CN114256331A - 一种具有异质结的超结逆导型igbt - Google Patents

一种具有异质结的超结逆导型igbt Download PDF

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CN114256331A
CN114256331A CN202111584337.8A CN202111584337A CN114256331A CN 114256331 A CN114256331 A CN 114256331A CN 202111584337 A CN202111584337 A CN 202111584337A CN 114256331 A CN114256331 A CN 114256331A
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陈万军
吴毅
夏云
孙瑞泽
刘超
张波
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University of Electronic Science and Technology of China
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Abstract

本发明属于功率半导体技术领域，特别涉及一种具有异质结的超结逆导型IGBT。本发明的异质结的超结逆导型IGBT，其元胞结构包括集电极结构、耐压层结构、栅极结构和发射极结构，相对于传统结构，首先本发明的集电极结构进行了改进，将绝缘介质设置在集电极金属中部，将集电极区完全设置在N漂移区下方，同时将另一侧的P漂移区及漂移区之上的P阱、P接触区都采用碳化硅制作，从而本发明的异质结超结逆导型IGBT消除了传统超结逆导型IGBT正向导通时的snapback现象，并且反向恢复电荷可以有效降低。

Description

一种具有异质结的超结逆导型IGBT
技术领域
本发明属于功率半导体技术领域，特别涉及一种具有异质结的超结逆导型IGBT(绝缘栅双极型晶体管，Insulated Gate Bipolar Transistor，简称IGBT)。
背景技术
在IGBT结构中引入超结结构可以改善其关断损耗，并且击穿电压与比导通电阻的折中关系也优于传统的IGBT。超结逆导型IGBT解决了传统超结IGBT无法反向导通的问题，使得在系统中不需要外部集成续流二极管也可以续流。超结逆导型IGBT在正向导通时存在单极型导电向双极型导电的转换，因此存在电压回跳现象，表现为IV曲线的snapback现象。snapback现象会带来逆导型IGBT器件的一些可靠性问题，尤其是在逆导型IGBT器件的并联应用中，该现象可能导致一些器件不能正常开启，而一些器件电流过大，器件内部的局部温度过高被烧毁，进而导致整个系统的失效。
发明内容
本发明的目的，就是针对上述问题，提出一种具有异质结的超结逆导型IGBT，消除snapback现象。
本发明的技术方案：一种具有异质结的超结逆导型IGBT，其元胞结构包括集电极结构、耐压层结构、栅极结构和发射极结构，其中耐压层位于集电极结构之上，栅极结构位于耐压层之上，发射极结构位于耐压层之上；
所述集电极结构包括集电极金属1、第一绝缘介质层2以及第一P+集电极区3；所述集电极金属1引出端为集电极；所述第一绝缘介质层2位于集电极金属1中部上层，第一绝缘介质层2的上表面与耐压层及部分第一P+集电极区3接触；所述第一P+集电极区3位于集电极金属1上表面一端，第一P+集电极区3的上表面与耐压层接触；
所述耐压层结构包括第一N+场截止层4、N漂移区5、P漂移区6；所述第一N+场截止层4覆盖第一P+集电极区3的上表面，同时沿第一P+集电极区3的侧面向下延伸至与第一绝缘介质层2的上表面接触，第一N+场截止层4的上表面与N漂移区5的下表面接触；所述N漂移区5和第一N+场截止层4的侧面与P漂移区6的侧面接触，N漂移区5的上表面与发射极结构和栅极结构接触；P漂移区6的下表面与集电极金属1上表面接触并形成肖特基接触，P漂移区6的上表面与发射极结构接触；
所述栅极结构为沟槽栅，所述沟槽栅由第二绝缘介质层13及位于第二绝缘介质层13中的第一导电材料7构成；所述沟槽栅位于N漂移区5上表面一端并沿器件垂直方向延伸入N漂移区5中，第二绝缘介质13与发射极结构接触；所述第一导电材料7的引出端为栅极；
所述发射极结构包括第一P阱8、第二P阱9、N+发射极区10、第一P+体接触区11、第二P+体接触区12、发射极金属14；所述第一P阱8下表面与N漂移区5上表面接触，第一P阱8一侧的侧面与第二绝缘介质层13接触，第一P阱8另一侧的侧面与第二P阱9接触；所述第二P阱9的下表面与P漂移区6的上表面接触；所述N+发射极区10和第一P+体接触区11并列位于第一P阱8的上层，且N+发射极区10与第二绝缘介质层13接触；所述第二P+体接触区12位于第二P阱9上表面并与第一P+体接触区11接触；所述发射极金属14下表面与N+发射极区10、第一P+体接触区11、第二P+体接触区12接触，发射极金属14引出端为发射极；
所述第一P+集电极区3、第一N+场截止层4、N漂移区5、第一P阱8、N+发射极区10以及第一P+体接触区11采用的材料为硅，而P漂移区6、第二P阱9以及第二P+体接触区12采用的材料为碳化硅。
本发明的有益效果为，本发明的异质结超结逆导型IGBT消除了传统超结逆导型IGBT正向导通时的snapback现象，并且反向恢复电荷可以有效降低。
附图说明
图1是本发明的无snapback的具有异质结的超结逆导型IGBT示意图。
图2是传统超结RC-IGBT示意图。
具体实施方式
下面结合附图对本发明进行详细描述
如图1所示为本发明的无snapback现象的超结逆导型IGBT，图2为传统超结逆导型IGBT示意图。在本发明中集电极金属1与SiC-P漂移区6组成P型肖特基二极管。
正向耐压时，本发明结构的SiC-P漂移区和N漂移区形成超结结构承受耐压，同时P型肖特基二极管，界面上有高电场存在，但是由于本发明的P型肖特基二极管为SiC材料，禁带宽度高，其在耐压时产生的漏电流很低，因此对器件耐压的影响很小。
器件反向导通时，栅极关断，集电极为低电位，发射极为高电位。本发明结构中反向电流经发射极金属14、SiC-P+体接触区12、SiC-P阱9、SiC-P漂移区6最后到集电极金属1，形成反向导通通路。由于本发明器件反向导通电流由P型肖特基二极管导通，而P型肖特基二极管为多子器件，因此本发明器件的反向恢复电荷很低。
正向导通时，栅极开启，集电极为高电位，发射极为低电位。本发明器件的电子从N+发射极区10经反型层沟道、N漂移区5在N+场截止层4积累，积累的电子数量足够多时，P+集电极区3与N+场截止层4形成的PN结开启，器件进入双极型导电模式。由于不存在单极型向双极型导电的过渡，因此正向导通时不会存在snapback现象。而传统超结逆导型IGBT在反向导通时，电流经发射极金属12、N+发射极9、P+体接触区10、P阱区8、N漂移区5、N+场截止层4、N+集电极3、集电极金属1进行导通。正向导通时，当正向电压较小，电流经集电极金属1、N+集电极区3、N+场截止层4、N漂移区5、反型层沟道、N+发射极9、发射极金属12，这个阶段为单极型导电；随着正向电压的增大，流经集电极P+区上方的横向电流产生的横向压降使得P+集电极区2与场截止层4形成的PN结开启，大量空穴由P+集电极区2注入漂移区，发生电导调制，这个阶段为双极型导电。由于电导调制，器件的导通电阻急剧下降，正向导通曲线出现snapback。
因此，本发明结构可以有效消除正向导通时的snapback现象，并且反向恢复电荷可以有效降低、器件耐压也未受到影响。

Claims (1)

1.一种具有异质结的超结逆导型IGBT，其元胞结构包括集电极结构、耐压层结构、栅极结构和发射极结构，其中耐压层位于集电极结构之上，栅极结构位于耐压层之上，发射极结构位于耐压层之上；其特征在于，
所述集电极结构包括集电极金属(1)、第一绝缘介质层(2)以及第一P+集电极区(3)；所述集电极金属(1)引出端为集电极；所述第一绝缘介质层(2)位于集电极金属(1)中部上层，第一绝缘介质层(2)的上表面与耐压层及部分第一P+集电极区(3)接触；所述第一P+集电极区(3)位于集电极金属(1)上表面一端，第一P+集电极区(3)的上表面与耐压层接触；
所述耐压层结构包括第一N+场截止层(4)、N漂移区(5)、P漂移区(6)；所述第一N+场截止层(4)覆盖第一P+集电极区(3)的上表面，同时沿第一P+集电极区(3)的侧面向下延伸至与第一绝缘介质层(2)的上表面接触，第一N+场截止层(4)的上表面与N漂移区(5)的下表面接触；所述N漂移区(5)和第一N+场截止层(4)的侧面与P漂移区(6)的侧面接触，N漂移区(5)的上表面与发射极结构和栅极结构接触；P漂移区(6)的下表面与集电极金属(1)上表面接触并形成肖特基接触，P漂移区(6)的上表面与发射极结构接触；
所述栅极结构为沟槽栅，所述沟槽栅由第二绝缘介质层(13)及位于第二绝缘介质层(13)中的第一导电材料(7)构成；所述沟槽栅位于N漂移区(5)上表面一端并沿器件垂直方向延伸入N漂移区(5)中，第二绝缘介质(13)与发射极结构接触；所述第一导电材料(7)的引出端为栅极；
所述发射极结构包括第一P阱(8)、第二P阱(9)、N+发射极区(10)、第一P+体接触区(11)、第二P+体接触区(12)、发射极金属(14)；所述第一P阱(8)下表面与N漂移区(5)上表面接触，第一P阱(8)一侧的侧面与第二绝缘介质层(13)接触，第一P阱(8)另一侧的侧面与第二P阱(9)接触；所述第二P阱(9)的下表面与P漂移区(6)的上表面接触；所述N+发射极区(10)和第一P+体接触区(11)并列位于第一P阱(8)的上层，且N+发射极区(10)与第二绝缘介质层(13)接触；所述第二P+体接触区(12)位于第二P阱(9)上表面并与第一P+体接触区(11)接触；所述发射极金属(14)下表面与N+发射极区(10)、第一P+体接触区(11)、第二P+体接触区(12)接触，发射极金属(14)引出端为发射极；
所述第一P+集电极区(3)、第一N+场截止层(4)、N漂移区(5)、第一P阱(8)、N+发射极区(10)以及第一P+体接触区(11)采用的材料为硅，而P漂移区(6)、第二P阱(9)以及第二P+体接触区(12)采用的材料为碳化硅。
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CN114883395A (zh) * 2022-05-05 2022-08-09 电子科技大学 一种具有部分p型漂移区的igbt
CN114883395B (zh) * 2022-05-05 2023-04-25 电子科技大学 一种具有部分p型漂移区的igbt
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CN116153966B (zh) * 2023-02-09 2023-12-12 上海功成半导体科技有限公司 超结mos器件结构及其制备方法
CN117650165A (zh) * 2023-10-31 2024-03-05 海信家电集团股份有限公司 半导体装置
CN117650165B (zh) * 2023-10-31 2024-05-31 海信家电集团股份有限公司 半导体装置

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