JP4068781B2 - 半導体集積回路装置および半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置および半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4068781B2
JP4068781B2 JP2000052436A JP2000052436A JP4068781B2 JP 4068781 B2 JP4068781 B2 JP 4068781B2 JP 2000052436 A JP2000052436 A JP 2000052436A JP 2000052436 A JP2000052436 A JP 2000052436A JP 4068781 B2 JP4068781 B2 JP 4068781B2
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Japan
Prior art keywords
integrated circuit
field effect
gate electrode
circuit device
semiconductor integrated
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Expired - Fee Related
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JP2000052436A
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English (en)
Japanese (ja)
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JP2001244424A5 (https=
JP2001244424A (ja
Inventor
正人 高橋
史郎 赤松
聡彦 佐藤
福夫 大和田
正高 加藤
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2000052436A priority Critical patent/JP4068781B2/ja
Priority to TW089124195A priority patent/TW473988B/zh
Priority to US09/791,832 priority patent/US6420754B2/en
Priority to KR1020010010113A priority patent/KR100549475B1/ko
Priority to US09/811,598 priority patent/US6423584B2/en
Publication of JP2001244424A publication Critical patent/JP2001244424A/ja
Publication of JP2001244424A5 publication Critical patent/JP2001244424A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000052436A 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法 Expired - Fee Related JP4068781B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法
TW089124195A TW473988B (en) 2000-02-28 2000-11-15 Semiconductor integrated circuit device and manufacturing method of the same
US09/791,832 US6420754B2 (en) 2000-02-28 2001-02-26 Semiconductor integrated circuit device
KR1020010010113A KR100549475B1 (ko) 2000-02-28 2001-02-27 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법
US09/811,598 US6423584B2 (en) 2000-02-28 2001-03-20 method for forming capacitors and field effect transistors in a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005107055A Division JP2005260253A (ja) 2005-04-04 2005-04-04 半導体集積回路装置およびその製造方法
JP2006325511A Division JP2007123917A (ja) 2006-12-01 2006-12-01 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001244424A JP2001244424A (ja) 2001-09-07
JP2001244424A5 JP2001244424A5 (https=) 2005-09-15
JP4068781B2 true JP4068781B2 (ja) 2008-03-26

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JP2000052436A Expired - Fee Related JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6420754B2 (https=)
JP (1) JP4068781B2 (https=)
KR (1) KR100549475B1 (https=)
TW (1) TW473988B (https=)

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Also Published As

Publication number Publication date
US6423584B2 (en) 2002-07-23
TW473988B (en) 2002-01-21
US20010024859A1 (en) 2001-09-27
US6420754B2 (en) 2002-07-16
KR20010085679A (ko) 2001-09-07
JP2001244424A (ja) 2001-09-07
KR100549475B1 (ko) 2006-02-08
US20010020718A1 (en) 2001-09-13

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