CN103650148A - 绝缘栅双极晶体管 - Google Patents
绝缘栅双极晶体管 Download PDFInfo
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- CN103650148A CN103650148A CN201280033829.0A CN201280033829A CN103650148A CN 103650148 A CN103650148 A CN 103650148A CN 201280033829 A CN201280033829 A CN 201280033829A CN 103650148 A CN103650148 A CN 103650148A
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- 230000004888 barrier function Effects 0.000 claims description 42
- 239000002019 doping agent Substances 0.000 claims description 29
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- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 14
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- 230000005516 deep trap Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11173059 | 2011-07-07 | ||
EP11173059.4 | 2011-07-07 | ||
PCT/EP2012/063303 WO2013004829A1 (en) | 2011-07-07 | 2012-07-06 | Insulated gate bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103650148A true CN103650148A (zh) | 2014-03-19 |
CN103650148B CN103650148B (zh) | 2016-06-01 |
Family
ID=44802583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280033829.0A Active CN103650148B (zh) | 2011-07-07 | 2012-07-06 | 绝缘栅双极晶体管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9105680B2 (zh) |
JP (1) | JP5985624B2 (zh) |
KR (1) | KR101840903B1 (zh) |
CN (1) | CN103650148B (zh) |
DE (1) | DE112012002823B4 (zh) |
GB (1) | GB2506075B (zh) |
WO (1) | WO2013004829A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943673A (zh) * | 2014-05-04 | 2014-07-23 | 常州中明半导体技术有限公司 | 具有不连续沟槽的沟槽双极型晶体管 |
CN107251198A (zh) * | 2015-01-27 | 2017-10-13 | Abb瑞士股份有限公司 | 绝缘栅功率半导体装置以及用于制造这种装置的方法 |
CN109659351A (zh) * | 2017-10-10 | 2019-04-19 | Abb瑞士股份有限公司 | 绝缘栅双极晶体管 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103650148B (zh) * | 2011-07-07 | 2016-06-01 | Abb技术有限公司 | 绝缘栅双极晶体管 |
JP6026528B2 (ja) | 2011-07-14 | 2016-11-16 | アーベーベー・テヒノロギー・アーゲー | 絶縁ゲート型バイポーラトランジスタ |
JP2014160720A (ja) * | 2013-02-19 | 2014-09-04 | Sanken Electric Co Ltd | 半導体装置 |
JP6256075B2 (ja) * | 2014-02-13 | 2018-01-10 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6354458B2 (ja) * | 2014-08-27 | 2018-07-11 | 富士電機株式会社 | 半導体装置 |
CN107534053A (zh) * | 2015-01-14 | 2018-01-02 | 三菱电机株式会社 | 半导体装置及其制造方法 |
JP6729999B2 (ja) * | 2015-02-16 | 2020-07-29 | 富士電機株式会社 | 半導体装置 |
KR101748141B1 (ko) | 2015-02-17 | 2017-06-19 | 전남대학교산학협력단 | 절연 게이트 양극성 트랜지스터 |
JP5925928B1 (ja) * | 2015-02-26 | 2016-05-25 | 日本航空電子工業株式会社 | 電気接続構造および電気接続部材 |
CN105047706B (zh) * | 2015-08-28 | 2019-02-05 | 国网智能电网研究院 | 一种低通态损耗igbt及其制造方法 |
US9780202B2 (en) * | 2015-08-31 | 2017-10-03 | Ixys Corporation | Trench IGBT with waved floating P-well electron injection |
US10367085B2 (en) | 2015-08-31 | 2019-07-30 | Littelfuse, Inc. | IGBT with waved floating P-Well electron injection |
CN109768080B (zh) * | 2019-01-23 | 2021-03-30 | 电子科技大学 | 一种具有mos控制空穴通路的igbt器件 |
GB2592927A (en) * | 2020-03-10 | 2021-09-15 | Mqsemi Ag | Semiconductor device with fortifying layer |
GB2602663A (en) * | 2021-01-11 | 2022-07-13 | Mqsemi Ag | Semiconductor device |
US11610987B2 (en) * | 2021-05-18 | 2023-03-21 | Pakal Technologies, Inc | NPNP layered MOS-gated trench device having lowered operating voltage |
US20230021169A1 (en) * | 2021-07-13 | 2023-01-19 | Analog Power Conversion LLC | Semiconductor device with deep trench and manufacturing process thereof |
US11935923B2 (en) | 2021-08-24 | 2024-03-19 | Globalfoundries U.S. Inc. | Lateral bipolar transistor with gated collector |
US11935928B2 (en) | 2022-02-23 | 2024-03-19 | Globalfoundries U.S. Inc. | Bipolar transistor with self-aligned asymmetric spacer |
Citations (6)
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US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
US20050045960A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor incorporating diode |
EP1811572A2 (en) * | 1999-02-17 | 2007-07-25 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
US20100039844A1 (en) * | 2008-08-12 | 2010-02-18 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
WO2010109596A1 (ja) * | 2009-03-24 | 2010-09-30 | トヨタ自動車株式会社 | 半導体装置 |
US20110079819A1 (en) * | 2009-10-06 | 2011-04-07 | Wei-Chieh Lin | Igbt with fast reverse recovery time rectifier and manufacturing method thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0837508A3 (en) * | 1996-10-18 | 1999-01-20 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
JP4310017B2 (ja) * | 1999-02-17 | 2009-08-05 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
US20070063269A1 (en) * | 2005-09-20 | 2007-03-22 | International Rectifier Corp. | Trench IGBT with increased short circuit capability |
JP2007134625A (ja) * | 2005-11-14 | 2007-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5235443B2 (ja) * | 2008-02-13 | 2013-07-10 | 株式会社日立製作所 | トレンチゲート型半導体装置 |
JP4688901B2 (ja) * | 2008-05-13 | 2011-05-25 | 三菱電機株式会社 | 半導体装置 |
JP5963385B2 (ja) * | 2008-11-26 | 2016-08-03 | 富士電機株式会社 | 半導体装置 |
JP5686507B2 (ja) | 2009-08-12 | 2015-03-18 | 株式会社 日立パワーデバイス | トレンチゲート型半導体装置 |
JP5452195B2 (ja) * | 2009-12-03 | 2014-03-26 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
EP2523217A4 (en) * | 2010-01-04 | 2014-06-25 | Hitachi Ltd | SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTING DEVICE USING THE SAME |
WO2011117285A1 (en) * | 2010-03-23 | 2011-09-29 | Abb Technology Ag | Power semiconductor device |
CN103650148B (zh) * | 2011-07-07 | 2016-06-01 | Abb技术有限公司 | 绝缘栅双极晶体管 |
JP6026528B2 (ja) * | 2011-07-14 | 2016-11-16 | アーベーベー・テヒノロギー・アーゲー | 絶縁ゲート型バイポーラトランジスタ |
DE112013001487T5 (de) * | 2012-03-16 | 2014-12-04 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
WO2014013821A1 (ja) * | 2012-07-18 | 2014-01-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
-
2012
- 2012-07-06 CN CN201280033829.0A patent/CN103650148B/zh active Active
- 2012-07-06 GB GB1400075.6A patent/GB2506075B/en active Active
- 2012-07-06 DE DE112012002823.6T patent/DE112012002823B4/de active Active
- 2012-07-06 WO PCT/EP2012/063303 patent/WO2013004829A1/en active Application Filing
- 2012-07-06 KR KR1020147003224A patent/KR101840903B1/ko active IP Right Grant
- 2012-07-06 JP JP2014517832A patent/JP5985624B2/ja active Active
-
2014
- 2014-01-07 US US14/149,412 patent/US9105680B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
EP1811572A2 (en) * | 1999-02-17 | 2007-07-25 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
US20050045960A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor incorporating diode |
US20100039844A1 (en) * | 2008-08-12 | 2010-02-18 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
WO2010109596A1 (ja) * | 2009-03-24 | 2010-09-30 | トヨタ自動車株式会社 | 半導体装置 |
US20110079819A1 (en) * | 2009-10-06 | 2011-04-07 | Wei-Chieh Lin | Igbt with fast reverse recovery time rectifier and manufacturing method thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943673A (zh) * | 2014-05-04 | 2014-07-23 | 常州中明半导体技术有限公司 | 具有不连续沟槽的沟槽双极型晶体管 |
CN107251198A (zh) * | 2015-01-27 | 2017-10-13 | Abb瑞士股份有限公司 | 绝缘栅功率半导体装置以及用于制造这种装置的方法 |
CN107251198B (zh) * | 2015-01-27 | 2020-08-14 | Abb电网瑞士股份公司 | 绝缘栅功率半导体装置以及用于制造这种装置的方法 |
CN109659351A (zh) * | 2017-10-10 | 2019-04-19 | Abb瑞士股份有限公司 | 绝缘栅双极晶体管 |
CN109659351B (zh) * | 2017-10-10 | 2023-05-09 | 日立能源瑞士股份公司 | 绝缘栅双极晶体管 |
Also Published As
Publication number | Publication date |
---|---|
JP5985624B2 (ja) | 2016-09-06 |
GB2506075A (en) | 2014-03-19 |
GB201400075D0 (en) | 2014-02-19 |
WO2013004829A1 (en) | 2013-01-10 |
KR101840903B1 (ko) | 2018-03-21 |
GB2506075B (en) | 2015-09-23 |
KR20140046018A (ko) | 2014-04-17 |
CN103650148B (zh) | 2016-06-01 |
DE112012002823B4 (de) | 2017-09-07 |
JP2014523122A (ja) | 2014-09-08 |
DE112012002823T5 (de) | 2014-08-21 |
US20140124829A1 (en) | 2014-05-08 |
US9105680B2 (en) | 2015-08-11 |
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