TW200908152A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
TW200908152A
TW200908152A TW097113552A TW97113552A TW200908152A TW 200908152 A TW200908152 A TW 200908152A TW 097113552 A TW097113552 A TW 097113552A TW 97113552 A TW97113552 A TW 97113552A TW 200908152 A TW200908152 A TW 200908152A
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TW
Taiwan
Prior art keywords
hole
insulating film
film
semiconductor
semiconductor substrate
Prior art date
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TW097113552A
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English (en)
Chinese (zh)
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TWI357111B (enExample
Inventor
Michihiro Kawashita
Yasuhiro Yoshimura
Naotaka Tanaka
Takahiro Naito
Takashi Akazawa
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Renesas Tech Corp
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Publication of TW200908152A publication Critical patent/TW200908152A/zh
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Publication of TWI357111B publication Critical patent/TWI357111B/zh

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    • H10W20/023—
    • H10P72/74—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/2125—
    • H10W90/00—
    • H10P72/7436—
    • H10W70/60—
    • H10W72/00—
    • H10W72/01225—
    • H10W72/072—
    • H10W72/07227—
    • H10W72/241—
    • H10W72/244—
    • H10W72/251—
    • H10W72/29—
    • H10W72/923—
    • H10W72/932—
    • H10W72/9415—
    • H10W72/942—
    • H10W90/297—
    • H10W90/722—
    • H10W90/724—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW097113552A 2007-06-06 2008-04-14 Semiconductor device and manufacturing method thereof TW200908152A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007150289A JP4937842B2 (ja) 2007-06-06 2007-06-06 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200908152A true TW200908152A (en) 2009-02-16
TWI357111B TWI357111B (enExample) 2012-01-21

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Family Applications (1)

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TW097113552A TW200908152A (en) 2007-06-06 2008-04-14 Semiconductor device and manufacturing method thereof

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US (2) US7973415B2 (enExample)
JP (1) JP4937842B2 (enExample)
KR (1) KR101191492B1 (enExample)
CN (1) CN101320702B (enExample)
TW (1) TW200908152A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452664B (zh) * 2010-09-17 2014-09-11 東芝股份有限公司 Semiconductor device and manufacturing method thereof
TWI456723B (zh) * 2011-02-01 2014-10-11 南亞科技股份有限公司 積體電路裝置及其製備方法
TWI459475B (zh) * 2009-10-30 2014-11-01 海力士半導體股份有限公司 製造半導體裝置之方法

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US8796822B2 (en) * 2011-10-07 2014-08-05 Freescale Semiconductor, Inc. Stacked semiconductor devices
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JP5810921B2 (ja) * 2012-01-06 2015-11-11 凸版印刷株式会社 半導体装置の製造方法
CN103240481B (zh) * 2012-02-08 2016-07-06 西安永电电气有限责任公司 焊接工装件
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CN103633013B (zh) * 2012-08-21 2016-06-29 中芯国际集成电路制造(上海)有限公司 硅通孔封装结构的形成方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459475B (zh) * 2009-10-30 2014-11-01 海力士半導體股份有限公司 製造半導體裝置之方法
TWI452664B (zh) * 2010-09-17 2014-09-11 東芝股份有限公司 Semiconductor device and manufacturing method thereof
TWI456723B (zh) * 2011-02-01 2014-10-11 南亞科技股份有限公司 積體電路裝置及其製備方法

Also Published As

Publication number Publication date
JP2008305897A (ja) 2008-12-18
KR101191492B1 (ko) 2012-10-15
US8324736B2 (en) 2012-12-04
TWI357111B (enExample) 2012-01-21
KR20080107288A (ko) 2008-12-10
US20090014843A1 (en) 2009-01-15
US7973415B2 (en) 2011-07-05
CN101320702A (zh) 2008-12-10
US20110233773A1 (en) 2011-09-29
JP4937842B2 (ja) 2012-05-23
CN101320702B (zh) 2010-07-21

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