TW473988B - Semiconductor integrated circuit device and manufacturing method of the same - Google Patents

Semiconductor integrated circuit device and manufacturing method of the same Download PDF

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Publication number
TW473988B
TW473988B TW089124195A TW89124195A TW473988B TW 473988 B TW473988 B TW 473988B TW 089124195 A TW089124195 A TW 089124195A TW 89124195 A TW89124195 A TW 89124195A TW 473988 B TW473988 B TW 473988B
Authority
TW
Taiwan
Prior art keywords
gate electrode
insulating film
electric field
field effect
effect transistor
Prior art date
Application number
TW089124195A
Other languages
English (en)
Chinese (zh)
Inventor
Masahito Takahashi
Shiro Akamatsu
Akihiko Satoh
Fukuo Owada
Masataka Kato
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW473988B publication Critical patent/TW473988B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW089124195A 2000-02-28 2000-11-15 Semiconductor integrated circuit device and manufacturing method of the same TW473988B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
TW473988B true TW473988B (en) 2002-01-21

Family

ID=18573949

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089124195A TW473988B (en) 2000-02-28 2000-11-15 Semiconductor integrated circuit device and manufacturing method of the same

Country Status (4)

Country Link
US (2) US6420754B2 (https=)
JP (1) JP4068781B2 (https=)
KR (1) KR100549475B1 (https=)
TW (1) TW473988B (https=)

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Also Published As

Publication number Publication date
JP4068781B2 (ja) 2008-03-26
US6423584B2 (en) 2002-07-23
US20010024859A1 (en) 2001-09-27
US6420754B2 (en) 2002-07-16
KR20010085679A (ko) 2001-09-07
JP2001244424A (ja) 2001-09-07
KR100549475B1 (ko) 2006-02-08
US20010020718A1 (en) 2001-09-13

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