KR100549475B1 - 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 - Google Patents

반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 Download PDF

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Publication number
KR100549475B1
KR100549475B1 KR1020010010113A KR20010010113A KR100549475B1 KR 100549475 B1 KR100549475 B1 KR 100549475B1 KR 1020010010113 A KR1020010010113 A KR 1020010010113A KR 20010010113 A KR20010010113 A KR 20010010113A KR 100549475 B1 KR100549475 B1 KR 100549475B1
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South Korea
Prior art keywords
gate electrode
field effect
insulating film
effect transistor
gate
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Expired - Fee Related
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KR1020010010113A
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English (en)
Korean (ko)
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KR20010085679A (ko
Inventor
다까하시마사히또
아까마쯔시로
사또아끼히꼬
오와다후꾸오
가또마사따까
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010085679A publication Critical patent/KR20010085679A/ko
Application granted granted Critical
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Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020010010113A 2000-02-28 2001-02-27 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 Expired - Fee Related KR100549475B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-052436 2000-02-28
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
KR20010085679A KR20010085679A (ko) 2001-09-07
KR100549475B1 true KR100549475B1 (ko) 2006-02-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010010113A Expired - Fee Related KR100549475B1 (ko) 2000-02-28 2001-02-27 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법

Country Status (4)

Country Link
US (2) US6420754B2 (https=)
JP (1) JP4068781B2 (https=)
KR (1) KR100549475B1 (https=)
TW (1) TW473988B (https=)

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Publication number Publication date
JP4068781B2 (ja) 2008-03-26
US6423584B2 (en) 2002-07-23
TW473988B (en) 2002-01-21
US20010024859A1 (en) 2001-09-27
US6420754B2 (en) 2002-07-16
KR20010085679A (ko) 2001-09-07
JP2001244424A (ja) 2001-09-07
US20010020718A1 (en) 2001-09-13

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