TWI283926B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI283926B
TWI283926B TW095115890A TW95115890A TWI283926B TW I283926 B TWI283926 B TW I283926B TW 095115890 A TW095115890 A TW 095115890A TW 95115890 A TW95115890 A TW 95115890A TW I283926 B TWI283926 B TW I283926B
Authority
TW
Taiwan
Prior art keywords
impurity region
field plate
region
potential
field
Prior art date
Application number
TW095115890A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629558A (en
Inventor
Kazuhiro Shimizu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200629558A publication Critical patent/TW200629558A/zh
Application granted granted Critical
Publication of TWI283926B publication Critical patent/TWI283926B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D17/00—Excavations; Bordering of excavations; Making embankments
    • E02D17/20—Securing of slopes or inclines
    • E02D17/205—Securing of slopes or inclines with modular blocks, e.g. pre-fabricated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2600/00—Miscellaneous
    • E02D2600/20—Miscellaneous comprising details of connection between elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • General Engineering & Computer Science (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Paleontology (AREA)
  • Civil Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095115890A 2004-03-03 2004-11-30 Semiconductor device TWI283926B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004058883A JP4667756B2 (ja) 2004-03-03 2004-03-03 半導体装置

Publications (2)

Publication Number Publication Date
TW200629558A TW200629558A (en) 2006-08-16
TWI283926B true TWI283926B (en) 2007-07-11

Family

ID=34879837

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095115890A TWI283926B (en) 2004-03-03 2004-11-30 Semiconductor device
TW093136871A TWI277208B (en) 2004-03-03 2004-11-30 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW093136871A TWI277208B (en) 2004-03-03 2004-11-30 Semiconductor device

Country Status (7)

Country Link
US (1) US7327007B2 (enExample)
JP (1) JP4667756B2 (enExample)
KR (1) KR100710433B1 (enExample)
CN (1) CN100388493C (enExample)
DE (1) DE102004063523B4 (enExample)
IT (1) ITTO20050127A1 (enExample)
TW (2) TWI283926B (enExample)

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JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4863665B2 (ja) 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4914589B2 (ja) 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
JP4973238B2 (ja) * 2007-02-28 2012-07-11 三菱電機株式会社 半導体装置
US7719076B2 (en) * 2007-08-10 2010-05-18 United Microelectronics Corp. High-voltage MOS transistor device
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
AU2010281317A1 (en) 2009-08-04 2012-02-23 Gan Systems Inc. Island matrixed gallium nitride microwave and power switching transistors
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
JP6096109B2 (ja) 2010-04-13 2017-03-15 ジーエーエヌ システムズ インコーポレイテッド アイランドトポロジを用いる高密度窒化ガリウム装置
WO2011152253A1 (ja) * 2010-06-04 2011-12-08 富士電機株式会社 半導体装置および駆動回路
US8629513B2 (en) * 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
DE102011108651B4 (de) * 2011-07-26 2019-10-17 Austriamicrosystems Ag Hochvolttransistorbauelement und Herstellungsverfahren
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
CN102856356B (zh) * 2012-09-28 2015-09-09 中国科学院微电子研究所 用于半导体功率器件的终端
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
EP2757580A1 (en) * 2013-01-22 2014-07-23 Nxp B.V. Bipolar cmos dmos (bcd) processes
JP6228428B2 (ja) 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
JP6210913B2 (ja) * 2014-03-20 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
CN105789051A (zh) * 2014-12-24 2016-07-20 北大方正集团有限公司 一种ldmos晶体管及制作方法
CN105070756B (zh) * 2015-08-18 2018-06-19 上海华虹宏力半导体制造有限公司 超高压ldmos器件结构
DE112017000081B4 (de) * 2016-03-14 2022-12-29 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
JP6693805B2 (ja) * 2016-05-17 2020-05-13 ローム株式会社 半導体装置
US11063116B2 (en) 2016-09-13 2021-07-13 Mitsubishi Electric Corporation Semiconductor device
JP6996247B2 (ja) * 2017-11-17 2022-01-17 富士電機株式会社 半導体集積回路装置
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路
JP7608226B2 (ja) * 2021-03-19 2025-01-06 株式会社東芝 半導体装置
US20230097805A1 (en) * 2021-09-24 2023-03-30 Intel Corporation Complex field-shaping by fine variation of local material density or properties
GB2639824A (en) * 2024-03-21 2025-10-08 X Fab Global Services Gmbh Improved field plate

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JPS61168253A (ja) * 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
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US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
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JP3917211B2 (ja) 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH104143A (ja) 1996-06-14 1998-01-06 Sanyo Electric Co Ltd 半導体集積回路
JPH1012873A (ja) * 1996-06-27 1998-01-16 Matsushita Electric Works Ltd 半導体装置
JPH10242454A (ja) * 1997-02-27 1998-09-11 Matsushita Electric Works Ltd 半導体装置
EP0936674B1 (en) 1998-02-10 2006-04-26 STMicroelectronics S.r.l. Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate
JP2000091443A (ja) * 1998-09-14 2000-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000294763A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体装置
JP3425131B2 (ja) * 1999-12-17 2003-07-07 松下電器産業株式会社 高耐圧半導体装置
KR100374627B1 (ko) * 2000-08-04 2003-03-04 페어차일드코리아반도체 주식회사 고내압 아이솔레이션 영역을 갖는 고전압 반도체 소자
JP4610786B2 (ja) 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置

Also Published As

Publication number Publication date
TW200531275A (en) 2005-09-16
TW200629558A (en) 2006-08-16
US20050194656A1 (en) 2005-09-08
CN100388493C (zh) 2008-05-14
JP2005251903A (ja) 2005-09-15
DE102004063523B4 (de) 2008-05-29
DE102004063523A1 (de) 2005-09-22
JP4667756B2 (ja) 2011-04-13
KR20060043235A (ko) 2006-05-15
CN1665028A (zh) 2005-09-07
US7327007B2 (en) 2008-02-05
ITTO20050127A1 (it) 2005-09-04
TWI277208B (en) 2007-03-21
KR100710433B1 (ko) 2007-04-24

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MM4A Annulment or lapse of patent due to non-payment of fees