TW201635591A - 側照式發光二極體結構及其製造方法 - Google Patents

側照式發光二極體結構及其製造方法 Download PDF

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TW201635591A
TW201635591A TW104125226A TW104125226A TW201635591A TW 201635591 A TW201635591 A TW 201635591A TW 104125226 A TW104125226 A TW 104125226A TW 104125226 A TW104125226 A TW 104125226A TW 201635591 A TW201635591 A TW 201635591A
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conductive
substrate
wafer
light
emitting diode
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TW104125226A
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TWI657597B (zh
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洪政暐
林育鋒
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新世紀光電股份有限公司
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Priority to US15/073,715 priority Critical patent/US9882096B2/en
Priority to CN201610156784.6A priority patent/CN105990507B/zh
Priority to JP2016055850A priority patent/JP2016181689A/ja
Publication of TW201635591A publication Critical patent/TW201635591A/zh
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Abstract

一種側照式發光二極體結構及其製造方法。結構包括一基板、一電極結構、一晶片、一膠體層和一螢光層。基板具有相對的一上表面和一下表面以及連接上表面和下表面之一側表面。電極結構至少包括：兩個第一導電部相隔設置於基板之上表面、兩個第二導電部相隔設置於基板之下表面、和兩個導電孔垂直貫穿基板且相隔設置，各導電孔分別連接第一導電部和第二導電部，且導電孔係暴露於基板之側表面。晶片具有相對的一第一表面與一第二表面，且晶片之第二表面設置於兩第一導電部上。膠體層覆蓋基板之上表面和包覆晶片，膠體層之頂表面係暴露出晶片之第一表面且切齊晶片之第一表面。螢光層位於膠體層之頂表面上並覆蓋晶片之第一表面。

Description

側照式發光二極體結構及其製造方法
本發明有關於一種發光二極體結構及其製造方法，特別是一種側照式發光二極體結構及其製造方法。
節能環保的發光二極體其應用十分廣泛，除了日常生活中隨處可見的產品可能設置有發光二極體，如一般照明、電腦或可攜式電子產品螢幕之顯示器、看板、藝術作品與應用，在一些特殊的半導體製程中也利用發光二極體做為照光來源，例如紫外光發光二極體應用於紫外光曝光機、製作紫外光燈板等。
一般來說，發光二極體晶片是配置於陶瓷或金屬材料所形成之基板上，並以膠體封裝和包覆發光二極體形成封裝結構，以避免發光二極體直接暴露於大氣中而使晶片快速老化。而根據發光二極體晶片之封裝結構與外部元件電性連接後，出光面和連接外部元件之設置面兩者之間的相對位置，又可分為直下式(direct lighting)(i.e.出光面與設置面分別位於相對之兩平面)和側照式(edge lighting)發光二極體結構(出光面與設置面例如呈垂 直)兩種。無論是何種結構，相關業者無不希望能發展出能維持甚至增進單顆結構之產品良率和電性表現，且在與外部元件組裝時亦能具有高對位精準度和組裝效率。並且能以步驟簡易而適合量產的製造方法來製作為最佳。
本發明係有關於一種側照式發光二極體結構及其製造方法。透過實施例之設計可使側照式發光二極體結構單體中具有暴露於基板之側表面的電極結構，如形成連續導電接面的導電孔。
本發明係提出一種側照式發光二極體，包括一基板、一電極結構、一晶片、一膠體層和一螢光層。基板具有相對的一上表面和一下表面以及連接上表面和下表面之一側表面。電極結構至少包括：兩個第一導電部相隔設置於基板之上表面、兩個第二導電部相隔設置於基板之下表面、和兩個導電孔垂直貫穿基板且相隔設置，各導電孔分別連接第一導電部和第二導電部，且導電孔係暴露於基板之側表面。晶片具有相對的一第一表面與一第二表面，且晶片之第二表面設置於兩第一導電部上。膠體層覆蓋基板之上表面和包覆晶片，膠體層之頂表面係暴露出晶片之第一表面且切齊晶片之第一表面。螢光層位於膠體層之頂表面上並覆蓋晶片之第一表面。
本發明係提出一種側照式發光二極體之製造方法，包括提供一基板，基板具有相對的一上表面和一下表面，基板包括複數個單體區域(unit regions)。且形成一電極結構於基板處， 其中電極結構對應於各單體區域處至少包括：兩個第一導電部相隔設置於基板之上表面、兩個第二導電部相隔設置於基板之下表面；和兩個導電孔垂直貫穿基板且相隔設置，各導電孔分別連接第一導電部和第二導電部。分隔設置複數個晶片於基板之上表面上，其中各單體區域中之晶片具有相對的一第一表面與一第二表面，且晶片之第二表面設置於兩第一導電部上。形成一膠體材料於基板之上表面上並覆蓋基板上表面和晶片。移除部分之膠體材料以形成一膠體層，膠體層之頂表面係暴露出晶片之第一表面並切齊晶片之第一表面。塗佈一螢光材料於膠體層之頂表面，以於各單體區域中形成一螢光層覆蓋晶片之第一表面。切割膠體層、導電孔與基板，以形成複數個分離的發光二極體，其中各發光二極體之導電孔具有接面自第一導電部延伸至第二導電部，且該些接面暴露於基板之一側表面並與側表面切齊，其中側表面連接上下表面。
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下：
10‧‧‧基板
101‧‧‧上表面
102‧‧‧下表面
103‧‧‧邊緣
104‧‧‧側表面
11‧‧‧電極結構
111a、111b‧‧‧第一導電部
1113a、1113b‧‧‧第一導電部之外邊緣
112a、112b‧‧‧第二導電部
1130a、1130b‧‧‧切割前之導電孔
113a、113b‧‧‧切割後之導電孔
20‧‧‧晶片
201‧‧‧第一表面
202‧‧‧第二表面
213‧‧‧晶片側緣
30‧‧‧膠體材料
31‧‧‧膠體層
311‧‧‧頂表面
313‧‧‧膠體層側緣
40‧‧‧螢光材料
41‧‧‧螢光層
413‧‧‧螢光層側緣
Ur‧‧‧單體區域
Lc‧‧‧導電孔之長度
L1‧‧‧膠體層之頂表面的長度
W1‧‧‧膠體層之頂表面的寬度
H0‧‧‧基板之厚度
Hp‧‧‧螢光層之厚度
H1‧‧‧螢光層頂面到基板之下表面之厚度
WP‧‧‧同一行相鄰單體區域之間距
Lg‧‧‧同一列之相鄰單體區域中兩導電孔的最短距離
LT‧‧‧未切割前基板的長度
WT‧‧‧未切割前基板的寬度
D1‧‧‧第一切割方向
D2‧‧‧第二切割方向
Cx‧‧‧第一切割道
Cy‧‧‧第二切割道
第1圖為本揭露一實施例之一側照式發光二極體晶片之單顆結構示意圖。
第2圖為第1圖之側照式發光二極體晶片之上視圖。
第3圖為沿第2圖中剖面線A-A’所繪示之側照式發光二極體晶片之剖面圖。
第4圖為沿第2圖中剖面線B-B’所繪示之側照式發光二極體晶片之剖面圖。
第5A~5F圖為本揭露一實施例之側照式發光二極體之製造方法。
第6圖繪示本揭露一實施例中多個發光二極體之電極結構做矩陣排列以及相應之兩軸向切割道之位置的示意圖。
本揭露之實施例係提出一種側照式發光二極體及其製造方法。以下係參照所附圖式詳細敘述本揭露之實施態樣。需注意的是，實施例所提出的結構和內容僅為舉例說明之用，本揭露欲保護之範圍並非僅限於所述之態樣。實施例中相同或類似的標號係用以標示相同或類似之部分。需注意的是，本揭露並非顯示出所有可能的實施例。可在不脫離本揭露之精神和範圍內對結構加以變化與修飾，以符合實際應用所需。因此，未於本揭露提出的其他實施態樣也可能可以應用。再者，圖式係已簡化以利清楚說明實施例之內容，圖式上的尺寸比例並非按照實際產品等比例繪製。因此，說明書和圖示內容僅作敘述實施例之用，而非作為限縮本揭露保護範圍之用。
第1圖為本揭露一實施例之一側照式發光二極體晶片之單顆結構示意圖。第2圖為第1圖之側照式發光二極體晶片之上視圖。第3圖為沿第2圖中剖面線A-A’所繪示之側照式發光二極體晶片之剖面圖。第4圖為沿第2圖中剖面線B-B’所繪示之側照式發光二極體晶片之剖面圖。請同時參照第1-4圖。
側照式發光二極體1包括一基板10、一電極結構11、一晶片(chip)20、一膠體層31和一螢光層41。基板10具有相對的一上表面101和一下表面102以及連接上表面101和下表面102之一側表面104。在基板10的上表面101和下表面102係分別形成導電線路和可連接上下表面的導電孔洞。如第1、4圖所示，電極結構11至少包括兩個第一導電部111a、111b相隔設置於基板10之上表面101、兩個第二導電部111a、111b相隔設置於基板10之下表面102、和兩個導電孔113a、113b垂直貫穿基板10且相隔設置，其中各導電孔分別連接第一導電部和第二導電部，例如導電孔113a連接第一導電部111a和第二導電部112a，導電孔113b連接第一導電部111b和第二導電部112b。
再者，導電孔之接面係暴露於基板10之側表面104。如第1、4圖所示，導電孔113a/113b之接面係自第一導電部111a/111b延伸至第二導電部112a/112b並暴露於基板10之側表面104，且導電孔113a/113b之接面與側表面104切齊。於一實施例中，填充於導電孔113a/113b的材料例如(但不限制地)是選用和第一、第二線路圖案(ex：第一導電部111a、111b和第二導電部112a/112b)相同的材料，如第1、4圖所示。再者，一實施例中，第二導電部112a/112b之長度係大於第一導電部111a/111b之長度，但本揭露並不限制於此。
晶片20具有相對的一第一表面201與一第二表面202，且晶片20之第二表面202設置(跨接)於兩第一導電部111a/111b上，如第2、3圖所示。第一表面201為晶片20之出光面。一實施例中，晶片20之第一表面201的延伸方向(例如平行 xy平面)係實質上垂直於導電孔113a/113b之接面的延伸方向(例如平行yz平面)。
膠體層31覆蓋基板10之上表面101和包覆晶片20，膠體層31之一頂表面311係暴露出晶片20之第一表面201且切齊晶片20之第一表面201，如第3圖所示。其中膠體層31之膠體材料之反射率至少大於90%。一實施例中，膠體材料之材質例如是一高分子材料，例如白色環氧樹脂封膠或矽樹脂封膠(epoxy/silicon resin)(但不以此為限)，其高反射率的特性可以遮側光，提升晶片20正向出光的效率。
螢光層41則位於膠體層31之頂表面311上並覆蓋晶片20之第一表面201。實施例中，螢光層41直接接觸且至少完全遮蔽晶片20之第一表面201。一實施例中，螢光層41面積大於晶片20面積且小於膠體層31之頂表面311的面積，如第2、3圖所示，螢光層41之兩側緣413係對應位於晶片20之兩邊緣213到兩第一導電部111a/111b的兩外邊緣1113a/1113b之間。實際製作時，可利用具有多個分隔設置開口的一遮罩，透過開口來塗佈螢光材料以在晶片20上形成適當面積之螢光層41。
實際應用實施例之側照式發光二極體1時，可透過在基板10側表面104暴露出來的導電孔113a/113b接面與一外部元件電性連接。由於導電孔113a/113b接面與晶片20之第一表面201(出光面)實質上垂直，當發光二極體之導電孔113a/113b接面設置於外部元件後可提供側照式光源，例如側照式發光二極體1可設置於導光板之側面(入光面)處，晶片20之第一表面201(出光面)朝向導光板之側面提供光源，導電孔113a/113b接面則設置於 電路板與之電性連接。
實施例中，暴露於基板10側表面104的導電孔113a/113b接面例如可透過銲錫與一外部元件電性連接。而導電孔113a/113b接面之面積係為銲錫可接觸之面積。相較於傳統發光二極體，實施例之設計可根據實際應用所需，透過調整暴露於基板10側表面104的導電孔113a/113b接面面積，例如增加導電孔113a/113b之長度Lc(第4圖)，即可增加與外部元件電性連接的接觸面積。
側照式發光二極體1的其中一組設計尺寸如下：膠體層31之頂表面311的長度L1為3.0mm，寬度W1為0.4mm(第2圖)，基板10之厚度H0為0.38mm，螢光層41之厚度Hp為0.10mm，螢光層41頂面到基板10之下表面102之厚度H1為0.69mm(第3圖)，導電孔113a/113b之長度Lc為0.57mm(第4圖)。若實際應用時透過銲錫與一外部元件電性連接時，暴露於基板10側表面104的導電孔113a/113b接面之面積即為銲錫可接觸之面積，例如0.38mm *0.57mm=0.217mm2。當然，如通常知識者可知，該些數據僅為舉例說明之用，本揭露之範圍並非僅限於該些數據，實際尺寸可根據應用條件所需做適當修改與變化。
第5A~5F圖為本揭露一實施例之側照式發光二極體之製造方法。第6圖繪示本揭露一實施例中多個發光二極體之電極結構做矩陣排列以及相應之兩軸向切割道之位置的示意圖。第5A~5F圖中係以單顆發光二極體之剖面圖示說明製造方法，以利於清楚顯示和敘述相關細節，而基板上多個發光二極體之單體區域(unit regions)之間的位置關係和切割道則可參照第6圖中排 列。第6圖係繪示兩個軸向的切割道，例如沿第一切割方向D1之第一切割道Cx和沿第二切割方向D2之第二切割道Cy，且兩切割道Cx、Cy具有一定寬度。再者，其餘因視角而無法於第5A~5F圖和第6圖顯示的部位如表面或側緣等等，請參考第1~4圖與前述內容之詳細說明。
首先，提供一基板10，基板10具有相對的一上表面101和一下表面102，且基板10包括複數個單體區域(unit regions)Ur，並形成電極結構11於基板10處。如第5A圖和第6圖中所示，電極結構11對應於各單體區域處Ur至少包括：兩個第一導電部111a、111b相隔設置於基板10之上表面101、兩個第二導電部112a、112b相隔設置於基板10之下表面102、和兩個導電孔1130a、1130b垂直貫穿基板10並相隔設置，且各導電孔1130a/1130b分別連接第一導電部111a/111b和第二導電部112a/112b。
一實施例中，例如是選用具有低熱膨脹係數之一陶瓷(ceramic)基板10，在陶瓷基板的上下表面分別鋪設第一線路圖案(trace pattern)和第二線路圖案，並以雷射鑽孔以供導電材料如金屬進行電鍍或直接填充其中，而形成貫穿基板10並連通上下線路的導電孔1130a/1130b。其中雷射鑽孔形成貫孔後，是在貫孔內填滿導電材料而形成導電孔1130a/1130b。導電材料例如是單一金屬或是包括兩種或兩種以上的複合金屬作貫孔填充皆可。一實施例中，導電材料係包括金、銀、銅至少其中一種。本揭露對於導電孔1130a/1130b的填充方式和材料並不多作限制。一實施例中，填充於導電孔1130a/1130b的材料係選用和第一、第二線路 圖案(ex：第一導電部111a、111b和第二導電部112a/112b)相同的材料。再者，於實施例中，切割前形成的導電孔係標示為1130a/1130b，切割後各單體中所具有的導電孔係標示為113a/113b，以利區別。
如第5B圖所示，分隔設置複數個晶片20於基板10之上表面101上，其中各單體區域處Ur中之晶片20具有相對的第一表面(出光面)201與第二表面202，且晶片20之第二表面202設置於兩第一導電部111a、111b上。實施例中，晶片20例如是覆晶型態，以貼覆方式設置於線路圖案上，如跨接於第一導電部111a、111b上。
如第5C圖所示，形成一膠體材料30於基板10之上表面101，膠體材料30並覆蓋基板10上表面101、該些晶片20和導電孔1130a/1130b。實施例中，膠體材料30例如是白色環氧樹脂封膠或矽樹脂封膠(epoxy or silicon resin)。一實施例中，例如經由矽樹脂封膠加壓成形的方式，包覆晶片20和基板10上表面101。
如第5D圖所示，移除部分膠體材料30以形成一膠體層31，膠體層31之頂表面311係暴露出晶片20之第一表面201並切齊晶片20之第一表面201。一實施例中，例如利用研磨(polishing)方式移除部分膠體材料30以暴露出晶片20之第一表面201。
如第5E圖所示，塗佈一螢光材料40於膠體層31之頂表面311，以於各單體區域Ur的適當區域中形成一螢光層41其中螢光層41至少覆蓋晶片20之第一表面201。實施例中， 塗佈螢光材料40之步驟中，例如是：提供一遮罩(未顯示)於膠體層上方，遮罩具有分隔設置的複數個開口各對應晶片20之位置，且透過遮罩之開口塗佈(如噴淋)螢光材料40於膠體層31之頂表面311上，以形成螢光層41至少完全覆蓋晶片20之第一表面201。一實施例中，遮罩開口的面積大於晶片20的面積。一實施例中，螢光層41係直接接觸晶片20之第一表面201。再者，一實施例中，切割步驟後形成之各發光二極體中，螢光層41的面積係大於晶片20面積而小於膠體層31之頂表面311的面積。各單體區域Ur中形成螢光層41的面積例如是對應遮罩之開口面積，並可依應用實際條件所需而作相應調整。
之後，如第5F圖和第6圖中所示，切割(dicing)膠體層31、基板20與導電孔1130a/1130b，以形成複數個分離的單顆發光二極體之結構。切割後，各發光二極體之導電孔113a/113b(為切割前原導電孔1130a/1130b之一部分)具有接面自第一導電部延伸至第二導電部，且這些接面暴露於基板10之側表面104(側表面104連接上表面101和下表面102)並與側表面104切齊。
實施例中，各單體區域Ur中，兩導電孔1130a/1130b與兩第一導電部111a/111b係部分重疊，如第5A、5B、6圖所示，進行切割時係切除導電孔113a/113b不與第一導電部111a/111b重疊的部分，以形成暴露於基板10之側表面104處的接面。一實施例中，如第5A、5B、6圖所示，各單體區域Ur之兩導電孔1130a/1130b係分別對應兩第一導電部111a/111b之第一邊緣(同側邊緣)1110a/1110b，且對應第一導電部111a/111b之導電孔 1130a/1130b長軸係沿第一方向(如x方向)排列，且第一方向平行於一切割方向(如第6圖中切割道Cx所行之第一切割方向D1)。一實施例中，導電孔1130a/1130b之長軸例如是分別與第一導電部111a/111b之第一邊緣1110a/1110b重疊，因此進行膠體層31與基板20之切割步驟時，如第6圖中切割道Cx係沿第一邊緣1110a/1110b切割。因此，切割後各發光二極體單體之導電孔113a/113b可形成如第1圖所示之暴露於基板10之側表面104處的接面。一實施例中，導電孔113a/113b之接面係垂直於第一導電部111a/111b和第二導電部112a/112b。由於之前雷射鑽孔形成貫孔後，是在貫孔內填滿導電材料而形成導電孔1130a/1130b，因此導電孔1130a/1130b經切割後，所暴露於基板10側表面104處的接面是整面的(i.e.導電材料連續面)並與基板10側表面104切齊，如第1圖所示。
另外，雖然實施例及圖示中係繪示以長軸甚大於短軸之長形柱體作貫孔形狀以形成導電孔1130a/1130b之說明，但本揭露並不特別限制其形狀，在基板20中形成的導電孔1130a/1130b只要與電極(如第一導電部111a/111b)的邊緣有部分重疊，使其在經過形成單體的切割步驟後可形成暴露於基板10側表面104處連續性的導電接面，即屬本揭露可實施之態樣。導電孔1130a/1130b之形狀(例如於基板10之上表面101的面積和形狀，包括長短軸之尺寸等等)都可依實際應用之條件例如所欲形成的接面面積而定，本揭露對此並不多做限制。
一實施例中，其中一組設計尺寸例如是，未切割前之基板10的長度LT為109.2mm，寬度WT為54.5mm(第6圖)， 基板10上定義之多個如矩陣排列狀之單體區域Ur，其位於同一行(column)的相鄰單體區域Ur可具有間距(pitch)WP為1.00mm，而位於同一列(row)的相鄰單體區域Ur中兩導電孔1130a/1130b的最短距離Lg為1.05mm。雷射鑽孔在x和y方向上的間距例如大於0.95mm。以寬度約100μm之第一切割道Cx和第二切割道Cy對基板10進行如第6圖所示之切割。其中，間距WP的大小係以切割時不造成基板不當破裂和不影響導電孔113a/113b暴露之連續性導電接面的範圍皆可應用。切割後各單體區域Ur例如是長度為3.0mm(同第2圖之L1)，寬度為0.4mm(同第2圖之W1)，而一塊厚度0.38mm的基板10，切割後可形成例如是42*30=1260個側照式發光二極體之單體。當然，如通常知識者可知，該些數據僅為舉例說明之用，本揭露之範圍並非僅限於該些數據，實際尺寸可根據應用條件所需做適當修改與變化。
另外，由於晶片20在封裝過程中反覆地進行加熱冷卻、或是封裝後晶片20在運作過程中，會造成熱膨脹係數不同的各構裝材料層在界面產生熱應力，而導致構裝材料層產生變形、脫層、崩裂、甚至晶片的毀損。因此實施例中，用來設置晶片20的基板10和覆蓋於基板10上與基板直接接觸的膠體層31，其自身的熱膨脹係數(Coefficient of thermal expansion，CTE)越小越好，而兩者之間的熱膨脹係數差異亦越小越好，以避免製程中產生的熱應力對結構產生不當的破壞。一實施例中，基板10例如是具有低的熱膨脹係數(約6ppm/℃)之陶瓷基板，而膠體層31例如是具有低熱膨脹係數的白色環氧樹脂封膠或矽樹脂封膠(矽樹脂封膠具有熱膨脹係數約14ppm/℃)。再者，陶瓷基板具有高 抗彎折強度，亦可保護晶片20不受應力拉扯，亦有應力阻擋層之功用。另外，膠體層31(ex：矽+二氧化鈦)之反射率例如是至少大於90%，以將晶片20之側光導至正向，增進正向出光的效率，提升照度。
綜合上述，實施例之側照式發光二極體中，除了膠體層31之頂表面311與晶片20之第一表面201切齊，如第3圖所示，單顆發光二極體結構中基板10亦具有兩邊緣103分別與101承載表面連接，膠體層31亦具有兩側緣313分別與頂表面311連接。在切割膠體層31與基板10完成單體切割後，膠體層31之兩側緣313切齊於基板10之兩邊緣103，導電孔113a/113b係暴露出接面於基板10之側表面104並切齊於基板10之側表面104。實際應用時，暴露於基板10側表面104的導電孔113a/113b接面可與一外部元件(ex：外部電路)作黏著以完成電性連接，形成側照式光源，即晶片20之出光面(i.e.第一表面201)與外接電極(i.e.導電孔113a/113b暴露出之接面)垂直。透過實施例提出之特殊設計，可增加外接電極與外部元件的表面黏著面積(如上述增加導電孔113a/113b之長度Lc)，進而提高與外部電路進行組裝時之對位精準度和組裝效率。特別是當發光二極體結構尺寸甚小時，實施例之設計更可使單顆結構之產品良率和電性表現，以及與外部連接時之結構上的強度和穩定度皆能顯著得到改善。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧基板
101‧‧‧上表面
102‧‧‧下表面
103‧‧‧邊緣
104‧‧‧側表面
11‧‧‧電極結構
111a、111b‧‧‧第一導電部
112a、112b‧‧‧第二導電部
113a、113b‧‧‧導電孔
31‧‧‧膠體層
311‧‧‧頂表面
313‧‧‧膠體層側緣
41‧‧‧螢光層
413‧‧‧螢光層側緣

Claims (20)

  1. 一種側照式發光二極體，包括：一基板，具有相對的一上表面和一下表面以及連接該上表面和該下表面之一側表面；一電極結構，至少包括：兩個第一導電部相隔設置於該基板之該上表面；兩個第二導電部相隔設置於該基板之該下表面；和兩個導電孔垂直貫穿該基板且相隔設置，各該導電孔分別連接該第一導電部和該第二導電部，且該些導電孔係暴露於該基板之該側表面；一晶片(chip)，具有相對的一第一表面與一第二表面，且該晶片之該第二表面設置於兩該第一導電部上；一膠體層，覆蓋該基板之該上表面和包覆該晶片，該膠體層之一頂表面係暴露出該晶片之該第一表面且切齊該晶片之該第一表面；和一螢光層，位於該膠體層之該頂表面上並覆蓋該晶片之該第一表面。
  2. 如申請專利範圍第1項所述之發光二極體，其中該些導電孔之接面係自該第一導電部延伸至該第二導電部並暴露於該基板之該側表面，該些接面與該側表面切齊。
  3. 如申請專利範圍第1項所述之發光二極體，其中該晶片之該第一表面為一出光面，該第一表面的延伸方向係實質上垂直 於該些導電孔之該些接面的延伸方向。
  4. 如申請專利範圍第1項所述之發光二極體，其中各該導電孔係為一貫孔填滿一導電材料。
  5. 如申請專利範圍第4項所述之發光二極體，其中該導電材料係包括一種或兩種以上的複合金屬。
  6. 如申請專利範圍第4項所述之發光二極體，其中該導電材料係包括金、銀、銅至少其中一種。
  7. 如申請專利範圍第1項所述之發光二極體，其中該基板具有兩邊緣分別與該上表面和該下表面連接，該膠體層具有兩側緣分別與該頂表面連接，該膠體層之該兩側緣係切齊於該基板之該兩邊緣。
  8. 如申請專利範圍第1項所述之發光二極體，其中該螢光層係直接接觸該晶片之該第一表面，且至少完全遮蔽該晶片之該第一表面。
  9. 如申請專利範圍第1項所述之發光二極體，其中該螢光層的面積實質上等於或大於該晶片的面積且小於該膠體層之該頂表面的面積。
  10. 如申請專利範圍第1項所述之發光二極體，其中該螢光層之兩側緣係對應於該晶片之兩邊緣到兩該第一導電部的兩外邊緣之間。
  11. 一種側照式發光二極體之製造方法，包括：提供一基板，該基板具有相對的一上表面和一下表面，該基板包括複數個單體區域(unit regions)；形成一電極結構於該基板處，該電極結構對應於各該單體區域處至少包括：兩個第一導電部相隔設置於該基板之該上表面；兩個第二導電部相隔設置於該基板之該下表面；和兩個導電孔垂直貫穿該基板且相隔設置，各該導電孔分別連接該第一導電部和該第二導電部；分隔設置複數個晶片於該基板之該上表面上，其中各該單體區域中之該晶片具有相對的一第一表面與一第二表面，且該晶片之該第二表面設置於兩該第一導電部上；形成一膠體材料於該基板之該上表面上並覆蓋該上表面和該些晶片；移除部分之該膠體材料以形成一膠體層，該膠體層之一頂表面係暴露出該些晶片之該些第一表面並切齊該些晶片之該些第一表面；塗佈一螢光材料於該膠體層之該頂表面，以於各該單體區域中形成一螢光層覆蓋該晶片之該第一表面；和。切割該膠體層、該些導電孔與該基板，以形成複數個分離的 發光二極體，其中各該發光二極體之該些導電孔具有接面自該些第一導電部延伸至該些第二導電部，且該些接面暴露於該基板之一側表面並與該側表面切齊，該側表面連接該上表面和該下表面。
  12. 如申請專利範圍第11項所述之製造方法，其中各該發光二極體中，該晶片之該第一表面為一出光面，該第一表面的延伸方向係實質上垂直於該些導電孔之該些接面的延伸方向。
  13. 如申請專利範圍第11項所述之製造方法，其中所形成的該電極結構中，該些導電孔係為填滿一導電材料之貫孔垂直連接該些第一導電部和該些第二導電部。
  14. 如申請專利範圍第11項所述之製造方法，其中在形成該膠體層之步驟中，係包括：利用研磨(polishing)方式移除部分之該膠體材料和暴露出該些晶片之該些第一表面。
  15. 如申請專利範圍第11項所述之製造方法，其中在塗佈該螢光材料之步驟中，係包括：提供一遮罩於該膠體層上方，該遮罩具有分隔設置的複數個開口對應該些晶片之位置，其中該些開口的面積大於該些晶片的面積；和透過該遮罩之該些開口塗佈該螢光材料於該膠體層之該頂 表面上，以形成該些螢光層至少完全覆蓋該些晶片之該些第一表面。
  16. 如申請專利範圍第11項所述之製造方法，其中切割步驟後，各該發光二極體之該螢光層的面積大於該晶片的面積而小於該膠體層之該頂表面的面積。
  17. 如申請專利範圍第11項所述之製造方法，其中各該單體區域中，兩該導電孔係分別對應兩該第一導電部(同側邊緣)之第一邊緣，且對應該些第一導電部之該些導電孔之長軸係沿第一方向排列，且該第一方向平行於一切割方向。
  18. 如申請專利範圍第17項所述之製造方法，其中該些導電孔之該些長軸與該些第一導電部之該些第一邊緣重疊，進行切割時，係沿該些第一邊緣切割。
  19. 如申請專利範圍第11項所述之製造方法，其中各該單體區域中，兩該導電孔與兩該第一導電部係部分重疊，進行切割時，係切除不與該些第一導電部重疊的部分，以形成暴露於該基板之該側表面處的該些接面，其中該些接面垂直於該些第一導電部和該些第二導電部。
  20. 如申請專利範圍第11項所述之製造方法，其中切割步驟後，各該發光二極體之該基板具有兩邊緣分別與該上表面和該 下表面連接，該膠體層具有兩側緣分別與該頂表面連接，且該膠體層之該兩側緣係切齊於該基板之該兩邊緣，該些導電孔暴露出之該些接面係切齊於該基板之該側表面。
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