CN100388493C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN100388493C
CN100388493C CNB2005100047850A CN200510004785A CN100388493C CN 100388493 C CN100388493 C CN 100388493C CN B2005100047850 A CNB2005100047850 A CN B2005100047850A CN 200510004785 A CN200510004785 A CN 200510004785A CN 100388493 C CN100388493 C CN 100388493C
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CN
China
Prior art keywords
mentioned
semiconductor layer
impurity range
field plate
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2005100047850A
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English (en)
Chinese (zh)
Other versions
CN1665028A (zh
Inventor
清水和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1665028A publication Critical patent/CN1665028A/zh
Application granted granted Critical
Publication of CN100388493C publication Critical patent/CN100388493C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D17/00—Excavations; Bordering of excavations; Making embankments
    • E02D17/20—Securing of slopes or inclines
    • E02D17/205—Securing of slopes or inclines with modular blocks, e.g. pre-fabricated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2600/00—Miscellaneous
    • E02D2600/20—Miscellaneous comprising details of connection between elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • General Engineering & Computer Science (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Paleontology (AREA)
  • Civil Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2005100047850A 2004-03-03 2005-01-26 半导体器件 Expired - Lifetime CN100388493C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004058883A JP4667756B2 (ja) 2004-03-03 2004-03-03 半導体装置
JP2004058883 2004-03-03

Publications (2)

Publication Number Publication Date
CN1665028A CN1665028A (zh) 2005-09-07
CN100388493C true CN100388493C (zh) 2008-05-14

Family

ID=34879837

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100047850A Expired - Lifetime CN100388493C (zh) 2004-03-03 2005-01-26 半导体器件

Country Status (7)

Country Link
US (1) US7327007B2 (enExample)
JP (1) JP4667756B2 (enExample)
KR (1) KR100710433B1 (enExample)
CN (1) CN100388493C (enExample)
DE (1) DE102004063523B4 (enExample)
IT (1) ITTO20050127A1 (enExample)
TW (2) TWI283926B (enExample)

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JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4863665B2 (ja) * 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4914589B2 (ja) * 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
JP4973238B2 (ja) * 2007-02-28 2012-07-11 三菱電機株式会社 半導体装置
US7719076B2 (en) * 2007-08-10 2010-05-18 United Microelectronics Corp. High-voltage MOS transistor device
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
WO2011014951A1 (en) * 2009-08-04 2011-02-10 John Roberts Island matrixed gallium nitride microwave and power switching transistors
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
CN102893392B (zh) 2010-04-13 2015-08-05 Gan系统公司 采用孤岛拓扑结构的高密度氮化镓器件
US8546889B2 (en) 2010-06-04 2013-10-01 Fuji Electric Co., Ltd. Semiconductor device and driving circuit
US8629513B2 (en) * 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
DE102011108651B4 (de) * 2011-07-26 2019-10-17 Austriamicrosystems Ag Hochvolttransistorbauelement und Herstellungsverfahren
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
CN102856356B (zh) * 2012-09-28 2015-09-09 中国科学院微电子研究所 用于半导体功率器件的终端
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
EP2757580A1 (en) * 2013-01-22 2014-07-23 Nxp B.V. Bipolar cmos dmos (bcd) processes
JP6228428B2 (ja) 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
JP6210913B2 (ja) * 2014-03-20 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
CN105789051A (zh) * 2014-12-24 2016-07-20 北大方正集团有限公司 一种ldmos晶体管及制作方法
CN105070756B (zh) * 2015-08-18 2018-06-19 上海华虹宏力半导体制造有限公司 超高压ldmos器件结构
CN107949915B (zh) * 2016-03-14 2021-04-27 富士电机株式会社 半导体装置及制造方法
JP6693805B2 (ja) * 2016-05-17 2020-05-13 ローム株式会社 半導体装置
JP6590076B2 (ja) 2016-09-13 2019-10-16 三菱電機株式会社 半導体装置
JP6996247B2 (ja) * 2017-11-17 2022-01-17 富士電機株式会社 半導体集積回路装置
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路
JP7608226B2 (ja) * 2021-03-19 2025-01-06 株式会社東芝 半導体装置
US20230097805A1 (en) * 2021-09-24 2023-03-30 Intel Corporation Complex field-shaping by fine variation of local material density or properties
GB2639824A (en) * 2024-03-21 2025-10-08 X Fab Global Services Gmbh Improved field plate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198139B1 (en) * 1998-09-14 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Complementary MOS device
US20020017683A1 (en) * 2000-08-04 2002-02-14 Fairchild Korea Semiconductor Ltd. High voltage semiconductor device having high breakdown voltage isolation region
US6376891B1 (en) * 1995-12-30 2002-04-23 Mitsubishi Denki Kabushiki Kaisha High voltage breakdown isolation semiconductor device and manufacturing process for making the device

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CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JPS61168253A (ja) * 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
JPS6364365A (ja) 1986-09-05 1988-03-22 Hitachi Ltd 半導体装置
US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
JP2605860B2 (ja) 1989-03-22 1997-04-30 富士電機株式会社 高耐圧素子を含む半導体装置
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2739004B2 (ja) * 1992-01-16 1998-04-08 三菱電機株式会社 半導体装置
US5455436A (en) * 1994-05-19 1995-10-03 Industrial Technology Research Institute Protection circuit against electrostatic discharge using SCR structure
JP3808116B2 (ja) 1995-04-12 2006-08-09 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH104143A (ja) 1996-06-14 1998-01-06 Sanyo Electric Co Ltd 半導体集積回路
JPH1012873A (ja) * 1996-06-27 1998-01-16 Matsushita Electric Works Ltd 半導体装置
JPH10242454A (ja) * 1997-02-27 1998-09-11 Matsushita Electric Works Ltd 半導体装置
EP0936674B1 (en) * 1998-02-10 2006-04-26 STMicroelectronics S.r.l. Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate
JP2000294763A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体装置
JP3425131B2 (ja) * 1999-12-17 2003-07-07 松下電器産業株式会社 高耐圧半導体装置
JP4610786B2 (ja) 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置

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US6376891B1 (en) * 1995-12-30 2002-04-23 Mitsubishi Denki Kabushiki Kaisha High voltage breakdown isolation semiconductor device and manufacturing process for making the device
US6198139B1 (en) * 1998-09-14 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Complementary MOS device
US20020017683A1 (en) * 2000-08-04 2002-02-14 Fairchild Korea Semiconductor Ltd. High voltage semiconductor device having high breakdown voltage isolation region

Also Published As

Publication number Publication date
DE102004063523A1 (de) 2005-09-22
US20050194656A1 (en) 2005-09-08
KR20060043235A (ko) 2006-05-15
CN1665028A (zh) 2005-09-07
JP4667756B2 (ja) 2011-04-13
TW200629558A (en) 2006-08-16
US7327007B2 (en) 2008-02-05
ITTO20050127A1 (it) 2005-09-04
TWI283926B (en) 2007-07-11
DE102004063523B4 (de) 2008-05-29
TW200531275A (en) 2005-09-16
JP2005251903A (ja) 2005-09-15
TWI277208B (en) 2007-03-21
KR100710433B1 (ko) 2007-04-24

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Granted publication date: 20080514