CN105990508A - 发光装置及应用其的背光模块 - Google Patents

发光装置及应用其的背光模块 Download PDF

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Publication number
CN105990508A
CN105990508A CN201610157456.8A CN201610157456A CN105990508A CN 105990508 A CN105990508 A CN 105990508A CN 201610157456 A CN201610157456 A CN 201610157456A CN 105990508 A CN105990508 A CN 105990508A
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China
Prior art keywords
light
electrode
substrate
conversion layer
emitting device
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CN201610157456.8A
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Inventor
洪政暐
林育锋
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Genesis Photonics Inc
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Genesis Photonics Inc
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Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Publication of CN105990508A publication Critical patent/CN105990508A/zh
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

本发明提供一种发光装置及应用其的背光模块，包括一基板、至少一电极组以及至少一发光元件。基板具有一长边与一短边。电极组设置在基板上，且包括一第一电极与一第二电极。发光元件具有复数电极，此些电极连接于至少一电极组的第一电极与该第二电极。第一电极与第二电极沿着平行短边的方向排列。通过改变基板上的电极的排列方式，有效加强发光元件位于基板上的强度，避免发光元件自基板上剥离。

Description

发光装置及应用其的背光模块
技术领域
本发明是有关于一种发光装置及应用其的背光模块，且特别是有关于一种具有不同电极方向的发光装置及应用其的背光模块。
背景技术
一般来说，发光元件可以覆晶(flip-chip)技术设置在基板上，以形成一发光装置。典型地，基板为一矩形基板，具有长边与短边，由于长边与短边的尺寸差异较大，容易造成基板弯曲，使位于基板上的发光元件受到破坏。
因此，需要提供一种可有效解决上述问题发生的发光装置。
发明内容
本发明是有关于一种具有不同电极方向的发光装置及应用其的背光模块，通过改变基板上的电极的排列方式，有效加强发光元件位于基板上的强度，避免发光元件自基板上剥离(peeling)。
根据本发明的一方面，提出一种发光装置，包括一基板、至少一电极组以及至少一发光元件。基板具有一长边与一短边。电极组设置在基板上，且包括一第一电极与一第二电极。发光元件具有复数电极，此些电极连接于至少一电极组的第一电极与该第二电极。第一电极与第二电极沿着平行短边的方向排列。
根据本发明的另一方面，提出一种背光模块，包括一导光板、一发光装置以及至少一反射元件。导光板具有一入光面与一出光面，且出光面与入光面相邻。发光装置面对入光面，且发光装置包括一基板、至少一电极组及至少一发光元件。电极组设置在基板上，且包括一第一电极与一第二电极。发光元件具有复数电极，此些电极连接于至少一电极组的第一电极与该第二电极。反射元件用以反射由发光装置发出的光。第一电极与第二电极沿着一垂直出光面的方向排列。
为了对本发明的上述及其他方面有更佳的了解，下文特举实施例，并配合附图，作详细说明如下：
附图说明
图1示出本发明实施例的发光装置的俯视图；
图2A、2B示出本发明一实施例的发光装置沿着图1的A-A’线段所切的剖面图；
图3A、3B示出本发明一实施例的发光装置沿着图1的A-A’线段所切的剖面图；
图4示出本发明实施例的背光模块的示意图。
附图标记说明：
1：背光模块；
2：显示面板；
100：发光装置；
10：基板；
10-1：基板的长边；
10-2：基板的短边；
11：铝基底层；
13：绝缘层；
15：防焊层；
20：发光元件的预设位置；
30：电极组；
301：第一电极；
302：第二电极；
31：含铜金属层；
33：锡膏；
40：发光元件；
41：发光元件的上表面；
401、402：发光元件的电极；
50：波长转换层；
501：高密度转换层；
502：低密度转换层；
61：封胶结构；
62：填充结构；
70：反射结构；
80：导光板；
801：入光面；
802：出光面；
90：反射元件；
A-A’：剖面线；
T1：高密度转换层的厚度；
T2：低密度转换层的厚度；
X、Y、Z：坐标轴。
具体实施方式
以下是参照附图详细叙述本发明的实施态样。需注意的是，实施例所提出的结构和内容仅为举例说明之用，本发明欲保护的范围并非仅限于所述的态样。实施例中相同或类似的标号是用以标示相同或类似的部分。需注意的是，本发明并非显示出所有可能的实施例。可在不脱离本发明的精神和范围内对结构加以变化与修饰，以符合实际应用所需。因此，未于本发明提出的其他实施态样也可能可以应用。再者，图示是已简化以利清楚说明实施例的内容，图示上的尺寸比例并非按照实际产品等比例绘制。因此，说明书和图示内容仅作叙述实施例之用，而非作为限缩本发明保护范围之用。
图1示出本发明实施例的发光装置100的俯视图。图2A、2B示出本发明一实施例的发光装置100沿着图1的A-A’线段所切的剖面图。图2A示出基板10与发光元件40尚未结合的示意图，而图2B示出基板10与发光元件40结合后的示意图。要注意的是，为了更清楚示出位于基板10上的元件的关系，图1省略了部分元件(例如发光元件40)。
如图1、2A、2B所示，本发明实施例的发光装置100包括一基板10、至少一电极组30以及至少一发光元件40。在本实施例中，电极组30设置基板 10上，举例来说可设置在对应在发光元件40的预设位置20内。电极组30可包括一第一电极301与一第二电极302。
要注意的是，虽然图1示出发光装置100包括五个电极组30，但本发明并未限定于此。发光装置100的电极组30的数量，可视设计需求而改变。
发光元件40可例如为一发光二极管(light-emitting diode，LED)，具有复数电极401、402。电极401、402可电性连接于电极组30的第一电极301与第二电极302。如图2A所示，发光元件40的电极401与电极组30的第一电极301之间，以及发光元件40的电极402与电极组30的第二电极302之间可包括锡膏33。
在本实施例中，基板10具有一长边10-1与一短边10-2，电极组30的第一电极301与第二电极302沿着平行短边10-2的方向排列。也就是说，基板10在沿着平行短边10-2的方向上，具有复数(至少两个)电极。
举例来说，基板10可例如为矩形，长边10-1平行于图1的X轴，短边10-2平行于图1的Y轴，也就是说，长边10-1可垂直短边10-2，且电极组30的第一电极301与第二电极302沿着平行于图1的Y方向排列。
在一实施例中，第一电极301与第二电极302也可分别为矩形，也就是说，第一电极301与第二电极302可分别具有一长边与一短边。如图1所示，第一电极301与第二电极302的长边可平行于基板10的长边10-1，而第一电极301与第二电极302的短边可平行于基板10的短边10-2。然而，本发明并未限定于此。第一电极301与第二电极302也可形成为其他形状，例如正方形。
在一实施例中，基板10为一印刷电路板(printed circuit board,PCB)，例如一铝基板，包括一铝基底层11、一绝缘层13、复数含铜金属层31及一防焊层15。绝缘层13设置在铝基底层11上。含铜金属层31设置在绝缘层13上，且对应于电极组30的第一电极301与第二电极302的位置。防焊层15设置在含铜金属层31之间。
然而，本发明并未限定于此。发光装置100的基板10也可由其他材料所形成。举例来说，基板10可为CEM-3或FR-4。
如图2B所示，锡膏33可焊合发光元件40的电极401、402与电极组30的第一电极301、第二电极302，使基板10与发光元件40结合。在本实施例 中，发光装置100可进一步包括一封胶结构61，在基板10与发光元件40结合后，封胶结构61可覆盖发光元件40。在某些实施例中，封胶结构61可包括荧光粒子，使发光元件40发出不同颜色的光。
本发明实施例并未限定发光装置100为图2A、2B所示出的结构。图3A、3B示出本发明另一实施例的发光装置100沿着图1的A-A’线段所切的剖面图。图3A示出基板10与发光元件40尚未结合的示意图，而图3B示出基板10与发光元件40结合后的示意图。
在本实施例中，发光装置100包括一波长转换层50，波长转换层50可设置在发光元件40上。波长转换层50内包含数个荧光粒子。在某些实施例中，如图3A、3B所示，波长转换层50可例如包括一高密度转换层501及一低密度转换层502，其中荧光粒子密度较高的区域定义为高密度转换层501，而荧光粒子密度较低的区域定义为低密度转换层502。在一实施例中，高密度转换层501的荧光粒子密度与低密度转换层502的荧光粒子密度的比值可介于1与1015之间。在本发明其他实施例中，波长转换层50中的低密度转换层502可以是一不含荧光粒子的透明层。在本发明另一实施例中，高密度转换层501与低密度转换层502可以同时形成或分开形成。
在本实施例中，高密度转换层501位于发光元件40与低密度转换层502之间。也就是说，发光元件40所发出的光线会先经过高密度转换层501，再通过低密度转换层502射出。由于高密度转换层501的设计，可让数个发光装置100的出光光色于色度座标上集中地分布，如此可增加此些发光装置100的产品良率。低密度转换层502可增加自发光元件40所发出的光线的混光机率。
在本实施例中，低密度转换层502的厚度T2大于高密度转换层501的厚度T1。举例来说，低密度转换层502的厚度T2与高密度转换层501的厚度T1的比值可介于1至100之间。
在本实施例中，波长转换层50可覆盖整个发光元件40的上表面41，亦即，波长转换层50的俯视面积大于发光元件40的俯视面积。举例来说，波长转换层50的俯视面积与发光元件40的俯视面积的比值可介于1与1.35之间，但本发明并未限定于此。在某些实施例中，波长转换层50的俯视面积与发光元件40的俯视面积的比值可大于1.35。
在一实施例中，波长转换层50例如是由硫化物(Sulfide)、钇铝石榴石(YAG)、LuAG、硅酸盐(Silicate)、氮化物(Nitride)、氮氧化物(Oxynitride)、氟化物(Fluoride)、TAG、KSF、KTF等材料制成。
此外，本实施例的发光装置100可还包括一反射结构70，反射结构70可覆盖发光元件40的侧面以及部分波长转换层50，有效保护发光元件40及波长转换层50，避免其外露而容易毁损。反射结构70例如为白胶，可将自发光元件40的侧面发出的光线反射至波长转换层50，以增加发光装置100的出光效率。
在一实施例中，反射结构70的反射率可大于90％。反射结构70的材料可由聚邻苯二甲酰胺(PPA)、聚酰胺(PA)、聚对苯二甲酸丙二酯(PTT)、聚对苯二甲酸乙二酯(PET)、聚对苯二甲酸1,4-环己烷二甲醇酯(PCT)、环氧胶化合物(EMC)、硅胶化合物(SMC)或其它高反射率树脂/陶瓷材料所组成。
类似地，如图3B所示，锡膏33可焊合发光元件40的电极401、402与电极组30的第一电极301、第二电极302，使基板10与发光元件40结合。在本实施例中，发光装置100可进一步包括一填充结构62，在基板10与发光元件40结合后，填充结构62可填充在基板10与发光元件40之间。
承上述实施例，由于电极组30的第一电极301与第二电极302沿着平行短边10-2的方向排列，可加强发光元件40在基板10上的强度，即便基板10的长边10-1与短边10-2的尺寸差异较大造成基板10弯曲，发光元件40也不容易被破坏。
再者，本发明实施例的发光装置100也可应用于背光模块中，形成一侧向式(edge type)背光模块。图4示出本发明实施例的背光模块1的示意图。如图4所示，背光模块1可包括一导光板80、一发光装置以及至少一反射元件90。背光模块1可设置在显示面板2的一侧。
导光板80具有一入光面801与一出光面802，出光面802与入光面801相邻。发光装置面对导光板80的入光面801。反射元件90用以反射由发光装置发出的光。
发光装置可例如为图1、2B、3B示出的发光装置100，也就是说，发光装置可包括一基板10、至少一电极组30及至少一发光元件40。电极组30设 置在基板10上，且包括一第一电极301与第二电极302。发光元件40具有复数电极，电极连接电极组30的第一电极301与第二电极302。
在一实施例中，反射元件90设置在导光板80的底部。当光线由发光装置的发光元件40由导光板80的入光面801，进入导光板80中，可通过反射元件90将光线反射至导光板80的出光面802。反射元件90可例如为一反射板，但本发明并未限定于此，任何可用于反射由发光装置的发光元件40发出的光线，皆可应用于本发明实施例的背光模块1中。
在本实施例中，电极组30的第一电极301与第二电极302可沿着一垂直出光面802的方向排列。也就是说，背光模块1在沿着垂直出光面802的方向上，具有复数(至少两个)电极。举例来说，第一电极301与第二电极302可沿着平行图4的Y轴的方向排列。
类似地，基板10可例如为矩形，具有一长边与一短边，图4仅示出出基板10的短边(平行Y轴)。电极组30的第一电极301与第二电极302沿着平行于基板10的短边的方向排列。
在一实施例中，第一电极301与第二电极302也可分别为矩形，也就是说，第一电极301与第二电极302可分别具有一长边与一短边。第一电极301与第二电极302的长边可平行于基板10的长边，而第一电极301与第二电极302的短边可平行于基板10的短边。
由于电极组30的第一电极301与第二电极302沿着沿着垂直出光面802的方向排列，可加强发光元件40在基板10上的强度，使发光元件40不易自基板10上剥离。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (13)

1.一种发光装置，其特征在于，包括：
一基板，具有一长边与一短边；
至少一电极组，设置在该基板上，该至少一电极组包括一第一电极与一第二电极；以及
至少一发光元件，具有复数电极，该些电极电性连接于该至少一电极组的该第一电极与该第二电极；
其中该第一电极与该第二电极沿着平行该短边的方向排列。
2.根据权利要求1所述的发光装置，其特征在于，该些复数电极具有一长边与一短边，该些电极的长边平行于该基板的长边，该些电极的短边平行于该基板的短边。
3.根据权利要求1所述的发光装置，其特征在于，还包括：
一封胶结构，覆盖该至少一发光元件；
其中该封胶结构包括荧光粒子。
4.根据权利要求1所述的发光装置，其特征在于，还包括：
一波长转换层，设置在该至少一发光元件上；及
一反射结构，覆盖该发光元件的侧面以及部分该波长转换层。
5.根据权利要求4所述的发光装置，其特征在于，该波长转换层包括复数个荧光粒子，该些荧光粒子密度较高的区域定义为一高密度转换层，该些荧光粒子密度较低的区域定义为一低密度转换层，该高密度转换层位于该至少一发光元件与该低密度转换层之间。
6.根据权利要求1所述的发光装置，其特征在于，还包括：
一填充结构，填充在该基板与该至少一发光元件之间。
7.一种背光模块，其特征在于，包括：
一导光板，具有一入光面与一出光面，该出光面与该入光面相邻；
一发光装置，面对该入光面，且该发光装置包括：
一基板；
至少一电极组，设置在该基板上，该至少一电极组包括一第一电极与第二电极；及
至少一发光元件，具有复数电极，该些电极连接该至少一电极组的该第 一电极与该第二电极；以及
至少一反射元件，用以反射由该发光装置发出的光；
其中该第一电极与该第二电极沿着一垂直该出光面的方向排列。
8.根据权利要求7所述的背光模块，其特征在于，该基板具有一长边与一短边，且该第一电极与该第二电极沿着平行该短边的方向排列。
9.根据权利要求8所述的背光模块，其特征在于，该些复数电极具有一长边与一短边，该些电极的长边平行于该基板的长边，该些电极的短边平行于该基板的短边。
10.根据权利要求7所述的背光模块，其特征在于，该发光装置还包括：
一封胶结构，覆盖该至少一发光元件；
其中该封胶结构包括荧光粒子。
11.根据权利要求7所述的背光模块，其特征在于，该发光装置还包括：
一波长转换层，设置在该至少一发光元件上；及
一反射结构，覆盖该发光元件的侧面以及部分该波长转换层。
12.根据权利要求11所述的背光模块，其特征在于，该波长转换层包括复数个荧光粒子，该些荧光粒子密度较高的区域定义为一高密度转换层，该些荧光粒子密度较低的区域定义为一低密度转换层，该高密度转换层位于该至少一发光元件与该低密度转换层之间。
13.根据权利要求7所述的背光模块，其特征在于，该发光装置还包括：
一填充结构，填充在该基板与该至少一发光元件之间。
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