WO2020168542A1 - 一种球形或角形粉体填料的制备方法、由此得到的球形或角形粉体填料及其应用 - Google Patents

一种球形或角形粉体填料的制备方法、由此得到的球形或角形粉体填料及其应用 Download PDF

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Publication number
WO2020168542A1
WO2020168542A1 PCT/CN2019/075831 CN2019075831W WO2020168542A1 WO 2020168542 A1 WO2020168542 A1 WO 2020168542A1 CN 2019075831 W CN2019075831 W CN 2019075831W WO 2020168542 A1 WO2020168542 A1 WO 2020168542A1
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Prior art keywords
spherical
angular
siloxane
preparation
filler
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PCT/CN2019/075831
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English (en)
French (fr)
Inventor
陈树真
李锐
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湖州五爻硅基材料研究院有限公司
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Application filed by 湖州五爻硅基材料研究院有限公司 filed Critical 湖州五爻硅基材料研究院有限公司
Priority to PCT/CN2019/075831 priority Critical patent/WO2020168542A1/zh
Priority to CN201980016658.2A priority patent/CN111819247A/zh
Priority to CN201980016661.4A priority patent/CN111819248B/zh
Priority to KR1020217029021A priority patent/KR20210125546A/ko
Priority to PCT/CN2019/109108 priority patent/WO2020168719A1/zh
Priority to JP2021572692A priority patent/JP7391401B2/ja
Priority to US17/430,573 priority patent/US20220135745A1/en
Priority to CN201980016674.1A priority patent/CN111801808B/zh
Priority to JP2021572694A priority patent/JP7490255B2/ja
Priority to PCT/CN2019/123337 priority patent/WO2020168784A1/zh
Priority to KR1020217029022A priority patent/KR20210127198A/ko
Priority to US17/432,548 priority patent/US20220153936A1/en
Priority to CN202080001766.5A priority patent/CN111801296A/zh
Priority to PCT/CN2020/071640 priority patent/WO2020168856A1/zh
Publication of WO2020168542A1 publication Critical patent/WO2020168542A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/12—Powdering or granulating
    • C08J3/128—Polymer particles coated by inorganic and non-macromolecular organic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/07—Parts immersed or impregnated in a matrix
    • B32B2305/076—Prepregs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards

Definitions

  • the invention relates to the packaging of semiconductors, and more particularly to a method for preparing spherical or angular powder filler, the spherical or angular powder filler obtained therefrom, and its application.
  • packaging materials such as plastic packaging materials, chip adhesives, underfill materials and chip carriers are required.
  • passive components, semiconductor components, electro-acoustic devices, display devices, optical devices, and radio frequency devices must also be used when assembling devices (high density inerconnect (HDI), high-frequency high-speed boards, and motherboards).
  • HDI high density inerconnect
  • circuit boards These packaging materials and circuit boards are generally mainly composed of organic polymers and fillers such as epoxy resin, aromatic polyether, fluororesin, etc.
  • the filler is mainly angular or spherical silica, and its main function is to reduce The thermal expansion coefficient of organic polymers.
  • the existing fillers are made of spherical or angular silica for tight packing and gradation.
  • the chemical structure of the silica is the Q unit of Si, that is, SiO 4 -.
  • the signal frequency used by semiconductors is getting higher and higher, and the high-speed and low-loss signal transmission requires fillers with low dielectric constant and low dielectric loss.
  • the dielectric constant (also known as dielectric constant) and dielectric loss (also known as dielectric loss) of a material basically depend on the chemical composition and structure of the material. Silicon dioxide has its inherent dielectric constant and dielectric loss. Therefore, the existing filler cannot meet the requirements of lower dielectric rate and low dielectric loss.
  • the filler is required to have low radioactivity.
  • the purity of current spherical or angular silica largely depends on the purity of natural minerals. Therefore, the existing packing cannot meet the requirement of low radioactivity.
  • the present invention aims to provide a method for preparing spherical or angular powder filler, the spherical or angular powder filler obtained therefrom, and its application.
  • the filler thus provided has low dielectric constant, low dielectric loss, and no conductive foreign matter , No coarse particles and low radioactivity.
  • the silica of the spherical or angular powder filler of the present invention includes T units, and the introduction of organic groups R greatly reduces the dielectric rate and dielectric loss.
  • the T unit since the T unit has only three SiOSi bridging points, the coefficient of thermal expansion is higher than that of the Q unit of silica. Therefore, an appropriate amount of Q units can be introduced as needed to adjust the balance of the dielectric constant, the dielectric loss and the thermal expansion coefficient. Specifically, by performing the heat treatment under an inert gas atmosphere or a vacuum condition, the problem that the organic group may be oxidized and decomposed to form a polar group due to the treatment under an air atmosphere is avoided.
  • the present invention specifically limits the heat treatment temperature to 250 degrees or more to promote the condensation reaction of silanol groups. Although the higher the temperature, the faster and more sufficient the condensation is, but the present invention specifically limits the heat treatment temperature to 750 degrees or less to avoid thermal decomposition of carbosilane itself.
  • the introduction of D or M units can reduce the dielectric constant and dielectric loss, but will increase the thermal expansion coefficient, so the introduction amount should be adjusted as needed.
  • the total content of Q units, D units, and/or M units in the spherical or angular siloxane is ⁇ 20% by weight.
  • the spherical or angular siloxane provided in step S1 further contains silica particles.
  • silica particles also referred to as fine silica powder
  • the total content of silica particles in the spherical or angular siloxane is ⁇ 70% by weight.
  • the average particle size of the spherical or angular siloxane provided in step S1 is 0.5-50 microns. In a preferred embodiment, the average particle size of the spherical or angular siloxane is 2 microns.
  • the composition of the spherical or angular siloxane is 97% T-unit spherical siloxane and 3% Q-unit or D-unit spherical siloxane. In a preferred embodiment, the composition of the spherical or angular siloxane is 100% T unit spherical siloxane. In a preferred embodiment, the composition of the spherical or angular siloxane is 100% T-unit angular siloxane. In a preferred embodiment, the composition of spherical or angular siloxane is 70% T-unit angular siloxane and 30% silica particles.
  • R 1 in the T unit is methyl or vinyl.
  • the heat treatment is achieved by electric heating or microwave heating, which causes the Si-OH in the spherical or angular siloxane to condense to produce a SiOSi structure.
  • the equation of the condensation reaction is as follows:
  • R', R", R"' are hydrogen atoms or independently selectable organic groups R 1 (also called hydrocarbon groups) with 1 to 18 carbon atoms.
  • the heat treatment temperature in step S2 is 280-650 degrees. It should be understood that the higher the temperature, the shorter the time required, and the lower the temperature, the longer the time required. In a preferred embodiment, the heat treatment time is between 1-20 hours.
  • the preparation method further includes adding a treating agent to treat the condensed siloxane, so as to promote the condensation of silanol groups in the condensed siloxane to obtain a spherical or angular powder filler.
  • the treatment agent is used to promote the new silanol groups that may be generated in the condensed siloxane after the condensation heat treatment, thereby further reducing the dielectric rate and the dielectric loss.
  • the treatment agent includes a silane coupling agent
  • the silane coupling agent is (R 7 ) a (R 8 ) b Si(M) 4-a- b
  • the silane coupling agent is a silane coupling agent with free radical polymerization reaction, such as vinyl silane coupling agent, etc.; a silane coupling agent that reacts with epoxy resin, such as epoxy silane coupling agent, amino silane Coupling agents, etc.; Hydrocarbyl silane coupling agents with high affinity for hydrophobic resins, such as dimethyl dimethoxy silane, diphenyl dimethoxy silane, phenyl silane coupling agents, long chain alkyl Silane coupling agent, etc. More preferably, the silane coupling agent is selected from at least one of the following coupling agents: dimethyldimethoxysilane, methyltrimethoxysilane, and vinyltrimethoxysilane.
  • the treatment agent includes disilazane, which is (R 9 R 10 R 11 )SiNHSi(R 12 R 13 R 14 ), R 9 , R 10 , R 11 , R 12 , R 13 , R 14 is an independently selectable hydrocarbon group of 1 to 18 carbon atoms or hydrogen atom. More preferably, the disilazane is hexamethyldisilazane.
  • the weight percentage of the treatment agent is 0.5-50wt%. In a preferred embodiment, the weight percentage addition amount of the treatment agent is 2-8 wt%. In a preferred embodiment, the weight percentage addition amount of the treatment agent is 4 wt%. In a preferred embodiment, the silanol in the condensed siloxane is condensed under the condition of heating at 180 degrees for 6 hours.
  • the preparation method includes using dry or wet sieving or inertial classification to remove coarse particles of 75 microns or more in the spherical or angular powder filler.
  • coarse particles above 55 microns in the spherical or angular powder filler are removed.
  • coarse particles above 45 microns in the spherical or angular powder filler are removed.
  • coarse particles larger than 20 microns in the spherical or angular powder filler are removed.
  • coarse particles larger than 10 microns in the spherical or angular filler are removed.
  • coarse particles of 5 microns or more in the spherical or angular powder filler are removed.
  • coarse particles larger than 3 microns in the spherical or angular powder filler are removed.
  • coarse particles of 1 micron or more in the spherical or angular powder filler are removed.
  • the present invention also provides a spherical or angular powder filler obtained according to the above preparation method.
  • the spherical or angular powder filler has a particle size of 0.1-50 microns, and the 200° volatile moisture content of the spherical or angular powder filler is less than Or equal to 3000ppm.
  • the particle size is 0.5-30 microns.
  • the present invention uses smaller molecular silane coupling agent or disilazane to block internal cracks, which can reduce the water content of the powder, thereby avoiding the increase in the dielectric rate and the dielectric loss.
  • the water content of the powder of the present invention can be characterized by the Karl Fischer water content when heated at 200 degrees.
  • the measurement result shows that the dielectric constant of the spherical or angular powder filler of the present invention at 500 MHz is only 2.5-2.8, which is less than 3, while the dielectric constant of the existing silica filler with Q units is about 3.8-4.5. Therefore, the spherical or angular powder filler of the present invention has a greatly reduced dielectric constant and can meet the material requirements of high-frequency signals in the 5G era.
  • the measurement results show that the dielectric loss of the spherical or angular powder filler of the present invention at 500 MHz is only 0.0005 to 0.002, which is less than 0.005, while the current dielectric loss of the silica filler of Q units is about 0.003-0.01. Therefore, the spherical or angular powder filler of the present invention has greatly reduced dielectric loss, and can meet the material requirements of high-frequency signals in the 5G era.
  • the measurement results show that the thermal expansion coefficient of the spherical or angular powder filler of the present invention is 5-15 ppm, while the thermal expansion coefficient of the existing fused silica is about 0.5 ppm, and that of crystalline silica (quartz) is 8 to 13 ppm. Therefore, the thermal expansion coefficient of the spherical or angular powder filler of the present invention is equivalent to that of general inorganic fillers, and can meet the material requirements of high-frequency signals in the 5G era.
  • the present invention also provides an application of the spherical or angular powder filler according to the above, wherein the spherical or angular powder fillers of different particle diameters are tightly packed in the resin to form a composite material.
  • the composite material is suitable for semiconductor packaging materials, circuit boards and intermediate semi-finished products.
  • the packaging material is plastic packaging material, patch glue, bottom potting material, or chip carrier.
  • the molding compound is DIP package molding compound, SMT package molding compound, MUF, FO-WLP, FCBGA molding compound.
  • the circuit board is an HDI, a high-frequency high-speed board, or a motherboard.
  • thermal expansion coefficient of the composite material can be approximately calculated by the following formula 1:
  • ⁇ the thermal expansion coefficient of the composite material
  • V 1 the volume fraction of the resin
  • ⁇ 1 the thermal expansion coefficient of the resin
  • V 2 the volume fraction of the filler
  • ⁇ 2 the thermal expansion coefficient of the filler.
  • the thermal expansion coefficient ⁇ 1 of the resin is 60 to 120 ppm.
  • the thermal expansion coefficient ⁇ 2 of the spherical or angular powder filler of the present invention is much lower than the thermal expansion coefficient of the resin at 5 to 15 ppm, which can reduce the cured resin like the existing inorganic fillers.
  • the thermal expansion coefficient of the composition matches the thermal expansion of the wire metal or wafer. Therefore, by adjusting the volume fraction of the resin and the spherical or angular powder filler, the thermal expansion coefficient required by the composite material can be designed as required to form the packaging material, the circuit board and the intermediate semi-finished products.
  • the dielectric permittivity of the composite material can be approximately calculated by the following formula 2:
  • ⁇ the dielectric permittivity of the composite material
  • V 1 the volume fraction of the resin
  • ⁇ 1 the dielectric permittivity of the resin
  • V 2 the volume fraction of the filler
  • ⁇ 2 the dielectric permittivity of the filler.
  • the required dielectric rate of the composite material can be designed as required to form the packaging material, the circuit board and the intermediate semi-finished products.
  • the dielectric loss of the composite material is determined by the dielectric loss of the resin and filler, and the number of polar groups on the filler surface.
  • the spherical or angular powder filler according to the present invention has a low dielectric constant, and the less polar groups on the surface of the filler, therefore, the composite material has a low dielectric loss.
  • the filler obtained by the preparation method of the spherical or angular powder filler of the present invention has a low dielectric constant and low dielectric loss.
  • the raw materials of the preparation method are all organic materials, it does not involve the conventionally used angular crushed quartz, etc., and can be refined by industrial methods such as distillation.
  • the spherical or angular powder filler thus formed does not contain radioactive elements such as uranium and thorium. Meet the requirements of no conductive foreign matter, no coarse particles, and low radioactivity.
  • the preparation method of the present invention can appropriately adjust the synthesis parameters to produce spherical or angular powder fillers with a particle size of 0.1-50 microns.
  • the average particle size was measured with HORIBA's LA-700 laser particle size distribution analyzer.
  • the solvent is isopropanol;
  • the specific surface area is measured with SHIMADZU FlowSorbIII2305;
  • the true specific gravity is determined by MicrotracBEL's BELPycno;
  • the thermal expansion coefficient of the filler sample is calculated from the epoxy resin with known thermal expansion coefficient and true specific gravity, and the true specific gravity of the filler sample is calculated by measuring the thermal expansion coefficient of a resin test piece containing a certain amount of filler.
  • the content of uranium and thorium was determined by Agilent 7700X ICP-MS.
  • the sample preparation method is to prepare the sample with hydrofluoric acid after burning at 800 degrees;
  • the amount of evaporated water at 200°C is measured by Mitsubishi Chemical's CA-310 Karl Fischer automatic analyzer with heated vaporizer.
  • the content of Q, T, D, and M units is measured from the integrated area (Q unit) of the spike in the range of -80 to -120 ppm on the solid 28 Si-NMR spectrum, and the integrated area of the spike (T unit) in the range of -30 to -80 ppm. ), the front integrated area (D unit) in the range of -10 to -30 ppm, and the front integrated area (M unit) in the range of +20 to -10 ppm, calculated.
  • the NMR instrument used is JEOL's ECS-400; Reference: Separation and Purification Technology Volume 25, Issues 1–3, 1 October 2001, Pages 391-397, 29 Si NMR and Si2p XPS correlation in polysiloxane membranes prepared by plasma enhanced chemical vapor deposition .
  • the dielectric rate and dielectric loss are measured with the KEYCOM perturbation method, the sample hole-blocked cavity resonance method, the dielectric rate and dielectric loss measuring device Model No. DPS18.
  • methyltrichlorosilane or methyltrimethoxysilane and silica After mixing methyltrichlorosilane or methyltrimethoxysilane and silica, it is added to water to obtain a white precipitate. After washing with deionized water, the precipitate was ground to 2 micron fine powder with a sand mill for use in the examples and comparative examples for subsequent heat treatment.
  • the treated powder was mixed with 6% methyltrimethoxysilane, and then heated at 180 degrees for 6 hours.
  • the powder was separated by cyclone to remove large particles larger than 10 microns to obtain samples of Examples and Comparative Examples.
  • the analysis results of the samples are listed in Table 1.
  • the dielectric rate of the sample samples obtained according to Example 1 to Example 5 are all less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss of the filler in the 5G era (Less signal loss) requirements.
  • the samples of Comparative Examples 1-5 that were heat-treated in an air atmosphere had a dielectric rate greater than 3 and a dielectric loss greater than 0.005, which did not meet the low dielectric rate (small signal delay) and low dielectric loss (signal delay) of the filler in the 5G era. Less loss) requirements.
  • Spherical siloxane with an average particle size of 2 microns with 97% of T units (R 1 being methyl) and 3% of Q units is heat-treated under air or nitrogen atmosphere.
  • the treated powder does not use a treatment agent for surface treatment, and is directly separated and removed by a cyclone to remove large particles larger than 10 microns to obtain samples of Examples and Comparative Examples.
  • the analysis results of the samples are listed in Table 2.
  • the dielectric rate of the example sample obtained according to Example 6 is less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss (less signal loss) of the filler in the 5G era.
  • the sample of Comparative Example 6 heat-treated in an air atmosphere has a dielectric rate greater than 3 and a dielectric loss greater than 0.005, which does not meet the low dielectric rate (small signal delay) and low dielectric loss (small signal loss) of the filler in the 5G era ) Requirements.
  • T units (R 1 is a methyl group) 97%, D units (R 2, R 3 are methyl) 3% of the average particle size of 2 microns spherical silicone heat treatment in an air or nitrogen atmosphere.
  • the treated powder was mixed with 4% hexamethyldisilazane, and then heated at 180 degrees for 6 hours.
  • the powder was separated by cyclone to remove large particles above 10 microns to obtain an example.
  • the analysis results of the samples are listed in Table 3.
  • the dielectric rate of the example sample obtained according to Example 7 is less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss (less signal loss) of the filler in the 5G era.
  • the sample of Comparative Example 7 heat-treated in an air atmosphere has a dielectric rate greater than 3 and a dielectric loss greater than 0.005, which does not meet the low dielectric rate (small signal delay) and low dielectric loss (small signal loss) of the filler in the 5G era ) Requirements.
  • An angular siloxane with an average particle size of 2 microns, 70% of T unit (R 1 is methyl) and 30% of silica fine powder (fumed white carbon black) is heat-treated in air or nitrogen atmosphere.
  • the treated powder was mixed with 5% dimethyldimethoxysilane, and then heated at 180 degrees for 6 hours.
  • the powder was separated by a cyclone to remove large particles above 10 microns to obtain examples.
  • the analysis results of the samples are listed in Table 4.
  • the dielectric rate of the example sample obtained according to Example 8 is less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss (less signal loss) of the filler in the 5G era.
  • the sample of Comparative Example 8 heat-treated in an air atmosphere has a dielectric rate greater than 3 and a dielectric loss greater than 0.005, which does not meet the low dielectric rate (small signal delay) and low dielectric loss (small signal loss) of the filler in the 5G era ) Requirements.
  • Spherical siloxane with an average particle size of 2 microns and 100% of T unit (R 1 is a methyl group) is heat-treated in a nitrogen atmosphere.
  • the treated powder is treated with 8% vinyltrimethoxysilane, mixed with 4% hexamethyldisilazane, and then heated at 180 degrees for 6 hours.
  • the powder is separated by cyclone to remove large particles above 10 microns Example 7 was obtained, and the analysis results are listed in Table 5.
  • Spherical siloxane with an average particle size of 2 microns and 100% of T unit (R 1 is a methyl group) is heat-treated in a nitrogen atmosphere.
  • the treated powder is treated with a mixture of 8% methyltrimethoxysilane and 4% hexamethyldisilazane, and then heated at 180 degrees for 6 hours, the powder is separated by cyclone to remove large particles above 10 microns Example 8 was obtained, and the analysis results are listed in Table 5.
  • the dielectric rate of the example samples obtained according to Example 9 to Example 10 are all less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss of the filler in the 5G era (Less signal loss) requirements.
  • the treated powder was mixed with 4% hexamethyldisilazane, and then heated at 180 degrees for 6 hours.
  • the powder was separated by cyclone to remove large particles larger than 10 microns to obtain Example 11.
  • the analysis results are listed in Table 6.
  • Spherical siloxane with an average particle size of 2 microns and 100% of T unit (R 1 is a methyl group) is heat-treated in a nitrogen atmosphere.
  • the treated powder was mixed with 4% methyltrimethoxysilane, and then heated at 180 degrees for 6 hours.
  • the powder was separated by cyclone to remove large particles larger than 10 microns to obtain Example 12.
  • the analysis results are listed in Table 6.
  • the dielectric rate of the example samples obtained according to Example 11 to Example 12 are all less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss of the filler in the 5G era (Less signal loss) requirements.
  • the dielectric rate of the example samples obtained according to Example 13 to Example 17 are all less than 3, and the dielectric loss is less than 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss of the filler in the 5G era (Less signal loss) requirements.
  • the dielectric rate of the example samples obtained according to Examples 18 to 19 is less than 3, and the dielectric loss does not exceed 0.005, so as to meet the low dielectric rate (small signal delay) and low dielectric loss of the filler in the 5G era ( Less signal loss) requirements.
  • the samples of the examples obtained in the foregoing Examples 1 to 19 may be subjected to a vertex cutting step to remove coarse particles. Specifically, methods such as dry or wet sieving or inertial classification are used to remove 75, 55, 45, 20, 10, 5, 3, or 1 micron or more of the spherical powder filler according to the size of the semiconductor chip. Coarse particles.
  • the samples of the examples obtained in Examples 1 to 19 were dissolved in hydrofluoric acid by ICP-MS and it was found that the contents of uranium and thorium were both below 0.5 ppb.

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Abstract

提供一种球形或角形粉体填料的制备方法，包括T单位的球形或角形硅氧烷， T单位＝R 1SiO 3-，R 1为氢原子或可独立选择的碳原子1至18有机基；在惰性气体氛围或真空条件下，对该球形或角形硅氧烷进行热处理，热处理温度为250℃以上至750℃以下，使得球形或角形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷，最终获得球形或角形粉体填料。还提供一种根据上述制备方法得到的球形或角形粉体填料以及一种上述球形或角形粉体填料的应用，所述填料具有低诱电率、低诱电损失、无导电异物、无粗大颗粒和低放射性。

Description

一种球形或角形粉体填料的制备方法、由此得到的球形或角形粉体填料及其应用 技术领域
本发明涉及半导体的封装，更具体地涉及一种球形或角形粉体填料的制备方法、由此得到的球形或角形粉体填料及其应用。
背景技术
在半导体后端工序的封装工艺中，需要用到塑封料、贴片胶、底灌料和芯片载板等封装材料。此外，将被动元件、半导体元件、电声器件、显示器件、光学器件和射频器件等组装成设备时还须使用(高密度互连板(high density inerconnect，HDI)、高频高速板和母板等电路板。这些封装材料和电路板一般主要由环氧树脂，芳香族聚醚，氟树脂等有机高分子和填料所构成，其中的填料主要是角形或球形二氧化硅，其主要功能是降低有机高分子的热膨胀系数。现有的填料选用球形或角形二氧化硅进行紧密充填级配，该二氧化硅的化学结构是Si的Q单位，即SiO 4-。
一方面，随着技术的进步，半导体所用的信号频率越来越高，信号传输速度的高速化低损耗化要求填料具有低诱电率和低诱电损失。另一方面，材料的诱电率(又称介电常数)和诱电损失(又称介电损耗)基本取决于材料的化学组成和结构，二氧化硅有其固有的诱电率和诱电损失的值，因此，现有的填料无法满足更低诱电率和低诱电损失的要求。
同样地，随着技术的进步，半导体集成度越来越高，尺寸越来越小要求填料具有高纯度，其中无导电异物且无粗大颗粒。但是，现在的球形或角形二氧化硅很难避免粗大颗粒和导电异物的混入。而且，粗大颗粒和导电异物一旦混入基本上不能干法除去。因此，现有的填料无法满足无导电异物且无粗大颗粒的要求。
对于半导体记忆体要求填料具有低放射性。但是，现在的球形或角形二氧化硅的纯度很大程度依靠天然矿物本身的纯度。因此，现有的填料无法满足低放射性的要求。
发明内容
本发明旨在提供一种球形或角形粉体填料的制备方法、由此得到的球形或角形粉体填料及其应用，由此提供的填料具有低诱电率、低诱电损失、无导电异物、无粗大颗粒和低放射性。
本发明提供一种球形或角形粉体填料的制备方法，包括步骤：S1，提供包括T单位的球形或角形硅氧烷，其中，T单位＝R 1SiO 3-，R 1为氢原子或可独立选择的碳原子1至18的有机基；以及S2，在惰性气体氛围或真空条件下，对该球形或角形硅氧烷进行热处理，热处理温度为250度以上至750度以下，以使得球形或角形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷，最终获得球形或角形粉体填料。
与现有的仅含Q单位的二氧化硅填料不同，本发明的球形或角形粉体填料的二氧化硅包括T单位，通过引入有机基R大大降低诱电率和诱电损失。另外，由于T单位只有三个SiOSi架桥点，热膨胀系数比Q单位的二氧化硅高，因此可根据需要导入适量Q单位来调整诱电率、诱电损失和热膨胀系数的平衡。具体地，通过在在惰性气体氛围或真空条件下进行热处理，避免了在空气氛围下进行处理而可能导致的有机基氧化分解形成极性基团的问题。本发明将热处理温度具体限定在250度以上，以促使硅羟基的缩合反应的进行。虽然温度越高缩合越快越充分，但是本发明将热处理温度具体限定在750度以下，以避免碳硅烷本身的热分解。
优选地，步骤S1中提供的该球形或角形硅氧烷还含有Q单位、D单位、和/或M单位，其中，Q单位＝SiO 4-，D单位＝R 2R 3SiO 2-，M单位＝R 4R 5R 6SiO 2-，R 2，R 3，R 4，R 5，R 6分别为氢原子或可独立选择的碳原子1至18的烃基。应该理解，Q单位的导入能降低热膨胀系数，但会导致诱电率和诱电损失上升，所以导入量根据需要进行调节。另外，D或M单位的导入能降低诱电率和诱电损失，但会导致热膨胀系数上升，所以导入量根据需要进行调节。优选地，Q单位、D单位、和/或M单位在该球形或角形硅氧烷中的总和含量≤20％重量百分比。
优选地，步骤S1中提供的该球形或角形硅氧烷还含有二氧化硅粒子。应该理解，二氧化硅粒子(也被称为二氧化硅微粉)的导入能降低热膨胀系数，但会导致诱电率和诱电损失上升，所以导入量根据需要进行调节。优选地，二氧化硅粒子在该球形或角形硅氧烷中的总和含量≤70％重量百分比。
在优选的实施例中，步骤S1中提供的球形或角形硅氧烷的平均粒径为0.5-50微米。在一个优选的实施例中，球形或角形硅氧烷的平均粒径为2微米。
在优选的实施例中，球形或角形硅氧烷的组成为97％的T单位球形硅氧烷和3％的Q单位或D单位球形硅氧烷。在一个优选的实施例中，球形或角形硅氧烷的组成为100％的T单位球形硅氧烷。在一个优选的实施例中，球形或角形硅氧烷的组成为100％的T单位角形硅氧烷。在一个优选的实施例中，球形或角形硅氧烷的组成为70％的T单位角形硅氧烷和30％的二氧化硅粒子。
在一个优选的实施例中，T单位中的R 1为甲基或乙烯基。
优选地，在所述步骤S2中，热处理通过电热加热或微波加热来实现，其使得球形或角形硅氧烷中的Si-OH发生缩合以产生SiOSi结构，该缩合反应的方程式如下：
Figure PCTCN2019075831-appb-000001
其中的R’，R”，R”’为氢原子或可独立选择的碳原子1至18的有机基R 1(又被称为烃基)。
优选地，步骤S2中的热处理温度为280-650度。应该理解，温度越高时所需时间越短，温度越低时所需时间越长。在优选地实施例中，该热处理的时间在1-20小时之间。
优选地，该制备方法还包括加入处理剂对缩合硅氧烷进行处理，以促进缩合硅氧烷中的硅羟基缩合以得到球形或角形粉体填料。具体地，通过处理剂来促进缩合热处理后的缩合硅氧烷中可能产生的新的硅羟基，从而进一步降低诱电率和诱电损失。
优选地，该处理剂包括硅烷偶联剂，该硅烷偶联剂为(R 7) a(R 8) bSi(M) 4-a- b，R 7，R 8为可独立选择的碳原子1至18的烃基、氢原子、或被官能团置换的碳原子1至18的烃基，该官能团选自由以下有机官能团组成的组中的至 少一种：乙烯基，烯丙基，苯乙烯基，环氧基，脂肪族氨基，芳香族氨基，甲基丙烯酰氧丙基，丙烯酰氧丙基，脲基丙基，氯丙基，巯基丙基，聚硫化物基，异氰酸酯丙基；M为碳原子1至18的烃氧基或卤素原子，a＝0、1、2或3，b＝0、1、2或3，a+b＝1、2或3。
优选地，该硅烷偶联剂选择具有自由基聚合反应的硅烷偶联剂，如乙烯基硅烷偶联剂等；和环氧树脂反应的硅烷偶联剂，如环氧硅烷偶联剂，氨基硅烷偶联剂等；和疏水树脂有高亲和性的烃基硅烷偶联剂，如二甲基二甲氧基硅烷，二苯基二甲氧基硅烷，苯基硅烷偶联剂，长链烷基硅烷偶联剂等。更优选地，该硅烷偶联剂选自以下偶联剂中的至少一种：二甲基二甲氧基硅烷、甲基三甲氧基硅烷、乙烯基三甲氧基硅烷。
优选地，该处理剂包括二硅氮烷，该二硅氮烷为(R 9R 10R 11)SiNHSi(R 12R 13R 14)，R 9，R 10，R 11，R 12，R 13，R 14为可独立选择的碳原子1至18的烃基或氢原子。更优选地，该二硅氮烷为六甲基二硅氮烷。
优选地，该处理剂的重量百分比添加量为0.5-50wt％。在优选的实施例中，处理剂的重量百分比添加量为2-8wt％。在一个优选的实施例中，处理剂的重量百分比添加量为4wt％。在一个优选的实施例中，缩合硅氧烷中的硅羟基缩合在180度加热6小时的条件下进行。
优选地，该制备方法包括使用干法或湿法的筛分或惯性分级来除去球形或角形粉体填料中的75微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的55微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的45微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的20微米以上的粗大颗粒。优选地，除去球形或角形填料中的10微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的5微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的3微米以上的粗大颗粒。优选地，除去球形或角形粉体填料中的1微米以上的粗大颗粒。
本发明还提供一种根据上述的制备方法得到的球形或角形粉体填料，该球形或角形粉体填料的粒径为0.1-50微米，该球形或角形粉体填料的200度挥发水分含量小于或等于3000ppm。优选地，该粒径为0.5-30微米。本发明通过较小分子的硅烷偶联剂或二硅氮烷来封堵内部裂缝，可以降低粉体的含水量，从而避免引起诱电率和诱电损失升高。具体地，本发明的粉体的含水量可用200度加热时的卡尔费休水分量来表征。
测定结果表明，500MHz时的本发明的球形或角形粉体填料的诱电率只有2.5-2.8，小于3，而现有的Q单位的二氧化硅填料的诱电率大约为3.8-4.5。因此，本发明的球形或角形粉体填料具有大大降低的诱电率，能够满足5G时代的信号高频的材料要求。
测定结果表明，500MHz时的本发明的球形或角形粉体填料的诱电损失只有0.0005-0.002，小于0.005，而现有的Q单位的二氧化硅填料的诱电损失大约为0.003-0.01。因此，本发明的球形或角形粉体填料具有大大降低的诱电损失，能够满足5G时代的信号高频的材料要求。
测定结果表明，本发明的球形或角形粉体填料的热膨胀系数为5-15ppm，而现有的熔融二氧化硅的热膨胀系数约为0.5ppm，结晶二氧化硅(石英)为8至13ppm。因此，本发明的球形或角形粉体填料的热膨胀系数与一般无机填料的热膨胀系数相当，能够满足5G时代的信号高频的材料要求。
本发明又提供一种根据上述的球形或角形粉体填料的应用，其中，不同粒径的球形或角形粉体填料紧密填充级配在树脂中形成复合材料。优选地，该复合材料适用于半导体封装材料、电路板及其中间半成品。优选地，该封装材料为塑封料、贴片胶、底灌料、或芯片载板。该塑封料为DIP封装形式的塑封料、SMT封装形式的塑封料、MUF，FO-WLP，FCBGA的塑封料。优选地，该电路板为HDI、高频高速板、或母板。
已知地，复合材料的热膨胀系数可由下式1近似计算：
式1：α＝V 1×α 1+V 2×α 2
α：复合材料的热膨胀系数；V 1：树脂的体积分数；α 1：树脂的热膨胀系数；V 2：填料的体积分数；α 2：填料的热膨胀系数。
树脂的热膨胀系数α 1为60至120ppm，本发明的球形或角形粉体填料的热膨胀系数α 2在5至15ppm远低于树脂的热膨胀系数，其可以像现有的无机填料那样降低固化后树脂组成物的热膨胀系数达到和导线金属或晶片等的热膨胀匹配。由此，通过调节树脂和球形或角形粉体填料的体积分数，可以根据需要设计复合材料所需的热膨胀系数以形成封装材料、电路板及其中间半成品。
已知地，复合材料的诱电率可由下式2近似计算：
式2：logε＝V 1×logε 1+V 2×logε 2
ε：复合材料的诱电率；V 1：树脂的体积分数；ε 1：树脂的诱电率；V 2：填料的体积分数；ε 2：填料的诱电率。
由此，通过调节树脂和球形或角形粉体填料的体积分数，可以根据需要设计复合材料所需的诱电率以形成封装材料、电路板及其中间半成品。
另外，复合材料的诱电损失由树脂和填料的诱电损失，以及填料表面极性基团的多少来决定。根据本发明的球形或角形粉体填料具有低诱电率，填料表面具有的极性基团越少，因此，复合材料具有低诱电损失。
总之，根据本发明的球形或角形粉体填料的制备方法得到的填料具有低诱电率、低诱电损失。而且由于制备方法的原材料都是有机物，不涉及常规使用的角形粉碎石英等，而且可以通过蒸馏等工业方法精制，由此形成的球形或角形粉体填料中不含铀和钍等放射性元素，因此满足无导电异物、无粗大颗粒、低放射性的要求。另外，本发明的制备方法可适当调整合成参数来制造粒径为0.1至50微米的球形或角形粉体填料。
具体实施方式
下面给出本发明的较佳实施例，并予以详细描述。
以下实施例中涉及的检测方法包括：
平均粒径用HORIBA的激光粒度分布仪LA-700测定。溶剂是异丙醇；
比表面积用SHIMADZU的FlowSorbIII2305测定；
真比重用MicrotracBEL的BELPycno测定；
填料试样的热膨胀系数由已知热膨胀系数和真比重的环氧树脂，填料试样的真比重，通过测定含有一定量填料的树脂测试片的热膨胀系数后算出。
铀，釷含量用Agilent的7700X型ICP-MS测定。制样方法是800度烧灼后用氢氟酸全溶制样；
200度蒸发水分量用三菱化学的带加热气化器的CA-310卡尔费休全自动测定仪测定。
Q，T，D，M单位的含量是从固体 28Si-NMR核磁共振光谱图上-80至-120ppm范围的锋积分面积(Q单位)，-30至-80ppm范围的锋积分面积(T单位)，-10至-30ppm范围的锋积分面积(D单位)，+20至-10ppm范围的锋 积分面积(M单位)，算出。使用核磁共振仪是JEOL的ECS-400；参考文献：Separation and Purification Technology Volume 25,Issues 1–3,1October2001,Pages 391-397, 29Si NMR and Si2p XPS correlation in polysiloxane membranes prepared by plasma enhanced chemical vapor deposition。
诱电率和诱电损失用KEYCOM的摄动方式试料穴封锁形空洞共振法诱电率诱电损失测定装置Model No.DPS18测定。
在本文中，“度”指的是“摄氏度”，即℃。
参考《球形硅树脂微粉》，黄文润，有机硅材料，2007，21(5)294-299和PCT/CN2018/124685的方法制成不同组成的球形硅氧烷用于实施例和对比例以进行后续的热处理。
将甲基三氯硅烷或甲基三甲氧基硅烷加入水中得白色沉淀。用去离子水洗净后用砂磨机将沉淀物磨至2微米细粉用于实施例和对比例以进行后续的热处理。
另外，将甲基三氯硅烷或甲基三甲氧基硅烷和二氧化硅混合后加入水中得白色沉淀。用去离子水洗净后用砂磨机将沉淀物磨至2微米细粉用于实施例和对比例以进行后续的热处理。
例1
将T单位(R 1为甲基)100％，平均粒径2微米的球形硅氧烷在空气或氮气氛围下的不同温度下热处理。处理后的粉体用6％的甲基三甲氧基硅烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例和对比例样品。样品的分析结果列入表1。
表1
Figure PCTCN2019075831-appb-000002
显然，根据实施例1-实施例5得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。而在空气氛围下进行热处理的对比例1-5的样品的诱电率大于3，诱电损失大于0.005，不满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例2
将T单位(R 1为甲基)97％，Q单位3％的平均粒径2微米的球形硅氧烷在空气或氮气氛围下热处理。处理后的粉体不利用处理剂进行表面处理，直接用旋风分离除去10微米以上大颗粒得实施例和对比例样品。样品的分 析结果列入表2。
表2
Figure PCTCN2019075831-appb-000003
显然，根据实施例6得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。而在空气氛围下进行热处理的对比例6的样品的诱电率大于3，诱电损失大于0.005，不满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例3
将T单位(R 1为甲基)97％，D单位(R 2，R 3均为甲基)3％的平均粒径2微米的球形硅氧烷在空气或氮气氛围下热处理。处理后的粉体用4％的六甲基二硅氮烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例。样品的分析结果列入表3。
表3
Figure PCTCN2019075831-appb-000004
显然，根据实施例7得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。而在空气氛围下进行热处理的对比例7的样品的诱电率大于3，诱电损失大于0.005，不满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例4
将甲基三甲氧基硅烷和二氧化硅混合后加入水中得白色沉淀。用去离子水洗净后用砂磨机将沉淀物磨至2微米细粉。
将T单位(R 1为甲基)70％，二氧化硅微粉(气相白炭黑)30％的平均粒径2微米的角形硅氧烷在空气或氮气氛围下热处理。处理后的粉体用5％的二甲基二甲氧基硅烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例。样品的分析结果列入表4。
表4
Figure PCTCN2019075831-appb-000005
显然，根据实施例8得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。而在空气氛围下进行热处理的对比例8的样品的诱电率大于3，诱电损失大于0.005，不满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例5
将T单位(R 1为甲基)100％的平均粒径2微米的球形硅氧烷在氮气氛 围下热处理。处理后的粉体用8％的乙烯基三甲氧基硅烷处理后，4％的六甲基二硅氮烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例7，分析结果列入表5。将T单位(R 1为甲基)100％的平均粒径2微米的球形硅氧烷在氮气氛围下热处理。处理后的粉体用8％的甲基三甲氧基硅烷和4％的六甲基二硅氮烷的混合液处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例8，分析结果列入表5。
表5
Figure PCTCN2019075831-appb-000006
显然，根据实施例9-实施例10得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例6
将T单位(R 1为乙烯基)100％的平均粒径2微米的球形硅氧烷在氮气氛围下热处理。处理后的粉体用4％的六甲基二硅氮烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例11，分析结果列入表6。将T单位(R 1为甲基)100％的平均粒径2微米的球形硅氧烷在氮气氛围下热处理。处理后的粉体用4％的甲基三甲氧基硅烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例12，分析结果列入表6。
表6
Figure PCTCN2019075831-appb-000007
显然，根据实施例11-实施例12得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例7
将T单位(R 1为甲基)100％，平均粒径不同的球形硅氧烷在氮气氛围下热处理不同时间。处理后的粉体用4％的六甲基二硅氮烷混合处理，180度加热6小时得实施例样品。样品的分析结果列入表7。
表7
Figure PCTCN2019075831-appb-000008
Figure PCTCN2019075831-appb-000009
显然，根据实施例13-实施例17得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例8
将甲基三氯硅烷加入水中得白色沉淀。用去离子水洗净后用砂磨机将沉淀物磨至2微米细粉。过滤，干燥后氮气氛围下热处理。处理后的粉体用4％的六甲基二硅氮烷混合处理，然后180度加热6小时后，粉体用旋风分离除去10微米以上大颗粒得实施例样品。样品的分析结果列入表8。
表8
Figure PCTCN2019075831-appb-000010
显然，根据实施例18-实施例19得到的实施例样品的诱电率小于3，诱电损失不超过0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
应该理解，上述实施例1-实施例19所得到的实施例样品可以进行顶点切割步骤，以除去粗大颗粒。具体地，使用干法或湿法的筛分或惯性分级等方法来根据半导体芯片大小的需要，除去球形粉体填料中的75、55、45、20、10、5、3或1微米以上的粗大颗粒。另外，上述实施例1-实施例19所得到的实施例样品用氢氟酸溶解试样ICP-MS检测发现铀和钍的含量都在0.5ppb以下。
以上所述的，仅为本发明的较佳实施例，并非用以限定本发明的范围，本发明的上述实施例还可以做出各种变化。即凡是依据本发明申请的权利要求书及说明书内容所作的简单、等效变化与修饰，皆落入本发明专利的权利要求保护范围。本发明未详尽描述的均为常规技术内容。

Claims (11)

  1. 一种球形或角形粉体填料的制备方法，其特征在于，包括步骤：
    S1，提供包括T单位的球形或角形硅氧烷，其中，T单位＝R 1SiO 3-，R 1为氢原子或可独立选择的碳原子1至18的有机基；以及
    S2，在惰性气体氛围或真空条件下，对该球形或角形硅氧烷进行热处理，热处理温度为250度以上至750度以下，以使得球形或角形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷，最终获得球形或角形粉体填料。
  2. 根据权利要求1所述的制备方法，其特征在于，该球形或角形硅氧烷还含有Q单位、D单位、和/或M单位，其中，Q单位＝SiO 4-，D单位＝R 2R 3SiO 2-，M单位＝R 4R 5R 6SiO 2-，R 2，R 3，R 4，R 5，R 6分别为氢原子或可独立选择的碳原子1至18的烃基。
  3. 根据权利要求1所述的制备方法，其特征在于，该球形或角形硅氧烷还含有二氧化硅粒子。
  4. 根据权利要求1所述的制备方法，其特征在于，该制备方法还包括加入处理剂对缩合硅氧烷进行处理，以促进缩合硅氧烷中的硅羟基缩合以得到球形或角形粉体填料。
  5. 根据权利要求4所述的制备方法，其特征在于，该处理剂包括硅烷偶联剂，该硅烷偶联剂为(R 7) a(R 8) bSi(M) 4-a-b，R 7，R 8为可独立选择的碳原子1至18的烃基、氢原子、或被官能团置换的碳原子1至18的烃基，该官能团选自由以下有机官能团组成的组中的至少一种：乙烯基，烯丙基，苯乙烯基，环氧基，脂肪族氨基，芳香族氨基，甲基丙烯酰氧丙基，丙烯酰氧丙基，脲基丙基，氯丙基，巯基丙基，聚硫化物基，异氰酸酯丙基；M为碳原子1至18的烃氧基或卤素原子，a＝0、1、2或3，b＝0、1、2或3，a+b＝1、2或3。
  6. 根据权利要求4所述的制备方法，其特征在于，该处理剂包括二硅氮烷，该二硅氮烷为(R 9R 10R 11)SiNHSi(R 12R 13R 14)，R 9，R 10，R 11，R 12，R 13，R 14为可独立选择的碳原子1至18的烃基或氢原子。
  7. 根据权利要求4所述的制备方法，其特征在于，该处理剂的重量百分比添加量为0.5-50wt％。
  8. 根据权利要求1所述的制备方法，其特征在于，该制备方法包括使 用干法或湿法的筛分或惯性分级来除去球形或角形填料中的1、3、5、10、20、45、55、或75微米以上的粗大颗粒。
  9. 根据权利要求1-8中任一项所述的制备方法得到的球形或角形粉体填料，其特征在于，该球形或角形粉体填料的粒径为0.1-50微米，该球形或角形粉体填料的200度挥发水分含量小于或等于3000ppm。
  10. 根据权利要求9所述的球形或角形粉体填料的应用，其特征在于，不同粒径的球形或角形粉体填料紧密填充级配在树脂中形成复合材料。
  11. 根据权利要求10所述的球形或角形粉体填料的应用，其特征在于，该复合材料适用于半导体封装材料、电路板及其中间半成品。
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