TWI264040B - Method to restore hydrophobicity in dielectric films and materials - Google Patents
Method to restore hydrophobicity in dielectric films and materialsInfo
- Publication number
- TWI264040B TWI264040B TW090115288A TW90115288A TWI264040B TW I264040 B TWI264040 B TW I264040B TW 090115288 A TW090115288 A TW 090115288A TW 90115288 A TW90115288 A TW 90115288A TW I264040 B TWI264040 B TW I264040B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric films
- silica
- damaged
- materials
- methods
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 239000003989 dielectric material Substances 0.000 abstract 2
- 230000002209 hydrophobic effect Effects 0.000 abstract 2
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US21421900P | 2000-06-23 | 2000-06-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI264040B true TWI264040B (en) | 2006-10-11 |
Family
ID=22798248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090115288A TWI264040B (en) | 2000-06-23 | 2001-06-22 | Method to restore hydrophobicity in dielectric films and materials |
Country Status (9)
Country | Link |
---|---|
US (3) | US7029826B2 (zh) |
EP (1) | EP1292973B1 (zh) |
JP (2) | JP5307963B2 (zh) |
KR (1) | KR100797202B1 (zh) |
CN (1) | CN1279588C (zh) |
AU (1) | AU2001266998A1 (zh) |
CA (1) | CA2413592A1 (zh) |
TW (1) | TWI264040B (zh) |
WO (1) | WO2002001621A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414018B (zh) * | 2007-02-20 | 2013-11-01 | Lam Res Corp | 低介電常數之介電膜的修復方法 |
TWI448526B (zh) * | 2008-08-15 | 2014-08-11 | Shinetsu Chemical Co | 基板之接合方法及三維半導體裝置 |
Families Citing this family (104)
Publication number | Priority date | Publication date | Assignee | Title |
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GB9904427D0 (en) | 1999-02-26 | 1999-04-21 | Trikon Holdings Ltd | Method treating an insulating layer |
WO2001085308A2 (en) | 2000-05-05 | 2001-11-15 | Extraction Systems, Inc. | Filters employing both acidic polymers and physical-absorption media |
CA2413592A1 (en) | 2000-06-23 | 2002-01-03 | Nigel P. Hacker | Method to restore hydrophobicity in dielectric films and materials |
US7174303B2 (en) * | 2000-07-31 | 2007-02-06 | Uappoint, Inc | Customer driven, sponsor controlled network-based graphical scheduling system and method |
WO2003077032A1 (en) * | 2002-03-04 | 2003-09-18 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
WO2003107411A2 (en) * | 2002-06-14 | 2003-12-24 | Trikon Technologies Limited | Dielectric film |
US6933246B2 (en) | 2002-06-14 | 2005-08-23 | Trikon Technologies Limited | Dielectric film |
US7005390B2 (en) * | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
US7709371B2 (en) | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
EP1588411A4 (en) * | 2003-01-25 | 2008-10-01 | Honeywell Int Inc | REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS |
US6921727B2 (en) | 2003-03-11 | 2005-07-26 | Applied Materials, Inc. | Method for modifying dielectric characteristics of dielectric layers |
TWI257120B (en) * | 2003-06-18 | 2006-06-21 | Fujitsu Ltd | Method for manufacturing semiconductor device |
US20040266184A1 (en) * | 2003-06-30 | 2004-12-30 | Ramachandrarao Vijayakumar S | Post-deposition modification of interlayer dielectrics |
US7425505B2 (en) * | 2003-07-23 | 2008-09-16 | Fsi International, Inc. | Use of silyating agents |
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2001
- 2001-06-19 CA CA002413592A patent/CA2413592A1/en not_active Abandoned
- 2001-06-19 US US10/312,295 patent/US7029826B2/en not_active Expired - Fee Related
- 2001-06-19 EP EP01944605.3A patent/EP1292973B1/en not_active Expired - Lifetime
- 2001-06-19 CN CNB018145507A patent/CN1279588C/zh not_active Expired - Fee Related
- 2001-06-19 AU AU2001266998A patent/AU2001266998A1/en not_active Abandoned
- 2001-06-19 WO PCT/US2001/019466 patent/WO2002001621A2/en active Search and Examination
- 2001-06-19 JP JP2002505668A patent/JP5307963B2/ja not_active Expired - Fee Related
- 2001-06-19 KR KR1020027017542A patent/KR100797202B1/ko not_active IP Right Cessation
- 2001-06-22 TW TW090115288A patent/TWI264040B/zh not_active IP Right Cessation
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2005
- 2005-11-28 US US11/287,992 patent/US8440388B2/en not_active Expired - Lifetime
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2007
- 2007-04-05 US US11/784,081 patent/US7858294B2/en not_active Expired - Lifetime
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI414018B (zh) * | 2007-02-20 | 2013-11-01 | Lam Res Corp | 低介電常數之介電膜的修復方法 |
TWI448526B (zh) * | 2008-08-15 | 2014-08-11 | Shinetsu Chemical Co | 基板之接合方法及三維半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN1279588C (zh) | 2006-10-11 |
KR100797202B1 (ko) | 2008-01-23 |
JP2004511896A (ja) | 2004-04-15 |
US20040013858A1 (en) | 2004-01-22 |
US8440388B2 (en) | 2013-05-14 |
US7858294B2 (en) | 2010-12-28 |
US7029826B2 (en) | 2006-04-18 |
EP1292973A2 (en) | 2003-03-19 |
US20070190735A1 (en) | 2007-08-16 |
CA2413592A1 (en) | 2002-01-03 |
JP2012231164A (ja) | 2012-11-22 |
AU2001266998A1 (en) | 2002-01-08 |
WO2002001621A3 (en) | 2002-03-21 |
WO2002001621A2 (en) | 2002-01-03 |
CN1502122A (zh) | 2004-06-02 |
KR20030062237A (ko) | 2003-07-23 |
EP1292973B1 (en) | 2015-09-09 |
JP5307963B2 (ja) | 2013-10-02 |
US20060078827A1 (en) | 2006-04-13 |
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