TW567615B - Power semiconductor device and its manufacturing method - Google Patents

Power semiconductor device and its manufacturing method Download PDF

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Publication number
TW567615B
TW567615B TW091106614A TW91106614A TW567615B TW 567615 B TW567615 B TW 567615B TW 091106614 A TW091106614 A TW 091106614A TW 91106614 A TW91106614 A TW 91106614A TW 567615 B TW567615 B TW 567615B
Authority
TW
Taiwan
Prior art keywords
base layer
layer
type
semiconductor device
patent application
Prior art date
Application number
TW091106614A
Other languages
English (en)
Chinese (zh)
Inventor
Hidetaka Hattori
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW567615B publication Critical patent/TW567615B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
TW091106614A 2001-04-05 2002-04-02 Power semiconductor device and its manufacturing method TW567615B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001107252A JP2002305304A (ja) 2001-04-05 2001-04-05 電力用半導体装置

Publications (1)

Publication Number Publication Date
TW567615B true TW567615B (en) 2003-12-21

Family

ID=18959602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106614A TW567615B (en) 2001-04-05 2002-04-02 Power semiconductor device and its manufacturing method

Country Status (6)

Country Link
US (2) US6605858B2 (enExample)
EP (1) EP1248299A3 (enExample)
JP (1) JP2002305304A (enExample)
KR (1) KR100449182B1 (enExample)
CN (1) CN1228858C (enExample)
TW (1) TW567615B (enExample)

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CN103151251B (zh) * 2011-12-07 2016-06-01 无锡华润华晶微电子有限公司 沟槽型绝缘栅双极型晶体管及其制备方法
JP5644793B2 (ja) * 2012-03-02 2014-12-24 株式会社デンソー 半導体装置
CN103367436B (zh) * 2012-04-03 2017-08-08 朱江 一种沟槽肖特基mos半导体装置及其制造方法
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JP5880311B2 (ja) * 2012-06-26 2016-03-09 住友電気工業株式会社 炭化珪素半導体装置
CN103151371A (zh) * 2013-03-05 2013-06-12 矽力杰半导体技术(杭州)有限公司 一种晶圆结构以及应用其的功率器件
JP2015023118A (ja) * 2013-07-18 2015-02-02 株式会社東芝 半導体装置
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
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JP6287407B2 (ja) * 2014-03-19 2018-03-07 サンケン電気株式会社 半導体装置
JP6126150B2 (ja) * 2015-03-06 2017-05-10 トヨタ自動車株式会社 半導体装置
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JP6880669B2 (ja) * 2016-11-16 2021-06-02 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN107464842A (zh) * 2017-08-03 2017-12-12 电子科技大学 一种具有集电极槽的超结逆导型igbt
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
JP7607538B2 (ja) * 2021-09-14 2024-12-27 三菱電機株式会社 半導体装置

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Also Published As

Publication number Publication date
CN1379479A (zh) 2002-11-13
CN1228858C (zh) 2005-11-23
US20020195656A1 (en) 2002-12-26
US20030209781A1 (en) 2003-11-13
EP1248299A2 (en) 2002-10-09
KR100449182B1 (ko) 2004-09-18
US7056779B2 (en) 2006-06-06
JP2002305304A (ja) 2002-10-18
EP1248299A3 (en) 2008-05-28
KR20020077659A (ko) 2002-10-12
US6605858B2 (en) 2003-08-12

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