TWI261343B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TWI261343B
TWI261343B TW094102436A TW94102436A TWI261343B TW I261343 B TWI261343 B TW I261343B TW 094102436 A TW094102436 A TW 094102436A TW 94102436 A TW94102436 A TW 94102436A TW I261343 B TWI261343 B TW I261343B
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TW
Taiwan
Prior art keywords
layer
semiconductor device
semiconductor
rewiring
via hole
Prior art date
Application number
TW094102436A
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English (en)
Chinese (zh)
Other versions
TW200529384A (en
Inventor
Koujiro Kameyama
Akira Suzuki
Yoshio Okayama
Original Assignee
Sanyo Electric Co
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Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200529384A publication Critical patent/TW200529384A/zh
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Publication of TWI261343B publication Critical patent/TWI261343B/zh

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094102436A 2004-02-17 2005-01-27 Semiconductor device and method of manufacturing the same TWI261343B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004040409A JP2005235860A (ja) 2004-02-17 2004-02-17 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200529384A TW200529384A (en) 2005-09-01
TWI261343B true TWI261343B (en) 2006-09-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094102436A TWI261343B (en) 2004-02-17 2005-01-27 Semiconductor device and method of manufacturing the same

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US (2) US7256497B2 (enExample)
EP (1) EP1564806B1 (enExample)
JP (1) JP2005235860A (enExample)
KR (1) KR100646722B1 (enExample)
CN (1) CN1658385A (enExample)
TW (1) TWI261343B (enExample)

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* Cited by examiner, † Cited by third party
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JP4850392B2 (ja) 2004-02-17 2012-01-11 三洋電機株式会社 半導体装置の製造方法
TWI250596B (en) * 2004-07-23 2006-03-01 Ind Tech Res Inst Wafer-level chip scale packaging method
JP4443379B2 (ja) 2004-10-26 2010-03-31 三洋電機株式会社 半導体装置の製造方法
JP4873517B2 (ja) * 2004-10-28 2012-02-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4641820B2 (ja) * 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
US7485967B2 (en) 2005-03-10 2009-02-03 Sanyo Electric Co., Ltd. Semiconductor device with via hole for electric connection
US9601474B2 (en) * 2005-07-22 2017-03-21 Invensas Corporation Electrically stackable semiconductor wafer and chip packages
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2007311771A (ja) * 2006-04-21 2007-11-29 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
JP5143382B2 (ja) * 2006-07-27 2013-02-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
WO2008072165A1 (en) * 2006-12-12 2008-06-19 Nxp B.V. Method of manufacturing openings in a substrate, a via in a substrate, and a semiconductor device comprising such a via
US20090089515A1 (en) * 2007-10-02 2009-04-02 Qualcomm Incorporated Memory Controller for Performing Memory Block Initialization and Copy
JP5136515B2 (ja) * 2009-05-27 2013-02-06 ソニー株式会社 固体撮像装置
JP5150566B2 (ja) * 2009-06-22 2013-02-20 株式会社東芝 半導体装置およびカメラモジュール
US8471367B2 (en) 2009-11-12 2013-06-25 Panasonic Corporation Semiconductor device and method for manufacturing semiconductor device
JP2012099548A (ja) * 2010-10-29 2012-05-24 Fujikura Ltd 貫通配線基板の製造方法及び貫通配線基板
JP6021441B2 (ja) * 2012-05-25 2016-11-09 ラピスセミコンダクタ株式会社 半導体装置
JP2014013810A (ja) 2012-07-04 2014-01-23 Seiko Epson Corp 基板、基板の製造方法、半導体装置、及び電子機器
JP5955706B2 (ja) * 2012-08-29 2016-07-20 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
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