CN107464842A - 一种具有集电极槽的超结逆导型igbt - Google Patents
一种具有集电极槽的超结逆导型igbt Download PDFInfo
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Abstract
本发明属于功率半导体技术领域，具体涉及一种具有集电极槽的超结逆导型IGBT。本发明相对与传统超结RC‑IGBT结构，主要在底部集电区引入集电极槽结构。新器件正向导通且未进入双极模式时，P型条会耗尽集电极槽底部的N漂移区，从而挤占电子电流路径且降低有效电子浓度，从而增大集电极区附近电子电流的分布电阻，使得新器件能在较小元胞尺寸下消除器件snapback效应。新器件关断时，集电极槽结构起到等效缓冲层作用，保证器件能承受高耐压。本发明的有益效果为，相对于传统超结RC‑IGBT结构，本发明能在更小元胞尺寸下消除snapback效应，同时具有更快的关断速度，反向二极管模式下电流分布更均匀。
Description
技术领域
本发明属于功率半导体技术领域，涉及一种具有集电极槽的超结逆导型IGBT(Reverse Conducting-Insulated Gate Bipolar Transistor，逆导型绝缘栅双极型晶体管)。
背景技术
绝缘栅双极型晶体管(IGBT)兼具了MOSFET输入阻抗高和驱动简单的优点，以及BJT器件电流密度高和低导通压降的优势，已成为现代电力电子电路应用中的核心电子元器件之一。因其在高压大电流领域内独特的优势，IGBT器件广泛应用于交通运输、智能电网、家用电器、工业、医学、航空航天等众多领域。因为IGBT反向工作时等效为一个开基区PNP三极管，并没有像VDMOS那样的体二极管，因此没有续流能力。在应用电路中，IGBT旁都会有一个反向并联的二极管作为续流保护，以确保系统的安全稳定。但是这样会增加IGBT模块中器件个数、模块的体积及生产成本，而且封装过程中焊点数增加也会影响器件的可靠性，金属连线等产生的寄生效应也会器件的整体性能。
文献(Hideki Takahashi,Aya Yamamoto,Shinji Aono,Tadaharu Minato，1200VReverse Conducting IGBT，Proceedings of The 16th International Symposium onPower Semiconductor Devices&ICs,2004，pp.24-27)提出了逆导型IGBT((ReverseConducting IGBT)，成功将普通的IGBT和续流二极管集成在一起，使器件具有反向导通能力，这样可节省系统所用的器件的个数，使系统的功耗降低，同时也可以消除由于IGBT和二极管独立封装带来寄生效应。
电压折回效应(snapback)是RC-IGBT面临的主要问题之一。在较小集电极电压时，P集电区与漂移区所形成的二极管不导通，器件处于单极模式；随着集电极电压逐步升高，P集电区与漂移区所形成的二极管导通，P集电区往漂移区内注入空穴，发生电导调制效应，器件处于双极模式。当RC-IGBT由单极模式转换到双极模式时，输出电流电压曲线就会发生电压折回效应，如说明书附图1所示。电压折回效应容易使RC-IGBT模块局部电流集中，造成器件烧毁。传统的RC-IGBT都是通过增加P集电区的长度，使P集电区上的分布式电阻增大，从而有效抑制电压折回效应。但这样会使P集电极的长度远大于N集电极的长度，导致RC-IGBT反向导通时电流分布不均，二极管特性不佳。
发明内容
本发明的目的，就是针对上述问题，提出一种具有集电极槽的超结逆导型IGBT。
本发明的技术方案是：一种具有集电极槽的超结逆导型IGBT，自上而下包括MOS元胞结构、N型漂移区6和集电极结构；所述MOS元胞结构包括槽栅和P型阱区3；所述槽栅包括第一绝缘层41和位于第一绝缘层41中的第一导电材料51，第一导电材料51的引出端为栅电极G；所述槽栅穿过所述P型阱区3深入到所述N型漂移区6中；所述P型阱区3位于槽栅两侧，所述P型阱区3上表面具有N+发射极区1和P+体接触区2，且N+发射极区1与绝缘层41接触，P+体接触区2位于N+发射极区1两侧，N+发射极区1和P+体接触区2的共同引出端为发射极E；所述集电极结构包括多个集电极槽、P+集电区7和N+集电区8；所述集电极槽包括第二绝缘层42和位于第二绝缘层42中的第二导电材料52，第二导电材料52的引出端为第二集电极CT，所述集电极槽深入到N型漂移区6；所述P+集电区7和所述N+集电区8由所述集电极槽隔开，所述P+集电区7被述集电极槽分隔为多段，所述P+集电区7的总长度大于所述N+集电区8的长度，并且所述P+集电区7和所述N+集电区8的共同引出端为集电极C；所述N型漂移区6中具有间隔排布的P型条61，所述P型条61与N型漂移区6组成超结结构。
本发明通过在集电极端一侧引入集电极槽，不仅有效消除了电压折回的效应，而且拥有更快的开关速度和二极管特性。
进一步的，所述P型条61与所述集电极槽的第二绝缘层42之间有间距；
进一步的，所述P型条61与所述集电极槽的第二绝缘层42相连接；
进一步的，所述的集电极C和所述的第二集电极CT之间短接；
进一步的，所述的集电极C和所述的第二集电极CT之间具有一个偏置电压；
进一步的，所述的P+集电区7和N+集电区8的上表面具有N型缓冲层9；
进一步的，所述P型阱区3与所述N型漂移区6之间有N型载流子存储层10；
进一步的，所述半导体材料包括但不限于Si、SiC、SiGe、GaAs或GaN。
本发明的有益效果为，相对于传统的结构，本发明能在更小的元胞尺寸下消除snapback效应，新器件具有更快的关断速度和更好的二极管特性。
附图说明
图1为传统RC-IGBT电压折回效应示意图；
图2为实施例1的结构示意图；
图3为实施例2的结构示意图；
图4为实施例3的结构示意图；
图5为实施例4的结构示意图；
图6为实施例5的结构示意图；
图7为实施例6的结构示意图；
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1
如图2所示，本例的具有集电极槽的超结逆导型IGBT，自上而下包括MOS元胞结构、N型漂移区6和集电极结构；所述MOS元胞结构包括槽栅和P型阱区3；所述槽栅包括第一绝缘层41和位于第一绝缘层41中的第一导电材料51，第一导电材料51的引出端为栅电极G；所述槽栅穿过所述P型阱区3深入到所述N型漂移区6中；所述P型阱区3位于槽栅两侧，所述P型阱区3上表面具有N+发射极区1和P+体接触区2，且N+发射极区1与绝缘层41接触，P+体接触区2位于N+发射极区1两侧，N+发射极区1和P+体接触区2的共同引出端为发射极E；所述集电极结构包括多个集电极槽、P+集电区7和N+集电区8；所述集电极槽包括第二绝缘层42和位于第二绝缘层42中的第二导电材料52，第二导电材料52的引出端为第二集电极CT，所述集电极槽深入到N型漂移区6；所述P+集电区7和所述N+集电区8由所述集电极槽隔开，所述P+集电区7被述集电极槽分隔为多段，所述P+集电区7的长度大于所述N+集电区8的长度，并且所述P+集电区7和所述N+集电区8的共同引出端为集电极C；所述N型漂移区6中具有间隔排布的P型条61，所述P型条61与N型漂移区6组成超结结构。
本例的工作原理为：
新器件正向导通且未进入双极模式时，P型条会耗尽集电极槽底部的N漂移区，从而挤占电子电流路径且降低有效电子浓度，从而增大集电极区附近电子电流的分布电阻，使得新器件能在较小元胞尺寸下消除器件snapback效应。新器件关断时，集电极槽结构起到等效缓冲层作用，保证器件能承受高耐压。本发明的有益效果为，相对于传统超结RC-IGBT结构，本发明能在更小元胞尺寸下消除snapback效应，同时具有更快的关断速度，反向二极管模式下电流分布更均匀。
实施例2
如图3所示，本例与实施例1的区别在于，本例中N型漂移区6中P型条61与集电极槽的第二绝缘层42相连接。与实施例1相比，本例中P型条62阻断了其他位置的表面MOS电子电流流向N+集电区8，新器件直接等效为一个IGBT与MOS管的并联，这样抑制电压折回效应的效果更好。
实施例3
如图4所示，本例与实施例1的区别在于，本例中第二集电极CT与集电极C之间存在电压差VG2。器件正向导通时，第二集电极CT上的电压低于集电极C上的电压(即VG2<0)，第二绝缘层42侧壁形成高浓度的空穴反型层，将增强空穴注入面积与效率，有利降低器件正向导通压降；同时，该空穴反型层与P型条共同耗尽集电极槽与P型条之间的N漂移区，增大了集电极附近的分布电阻，有利消除snapback效应。器件正向阻断时，第二集电极CT上的电压高于集电极C上的电压(即VG2>0)，第二绝缘层42侧壁形成高浓度的电子积累层，该电子积累层与集电极槽作为等效场截止层，保证器件能承受高耐压；同时，该电子积累层也会降低P+集电区7与N型漂移区6之间电势差，从而降低空穴注入效率，而且也是一个电子快速抽取的通道，有利提高器件关断速度。与实施例1相比，本例中器件能获得更低的正向导通压降与更快的关断速度。
实施例4
如图5所示，本例与实施例1的区别在于，本例中P+集电区7和N+集电区8与N型漂移区6之间引入了N型缓冲层9，且该N型缓冲层9的深度低于集电极槽的底部。与实施例1相比，由于N型缓冲层9起到场截止作用，本例中新器件的耐压特性将更稳健，泄露电流更小。
实施例5
如图6所示，本例与实施例1的区别在于，本例中P型阱区3与N型漂移区6之间引入了N型存储层10，且该N型存储层10的深度低于槽栅的底部。与实施例1相比，本例中N型存储层10能抑制发射极端空穴的抽取速率，从而增强电子注入效率与漂移区中等离子的浓度；因此，该实施案例中新器件能获得更低的正向导通压降。
实施例6
如图7所示，本例与实施例4的区别在于，本例中P+集电区7和N+集电区8与N型漂移区6之间引入了N型缓冲层9，且该N型缓冲层9的深度低于集电极槽的底部；同时，集电极槽结构数目较少且主要分布在N+集电区8附近。与实施例1、4相比，本例中N型缓冲层9使得器件能承受高耐压，而该实施例中新器件减少了集电极槽占数目，等效P+集电区7面积增加，有利提高空穴注入效率而降低器件正向导通压降。
Claims (8)
1.一种具有集电极槽的超结逆导型IGBT，包括自上而下的MOS元胞结构、N型漂移区(6)和集电极结构；所述MOS元胞结构包括槽栅和P型阱区(3)，P型阱区(3)位于N型漂移区(6)上表面；所述槽栅包括第一绝缘层(41)和位于第一绝缘层(41)中的第一导电材料(51)，第一导电材料(51)的引出端为栅电极(G)；所述槽栅贯穿所述P型阱区(3)延伸入所述N型漂移区(6)中；所述P型阱区(3)上表面具有N+发射极区(1)和P+体接触区(2)，且N+发射极区(1)与绝缘层(41)接触，P+体接触区(2)位于N+发射极区(1)两侧，N+发射极区(1)和P+体接触区(2)的共同引出端为发射极(E)；所述集电极结构包括多个集电极槽、P+集电区(7)和N+集电区(8)；所述集电极槽包括第二绝缘层(42)和位于第二绝缘层(42)中的第二导电材料(52)，第二导电材料(52)的引出端为第二集电极(CT)，所述集电极槽深入到N型漂移区(6)；所述P+集电区(7)和所述N+集电区(8)由所述集电极槽隔开，所述P+集电区(7)被述集电极槽分隔为多段，所述P+集电区(7)的总长度大于所述N+集电区(8)的长度，并且所述P+集电区(7)和所述N+集电区(8)的共同引出端为集电极(C)；所述N型漂移区(6)中具有间隔排布的P型条(61)，所述P型条(61)与N型漂移区(6)组成超结结构。
2.根据权利要求1所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述P型条(61)与所述集电极槽的第二绝缘层(42)之间有间距。
3.根据权利要求1所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述P型条(61)与所述集电极槽的第二绝缘层(42)相连接。
4.根据权利要求1～3中任意一项所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述的集电极(C)和所述的第二集电极(CT)之间短接。
5.根据权利要求4所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述的集电极(C)和所述的第二集电极(CT)之间具有一个偏置电压。
6.根据权利要求5所述的一种具有集电极槽的超结逆导型IGBT，所述的P+集电区(7)和N+集电区(8)的上表面具有N型缓冲层(9)。
7.根据权利要求6所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述P型阱区(3)与所述N型漂移区(6)之间有N型载流子存储层(10)。
8.根据权利要求7所述的一种具有集电极槽的超结逆导型IGBT，其特征在于，所述半导体材料至少包括Si、SiC、SiGe、GaAs或GaN。
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