TWI279881B - Self-coplanarity bumping shape for flip chip - Google Patents

Self-coplanarity bumping shape for flip chip Download PDF

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Publication number
TWI279881B
TWI279881B TW091103580A TW91103580A TWI279881B TW I279881 B TWI279881 B TW I279881B TW 091103580 A TW091103580 A TW 091103580A TW 91103580 A TW91103580 A TW 91103580A TW I279881 B TWI279881 B TW I279881B
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TW
Taiwan
Prior art keywords
wire forming
gold
gold wire
rti
base portion
Prior art date
Application number
TW091103580A
Other languages
English (en)
Inventor
Young-Do Kweon
Rajendra Pendse
Nazir Ahmad
Kyung-Moon Kim
Original Assignee
Chippac Inc
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Publication date
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Application granted granted Critical
Publication of TWI279881B publication Critical patent/TWI279881B/zh

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Description

五、發明説明（i ) 相關申請案的交互參考 此申請案主張於2001年2月27曰立案的臨時申請編號 60/272,240之優先權。 〜 發明背景 本發明關於在一積體電路晶片及一基板之間形成電性内 連線。特足而言，本發明係關於在一覆晶半導體裝置封裝 中内連線一積體電路晶片及該基板。 在一積體電路晶片及一像是印刷電路基板的基板之間的 内連線通常是在該裝置封裝的組立斯間形成。在一常用的 内連線方法中，金凸塊係安裝在該積體電路晶片上，其係 在相對應於該基板上金屬接觸墊的配置之一種配置中。在 封裝組期間，該晶片及該基板係以對準的相對應凸塊及 銲墊來對準，然後該晶片及基板在可促進該凸塊接合到該 金屬墊上的條件（溫度，壓力，超音波振動）之下被放置在 一起。 該積體電路晶片及該基板的表面不會均勻地平坦。該基 板可开J成一有機聚合物，其可具有一特殊不平坦的表面， 特別是該基板使用一較低成本製程來製造的時候。該基板 表面可以扭曲，或可另具有不平整性。因此，在該基板上 金屬接觸墊的表面可為非共平面。因此，當該晶片與該基 板的表面並列時，不同的金屬墊表面係與該晶片的相對應 接觸表面具有不同的距離。由於此不平整性，當該晶片及 孩基板放置在一起時，一些凸塊會無法與其對應的銲墊達 到良好的接觸，造成一無法運作的封裝。 __ ___!_5- 本紙浪尺度適用中國國家標準(CNS) A4規格（210X297公董) '一~ --- 1279881 A7 B7
五、發明説明（ 在產業界持續地需要降低半導體封裝的尺寸。當封 作得愈小，該内連線結構也會製作得愈小，且該晶片及兮 基板之間的間隙亦變得較窄。當該晶片及該基板之間的^ 隙非常窄，甚至該基板表面的相當微細的不平整性也. 為明顯，其會造成在封裝構建期間不可接受的内連線不良 〇 其需要在電子晶片封裝組立中改善建構穩固内連線的可 靠性。 發明概要 根據本發明，-金線成形凸塊結構包含—基座部份及_ 支幹部份。該基座部份係固定在要進㈣連線的—對構件 < 一中的銲墊或跡線（例如一積體電路晶片），而該支幹末 端設置來接觸該第二構件上的金屬墊（例如一印刷電路 板），以完成該内連線。根據本發明，該支幹末端被截斷 而形成一橫斷平面，而該支幹更為符合於該基座。在符合 性中的差異係由形成直徑比該基座要小的支幹所造成。或 者，苻合性中的差異可由使用比該基座具有更為符合性之 材料來形成該支幹來造成。該第一及第二構件係並列於該 第構件上的金線成形凸塊，其對準於該第二構件上相對 應的金屬墊。該構件係朝向彼此移動，其條件為利於該金 線成形凸塊支幹接合到該金屬墊。因為該構件的表面並非 均勻地平坦’且該表面朝向彼此移動，某些支幹會比其它 先接觸到其相對應的銲墊；這些支幹在該表面移動更為接 近時會變形’而更多的支幹會接觸到其相對應的銲墊；最 紙張尺度適财國a家鮮(CNS) Μ規格(加,7讀）-6 ------ 1279881 A7 B7 五、發明説明（ 後所有的支幹皆會接觸，並接合於其相對應的銲墊。該金 線成形凸塊基座，其較不符合於該支幹，大體上在支幹變 形期間可維持它們的形狀，而該基座可提供一中止，來防 止ί亥第一及第二構件更進一步地移動在一起，並保證可維 持该表面之間的一最小距離（分隔該凸塊及銲塾）。在該變 形過私中’該金線成形凸塊的支幹部份可縮短的程度可提 供該金屬墊表面的共平面性之實際的公差。 根據本發明的金線成形凸塊結構，其特別有用於非常薄 的覆晶封裝之内連線，其中該第一構件為一積體電路晶 片，而一第二構件為一基板，例如一印刷電路基板。 在一通用方面，本發明之特徵為一種包含一基座部份的 金線成形凸塊結構，其固定於一内連線配對（例如一積體 電路晶片）及一支幹部份中的一個構件，其中該支斡部份 具有一橫斷平面上表面，其設置來接觸一内連線配對（例 如一印刷電路板基板）的一第二構件上的金屬墊。該支幹 部份此該基座部份更柔靭，所以在對該上表面朝向該基座 施加壓力時，其條件為可促進該支幹與該銲墊的接合，該 支幹部份會變形且變得更短，而該基座部份維持大體上未 變形。 在一些具體實施例中，該凸塊基座部份包含一第一材 料，而孩支幹部份包含一第二材料，且該第二材料比該第 一材料更為符合。因為該第二材料比第一材料更為符合， 對琢支幹部份的上表面朝向該基座所施加的壓力，可以 (在促進該支幹與該銲墊的接合之條件下）造成該支幹部份
裝 訂
線 1279881
的又形，所以其成為逐漸變短，而該基座部份維持大體上 不又开y。在一些具體實施例中，該第一材料包含鎳，鎳合 “ 同或銅合金，而該第二材料包含一焊料，金，或金 合金。在第二材料包含一焊料的具體實施例中，促進該支 幹人泫銲墊接合的條件包含施加足夠的熱量來熔化該焊 與該銲墊。 " 在一些具體實施例中，該凸塊基座部份包含一具有柔靭 特性的材料’其可相同，類似，或相異於該支幹的材料， 並且例如包含與該支幹部份大體上相同的材料。在這種具 貝施例中，至少該支幹的上表面之直徑要小於該基座， 所以雖然在材料的符合性上沒有差別，該支幹即因為其較 小的直徑而會比該基座更加柔靭。一較佳的材料為金， 金合金。 在这接合處理期間該支幹在其變形時可縮短的程度建立 了非共平面性範圍的限制，其可對於要内連線的給：構件 所容忍。目此，假設在該第一構件上所有凸塊的支幹上表 面係大體上平面化—此縮短能力(其可稱之為該“ z層級調 整”），其必須選擇來大於該第二構件上個別銲墊的非共平 面性之最大範圍。此可保證任何給定配對的接合，而縮短 該凸塊的支幹部份，其可接觸到最為接近該第一構件表面 的銲塾，其m⑽與韓該第-構件表面最遠的輝 良好接觸。換言之’該z層級調整可提供容納該鮮墊 或该第一及第二構件之間共平面性的最大程度。 在另一通用方面，本發明之特徵在於一種在一接觸表面 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐y 1279881 A7 _B7 五、發明説明（5 ) 上开）成一金線成形凸塊的方法’其藉由在該表面上形成一 凸塊基座部份’由該基座的上端拉伸出一通常為錐形的尾 端’並截斷該尾端來具有一平面橫斷上表面，及具有由該 基座部份到該上表面之長度的支幹部份。在一些具體實施 例中’至少該金線成形凸塊的尾端部份係使用一打線接合 工具來形成，而該錐形尾端的尺寸使得在截斷之後，該支 幹部份所得到的上表面之直徑至少大約相等於一指定的導 線直徑’且不大於該基座的直徑，更常見的是至少約為一 指足導線直徑的兩倍，且不大於該基座的直徑。該平面橫 斷支幹上表面為根據本發明的一重要特徵，因為其改善了 該接合處理期間該平面上表面與該金屬塾的接觸，並可更 為可靠地造成一更為穩固的内連綠。在一些具體實施例 中，該截斷包含化學機械研磨。 在該接合處理期間，該金線成形凸塊的基座部份可被取 代’或可膨脹一些。雖然任何這種變形與該金線成形凸塊 的支幹部份之變形無實質的關係，該金線成形凸塊基座的 接觸於該第一構件上環繞的保護材料，由於在接觸點處的 塵力或熱應力，將會造成該保護材料的一些破壞，或降低 一些該保護材料的可靠性。為了減輕這種效應，在一些具 體實施例中’該金線成形凸塊的基座部份之直徑不大於在 該保護層中與該第一構件上該接合墊之開口直徑的〇 85 倍。 在另一通用方面，本發明的特徵在於一種在一電子封裝 的一第一構件及一第二構件之間形成一内連線的方法，其 ------- -9- 本紙張尺度適用中國國家標準(CNS) 格（210X297公董)--一 1279881
精由.在孩第-構件上指定的位置處，提供複數個金線成 1凸塊在接觸位置上，每個該金線成形凸塊具有一基座部 <刀及一支幹部份，其係比該基座部份 份具有-橫斷平面上表面；提供一第二構件，在該第支:: 件的表面足指定位置上具有複數個接合墊，在該第一及第 一構件上有相對應的個別指定位置；並列該第一及第二構 件，使得該相對應的凸塊及銲墊可對準；及將該第一及第 二構件放置在-起，其條件為促進該凸塊接合到該個別金 屬墊之上。 圖式簡單說明 圖1所示為一習用金線成形凸塊内連線結構之橫截面 圖。 圖2所示為使用如圖i之金線成形凸塊之覆晶封裝之橫截 面圖，其顯示出由於該晶粒與該基板之間共平面性的變化 造成的内連線失效。 圖3所TF為根據本發明一金線成形凸塊内連線結構之具 體實施例的橫截面圖。 圖4所不為使用根據本發明之金線成形凸塊之覆晶封裝 的橫截面圖，其顯示出該晶粒與該基板之間改良的内連 線。 發明詳細說明 現在將參考圖面來詳細說明本發明，圖面中顯示出本發 明中供選擇的具體實施例。該圖面僅為圖示，顯示出本發 明的特徵及其與其它特徵及結構之關係，其並未依比例ς 五、發明説明（ t。特別是：為了說明的目的，在圖中某些厚度有放大。 中文α表不的π楚性，在顯示本發明具體實施例的圖面 ^有7L素與在其它圖面中所對應的元素並未特別重新 、_'，雖然其在所有圖面中皆可立即辨識出來。 現在請參考圖i，其顯示一習用金線成形凸塊内連線結 之&截面圖，其係目定在一積體電路晶片上一選擇的 :觸位置處的-接觸表面。所示僅為該積體電路晶片的一 邵伤，特別是一接觸位置12, #例如可為一導線，像是銘 跡線，及-保護層14，其具有—開口 13暴露出該導線的表 面1卜？5金線成形凸塊16係形成與該導線有導電接觸。該 金線成形凸塊具有一平坦的球形形狀，如同-略微平坦的 求或填滿的％ ’其製造成品上具有_殘留的略微升高的 邵份18 ’其為形成該凸塊之製程的殘餘物。該金線成形凸 塊在該導線表面11之上的整體高度15，其包含該略微升高 的上万部份1 8之高度1 9，及該平坦化球形凸塊1 6本身的 高度17。該凸塊16的高度17在不同的封裝結構中有所不 同，特別是料該晶片與要與該晶片内連線的基板之間具 有-較窄間隙的封裝而言會較小。其中一殘餘的略微升高 部份18存在於該凸塊上，其高度19基本上小於該基座高度 的四分之一；例如，一典型習用具有高度17約為25微米的 凸塊將不會有升高的部份18，或如果存在有一升高的部 份，其基本上的高度丨9將小於約6微米。 習用上，一金線成形凸塊丨6係由調整使用一打線接合工 具的打線製程所形成。特別是，其使用一用以形成一具有 ____ 本紙張尺度制t ® ®家標準(CNS) A4規格(210X297公爱"一 ---------- 1279881 A7 B7 五、發明説明（ 一特定導線直徑的金或金合金打線接合之打線接合工具來 形成一大致為球形的導線末端，其接觸於該導線的表面， 其力量及溫度的條件為促進該球形導線末端到該導線表面 上的接合，並造成該球狀導線末端的某個程度的平坦化。 然後，該打線接合工具即撤除，而該導線部份接近於該球 狀凸塊1 6處被截斷，連接該殘餘部份丨8。 圖2所不為在20為一橫截面，其具有圖示的習用凸塊 足積體電路晶片，與在一非平坦表面上具有相對應的金屬 墊之配置的基板之間，欲形成一適當的内連線之失敗嘗試 的結果。在圖2中，在2 2所標示的一積體晶片具有一些習 用的凸塊，例如21及23 ,其固定於該積體晶片表面中的接 觸位置，其未示於圖2 ;而一基板24，其在表面26上具有 一些金屬墊，例如25及27。該基板表面27並非平坦，其 可預期為一般製程的結果；及，因此例如2 5及2 7的該金屬 墊之上表面28並非共平面。特別是，當該積體電路晶片及 邊基板的表面並列時，由於該非共平面性，某些銲整（例 如銲墊2 5 )會比其它（例如銲墊2 7)更為接近於該並列的積 體電路晶片表面。因此，當該積體晶片22及該基板24在該 封裝組立製程的内連線接合階段期間朝向彼此來移動時， 這些更為接近的銲墊（例如2 7)與其個別凸塊（例如2 3 )之接 觸會限制該積體晶片22與該基板24更進一步地朝向彼此移 動’並干擾到該更為遠離的銲墊（例如2 5 )與其個別凸塊 (例如2 1)之有效接觸，而妨礙了在這些點形成穩固的内連 線0 丨 _____- 12- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公A) 1279881 A7
根據本發明’提供了在具有非共平面的銲塾表面之基板 上形成改良的内連線，其係使用每個具有一基座部份及一 支幹部6的金線成形凸塊，纟中該基座部份固定於該積體 電路晶片上一導電銲墊或跡線，而該支幹部份係用於接觸 泛基板上的一導電銲墊，且其中該支幹部份比該基座部份 更為柔靭。根據本發明_金線成形凸塊的具體實施例係藉 由圖3的範例來顯示。根據本發明的金線成形凸塊包含基 座部份3 6及支幹部份3 8。基座部份3 6係固定在一導線j 2 上的表面1 1，其暴露在一保護材料丨4中的一開口 1 3。支 幹部伤38之形狀一般為具有橫斷平面上表面39的一截斷的 錐形。 根據本發明的一金線成形凸塊可方便地由調整使用一打 、’泉接a工具的打線接合製程來形成。特別是，其使用一用 以形成一具有一特定導線直徑的金或金合金打線接合之打 線接合工具來形成一大致為球形的導線末端，其接觸於該 導線的表面，其力量及溫度的條件為促進該球形導線末端 到該導線表面上的接合，並造成該球狀導線末端的某個程 度的平坦化。此有些平坦化的球形導線末端構成該凸塊的 基座部份3 6。然後，該打線接合工具即以一特定的速率撤 除’以形成一大致為錐形的尾端，其一般係揭示於例如美 國專利5,874,780中’其在此引用做為參考。然後該尾端被截 斷’並形成該橫斷平面上表面39，例如藉由化學機械研 磨，而造成該截斷的大致為錐形的支幹部份3 §。 根據本發明之金線成形凸塊的支幹部份3 §係比該基座部 — · 13 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） I279881
發明説明（ 份3 6更為柔靭。 中的差異係由在形成該支幹部份及該基座部份 、 枓〈差異而造成。也就是說，該支幹部份可由 厓邵份之材料要柔軟的材料所製成，其條件為形成 内連在接合。舉例而言，該基座部份可由例如鎳，銅，或 -鎳或銅合金來形成；而該支幹部份可由一焊料，金，或 金合金形成。其可使用其它的材料組合，其係在内連線接 二开/成釭件下使其具有相對不同符合性來選擇。舉例而 言，當使用-焊料做為該支幹部份時，該内連線接合形成 条牛將b έ熱處理’其足以炫化及溶合該焊料到該鲜塾 上，但*會太高而允許該基座部份有實質的變％。而例如 使用金做為該支幹部份時，該内連線接合形成條件將包含 施加力量，其足以壓縮及縮短該支幹部份，但不會太大而 來變形該基座部份。 在柔勒性中的差異可額外地或另外地由該基座及支幹部 伤的尺寸差異所造成，例如圖3之範例所示。特別是，例 如孩支幹部份的表面3 9之直徑3 3在當明顯地小於該基座的 直徑31時，如同該支幹部份的最寬直徑，其中其接合到該 基座。施加在該支幹部份的上表面3 9之壓縮力，並位在該 支幹部份軸的方向上，其最大到一力量的極限，其可變形 及縮短該支幹，而不會明顯地變形該基座。 因為該基座部份在垂直於該晶片及該基板表面的方向上 大體上是不能壓縮的，該基座部份的高度3 2建立了該晶片 及該基板表面之間的間隙上有一實際的下限。類似地，雖 本故張尺度遑用中國國家標準(CNS) Α4規格(21()χ297公爱) -14- I279881
然該支幹部份在垂直於該晶片及該基板表面的方向上並非 無限地可壓縮’該支幹部份的高度34建立了可容忍的銲墊 表面非共平面性程度的實際上限。 圖4所不在4 0為一積體晶片與一非平坦基板的成功穩固 之内連、’泉，其使用了根據本發明的金線成形凸塊。此處積 體晶片2 2具有一些根據本發明的金線成形凸塊，其每個具 有一基座部份3 6及該支幹部份3 8，其固定於該積體晶片表 面中的接觸位置，其未示於圖4。一基板24，其在表面％ 上具有一些金屬墊，例如25及27。該基板表面27並非平 坦，其可預期為一般製程的結果；及，因此例如25及27的 該金屬墊之上表面28並非共平面。所顯示的該非共平面性 的最大程度在圖4中為尺寸29 ;也就是關於該晶片表面， 該最接近銲墊27及該最遠的銲墊25之銲墊表面28之高度 之間的差異。如圖4所示，根據本發明之金線成形凸塊的 支幹部份38係製作成具有足夠的高度34，其可製成與該基 厘邵份36具有更充份的符合性，其中該最遠的銲墊25已經 形成與該相對應的金線成形凸塊支幹的上表面之穩固的接 合丄而該最近的銲墊27已壓縮其相對應的金線成形凸塊， 而貫際上為將其整個高度到該基座部份的上限，其可有效 地做為進一步壓縮的中止。 $ 範例 以相同的材料形 選擇使得該支幹 中’根據本發明 在此範例中，該金線成形凸塊及支幹係 成，例如金或一金合金，而該相關尺寸之 部份可比該基座部份更為柔靭。在此範例 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） -15- 1279881 A7 B7 五、發明説明（12 ) 所適用的設計規則如下（請參考圖3及4):該支幹末端39直 fe 3 3大於該導線直徑約兩倍；而該金線成形凸塊整體高度 3 5及該基座鬲度3 2之間的差異3 4 (大致為該支幹高度）係 大於該基板24上所有銲墊25的最大共平面性之變: 而該支幹高度34至少為該基座高度的約15倍，其範圍基 本上是在該基座高度的約丨.5到3倍。其視需要，該基座冗 直徑3丨可小於在該保護層14中該開口 13的直徑之〇㈠ 倍。 申凊專利範圍中。
其它的具體實施例皆述於以下的 裝 訂
線 -16-本紙張尺度適用中國國家標準(CNS) Α4規格(210Χ 297公釐)

Claims (1)

  1. 79|§9ll〇3580號專利申請案 中文申請專利範圍替換本(95年4月） A8 B8 C8 D8 f科月外9修必正本
    夂、申請專利範園 L 一種金線成形凸塊結構，其包含 一基座部份，其固定於一内連線配對的一第一構 件，及 一支幹部份，其中該支幹部份具有一戴斷平面上表 面，用以接觸該内連線配對的一第二構件上_金屬 塾’且其中該支幹部份比該基座部份更為柔靭， 其中該基座部份包含一第一材料，而該支幹部份包 S —第二材料，且該第二材料比該第一材料更為柔 靭。 、八 2·如申請專利範圍第1項之金線成形凸塊結構，其中該第 一材料係由鎳，銅，鎳合金及銅合金所組成的群組中 選出。 ° 3·如申請專利範圍第1項之金線成形凸塊結構，其中該第 二材料係由一焊料，金，及金合金所組成的群組中選 出。 4·如申請專利範圍第2項之金線成形凸塊結構，其中該第 二材料係由一焊料，金，及金合金所組成的群組中選 出。 5·如申請專利範圍第1項之金線成形凸塊結構，其中該第 一材料包含銅，而該第二材料包含金或一金合金。 6*如申請專利範圍第1項之金線成形凸塊結構，其中至少 e亥支幹的該上表面之直徑小於該基座。 7·如申請專利範圍第1項之金線成形凸塊結構，其中該金 線成形凸塊高度係大於該第二構件上所有銲墊的非共 本紙張尺舰财@ 規格(210 x 297公爱） 1279881 A8 B8 C8
    1279881 A8 Βδ .C8
    !279881 申請專利範圍 凸塊來接合到該個別金屬墊上， 其中该基座部份包含一第一材料，而該支幹部份包 含一第二材料，且該第二材料比該第一材 靭。 又馮柔 19·如申請專利範圍第18項之方法，其中該第一及該第 構件中的一個包含一積體電路晶片。 2〇·如申請專利範圍第18項之方法，其中該第一及該第 構件中的一個包含一印刷電路基板。 包 21.—種用以製作一覆晶半導體裝置封裝的方 含： 八 提供複數個金線成形凸塊在一積體電路晶片上指定 ，置的接觸位置處，每個該金線成形凸塊具有一^座 部份’及具有比該基座部份更為柔靭的—支幹部份， 該支幹部份具有一橫斷平面上表面； 提供-基板，其在該基板的—表面上的指定位置處 具有複數個接合塾，該個別指定的位置係在該積體電 路晶片及基板上相對應； 並列該積體電路晶片及該基板，使得該 塊及銲墊可對準，·及 ° 將該積體電路晶片及該基板放置在一起，其條件為 促進該凸塊來接合到該個別金屬墊上， 其中該基座部份包含一第一材料，而該支幹部份包 ::第二材料’且該第二材料比該第一材料更為柔 10X297公釐） 標準，S) Α4規i 4 1279881 A8 B8
    22. —種金線成形凸塊結構，其包含 基座份，其固定於一内連線配一 件，及 ^弟一構 =幹部份，其中該支幹部份具有—截斷平面上表 八配置用以接觸該内連線配對的一第二構一 ，屬塾’且其中該支幹部份之高度為至少15倍於續基 =部份之高度，藉此該支幹部份比該基座部份更為; 23. 如申請專利範圍第22項之金線成形凸塊結構，其中該 基座部分包含一第一材料，而該支幹部*包含二第^ 材料’且該第二材料比該第一材料更為柔韌。 一 24. —申請專利範圍第22項之金線成形凸塊結構，其中該 第-材料係由鎳，銅’鎳合金及銅合金所組組 中選出。 ^ 21如申請專利範圍第2 3項之金線成形凸塊結構，其中該 第二材料係由一焊料，金，及金合金所組成的群组 選出。 '' 26.=申請專利範圍第24項之金線成形凸塊結構，其中該 第二材料係由一焊料，金，及金合金所組成的群組中 選出。 27·如申請專利範圍第23項之金線成形凸塊結構，其中該 第一材料包含銅，而該第二材料包含金或一金合金。 28·如申請專利範圍第22項之金線成形凸塊結構，其中至 少該支幹的該上表面之直徑小於該基座。 -5 -
    申請專利範
    29.如申請專利範圍第22項之金線成形凸塊結構，其中該 金線成形凸塊高度係大於該第二構件上 共平面性的最大範圍。 ' 30.如申請專利範圍第22項之金線成形凸塊結構，其中該 凸塊基座部份包含一材料，其具有與該支幹的材料類 似的符合特性，且其中至少該支幹的該上表面之直徑 小於該基座。 31·如中請專利範圍第3〇項之金線成形凸塊結構，其中該 凸塊基座部份包含-具有與該支幹的材料㈣的柔勒 特性之材料。 32. 如巾請專利範圍第22項之金線成形凸塊結構，其中該 凸塊基座部份包含與該支幹部份相同的材料。 33. 如申請專利範圍•第22項之金線成形凸塊結構，其中至 少該凸塊基座#份與該凸塊支幹部份中的一個包含金 或一金合金。 , 34. 如申請專利範圍第3〇項之金線成形凸塊結構，其中該 金線成形凸塊支幹高度大於該第二構件上所有銲墊的 非共平面性的最大範圍。 35. 如申請專利範圍第2 2項之金線成形凸塊結構，其中該基 座部份係固定於暴露在一鈍化材料中一開口内的導電位 置，且其中該基座部份的一直徑係小於該鈍化材料中該開 口直徑的0.8 5倍。 36. —種用以在一接觸表面上形成一金線成形凸塊的方法，其 包含在該表面上形成一凸塊基座部份，由該基座上端拉伸
    出一通常為錐形的尾端，並截斷該尾端來形成具有一平面 横斷上表面，及具有由該基座部份的上端到該上表面之長 度為至少1.5倍於該基座部份之一高度的支幹部份。 37·如申請專利範圍第36項之方法，其中至少該尾端部份係 使用一打線接合工具形成，而該錐形尾端的尺寸使得在截 斷之後，所得到的該支幹部份的上表面具有一不大於該基 座直徑之直徑。 38·如中請專利範E第36項之方法，其中該錐形尾端之尺寸 使得在截斷之後，所得到的該支幹部份的上表面具有一小 於一指定導線直徑之兩倍之直徑。 39. 如申請專利範圍第36項之方法，其中該截斷包含化學 機械研磨。 40. —種用以在一電子封裝的一第一構件及一第二構件之 間形成一内連線的方法，其包含： 提供複數個金線成形凸塊在該第一構件上指定位置 的接觸位置處，每個該金線成形凸塊具有一基座部份 及一具有一平面橫斷上表面之支幹部分，該支幹部分 具有一平面橫斷上表面，其中該支幹部份之高度為至 > 1 . 5倍於該基座部份之高度，藉此該支幹部份比該基 座部份更為柔韌； 提供一第二構件，其在該第二構件的一表面上的指 定位置處具有複數個接合墊，該個別指定的位置係在 該第一及第二構件上相對應； 並列該第一及第二構件，使得該相對應的凸塊及銲 1279881 申請專利範圍 墊可對準；及 將該第-及第二構件放置在—起，其條件 凸塊來接合到該個別金屬墊上。 退5亥 41.如申請專利範圍第40項之方法，彡中該第—及 構件中的一個包含一積體電路晶片。 一 42·如申請專利範圍第4〇項之方法，其中該第一及1 構件中的一個包含一印刷電路基板。 第— 一種用以製作一覆晶半導體裝置封裝的方法， 含： ，、 提供複數個金線成形'凸塊在一積體電路晶片上扑^ 位置的接觸位置處，每個該金線成形凸塊具有一 部份及一具有一平面橫斷上表面之支幹部分，該3 部分具有一平面橫斷上表面，其中該支幹部份=高 為至少1.5倍於該基座部份之高度，藉此該支幹部份 該基座部份更為柔韌； 提供一基板，其在該基板的一表面上的指定位置處 具有複數個接合墊，該個別指定的位置係在該積體 路晶片及基板上相對應； 並列該積體電路晶片及該基板，使得該相對應的 塊及銲墊可對準；及 將該積體電路晶片及該基板放置在一起，其條件為 促進該凸塊來接合到該個別金屬墊上。 43. 包 度 比 電 凸 本紙張尺度適用中國國豕標準(CNS) A4規格(210X297公董）
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JP2005503660A (ja) 2005-02-03
EP1382057A2 (en) 2004-01-21
WO2002069372A8 (en) 2003-02-20
WO2002069372A3 (en) 2003-10-30
KR20030080033A (ko) 2003-10-10
US20020151228A1 (en) 2002-10-17
US7407877B2 (en) 2008-08-05
US20050221535A1 (en) 2005-10-06
US20050218515A1 (en) 2005-10-06

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