US20160276320A1 - Semiconductor light-emitting device and the manufacturing method thereof - Google Patents

Semiconductor light-emitting device and the manufacturing method thereof Download PDF

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Publication number
US20160276320A1
US20160276320A1 US15/073,673 US201615073673A US2016276320A1 US 20160276320 A1 US20160276320 A1 US 20160276320A1 US 201615073673 A US201615073673 A US 201615073673A US 2016276320 A1 US2016276320 A1 US 2016276320A1
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Prior art keywords
light
emitting unit
emitting
reflective layer
substrate
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Abandoned
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US15/073,673
Inventor
Chin-Hua Hung
Yu-Feng Lin
Cheng-Wei HUNG
Hao-Chung Lee
Xun-Xain Zhan
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Genesis Photonics Inc
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Genesis Photonics Inc
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Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to US15/073,673 priority Critical patent/US20160276320A1/en
Assigned to GENESIS PHOTONICS INC. reassignment GENESIS PHOTONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUNG, CHENG-WEI, HUNG, CHIN-HUA, LEE, HAO-CHUNG, LIN, YU-FENG, ZHAN, XUN-XAIN
Publication of US20160276320A1 publication Critical patent/US20160276320A1/en
Priority to US15/973,552 priority patent/US20180261572A1/en
Abandoned legal-status Critical Current

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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the invention relates to a light-emitting device and a manufacturing method thereof.
  • the invention relates to a semiconductor light-emitting device and a manufacturing method thereof.
  • LED light-emitting diode
  • OLED organic LED
  • polymer LED polymer LED
  • the conventional LED light source not only emits light from the LED but also generates excited light through exciting phosphor by applying the light emitted from the LED; further, the light emitted from the LED and the excited light can be mixed to generate the light with the proper color.
  • the phosphor is uniformly sprayed onto the LED or not also poses an impact on the overall light-emitting quality of the light source.
  • the phosphor sprayed onto the side surface of the LED is very much likely to have uneven thickness or to be distributed non-uniformly. For instance, if the amount of yellow phosphor distributed onto the side surface of a blue LED is insufficient, or if the blue LED is even exposed due to the insufficient amount of the yellow phosphor, the blue beam is emitted from the side surface (i.e., at a large angle) of the blue LED light source. By contrast, if the amount of the yellow phosphor distributed onto the side surface of the blue LED is excessive, the yellow beam is emitted from the side surface (i.e., at a large angle) of the blue LED light source. Both of said conditions deteriorate the light-emitting quality of the overall light source, reduce the yield of the light source, and raise the overall manufacturing costs.
  • the invention is directed to a semiconductor light-emitting device that is characterized by exceptional light-emitting quality.
  • the invention is directed to a manufacturing method of a semiconductor light-emitting device, and the manufacturing method can be applied to form the semiconductor light-emitting device characterized by exceptional light-emitting quality.
  • a semiconductor light-emitting device includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate.
  • the reflective layer surrounds the at least one light-emitting unit.
  • the reflective layer covers a side surface of the at least one light-emitting unit.
  • an upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
  • the phosphor layer encapsulates the at least one light-emitting unit onto the substrate, and the reflective layer covers the side surface of the phosphor layer configured to encapsulate the at least one light-emitting unit.
  • an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
  • the semiconductor light-emitting device further includes a molding compound.
  • the molding compound encapsulates the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate.
  • the semiconductor light-emitting device further includes a blocking wall.
  • the blocking wall is arranged on the substrate and surrounds a light-emitting region, and the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
  • an upper surface of the reflective layer is substantially lower than the upper surface of the at least one light-emitting unit and an upper surface of the blocking wall.
  • the at least one light-emitting unit comprises a plurality of light-emitting chips, and the light-emitting chips are connected together.
  • the reflective layer is further arranged between the light-emitting units.
  • a manufacturing method of a semiconductor light-emitting device includes: providing a substrate; placing at least one light-emitting unit on the substrate; encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer.
  • the phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.
  • the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further includes: placing the reflective layer on the substrate, wherein the reflective layer covers side surface of the at least one light-emitting unit; placing the phosphor layer on the upper surface of the at least one light-emitting unit or on the upper surface of the at least one light-emitting unit and an upper surface of the reflective layer after the reflective layer covers the side surface of the at least one light-emitting unit.
  • an upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
  • the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further includes: encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and placing the reflective layer on a side surface of the phosphor layer of the at least one light-emitting unit.
  • an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
  • the manufacturing method further includes: encapsulating the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate by a molding compound.
  • the manufacturing method before encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer, the manufacturing method further includes: placing a blocking wall on the substrate, wherein the blocking wall surrounds a light-emitting region, and the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
  • the blocking wall is adapted to restricting the reflective layer to be located in the light-emitting region.
  • the step of placing the at least one light-emitting unit on the substrate further includes: placing a plurality of ht-emitting chips on the substrate, wherein the light-emitting chips are connected together and constitute the at least one light-emitting unit.
  • the reflective layer is further arranged between the light-emitting units.
  • the reflective layer of the semiconductor light-emitting device provided in an embodiment of the invention can block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality.
  • the manufacturing method of the semiconductor light-emitting device provided herein when the light-emitting unit is encapsulated by the phosphor layer and the reflective layer, the side surface of the light-emitting unit is covered, and the semiconductor light-emitting device capable of emitting light with favorable quality can be formed.
  • FIG. 1A is a schematic top view illustrating a semiconductor light-emitting device according to a first embodiment of the invention.
  • FIG. 1B is a cross-sectional view taken along line I 1 I 1 depicted in FIG. 1A .
  • FIG. 2A to FIG. 2D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a second embodiment of the invention.
  • FIG. 3A to FIG. 3D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a third embodiment of the invention.
  • FIG. 4 is a schematic top view illustrating a semiconductor light-emitting device according to a fourth embodiment of the invention.
  • FIG. 5A to FIG. 5D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fourth embodiment of the invention.
  • FIG. 6A to FIG. 6D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fifth embodiment of the invention.
  • FIG. 6E is a cross-sectional view illustrating a semiconductor light-emitting device according to another embodiment of the invention.
  • FIG. 7A is a schematic top view illustrating a semiconductor light-emitting device according to a sixth embodiment of the invention.
  • FIG. 7B is a cross-sectional view taken along line I 3 I 3 depicted in FIG. 7A .
  • FIG. 1A is a schematic top view illustrating a semiconductor light-emitting device according to a first embodiment of the invention.
  • FIG. 1B is a cross-sectional view taken along line I 1 I 1 depicted in FIG. 1A .
  • a semiconductor light-emitting device 100 provided in the first embodiment of the invention includes a substrate 110 , a light-emitting unit 120 arranged on the substrate 110 , a phosphor layer 130 , and a reflective layer 140 .
  • the phosphor layer 130 at least covers an upper surface 121 of the light-emitting unit 120
  • the reflective layer 140 arranged on the substrate 110 surrounds the light-emitting unit 120 .
  • the phosphor layer 130 adjoins the upper surface 121 of the light-emitting unit 120
  • the reflective layer 140 adjoins a side surface 123 of the light-emitting unit 120 .
  • the light-emitting unit 120 is encapsulated onto a surface 111 of the substrate 110 by the phosphor layer 130 and the reflective layer 140 . Since the phosphor layer 130 covers the upper surface 121 of the light-emitting unit, the thickness of the phosphor layer 130 is proper, such that the light emitted from the upper surface 121 of the light-emitting unit 120 can be converted to have appropriate color by means of the phosphor layer 130 .
  • the reflective layer 140 is capable of covering or reflecting the light emitted from the side surface 123 of the light-emitting unit 120 and simultaneously reflect the light reflected by the phosphor layer 130 or by other optical devices on the upper surfaces 121 of the light-emitting units 120 .
  • the light emitted by the semiconductor light-emitting device 100 is mainly the light with proper color and mainly come from the upper surface 121 of the light-emitting unit 120 .
  • the overall light-emitting quality of the semiconductor light-emitting device 100 is further improved.
  • the semiconductor light-emitting device 100 is exemplified to elaborate the semiconductor light-emitting device provided in the embodiments of the invention, which should however not be construed as a limitation to the invention.
  • Other exemplary semiconductor light-emitting devices and the manufacturing method thereof are provided in some other embodiments below to elaborate the semiconductor light-emitting device discussed in the disclosure.
  • FIG. 2A to FIG. 2D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a second embodiment of the invention.
  • a substrate 110 A is provided, and a light-emitting unit 120 A is placed on the substrate 110 A.
  • the substrate 110 A provided in the present embodiment is a ceramic substrate whose surface 111 A has a circuit layer, and thus the substrate 110 A is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120 A.
  • the light-emitting unit 120 A provided herein is a flip-chip LED, for instance; hence, the light-emitting unit 120 can be directly electrically connected to the surface 111 A of the substrate 110 A.
  • the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120 A is placed on the substrate 110 A, the light-emitting unit 120 A is encapsulated onto the substrate 110 A by a phosphor layer 130 A and a reflective layer 140 A. That is, the phosphor layer 130 A and the reflective layer 140 A provided in the present embodiment basically cover the surface of the light-emitting unit 120 A exposed by the substrate 110 A.
  • the reflective layer 140 A is placed on the surface 111 A of the substrate 110 A, and the reflective layer 140 A surrounds the light-emitting unit 120 A and further covers a side surface 123 A of the light-emitting unit 120 A.
  • the reflective layer 140 A provided in the present embodiment surrounds the light-emitting unit 120 A along the side surface 123 A of the light-emitting unit 120 A, and an upper surface 141 A of the reflective layer 140 A and an upper surface 121 A of the light-emitting unit 120 A are substantially co-planar.
  • the phosphor layer 130 A can be well placed on the upper surface 141 A of the reflective layer 140 A and an upper surface 121 A of the light-emitting unit 120 A, and the light-emitting unit 120 A can then be encapsulated onto the substrate 110 A.
  • the reflective layer 140 A is placed on the substrate 110 A, and the phosphor layer 130 A is then placed on the reflective layer 140 A. Since the upper surface 141 A of the reflective layer 140 A and the upper surface 121 A of the light-emitting unit 120 A are substantially co-planar, the phosphor layer 130 A can well cover said two upper surfaces 141 A and 121 A.
  • the material of the reflective layer 140 A includes silicon and titanium dioxide (TiO 2 ), for instance, and the viscosity of the reflective layer 140 A is within a range from 1000 mPa ⁇ s to 20000 mPa ⁇ s, for instance.
  • the reflectivity of the reflective layer 140 A falls within a range from 90% to 99%.
  • the phosphor layer is made of phosphor and adhesives.
  • the material, the viscosity, and the reflectivity of the reflective layer 140 A are not limited in the invention, and neither is the material of the phosphor.
  • the reflective layer can be made of other materials with proper viscosity and reflectivity, and the phosphor layer can be made of the mixture of proper substance and phosphor capable of achieving the effects of fluorescent light.
  • the reflective layer 140 A provided herein is made of white glue and thus can be easily formed on the substrate 110 A as well as surround the light-emitting unit 120 A.
  • the light-emitting unit 120 A is encapsulated onto the substrate 110 A by the phosphor layer 130 A and the reflective layer 140 A
  • the light-emitting unit 120 A, the phosphor layer 130 A, and the reflective layer 140 A are further encapsulated onto the substrate 110 A by a molding compound 150 A.
  • the molding compound 150 A is made of a transparent material or a light transmissive material and is suitable for covering the light-emitting unit 120 A, the phosphor layer 130 A, and the reflective layer 140 A on the substrate 110 A.
  • the molding compound 150 A can be shaped as a lens, such that the light emitted from the light-emitting unit 120 A can be refracted by the molding compound 150 A and can thus provide illumination at a proper light-emitting angle.
  • the light-emitting unit 120 A is encapsulated onto the substrate 110 A by the reflective layer 140 A and the phosphor layer 130 A, and the reflective layer 140 A arranged on the substrate 110 A surrounds the light-emitting unit 120 A.
  • the reflective layer 140 A can block the light emitted from the side surface of the light-emitting unit 120 A, and the light emitted from the upper surface 121 A of the light-emitting unit 120 A can be converted to have proper color by means of the phosphor layer 130 A that has the appropriate thickness and uniformly covers the upper surface of the light-emitting unit 120 A.
  • the manufacturing method of the semiconductor light-emitting device discussed herein the semiconductor light-emitting device 100 A characterized by exceptional light-emitting quality can be formed.
  • the manufacturing method of the semiconductor light-emitting device provided in the disclosure is not limited to that described in the second embodiment.
  • FIG. 3A to FIG. 3D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a third embodiment of the invention.
  • the manufacturing method of the semiconductor light-emitting device provided in the third embodiment is similar to that described in the second embodiment above, i.e., a substrate 110 B is provided, and a light-emitting unit 120 B is placed on the substrate 110 B.
  • the substrate 110 B is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120 B.
  • the phosphor layer 130 B is placed on the substrate 110 B and the light-emitting unit 120 B, and the light-emitting unit 120 B is encapsulated onto the substrate 110 B by the phosphor layer 130 B.
  • the phosphor layer 130 B covers the upper surface 121 B and the side surface 123 B of the light-emitting unit 120 B.
  • the reflective layer 140 B surrounding the light-emitting unit 120 B is placed on the side surface 131 B of the phosphor layer 130 B.
  • the phosphor layer 130 B is configured to encapsulate the light-emitting unit 120 B.
  • the light emitted from the side surface 123 B of the light-emitting unit 120 B is reflected by the reflective layer 140 B, and thus only the light from the upper surface 121 B of the light-emitting unit 120 B can be emitted.
  • the phosphor layer 130 B formed on the upper surface 121 B of the light-emitting unit 120 B has the proper thickness; hence, the light-emitting unit 120 B is capable of emitting the light with proper color through the phosphor layer 130 B, and the light beams with significantly different colors can be blocked by the reflective layer 140 B.
  • the upper surface 141 B of the reflective layer 140 B provided in the present embodiment is substantially higher than the upper surface 121 B of the light-emitting unit 120 B and thus can achieve favorable optical blocking effects.
  • the material of the reflective layer 140 B includes silicon and titanium dioxide (TiO 2 ), for instance, and the viscosity of the reflective layer 140 B is within a range from 1000 mPa ⁇ s to 20000 mPa ⁇ s, for instance.
  • the reflectivity of the reflective layer 140 B falls within a range from 90% to 99%.
  • the phosphor layer is made of phosphor or adhesives.
  • the material, the viscosity, and the reflectivity of the reflective layer 140 B are not limited in the invention, and neither is the material of the phosphor.
  • the reflective layer can be made of other materials with proper viscosity and reflectivity, and the phosphor layer can be made of the mixture of proper substance and phosphor capable of achieving the effects of fluorescent light.
  • the light-emitting unit 120 B is encapsulated onto the substrate 110 B by the phosphor layer 130 B and the reflective layer 140 B
  • the light-emitting unit 120 B, the phosphor layer 130 B, and the reflective layer 140 B are further encapsulated onto the substrate 110 B by a molding compound 150 B.
  • the molding compound 150 B is made of a transparent material or a light transmissive material and is suitable for covering the light-emitting unit 120 B, the phosphor layer 130 B, and the reflective layer 140 B on the substrate 110 B.
  • the molding compound 150 B can be shaped as a lens, such that the light emitted from the light-emitting unit 120 B can be refracted by the molding compound 150 B and can thus provide illumination at a proper light-emitting angle.
  • the light-emitting unit 120 B is encapsulated onto the substrate 110 B by the reflective layer 140 B and the phosphor layer 130 B, and the reflective layer 140 B arranged on the substrate 110 B surrounds the light-emitting unit 120 B covered by the phosphor layer 130 B.
  • the reflective layer 140 B can block the light emitted from the side surface of the light-emitting unit 120 B, and the light emitted from the upper surface 121 B of the light-emitting unit 120 B can be converted to have proper color by means of the phosphor layer 130 B that has the appropriate thickness and uniformly covers the upper surface 121 B of the light-emitting unit 120 B.
  • the semiconductor light-emitting device 100 B characterized by exceptional light-emitting quality can be formed.
  • FIG. 4 is a schematic top view illustrating a semiconductor light-emitting device according to a fourth embodiment of the invention.
  • the light-emitting unit is individually processed; by contrast, with reference to FIG. 4 , the light-emitting unit 120 C of the semiconductor light-emitting device 100 C provided in the fourth embodiment of the invention comprises plural light-emitting chips 122 C connected together.
  • the light-emitting chips 122 C are arranged to form the light-emitting device 120 C with proper size and shape.
  • the semiconductor light-emitting device 100 C further includes a blocking wall 160 C that surrounds a light-emitting region A, and the light-emitting unit 120 C, the phosphor layer 130 C, and the reflective layer 140 C are arranged in the light-emitting region A.
  • the manufacturing method of the semiconductor light-emitting device 100 C provided in the fourth embodiment of the invention and the semiconductor light-emitting device 100 C are elaborated with reference to cross-sectional views.
  • FIG. 5A to FIG. 5D that are cross-sectional views illustrating steps in a manufacturing method of the semiconductor light-emitting device 100 C according to the fourth embodiment of the invention are provided.
  • the cross-sectional views in FIG. 5A to FIG. 5D correspond to the section line I 2 I 2 in FIG. 4 , for instance.
  • a substrate 110 C is provided, and a light-emitting unit 120 C is placed on the substrate 110 C.
  • the substrate 110 C is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120 C.
  • a blocking wall 160 C is placed on the substrate 110 C and surrounds the light-emitting region A. That is, the blocking wall 160 C is fixed onto the upper surface 111 C of the substrate 110 C and surrounds the light-emitting region A where the light-emitting unit 120 C is located.
  • the material of the blocking wall 160 C includes silicon and TiO 2 (or silicon dioxide, SiO 2 ) and is pre-solidified on the substrate 110 C to surround the light-emitting region A.
  • the light-emitting region A is filled with the reflective layer 140 C.
  • the blocking wall 160 C is suitable for limiting the reflective layer 140 C to be located in the light-emitting region A, and the reflective layer 140 C exposes the upper surface 122 C of the light-emitting unit 120 C and further blocks the light emitted from the side surface 123 C of the light-emitting unit 120 C.
  • the material of the reflective layer 140 A includes silicon and TiO 2 , for instance, and the viscosity of the reflective layer 140 C is within a range from 1000 mPa ⁇ s to 20000 mPa ⁇ s, for instance.
  • the reflectivity of the reflective layer 140 C falls within a range from 90% to 99%.
  • the material, the viscosity, and the reflectivity of the reflective layer 140 C are not limited in the invention, and neither is the material of the phosphor. In other embodiments of the invention, the reflective layer may be made of other materials with proper viscosity and reflectivity.
  • the phosphor layer 130 C is placed on the upper surface 121 C of the light-emitting unit 120 C.
  • the light-emitting unit 120 C, the phosphor layer 130 C, and the reflective layer 140 C are all arranged in the light-emitting region A surrounded by the blocking wall 160 C, so as to form the semiconductor light-emitting device 100 C.
  • FIG. 6A to FIG. 6D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fifth embodiment of the invention. Similar to the previous embodiment, in the present embodiment as shown in FIG. 6A , a substrate 110 D is provided, and a light-emitting unit 120 D is placed on the substrate 110 D. The substrate 110 D is suitable for providing carrying, electrical connection, and heat dissipation function to the light-emitting unit 120 D.
  • the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120 D is formed on the substrate 110 D, a phosphor layer 130 D is placed on the substrate 110 D and the light-emitting unit 120 D, and the light-emitting unit 120 D is further encapsulated onto the substrate 110 D by the phosphor layer 130 D.
  • the phosphor layer 130 D covers the upper surface 121 D and the side surface 123 D of the light-emitting unit 120 D.
  • a blocking wall 160 D is placed on the substrate 110 D and surrounds the light-emitting region B. Namely, the blocking wall 160 D is fixed onto the substrate 110 D and surrounds the light-emitting unit 120 D covered by the phosphor layer 130 D.
  • the material of the blocking wall 160 C includes silicon and TiO 2 (or SiO 2 ) and is pre-solidified on the substrate 110 D to surround the light-emitting region B.
  • the light-emitting region B is filled with the reflective layer 140 D.
  • the blocking wall 160 D is suitable for limiting the reflective layer 140 D to be located in the light-emitting region B, and the reflective layer 140 D exposes a portion of the phosphor layer 130 D adjoining the upper surface 122 D of the light-emitting unit 120 D and further blocks the light emitted from the side surface of the light-emitting unit 120 D.
  • the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120 D, the phosphor layer 130 D, and the blocking wall 160 D are placed on the substrate 110 D, the light-emitting region B surrounded by the blocking wall 160 D is filled with the reflective layer 140 D, so as to form the light-emitting device 100 D.
  • the light-emitting unit 120 D is encapsulated onto the substrate 110 D by the reflective layer 140 D and the phosphor layer 130 D, and the blocking wall 160 D can prevent the reflective layer 140 D from overflowing to the outside of the light-emitting region B or the outside of the substrate 110 D.
  • the production yield of the semiconductor light-emitting device 100 D can be improved.
  • the reflective layer 140 D on the substrate 110 D surrounds the light-emitting unit 120 D covered by the phosphor layer 130 D.
  • the reflective layer 140 D is capable of blocking the light emitted from the side surface of the light-emitting unit 120 D, and the light emitted from the upper surface 121 D of the light-emitting unit 120 D can be converted to a proper color by means of the phosphor layer 130 D that has the appropriate thickness and uniformly covers the upper surface 121 D of the light-emitting unit 120 D.
  • the semiconductor light-emitting device 100 D characterized by exceptional light-emitting quality can be formed.
  • FIG. 6E is a cross-sectional view illustrating a semiconductor light-emitting device according to another embodiment of the invention.
  • the manufacturing method of the semiconductor light-emitting device 200 D includes steps of placing a light-emitting chip 222 D of a light-emitting unit 220 D on a substrate 210 D and covering an upper surface 221 D of the light-emitting unit 220 D by a phosphor layer 230 D.
  • a blocking wall 260 D is located on the substrate 210 D and surrounds the light-emitting region B, the light-emitting unit 220 D equipped with the phosphor layer 230 D is located in the light-emitting region B, and the reflective layer 240 D can fill the light-emitting region B and surrounds the light-emitting unit 220 D. That is, in the present embodiment, the phosphor layer 230 D covers a portion of the surface of the light-emitting unit 220 D, and the blocking wall 260 D and the reflective layer 240 D are formed. The large height of the reflective layer 240 allows the reflective layer 240 D to better cover the side surface of the light-emitting unit 220 D, and accordingly the light emitted by the semiconductor light-emitting device 200 D can be reflected in an upward direction.
  • the light-emitting chips 122 C and 122 D are closely arranged, which should however not be construed as a limitation to the invention.
  • the distance between the light-emitting chips may be 50 micrometers ( ⁇ m) constantly.
  • FIG. 7A is a schematic top view illustrating a semiconductor light-emitting device according to a sixth embodiment of the invention.
  • the semiconductor light-emitting device 100 E provided in the sixth embodiment of the invention includes a plurality of light-emitting units 120 E, a blocking wall 160 E, and a reflective layer 140 E on the substrate 110 E.
  • the light-emitting units 120 E are located on the light-emitting region C on the substrate 110 E, and the blocking wall 160 E surrounds the light-emitting region C.
  • the blocking wall 160 E can restrict the reflective layer 140 E to be located in the light-emitting region C, and the reflective layer 140 E is arranged among the light-emitting units 120 E, so as to provide a large reflective surface and improve the overall light-emitting efficiency of the semiconductor light-emitting device 100 E.
  • FIG. 7B is a cross-sectional view taken along a line I 3 I 3 depicted in FIG. 7A .
  • a metal layer 170 E is placed on the substrate 110 E, and the light-emitting units 120 E are arranged on a metal surface 171 E of the metal layer 170 E.
  • the substrate 110 E provided herein is made of a ceramic material or a metal material, so as to dissipate the heat from the light-emitting units 120 E to a great extent.
  • the light-emitting units 120 E and the metal layer 170 E are located on the light-emitting region C on the substrate 110 E, and the blocking wall 160 E surrounds the light-emitting region C after the light-emitting units 120 E are arranged on the metal surface 171 E.
  • the material of the blocking wall 160 E includes silicon and TiO 2 (or SiO 2 ) and is pre-solidified on the substrate 110 E to surround the light-emitting region C.
  • the reflective layer 140 E is located in the light-emitting region C, and the blocking wall 160 E is suitable of limiting the reflective layer 140 E to be located in the light-emitting region C.
  • the space among the light-emitting units 120 E is filled with the reflective layer 140 E, i.e., the reflective layer 140 E in the light-emitting region C is located in an area exposed by the light-emitting units 120 E and covers the side surfaces of the light-emitting units 120 E.
  • an upper surface 141 E of the reflective layer 140 E is substantially lower than upper surfaces 121 E of the light-emitting units 120 E and an upper surface 161 E of the blocking wall 160 E. That is, the upper surface 141 E of the reflective layer 140 E is co-planar with or lower than the upper surfaces of the light-emitting units 120 E, and thus the flowable material constituting the reflective layer 140 E can be easily formed in the light-emitting region C.
  • the phosphor layer 130 E covers the reflective layer 140 E and the light-emitting units 120 E, and the light-emitting units 120 E are encapsulated onto the substrate 110 E.
  • the reflective layer 140 E can block the light emitted from the side surfaces of the light-emitting units 120 E, and the upper surface 141 E of the reflective layer 140 E can provide a large reflective surface, such that the light from the upper surfaces 120 E of the light-emitting units 120 E can be emitted in an efficient manner.
  • the phosphor layer 130 E can be well formed on the reflective layer 140 E and the light-emitting units 120 E. As a result, the semiconductor light-emitting device 100 provided herein is characterized by exceptional light-emitting quality.
  • the reflective layer of the semiconductor light-emitting device provided in an embodiment of the invention surrounds the light-emitting unit and exposes the phosphor layer on the upper surface of the light-emitting unit. While the reflective layer reflects the light emitted from the upper surface of the light-emitting unit, the reflective layer can simultaneously block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality.
  • the reflective layer surrounds the light-emitting unit and exposes the phosphor layer adjoining the upper surface of the light-emitting unit.
  • the reflective layer can simultaneously block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality.

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Abstract

A semiconductor light-emitting device that includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate is provided. The reflective layer surrounds the at least one light-emitting unit. A manufacturing method of a semiconductor light-emitting device is also provided.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims the priority benefits of U.S. provisional application Ser. No. 62/134,577, filed on Mar. 18, 2015. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
    • FIELD OF INVENTION
  • The invention relates to a light-emitting device and a manufacturing method thereof. In particular, the invention relates to a semiconductor light-emitting device and a manufacturing method thereof.
    • DESCRIPTION OF RELATED ART
  • Among conventional light source products, solid lighting devices formed by semiconductors (e.g., light-emitting diode (LED), organic LED (OLED), and polymer LED) have been widely applied in daily lives of human beings. The LED characterized by low power consumption, long service life, and small volume has been replacing the conventional light source.
  • In order to provide light with proper color, the conventional LED light source not only emits light from the LED but also generates excited light through exciting phosphor by applying the light emitted from the LED; further, the light emitted from the LED and the excited light can be mixed to generate the light with the proper color. However, whether the phosphor is uniformly sprayed onto the LED or not also poses an impact on the overall light-emitting quality of the light source.
  • The phosphor sprayed onto the side surface of the LED is very much likely to have uneven thickness or to be distributed non-uniformly. For instance, if the amount of yellow phosphor distributed onto the side surface of a blue LED is insufficient, or if the blue LED is even exposed due to the insufficient amount of the yellow phosphor, the blue beam is emitted from the side surface (i.e., at a large angle) of the blue LED light source. By contrast, if the amount of the yellow phosphor distributed onto the side surface of the blue LED is excessive, the yellow beam is emitted from the side surface (i.e., at a large angle) of the blue LED light source. Both of said conditions deteriorate the light-emitting quality of the overall light source, reduce the yield of the light source, and raise the overall manufacturing costs.
    • SUMMARY OF THE INVENTION
  • The invention is directed to a semiconductor light-emitting device that is characterized by exceptional light-emitting quality.
  • The invention is directed to a manufacturing method of a semiconductor light-emitting device, and the manufacturing method can be applied to form the semiconductor light-emitting device characterized by exceptional light-emitting quality.
  • In an embodiment of the invention, a semiconductor light-emitting device includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate. The reflective layer surrounds the at least one light-emitting unit.
  • According to an embodiment of the invention, the reflective layer covers a side surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, an upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, the phosphor layer encapsulates the at least one light-emitting unit onto the substrate, and the reflective layer covers the side surface of the phosphor layer configured to encapsulate the at least one light-emitting unit.
  • According to an embodiment of the invention, an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, the semiconductor light-emitting device further includes a molding compound. The molding compound encapsulates the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate.
  • According to an embodiment of the invention, the semiconductor light-emitting device further includes a blocking wall. The blocking wall is arranged on the substrate and surrounds a light-emitting region, and the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
  • According to an embodiment of the invention, an upper surface of the reflective layer is substantially lower than the upper surface of the at least one light-emitting unit and an upper surface of the blocking wall.
  • According to an embodiment of the invention, the at least one light-emitting unit comprises a plurality of light-emitting chips, and the light-emitting chips are connected together.
  • According to an embodiment of the invention, if the quantity of the at least one light-emitting units is plural, the reflective layer is further arranged between the light-emitting units.
  • In an embodiment of the invention, a manufacturing method of a semiconductor light-emitting device includes: providing a substrate; placing at least one light-emitting unit on the substrate; encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer. The phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.
  • According to an embodiment of the invention, the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further includes: placing the reflective layer on the substrate, wherein the reflective layer covers side surface of the at least one light-emitting unit; placing the phosphor layer on the upper surface of the at least one light-emitting unit or on the upper surface of the at least one light-emitting unit and an upper surface of the reflective layer after the reflective layer covers the side surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, an upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further includes: encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and placing the reflective layer on a side surface of the phosphor layer of the at least one light-emitting unit.
  • According to an embodiment of the invention, an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
  • According to an embodiment of the invention, after encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer, the manufacturing method further includes: encapsulating the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate by a molding compound.
  • According to an embodiment of the invention, before encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer, the manufacturing method further includes: placing a blocking wall on the substrate, wherein the blocking wall surrounds a light-emitting region, and the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
  • According to an embodiment of the invention, when the at least one light-emitting unit is encapsulated onto the substrate by the phosphor layer and the reflective layer, the blocking wall is adapted to restricting the reflective layer to be located in the light-emitting region.
  • According to an embodiment of the invention, the step of placing the at least one light-emitting unit on the substrate further includes: placing a plurality of ht-emitting chips on the substrate, wherein the light-emitting chips are connected together and constitute the at least one light-emitting unit.
  • According to an embodiment of the invention, if the quantity of the at least one light-emitting units is plural, the reflective layer is further arranged between the light-emitting units.
  • Based on the above, the reflective layer of the semiconductor light-emitting device provided in an embodiment of the invention can block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality. Besides, according to the manufacturing method of the semiconductor light-emitting device provided herein, when the light-emitting unit is encapsulated by the phosphor layer and the reflective layer, the side surface of the light-emitting unit is covered, and the semiconductor light-emitting device capable of emitting light with favorable quality can be formed.
  • Several exemplary embodiments accompanied with figures are described in detail below to further describe the disclosure in details.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the disclosure.
  • FIG. 1A is a schematic top view illustrating a semiconductor light-emitting device according to a first embodiment of the invention.
  • FIG. 1B is a cross-sectional view taken along line I1I1 depicted in FIG. 1A.
  • FIG. 2A to FIG. 2D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a second embodiment of the invention.
  • FIG. 3A to FIG. 3D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a third embodiment of the invention.
  • FIG. 4 is a schematic top view illustrating a semiconductor light-emitting device according to a fourth embodiment of the invention.
  • FIG. 5A to FIG. 5D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fourth embodiment of the invention.
  • FIG. 6A to FIG. 6D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fifth embodiment of the invention.
  • FIG. 6E is a cross-sectional view illustrating a semiconductor light-emitting device according to another embodiment of the invention.
  • FIG. 7A is a schematic top view illustrating a semiconductor light-emitting device according to a sixth embodiment of the invention.
  • FIG. 7B is a cross-sectional view taken along line I3I3 depicted in FIG. 7A.
    •  DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS
  • FIG. 1A is a schematic top view illustrating a semiconductor light-emitting device according to a first embodiment of the invention. FIG. 1B is a cross-sectional view taken along line I1I1 depicted in FIG. 1A. With reference to FIG. 1A and FIG. 1B, a semiconductor light-emitting device 100 provided in the first embodiment of the invention includes a substrate 110, a light-emitting unit 120 arranged on the substrate 110, a phosphor layer 130, and a reflective layer 140. The phosphor layer 130 at least covers an upper surface 121 of the light-emitting unit 120, and the reflective layer 140 arranged on the substrate 110 surrounds the light-emitting unit 120. That is, in the semiconductor light-emitting device 100 provided in the present embodiment, the phosphor layer 130 adjoins the upper surface 121 of the light-emitting unit 120, and the reflective layer 140 adjoins a side surface 123 of the light-emitting unit 120.
  • In the semiconductor light-emitting device 100 provided in the first embodiment, the light-emitting unit 120 is encapsulated onto a surface 111 of the substrate 110 by the phosphor layer 130 and the reflective layer 140. Since the phosphor layer 130 covers the upper surface 121 of the light-emitting unit, the thickness of the phosphor layer 130 is proper, such that the light emitted from the upper surface 121 of the light-emitting unit 120 can be converted to have appropriate color by means of the phosphor layer 130. On the other hand, the reflective layer 140 is capable of covering or reflecting the light emitted from the side surface 123 of the light-emitting unit 120 and simultaneously reflect the light reflected by the phosphor layer 130 or by other optical devices on the upper surfaces 121 of the light-emitting units 120. Hence, the light emitted by the semiconductor light-emitting device 100 is mainly the light with proper color and mainly come from the upper surface 121 of the light-emitting unit 120. Thereby, the overall light-emitting quality of the semiconductor light-emitting device 100 is further improved.
  • In the first embodiment, the semiconductor light-emitting device 100 is exemplified to elaborate the semiconductor light-emitting device provided in the embodiments of the invention, which should however not be construed as a limitation to the invention. Other exemplary semiconductor light-emitting devices and the manufacturing method thereof are provided in some other embodiments below to elaborate the semiconductor light-emitting device discussed in the disclosure.
  • FIG. 2A to FIG. 2D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a second embodiment of the invention. With reference to FIG. 2A, according to the manufacturing method of the semiconductor light-emitting device provided in the second embodiment, a substrate 110A is provided, and a light-emitting unit 120A is placed on the substrate 110A.
  • Specifically, the substrate 110A provided in the present embodiment is a ceramic substrate whose surface 111A has a circuit layer, and thus the substrate 110A is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120A. In another aspect, the light-emitting unit 120A provided herein is a flip-chip LED, for instance; hence, the light-emitting unit 120 can be directly electrically connected to the surface 111A of the substrate 110A.
  • With reference to FIG. 2B and FIG. 2C, according to the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120A is placed on the substrate 110A, the light-emitting unit 120A is encapsulated onto the substrate 110A by a phosphor layer 130A and a reflective layer 140A. That is, the phosphor layer 130A and the reflective layer 140A provided in the present embodiment basically cover the surface of the light-emitting unit 120A exposed by the substrate 110A.
  • To be specific, as shown in FIG. 2B, in the manufacturing method of the semiconductor light-emitting device provided herein, the reflective layer 140A is placed on the surface 111A of the substrate 110A, and the reflective layer 140A surrounds the light-emitting unit 120A and further covers a side surface 123A of the light-emitting unit 120A.
  • With reference to FIG. 2C, the reflective layer 140A provided in the present embodiment surrounds the light-emitting unit 120A along the side surface 123A of the light-emitting unit 120A, and an upper surface 141A of the reflective layer 140A and an upper surface 121A of the light-emitting unit 120A are substantially co-planar. Hence, in the manufacturing method of the semiconductor light-emitting device provided herein, after the reflective layer 140A is placed on the substrate 110A, the phosphor layer 130A can be well placed on the upper surface 141A of the reflective layer 140A and an upper surface 121A of the light-emitting unit 120A, and the light-emitting unit 120A can then be encapsulated onto the substrate 110A. Namely, in the step of encapsulating the light-emitting unit 120A onto the substrate 110A by the phosphor layer 130A and the reflective layer 140A, the reflective layer 140A is placed on the substrate 110A, and the phosphor layer 130A is then placed on the reflective layer 140A. Since the upper surface 141A of the reflective layer 140A and the upper surface 121A of the light-emitting unit 120A are substantially co-planar, the phosphor layer 130A can well cover said two upper surfaces 141A and 121A.
  • Particularly, the material of the reflective layer 140A includes silicon and titanium dioxide (TiO2), for instance, and the viscosity of the reflective layer 140A is within a range from 1000 mPa·s to 20000 mPa·s, for instance. The reflectivity of the reflective layer 140A falls within a range from 90% to 99%. The phosphor layer is made of phosphor and adhesives. However, the material, the viscosity, and the reflectivity of the reflective layer 140A are not limited in the invention, and neither is the material of the phosphor. In other embodiments of the invention, the reflective layer can be made of other materials with proper viscosity and reflectivity, and the phosphor layer can be made of the mixture of proper substance and phosphor capable of achieving the effects of fluorescent light. To be more specific, the reflective layer 140A provided herein is made of white glue and thus can be easily formed on the substrate 110A as well as surround the light-emitting unit 120A.
  • With reference to FIG. 2D, according to the manufacturing method of the semiconductor light-emitting device provided in the second embodiment, after the light-emitting unit 120A is encapsulated onto the substrate 110A by the phosphor layer 130A and the reflective layer 140A, the light-emitting unit 120A, the phosphor layer 130A, and the reflective layer 140A are further encapsulated onto the substrate 110A by a molding compound 150A. The molding compound 150A is made of a transparent material or a light transmissive material and is suitable for covering the light-emitting unit 120A, the phosphor layer 130A, and the reflective layer 140A on the substrate 110A. Here, the molding compound 150A can be shaped as a lens, such that the light emitted from the light-emitting unit 120A can be refracted by the molding compound 150A and can thus provide illumination at a proper light-emitting angle.
  • In view of the above, according to the manufacturing method of the semiconductor light-emitting device provided herein, the light-emitting unit 120A is encapsulated onto the substrate 110A by the reflective layer 140A and the phosphor layer 130A, and the reflective layer 140A arranged on the substrate 110A surrounds the light-emitting unit 120A. Hence, the reflective layer 140A can block the light emitted from the side surface of the light-emitting unit 120A, and the light emitted from the upper surface 121A of the light-emitting unit 120A can be converted to have proper color by means of the phosphor layer 130A that has the appropriate thickness and uniformly covers the upper surface of the light-emitting unit 120A. As a result, by applying the manufacturing method of the semiconductor light-emitting device discussed herein, the semiconductor light-emitting device 100A characterized by exceptional light-emitting quality can be formed. However, the manufacturing method of the semiconductor light-emitting device provided in the disclosure is not limited to that described in the second embodiment.
  • FIG. 3A to FIG. 3D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a third embodiment of the invention. With reference to FIG. 3A, the manufacturing method of the semiconductor light-emitting device provided in the third embodiment is similar to that described in the second embodiment above, i.e., a substrate 110B is provided, and a light-emitting unit 120B is placed on the substrate 110B. The substrate 110B is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120B.
  • With reference to FIG. 3B, in the manufacturing method of the semiconductor light-emitting device provided herein, the phosphor layer 130B is placed on the substrate 110B and the light-emitting unit 120B, and the light-emitting unit 120B is encapsulated onto the substrate 110B by the phosphor layer 130B. Namely, according to the manufacturing method of the semiconductor light-emitting device provided herein, the phosphor layer 130B covers the upper surface 121B and the side surface 123B of the light-emitting unit 120B.
  • With reference to FIG. 3C, in the manufacturing method of the semiconductor light-emitting device provided herein, after the phosphor layer 130B is placed on the substrate 110B and the light-emitting unit 120B, the reflective layer 140B surrounding the light-emitting unit 120B is placed on the side surface 131B of the phosphor layer 130B. Note that the phosphor layer 130B is configured to encapsulate the light-emitting unit 120B. Hence, the light emitted from the side surface 123B of the light-emitting unit 120B is reflected by the reflective layer 140B, and thus only the light from the upper surface 121B of the light-emitting unit 120B can be emitted.
  • The phosphor layer 130B formed on the upper surface 121B of the light-emitting unit 120B has the proper thickness; hence, the light-emitting unit 120B is capable of emitting the light with proper color through the phosphor layer 130B, and the light beams with significantly different colors can be blocked by the reflective layer 140B.
  • Particularly, the upper surface 141B of the reflective layer 140B provided in the present embodiment is substantially higher than the upper surface 121B of the light-emitting unit 120B and thus can achieve favorable optical blocking effects.
  • Particularly, the material of the reflective layer 140B includes silicon and titanium dioxide (TiO2), for instance, and the viscosity of the reflective layer 140B is within a range from 1000 mPa·s to 20000 mPa·s, for instance. The reflectivity of the reflective layer 140B falls within a range from 90% to 99%. The phosphor layer is made of phosphor or adhesives. However, the material, the viscosity, and the reflectivity of the reflective layer 140B are not limited in the invention, and neither is the material of the phosphor. In other embodiments of the invention, the reflective layer can be made of other materials with proper viscosity and reflectivity, and the phosphor layer can be made of the mixture of proper substance and phosphor capable of achieving the effects of fluorescent light.
  • With reference to FIG. 3D, according to the manufacturing method of the semiconductor light-emitting device provided in the third embodiment, after the light-emitting unit 120B is encapsulated onto the substrate 110B by the phosphor layer 130B and the reflective layer 140B, the light-emitting unit 120B, the phosphor layer 130B, and the reflective layer 140B are further encapsulated onto the substrate 110B by a molding compound 150B. The molding compound 150B is made of a transparent material or a light transmissive material and is suitable for covering the light-emitting unit 120B, the phosphor layer 130B, and the reflective layer 140B on the substrate 110B. Here, the molding compound 150B can be shaped as a lens, such that the light emitted from the light-emitting unit 120B can be refracted by the molding compound 150B and can thus provide illumination at a proper light-emitting angle.
  • In view of the above, according to the manufacturing method of the semiconductor light-emitting device provided herein, the light-emitting unit 120B is encapsulated onto the substrate 110B by the reflective layer 140B and the phosphor layer 130B, and the reflective layer 140B arranged on the substrate 110B surrounds the light-emitting unit 120B covered by the phosphor layer 130B. Hence, the reflective layer 140B can block the light emitted from the side surface of the light-emitting unit 120B, and the light emitted from the upper surface 121B of the light-emitting unit 120B can be converted to have proper color by means of the phosphor layer 130B that has the appropriate thickness and uniformly covers the upper surface 121B of the light-emitting unit 120B. As a result, by applying the manufacturing method of the semiconductor light-emitting device discussed herein, the semiconductor light-emitting device 100B characterized by exceptional light-emitting quality can be formed.
  • FIG. 4 is a schematic top view illustrating a semiconductor light-emitting device according to a fourth embodiment of the invention. In the second or third embodiment, the light-emitting unit is individually processed; by contrast, with reference to FIG. 4, the light-emitting unit 120C of the semiconductor light-emitting device 100C provided in the fourth embodiment of the invention comprises plural light-emitting chips 122C connected together. The light-emitting chips 122C are arranged to form the light-emitting device 120C with proper size and shape.
  • According to the present embodiment, the semiconductor light-emitting device 100C further includes a blocking wall 160C that surrounds a light-emitting region A, and the light-emitting unit 120C, the phosphor layer 130C, and the reflective layer 140C are arranged in the light-emitting region A. The manufacturing method of the semiconductor light-emitting device 100C provided in the fourth embodiment of the invention and the semiconductor light-emitting device 100C are elaborated with reference to cross-sectional views.
  • To clearly explain the semiconductor light-emitting device and the manufacturing method thereof in the present embodiment, FIG. 5A to FIG. 5D that are cross-sectional views illustrating steps in a manufacturing method of the semiconductor light-emitting device 100C according to the fourth embodiment of the invention are provided. Besides, the cross-sectional views in FIG. 5A to FIG. 5D correspond to the section line I2I2 in FIG. 4, for instance.
  • Similar to the previous embodiment, in the present embodiment as shown in FIG. 5A, a substrate 110C is provided, and a light-emitting unit 120C is placed on the substrate 110C. The substrate 110C is suitable for providing carrying, electrical connection, and heat dissipation function for the light-emitting unit 120C.
  • With reference to FIG. 5B, according to the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120C is formed on the substrate 110C, a blocking wall 160C is placed on the substrate 110C and surrounds the light-emitting region A. That is, the blocking wall 160C is fixed onto the upper surface 111C of the substrate 110C and surrounds the light-emitting region A where the light-emitting unit 120C is located.
  • In particular, the material of the blocking wall 160C includes silicon and TiO2 (or silicon dioxide, SiO2) and is pre-solidified on the substrate 110C to surround the light-emitting region A.
  • With reference to FIG. 5C, according to the manufacturing method of the semiconductor light-emitting device, after the blocking wall 160C is placed on the substrate 110C, the light-emitting region A is filled with the reflective layer 140C. The blocking wall 160C is suitable for limiting the reflective layer 140C to be located in the light-emitting region A, and the reflective layer 140C exposes the upper surface 122C of the light-emitting unit 120C and further blocks the light emitted from the side surface 123C of the light-emitting unit 120C.
  • Particularly, the material of the reflective layer 140A includes silicon and TiO2, for instance, and the viscosity of the reflective layer 140C is within a range from 1000 mPa·s to 20000 mPa·s, for instance. The reflectivity of the reflective layer 140C falls within a range from 90% to 99%. However, the material, the viscosity, and the reflectivity of the reflective layer 140C are not limited in the invention, and neither is the material of the phosphor. In other embodiments of the invention, the reflective layer may be made of other materials with proper viscosity and reflectivity.
  • With reference to FIG. 5D, in the manufacturing method of the semiconductor light-emitting device, after the reflective layer 140C is arranged, the phosphor layer 130C is placed on the upper surface 121C of the light-emitting unit 120C. In other words, the light-emitting unit 120C, the phosphor layer 130C, and the reflective layer 140C are all arranged in the light-emitting region A surrounded by the blocking wall 160C, so as to form the semiconductor light-emitting device 100C.
  • FIG. 6A to FIG. 6D are cross-sectional views illustrating steps in a manufacturing method of a semiconductor light-emitting device according to a fifth embodiment of the invention. Similar to the previous embodiment, in the present embodiment as shown in FIG. 6A, a substrate 110D is provided, and a light-emitting unit 120D is placed on the substrate 110D. The substrate 110D is suitable for providing carrying, electrical connection, and heat dissipation function to the light-emitting unit 120D.
  • With reference to FIG. 6B, according to the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120D is formed on the substrate 110D, a phosphor layer 130D is placed on the substrate 110D and the light-emitting unit 120D, and the light-emitting unit 120D is further encapsulated onto the substrate 110D by the phosphor layer 130D. Namely, according to the manufacturing method of the semiconductor light-emitting device provided herein, the phosphor layer 130D covers the upper surface 121D and the side surface 123D of the light-emitting unit 120D.
  • With reference to FIG. 6C, according to the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the phosphor layer 130D is arranged to cover the light-emitting unit 120D, a blocking wall 160D is placed on the substrate 110D and surrounds the light-emitting region B. Namely, the blocking wall 160D is fixed onto the substrate 110D and surrounds the light-emitting unit 120D covered by the phosphor layer 130D.
  • In particular, the material of the blocking wall 160C includes silicon and TiO2 (or SiO2) and is pre-solidified on the substrate 110D to surround the light-emitting region B.
  • With reference to FIG. 6D, according to the manufacturing method of the semiconductor light-emitting device, after the blocking wall 160D is placed on the substrate 110D, the light-emitting region B is filled with the reflective layer 140D. The blocking wall 160D is suitable for limiting the reflective layer 140D to be located in the light-emitting region B, and the reflective layer 140D exposes a portion of the phosphor layer 130D adjoining the upper surface 122D of the light-emitting unit 120D and further blocks the light emitted from the side surface of the light-emitting unit 120D. In brief, according to the manufacturing method of the semiconductor light-emitting device provided in the present embodiment, after the light-emitting unit 120D, the phosphor layer 130D, and the blocking wall 160D are placed on the substrate 110D, the light-emitting region B surrounded by the blocking wall 160D is filled with the reflective layer 140D, so as to form the light-emitting device 100D.
  • In view of the above, according to the manufacturing method of the semiconductor light-emitting device provided herein, the light-emitting unit 120D is encapsulated onto the substrate 110D by the reflective layer 140D and the phosphor layer 130D, and the blocking wall 160D can prevent the reflective layer 140D from overflowing to the outside of the light-emitting region B or the outside of the substrate 110D. Thereby, the production yield of the semiconductor light-emitting device 100D can be improved. The reflective layer 140D on the substrate 110D surrounds the light-emitting unit 120D covered by the phosphor layer 130D. Therefore, the reflective layer 140D is capable of blocking the light emitted from the side surface of the light-emitting unit 120D, and the light emitted from the upper surface 121D of the light-emitting unit 120D can be converted to a proper color by means of the phosphor layer 130D that has the appropriate thickness and uniformly covers the upper surface 121D of the light-emitting unit 120D. As a result, by applying the manufacturing method of the semiconductor light-emitting device discussed herein, the semiconductor light-emitting device 100D characterized by exceptional light-emitting quality can be formed.
  • On the other hand, the arrangement of encapsulating the light-emitting unit 120D onto the substrate 110D by the phosphor layer 130D as described in the fifth embodiment should not be construed as a limitation to the invention. FIG. 6E is a cross-sectional view illustrating a semiconductor light-emitting device according to another embodiment of the invention. With reference to FIG. 6E, similar to the manufacturing method of the semiconductor light-emitting device 100D provided in the fifth embodiment, the manufacturing method of the semiconductor light-emitting device 200D provided herein includes steps of placing a light-emitting chip 222D of a light-emitting unit 220D on a substrate 210D and covering an upper surface 221D of the light-emitting unit 220D by a phosphor layer 230D. A blocking wall 260D is located on the substrate 210D and surrounds the light-emitting region B, the light-emitting unit 220D equipped with the phosphor layer 230D is located in the light-emitting region B, and the reflective layer 240D can fill the light-emitting region B and surrounds the light-emitting unit 220D. That is, in the present embodiment, the phosphor layer 230D covers a portion of the surface of the light-emitting unit 220D, and the blocking wall 260D and the reflective layer 240D are formed. The large height of the reflective layer 240 allows the reflective layer 240D to better cover the side surface of the light-emitting unit 220D, and accordingly the light emitted by the semiconductor light-emitting device 200D can be reflected in an upward direction.
  • In the fourth embodiment and the fifth embodiment, the light-emitting chips 122C and 122D are closely arranged, which should however not be construed as a limitation to the invention. In another embodiment, the distance between the light-emitting chips may be 50 micrometers (μm) constantly.
  • FIG. 7A is a schematic top view illustrating a semiconductor light-emitting device according to a sixth embodiment of the invention. To clearly depict the relevant relationship among the devices in the semiconductor light-emitting device, the phosphor layer is omitted, which should however not be construed as a limitation to the invention. With reference to FIG. 7A, the semiconductor light-emitting device 100E provided in the sixth embodiment of the invention includes a plurality of light-emitting units 120E, a blocking wall 160E, and a reflective layer 140E on the substrate 110E. The light-emitting units 120E are located on the light-emitting region C on the substrate 110E, and the blocking wall 160E surrounds the light-emitting region C. Hence, the blocking wall 160E can restrict the reflective layer 140E to be located in the light-emitting region C, and the reflective layer 140E is arranged among the light-emitting units 120E, so as to provide a large reflective surface and improve the overall light-emitting efficiency of the semiconductor light-emitting device 100E.
  • FIG. 7B is a cross-sectional view taken along a line I3I3 depicted in FIG. 7A. With reference to FIG. 7B, a metal layer 170E is placed on the substrate 110E, and the light-emitting units 120E are arranged on a metal surface 171E of the metal layer 170E. The substrate 110E provided herein is made of a ceramic material or a metal material, so as to dissipate the heat from the light-emitting units 120E to a great extent.
  • In the present embodiment, the light-emitting units 120E and the metal layer 170E are located on the light-emitting region C on the substrate 110E, and the blocking wall 160E surrounds the light-emitting region C after the light-emitting units 120E are arranged on the metal surface 171E. In particular, the material of the blocking wall 160E includes silicon and TiO2 (or SiO2) and is pre-solidified on the substrate 110E to surround the light-emitting region C.
  • In the present embodiment, the reflective layer 140E is located in the light-emitting region C, and the blocking wall 160E is suitable of limiting the reflective layer 140E to be located in the light-emitting region C. The space among the light-emitting units 120E is filled with the reflective layer 140E, i.e., the reflective layer 140E in the light-emitting region C is located in an area exposed by the light-emitting units 120E and covers the side surfaces of the light-emitting units 120E.
  • From another perspective, an upper surface 141E of the reflective layer 140E is substantially lower than upper surfaces 121E of the light-emitting units 120E and an upper surface 161E of the blocking wall 160E. That is, the upper surface 141E of the reflective layer 140E is co-planar with or lower than the upper surfaces of the light-emitting units 120E, and thus the flowable material constituting the reflective layer 140E can be easily formed in the light-emitting region C.
  • According to the present embodiment, the phosphor layer 130E covers the reflective layer 140E and the light-emitting units 120E, and the light-emitting units 120E are encapsulated onto the substrate 110E. The reflective layer 140E can block the light emitted from the side surfaces of the light-emitting units 120E, and the upper surface 141E of the reflective layer 140E can provide a large reflective surface, such that the light from the upper surfaces 120E of the light-emitting units 120E can be emitted in an efficient manner. Moreover, the phosphor layer 130E can be well formed on the reflective layer 140E and the light-emitting units 120E. As a result, the semiconductor light-emitting device 100 provided herein is characterized by exceptional light-emitting quality.
  • To sum up, the reflective layer of the semiconductor light-emitting device provided in an embodiment of the invention surrounds the light-emitting unit and exposes the phosphor layer on the upper surface of the light-emitting unit. While the reflective layer reflects the light emitted from the upper surface of the light-emitting unit, the reflective layer can simultaneously block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality. Besides, according to the manufacturing method of the semiconductor light-emitting device provided in an embodiment of the invention, when the light-emitting unit is encapsulated by the phosphor layer and the reflective layer, the reflective layer surrounds the light-emitting unit and exposes the phosphor layer adjoining the upper surface of the light-emitting unit. Thereby, while the reflective layer reflects the light emitted from the upper surface of the light-emitting unit, the reflective layer can simultaneously block the light emitted from the side surface of the light-emitting unit, such that the semiconductor light-emitting device is capable of emitting light with favorable quality.
  • Although the disclosure has been provided with reference to the above embodiments, it will be apparent to one of ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the disclosure. Accordingly, the scope of the disclosure will be defined by the attached claims and not by the above detailed descriptions.

Claims (20)

What is claimed is:
1. A semiconductor light-emitting device comprising:
a substrate;
at least one light-emitting unit arranged on the substrate;
a phosphor layer at least covering an upper surface of the at least one light-emitting unit; and
a reflective layer arranged on the substrate and surrounding the at least one light-emitting unit.
2. The semiconductor light-emitting device of claim 1, wherein the reflective layer covers a side surface of the at least one light-emitting unit.
3. The semiconductor light-emitting device of claim 2, wherein an upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
4. The semiconductor light-emitting device of claim 1, wherein the phosphor layer encapsulates the at least one light-emitting unit onto the substrate, and the reflective layer covers the side surface of the phosphor layer configured to encapsulate the at least one light-emitting unit.
5. The semiconductor light-emitting device of claim 4, wherein an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
6. The semiconductor light-emitting device of claim 1, further comprising a molding compound, the molding compound encapsulating the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate.
7. The semiconductor light-emitting device of claim 1, further comprising a blocking wall, wherein the blocking wall is arranged on the substrate and surrounds a light-emitting region, and the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
8. The semiconductor light-emitting device of claim 7, wherein an upper surface of the reflective layer is substantially lower than the upper surface of the at least one light-emitting unit and an upper surface of the blocking wall.
9. The semiconductor light-emitting device of claim 1, wherein the at least one light-emitting unit comprises a plurality of light-emitting chips, and the light-emitting chips are connected together.
10. The semiconductor light-emitting device of claim 1, wherein if the quantity of the at least one light-emitting units is plural, the reflective layer is further arranged between the light-emitting units.
11. A manufacturing method of a semiconductor light-emitting device, comprising:
providing a substrate;
placing at least one light-emitting unit on the substrate; and
encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer, wherein the phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.
12. The manufacturing method of claim 11, wherein the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further comprises:
placing the reflective layer on the substrate, the reflective layer covering a side surface of the at least one light-emitting unit; and
placing the phosphor layer on the upper surface of the at least one light-emitting unit or on the upper surface of the at least one light-emitting unit and an upper surface of the reflective layer after the reflective layer covers the side surface of the at least one light-emitting unit.
13. The manufacturing method of claim 12, wherein the upper surface of the reflective layer is substantially co-planar with the upper surface of the at least one light-emitting unit.
14. The manufacturing method of claim 11, wherein the step of encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer further comprises:
encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer; and
placing the reflective layer on a side surface of the phosphor layer of the at least one light-emitting unit.
15. The manufacturing method of claim 14, wherein an upper surface of the reflective layer is substantially higher than the upper surface of the at least one light-emitting unit.
16. The manufacturing method of claim 11, wherein after encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer, the manufacturing method further comprises:
encapsulating the at least one light-emitting unit, the phosphor layer, and the reflective layer onto the substrate by a molding compound.
17. The manufacturing method of claim 11, wherein before encapsulating the at least one light-emitting unit onto the substrate by the phosphor layer and the reflective layer, the manufacturing method further comprises:
placing a blocking wall on the substrate, the blocking wall surrounding a light-emitting region, wherein the at least one light-emitting unit, the phosphor layer, and the reflective layer are arranged in the light-emitting region.
18. The manufacturing method of claim 17, wherein when the at least one light-emitting unit is encapsulated onto the substrate by the phosphor layer and the reflective layer, the blocking wall is adapted to restricting the reflective layer to be located in the light-emitting region.
19. The manufacturing method of claim 11, wherein the step of placing the at least one light-emitting unit on the substrate further comprises:
placing a plurality of light-emitting chips on the substrate, the light-emitting chips being connected together and constituting the at least one light-emitting unit.
20. The manufacturing method of claim 11, wherein if the quantity of the at least one light-emitting units is plural, the reflective layer is further arranged between the light-emitting units.
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