TW581325U - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
TW581325U
TW581325U TW091221468U TW91221468U TW581325U TW 581325 U TW581325 U TW 581325U TW 091221468 U TW091221468 U TW 091221468U TW 91221468 U TW91221468 U TW 91221468U TW 581325 U TW581325 U TW 581325U
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
TW091221468U
Other languages
English (en)
Inventor
Hiroaki Oshio
Iwao Matsumoto
Tsuguo Uchino
Hiroshi Nagasawa
Tadashi Umegi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW581325U publication Critical patent/TW581325U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01063—Europium [Eu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
TW091221468U 1997-01-15 1998-01-19 Semiconductor light emitting device TW581325U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1737097 1997-01-15

Publications (1)

Publication Number Publication Date
TW581325U true TW581325U (en) 2004-03-21

Family

ID=11942149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091221468U TW581325U (en) 1997-01-15 1998-01-19 Semiconductor light emitting device

Country Status (5)

Country Link
US (2) US6274890B1 (zh)
EP (1) EP0854523B1 (zh)
KR (1) KR100355473B1 (zh)
DE (1) DE69838597T2 (zh)
TW (1) TW581325U (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683560A (zh) * 2006-09-01 2012-09-19 克里公司 发光二极管中的荧光体位置
CN104180249A (zh) * 2013-05-28 2014-12-03 潘宇翔 适用在直下式背光模块的光源装置及其显示器
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources

Families Citing this family (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4271747B2 (ja) * 1997-07-07 2009-06-03 株式会社朝日ラバー 発光ダイオード用透光性被覆材及び蛍光カラー光源
TW414924B (en) * 1998-05-29 2000-12-11 Rohm Co Ltd Semiconductor device of resin package
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
JP2000183407A (ja) 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6548832B1 (en) * 1999-06-09 2003-04-15 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
DE19928576C2 (de) * 1999-06-22 2003-05-22 Osram Opto Semiconductors Gmbh Oberflächenmontierbares LED-Bauelement mit verbesserter Wärmeabfuhr
KR100425566B1 (ko) * 1999-06-23 2004-04-01 가부시키가이샤 시티즌 덴시 발광 다이오드
WO2001009963A1 (fr) * 1999-07-29 2001-02-08 Citizen Electronics Co., Ltd. Diode electroluminescente
DE19940319B4 (de) * 1999-08-25 2004-10-14 Osram Opto Semiconductors Gmbh Verfahren zum spannungsarmen Aufsetzen einer Linse auf ein oberflächenmontierbares optoelektronisches Bauelement
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2001168400A (ja) * 1999-12-09 2001-06-22 Rohm Co Ltd ケース付チップ型発光装置およびその製造方法
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
US6867542B1 (en) * 2000-03-29 2005-03-15 General Electric Company Floating chip photonic device and method of manufacture
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP1153792A1 (de) * 2000-05-09 2001-11-14 SIDLER GMBH & CO Leuchtenanordnung mit mehreren LED's
JP2002093202A (ja) * 2000-09-13 2002-03-29 Ryoden Trading Co Ltd 面発光バックライト装置の製造方法及び面発光バックライト装置
US7095101B2 (en) * 2000-11-15 2006-08-22 Jiahn-Chang Wu Supporting frame for surface-mount diode package
US6365922B1 (en) * 2000-11-16 2002-04-02 Harvatek Corp. Focusing cup for surface mount optoelectronic diode package
AU2002217845A1 (en) 2000-11-16 2002-05-27 Emcore Corporation Microelectronic package having improved light extraction
KR20020045694A (ko) * 2000-12-09 2002-06-20 이택렬 광 반도체 소자 및 그 제조방법
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6940704B2 (en) * 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
JP2002299698A (ja) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd 発光装置
JP2002314139A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP2002314138A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP4050482B2 (ja) * 2001-04-23 2008-02-20 豊田合成株式会社 半導体発光装置
DE10122002A1 (de) * 2001-05-07 2002-11-21 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement und optoelektronisches Bauelement
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US6670648B2 (en) * 2001-07-19 2003-12-30 Rohm Co., Ltd. Semiconductor light-emitting device having a reflective case
KR20030024283A (ko) * 2001-09-17 2003-03-26 광전자 주식회사 방열 리드프레임과 이를 이용한 광 반도체 소자 및 그제조방법과, 반도체 소자
WO2003034508A1 (en) 2001-10-12 2003-04-24 Nichia Corporation Light emitting device and method for manufacture thereof
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR100439402B1 (ko) * 2001-12-24 2004-07-09 삼성전기주식회사 발광다이오드 패키지
DE10163117C5 (de) * 2001-12-24 2005-12-01 G.L.I. Global Light Industries Gmbh Verfahren zum Herstellen von lichtleitenden LED-Körpern in zwei zeitlich getrennten Stufen
US7343535B2 (en) * 2002-02-06 2008-03-11 Avago Technologies General Ip Dte Ltd Embedded testing capability for integrated serializer/deserializers
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
EP1385217A3 (en) * 2002-07-25 2005-04-20 Matsushita Electric Works, Ltd. Photoelectric device-part
US10340424B2 (en) * 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
EP1930959B1 (en) * 2002-08-30 2019-05-08 GE Lighting Solutions, LLC Phosphor-coated light emitting diode with improved efficiency
US10309587B2 (en) * 2002-08-30 2019-06-04 GE Lighting Solutions, LLC Light emitting diode component
AU2003270052B2 (en) 2002-08-30 2009-02-19 Gelcore Llc Phosphor-coated LED with improved efficiency
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
KR100462394B1 (ko) * 2002-09-02 2004-12-17 주식회사 티씨오 백색 발광다이오드 및 그 제조방법
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
DE10243247A1 (de) * 2002-09-17 2004-04-01 Osram Opto Semiconductors Gmbh Leadframe-basiertes Bauelement-Gehäuse, Leadframe-Band, oberflächenmontierbares elektronisches Bauelement und Verfahren zur Herstellung
ITMI20022085A1 (it) * 2002-10-02 2004-04-03 Fraen Corp Srl Elemento ottico associabile ad una sorgente luminosa
US20040137656A1 (en) * 2003-01-15 2004-07-15 Gurbir Singh Low thermal resistance light emitting diode package and a method of making the same
TWI237546B (en) * 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
EP1448031A1 (en) * 2003-02-13 2004-08-18 Yang, Pi-Fu Concave cup printed circuit board for light emitting diode and method for producing the same
CN101789482B (zh) * 2003-03-10 2013-04-17 丰田合成株式会社 固体元件装置及其制造方法
JP4514413B2 (ja) * 2003-04-14 2010-07-28 豊田合成株式会社 Ｌｅｄランプ及びその製造方法
EP1484802B1 (en) 2003-06-06 2018-06-13 Stanley Electric Co., Ltd. Optical semiconductor device
JP3878579B2 (ja) * 2003-06-11 2007-02-07 ローム株式会社 光半導体装置
US20050063648A1 (en) * 2003-09-19 2005-03-24 Wilson Robert Edward Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US6953990B2 (en) * 2003-09-19 2005-10-11 Agilent Technologies, Inc. Wafer-level packaging of optoelectronic devices
US7520679B2 (en) * 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
JP4288481B2 (ja) * 2003-10-02 2009-07-01 シチズン電子株式会社 発光ダイオード
JP4053962B2 (ja) * 2003-10-15 2008-02-27 株式会社東芝 半導体装置
US7276782B2 (en) * 2003-10-31 2007-10-02 Harvatek Corporation Package structure for semiconductor
EP1544923A3 (de) * 2003-12-19 2007-03-14 Osram Opto Semiconductors GmbH Strahlungemittierendes Halbleiterbauelement und Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
DE10361650A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
KR101228428B1 (ko) * 2004-02-20 2013-01-31 오스람 옵토 세미컨덕터스 게엠베하 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법
JP3892030B2 (ja) * 2004-02-26 2007-03-14 松下電器産業株式会社 Ｌｅｄ光源
WO2005091383A1 (ja) * 2004-03-24 2005-09-29 Renesas Yanai Semiconductor Inc. 発光装置の製造方法および発光装置
US20050213995A1 (en) * 2004-03-26 2005-09-29 Myunghee Lee Low power and low jitter optical receiver for fiber optic communication link
US7327078B2 (en) * 2004-03-30 2008-02-05 Lumination Llc LED illumination device with layered phosphor pattern
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US20050259418A1 (en) * 2004-05-18 2005-11-24 Callegari Mark R Expanded bit map display for mounting on a building surface and a method of creating same
US7230280B2 (en) * 2004-05-27 2007-06-12 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Collimating light from an LED device
US8975646B2 (en) * 2004-05-31 2015-03-10 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and housing base for such a component
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
DE102004031732A1 (de) * 2004-06-30 2006-01-19 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip mit einem Strahlformungselement und Strahlformungselement
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Ind Co Ltd Light-emitting device
JP2006086469A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
DE102004045950A1 (de) * 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP4922555B2 (ja) * 2004-09-24 2012-04-25 スタンレー電気株式会社 Ｌｅｄ装置
US7675079B1 (en) * 2004-10-28 2010-03-09 Kley Victor B Diamond coating of silicon-carbide LEDs
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
KR100580753B1 (ko) 2004-12-17 2006-05-15 엘지이노텍 주식회사 발광소자 패키지
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
KR100631901B1 (ko) * 2005-01-31 2006-10-11 삼성전기주식회사 Ｌｅｄ 패키지 프레임 및 이를 채용하는 ｌｅｄ 패키지
EP1873563B1 (en) * 2005-03-29 2017-03-22 Kyocera Corporation Light-emitting device using reflective member and illuminating device
DE102005036520A1 (de) * 2005-04-26 2006-11-09 Osram Opto Semiconductors Gmbh Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung
KR100616679B1 (ko) * 2005-05-11 2006-08-28 삼성전기주식회사 측면 발광다이오드 패키지
US7719021B2 (en) * 2005-06-28 2010-05-18 Lighting Science Group Corporation Light efficient LED assembly including a shaped reflective cavity and method for making same
WO2007002476A2 (en) * 2005-06-28 2007-01-04 Lamina Ceramics, Inc. Backlight module display with optical coupler and lightguide
US8344238B2 (en) * 2005-07-19 2013-01-01 Solyndra Llc Self-cleaning protective coatings for use with photovoltaic cells
DE102006032415A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
CN101297411B (zh) * 2005-10-24 2010-05-19 3M创新有限公司 发光器件的制造方法及发光器件
JP3992059B2 (ja) * 2005-11-21 2007-10-17 松下電工株式会社 発光装置の製造方法
JP4013077B2 (ja) * 2005-11-21 2007-11-28 松下電工株式会社 発光装置およびその製造方法
KR100820122B1 (ko) * 2005-12-14 2008-04-07 엘지전자 주식회사 발광 소자 패키지 및 그의 제조 방법
JP4965858B2 (ja) * 2005-12-26 2012-07-04 株式会社東芝 レンズ付発光ダイオード装置
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
KR101235460B1 (ko) * 2006-02-14 2013-02-20 엘지이노텍 주식회사 측면 발광형 엘이디 및 그 제조방법
KR100820529B1 (ko) 2006-05-11 2008-04-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법, 면 발광 장치
US20070269915A1 (en) * 2006-05-16 2007-11-22 Ak Wing Leong LED devices incorporating moisture-resistant seals and having ceramic substrates
JP2007311445A (ja) * 2006-05-17 2007-11-29 Stanley Electric Co Ltd 半導体発光装置及びその製造方法
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
KR101496066B1 (ko) * 2006-06-02 2015-03-02 히타치가세이가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
TWM302123U (en) * 2006-06-13 2006-12-01 Lighthouse Technology Co Ltd The stand structure of light-emitting diode
US7804147B2 (en) * 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
JP4846498B2 (ja) * 2006-09-22 2011-12-28 株式会社東芝 光半導体装置及び光半導体装置の製造方法
EP1914809A1 (en) * 2006-10-20 2008-04-23 Tridonic Optoelectronics GmbH Cover for optoelectronic components
KR100859496B1 (ko) * 2006-11-07 2008-09-22 한국에너지기술연구원 엘이디 램프 제조 방법
EP2089914A2 (en) * 2006-11-09 2009-08-19 Quantum Leap Packaging, Inc. Led reflective package
KR20080065451A (ko) * 2007-01-09 2008-07-14 삼성전기주식회사 Ｌｅｄ 패키지
EP2111651A4 (en) * 2007-02-13 2011-08-17 3M Innovative Properties Co LED DEVICES HAVING ASSOCIATED LENSES AND METHODS OF MANUFACTURE
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
US20080246397A1 (en) * 2007-04-04 2008-10-09 Bily Wang Manufacturing method of white light led and structure thereof
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
JP2008300573A (ja) * 2007-05-30 2008-12-11 Toshiba Corp 発光装置
US20090008662A1 (en) * 2007-07-05 2009-01-08 Ian Ashdown Lighting device package
JP5378666B2 (ja) * 2007-09-03 2013-12-25 日東電工株式会社 光半導体装置の製造方法
US20090065792A1 (en) * 2007-09-07 2009-03-12 3M Innovative Properties Company Method of making an led device having a dome lens
US8498464B2 (en) * 2007-09-27 2013-07-30 Siemens Medical Solutions Usa, Inc. Intrinsic co-registration for modular multimodality medical imaging systems
DE102008014122A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
JP4623322B2 (ja) * 2007-12-26 2011-02-02 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP4678415B2 (ja) * 2008-03-18 2011-04-27 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース
JP2010018786A (ja) * 2008-06-09 2010-01-28 Shin-Etsu Chemical Co Ltd 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース
JP2010021533A (ja) * 2008-06-09 2010-01-28 Shin-Etsu Chemical Co Ltd 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース
JP5217800B2 (ja) 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
US20100059783A1 (en) * 2008-09-08 2010-03-11 Harry Chandra Light Emitting Chip Package With Metal Leads For Enhanced Heat Dissipation
US8513691B2 (en) * 2008-10-17 2013-08-20 Koninklijke Philips Electronics N.V. Light emitting device including reflective optic housing at least partially filled with reflective material
TWI384591B (zh) * 2008-11-17 2013-02-01 Everlight Electronics Co Ltd 發光二極體電路板
JP2010245481A (ja) * 2009-04-10 2010-10-28 Sharp Corp 発光装置
US20100289055A1 (en) * 2009-05-14 2010-11-18 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Silicone leaded chip carrier
US9269875B2 (en) * 2009-05-20 2016-02-23 Intellectual Discovery Co., Ltd. Light emitter
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
CN102024882A (zh) * 2009-09-14 2011-04-20 展晶科技(深圳)有限公司 发光二极管装置及其制造方法
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8659106B2 (en) * 2009-10-29 2014-02-25 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
KR101064090B1 (ko) 2009-11-17 2011-09-08 엘지이노텍 주식회사 발광소자 패키지
KR101658838B1 (ko) * 2010-02-04 2016-10-04 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR100986397B1 (ko) * 2010-02-08 2010-10-08 엘지이노텍 주식회사 발광 장치
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8710525B2 (en) * 2010-03-15 2014-04-29 Nichia Corporation Light emitting device
KR101007125B1 (ko) 2010-04-13 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5778999B2 (ja) * 2010-08-06 2015-09-16 日亜化学工業株式会社 発光装置および画像表示ユニット
JP2012043883A (ja) * 2010-08-17 2012-03-01 Toshiba Corp 半導体装置およびその製造方法
BR112013001195B1 (pt) * 2010-12-28 2021-03-02 Nichia Corporation dispositivo emissor de luz e método para fabricar o mesmo
CN202056570U (zh) * 2011-01-20 2011-11-30 木林森股份有限公司 一种带透镜的表面贴装式发光二极管
FI122809B (fi) * 2011-02-15 2012-07-13 Marimils Oy Valolähde ja valolähdenauha
DE202011000856U1 (de) 2011-04-13 2011-08-10 Flextronics Automotive Gmbh & Co.Kg Anzeigevorrichtung für die Kühlschranktemperatur
JP5983603B2 (ja) 2011-05-16 2016-08-31 日亜化学工業株式会社 発光装置及びその製造方法
DE102011079796B4 (de) 2011-07-26 2015-08-13 Flextronics Automotive Gmbh & Co.Kg Verfahren zur Ermittlung von PWM-Werten für LED-Module
JP5865038B2 (ja) * 2011-11-30 2016-02-17 日東電工株式会社 素子接続用基板、その製造方法および発光ダイオード装置
US9117991B1 (en) 2012-02-10 2015-08-25 Flextronics Ap, Llc Use of flexible circuits incorporating a heat spreading layer and the rigidizing specific areas within such a construction by creating stiffening structures within said circuits by either folding, bending, forming or combinations thereof
TWI528596B (zh) * 2012-03-16 2016-04-01 鴻海精密工業股份有限公司 發光二極體封裝結構及其製造方法
US20130264577A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US9356214B2 (en) 2012-06-27 2016-05-31 Flextronics Ap, Llc. Cooling system for LED device
US9366394B2 (en) 2012-06-27 2016-06-14 Flextronics Ap, Llc Automotive LED headlight cooling system
WO2014002784A1 (ja) * 2012-06-28 2014-01-03 東レ株式会社 樹脂シート積層体およびそれを用いた半導体発光素子の製造方法
JP2014041993A (ja) * 2012-07-24 2014-03-06 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP6147976B2 (ja) * 2012-09-26 2017-06-14 ローム株式会社 発光装置、および、発光ユニットの製造方法
US9041019B2 (en) * 2012-10-25 2015-05-26 Flextronics Ap, Llc Method of and device for manufacturing LED assembly using liquid molding technologies
KR101413596B1 (ko) * 2012-12-07 2014-07-02 주식회사 루멘스 발광장치 및 이를 구비하는 백라이트 유닛
US9748460B2 (en) 2013-02-28 2017-08-29 Flextronics Ap, Llc LED back end assembly and method of manufacturing
JP6338136B2 (ja) 2013-04-30 2018-06-06 東芝ライテック株式会社 車両用照明装置、および車両用灯具
US20140367816A1 (en) * 2013-06-12 2014-12-18 Avago Technologies General Ip (Singapore) Pte.Ltd. Photodetector device having light-collecting optical microstructure
US9395067B2 (en) 2013-10-07 2016-07-19 Flextronics Ap, Llc Method of and apparatus for enhanced thermal isolation of low-profile LED lighting fixtures
EP3547379A1 (en) * 2014-03-14 2019-10-02 Citizen Electronics Co., Ltd. Light emitting apparatus
JP6194853B2 (ja) * 2014-06-06 2017-09-13 信越化学工業株式会社 光半導体装置用白色熱硬化性シリコーン樹脂組成物、及び光半導体素子搭載用ケース
JP6459354B2 (ja) * 2014-09-30 2019-01-30 日亜化学工業株式会社 透光部材及びその製造方法ならびに発光装置及びその製造方法
US10381332B2 (en) * 2014-10-31 2019-08-13 eLux Inc. Fabrication method for emissive display with light management system
US10123603B1 (en) 2015-03-27 2018-11-13 Multek Technologies Limited Diffuse fiber optic lighting for luggage
JP7046796B2 (ja) 2016-04-26 2022-04-04 シチズン電子株式会社 発光装置
CN110197864B (zh) * 2018-02-26 2022-06-14 世迈克琉明有限公司 半导体发光器件及其制造方法
US10810932B2 (en) * 2018-10-02 2020-10-20 Sct Ltd. Molded LED display module and method of making thererof
US11107957B2 (en) * 2019-03-08 2021-08-31 Foshan Nationstar Optoelectronics Co., Ltd. LED device and backlight module
CN115000281A (zh) * 2022-05-07 2022-09-02 旭宇光电（深圳）股份有限公司 Led用荧光粉胶以及led灯

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774086A (en) 1972-09-25 1973-11-20 Gen Electric Solid state lamp having visible-emitting phosphor at edge of infrated-emitting element
FR2248663B1 (zh) 1972-12-13 1978-08-11 Radiotechnique Compelec
JPS583393B2 (ja) * 1975-08-01 1983-01-21 株式会社東芝 コタイハツコウヒヨウジソウチ
US4179619A (en) * 1977-12-02 1979-12-18 General Electric Company Optocoupler having internal reflection and improved isolation capabilities
US4152624A (en) 1978-03-16 1979-05-01 Monsanto Company Molded LED indicator
DE3003331A1 (de) 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur kopplung einer infrarotdiode mit einer als lichtwellenleiter verwendeten einzelglasfaser
DE3117571A1 (de) * 1981-05-04 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lumineszenz-halbleiterbauelement
DE3128187A1 (de) 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement
JPS5843584A (ja) * 1981-09-09 1983-03-14 Canon Inc 発光ダイオ−ド
JPS624380A (ja) * 1985-06-29 1987-01-10 Toshiba Corp 発光ダイオ−ド装置
JPH081963B2 (ja) * 1987-12-09 1996-01-10 ローム株式会社 発光ダイオード装置
US5043716A (en) 1988-07-14 1991-08-27 Adaptive Micro Systems, Inc. Electronic display with lens matrix
EP0400176B1 (de) 1989-05-31 2000-07-26 Osram Opto Semiconductors GmbH & Co. OHG Verfahren zum Montieren eines oberflächenmontierbaren Opto-Bauelements
JPH0343750U (zh) * 1989-09-04 1991-04-24
DE4242842C2 (de) 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
US5266817A (en) 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
EP0632511A3 (en) 1993-06-29 1996-11-27 Mitsubishi Cable Ind Ltd Light emitting diode module and method for its manufacture.
US5404282A (en) 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
DE4340864C2 (de) 1993-12-01 1996-08-01 Telefunken Microelectron Vorrichtung und Verfahren zum Herstellen von optoelektronischen Bauelementen
JPH07273372A (ja) * 1994-03-28 1995-10-20 Matsushita Electron Corp 発光ダイオードおよびその製造方法
JP2596709B2 (ja) * 1994-04-06 1997-04-02 都築 省吾 半導体レーザ素子を用いた照明用光源装置
JP2994219B2 (ja) 1994-05-24 1999-12-27 シャープ株式会社 半導体デバイスの製造方法
US5798536A (en) * 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
CN102683560A (zh) * 2006-09-01 2012-09-19 克里公司 发光二极管中的荧光体位置
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
CN104180249A (zh) * 2013-05-28 2014-12-03 潘宇翔 适用在直下式背光模块的光源装置及其显示器

Also Published As

Publication number Publication date
DE69838597D1 (de) 2007-12-06
EP0854523A3 (en) 2000-05-10
KR19980070526A (ko) 1998-10-26
EP0854523A2 (en) 1998-07-22
US6274890B1 (en) 2001-08-14
KR100355473B1 (ko) 2002-11-18
EP0854523B1 (en) 2007-10-24
US20010042865A1 (en) 2001-11-22
DE69838597T2 (de) 2008-07-24

Similar Documents

Publication Publication Date Title
TW581325U (en) Semiconductor light emitting device
EP0902978A4 (en) LIGHT-EMITTING SEMICONDUCTOR ARRANGEMENT
GB9811180D0 (en) Semiconductor light-emitting device
GB9921483D0 (en) Light emitting devices
TW497759U (en) Semiconductor light emitting device
GB2293919B (en) Semiconductor light emitting diode
EP0926744B8 (en) Light emitting device
HK1045909B (zh) 發光元件
HK1054467B (zh) 發光元件
DE69533276D1 (de) Lichtemittierende Halbleitervorrichtungen
GB9714468D0 (en) Optoelectronic semiconductor devices
GB2323208B (en) Reflective contact for light emitting semiconductor device
EP0703630A3 (en) Semiconductor light emitting device
DE69506043D1 (de) Lichtemittierende Halbleitervorrichtung
EP0727828A3 (en) Semiconductor light emitting device
GB9810798D0 (en) Light emitting devices
GB9805086D0 (en) Light emitting device
EP0767502A3 (en) Semiconductor light emitting device
GB2331183A9 (en) Organic light emitting devices
GB9502957D0 (en) Semiconductor light emitting element
EP0720242A3 (en) AlGaInP semiconductor light emitting device
SG75137A1 (en) Semiconductor laser device
EP0680122A3 (en) Type II / VI light emitting semiconductor device.
GB2350441B (en) Light emitting and receiving device
EP0632554A3 (en) Semiconductor light emitting device.

Legal Events

Date Code Title Description
MK4K Expiration of patent term of a granted utility model