CN105023943B - 一种纵向rc‑igbt器件 - Google Patents
一种纵向rc‑igbt器件 Download PDFInfo
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- CN105023943B CN105023943B CN201510483439.9A CN201510483439A CN105023943B CN 105023943 B CN105023943 B CN 105023943B CN 201510483439 A CN201510483439 A CN 201510483439A CN 105023943 B CN105023943 B CN 105023943B
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- 210000004209 hair Anatomy 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000000844 transformation Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 8
- 230000001413 cellular effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 101100207343 Antirrhinum majus 1e20 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510483439.9A CN105023943B (zh) | 2015-08-10 | 2015-08-10 | 一种纵向rc‑igbt器件 |
Applications Claiming Priority (1)
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CN201510483439.9A CN105023943B (zh) | 2015-08-10 | 2015-08-10 | 一种纵向rc‑igbt器件 |
Publications (2)
Publication Number | Publication Date |
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CN105023943A CN105023943A (zh) | 2015-11-04 |
CN105023943B true CN105023943B (zh) | 2018-01-09 |
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CN201510483439.9A Active CN105023943B (zh) | 2015-08-10 | 2015-08-10 | 一种纵向rc‑igbt器件 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870179B (zh) * | 2016-04-26 | 2019-01-01 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
JP6702429B2 (ja) | 2016-11-16 | 2020-06-03 | 富士電機株式会社 | 半導体試験回路、半導体試験装置および半導体試験方法 |
CN107591443A (zh) * | 2017-09-22 | 2018-01-16 | 广东美的制冷设备有限公司 | 绝缘栅双极晶体管、ipm模块以及空调器 |
CN113990927B (zh) * | 2021-10-26 | 2023-11-28 | 电子科技大学 | 一种减小米勒电容的新型rc-igbt结构 |
TW202329459A (zh) * | 2021-11-30 | 2023-07-16 | 美商帕可科技有限公司 | 具有降低的操作電壓之NPNP分層的金氧半閘控(MOS-gated)溝槽裝置 |
CN115274828B (zh) * | 2022-09-28 | 2023-01-03 | 深圳芯能半导体技术有限公司 | 一种rc-ligbt器件及其制备方法、芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102959705A (zh) * | 2010-07-01 | 2013-03-06 | 株式会社电装 | 半导体器件 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
CN103383958A (zh) * | 2013-07-17 | 2013-11-06 | 电子科技大学 | 一种rc-igbt器件及其制作方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5587622B2 (ja) * | 2010-01-27 | 2014-09-10 | ルネサスエレクトロニクス株式会社 | 逆導通型igbt |
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2015
- 2015-08-10 CN CN201510483439.9A patent/CN105023943B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102959705A (zh) * | 2010-07-01 | 2013-03-06 | 株式会社电装 | 半导体器件 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
CN103383958A (zh) * | 2013-07-17 | 2013-11-06 | 电子科技大学 | 一种rc-igbt器件及其制作方法 |
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CN105023943A (zh) | 2015-11-04 |
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Effective date of registration: 20190528 Address after: Room 1108-1109, 570 Midsummer Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 200120 Patentee after: Cuizhan Microelectronics (Shanghai) Co.,Ltd. Address before: 611731 No. 2006 West Yuan Road, Chengdu high tech Zone (West District), Sichuan Patentee before: University of Electronic Science and Technology of China |
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Effective date of registration: 20200403 Address after: Unit e4-032, artificial intelligence Industrial Park, No. 88, Jinjihu Avenue, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot free trade zone 215021 Patentee after: Suzhou cuizhan Microelectronics Co.,Ltd. Address before: Room 1108-1109, 570 Midsummer Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 200120 Patentee before: Cuizhan Microelectronics (Shanghai) Co.,Ltd. |
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Effective date of registration: 20240326 Address after: Building B3, No. 8 Xinda Road, Huimin Street, Jiashan County, Jiaxing City, Zhejiang Province, 314100 Patentee after: Zhejiang cuizhan Microelectronics Co.,Ltd. Country or region after: China Address before: 215021 China (Jiangsu) pilot Free Trade Zone Suzhou area unit e4-032, artificial intelligence Industrial Park, 88 Jinjihu Avenue, Suzhou Industrial Park Patentee before: Suzhou cuizhan Microelectronics Co.,Ltd. Country or region before: China |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A longitudinal RC-IGBT device Granted publication date: 20180109 Pledgee: Jiaxing Bank Co.,Ltd. Yangtze River Delta integration demonstration zone (Zhejiang Jiashan) sub branch Pledgor: Zhejiang cuizhan Microelectronics Co.,Ltd. Registration number: Y2024330001467 |
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