CN105023943A - 一种纵向rc-igbt器件 - Google Patents
一种纵向rc-igbt器件 Download PDFInfo
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- CN105023943A CN105023943A CN201510483439.9A CN201510483439A CN105023943A CN 105023943 A CN105023943 A CN 105023943A CN 201510483439 A CN201510483439 A CN 201510483439A CN 105023943 A CN105023943 A CN 105023943A
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- 230000005684 electric field Effects 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 7
- 230000001413 cellular effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101100207343 Antirrhinum majus 1e20 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN201510483439.9A CN105023943B (zh) | 2015-08-10 | 2015-08-10 | 一种纵向rc‑igbt器件 |
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CN201510483439.9A CN105023943B (zh) | 2015-08-10 | 2015-08-10 | 一种纵向rc‑igbt器件 |
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CN105023943A true CN105023943A (zh) | 2015-11-04 |
CN105023943B CN105023943B (zh) | 2018-01-09 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870179A (zh) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN107591443A (zh) * | 2017-09-22 | 2018-01-16 | 广东美的制冷设备有限公司 | 绝缘栅双极晶体管、ipm模块以及空调器 |
CN109073705A (zh) * | 2016-11-16 | 2018-12-21 | 富士电机株式会社 | 半导体测试电路、半导体测试装置和半导体测试方法 |
CN113990927A (zh) * | 2021-10-26 | 2022-01-28 | 电子科技大学 | 一种减小米勒电容的新型rc-igbt结构 |
CN115274828A (zh) * | 2022-09-28 | 2022-11-01 | 深圳芯能半导体技术有限公司 | 一种rc-ligbt器件及其制备方法、芯片 |
EP4187615A1 (en) * | 2021-11-30 | 2023-05-31 | Pakal Technologies, Inc. | Npnp layered mos-gated trench device having lowered operating voltage |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110180902A1 (en) * | 2010-01-27 | 2011-07-28 | Renesas Electronics Corporation | Reverse conducting igbt |
CN102959705A (zh) * | 2010-07-01 | 2013-03-06 | 株式会社电装 | 半导体器件 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
CN103383958A (zh) * | 2013-07-17 | 2013-11-06 | 电子科技大学 | 一种rc-igbt器件及其制作方法 |
-
2015
- 2015-08-10 CN CN201510483439.9A patent/CN105023943B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110180902A1 (en) * | 2010-01-27 | 2011-07-28 | Renesas Electronics Corporation | Reverse conducting igbt |
CN102959705A (zh) * | 2010-07-01 | 2013-03-06 | 株式会社电装 | 半导体器件 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
CN103383958A (zh) * | 2013-07-17 | 2013-11-06 | 电子科技大学 | 一种rc-igbt器件及其制作方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870179A (zh) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN105870179B (zh) * | 2016-04-26 | 2019-01-01 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN109073705A (zh) * | 2016-11-16 | 2018-12-21 | 富士电机株式会社 | 半导体测试电路、半导体测试装置和半导体测试方法 |
US10996260B2 (en) | 2016-11-16 | 2021-05-04 | Fuji Electric Co., Ltd. | Semiconductor test circuit, semiconductor test apparatus, and semiconductor test method |
CN107591443A (zh) * | 2017-09-22 | 2018-01-16 | 广东美的制冷设备有限公司 | 绝缘栅双极晶体管、ipm模块以及空调器 |
CN113990927A (zh) * | 2021-10-26 | 2022-01-28 | 电子科技大学 | 一种减小米勒电容的新型rc-igbt结构 |
CN113990927B (zh) * | 2021-10-26 | 2023-11-28 | 电子科技大学 | 一种减小米勒电容的新型rc-igbt结构 |
EP4187615A1 (en) * | 2021-11-30 | 2023-05-31 | Pakal Technologies, Inc. | Npnp layered mos-gated trench device having lowered operating voltage |
CN115274828A (zh) * | 2022-09-28 | 2022-11-01 | 深圳芯能半导体技术有限公司 | 一种rc-ligbt器件及其制备方法、芯片 |
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CN105023943B (zh) | 2018-01-09 |
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Effective date of registration: 20190528 Address after: Room 1108-1109, 570 Midsummer Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 200120 Patentee after: Cuizhan Microelectronics (Shanghai) Co.,Ltd. Address before: 611731 No. 2006 West Yuan Road, Chengdu high tech Zone (West District), Sichuan Patentee before: University of Electronic Science and Technology of China |
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Effective date of registration: 20200403 Address after: Unit e4-032, artificial intelligence Industrial Park, No. 88, Jinjihu Avenue, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot free trade zone 215021 Patentee after: Suzhou cuizhan Microelectronics Co.,Ltd. Address before: Room 1108-1109, 570 Midsummer Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 200120 Patentee before: Cuizhan Microelectronics (Shanghai) Co.,Ltd. |
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Effective date of registration: 20240326 Address after: Building B3, No. 8 Xinda Road, Huimin Street, Jiashan County, Jiaxing City, Zhejiang Province, 314100 Patentee after: Zhejiang cuizhan Microelectronics Co.,Ltd. Country or region after: China Address before: 215021 China (Jiangsu) pilot Free Trade Zone Suzhou area unit e4-032, artificial intelligence Industrial Park, 88 Jinjihu Avenue, Suzhou Industrial Park Patentee before: Suzhou cuizhan Microelectronics Co.,Ltd. Country or region before: China |