the secondary coil forming portion 104 are superposed. In Fig. 23C, the winding direction of the wiring of the primary coil 107a is the same as that of the secondary coil 104a. However, the winter final sheet scale of this issue applies to the Chinese National Standard (CNS) Α4 specification (210X297 mm) -23- 1257688 A7 __B7_ V. The invention description (2) is not limited to this configuration. The winding direction of the primary coil may be opposite to that of the secondary winding. (Please read the caution on the back side and then fill out this page.) In the present embodiment mode, gas is injected between the inspection substrate 106 and the array substrate 100 via the inspection substrate 106' under a predetermined pressure, thereby maintaining a predetermined interval therebetween. This interval can be appropriately determined by those skilled in the art. However, in this embodiment mode, the interval is preferably in the range of 10-200 // m. Further, in order to inject gas between the inspection substrate 106 and the array substrate 100, the inspection substrate 106 is provided with a plurality of holes for injecting gas, and an insulating liquid may be used instead of the gas in order to maintain the space between the array substrate 100 and the inspection substrate 106. interval. The detecting device is provided with a driving power source and a driving signal input device 111, a light source (a non-interference source such as a halogen lamp and a discharge lamp can be employed) 11 2a, an optical system 112b, a video camera 113, and an image processing device 114. Before the voltage is applied to the TFT, the light from the light source 112a is irradiated, and the light state from the surface of the Pockel cell is captured by the video camera 113 as an image, and then image processing is performed by the image processing device 114. As a method of detecting information formed on a circuit or circuit element provided on the array substrate (TFT substrate) 100 on the inspection substrate 106, a material (Pockel crystal) whose optical characteristics are changed by an electric field change such as liquid crystal or Pockel may be employed. Cell. In the inspection substrate 106, the Pockel cell 108 is sandwiched between the first electrode 109a and the second electrode 109b (Fig. 22).

Pockelcell is an optical element having an electro-optic effect (Pockel effect) which utilizes electro-optic characteristics to vary depending on the applied voltage. Applicable to China National Standard (CNS) 8 4 specifications (210X297 mm) by the scale of Zhang Xiu Zhang -24- 1257688 Α7 Β7 5, invention description (please read the back note and fill out this page)

Applying an alternating voltage or pulse voltage to the crystal, this property can be used for the generation and detection of light modulation, shutter, and circularly polarized light. More specifically, the Pockel cell is a crystal of NH4H2P〇4, BaTiCh, KH2PC) (KHP), KD2P〇4 (D KDP), LiNbCh, ZnTe or Zn〇. A circuit or circuit element like an array substrate is driven to change the electric field, and a change in the electric field causes birefringence in the Pockel cell, whereby the transmittances are different. More specifically, the Pockel cell in the portion superimposed with the defective circuit or circuit element appears to be brighter or darker than the Pockel cell in the portion overlapped with the normal circuit or circuit element. For example, the light transmittance changes between a normal TFT and a defective TFT formed in a pixel. The reason is as follows: When the device substrate is disposed so as to be perpendicular to the optical axis of the ferroelectric crystal of the Pockel cell, birefringence is generated in the ferroelectric crystal due to an electric field generated in the circuit or circuit element. The refractive index of the birefringence of the polarized light having a component in the direction of the electric field is determined by the electric field strength. Therefore, in a plurality of circuits or circuit elements having the same structure and normal operation, electric fields having the same intensity are generated, and thus the refractive indices of the ferroelectric crystals in the portion overlapping each circuit or circuit element are substantially the same. However, the electric field generated in the defective circuit or circuit element is stronger or weaker than the electric field generated in other normal circuits or circuit elements. Therefore, the refractive index of the ferroelectric crystal in the portion overlapping the defective circuit or circuit element is different from the refractive index of the ferroelectric crystal in the portion overlapping with other normal circuits or circuit elements. When observing the device substrate by the Pockel cell, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied to the defective circuit or circuit component compared to the portion overlapping with the normal circuit or circuit component. 1257688 A7 ____B7_ V. INSTRUCTIONS (The 4 stacks appear brighter or darker. (Please read the back note first and then fill out this page.) For example, as shown in Figure 1, the following is possible: using an optical system For example, the polarization beam splitter separates light in a direction perpendicular to the array substrate, and monitors the intensity of the light, thereby calculating the transmittance of the Pockel cell to detect the defective portion. The result obtained by monitoring the light multiple times can be performed. The processing is performed to detect the defective portion. It is also possible to input the output from all the circuits to be detected to the circuit for detection, and measure the electric field strength generated in the circuit for detection using the electro-optical element, thereby determining the existence of the defect Or determine the defect itself. The use of the circuit for detecting does not require the use of a Pockel cell to monitor all circuits or circuit components to be detected. This simplifies and speeds up the detection method. The detection of defects is not limited to the pixel part, and the detection method can be applied to any circuit or circuit element. For example, the Pockel cell can be superimposed with the driving circuit or the signal line driving circuit, and the refractive index is monitored. Thus, the defective portion can be similarly detected. Further, defects such as disconnection and short circuit generated in the routing route on the device substrate can be similarly detected. Due to the above detection method, it is confirmed whether each TFT substrate on the array substrate is suitable for the product. Thereafter, in the case where the antistatic film has been formed before the detection method, the antistatic film is removed, and the organic insulating film is uranium-etched to form the embankment 207, and then heat-treated at 230 to 350 ° C. Then, the array substrate 1 is separated by The TFT substrate 101 is formed. How to form the TFT substrate and the secondary coil forming portion 104 (the secondary coil 104a, the rectifier circuit 104b, and the waveform shaping circuit 104c) on the array substrate 100 can be appropriately determined by those skilled in the art. Preferably, the final sheet size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -26- 1257688 A7 B7 V. Invention Description ('The TFT substrate and the detection circuit, so that the driving circuit on the TFT substrate ι〇1 can be used with the secondary coil l〇4a used in the detection method, the rectifier circuit 1 is servant (please read the back first) The precautions are filled out again. The waveform shaping circuit 104c is separated so as not to leave electrical and physical connections therebetween, as shown in FIG.

Then, on the pixel electrode 206 of the TFT substrate 101 which is determined to be suitable for the product in the above-described detecting method, the insulating film 208, the organic compound layer 209, and the cathode 210 are formed. The TFT substrate decided to be suitable for the product is removed from the manufacturing method for analyzing defects. When the defective TFT substrate can be repaired to suit the product, the defective TFT is repaired and returned to the detection method. As the insulating film 208', an organic resin insulating film made of polyimide, amide, acrylic, or the like is formed by spin coating. The organic compound layer 209 is formed by stacking a hole injecting layer, The hole transport layer, the hole barrier layer, the electron transport layer and the electron injection layer, and a combination of a plurality of layers of the light-emitting layer are formed. The thickness of the organic compound layer 209 is preferably about 10 to 400 nm (Fig. 2D). It is formed by vapor deposition after the formation of the organic compound layer 209. As the material of the cathode 210, not only MgAg or an Al-Li alloy (an alloy of aluminum and lithium) but also a periodic table 1 or 2 may be employed. A film formed by co-vapor deposition of an element of the group and aluminum. The thickness of the cathode 210 is preferably about 80 to 200 nm. As described above, the light-emitting device can be manufactured by using the plurality of TFT substrates 101 formed on the array substrate 100. In this embodiment mode, the glass substrate is used as an array substrate. However, the paper size is also applicable to the Chinese National Standard (CNS) A4 specification (21〇><297 mm). Two hearts -27- 1257688 A7 B7 Description of the invention (23⁄4 ( Read the back of the precautions and fill out this page. You can use a quartz substrate or a plastic substrate. In the case of a plastic substrate, the substrate has a low heat-resistant temperature, so those skilled in the art can appropriately determine the temperature at which the plastic substrate can withstand. Manufacturing method. The number of turns, the line width, the shape, and the area occupying the substrate of the coil formed on the inspection substrate and the array substrate can be appropriately determined by those skilled in the art, but considering the number of turns of the secondary coil and the number of turns of the primary coil The ratio is inversely proportional to the ratio of the voltage introduced to the secondary coil to the voltage applied to the primary coil, so it is important to determine these parameters. Embodiment Mode 2 In this embodiment mode, description will be made with reference to FIGS. 4A and 4B and FIG. Another detection method for a TFT substrate. When a circuit or circuit element formed on a TFT substrate on an array substrate is operated, electromagnetic waves are generated. According to the detection method disclosed in this embodiment mode, by measuring the intensity and frequency of electromagnetic waves And the intensity and frequency of electromagnetic waves based on a certain time period, confirming whether the TFT substrate is suitable for production The intensity of the electromagnetic wave of the circuit on the TFT substrate that is determined to be satisfactory (suitable for the product) and the intensity and frequency over a period of time can be measured and used in comparison to determine the suitability of the TFT substrate for the product. Then, using electromagnetic induction, the power supply voltage and the driving signal are transmitted to the circuit or circuit component on the TFT substrate formed on the array substrate. At this time, the measurement substrate is measured by using an inspection substrate having an antenna capable of measuring electromagnetic waves. China National Standard (CNS) A4 specification (210X297 mm) "~' -28 _ 1257688 A7 B7 V. Description of invention (2 έ intensity and frequency and intensity and frequency based on a certain time period (a certain timing). (Please read the precautions on the back side and then fill out this page.) The inspection substrate 301 is provided with the primary coil 302 in the same manner as in the embodiment mode 1. When an alternating voltage from the driving power source and the driving signal input means 305 is applied between the two terminals of the primary coil, an electromotive force is generated between the two terminals of the secondary coil 104a. Then, the alternating current voltage as the electromotive force generated in the secondary coil 104a is rectified and flattened by the rectifying circuit 104b formed on the array substrate 100, whereby the flattened voltage can be used as a circuit or circuit element for driving the array substrate. The DC voltage (hereinafter referred to as "supply voltage"). Further, the AC voltage as the electromotive force generated in the secondary coil 104a is appropriately formed into a signal waveform by the waveform shaping circuit 104c formed on the array substrate 100, whereby the shaped voltage can be used as a circuit for driving the array substrate 100. Or the signal of a circuit component (hereinafter referred to as "drive signal"). When the driving power source and the driving signal are transmitted by the rectifying circuit and the waveform shaping circuit, as described in Embodiment Mode 1, the circuit or circuit element formed on the TFT substrate operates to generate electromagnetic waves. The intensity and spectrum of the generated electromagnetic waves and the intensity and spectrum on the basis of timing are measured by the antenna 303 provided on the inspection substrate 301. As the antenna 303 (electromagnetic sensor) provided on the inspection substrate 301, a known sensor (antenna) having a measurement frequency band of 1 MHz - 1 GHz can be employed. Furthermore, in order to make the inspection substrate 301 not in contact with the array substrate 100, and in order to improve the measurement repeatability of electromagnetic waves generated by circuits or circuit elements on the array substrate 100, it is necessary to always maintain the inspection substrate 30 1 and the array substrate 1 The predetermined interval between. In this paper, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied. L,}L -29- 1257688 A7 _B7___ V. Invention description (2> (Please read the back note and fill out this page) In the mode, gas is injected into the inspection substrate 301 at a predetermined pressure, thereby maintaining a predetermined interval between the inspection substrate 30 1 and the array substrate 100. This interval can be appropriately determined by those skilled in the art. However, in the present embodiment mode The interval is set in the range of 10-200 // m. In order to inject the gas, the inspection substrate is provided with a plurality of holes 304. Figures 4A and 4B schematically show the relationship between the primary coil 302 and the external signal input terminal on the inspection substrate 301. And a relationship between the secondary coil 104a and the external signal input terminal 105 on the array substrate 100. In the antenna 303, electromagnetic waves generated for obtaining positional information such as circuits or circuit elements formed on the array substrate 100 are obtained. The resolution required for the intensity and frequency, preferably used to form the antenna 303 on the inspection substrate 30 1 as small as possible so that a smaller size can be formed The spacing used to form the antenna 303 can be appropriately determined by those skilled in the art to obtain an optimum resolution according to the pixel size. Further, by keeping the interval between the inspection substrate and the array substrate as much as possible (in this case) In the implementation mode, 100/zm or less, the resolution can be improved. The measurement results of the intensity and frequency of the electromagnetic wave are obtained by the antenna 303 and analyzed by the image processing device 306. Thus, for example, by color coding The intensity distribution of electromagnetic waves. According to the detection method disclosed in this embodiment mode, it is confirmed that the intensity and frequency of electromagnetic waves generated by circuits or circuit elements and the intensity and frequency of electromagnetic waves on a time period basis are simultaneously measured. The operation of the circuit or circuit component on the array substrate. Therefore, it can be used in a short period of time to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) -30- 1257688 A7 B7 in a short period of time. V. Invention Description (23⁄4 recognition Whether the TFT substrate is suitable for the product. When the detection method in this embodiment mode is completed, the array substrate 100 is divided into single A unique TFT substrate 101. Thereafter, a light-emitting element can be formed on a TFT substrate determined to be suitable for a product to manufacture an EL display. The TFT substrate can be bonded to an opposite substrate with a liquid crystal sealed therebetween to manufacture a liquid crystal display. The above detection method is included, so that the light-emitting element can be formed not on the TFT substrate containing a large number of defective pixels or defective drive circuits. Therefore, the material for forming the light-emitting element is not wasted, which can reduce the manufacturing cost. The contact mode transmits the driving power source or the driving signal to the array substrate. Therefore, the ash is prevented from adhering to the array substrate during the detecting method (or preparation for the detecting method) to contaminate the array substrate. EXAMPLES Example 1 In this example, a light-emitting element manufactured according to the present invention will be explained. Here, a TFT (n-channel TFT and p-channel TFT) having a driving circuit of the present invention provided on the same substrate, a driver circuit provided around the pixel portion, and a transformer 2 will be described with reference to FIGS. 7A to 7D to 10A and 10B. An example of a method of a secondary coil, a rectifying circuit, and a pixel portion for detecting a waveform shaping circuit of a driving of a TFT substrate. First, in this example, a substrate 900 made of glass such as barium strontium borosilicate glass or aluminum borosilicate glass typified by #7059 glass and #1 737 glass manufactured by Corning Corporation is used. As the substrate 900, it can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) w-31- with the paper size. (Please read the back note first and then fill in this page)

1257688 A7 B7 V. INSTRUCTIONS (3) Any substrate of the brightness and a quartz substrate can be used. In addition, a plastic substrate having heat resistance capable of withstanding the processing temperature of the present embodiment can be used. (Please read the notes on the back and fill in the fields. On this, then, as shown in FIG. 7A, a bottom insulating film 901 made of an insulating film such as a hafnium oxide film, a hafnium nitride film or a hafnium oxynitride film is formed on the substrate 900. In this example, the bottom insulating film 901 is formed. There is a two-layer structure. However, the bottom insulating film 901 may have a single layer structure or a multilayer structure of two or more insulating films. As a lower layer of the bottom insulating film 901, SiH4, NH3, and N2 are used as reaction gases, and plasma CVD is used. A hafnium oxynitride film 901a having a thickness of 10 to 200 nm (preferably 50 to 100 nm) is formed. In the present embodiment, a hafnium oxynitride film 901a having a thickness of 50 nm is formed (comparity ratio: Si = 32%, 0 = 27%). , N = 24% and H = 17%. Then, as the upper layer of the bottom insulating film 901, SiH* and N2 are used as reaction gases, and a thickness of 50-200 nm (preferably 100-) is formed thereon by plasma CVD. 1 50 nm) yttrium oxynitride film 901b. In this example, thickness is formed 100 nm yttrium oxynitride film 901b (composition ratio: Si = 32%, 0 = 59%, N = 7%, and H = 2%) Then, a semiconductor layer 902-906 is formed on the underlying insulating film 901. The semiconductor layer 906 It is used to form a diode by deforming a TFT in a rectifier circuit. In the present specification, a semiconductor including a channel formation region and a region in which a high concentration of n-type impurities is to be added as a subsequent source region and germanium region is included. The layer is called an active layer. A known method (sputtering, LPCVD, plasma CVD, etc.) is used to form a semiconductor film having an amorphous structure, and the semiconductor film is subjected to known crystallization (laser crystallization, thermal crystallization, A thermal semiconductor of a catalyst such as nickel is used to obtain a crystalline semiconductor film, and the crystalline semiconductor film is patterned into a desired shape, thereby obtaining a semiconductor layer 902-906. The paper size is applicable to the Chinese National Standard (CNS) Α 4 specification (210X297). PCT) -32- 1257688 A7 _B7_ V. INSTRUCTIONS (3J) (Please read the note on the back and fill out this page.) The semiconductor layers 902-906 are formed to a thickness of 25-80 nm (preferably 30-60 nm). For the material of the crystalline semiconductor film There is no particular limitation. A preferred 'crystalline semiconductor film is composed of a tantalum or niobium (SixGe^(Χ = 〇·〇〇〇1-〇·〇2)) alloy. In this example, by plasma CVD An amorphous germanium film having a thickness of 55 nm is formed, and then a solution containing nickel is held on the amorphous germanium film. The amorphous germanium film is dehydrated at 500 ° C for one hour, thermally crystallized at 550 ° C for 4 hours, and subjected to laser annealing. The crystallization is increased, thereby forming a crystalline ruthenium film. The crystalline germanium film is patterned by photomicrodevelopment to form semiconductor layers 902-906. After the formation of the semiconductor layers 902-906, in order to control the critical enthalpy of the TFT, the (boron or phosphorous) semiconductor layers 902-906 are doped with a trace amount of impurity elements. In the case of producing a crystalline semiconductor film by laser crystallization, a pulse oscillation type or continuous light-emitting excimer laser, a YAG laser or a YV 〇 4 laser can be used. In the case of using these lasers, such a method is employed that the laser light emitted from the laser oscillator is integrated into a linear shape by the optical system and illuminates the semiconductor film. The conditions for crystallization can be appropriately selected by those skilled in the art. However, in the case of using a pseudo-molecular laser, the pulse oscillation frequency is set to 300 Hz, and the laser energy density is set to 100-400 mJ/cm2 (usually 200-300 mJ/cm2). In the case of a YAG laser, the second harmonic is used, the pulse oscillation frequency is set to 30-300 kHz, and the laser energy density is set to 300-600 mJ/cm2 (usually 350-500 mJ/cm2). A linear laser that is integrated into a width of 100 - 1000 // m (e.g., 400 / z m ) is irradiated onto the entire surface of the substrate, and at this time, the linear laser may have an overlap ratio of 50-90%. Then, 907 of the shoddy semiconductor film 902-906 is formed. Gate Insulation Capture #张Scale Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -33- 1257688 A7 _ B7___ V. Invention Description (3) (Please read the back note before filling this page) Membrane 907 It is made of a film containing germanium having a thickness of 40 to 150 nm by plasma CVD or sputtering. In the present embodiment, a ruthenium oxynitride film having a thickness of 110 nm (component ratio: Si = 32%, 0 = 59%, N = 7%, H = 2%) was formed by plasma CVD as the gate insulating film 907. Needless to say, the gate insulating film 907 is not limited to the yttrium oxynitride film, and may have a single layer structure or a multilayer structure of another insulating film containing ruthenium. In the case of using a ruthenium oxide film, tetraethyl orthosilicate (TEOS) and ruthenium 2 are mixed by plasma CVD at a reaction pressure of 40 Pa, a substrate temperature of 300 ° C to 400 ° C, and 0·5. The discharge was performed at a high frequency (13.56 MHz) power density of 0.8 W/cm 2 to form a gate insulating film 907. The ruthenium oxide film thus formed can exhibit satisfactory characteristics as a gate insulating film by a subsequent step of thermal annealing at 400 to 500 °C. A heat-resistant conductive layer 908 for forming a gate electrode having a thickness of 200 to 400 nm (preferably 250 to 350 nm) is formed on the gate insulating film 907. The heat resistant conductive layer 908 may have a single layer structure or, if necessary, a multilayer structure having a plurality of layers (e.g., two or three layers). The heat-resistant conductive layer 908 contains an alloy film selected from the group consisting of Ta, Ti, and W, an alloy containing the element, or a combination of the elements. These heat resistant conductive layers are formed by sputtering or CVD. In order to lower the electric resistance, it is preferable to lower the concentration of impurities contained in the heat-resistant conductive layer. In particular, the concentration of oxygen is preferably set to 30 ppm or less. In this example, a W film having a thickness of 3 〇〇 nm was formed. W can be used as a target, a w film can be formed by sputtering, or a W film can be formed by thermal CVD using tungsten hexafluoride (WF6). In any case, in order to use the film as a gate, it is necessary to lower the resistance. It is hoped that the resistance of the W film is set to the Chinese standard (CNS) A4 specification (210X297 mm) -34- 1257688 A7 _____B7___ V. Invention description (3 (Please read the note on the back and fill out this page) It is 20 // Ω cm or less. The resistance of the W film can be lowered by amplifying the crystal grains. However, in the case where a large amount of impurity elements such as oxygen are contained in the W film, crystallization is prevented and electrical resistance is increased. In the case of sputtering, a W target having a purity of 99.9999% is used, and care should be taken so that impurities do not mix into the gas phase during film formation to form a W film, whereby a resistance of 9-20 // Ω cm can be achieved. On the other hand, in the case where a Ta film is used for the heat-resistant conductive layer 908, the heat-resistant conductive layer 908 can be formed by sputtering. The Ta film is formed by using Ar as a sputtering gas. If an appropriate amount is added to the sputtering gas Xe or Kr can reduce the internal stress of the film to be formed in order to prevent the film from peeling off. The resistance of the Ta film in the α phase is about 20 // Ω cm, so this Ta film can be used for the gate. On the other hand, at / The resistance of the 5-phase Ta film is about 180 // Ω cm, because This Ta film is not suitable for the gate. Since the TaN film has a crystal structure close to the α phase, if a TaN film is formed under the Ta film, the α film of the α phase is easily obtained. Although not shown in the drawing, it is heat resistant. It is effective to form a phosphorium (P) doped germanium film having a thickness of about 2 to 20 nm under the conductive layer 908. This can enhance adhesion and prevent the heat resistant conductive layer 908 to be formed on the tantalum film from being oxidized while preventing The trace amount of alkali metal elements present in the heat-resistant conductive layers 908 and 9〇9 diffuse into the first-type gate insulating film 907. In any case, the heat-resistant conductive layer 908 preferably has a range of 10-50//Qcm. Further, as another example of forming a gate electrode, a semiconductor film typified by a polycrystalline germanium film doped with an impurity element such as phosphorus can be used as the first conductive film. Further, a gate having a three-layer structure can be used. The gate structure of the layer structure can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) by the climbing standard. -35- 1257688 A7 B7 V. Invention Description (3 are formed by the following combinations: tungsten (W) film as the first Conductive film, Cu film as a second guide a combination of a film and a titanium (Ti) film as a third conductive film, a combination of a molybdenum (TaN) film as a first conductive film, an aluminum (A1) film as a second conductive film, and a titanium (Ti) film as a third conductive film a molybdenum nitride (TaN) film as a first conductive film, an aluminum (A1) film as a second conductive film and a titanium (Ti) film as a combination of a third conductive film, and a nitrided (TaN) film as a first conductive film The film, the Cu film is used as a combination of the second conductive film and the titanium (Ti) film as the third conductive film. In the present embodiment, a TaN film is formed as a first conductive layer (first conductive film) 908, and a W film is formed as a second conductive layer (second conductive film) 909 (Fig. 7A). Then, an anti-uranium agent mask 910a for forming a gate and a resist mask 910b for forming a secondary line are formed by photomicrodevelopment. The first etching method is performed. The first uranium engraving method is performed under the first and second etching conditions. In the present embodiment, Cla, Ch, and 〇2 are used as etching gases, and the flow rate of each gas is 25/25/10 (seem), by IP at a pressure of IP and a 3.2 W/cm2 of RF (13.56 MHz). At the power, a plasma is generated, whereby the first etching method is performed in the ICP etching apparatus. Further, RF (13.56 MHz) power of 224 mW/cm 2 was transmitted to the substrate side (sample stage), whereby a negative self-bias was applied thereto. The W film is etched under the first etching conditions. Then, CF4 and Cl2 were used as etching gases without removing the resist mask, and the flow rate of each gas was 30/30 (sccm), by IPa pressure and transmitted RF (13.56 MHz) power. , to produce plasma, thus applying the Chinese National Standard (CNS) A4 specification (210X297 mm) on the winter ginseng scale (please read the notes on the back and fill out this page)

-36- 1257688 A7 _______B7 V. DESCRIPTION OF THE INVENTION (d etching is performed under the second etching condition. Further, 20 W of RF (13.56 MHz) power is transmitted to the substrate side (sample stage), whereby a negative self-bias is substantially applied thereto. Due to the first etching method, the conductive layers 911-915 having the first taper are formed. The conductive layers 911-915 are formed to obtain a taper angle of 15°·3 (Γ. In order to perform etching without leaving a residue, Performing an overetch of about 10-20% of the etching time boosting port. Since the selectivity of the yttrium oxide film (gate insulating film 907) to the W film is 2-4 (usually 3), the yttrium oxide film is The exposed surface is etched by over-etching by about 20-5 Onm. An impurity element having one conductivity is added to the semiconductor layers 902-906 by the first doping method. Here, the resist mask 910a is added without removing the resist mask 910a. An n-type impurity element. Using a conductive film 911-915 having a first taper as a mask, impurities are added to a portion of the semiconductor layers 902-906 in a self-aligned manner, thereby forming first n-type impurity regions 916-920. As an n-type impurity element, it belongs to group 15 (usually phosphorus) An element of yttrium or arsenic (As). Here, by ion doping, an n-type impurity is added to the first n-type impurity region 916-920 at a concentration range of lxl 〇 2Q-1 M021 atoms/cm 3 with phosphorus (P). Element (Figure 7Β).

Then, the second etching method is performed without removing the resist mask. The second etching method is performed under the third and fourth etching conditions. CF4 and Cl2 are used as uranium engraving gas, and the flow rate of each gas is 30/30 (sccm), and plasma is generated by IPa pressure and transmitted RF (13.56 MHz) power, thereby utilizing the first uranium engraving The same method is used to perform the second etching method in the ICP etching apparatus. For the base side (sample stage), the 20W winter paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) —-------0. — (Please read the back note and fill out this page)团-37- 1257688 A7 B7 V. INSTRUCTION DESCRIPTION (RF ( 13.56 MHz) power of the silicon, whereby a negative self-bias is applied thereto substantially. Under the third etching condition, a conductive film 92 1 -925 is formed, wherein W The film and the TaN film were etched to the same extent (Fig. 7C). Then, CF4, Ch and 〇2 were used as etching gases without removing the resist mask, by IPa pressure and transmitted RF (13.56). The plasma is generated at a power of MHz), whereby etching is performed under the fourth etching condition. A 20 W RF (13.56 MHz) power was delivered to the substrate side (sample stage), thereby essentially applying a negative self-bias to it. The W film is etched under the fourth etching condition, thereby forming the second shaped conductive film 926-930 (Fig. 7D). In the present embodiment, after all the etching methods for forming the gate are completed, the secondary coil can be formed by etching with a spiral mask. Therefore, the region where the gate is to be formed during the etching is covered with a mask. Further, the spiral mask was formed so that the secondary coil had an outer diameter of 1 mm and an inner diameter of 〇5 mm. However, the shape of the secondary coil is not limited to the circular spiral shape, and can be appropriately determined by those skilled in the art. Further, the number of secondary coils formed on each TFT substrate can be appropriately determined by those skilled in the art together with the driving voltage of the TFT substrate. Further, the method of forming the secondary coil is not limited to the embodiment, and can be determined by those skilled in the art. Then, a second doping method (adding an n-type impurity element to the semiconductor layer by the second shape first conductive film 926a-93 0a) is performed, thereby contacting the channel formation region of the first n-type impurity region 916-920 A second n-type impurity region 933-937 is formed on one side. The concentration of the impurity in the second n-type impurity region was set to 1 Μ 016-1 Μ 019 atoms/cm 3 . In the second doping method, the following paper scale is applied to the Chinese National Standard (CNS) A4 specification (210X29*7 mm) (please read the notes on the back and fill out this page). Order -38- 1257688 A7 ______ B7_ V. INSTRUCTIONS (^ (Please read the precautions on the back side and fill in the page again) Condition: In which the n-type impurity element is added to the semiconductor layer even by the tapered portion of the second-shaped conductive film 9 26a-930a as the first layer In the present specification, the second n-type impurity region overlapping with the second shape conductive film 926a-930a as the first layer is referred to as Lu ("v" means "overlap") region, and does not serve as the first layer. The second n-type impurity region in which the second shape conductive films 926a-930a overlap will be referred to as a Lem (off means "offset") region (Fig. 8A). Then, as shown in Fig. 8B, Formed in the semiconductor layers 902, 905, and 906 of the active layer of the subsequently completed p-channel TFT (the semiconductor layer including the channel formation region and the region to be the source/germanium region to which the high concentration impurity is added) is opposite to the above conductivity Conductive impurity region 939 ( 939a ' 939b), 940 (940a, 940b) and 941 (941a, 941b). The second shape conductive layers 926, 929 and 930 are used as a mask, and a P-type impurity element is added, thereby forming an impurity region in a self-aligned manner. At this time, the entire surfaces of the semiconductor layers 903 and 904 to be the active layers of the n-channel TFTs to be completed later are covered with resist masks 938a and 938b. By ion doping, diborane (B2H6) is used to form p. The impurity regions 939, 940 and 941, the concentration of the p-type impurity elements of the p-type impurity regions 939, 940 and 941 are set to 2M02 () - 2 x 10 2 atoms / cm 3 . Specifically, the P-type impurity regions 930 and 940 are precisely An n-type impurity element is added to 941. However, the concentration of the p-type impurity element in the P-type impurity regions 939, 940, and 941 is 1. 5 - 3 times the concentration of the n-type impurity element. Therefore, for the Ρ-type impurity region 939, 940 and 941 are used as the source and the 汲 region of the ρ-channel TFT. [^ The scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -39- 1257688 A7 ___B7_ V. Invention description (3) Subsequently, as shown in the figure 8C, forming a first interlayer insulation on the second shape conductive layer 926-930 and the gate insulating film The film 942. The first interlayer insulating film 942 may be composed of a laminated film of a tantalum nitride film, a hafnium oxide film, a hafnium oxynitride film, or a combination thereof. In any case, the first interlayer insulating film 942 is composed of an inorganic insulating material. The thickness of the first interlayer insulating film 924 is set to 100 to 200 nm. In the case where a ruthenium oxide film is used as the first interlayer insulating film 942, TEOS and 〇2 are mixed and the reaction density is 40 Pa, the substrate temperature is 300-400° (: and the high frequency (13.561^1^) power density is The discharge is performed at 0.5 to 0.8 W/cm 2 , whereby the first interlayer insulating film 942 is formed by plasma CVD. In the case where the hafnium oxide film is used as the first interlayer insulating film 942, SiH4, N2 and A ruthenium oxynitride film made of NH3 or a ruthenium oxynitride film made of SiH# and N2〇 can be formed by plasma CVD. The film formation conditions in this case are as follows: the reaction pressure is 20-200 Pa, and the substrate temperature is 300-400 ° C, high frequency (60 MHz) power density is 0.1-l. OW / cm 2. As the first interlayer insulating film 942, oxidation, nitridation and hydrogenation by SiHU, N2 〇 and H2 can be used. The tantalum film can also be formed by SiH4 and NH3 by plasma CVD. The n-type or p-type impurity elements added at various concentrations are activated by thermal annealing using an annealing furnace. , can use arc annealing or rapid thermal annealing (RTA) at an oxygen concentration of 1ppm or less (usually O.lppm or lower) The thermal annealing is performed at 400-70 (TC (usually 500-600 ° C) in a nitrogen atmosphere. In this embodiment, heat treatment is performed at 550 ° C for 4 hours. In addition, a plastic substrate having a low heat-resistant temperature is employed. In the case of the substrate 900, laser annealing is preferred. The Chinese standard (CNS) A4 specification (210X297 mm) is applied to this standard. " _ -40- (Please read the note on the back and fill out this page) Clothing order 1257688 A7 ___B7 _ _ V. Invention description (33⁄4 (please read the back note first and then fill in this page) During the above heat treatment, the catalytic element (nickel) used in the method of crystallizing the semiconductor layer is moved (inhalation) In the first n-type impurity region in which the element belonging to Group 15 of the periodic table and having the gettering function (phosphorus in the present embodiment mode) is added at a high concentration, the concentration of the catalytic element in the channel forming region can thereby be lowered. After the start-up method, the atmosphere gas is changed, and heat treatment is performed at 300-450 ° C for 12 hours in an atmosphere containing 3-100% hydrogen, thereby hydrogenating the semiconductor layer. During this method, 1016- in the semiconductor layer The 1018/cm3 suspension bond terminates with thermally excited hydrogen. As another way of hydrogenation, plasma hydrogenation (using hydrogen excited by the plasma) can be performed. In any case, it is desirable to set the defect density in the semiconductor layer to 1016. /cm3 or lower. For this purpose, hydrogen may be added in an amount of about 原子·〇1-〇.1 atomic %. The average thickness of the organic insulating material is 1.0-2. 第二μιη second interlayer insulating film 943 . As the organic resin material, polyimine, acrylic resin, decylamine, polyimide-melamine, BCB (benzocyclobutene) or the like can be used. For example, in the case of using a thermally polymerized polyimide, after the application to the substrate, the second interlayer insulating film 943 is formed by sintering at 300 ° C in a clean furnace. In the case of using an acrylic resin, a 2-liquid type is employed. In this case, the main material is mixed with the curing agent, and then the mixture is applied to the entire surface of the substrate by a spin coater. Then, the obtained substrate was temporarily heated at 80 ° C for 60 seconds on a hot plate, followed by sintering at 250 ° C for 60 minutes in a clean furnace. As described above, the surface is satisfactorily planarized by forming the second interlayer insulating film 943 of the organic insulating material. In addition, the organic resin material is generally applied to the Chinese National Standard (CNS) A4 specification (21〇Χ297 mm) in winter and Zhang scale. -41 - 1257688 A7 _____B7 V. Invention Description (33⁄4 (Please read the back note first and then fill out this page) It has a low dielectric constant and thus can reduce parasitic capacitance. However, the organic resin material is not suitable as a protective film due to its hygroscopic property. Therefore, the organic insulating material can be combined with the ruthenium oxide film formed as the first interlayer insulating film 942. The yttrium oxynitride film or the tantalum nitride film combination is the same as the present embodiment. Further, in the present embodiment, the second interlayer insulating film 943 is made of an organic insulating material. However, the film may also be formed of an inorganic insulating material. The surface thereof is leveled by CMP or the like, and the film thus obtained is used as the second interlayer insulating film 943. Note that the second interlayer insulating film 943 made of an organic insulating material generates moisture in some cases. And gas. It is known that the light-emitting element may be degraded by moisture and gas (oxygen). Due to the heat generated by the light-emitting element, the use of an organic resin insulating film in the intermediate layer is practically employed. In the case of the film obtained by the film, since the moisture and the gas are generated from the organic resin insulating film, the light emitting element may be degraded by moisture and gas. To avoid this phenomenon, the second interlayer insulating film formed of the organic insulating material An insulating film 944 is formed over 943. The insulating film 944 is made of a hafnium oxide film, a hafnium oxynitride film, a tantalum nitride film, etc. The insulating film 944 can be formed by sputtering or plasma CVD. The insulating film 944 can also form a contact. After the holes are formed, a resist mask having a predetermined pattern is formed, and contact holes are formed to reach an impurity region to be formed as a source region or a germanium region in each of the semiconductor layers. The contact holes are formed by dry etching. Then, a conductive metal film is formed by sputtering or vacuum vapor deposition, patterned with a mask, and then etched, thereby forming wirings 945-952. Although not shown in the drawings, in the present embodiment, each Wiring 945-952 is based on Ti film (thickness 50nm) and alloy (A1 and Ti) film (thickness 500nm). This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) (3) -42 - 1257688 A7 ___ B7 __ five DESCRIPTION OF THE INVENTION (43⁄4 laminated film is formed. (Please read the back of the note before filling this page) A transparent conductive film with a thickness of 80 - 1 20nm is formed on the wiring, and uranium is engraved to form a pixel electrode (anode) 953 (Fig. 9A) In the present embodiment, as the transparent conductive film, an indium tin oxide (ITO) film or a transparent conductive film in which zinc oxide (ZnO) and 2-20% of indium oxide are mixed is used. Further, the anode 95 3 and the drain electrode The wiring 950 is superposed to be in contact therewith, thereby being electrically connected to the crotch region of the current controlling TFT. Here, the anode 95 3 may be heat-treated at 180-350 °C. Next, as shown in Fig. 9B, an organic insulating film 954 is formed on the anode 953. At this time, in order to prevent the array substrate including the TFT thereon from being damaged or contaminated by dust in the air, an ultra-thin film (hereinafter referred to as "antistatic film") 955 having an antistatic function is formed on the organic insulating film 954. The antistatic film 955 is made of a known material which can be removed by water rinsing (Fig. 9C). In this example, an antistatic film 955 is formed using staticide (manufactured by ACL). Then, detection is performed to determine the quality of the TFT on the array substrate thus produced (the suitability of the TFT substrate for the product). The material of the light-emitting element is expensive. Therefore, in terms of manufacturing cost, it is undesirable to form a light-emitting element on a TFT substrate which cannot be transported as a part. In order to identify a TFT substrate that cannot be normally driven or transmitted, a detection method is incorporated. The detection method described in the above embodiment mode 1 or 2 can be employed. After the TFT substrate was transferred to a processing chamber (clean space) for forming a light-emitting element, the antistatic film 955 was removed by rinsing with water. Then, the paper size is etched to the Chinese National Standard (CNS) A4 specification (210X297 mm) ... -43- 1257688 A7 _B7___ V. Description of the invention ((Please read the note on the back and fill in the page) Organic Insulation Film 954 A bank 956 having an opening at a position corresponding to a pixel (light-emitting element) is formed. In this example, the bank 956 is formed of a resist. In this example, the thickness of the bank 956 is set to about Mm, and the wiring is covered. The area of the embankment 956 in the portion where the anode is in contact is tapered (Fig. 1A). In this example, although the embankment 956 is composed of an anti-uranium film, in some cases, polyimine may be used. a guanamine, an acrylic resin, a BCB (benzocyclobutene) or a ruthenium oxide film. The embankment 95 6 may be formed of an organic substance or an inorganic substance, as long as it is an insulating substance. In the case of forming a bank 956 with a photosensitive acrylic resin, Preferably, the photosensitive acrylic resin is etched and heat-treated at 180-350 ° C. In the case of forming the bank 956 with a non-photosensitive acrylic film, it is preferably heat-treated at 180-350 ° C and etched to form a bank. The surface of the anode was subjected to a scrubbing treatment. In this example, the surface of the anode 953 was washed with Bellclean 961 (manufactured by 〇dzu Sangyo), thereby leveling the surface of the anode 95 3 and removing dust attached thereto. The lotion is made of pure water. The number of rotations of the shaft surrounded by Bellclean is set to 100-300 rpm, and the push enthalpy is set to 0.1-1.0 mm (Fig. 10A). Then, an insulating film covering the embankment 956 and the anode 953 is formed. 957. As the insulating film 957, an organic resin film made of polyimine, guanamine, or polyimine-melamine having a thickness of 1 to 5 nm is formed by spin coating, vapor deposition, or sputtering. The insulating film 957 thus formed can cover cracks and the like on the surface of the anode 95 3 , thereby preventing degradation of the light-emitting element. The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) _44· 1257688 A7 B7 V. Description of the invention (Wraps (please read the back note first and then fill in this page) Thereafter, the array substrate is divided into a plurality of TFT substrates by a known method. At this time, preferably, it is formed outside the TFT substrate region to be a product. In detection The secondary winding, the rectifier circuit, and the waveform shaping circuit of the transformer in the method are electrically and physically separated. In this example, the secondary coil, the rectifier circuit, and the waveform shaping circuit of the transformer are formed outside the region of the TFT substrate to be the product. However, the position at which these elements are formed can be appropriately determined by those skilled in the art, and is not limited to the embodiment. Thereafter, the organic compound layer 958 and the cathode are formed by vapor deposition on the insulating film 957 of the TFT substrate which can be used as a product. 959. In this example, as the cathode of the light-emitting element, an MgAg electrode is used; however, other known materials may be used. The organic compound layer 958 is formed by stacking a combination of a plurality of layers including not only a light-emitting layer but also a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. The configuration of the organic compound layer 95 8 used in this example will be described in detail below. In this example, a hole injection layer was formed from copper cyanine by vapor deposition, and a hole transport layer was formed by a-NPD. Then, a light-emitting layer is formed. In this example, different materials are used for the luminescent layer to form an organic compound layer exhibiting different light emission. In this example, an organic compound layer exhibiting red, green, and blue light emission is formed. Since vapor deposition is used for film formation in any case, a light-emitting layer is formed by using a material which changes according to a pixel, and a metal mask is used in forming a film. A light-emitting layer that emits red light is formed using A1Q3 doped with DCM. In addition, it is possible to use Eu complex (1,10-phenanthroline) tris(1,3-diphenylpropane-1,3, diacid) ruthenium (III) (Eu(DBM) 3 (Phen) doped Miscellaneous (N, N, bound Zhang scale applicable Chinese National Standard (CNS) A4 specification (210X297 mm) What vf -45- 1257688 A7 ______B7 V. Description of invention (d disalicylidene-l, 6 hexane diaminization) Zinc (n) (Zn (salhn)), etc. Other known materials can also be used. (Please read the note on the back and fill out this page.) The green light emitting layer can be made by CBP and Ir(PPy)3. Co-vapor deposition is formed. In this case, a BCP stacked hole barrier layer is preferably used. Further, an aluminoquinolto complex (Alq3) or a benzoquinolinate ruthenium complex may be used. (BeBq). And 'a quinolinolato aluminum complex (Alq3) using a material such as coumarin 6 or Quinacridone as a dopant may be used, and other known materials may be used. Further, as the blue light-emitting layer, DPVBi as a distyrene derivative can be used as a ligand having an azocarbazone compound. (N,N'-disalicylidene-l,6 hexanediaminate) Zinc(II)(Zn(salhn)) and 4,4'-double (2,2- doped with phenanthrene) Diphenyl-vinyl)-biphenyl (DPVBi). However, other known materials may be used to form an electron transport layer. As the electron transport layer, a derivative such as 1,3,4-oxadiazole may be used. 1,2,4-triazole derivative (TAZ), etc. In this example, the electron transport layer is formed by vapor phase deposition of a 1,2,4-triazole derivative (TAZ) and has a thickness of 30 - 60 nm. As described above, an organic compound layer having a laminated structure is formed. In this example, the thickness of the organic compound layer 958 is set to 10 - 400 nm (typically 60 - 150 nm), and the thickness of the cathode 959 is set to 80 - 200 nm. (usually 100-150nm) 〇 After the formation of the organic compound layer, the luminescence name is formed by gas phase ablation. The Chinese National Standard (CNS) A4 specification (210X297 mm) -46- 1257688 A7 B7 DESCRIPTION OF THE INVENTION (4 (Please read the precautions on the back side and fill out this page). In this example, as a conductive film to be a cathode of a light-emitting element MgAg is used. However, it is also possible to use an Al-Li alloy film (an alloy film of aluminum and lithium) or a film formed by co-vapor deposition of an element belonging to Group 1 or 2 of the periodic table and aluminum as a conductive film. Thus, the light-emitting device having the configuration as shown in Fig. 10B is completed. A portion 960 in which the anode 953, the organic compound layer 95 8 and the cathode 959 are stacked on each other at the top is referred to as a light-emitting element. The P-channel TFT 1000 and the n-channel TFT 1001 are TFTs of the driving circuit 102, which constitute a CMOS. The switching TFT 1002 and the current controlling TFT 1003 are TFTs of the pixel portion 103, and the TFT of the driving circuit 201 and the TFT of the pixel portion 103 can be formed on the same substrate. In the case of a light-emitting device using a light-emitting element, the power supply voltage of the driving circuit is about 5 V - 6 V (maximum about 10 V), so that the TFT is not likely to be degraded by hot electrons. In this example, an example of a secondary coil of a transformer used in the detecting method formed on the TFT substrate (TFT element substrate) of the light-emitting device has been described. The present embodiment is not limited to the light-emitting device, and a secondary coil for applying the present invention to a transformer of a semiconductor device composed of a semiconductor element such as a liquid crystal display device may be formed. Embodiment 2 In Embodiment 2, the same method as in Embodiment 1 is performed to form a second interlayer insulating film 943, and instead of forming the insulating film 924 in the embodiment, the second interlayer insulating film 9 is formed. 4 3 Perform plasma treatment to trim the first hot-sheet standard Applicable to China National Standard (CNS) A4 specification (210X297 mm): " -47 - 1257688 A7 B7 V. Invention Description (扃二层层膜膜943 Surface This method is described below with reference to Figures 11 - 13. (Please read the note on the back and fill out this page) For example, selected from hydrogen, nitrogen, hydrocarbons, halocarbons, hydrogen fluoride and rare gases (Ar, The second interlayer insulating film 943 is subjected to a plasma treatment in one or more gases of the group of He, Ne, etc., thereby forming a new coating film on the surface of the second interlayer insulating film 943. The kind of the functional group on the surface is changed. Thus, the surface of the second interlayer insulating film 943 can be trimmed. On the surface of the second interlayer insulating film 943, a dense film 943B is formed, as shown in Fig. 11. In the specification, the membrane 943B is called The film 943B is thus 'prevented from releasing the gas and moisture from the organic resin film. Further, in this example, the anode (ITO) is formed after trimming the surface of the second interlayer insulating film 943 to prevent the heat treatment from having different coefficients of thermal expansion. The materials are subjected to direct contact with each other. Therefore, cracks or the like of the IT defects can be prevented, which prevents degradation of the light-emitting elements. The second interlayer insulating film 943 can be subjected to plasma treatment before or after the formation of the contact holes. The surface of the interlayer insulating film 943 made of an organic insulating material is electrically formed in one or more gases of a group consisting of free hydrogen, nitrogen, hydrocarbons, halocarbons, hydrogen fluoride, and rare gases (Ar, He, Ne, etc.) The slurry treatment forms a cured film 943B. Therefore, the cured film 943B contains a gas element of hydrogen, nitrogen, a hydrocarbon, a halogenated carbon, hydrogen fluoride or a rare gas (Ar, He, Ne, etc.). As shown in Fig. 12, the method is carried out in the same manner as in the embodiment 1, to form the second interlayer insulating film 943, and the stripping scale is applied to the Chinese national standard (CNS). A4 size (210X297 mm) -48- 1257688 A7 B7 V. Description of the invention (Diamond-like carbon (DCL) film 943C is formed as an insulating film 944 on the second interlayer insulating film 943. (Please read the back side first) Precautions Refill this page) The DLC film has an asymmetric peak at about 1 550 cm, and a Raman spectral distribution with a shoulder at about 1 300 cnT1. In addition, the DLC film exhibits when measured with a microhardness tester. -25 Gpa hardness and excellent in chemical resistance. Moreover, the DLC film can be formed by CVD or sputtering at a temperature ranging from room temperature to 100 °C. As the film formation method, sputtering, ECR plasma CVD, high frequency plasma CVD, or ion beam vapor deposition may be employed, and the thickness may be about 5 to 50 nm. As still another example, as shown in FIG. 13, the next step is to perform the method in the same manner as in Embodiment 1 to form the second interlayer insulating film 943; to form the cured film 943B by plasma treatment, and to trim the second The surface of the interlayer insulating film 943; thereafter, a DLC film 943C is formed on the cured film 943B. The DLC film 943C can be formed to have a thickness of about 5 to 50 nm by sputtering 3, ECR plasma CVD, high frequency plasma CVD or ion beam vapor deposition. Embodiment 3 In Embodiment 3, use with Example 1 The method is performed in the same manner to form the embankment 956, and the surface of the embankment 956 is subjected to plasma treatment, thereby trimming the surface of the embankment 956. This will be explained with reference to FIG. The embankment 956 is formed of an organic resin insulating film and has problems of generating moisture and gas. The embankment 95 6 may generate moisture and gas due to heat generated when the light-emitting device is actually used.杳Cold sheet size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -49- 1257688 A7 B7 V. Invention description (4> In order to overcome this problem, after heat treatment, plasma treatment is carried out to repair the embankment 9 5 6 The surface is as shown in Fig. 14. The plasma treatment is carried out in one or more gases selected from the group consisting of hydrogen, nitrogen, halocarbon, hydrogen fluoride and a rare gas. For the above reasons, the surface of the embankment 956 is made dense, and The cured film 956b containing one or more gas elements selected from the group consisting of hydrogen, nitrogen, a halogenated carbon, hydrogen fluoride, and a rare gas is formed to prevent generation of moisture and gas (oxygen) from the inside, thereby preventing degradation of the light-emitting element. This embodiment can be Any combination of Embodiments 1-4. Embodiment 4 The present invention is applicable to a TFT of any shape. In the present embodiment, a method of manufacturing a light-emitting device in which a bottom gate type TFT is formed will be referred to Figs. 15A-15C and 16A-16C. The bottom insulating film 51 is formed on the array substrate 50 from a material selected from the group consisting of a hafnium oxide film, a hafnium nitride film, and a hafnium oxynitride film, formed of a selected from the group consisting of Ta, Ti, W, Mo, Ci:, and A1. The element is made of or mainly contains a conductive film of any of the elements, and is patterned into a desired shape to obtain a gate 52. Then, a gate insulating film 53 having a hafnium oxide film, a hafnium nitride film or A single layer structure of a ruthenium oxynitride film or a multilayer structure of any of these films. Then, an amorphous ruthenium film having a thickness of 10 to 50 nm is formed as an amorphous semiconductor film by a known method, a gate insulating film 53 and an amorphous film. The ruthenium film can be formed by the same film formation method, so that they can be formed continuously. By continuously forming these films, they can be formed without being exposed to the atmosphere gas, thereby preventing the scale of the watch from being applied to the Chinese national standard (CNS). A4 size (210X297 mm) (Please read the note on the back and fill out this page)

-50 - 1257688 A7 ____B7_ V. INSTRUCTIONS (& face is contaminated and reduces the change in TFT characteristics to be produced and the chopping of the critical 値 voltage. (Please read the note on the back and fill out this page) Then The amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film 54. The crystallization method can be carried out by laser, heat treatment or a combination thereof. After the crystallization method, a thickness of 10 Å to 400 nm is formed and the crystallization film is protected in a subsequent method of adding impurities ( An insulating film (not shown) of the channel formation region. The insulating film is formed to prevent direct exposure of the crystallization film to the plasma during the impurity element addition method and to precisely control the concentration of the impurity element. The mask adds an n-type impurity element to the crystal ruthenium film to be the active layer of the later TFT and forms a source/germanium region 55 of the TFT. Subsequently, the impurity element added to the crystallization ruthenium film is started. In the case of performing the crystallization method Using a catalytic element, the catalytic element applied to the crystalline ruthenium film can be inhaled in the same manner as the startup method. The atmosphere used for the heat treatment can be The insulating film on the crystalline ruthenium film is removed by evacuation by a rotary pump or a mechanical booster pump. Then, the crystallization film is patterned into a desired shape. Thereafter, an insulating film 56 is formed. An inorganic insulating film such as a ruthenium oxide film, a tantalum nitride film, a ruthenium oxynitride film, or the like, or a polyphthalimide, an acrylic resin, a guanamine, a polyimide, a guanamine, an epoxy resin, and a BCB (benzo The organic resin material of cyclobutene) is formed. Subsequently, contact holes reaching the source/germanium regions of the respective TFTs are formed, and wirings 57 for electrically connecting each of the TFTs are formed of aluminum or a conductive film mainly containing aluminum. Then, The interlayer insulating film 58 covering the wiring 57 is formed. The interlayer insulating film 58 may be made of an inorganic insulating film such as a yttrium oxide film, a tantalum nitride film, and a Qinshen scale applicable to the Chinese National Standard (CNS) A4 specification (21 〇Χ; 297 gong) PCT) -51 - 1257688 A7 _ ___B7_ V. Description of invention (43⁄4 (please read the note on the back and fill out this page) yttrium oxynitride film, or selected from polyimine, acrylic resin, guanamine, poly Amine, decylamine, epoxy resin and BCB (benzo ring) The organic resin material of the olefin is formed. Then, the pixel electrode 59 to be the anode of the light-emitting element is formed of a conductive film. As the conductive film, a metal selected from the group consisting of chromium, molybdenum, tungsten, giant, and germanium can be used (Fig. A) Thereafter, an organic insulating film 60 for forming a bank (in the present specification, an insulating film having an opening on the pixel electrode and formed to cover the end of the pixel electrode is referred to as a bank) is formed (FIG. 15B). And an antistatic film 61 for antistatic function is formed on the organic insulating film 60. The antistatic film 61 is formed to prevent dust from adhering to the TFT substrate during the subsequent detecting method. Then, a detecting method is performed to detect The operation of the TFTs formed on the array substrate determines whether the TFT is suitable for the product. The detection method described in Embodiment Mode 1 or 2 can be employed. After the detection method is completed, the antistatic film 61 is removed by rinsing with water or the like, and the organic insulating film 60 is etched to form the embankment 62 (Fig. 15C). In the above detection method, the organic compound layer 63 and the cathode 64 are formed on the TFT substrate which is determined to be suitable for the product. The organic compound layer 63 is formed by stacking a combination of a plurality of layers including a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, and a light-emitting layer. The thickness of the organic compound layer 63 is preferably about 10 to 400 nm (Fig. 16 A). The cathode 64 is formed after the organic compound layer 63 is formed. Cathode 64-Qin paper scale applicable to China National Standard (CNS) A4 specification (210X297 mm) ή -52- 1257688 A7 B7 V. Invention description (Please read the back note first and then fill in this page) A structure in which an ultrathin (20 nm or less) cathode 64a is formed as a first layer with MgAg or an Al-Li alloy (an alloy of aluminum and lithium), and a transparent conductive film 64b having a thickness of 80 to 200 nm is formed on the cathode 64a (FIG. 16B) Then, a protective film 65 is formed so as to cover the embankment 62 and the cathode 64. The protective film 65 may be formed of any one of a DLC film, a hafnium oxide film, or a tantalum nitride film, and the film is formed to contain Ar (Fig. 16C). The light-emitting device can be manufactured by using a plurality of TFT substrates formed on an array substrate. Embodiment 5 In Embodiment 5, the concentration of a catalytic element in the obtained crystalline semiconductor film by using a catalytic element and reducing will be described. A method of crystallizing a semiconductor film to be an active layer of a TFT. In Fig. 24A, the substrate 1100 is preferably made of barium borosilicate glass, aluminum borosilicate glass or quartz. The thickness is formed on the surface of the substrate 100. 10-200nm inorganic An insulating film is used as the underlying insulating film 1101. A preferred example of the underlying insulating film 1101 is a hafnium oxynitride film formed by plasma CVD. By forming a first hafnium oxynitride film made of SiH4, NH3, and N2 lanthanum 〇 ia (thickness: 50 nm), and forming a second yttrium oxynitride film 1101b (thickness of 100 nm) made of SiH4 and N2 yt, thereby obtaining a bottom insulating film 1101. Providing a bottom insulating film 1101 (1101a, 1101b) is In order to prevent the alkali metal contained in the array substrate from diffusing into the semiconductor film to be formed in the upper layer. In the case of using a quartz substrate, the bottom insulating film 1101 can be omitted. The Qin scale scale is applicable to the Chinese National Standard (CNS) A4 specification. (210X297 mm) V·* -53- 1257688 A7 B7 V. Inventive Note (5) (Please read the note on the back side and fill in this page) Subsequently, a tantalum nitride film 1102 is formed on the bottom insulating film 1101. The tantalum nitride film 1102 is for preventing the catalytic element (usually nickel) used in the subsequent semiconductor film crystallization method from being absorbed on the underlying insulating film 1101, and also preventing the oxygen contained in the bottom insulating film 1101 from having a side surface effect. The ruthenium film 1102 can be made of plasma The CVD is formed to have a thickness of 1 to 5 nm. Then, an amorphous semiconductor film 1103 is formed on the tantalum nitride film 1102. A semiconductor material mainly containing germanium is used for the amorphous semiconductor film 1102. Usually, an amorphous germanium film, an amorphous germanium The ruthenium film or the like is applied to the amorphous semiconductor film 101 and formed to have a thickness of 10 to 100 nm by plasma CVD, reduced pressure CVD or sputtering. In order to obtain a high quality crystal, it is contained in the amorphous semiconductor film 11 03 The concentration of impurities such as oxygen and nitrogen can be reduced to 5xl018/cm3 or less. These impurities hinder the crystallization of the amorphous semiconductor and, in addition, increase the density of the trapping center and the recombination center after crystallization. Therefore, it is desirable to use not only a high-purity material gas but also a CVD apparatus designed for ultra-high vacuum and provided with a mirror surface treatment (field polishing treatment) system and an oil-free vacuum exhaust system in a reaction chamber. The film including the underlying insulating film 1101 to the amorphous semiconductor film (amorphous germanium film 1103) can be continuously formed without being exposed to the atmosphere. Thereafter, a metal element having a catalytic function of promoting crystallization is added to the surface of the amorphous ruthenium film 1103 (Fig. 24B). The metal element having a catalytic function of promoting crystallization of the semiconductor film includes iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), hungry (〇s), ruthenium (Ir), platinum (Pt), copper (Cu), gold (Au), and the like. One or more metal elements selected from these examples may be employed. Nickel is usually used. Using the spin coater #张尺寸Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -54 - 1257688 A7 B7 V. Invention Description (5^ Applying nickel acetate solution containing 1-100 ppm by weight of nickel to amorphous On the surface of the ruthenium film 1103, a catalyst-containing layer 1104 is formed. In this case, in order to more easily apply a solution to the surface of the amorphous ruthenium film 1103, the amorphous ruthenium film 1103 is surface-treated. More specifically, The ozone aqueous solution forms an ultrathin oxide film, and the oxide film is etched with a mixed solution containing a hydrofluoric acid and a hydrogen peroxide solution to form a clean surface. Thereafter, the obtained surface is treated with an aqueous solution containing ozone to form an ultrathin oxide film. The surface of the semiconductor film made of ruthenium or the like is originally hydrophobic; therefore, by forming such an oxide film, a nickel acetate solution can be uniformly applied. Needless to say, the method of forming the catalyst-containing layer Π04 is not limited to the method. The catalyst-containing layer 11 04 can be formed by sputtering, vapor deposition, plasma treatment, etc., and the heat treatment for crystallization is performed under the condition that the amorphous germanium film 1103 is in contact with the catalyst-containing layer 1104. As a method of heat treatment, furnace annealing using an electric furnace or RTA (rapid thermal annealing) using a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, a high pressure mercury lamp, or the like is performed for RTA. In the case of the lamp, the lamp source for heating is ignited for 1-60 seconds (preferably 30-60 seconds), and the cycle is repeated 1-10 times (preferably 2-6 times). The luminous intensity of the lamp source can utilize the semiconductor film. It is arbitrarily determined by rapid heating to about 600 - 1 Torr (TC, preferably 650-750 ° C. Even at such a high temperature, the semiconductor film is only rapidly heated, and the substrate 1100 is not deformed by strain. The amorphous semiconductor film is crystallized to obtain a crystalline germanium film 1 105 as shown in Fig. 24C. The amorphous semiconductor film cannot be applied to the Chinese National Standard (CNS) A4 specification (210×297 mm) by this miscellaneous scale. Read the precautions on the back and fill out this page.) Order -55 - 1257688 A7 __B7_ V. Description of the invention (d treatment of crystallization unless a catalyst layer 1104 is formed. (Please read the note on the back before refilling this page) Annealing as another In the case of the method, before the heat treatment for crystallization, heat treatment is performed at 500 ° C for about 1 hour in advance to release hydrogen contained in the amorphous ruthenium film 1103. Then, an electric furnace is used in a nitrogen atmosphere at 550- The heat treatment for crystallization is carried out at 600 ° C, preferably 580 ° C, whereby the amorphous ruthenium film 1103 is crystallized. Thus, a crystallized film 1105 as shown in Fig. 24C is formed. Further, in order to increase the crystallization ratio (in It is also effective to illuminate the crystalline ruthenium film 1105 by laser irradiation by correcting the defects remaining in the crystal grains in the ratio of the crystal components in the entire film volume. In the thus obtained crystalline ruthenium film 1105, the catalytic element (here, nickel) was maintained at an average concentration exceeding lx 1019 / cm3. The remaining catalytic elements have a detrimental effect on the characteristics of the TFT. Therefore, it is required to lower the concentration of the catalytic element in the semiconductor film. A method of reducing the concentration of the catalytic element in the semiconductor film after the crystallization method will be explained below. First, as shown in Fig. 24D, a thin layer 1106 is formed on the surface of the crystalline ruthenium film 1105. In the present specification, the thin layer 1106 formed on the crystalline tantalum film 1105 is provided to prevent the crystalline tantalum film 1105 from being etched when the gettering portion is later removed, and is referred to as a barrier layer 1106. The barrier layer 1106 is formed to have a thickness of about 1 to 1 nm. The crystalline ruthenium film 1105 is treated with ozone water in a simple manner to form a chemical oxide as a barrier layer. Alternatively, a chemical oxide is formed similarly even when the crystalline ruthenium film is treated with an aqueous solution in which a hydrogen peroxide solution is mixed with sulfuric acid, hydrochloric acid, nitric acid or the like. As another method, the Chinese National Standard (CNS) A4 specification (210X297 mm) can be applied by the plasma in the oxygen atmosphere. -56- 1257688 A7 B7 V. Invention Description (Please read the back first Precautions for refilling this page) Ozone is generated by irradiation with ultraviolet light in an atmosphere containing oxygen, thereby oxidizing the crystalline ruthenium film 1105. Alternatively, crystallization is carried out by heating at about 200-350 ° C in a clean oven. The film 1105 is formed as a thin oxide film as the barrier layer 1106. Alternatively, an oxide film having a thickness of about 1 to 5 nm may be deposited by plasma CVD, sputtering or vapor deposition to form a barrier layer. In this case, it is possible to prevent the catalyst element from moving to the gettering portion during inhalation, and to prevent the etchant from penetrating into the crystalline tantalum film 1105 (i.e., to protect the crystalline tantalum film 1105 from contacting the etchant) when the gettering portion is removed. A chemical oxide film, a ruthenium oxide film (Si〇x) or a porous film formed by treatment with ozone water may be used. Then, as the gettering portion 1107, the thickness on the barrier layer 1106 is 25-250 nm by sputtering. Containing a concentration of lxl 〇 2 ° / cm 3 The second semiconductor film (usually an amorphous germanium film) of the above rare gas element. In order to increase the etching selectivity with respect to the crystalline germanium film 105, it is preferable to form the getter portion 1107 which has a low density and which is to be removed later. The rare gas element itself is inactive in the semiconductor film and thus does not adversely affect the crystalline ruthenium film 1105. As a rare gas element, it is selected from the group consisting of ruthenium (He), neon (Ne), argon (Ar), and ruthenium ( One or more elements of Kr), Xe. The present invention is characterized in that these rare gas elements are used as an ion source forming a gettering portion, and a semiconductor film containing these elements is formed to obtain an inhalation portion. The gas needs to be heat-treated later. The heat treatment is carried out by furnace annealing or RTA. In the case of furnace annealing, heat treatment is carried out at 450-600 ° C for 0.5-12 hours in a nitrogen atmosphere. The scale applies to China National Standard (CNS) A4 specification (210X297 public celebration) -57- 1257688 A7 B7 V. Invention description ((Please read the note on the back and then fill in this page) With RTA Next, the lamp source for heating is ignited for 60 seconds (preferably 30-60 seconds), and the cycle is repeated 1-10 times (preferably 2-6 times). The semiconductor film can be rapidly heated to about 60. (M〇〇〇°C, preferably about 700-7 50° C. The illuminating intensity of the lamp source is arbitrarily determined. Due to the inhalation, the catalytic element in the region to be inhaled (capture portion) is released by heat. And moving to the gettering portion by diffusion. Therefore, the gettering depends on the processing temperature, and when the temperature is high, it can be carried out in a shorter time. According to the present invention, the distance at which the catalytic element moves during inhalation is about a semiconductor. The thickness of the film, whereby the inhalation can be completed in a relatively short time (Fig. 24E). Even with the above heat treatment, the semiconductor film 1107 containing a rare gas having a concentration of lxl019 / cm3 - lM021 / cm3, preferably lxl 〇 2 ° / cm3 - lxl021 / cm3, more preferably 5 M02 () / cm3 does not crystallize. The reason is as follows: in the case where it is not released even in the above-described processing temperature range, the rare gas element remains in the semiconductor film 1107, thereby preventing the crystallization of the semiconductor film 1 107. After the gettering method, the etched getter portion 1 1 07 is selected to remove the portion. As the etching method, wet etching using C1F3 without using a plasma or wet etching using an aqueous solution such as an aqueous solution containing hydrazine and tetraethylammonium hydroxide ((CH〇4N〇H)) may be performed. The barrier layer 1106 is used as an etch stop layer. Further, the barrier layer 1106 may be removed by hydrofluoric acid. Thus, as shown in Fig. 24F, a crystalline ruthenium film 11 〇 8 having a catalytic element concentration reduced to 1 M017/cm 3 or less can be obtained. The crystallization film obtained in this way is suitable for the Chinese National Standard (CNS) A4 specification (210X297 mm) ... -58- 1257688 A7 __B7 V. Invention description (5έ (Please read the back note first and then fill in this page) 1108 is formed into a thin rod-like or thin strip-like crystal due to the function of the catalytic element, and each crystal grows in a specific direction when viewed from a macroscopic perspective. This embodiment can be implemented with modes 1 and 2, and Example 1 - 5 Combination Example 6 In this example, a light-emitting panel manufactured by the manufacturing steps of the combination of Examples 1-5 as shown in Fig. 10B will be specifically described below as a light-emitting device with reference to Figs. 1 Α and 17 Β. The method of completion. 17A is a top view of a light-emitting panel in which the TFT substrate is hermetically sealed, and FIG. 17B is a cross-sectional view taken along line AA' of FIG. 17A. Reference numeral 80 1 denotes a source-side driving circuit and is indicated by a broken line; Reference numeral 802 denotes a pixel portion; reference numeral 803 denotes a gate side driving circuit: reference numeral 804 denotes a sealing substrate; and reference numeral 805 denotes a sealant. The inside surrounded by the sealing agent 805 is a space 807. For transmitting an input to the source The punch-through wiring (not shown) of the signal, video signal or clock signal of the side driver circuit 801 and the gate side driver circuit 803 is received from a flexible printed circuit (FPC) 809 as an external input terminal. Here, the FPC is connected to the light-emitting panel. In this specification, any component that directly mounts integrated circuits (ICs) by FPC is called a light-emitting device.

Referring to Fig. 17B, a partial structure of the light-emitting panel shown in Fig. 17A will be described below. The pixel portion 802 and the driver circuit portion are formed on the substrate 810. The pixel portion 802 is composed of pixels, each of which contains a current control TFT, and the paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) -59-1257688 A7 B7 5. Invention Description (5} 8 11 And an anode 8 1 2 electrically connected to the drain of the current controlling TFT 8 11. The driving circuit portion is constituted by a CMOS circuit in which the n-channel TFT 813 and the p-channel TFT 814 are combined with each other. On both sides of each anode 8 1 2 The embankment 8 15 is formed. Thereafter, an insulating film 82 1 , an organic compound layer 8 16 and a cathode 8 1 7 are formed on the anode 8 1 2 to form a light-emitting element 8 1 8 . The cathode 8 1 7 is used for all the pixels. The wiring is electrically connected to the FPC 809 by a connection wiring 808. The sealing substrate 804 made of glass is bonded to the substrate 810 with a sealant 805. As the sealing agent 805, an ultraviolet curing resin or a thermosetting resin is preferably used. It is necessary to provide a separator composed of a resin film in order to maintain a space between the sealing substrate 804 and the light-emitting element 818. An inert gas such as nitrogen or a rare gas is charged into the space 807 surrounded by the sealant 805. Agent 805 by water or oxygen The material is made of a material that is as small as possible. By placing the light-emitting element airtightly in the space 807 of the above structure, the light-emitting element can be isolated from the outside. As a result, it is possible to prevent the light-emitting element from entering water or oxygen from the outside. Further, it is possible to manufacture a light-emitting device having high reliability. The structure of this embodiment can be realized by implementing the configurations of modes 1, 2 and 1-5 in any combination.

Fig. 18A more specifically shows the top surface structure of the pixel portion of the light-emitting device manufactured by the present invention, and Fig. 18B shows the circuit diagram thereof. Refer to Figure 18A. 3 Winter Takeup Scale Applicable to China National Standard (CNS) A4 Specification (210X297 mm) (Please read the note on the back and fill out this page)

-60- 1257688 A7 B7 _ V. Inventive Note (53⁄4 (please read the precautions on the back side to fill out this page) and 18B, the switching TFT 704 is composed of the switch (n-channel) TFT 1002 shown in Fig. 10B. Regarding the structure, reference should be made to the description about the switch (n-channel) TFT 1002. The wiring 703 is a gate wiring for electrically connecting the gates 704a and 704b of the switching TFT 704 to each other. In this example, two of them are formed therein. The double gate structure of the channel formation region. However, a single gate structure forming one channel formation region or a triple gate structure forming three channel formation regions may be employed. The source of the switching TFT 704 is connected to the source wiring 715, and the drain is The drain wiring 705 is connected. The drain wiring 705 is electrically connected to the gate 707 of the current controlling TFT 706. The current controlling TFT 706 is constituted by the current controlling (P channel) TFT 1003 in Fig. 10B. Therefore, regarding its structure, reference should be made to Description of the switch (P channel) TFT 1 003. In this example, a single gate structure is employed. However, a double gate structure or a triple gate structure may also be employed. The source of the current control TFT 706 is electrically connected to the current supply line 716. The drain is electrically connected to the drain connection 717. The drain connection 717 is electrically connected to the anode (pixel element) 718, shown in phantom. In this case, a storage is formed in the area indicated by reference numeral 719. Capacitor (capacitance) The capacitor 7 19 is formed by a semiconductor film 720 electrically connected to the current supply line 716, an insulating film (not shown) formed of the same layer as the gate insulating film, and a gate 707. A gate 707, a capacitor formed of a layer (not shown) which is the same layer as the first interlayer insulating film, and a current supply line 716 can be used to store the storage capacitor. The structure of this example can be achieved by implementing mode 1 and 2 and Embodiment 1 -6 can be achieved by any combination. - This paper scale applies Chinese National Standard (CNS) A4 specification (210X297 mm) -61 - 1257688 A7 _ B7 _ V. Invention description (5^ Example 8 display Examples of electronic devices using the light-emitting device manufactured by the present invention are as follows: video camera; digital camera; goggle-type display (head mounted display): navigation system; sound reproduction device (car audio, sound component, etc.); Computer; game machine; portable information terminal (portable computer, mobile phone, portable game machine, e-book, etc.); image reproduction device (specifically: capable of processing data in a recording medium such as a digital versatile disk (DVD) and A device having a display device capable of displaying a data image. A light-emitting device having a light-emitting element is particularly desirable for a portable information terminal because its screen is usually viewed obliquely and needs to have a wide viewing angle. Specific examples of the electronic device are shown in Figures 19A-19H. Fig. 19A shows a display device which is constituted by a case 2001, a holder 2002, a display unit 2003, a speaker unit 2004, a video input unit 2005, and the like. The light-emitting device of the present invention can be used for the display unit 2003. The light-emitting device having the light-emitting element is self-illuminating and does not require background light, so that it can be made thinner than the liquid crystal display device. Such a display device includes each display device for displaying information such as for a personal computer, for receiving a TV broadcast, and for advertising. Fig. 19B shows a digital still camera which is composed of a main body 2101, a display unit 2102, an image receiving unit 2103, operation keys 2104, an external port 2105, a shutter 2106, and the like. A light-emitting device formed by employing the present invention can be used for the display unit 2102. Fig. 19C shows a laptop computer which is applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) by the body 2201, the shell 2202, and the winter scale. (Please read the back note first and then fill in the page) • P, etc. 11 - 62 - 1257688 A7 _ B7_ V. Description of the invention (&C# first read the back of the legal matter # fill this page) Display unit 2203, keyboard 2204, external connection 205 2205, indicator mouse 2206 and so on. A light-emitting device formed by using the present invention can be used for the display unit 2203. Fig. 19D shows a portable computer which is composed of a main body 2301, a display unit 2302, a switch 2303, an operation key 2304, an infrared ray 2305, and the like. A light-emitting device formed by using the present invention can be used for the display unit 2 302. Fig. 19E shows a portable video reproduction device provided with a recording medium (a specific DVD player). The apparatus is composed of a main body 2401, a casing 2402, a display unit A2403, a display unit B2404, a recording medium (D VD ) reading unit 2405, an operation key 2406, a speaker unit 2407, and the like. The display unit A2403 mainly displays image information, and the display unit B 2404 mainly displays text information. The portable image reproducing device is formed by using the light-emitting device of the present invention as the display units A2403 and B2404. The image reproducing apparatus provided with the recording medium includes a home game machine. Fig. 19F shows a goggle type display (head mounted display) which is composed of a main body 2501, a display unit 2502, and an arm unit 2503. A light-emitting device formed by using the present invention can be used for the display unit 205. Fig. 19G shows a video camera which is composed of a main body 2601, a display unit 2602, a casing 2603, an external connection port 2604, a remote control receiving unit 2605, an image receiving unit 2606, a battery 2607, a sound input unit 2608, an operation key 2609, and the like. A light-emitting device formed by using the present invention can be used for the display unit 2602. Fig. 19H shows a mobile phone which is applied by the main body 2701, the casing 2702, the display unit 2703, the sound input unit 2704, the sound output unit 2705, and the winter bar scale to the Chinese National Standard (CNS) A4 specification (21 X: 297 mm). - 63 - 1257688 A7 _B7____ V. Description of the invention (6i (please read the precautions on the back and fill out this page). Operation key 2706, external connection 707 2707, antenna 2708, etc. The mobile phone is illuminated by the use of the present invention. The device is formed as the display unit 2703. If the display unit 2703 displays a white character on a black background, the power consumption of the mobile phone can be reduced. If the brightness of light emitted from the organic material is increased in the future, the light having the organic element The device can also be used in a front or back projector that carries light that outputs image information and is magnified by a lens or the like to be projected on the screen. The electronic device proposed above is usually displayed by an electronic communication line such as the Internet and CATV (Cable TV). Distributed information, especially activity information with increased frequency. Due to the fast response speed of organic materials, it has luminescence The illuminating device of the component is adapted to display activity information. In the illuminating device, the illuminating portion consumes power. Therefore, it is desirable to display information so as to emit light as small as possible. Thus, if the illuminating device is used for a display unit that mainly displays text information, such as carrying The type of information terminal, particularly the mobile phone and the sound reproducing device, wants to distribute the portion in which the light-emitting portion displays the text information without emitting light as the background. As described above, the application range of the light-emitting device applicable to the present invention is wide, each The device can be used in electronic devices of the field. The electronic device in this example can be completed by using a light-emitting device manufactured by performing the methods shown in Embodiment Modes 1, 2 and Embodiments 1-6. The present invention includes detecting by using a detecting device The method, and the detection method are not only suitable for a light-emitting device (EL display) having a light-emitting element, but also suitable for using a semiconductor element utilizing semiconductor characteristics such as a liquid crystal display device (for example, a transistor, particularly a field effect transistor; usually MOS) Jingfeng F's Zhang scale is applicable to China National Standard (CNS) A4 specification ( 210-297 mm) i - 64 - 1257688 A7 - B7 V. All electrical equipment of the invention (d body and TFT). According to the detection method included in the manufacturing method of the semiconductor device of the present invention, the driving power source can be driven in a non-contact manner And the driving signal is transmitted to the TFT substrate. Therefore, the problem of the conventional contact type detecting method such as dust adhering to the TFT substrate and damaging the TFT substrate by the detecting device is overcome, and further, it can be formed in accordance with the manufacturing method of the TFT. The secondary coil, the rectifying circuit, and the waveform shaping circuit on the array substrate used in the detecting method in the present invention. Therefore, it is not necessary to increase the number of methods of manufacturing the TFT substrate. In particular, in the case of manufacturing an EL display, it is only necessary to manufacture a light-emitting element after determining the quality of the TFT substrate. Therefore, it is not necessary to form a light-emitting element in a TFT substrate which is not suitable for a product with an expensive material, which can eliminate waste and reduce manufacturing cost. (Please read the notes on the back and fill out this page.) Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Co., Ltd. Printed on the scale of China's national standard (CNS) A4 specification (210X297 mm) -65-

Claims (1)

1257688 A8 B8 C8 ______D8 VI. Patent Application 1 1. A method of manufacturing a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; (Please read the back note and then fill in the page) on the substrate Providing at least one secondary coil, wherein at least one secondary coil is electrically connected to the circuit; applying a magnetic field to induce a voltage in the at least one secondary winding to cause current to flow through at least a portion of the circuit; the measuring is generated in the circuit At least a portion of the electric field to test the operation of the circuit. 2. The method of fabricating a semiconductor device according to claim i, wherein the circuit comprises a thin film transistor. 3. The method of fabricating a semiconductor device according to claim 1, wherein the electric field is measured using a Pockels ceu material. 4. The method of manufacturing a semiconductor device according to claim 1, further comprising mounting the semiconductor device in an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, A group consisting of a laptop computer, a game organization, a portable information terminal, and a video reproduction device. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumer Cooperatives 5. The method of manufacturing a semiconductor device according to the scope of the patent application, further comprising electrically isolating the circuit from the at least one secondary coil. 6. A method of fabricating a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; providing at least one secondary coil on the substrate, wherein at least one secondary coil is electrically connected to the circuit; Magnetic field to induce voltage in at least one secondary coil, the scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) -66 - 1257688 A8 B8 C8 D8 VI. Patent application scope 2 Ministry of Economic Affairs Intellectual Property Office staff consumption The cooperative prints current through at least a portion of the circuit; measures electromagnetic waves generated in at least a portion of the circuit to test circuit operation. 7. The method of fabricating a semiconductor device according to claim 6, wherein the circuit comprises a thin film transistor. 8. The method of fabricating a semiconductor device according to claim 6, wherein the electric field is measured using an antenna. 9. The method of manufacturing a semiconductor device according to claim 6, further comprising mounting the semiconductor device in an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, A group consisting of a laptop computer, a game organization, a portable information terminal, and a video reproduction device. 10. The method of fabricating a semiconductor device according to claim 6, further comprising electrically isolating the circuit from the at least one secondary coil. 11. A method of fabricating a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; providing at least one secondary coil on the substrate, wherein at least one secondary coil is electrically connected to the circuit; at the circuit and at least one Providing a rectifying circuit between the secondary coils; applying a magnetic field to induce a voltage in the at least one secondary coil, whereby the current flows from the at least one secondary coil through the rectifying circuit to the circuit; measuring an electric field generated in at least a portion of the circuit To test the circuit operation. 12. The manufacturing method of the semiconductor device as claimed in item 11 of the patent application is applicable to the Chinese National Standard Rate (CNS) Α4 specification (210Χ297 mm) ---------- (Please read the notes on the back first) Fill in this page} p Γ Ψ -67- 1257688 A8 B8 C8 ----____D8 ____ VI. Patent application scope 3 'This circuit contains a thin film transistor. 1 3 · Semiconductor device as claimed in the scope of application The manufacturing method is that the electric field is measured by using a PockeIs cell. (Please read the note on the back side and then fill out this page.) 14· The manufacturing method of the semiconductor device as claimed in the second paragraph of the patent application' further includes mounting the semiconductor device to the electronic device. In the device, the electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a laptop computer, a game organization, a portable information terminal, and an image reproduction device. The manufacturing method of the semiconductor device of the eleventh aspect, wherein the rectifier circuit forms a power supply voltage. 16. As claimed in the πth item A method of manufacturing a conductor device, wherein the rectifier circuit comprises a diode, a capacitor, and a resistor. 17. The method of manufacturing a semiconductor device according to the scope of claim π further includes electrically separating the circuit from the at least one secondary coil. A method of manufacturing a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; the Ministry of Economic Affairs, the Intellectual Property Office employee consumption cooperative, printing on the substrate to provide at least one secondary coil, wherein at least one secondary coil a circuit electrically connecting; providing a rectifying circuit between the circuit and the at least one secondary coil; applying a magnetic field to induce a voltage in the at least one secondary coil, whereby the current flows from the at least one secondary coil through the rectifying circuit to the circuit; Measuring the electromagnetic wave generated in at least a part of the circuit to test the circuit operation. 19. The manufacturing method of the semiconductor device according to claim 18 of the patent scope - 68 - 3 applies to the Chinese National Standard (CNS) A4 specification (2l 〇X斯公羡) 1257688 A8 B8 C8 D8 VI. Application for patent scope 4, where The circuit comprises a thin film transistor. 20. The method of manufacturing a semiconductor device according to claim 18, wherein the electric field is measured by an antenna. (Please read the note on the back side and then fill in the page) 21. The method of manufacturing a semiconductor device according to Item 18, further comprising installing the semiconductor device in the electronic device, the electronic device being selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a laptop computer, and a game mechanism A group consisting of a portable information terminal and a video reproduction device. 22. The method of fabricating a semiconductor device according to claim 18, wherein the rectifier circuit forms a power supply voltage. A method of manufacturing a semiconductor device according to claim 18, wherein the rectifier circuit comprises a diode, a capacitor, and a resistor. 24. The method of fabricating a semiconductor device according to claim 18, further comprising electrically isolating the circuit from the at least one secondary coil. A method of manufacturing a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; providing at least one secondary wire on the substrate, wherein at least one secondary coil is electrically connected to the circuit; The property bureau employee consumption cooperative prints a waveform shaping circuit between the circuit and the at least one secondary coil; by applying a magnetic field to induce a voltage in at least one secondary coil, whereby the current is waveform shaped from the at least one secondary coil A circuit flows to the circuit; an electric field generated in at least a portion of the circuit is measured to test circuit operation. 3 Image scale applies to China National Standard (CNS) A4 specification (210X297 mm) -69- A8 B8 C8 D8 1257688 VI. Patent application scope 5 26 · The manufacturing method of the semiconductor device according to claim 25, wherein The circuit comprises a thin film transistor. 27. The method of fabricating a semiconductor device according to claim 25, wherein the electric field is measured using Pockels celi. 28. The method of fabricating a semiconductor device according to claim 25, further comprising mounting the semiconductor device in an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, A group consisting of a laptop computer, a game organization, a portable information terminal, and a video reproduction device. 29. The method of fabricating a semiconductor device according to claim 25, wherein the waveform shaping circuit forms a driving signal selected from the group consisting of a clock signal, a start pulse signal, and a video signal. 30. The method of fabricating a semiconductor device according to claim 25, wherein the waveform shaping circuit comprises a capacitor and a resistor. 31. The method of fabricating a semiconductor device of claim 25, further comprising electrically isolating the circuit from the at least one secondary coil. 32. A method of fabricating a semiconductor device, comprising: providing a circuit including a plurality of semiconductor elements on a substrate; providing at least one secondary coil on the substrate, wherein at least one secondary coil is electrically connected to the circuit; Providing a waveform shaping circuit between the secondary coils; applying a magnetic field to induce a voltage in the at least one secondary coil, whereby the current flows from the at least one secondary coil through the waveform shaping circuit to the circuit; Applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the note on the back and fill out this page) Order the Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print-70- 1257688 A8 B8 C8 ___ D8 VI. Application Patent Range 6 measures electromagnetic waves generated in at least a portion of a circuit to test circuit operation. (Please read the note on the back side and then fill out this page.) 33. The method of manufacturing a semiconductor device according to claim 32, wherein the circuit comprises a thin film transistor. 34. The semiconductor device according to claim 32 The manufacturing method of the invention, wherein the electric field is measured by an antenna. 3 5. The method of manufacturing a semiconductor device according to claim 32, further comprising mounting the semiconductor device into the electronic device, the electronic device being selected from the group consisting of a video camera and a digital camera. , a goggle-type display, a navigation system, a sound reproduction device, a laptop computer, a game organization, a portable information terminal, and a video reproduction device. 3 6. A method of manufacturing a semiconductor device as claimed in claim 32 The waveform shaping circuit forms a driving signal, and the driving signal is selected from the group consisting of a clock signal 'starting pulse signal and a video signal. 37. The manufacturing method of the semiconductor device according to claim 32, wherein the waveform shaping circuit comprises a capacitor and Resistance. Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing 38. The method of manufacturing a semiconductor device according to claim 32, further comprising: electrically separating the circuit from the at least one secondary line. 39. A method of manufacturing a display device, comprising: providing a driving circuit and a pixel circuit on a substrate , wherein the driving circuit and the pixel circuit each comprise a plurality of semiconductor elements; at least one secondary coil is provided on the substrate, wherein at least one secondary coil is electrically connected to the driving circuit and the pixel circuit; · by applying a magnetic field, Inductive voltage is induced in at least one secondary coil, and the reference is applicable to China National Standard (CNS) A4 specification (210X297 mm) -71 - 1257688 A8 B8 C8 D8 VI. Patent application scope 7 At least one of a circuit and a pixel circuit; measuring a rope generated in at least a portion of the driver circuit or the pixel circuit; _ to test operation of at least one of the driver circuit and the pixel circuit. 40. A manufacturing method of a display device, wherein the driving circuit and the pixel circuit each comprise at least one thin film electro-crystal mm body, respectively. The method of manufacturing a display device according to claim 39, wherein the electric field is measured by a Pockels cell. 42. The method of manufacturing the display device of claim 39, further comprising installing the semiconductor device into the electronic device, The electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a laptop computer, a game organization, a portable information terminal, and an image reproduction device. The manufacturing method of the display device further includes electrically separating the at least one secondary coil from the driving circuit and the pixel circuit. 44. A method of manufacturing a display device, comprising: providing a driving circuit and a pixel circuit on a substrate, wherein the driving circuit And the pixel circuits each comprise a plurality of semiconductor elements; at least one secondary line 提供 is provided on the substrate, wherein at least one secondary coil is electrically connected to the driving circuit and the pixel circuit; by applying a magnetic field to at least one time A voltage is induced in the coil, whereby current flows through the driving circuit and the pixel circuit At least one; · Measure the electromagnetic 3 hard-to-tension scale generated in at least part of the drive circuit or the pixel circuit. Applicable to China National Standard (CNS) A4 specification (210X297 mm) --------_装-- ( Please read the notes on the back and then fill out this page. Ordering the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing - 72- 1257688 A8 B8 C8 D8 VI. Applying for a patent range of 8 waves to test the drive circuit and the pixel circuit at least ~ Operation. The method of manufacturing the display device of claim 44, wherein the driving circuit and the pixel circuit each comprise at least one thin film transistor 0 π ϋ 46. A method of manufacturing a display device of claim 44, wherein the electric field is measured using an antenna. 47. The method of manufacturing a display device of claim 44, further comprising mounting the semiconductor device in an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, A group consisting of a laptop computer, a game organization, a portable information terminal, and a video reproduction device. The manufacturing method of the display device of claim 44, further comprising electrically separating the at least one secondary winding from the driving circuit and the pixel circuit. 49. A method of manufacturing a display device, comprising: providing a driving circuit and a pixel circuit on a substrate, wherein the driving circuit and the pixel circuit each comprise a plurality of semiconductor components; the Ministry of Economic Affairs Intellectual Property Office employee consumption cooperative printed on the substrate Providing at least one secondary coil, wherein at least one secondary coil is electrically connected to the driving circuit and the pixel circuit; providing a rectifier circuit and a waveform between the driving circuit and the secondary winding or between the pixel circuit and the secondary coil At least one of shaping circuits; by applying a magnetic field to induce a voltage in at least one secondary coil, whereby current flows from at least one secondary coil through at least one of the rectifier circuit and the waveform shaping circuit to the driving circuit and the pixel circuit At least one; This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210X297 mm): ' 1257688 A8 B8 C8 D8, patent scope 9 measures electricity generated in at least part of the drive circuit or pixel circuit _ 'test The operation of at least one of the drive circuit and the pixel circuit. 50. The method of manufacturing the display device of claim 49, wherein the driving circuit and the pixel circuit each comprise at least one thin film electrical body, respectively. The manufacturing method of the display device of claim 49, wherein the electric field is measured by using a PockeIs cell. 52. The method of manufacturing the display device of claim 49, further comprising installing the semiconductor device into the electronic device The electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a laptop computer, a game organization, a portable information terminal, and an image reproduction device. A method of manufacturing a display device according to the item 49, wherein the rectifier circuit comprises a diode, a capacitor, and a resistor. 54. A method of manufacturing a display device according to claim 49, wherein the waveform shaping circuit comprises a capacitor and a resistor. The manufacturing method of the display device of claim 49, wherein the rectifier circuit forms a power source 56. The method of manufacturing a display device according to claim 49, wherein the waveform shaping circuit forms a driving signal selected from the group consisting of a clock signal, a start pulse signal, and the like. 57. A method of manufacturing a display device according to claim 49, further comprising electrically separating at least one secondary coil from the driving circuit and the pixel circuit. -74- National Standard (CNS) A4 Specification (210X297 mm) 1257688 A8 B8 C8 D8 VI. Patent Application Area 58. A manufacturing method for a display device, including: (Please read the note on the back and then fill in this page) Provide on the substrate a driving circuit and a pixel circuit, wherein the driving circuit and the pixel circuit each comprise a plurality of semiconductor elements; at least one secondary coil is provided on the substrate, wherein at least one secondary coil is electrically connected to the driving circuit and the pixel circuit; a rectifier circuit is provided between the circuit and the secondary coil or between the pixel circuit and the secondary coil At least one of shaping circuits for inducing a voltage in at least one secondary winding by applying a magnetic field, whereby current flows from at least one secondary coil through at least one of the rectifier circuit and the waveform shaping circuit to the driving circuit and the pixel At least one of the circuits; measuring electromagnetic waves generated in at least a portion of the driving circuit or the pixel circuit to test operation of at least one of the driving circuit and the pixel circuit. 59. A method of manufacturing a display device according to claim 58 of the patent application, Wherein the driving circuit and the pixel circuit each comprise at least one thin film transistor. The manufacturing method of the display device of claim 58 wherein the electric field is measured by an antenna. 61. The manufacturing method of the display device of claim 58, further comprising installing the semiconductor device into the electronic device, the electronic device being selected from the group consisting of a video camera, a digital camera, and a goggles A group consisting of a display, a navigation system, a sound reproduction device, a laptop computer, a game organization, a portable information terminal, and a video reproduction device. 6. The method of manufacturing a display device according to claim 5, wherein the rectifier circuit comprises a diode, a capacitor and a resistor. -75- 24 paper scale applicable to China National Standard (CNS) A4 specification (210x297 cm) 'Application patent scope μ !257688 63. A method of manufacturing a display device as claimed in claim 58. The waveform shaping circuit includes a capacitor and a resistor. 64. A method of manufacturing a display device as claimed in claim 58 wherein the rectifier circuit forms a power supply voltage. 65. The method of manufacturing a display device according to claim 58 wherein the waveform shaping circuit forms a driving signal selected from the group consisting of a clock signal, a start pulse signal and a video signal. 66. The method of fabricating a display device of claim 58 further comprising electrically isolating at least one secondary coil from the drive circuit and the pixel circuit. (Please read the notes on the back and fill out this page again. Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives Printed [Difficult-to-Zhang Scale Applicable to China National Standard (CNS) Α4 Specifications (210Χ297 mm) ^, -76