TW200901514A - LED with phosphor tile and overmolded phosphor in lens - Google Patents
LED with phosphor tile and overmolded phosphor in lens Download PDFInfo
- Publication number
- TW200901514A TW200901514A TW097106719A TW97106719A TW200901514A TW 200901514 A TW200901514 A TW 200901514A TW 097106719 A TW097106719 A TW 097106719A TW 97106719 A TW97106719 A TW 97106719A TW 200901514 A TW200901514 A TW 200901514A
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- Prior art keywords
- lens
- led
- phosphor
- light
- mold
- Prior art date
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 217
- 238000000034 method Methods 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000000465 moulding Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 79
- 239000007788 liquid Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 24
- 229920002098 polyfluorene Polymers 0.000 claims description 19
- 238000011049 filling Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 239000003086 colorant Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 230000001052 transient effect Effects 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000005352 clarification Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- 235000012431 wafers Nutrition 0.000 description 41
- 239000011257 shell material Substances 0.000 description 26
- 239000002245 particle Substances 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 16
- 229920002675 Polyoxyl Polymers 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 11
- -1 polyoxime Substances 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229930040373 Paraformaldehyde Natural products 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 229920001021 polysulfide Polymers 0.000 description 4
- 239000005077 polysulfide Substances 0.000 description 4
- 150000008117 polysulfides Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000005094 computer simulation Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 241000219307 Atriplex rosea Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000001652 electrophoretic deposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000151 polyglycol Polymers 0.000 description 2
- 239000010695 polyglycol Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 241000238876 Acari Species 0.000 description 1
- 229920001875 Ebonite Polymers 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229930182764 Polyoxin Natural products 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- RRTVMIJPICMRAZ-UHFFFAOYSA-N [P].[Ru] Chemical compound [P].[Ru] RRTVMIJPICMRAZ-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- YEBIHIICWDDQOL-YBHNRIQQSA-N polyoxin Polymers O[C@@H]1[C@H](O)[C@@H](C(C=O)N)O[C@H]1N1C(=O)NC(=O)C(C(O)=O)=C1 YEBIHIICWDDQOL-YBHNRIQQSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/14—Dipping a core
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/20—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. moulding inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/22—Making multilayered or multicoloured articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0018—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular optical properties, e.g. fluorescent or phosphorescent
- B29K2995/0031—Refractive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2011/00—Optical elements, e.g. lenses, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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Description
200901514 九、發明說明: 【發明所屬之技術領域】 本發明係關於發光二極體(LED)且尤其係關於某些透鏡 設計及用於在LED晶粒上形成透鏡之技術。 本案是美國申請案第1 1/093,961號的部份接續(CIP)案, 其是 Willem Smits、Grigorily Basin 等人於 2005年 3 月 29 曰 申請’名稱為"能用於背光之LED的寬發射透鏡(Wide Emitting Lens for LED Useful for Backlighting)",該案是 美國申請案第ll/〇69,418號的CIP,其是Grigorily Basin等 人於2005年2月28曰申請’名稱為”在LED晶粒上之包覆成 型透鏡(Overmolded Lens Over LED Die)”,該案是美國申 請案第10/990,208號的CIP,其是Grigorily Basin等人於 2004年11月15日申請’名稱為"在LED晶粒上之成型透鏡 (Molded Lens Over LED Die)”,所有案件均以引用的方式 併入本文中。 【先前技術】 LED晶粒通常以朗伯(Lambertian)圖案發光。通常在LED 晶粒上使用透鏡以使光束變窄或產生側向發射圖案。用於 表面安裝LED之通常類型之透鏡為預成型之模製塑膠,其 與其中安裝LED晶粒之封裝結合。美國專利第6,274,924號 中顯示一種該透鏡,其讓渡予Philips Lumileds Ughting Company且以引用的方式併入本文中。 【發明内容】 本文描述形成用於表面安裝led之成型透鏡之技術以及 129413.doc 200901514 透鏡之各種設計 體之各種技術。 亦描述用於在透鏡内提供色彩轉化磷光 ㈣成透鏡之-方法中,將—個led晶粒或多個㈣晶 粒安裝在支撐結構±。支I纟㈣可為H基板、⑦基板或 使L E D晶粒與支撐結構上之金屬塾電連接之其他類型支撐 結構。支撐結構可為安裝於封裝中之電路板或散熱片上之 次載具。 模具中具有對應於支撐結構上之LED晶粒之位置的凹 槽。將凹槽充滿液體光學透明材料,諸如聚石夕氧,當固化 時其形成硬化透鏡材料。凹槽之形狀將為透鏡之形狀。將 二及LED sa粒/支擇結構集合於一起,以便每一 LED晶粒 存在於相關凹槽中之液體透鏡材料内。 隨後將模具加熱以使透鏡材料固化(硬化)。隨後使模具 及支撐結構分離,從而在每一 LED晶粒上留下完整透鏡。 將此一般過程稱為包覆成型。與在將空模具包圍於待密封 之物件周圍之後在高壓下注入液體材料之射出成型技術相 反,本發明未使用該注入且LED及任何導線結合不會由於 成型過程而受到應力。亦極少浪費透鏡材料。此外,在模 具凹槽之間不存在如射出成型所需之導管。 包覆成型過程可用不同模具重複以產生重疊之透鏡殼 層。透鏡可含有磷光體之任何組合以將LED光轉化為任何 色彩(包括白色)。 在一實施例中,藉由在加熱及壓力下燒結確光體顆粒或 藉由乾燥填光體顆粒之漿料形成薄陶瓷填光板。各板之表 129413.doc 200901514 面大約為激勵LED(諸如藍色LED)之上表面的尺寸。磷光 體可為YAG構光體,其巾來自LED之藍光與來自⑽光 體之綠黃光之組合產生白光。板可附著於安裝於次載具晶 圓上之LED上’且隨後在各㈣結構上成型澄清透鏡。隨 後分離次載具以分開led結構。 在另實施例中’ LED及YAG^I光板上之成型透鏡包括 紅色鱗光體以產生溫暖白光。 在另-實施例中’首先將磷光板暫時安裝於背板上,且 在碟光板上成型含有紅色璘光體之透鏡。將具有包覆成型 之透鏡的板自背板移除且附著至激勵咖之頂部。隨後在 各LED結構上成型澄清透鏡。 口為碟光板係平坦的’故當視角接近垂直於[ED續光體 之表面的角度時’色溫變暖(更藍)。為補償此色彩對角度 之不均勻'J·生,含有紅色磷光體之模具之形狀經界定以便當 視角變化時色溫更均勾。因此模具之形狀取決於所使用的 特定LED及磷光板。 在一實施例中,用於藉由包覆成型來形成外部透鏡之固 化^氧與由包覆成型形成之任何内部透鏡相比更硬。當
透鏡被形成或㈣發熱時較軟内部透鏡不會對脆弱的LED 施加應力,而硬外部透鏡保護其不受外界自然力的影響且 保持清潔。 在另-實施例中,多個LED,或咖與(諸如)用於靜電 放電(ESD)保護之另—晶片藉由單次包覆成型透鏡密封, 其中透鏡之形狀係基於所密封之特定晶片。 129413.doc 200901514 在另-實施例中’在LED上形成成型透鏡,其中透鏡可 為澄清的或載有碟光體的。透鏡之頂部具有平坦部分。隨 後將與LED具有約同—尺寸之預製準直透鏡,諸如費淫 (Fresnel透鏡,附著於包覆成型透鏡之平坦部分。該小準 • 直光源尤其適用作行動電話相機之閃光燈。 在另貝施例中,將軟聚石夕氧凝膠用作LED與次載具之 ㈣底部填充劑以填充任何空隙。底部填充劑可視情㈣ f、 #LED之側面。隨後用硬透鏡將所得結構包覆成型。底部 填充劑有助於在加工及操作期間支撐LED晶粒,將熱耦合 至次載具,且減小LED晶粒與硬外部透鏡之間的應力。 描述透鏡之許多其他實施例及應用。 【實施方式】 作為預備,習知LED形成於生長基板上。在所用之實例 中,led為用以產生藍光或紫外光之基於GaN之led,諸 如A1InGaN led。通常,使用習知技術使相對厚之〇型〇心 (層生長於藍寶石生長基板上。相對厚之GaN層通常包括低 溫晶核層及一或多個額外層以便提供用於n型覆蓋層及有 效層之低缺陷晶格結構。隨後在厚η型層上形成一或多個η " 型覆蓋層,之後形成一有效層、一或多個Ρ型覆蓋層及一ρ ' 型接觸層(用於金屬化)。 使用各種技術以電連通至η層。在覆晶實例中,蝕去ρ層 及有效層之部分以曝露用於金屬化之η層。以此方式,ρ接 觸區及η接觸區位於晶片之同一側面且可與封裝(或次載具) 接觸墊直接電連接。來自η金屬接觸區之電流最初橫向擴 129413.doc 200901514 散穿過η層。相反’在垂直注入(非覆晶)LED中,η接觸區 形成於晶片之一側面上且ρ接觸區形成於晶片之另一側面 上。至ρ或η接觸區中之一者之電接觸通常由導線或金屬橋 接產生’且另一接觸區直接與封裝(或次載具)接觸墊結 合。為簡便,在圖1 -3之實例中使用覆晶LED。 形成LED之實例描述於美國專利第6,649,440號及第 6,274,399號中,兩者均讓渡給phiHpS Lumileds Lighting
Company且以引用的方式併入本文中。
Ο 視情況,使導電基板與LED層(通常與ρ層)結合且移除藍 寶石基板。一或多個LED晶粒可與次載具上之金屬墊結 合,而導電基板與金屬墊直接結合,將參看圖5及6更詳細 描述其。一或多個次載具之電極可與含有用以連接其他 LED或電源之金屬引線之印刷電路板結合。電路板可以串 行及/或並行方式互連各種led。 所形成之特定LED及是否 對於理解本發明之目的而 其安裝於次載具上並不重要。 圖1為安裝於支撐結構12上之4個LED晶粒1〇之側視圖。 支撐結構可為次載具(例如,具有金屬引線之陶竟或石夕)、 金屬散熱片、印刷電路板或任何其他結構。在本發明之實 例中支撐結構1 2為具有金屬塾/引線之陶兗次載具。 核具14具有對應於每_咖晶粒1()上之所要形狀之透鏡 的凹槽16。模具14較佳由金屬形成。將具有模具14之大體 形狀的極薄非黏著薄膜18置放或形成於模具U上。薄膜18 由防止聚石夕氧黏著於金屬之熟知的習知材料製成。、 1294I3.doc 200901514 若透鏡材料不黏附;^ μ a _ 寸於杨具,則不需要薄膜18。此可藉由 使用非黏者模具塗料,你用非孝卜盆> ^ 使用非黏者模具材料或使用產生非 黏著界面之成型過程央眘目 _ _ _ 往來實現。該等過程可包括選擇某些加 工溫度以獲得最小黏附。葬由X你田咕▲ 精由不使用溥膜1 8,可形成更多 複透鏡。 在圖2十’模具凹槽16已用熱固性液體透鏡材料20填 充。透鏡材料20可為任何合適光學透明材料,諸如聚石夕 氧、環氧樹脂或混合聚矽氧/環氧樹脂。可使用混合物以 獲付匹配之熱膨脹係數(CTE)。聚石夕氧及環氧樹脂具有充 足高之折射率(大於丨.4)以大大改良自A1InGa_AiinGaj) LED之光提取以及充當透鏡。一種類型之聚矽氧具有"ο 之折射率。 在支撐結構12之周邊與模具丨4之間產生真空密封,且兩 部分被彼此壓抵,以使得每一 LED晶粒1〇插入液體透鏡材 料20中且透鏡材料2〇受壓縮。 隨後將模具加熱至約150攝氏度(或其他合適溫度)歷時 一段時間以硬化透鏡材料2 〇。 後使支撐結構12與模具14分離。薄膜18使所得硬化透 鏡可易於自模具1 4上釋放。隨後移除薄膜丨8。 在另一實施例中,可首先用諸如黏合劑中之聚矽氧或構 光體微粒之材料將圖!中之Led晶粒10覆蓋。用另一材料 填充模具凹槽16。當隨後將晶粒置放於模具中時,成型材 料成形於覆蓋材料上。 圖3說明在每一 LED晶粒1〇上具有成型之透鏡22之所得 129413.doc -11 - 200901514 結構。在一實施例中,成型之透鏡直徑在丨爪^與5 mm之 間。透鏡22可為任何尺寸或形狀。 圖4為所得結構之透視圖,其中支撐結構12支撐各自具 有成型之透鏡22之一陣列的LED晶粒。所用之模具具有對 應之凹槽陣列。若支撐結構12為陶瓷或矽次載具,則可藉 由鋸切或分斷次載具12來分開每一LED(連同其下層次載具 邛为)’以开> 成個別LED晶粒。或者,可分開/切割支撐結 構12以支撐LED之子群,或可在不分開/切割之情況下使 用。 透鏡22不僅改良自LED晶粒之光提取且折射光以產生所 要發射圖案,而且透鏡亦密封LED晶粒以保護晶粒免受污 染、增加機械強度及保護任何導線結合。 圖5為由任何合適材料(諸如陶瓷或矽)形成之次載具24 上之單覆晶LED晶粒1 0之一實施例之簡化近視圖。在一實 施例中,次載具24用作圖1-4中之支撐結構12,且藉由鑛 切將圖5之晶粒/次載具與圖4之結構分開。圖$之led晶粒 1〇具有底部p接觸層26、p金屬接觸區27、p型層28、光發 射有效層30、n型層32,及與n型層32接觸之n金屬接觸區 31。次載具24上之金屬墊直接與接觸區27及31金屬結合。 穿過次载具24之通道端接於次載具24之底面上之金屬墊 中’該4金屬塾結合至電路板45上的金屬引線4〇及44。金 屬引線40及44與其他lED或電源連接。電路板45可為具有 上覆絕緣層之金屬引線40及44之金屬板(例如鋁)。使用圖 1-3之技術形成之成型透鏡22密封LED晶粒1 〇。 129413.doc -12- 200901514 圖5中之LED晶粒1 0亦可*非费η ^ j j马非覆晶晶粒,其中導線使頂 部η層32與次载具24上之金屬轨、*枝 ± 立屬垫連接。透鏡22可密封導 線。 在一實施例中,電路板4$ * g π * 1 攸Μ本身可為圖I-3之支撐結構 1 2。圖6顯示該實施例。圖6盍目女# 111 0马具有猎由導線38與電路板45 上之金屬引線4〇連接之頂部„ a ja &々
貝η金屬接觸區34之非覆晶LED 晶粒1 0之簡化近視圖。蔣T Pn s ,, 圃肘tED晶粒1〇安襄於次載具36上, 〇 該次載具3 6在圖6之實例中亙a H t 貝1J T為金屬板。導線42使p層26/28 與電路板45上之金屬引線44¾•、击4立 . 丨深44電連接。透鏡22被顯示為完全 密封導線及次載具3 6 ;然而,卢甘几也 ,、胃 在其他實施例中,不需要密 封整個次載具或整個導線。 通常的先前技術之密封方、、土 & > 在訂万去為旋塗保護塗料。然而,彼 密封過程不適用於向LED曰軔士 $丄虫 U日日粒中添加磷光體塗料,因為 LED晶粒上之密封物之屋厗 ’ 乏厚度不均勻。該等密封方法亦不會 形成透鏡。用以在led晶粒卜担也r# μ咖 曰曰粒上k供磷先體之通常技術為用 聚矽氧/磷光體組合物填充包圍LED晶粒之反射杯。缺而, =術形成具有變化厚度之鱗光體層且不形成合適透鏡。 若品要透鏡,則額外過避/ 卜迥私仍必須產生塑膠成型之透鏡且使 其附著於LED晶粒上。 圖^1說明可使用以上所述之技術形成之各種透鏡。 圖7忒明已使用任何合適方法塗佈磷光體6。之l e 二:==為電泳,描述於美國專利W ^ /、讓渡給 Philips T nm . 1 1 的方式併人本文中。合1 ?、,S Llghting C°mpany且以引用 5、W光體已為吾人熟知。使用以上 I29413.doc 13. 200901514 所述之技術形成透鏡22。磷光體60由LED發射(例如,藍光 或紫外光)來激發’且發射不同波長之光(諸如綠色、黃色 或紅色)。單獨或與LED發射結合之填光體發射可產生白 光。 用磷光體塗佈LED之過程係耗時的。為免除用磷光體塗 佈LED晶粒之過程,可使磷光體粉末與液體聚矽氧混合以 便使其包埋於透鏡62中(顯示於圖8中)。 如圖9所示’為提供LED晶粒上之謹慎控制之峨光體材 料厚度,使用上述技術形成内部透鏡64,且使用單獨的成 型步驟(使用具有較深及較寬凹槽之模具)形成直接位於内 部透鏡64上之具有任何厚度之外部填光體/聚矽氧殼層 66 ° 圖10說明可使用另一模具於磷光體/聚矽氧殼層66上形 成以進一步成形光束的外部透鏡68。 圖11說明分別上覆澄清聚矽氧殼層76、78及8〇之紅光、 綠光及藍光磷光體之殼層70、72及74。在此情況下,LED 晶粒1 0發射紫外光,且紅光、綠光及藍光之組合產生白 光。用上述方法產生所有殼層。 可使用上述成型技術形成許多其他形狀之透鏡。圖12為 LED 10、次載具24及成型之側發射透鏡84之橫截面圖。在 一實施例中,透鏡84由極可撓材料形成,諸如聚矽氧,其 在自模具移除時彎曲。當透鏡不為簡單形狀時,通常不使 用釋放薄膜18(圖1)。 圖13為LED 10、次載具24及成型之準直透鏡86之橫截面 129413.doc •14· 200901514 圖。可使用可變形模具或藉由使用當自模具拉伸時壓縮且 在自模具釋放之後擴展至其成型形狀的軟透鏡材料來產生 透鏡86。 圖14說明預成型之透鏡88可如何附著於成型之朗伯透鏡 22上。在圖14之實例中,以先前所述之方式形成透鏡22。 透鏡22用以役封及保a蔓LED 1 〇免受污染。隨後使用uv可 固化黏著劑或機械夾子使預成型之側發射透鏡88附著於透
鏡2 2上。此透鏡形成技術具有與習知技術相比之優點。在 翫知技術中,預成型之透鏡(例如,側發射透鏡)黏著地附 著於LED晶粒上,且藉由注入聚矽氧而填滿任何空隙。由 於仔細定位分離之晶粒/次載具以用於透鏡置放及間隙填 充步驟之原因,習知過程難於進行。使用圖14之本發明之 技術,可藉由於每一LED上形成成型透鏡而同時密封一大 陣列的LED(圖4)。隨後,當LED仍位於陣列中(圖4)時或在 刀離之後可將預成型之透鏡88附著於每—成型之透鏡 上。 乃外,不同於習知透鏡,可 (例如’ 1-2 mm直徑)。因此,ότ相士、枚, )U此可形成極小的完全密封之 LED 可製造該等LED以且有極低於厳,甘士 ”另搜低輪廓,其有益於某些應 用。 一, 。此電路板45 之其他顯示器 、蜂巢式電話 圖14亦顯示其上安裝次載具24之電路板45 之上可能已安裝有一陣列的LED/次載具Μ。 圖15為用於液晶顯示器(LCD)或使用背光 之背光的橫截面圖。通常用於電視、監視器 129413.doc -15- 200901514 等。LED可為紅色、綠色及藍色以產生白光。LED形成二 維陣列。在所示實例中,各LED結構為圖14中所示,但可 使用任何合適透鏡。較佳用自色反射漫射材料塗佈背光箱 之底部及側壁9卜在各LED正上方的為白色漫射點92以防 止光點由背光直接發射到各LED上方。點92藉由透明或漫 射之PMMA薄板94支撐。藉由側發射透鏡88發射之光在背 光之較低部分混合,隨後在離開上部漫射體%之前進一步 在背光之較高部分混合。可將LED之線性陣列安裝於窄電 路板45上。
圖16說明用作相機之閃光燈的具有成型之透鏡。之LED 10。圖16中之相機為蜂巢式電話98之一部分。蜂巢式電話 98包括彩色螢幕100(其可具有使用本文所述之led之背光) 及小鍵盤102。 如圖10中所述,可於内殼層上形成外部透鏡以進一步成 形光束。可視各種殼層之需要使用不同殼層材料。圖17_ 30說明可結合包覆成型過程使用之各種透鏡及材料之實 例。 圖1 7及1 8說明使用以上所述成型技術形成之内殼層的成 型透鏡的兩種形狀。可將許多LED 10安裝於同一支撐結構 12上。支撐結構可為如先前所述的具有金屬迹線及接觸墊 之陶瓷或矽次載具。可將任意數目的LED安裝於同一支撐 結構1 2上’且儘管不必須’但通常以相同方式加工同一支 樓結構1 2上之所有LED。舉例而言,若支撐結構大且整個 LED陣列之光圖案已指定,則各LED透鏡可不同以提供所 129413.doc -16- 200901514 指定之總體光圖案。 可注入底部填充材料以填充LED晶粒ig之底部與支撐物 基板12之間的任何間隙以尤其防止咖下之任何氣隙且改 良熱傳導。 以上參看圖3·6描述圖17,其中内部成型透鏡22大體為 半球形以獲得朗伯㈣圖案。圖18中之内部成型透鏡1〇6 大體為具有®緣之㈣。取決於㈣由外部透鏡提供之韓 射圖案,内部成型透鏡22或1〇6中之—者可能更合適。其 他形狀之内部成型透鏡亦可能合適。各透鏡之俯視圖一般 為圓形的。 圖19說明透鏡外表面具有折射光以獲得所要韓射圖案之 圖案的圖18之結構。外表面圖案可在内部成型透鏡中直接 :成(猎由模具本身),或外表面圖案可在包覆成型於内部 ㈣,鏡上或藉由黏著劑(例如,聚㈣、環氧樹脂請 :於,、上之外部透鏡中形成。圖案⑽為繞射光柵,而圖 J1 〇使用-謂梯(bi賺y steps)以折射光。在實例中圖 =具:圖2°中所示之轄射圖案之大體側發射透鏡。在 =中’峰值強度出現於5。_8。度内,且顯著大於。度下之 兴=_透鏡之要求—般㈣於對於外部透鏡之要求。 :_内部透鏡應具㈣切結構之良好黏著性 7間推:而變黃或變得更不透明、具有高折射率(大於 】·4)、不斷開或壓迫任何至LED之 么一 度且具有相容的熱係數。内部透庫:…南LED溫 边鏡應為非剛性的(例如, 129413.doc 200901514 聚矽氧)以不對led或任何導線施加應力。相反,外部透鏡 材料一般僅須能夠被圖案化成具有所要圖案且黏著於内部 透鏡。外部透鏡可包覆成型或可預成型且黏附地附著於内 部透鏡上。外部透鏡之材料可uv固化,而内部透鏡之材 料可熱固化。與UV固化相比,熱固化需要較長時間。 一般而言,内部透鏡材料之硬度範圍為肖氏(shore) 00 5-90,而外殼層之硬度範圍為肖氏A 3〇或更高。
圖21說明用於產生類似於圖2〇圖案之大體側發光圖案之 形成於透鏡外表面上之費涅透鏡圖案112。如參看圖19所 述,該外表面可為内部成型透鏡之外表面或外殼層之外表 面。此適用於本文所述之所有圖案。 以產生準直光圖案或另 圖22說明位於外部透鏡表面上用 一光圖案之角錐體114或錐狀116圖案。 鏡 118。 圖23說明用於產生準直圖案之高半球外部透 可配置圖19及21-23之表面圖安丨l 衣1^圖案(例如’藉由改變表面角 度 案 常 )以產生任何光圖案。可报士 a你 ^ 』形成全像結構、TIR及其他圖 。準直光圖案通常用於背而奸& 月面才又影TV,而側發光圖案通 用於背光照明之LCD營幕。 圖24說明使用諸如聚石夕氧凝腴夕从丨,^ ’乳滅膝之軟材料作為内部成型透 鏡124以便不對與LED 1〇結合之遙妗> 、°。之導線126施加應力。該凝膠 通常為UV固化的。外部透鏡丨 I达纜128可被成型或預成型且以黏 著劑附著。外部透鏡128通當#石承,v你上 吊更硬以便耐用、抵抗微粒 等。外部透鏡128可為聚石夕轰、 7%乳聚矽氧、環氧樹脂、 聚矽氧彈性體、硬橡膠、並他臂人 八他1合物或其他材料。外部透 129413.doc 200901514 鏡可uv固化或熱固化。 圖25類似於圖24,但具有不同形狀之内部成型透鏡 129(如圖18)以獲得不同發射圖案或較低輪廓。透鏡可 為軟聚矽氧凝膠。外部透鏡13〇進一步成形發射圖案且保 護軟的内部透鏡129。 所有圖中之LED可為覆晶或導線結合類型。 圖26說明一 LED結構,其具有具内部透鏡所需特性之軟 内部成型透鏡132、充當中間層並用以獲得結構穩定性之 硬中間殼層134,及用以產生側發光圖案之外部透鏡136。 外部透鏡136可為軟的以促進成型過程。或者,外部透鏡 1 3 6可被預成型且黏性地附著於中間殼層丨3 4。使用中間殼 層134使外部透鏡材料之選擇基本上與内部透鏡材料無 關。 圖2 7 §兒明外部透鏡1 3 8可如何形成於中間殼層i 3 4或内部 透鏡132之任何部分上。 圖28說明將外部透鏡142直接形成於内部透鏡144材料 上。 圖2 9說明成型於内部透鏡丨3 2上之另一形狀之侧發射透 鏡145。透鏡145可在沒有任何内部透鏡之情況下直接成型 於LED晶粒10上。 圖30說明各殼層146、147及148含有諸如紅色磷光體、 綠色磷光體及藍色磷光體之不同磷光體材料之LED。led 晶粒1 0可發射U V。磷光體微粒之間的空隙可使u v穿過内 殼層以激發外殼層中之鱗光體。或者,僅使用紅色及綠色 129413.doc •19- 200901514 磷光體殼層,且LED晶粒10發射藍光。紅光、綠光及藍光 、且《產生白光。可調整殼層之厚度、鱗光體微粒之密度 及鱗光體色彩之次序以獲得所要之光。可使用任何形狀之 透鏡。 圖31說明使用在支撐結構12本身上之模具圖案149。藉 由於支撐結構12上成型圖案、使用類似於圖丨中所示方法 之方法、或使用金屬化過程或使用另一合適過程來形成高 折射率材料(例如聚合物)或反射材料(例如,鋁或銀)。隨 後將模具圖案149用作形成透鏡150之另一材料之模具。在 一實施例中,透鏡150材料為液體(例如,聚矽氧),其沈積 於形成於支撐結構12上之模具中,隨後固化。隨後可將表 面平坦化。所得透鏡藉由反射/折射碰撞於側壁(如反射杯) 上之光而準直光。 圖32說明成型之透鏡22,其具有圍繞其側面濺鍍以反射 由led ίο發射之光的金屬151。反射光藉由lEE) 1〇散射且 最終經由頂部開口發射。金屬15丨可為任何反射材料,諸 如銘或銀。可替代地在透鏡22之頂部濺鍍金屬以產生側面 發圖案。可將透鏡22製造成任何形狀以產生所要光發射圖 案。 圖33為具有LCD螢幕1 54之液晶顯示器(LCD)l 52之側視 圖’其具有可控制RGB像素、漫射體156及背光158以用於 混合來自紅色、綠色及藍色LED 160之光以產生白光。背 光1 5 8為漫射反射箱。led 1 60具有使用上述技術中之任一 者製成之側發射透鏡。 129413.doc •20- 200901514 圖34為具有用以在指定視角内增亮影像之前透鏡“斗, 一組紅色、綠色及藍色LED 166,用以調變及聚焦RGB光 以產生彩色τν圖像之調變器/光學器件17〇以及反射器172 之背面投影電視162之側視圖。調變器可為可控制鏡面的 一陣列、LCD面板或任何其他合適裝置。LED 166具有使 用上述技術中之任一者製成之準直透鏡。 如上所述,可設計一級透鏡或二級透鏡以產生側發射圖 案。當意欲混合來自多個LED之光時,諸如當來自多個 LED之光用以產生用於LCD面板之均勻背光或用以裝飾性 照明或其它用途時’該側發射圖案尤其適用。 如圖35中所示,安裝於背面182上之不具有透鏡或僅具 有半球形透鏡之LED 180通常以朗伯圖案ι83發光。LED 1 80之陣列说明漫射螢幕! 84之背側。螢幕i 84可為圖33之 LCD背光中之漫射體156。亦顯示各LED之漫射亮度輪廓 185及其半高全寬(FWHM)。除非使LED置放足夠接近,否 則在螢幕184之前的總體光輸出將具有明顯的亮點。因 此,該背光需要相對高密度之LED,從而導致背光昂貴。 申請人已發明顯示於圖36-38中之寬發射透鏡,其尤其 適用於背光。在圖36中,顯示具有寬發射透鏡之lED 188 安裝於背面190上。如圖37中所示,各LED晶粒之峰值光 發射(1峰)發生在偏離中心軸(法線)50-80度的範圍内。介於 70-80度之間的範圍為較佳的。設計透鏡以使得沿中心軸 之光發射(10)為峰值發射之5%-33%。因此,與圖35中之亮 度輪廓1 85相比,各LED之亮度輪廓192更展開。因此,圖 129413.doc 21 · 200901514 36之背光中之LED 188的間距可大於圖35中之LED 18〇的 間距,同時達成來自漫射螢幕184的相同光輸出均勻性。 此導致背光較便宜。 亮度輪廓應不具有類似通常出現在漏斗狀透鏡之中心尖 端處之急劇過渡。 中心軸強度對50-80度峰值強度之最佳比視應用而定, 諸如獲得背光之指定亮度所需之LED間距。峰值強度至少 三倍於沿中心軸之強度,且在圖37之實施例中該比率在4_ € 8之間。 圖38為具有上述特徵之寬發射透鏡之—實施例之橫截面 圖。如參看圖1-6所述,LED晶粒194安裝於由陶瓷、石夕或 其他材料製成之基板或次載具196上,且如參看圖^所 述,第一透鏡198成型於LED晶粒194上。可將多個晶粒安 裝於單個大的次載具上。可用任何合適材料(諸如聚矽氧) 形成透鏡198。 Q 隨後分開次載具196且隨後藉由焊料回流技術或其他合 適技術將其安裝於背面1 90 (PCB)上。 預成型二級透鏡202以具有所要之寬發射特徵。二級透 . 鏡可為射出成型的或機械加工之塑膠或其他材料。該等材 - 料包括COC、COP、PMMA、環氧樹脂、聚矽氧、玻璃或 任何其他合適材料。隨後安裝二級透鏡2〇2以上覆第一透 鏡198 ’且接觸用於支擇之背面19G。空氣間隙204(或其他 低折射率材料間隙)產生使光彎曲至側面之内部折射界 面。二級透鏡202之外表面與g氣的界面進—步使光彎曲 1294I3.doc -22- 200901514 以在50-80度内獲得峰值強度。二級透鏡2〇2可直接接觸第 一透鏡198 ;然而二級透鏡202之形狀將不得不變化以獲得 相同之寬發射圖案。 在另—實施例中,二級透鏡2〇2與次載具196而非背面 190接觸且藉由次載具196支撐。 可用黏著劑(諸如環氧樹脂)將二級透鏡202固定至背面 或次載具,或可用卡扣(snap-tab)連接來附著。 與相對於背面固定二級透鏡202相比,藉由相對於次載 具固定二級透鏡202可達成對光發射之稍微較佳的控制, 因為在背面上LED及第一透鏡198之高度可隨安裝參數而 略微變化。 具有非球面半球内部氣隙之非球面二級透鏡2〇2為易於 成型之簡單設計。透鏡202在接近背面190處被底切以在底 切表面處向上反射光,以便光不向下朝背面1 90發射。此 避免光圈且增加背光之光輸出。 圖39顯示圖38之LED之光強度對角度之相對關係。峄值 強度約在72度,且沿中心軸之強度約為峰值強度之1 〇〇/0。 在另一實施例中,二級透鏡202之表面含有如參看圖 1 9、2 1及22所述之微觀結構,其進一步折射光以獲得所要 之發射圖案。 圖40為具有透鏡206的LED 194之橫截面圖,該透鏡206 具有全内反射(TIR)部分208。TIR部分208呈漏斗狀。TIR 部分208導致大多數向上發射之光在内部反射且經由側面 部分2 1 〇發射。該設計適用於減小沿中心軸之強度,同時 129413.doc -23 - 200901514 仍提供在50-80度内的岭值強度及在♦值強度之5-33 %之間 的沿中心軸之強度。可將任一透鏡實施例用於圖3 3之背 光。 圖3 8及40及其他圖中之二級透鏡亦可用於不具有成型之 第一透鏡之LED晶粒上。然而’使用成型之第一透鏡對於 保護LED較佳。二級透鏡之直徑通常介於4_1〇 mm之間。 圖41A至41E說明用於包覆成型陶瓷磷光板且使包覆成 型之板與LED晶粒連接之步驟。因為可仔細控制鱗光板厚 度(例如’ 50-300微米)及磷光體濃度,故可製備磷光板以 具有精確特徵。當磷光體藉由藍光(例如,440 nm-460 nm) 激發時’磷光體發射較長波長之光。當磷光板附著於藍色 LED上時,一定比例之藍光穿過板且該藍光與由磷光體產 生之光混合。 一種形成一片陶瓷磷光體之方式為使用熱及壓力燒結磷 光體粉末顆粒。藍色led光穿過板之百分比視磷光體之密 度及板之厚度而定’可將其準確控制。另一種形成一薄片 麟光體之方式為將磷光體漿料形成為薄片且隨後乾燥該漿 料 Gerd Mueller 等人之名為 Luminescent Ceramic for a Light Emitting Diode的美國專利公開案20050269582中描 述形成該等陶瓷磷光板’其以引用的方式併入本文中。 配合藍色LED使用之常用磷光體為可購得之YAG:Ce磷光 體(摻雜有約2%之鈽的釔鋁石榴石)。 圖4 1A說明使用可易於用力或用溶劑來釋放之任何合適 黏著劑來暫時安裝於背板212上之陶瓷磷光板晶圓211。背 129413.doc -24- 200901514 板212可具有鐵氟龍(Teflon)塗層以防止在隨後步驟中黏附 固化之聚石夕氧。晶圓通常為矩形但可為任何形狀。隨後將 晶圓鋸開以形成用於數百LED之磷光板。在此實例中,晶 圓211為50-300微米厚度之yag磷光體,當用來自藍色Led 之藍光激發時其發射綠黃光。一般認為所得白光刺目,因 為其具有间色溫(例如’ 4 0 0 0 - 6 0 0 0 K )。如下所述,將紅色 磷光體用於降低色溫,此通常被稱為產生較温暖之白光。 在圖41B中,用含有之紅色磷光體微粒216之液體聚矽氧 215填充模具214中之凹槽213。習知非黏著釋放薄膜(未圖 示)共形地塗佈模具且隨後使成型之聚矽氧可被移除而無 須顯著拖拉。可使用任何類型之自動液體分配器以分配聚 石夕氧/磷光體混合物。紅色磷光體之實例包括熟知之 BaSSN、CaS及e-CaS。紅色磷光體微粒之最佳密度及凹槽 213之形狀藉由所要之由紅色磷光體提供之色溫之降低來 確定。若想要獲得某一色溫’則亦可使諸如YAG、綠色、 橘汽、藍色專之其他攝光體微粒在聚珍氧215中。在一實 施例中’所用之聚矽氧215使得在固化之後相對軟以便在 操作LED結構期間在LED及所得磷光板上存在極少應力。 在另一實施例中,聚矽氧21 5與隨後用以形成外部透鏡之 I石夕氧相同或等效。 隨後將背板2 12及模具214置於一起以將磷光體晶圓211 浸入聚矽氧215中。使背板212與模具214夾緊,在結構周 圍產生真空且使聚矽氧215受壓縮。在此包覆成型步驟期 間排出液體聚石夕氧中之任何氣泡。隨後藉由加熱或uv固 129413.doc -25- 200901514 化♦矽氧2 1 5。隨後在釋放薄膜之輔助下,分開背板2丨2及 模具214。 隨後將所得之成型磷光體晶圓鋸開以形成個別之成型磷 光板,其中各板約為LED之尺寸。載有磷光體之聚矽氧於 磷光板上形成透鏡。在一實施例中,在鋸切過程期間,成 型之磷光體晶圓保持在背板212上且鋸條僅切割晶圓。此 使板易於由自動取置機拾取及置放。在另一實施例中,自 背板212移除成型之晶圓,隨後鋸開。 在圖41C中,自動取置機械臂自背板212移除每一成型之 磷光板218(具有載有磷光體之聚矽氧221之YAG板22〇),且 將成型之磷光板218黏著於安裝於次載具226(在此階段為 曰曰圓)上之藍色LED 224之上表面上。次載具22 6可含有在 類似於圖4中所示之陣列之二維陣列中的數百藍色led 224。次載具226通常為陶瓷的且含有用於各lED以連接至 電源之金屬迹線及電極。可藉由低熔點之玻璃、聚矽氧、 環氧樹脂、其他透明黏著劑或熱及壓力使磷光板218黏著 於 LED 224上。 在卩边後將詳細敍述之實施例中,成型之凹槽213之形 狀由電腦模型化來確定以補償由LED/板組合發射之光的色 溫對角度之相對關係的不均勻性。 在圖41D中,澄清聚矽氧透鏡234成型於LED 224及成型 之磷光板218上以密封整個結構。參看圖丨_4及其他圖所述 之過程可用以形成外部透鏡234。成型之外部透鏡234改良 led之光提取,獲得所要之光發射圖案且防止磷光板 129413.doc -26- 200901514 分層。 在另一實施例中’與載有填光體之聚矽氧221相比外部 透鏡234較硬。此產生用於保護之機械上堅固之外部透鏡 以及抵抗塵粒之光滑外表面,同時減小對於led 句之 應力。 隨後切割次載具226以分離LED結構。以上實例中之led 發射溫暖白光’諸如在3000-4000 κ内。任何其他碟光體 可用於磷光板及聚矽氧中之磷光體。 • 在測試之後可藉由根據其色彩特徵重新劃分(binning)$ 型之填光板218來進一步控制色溫。隨後測試次載具226上 之LED 224且根據其色彩特徵將其分類。隨後為特定led 選擇重新劃分之成型之攝光板21 8以獲得目標色溫。 圖41E說明附著於LED 224之包覆成型之磷光板218之另 一實施例。在圖4 1E中,使用聚矽氧或加熱將成型之磷光 板218附著於LED 224上,聚矽氧側在下。 除在成型之前切割磷光板外’圖42A至42E類似於圖41A 至41E。首先鋸開或斷開磷光體薄板以產生與激發led約 同一尺寸之填光板。 圖42A說明使用可易於用力或用溶劑來釋放之任何合適 黏著劑而暫時安裝於背板222上之陶瓷磷光板228之二維陣 列。背板222及磷光板之特徵可與圖41A_41E中者相同。 在圖42B中,用含有紅色磷光體微粒232之液體聚矽氧 231填充模具230中之凹槽229。習知非黏著釋放薄膜(未圖 示)共形地塗佈模具且隨後使成型之聚矽氧可被移除而無 129413.doc -27· 200901514 須顯著拖拉。磷光體、聚矽氧及模具之特徵類似於以上所 述之彼等特徵。 一 Ik後將老板222及模具230置於一起以將板228浸入聚矽 氧231中。使背板222與模具23〇夾緊,圍繞結構產生真空 且使聚矽氧23 1文壓縮。隨後藉由加熱或uv固化聚矽氧 231。隨後在釋放薄膜輔助下分開背板222及模具23〇。 在圖42C中,自動取置機械臂自背板222移除每一成型之 板234,且將成型之板234黏著於安裝於次載具晶圓2刊上 之藍色LED 236之上表面上。次载具238可在類似於圖4中 所示之陣列之二維陣列中含有數百藍色LED 236。次載具 238通常為陶瓷的且含有用於各LED以連接至電源之金屬 迹線及電極。可藉由低熔點玻璃、聚矽氧、環氧樹脂、其 他透明黏著劑或熱及壓力使磷光板228黏著於LED 236上。 在一隨後將詳細敍述之實施例中,成型之凹槽229之形 狀藉由電腦模型化來確定以補償由LED/板組合發射之光的 色溫對角度的相對關係之不均勻性。 在圖42D中,澄清聚矽氧透鏡244成型於led 236及成型 之板234上以密封整個結構。參看圖丨_4及其他圖所述之過 程可用以形成外部透鏡244。
隨後切割次载具238以分離LED結構。以上實例中之LED 發射溫暖白光,諸如在3〇〇〇_4〇〇〇〖内。任何其他磷光體 可用於磷光板及聚矽氧中之磷光體。重新劃分及匹配之優 勢參看圖41A-41E予以描述。 圖42E說明附著於led晶粒之包覆成型之磷光板23 4之另 129413.doc -28- 200901514 一實施例。在圖42E中,使用聚矽氧或加熱將成型之板234 附著於LED 236,透鏡側在下。為簡化取置過程,當成型 之板仍在模具230中時,背板222(圖42B)可自成型之板釋 放。隨後取置機械臂附著至曝露之板上,自模具23〇移除 成型之板,且將其置放於LED 236上。 在圖41A-E及42A-E中,第一成型步驟僅僅覆蓋磷光 板。圖43 A至43D顯示第一成型步驟亦密封LED之過程。 在圖43A中,將磷光板228(例如,YAG)附著於次載具 23 8上之LED晶粒23 6上。 在圖43B中,用含有紅色磷光體微粒254之液體聚石夕氧 252填充板具250中之凹槽248。如上所述,亦可使用苴他 磷光體。將次載具238及模具250置於一起,且加熱聚妙氧 252以使其固化。由於上述原因所得聚矽氧可相對軟,或 可相同或類似於用以形成外部透鏡之聚矽氧。 在圖43C中,分開次載具238及模具250以致紅色碟光體 透鏡258密封各LED及鱗光板,從而產生溫暖白光。 在圖43D中,使用本文所述之成型過程將硬聚矽氧透鏡 260成型於各LED上,以密封及保護整個LED結構。如所有 實施例中’外部透鏡260可藉由模具成形以產生諸如朗 伯、側發射、準直等之幾乎任何光發射圖案。 圖44A至44C說明使用成型過程以產生更均勻之色溫對 視角相對關係。 在圖44A中,YAG磷光體262粉末共形地塗佈LED 236,產 生平坦磷光體表面。用磷光體共形地塗佈LED之一種方式為 129413.doc -29- 200901514 電泳沈積。Dave C〇llins等人之名為"叫吨扪如❶沖⑽比比 Produce a Conformally Coated Phosphor-Converted Light Emitting Semiconductor”的美國專利第6,576,488號中描述電 泳沈積,其以引用的方式併入本文中。當磷光體為諸如圖 43A中所示之板時,圖44B及44C之過程亦適用。圖44B及 44C之過程亦適用於任何需要色溫對角度的相對關係更均 勻的L E D結構。 圖44A中所不之色溫曲線圖表明與在其他視角處相比, 在〇/〇視角處塗佈磷光體之LED之色温較冷(較高cct或較 藍)。此係因為當垂直於表面移動時藍光穿過磷光體移動 最短之距離。結果,當自不同角度觀察led時,白光改變 色彩。儘管所示之色溫範圍為3〇〇〇〖至35〇〇 κ,但視特定 磷光體及塗層之厚度而定,溫度可較高(例如,高達6000 Κ)或較低。 很難準確形成厚度可變化m在所有角度藍光穿過填光 體移動相同距離之磷光體塗層。 為補償此色彩對角度的相對關係之不均勻性,使用含有 句勻刀布之補償填光體之成型透鏡。在一實例中, 使^色磷光體分散於類似於圖4 3 B之模具2 5 G之模具中之液 A夕氧中模具之尺寸藉由基於待校正之LED之實際色 溫對角度之特徵的電腦模型化來確定。一般而言,模具為 凸狀的,#中精確寬度、深度、曲率及磷光體密度藉由電 =型化來心。將具有構光體塗層之咖置放於液體聚 , 使聚矽氧固化。隨後自模具移除具有成型透鏡 I29413.doc •30· 200901514 之 LED。 圖44B說明含有紅色磷光體之補償成型透鏡264之一實 例。視所要之色溫而定,可使用其他補償鱗光體。如色溫 對角度之曲線圖所示,藉由來自紅色磷光體之添加的紅色 成刀來降低平均溫度,且溫差自· κ(自圖拟)降低至 25〇 K ’攸而產生更均勻的色溫對角度的相對關係。透鏡 264較佳相對軟以減少對led之應力。 在圖44C中’使用先前所述之技術使硬聚矽氧透鏡加成 型於色彩補償透鏡264上。 圖45A說明不具有平坦磷光體層之LED 236,其中定製 成形模具以形成一改良色溫對角度的相對關係之均勻性的 載有碌光體之透鏡272。電腦模型化用以基於LED之色彩 對角度之相對關係來確定模具之最佳形狀及麟光體密度。 一般而言,透鏡272之形狀導致藍光在大範圍角度内穿過 透鏡之大約相同厚度。與圖45A中所示者相比,透鏡之相 對尺寸更A。透鏡272中之嶙光體可為YAG及紅色或任何 其他磷光體之組合。透鏡中之磷光體分布大體上均勾。亦 可使用多個重疊之成型透鏡以獲得所需色彩特徵。 隨後於較軟補償透鏡272上成型硬外部透鏡276。透鏡 276可為澄清的或可含有碌光體。 在圖45B中,内部成型之透鏡272含有yag磷光體,中間 成型透鏡277含有紅色碟光體且硬外部透鏡276不含有碟光 體。可成形透鏡272及277兩者以提供大體上均勻之色溫對 角度的相對關係。亦可使用其他類型之碌光體及額外的载 129413.doc -31 - 200901514 有磷光體之透鏡。在某些情況下,藉由不將所有磷光體混 合於單個透鏡中來提供對色彩及色溫對角度的相對關係之 較佳控制。澄清外部透鏡大體上增加光提取。 圖46A至46D說明在LED晶粒及諸如瞬變電壓抑制器 (TVS)或光偵測器之另一類型之半導體晶片上的成型透 鏡。 圖46A為顯示LED 282及在LED 282之電源引線之間連接 之TVS晶片284之一部分次載具280的俯視圖。不顯示次載 具280上之金屬迹線。在電壓湧浪下,諸如由於靜電放電 (ESD),TVS晶片284中之電路將瞬變電壓短接至接地端以 繞過LED 2 82。否則,可能損害LED 2 82。TVS電路係熟知 的。就申請者所知,先前技術之TVS電路不由一部分用於 LED之透鏡密封。圖46A中所示之次載具280為其上安裝多 對LED及TVS晶粒之晶圓之一部分。隨後將次載具晶圓鋸 開以分離LED/TVS對。 圖46B為次載具280之側視圖。類似於圖43B及其他圖中 所示之模具的模具具有用含有磷光體顆粒之液體聚矽氧填 充之凹槽。使次載具晶圓及模具置於一起以致各LED/TVS 對處在單一凹槽中之聚矽氧内,且隨後使聚矽氧固化。隨 後將次載具晶圓與模具分開,且得到圖46C之結構。成型 之磷光體透鏡286密封兩晶片。所用之磷光體之類型、磷 光體之密度及透鏡286之形狀藉由所要之色溫特徵來確 定。在一實施例中,透鏡286中之磷光體為當藉由藍色 LED 282激發時產生溫暖白光之YAG及紅色磷光體之混合 129413.doc -32- 200901514 物。
如圖46D中所示,進行類似於先前所示過程之第二包覆 成型過程以在成型之磷光體透鏡286上形成澄清聚矽氧透 鏡2 8 8。如同另一實施例,較佳地’與外部透鏡2 8 8相比内 部透鏡286較軟。使外部透鏡288成形以提供所要之光折射 以獲得幾乎任何發射圖案以及亦完全密封晶片。TVS晶片 284上之外部透鏡288的部分對LED之光發射圖案具有極小 之作用。在實際實施例中,與圖46D中所示相比,相對於 外部透鏡之高度的兩個晶片之厚度通常更小。舉例而言, LED 282之厚度可為120微米(移除其生長基板),成型之磷 光體透鏡286可具有在LED上1〇〇微米之厚度且外部透鏡 288可具有在成型之磷光體透鏡2 86上1〇〇〇微米之厚度。 成型之Ή光體透鏡2 8 6之占地面積不必類似半球形外部 透鏡之占地面積為圓形的。磷光體透鏡286之占地面積可 為直線的以僅覆蓋LED及TVS對。 如在所有實施例中,外部透鏡可含有一或多種磷光體類 型以獲得任何色溫,諸如溫暖白色。 儘管可簡單i也於内㉛聚石夕氧透鏡上成型夕卜冑Μ氧透 鏡,但已發現對内部透鏡之中間電衆處理增加兩個透鏡之 間的黏著性。電漿處理略微偏彳透鏡且使其粗链。使内部 透鏡經受200瓦特之電衆功率幾分鐘(例如,μ分鐘)就足 以確保兩個㈣氧透鏡之間的黏著性大於外部透鏡對成型 之釋放薄膜之黏著性。電漿功率 水刀年可為約200-600瓦特。電 漿氣體可為任何合適惰性氣體,諾‘ & 居如虱氣,且可在可產生 129413.doc -33- 200901514 電漿之任何合適腔室中進行該過程。圖43C說明可選之電 漿289步驟。可在其中形成兩個或兩個以上包覆成型之透 鏡之任何實施例中進行電漿步驟。由於與載有磷光體之聚 矽氧之折射率相比澄清聚矽氧透鏡折射率較低,已顯示提 供澄清聚矽氧透鏡作為外部透鏡將光輸出功率增加24%。 在圖46A-46D中,LED可為任何色彩,諸如藍色、青 色、綠色等,且可包覆成型多個LED與非LED晶片。 圖47 A至47C說明在不同色彩之多個LED上成型單個透 鏡。圖47A為含有紅色LED 292、綠色LED 293及藍色LED 294之次载具290的一部分之俯視圖。未顯示金屬迹線。次 載具晶圓含有許多該等群組,視RGB LED之相對亮度級而 定,各群組產生具有任何所要色溫之白光。 不限制每一色彩之配置、色彩及比率。舉例而言’ led 群組亦可包括白色LED,或群組可單獨包括2-3個紅色LED 或連同一或多個綠色及藍色LED,或群組可為2個白色LED 加上一玻J0色LED。 在圖47B中,模具296具有由液體聚矽氧298填充之凹槽 297以在次載具晶圓上之各組RGB LED上形成單個透鏡。 夾緊次載具290及模具296,且使聚矽氧固化。 在圖47C中,隨後分開次載具晶圓及模具296以於LED群 組上形成成型之透鏡300。在一實施例中,透鏡300含有一 或多個磷光體。隨後分離次載具晶圓,或整個次載具晶圓 可形成LED顯示單元。可藉由單個包覆成型之透鏡密封任 意數目及任意色彩之LED。 129413.doc -34- 200901514 圖48A至48C說明在LED上包覆成型透鏡且隨後將準直透 鏡附著於包覆成型之透鏡之平坦部分上。
在圖48A中,已於次載具晶圓上31〇安裝—陣列的led 312。使用金球314將各LED晶粒之底部電極超音熔接於次 載具上之金屬接觸墊。亦可使用其他結合技術。隨後夹緊 次載具晶圓310及模具,其中使各LED處於先前用液體聚 矽乳填充之模具凹槽内。凹槽為圖48A中所示之成型聚矽 氧透鏡316之形狀。隨後固化聚矽氧。隨後使次載具晶圓 3 1 〇與模具分開。各成型之透鏡3 1 6密封LED且具有平坦頂 部0 隨後藉由聚矽氧膠3 19、環氧樹脂或藉由其它方式使預 成型之費涅透鏡318附著於成型之透鏡316之平坦部分。費 涅透鏡318具有準直光之極精細特徵。費涅透鏡不能藉由 模〃中之圖案直接在成型透鏡316中形成之原因為釋放薄 膜(其於模具上形成50微米的層)不能貼合模具中的該等精 細圖案。若模具由非黏著物質形成且不需要釋放層,則可 於透鏡中直接成型費淫透鏡。單獨的費淫透鏡318可藉由 衝壓軟化之塑膠材料或使用其他方法形成。在一實施例 中’費涅透鏡318具有圓形占地面積。 成型之透鏡316之壁部分320環繞各費淫透鏡318且為與 費涅透鏡318約相同之高度。此壁部分32〇具有向上反射自 費涅透鏡318之側面發射之任何光的成角側面。另外,壁 部分320保護費涅透鏡318免受撞擊。提供具有壁部分之成 型之透鏡係可選的,且成型之透鏡可為在頂部支撐另一透 1294l3.doc -35- 200901514 鏡之任何形狀。 隨後將次載具晶圓3 1 0沿鋸線322鋸開以分離準直光源。 在一實施例中,將圖48A-C之光源用作圖16之行動電話相 機之小型閃光燈。可使用其他種類準直透鏡。 成型之透鏡亦可含有磷光體,如圖48B中所示。在圖 48B中,LED發射藍光,且當成型透鏡33〇時將不同類型之 磷光體326、328分散於液體聚矽氧中。在一實施例中,磷 光體向藍光提供至少紅色及綠色成分以產生白光。在一實 施例中’磷光體包括YAG磷光體及紅色磷光體,以獲得溫 暖白光。 圖48C說明其中用磷光體334(諸如YAG)共形地塗佈藍色 LED 3 12之實施例。可使用電泳進行塗佈。成型之聚矽氧 透鏡336含有紅色鱗光體338以產生溫暖白光。 圖49A及49B說明使用聚矽氧凝膠底部填充劑來填充 AlInGaN LED晶粒下之空隙’其中隨後藉由硬外部透鏡密 封LED。在圖49八中,將LED 34〇(生長基板(例如,藍寶 石)朝上)安裝於次載具342上以便LED 340上之金屬接觸區 344與次載具342上之金屬迹線346結合。金屬迹線端接於 人載具3 4 2底β卩之導線結合塾或表面安裝墊中。隨後將底 部填充材料348(諸如聚矽氧凝膠)注入LED 34〇下以填充在 LED 340與次載具342之間產生之空隙。隨後使凝膠固化。 固化之减膠保持相對軟。 隨後將準分子雷射光束應用於透明生長基板,該光束加 熱GaN LED表面且分離在表面的GaN以產生鎵及氮氣。氮 129413.doc -36- 200901514 氣膨脹以將藍寶石基板抬離GaN LED,且移除藍寶石基 板。在此過程期間產生巨大向下壓力,且底部填充劑348 機械地支撐薄LED層以防止LED破壞。底部填充劑348亦有 助於在LED操作期間自LED至次載具導熱。
隨後使用本文所述之技術在LED上成型澄清或載有碟光 體之硬聚矽氧透鏡350。底部填充劑348防止模具中之液體 外部透鏡材料進入空隙。此減小操作期間LED上之熱應 力,該應力原本可將LED抬離次載具。可最佳化底部填充 劑以行使其功能而不擔憂其光學特性。 圖49B說明監寶石生長基板354保留於LED層上之實施 例。可沿LED 340及基板354之側面沈積底部填充劑356以 確保填充所有空隙’且減少t在操作期間加熱或冷卻㈣ 時LED/基板與硬外部成型透鏡358之間的壓力。此外,若 底。Μ真充^丨不透a月’則沿#彳面之底部填充劑阻斷側發射, 此在磷光體層位於基板頂部的情況下為有利的。如在所有 實施例中,外部透鏡可載有磷光體。 在本文所述之所有實施财,可㈣底部填充聚石夕氧凝 膠。此外,可使用發射UV光之LED替代本文所述之藍色 LED’且可使藍色磷光體分散於成型之透鏡中。 雖然已顯示及描述本發明之特定實施例, 項技術者顯而易見,可在1 此 不背離本發明,因此,装中進行變化及修改而 内。可内的所有该等變化及修改涵蓋於其範· 129413.doc -37- 200901514 【圖式簡單說明】 圖1為安裝於支撐結構(諸如次載具)上之四個led晶粒及 用於形成環繞各LED晶粒之透鏡的模具之側視圖。 圖為插入模具中的充滿液體透鏡材料之凹槽之[ED晶 粒之側視圖。 圖3為在液體已固化,從而產生密封各led晶粒之透鏡 之後自模具移除之LED晶粒之側視圖。 圖4為次載具或電路板上之一陣列的晶粒之透視 圖,其中在各LED晶粒上形成了成型之透鏡。 圖5為女裝於次載具上之覆晶LED晶粒之近視側視圖, 該次載具又安裝於電路板上,且其中成型之透鏡形成於 L E D晶粒上。 圖6為女灰於次載具上之非覆晶LED晶粒之近視側視 圖,該次載具又安裝於電路板上,其中導線將LED晶粒上 之11及!)金屬與電路板上之引線電連接,且其甲成型之透鏡 形成於LED晶粒上。 圖7、8、9、10、及11為其上形成有不同透鏡之led晶 粒之橫截面圖。 圖1 2為使用本發明之技術成型於LED晶粒上之側發射透 鏡之橫截面圖。 圖1 3為使用本發明之技術成型於LED晶粒上之準直透鏡 之橫截面圖。 圖14為附著於已使用本發明之技術成型於LED晶粒上之 朗伯(Iambertian)透鏡上之預成型之側發射透鏡之橫截面 129413.doc -38- 200901514 圖。 、圖15為使用圖14iLED及側發射透鏡之用於液晶顯示器 或其他種類顯示器之背光的橫截面圖。 圖16為具備將具有成型透鏡之LED用作閃光燈之相機的 行動電話之透視圖。 圖17及18為兩種類型之成型透鏡之橫截面圖。儘管本發 明亦可應用於非對稱透鏡,但所有所示透鏡關於中心軸對 稱。 圖19-22說明用於獲得所要發射圖案之内部透鏡或外殼 層透鏡上之表面特徵。 圖23說明使用高半球透鏡以獲得準直發射圖案。 圖2 4及2 5說明使用硬外部透鏡及軟内部透鏡來限制對導 線結合造成的應力。 圖26-28說明使用形成於各種類型内部或中間透鏡上之 外部透鏡以獲得側發射圖案。 圖2 9說明另一側發射之成型透鏡。 圖30說明使用各含有不同磷光體之成型殼層。 圖3 1說明於支撐基板上形成模具部分以形成成型透鏡。 圖32說明在一部分透鏡上沈積金屬反射器以獲得所要之 發射圖案。 圖33為在背光中使用具有側發射透鏡之led之液晶顯示 器之側視圖。 圖34為使用具有準直透鏡之LED作為RGB光源之背面投 影TV之側視圖。 129413.doc -39- 200901514 圖35說明先前技術led發射圖案(朗伯)及其在螢幕上之 重疊亮度輪廓。 圖36說明使用本發明之透鏡的led之廣角發射圖案及其 在螢幕上之重疊亮度輪廓。 圖37顯示圖36中之LED的發射圖案之更多細節。 圖3 8為LED及根據本發明之一實施例之寬發射透鏡之橫 截面圖。
圖39為圖38之透鏡之光強度對角度之曲線圖。 圖40為LED及根據本發明之另一實施例之寬發射透鏡之 橫截面圖。 圖41A至41E說明包覆成型磷光體晶圓,隨後切割成型 之磷光體晶圓且使個別包覆成型之板與LED晶粒相連之步 圖42A至42E說明包覆成型磷光板且使包覆成型之板與 L E D晶粒相連之步驟。 圖43A至43D說明包覆成型具有磷光板之LED之步驟,其 中透鏡材料含有紅色磷光體以產生溫暖白光。 圖44A至44C說明具有平坦磷光體層之led,其中定製成 形核具以形成補償色莱彡剩· g ^ 又侧頂巴知對角度之不均勻性的載有磷光體之 透鏡。 圖45A及45B說明不具有平土磁伞 方卞坦忪光體層之LED,其中定製 成形模具以形成改良色彩斜备存+ α二 已办對角度之均勻性的載有磷光體之 透鏡。 瞬變電壓抑制器之另 圖46Α至46D說明在LED晶粒及諸如 129413.doc -40- 200901514 一類型之半導體晶片上成型透鏡。 圖47A至47C說明在不同色彩之多個LED上成型單個透 鏡。 圖48 A至48C說明在LED上成型透鏡且隨後將準直透鏡附 著於包覆成型之透鏡之平坦部分上。 圖49A及49B說明使用聚矽氧凝膠底部填充劑填充LED晶 粒下之空隙,其中隨後藉由硬外部透鏡密封LED。 在各圖中用相同數字標記之元件可相同或等效。 【主要元件符號說明】 10 LED晶粒· 12 支撐結構 14 模具 16 凹槽 18 薄膜 20 透鏡材料 22 透鏡 24 次載具 26 P接觸層 27 P金屬接觸區 28 P型層 30 光發射有效層 31 η金屬接觸區 32 η型層 34 金屬接觸區 129413.doc 200901514 f 1 36 次載具 38 導線 40 金屬引線 42 導線 44 金屬引線 45 電路板 60 磷光體 62 透鏡 64 内部透鏡 66 外部磷光體/聚矽氧殼層 68 外部透鏡 70 紅光磷光體殼層 72 綠光麟光體殼層 74 藍光磷光體殼層 76 聚矽氧殼層 78 聚矽氧殼層 80 聚矽氧殼層 84 側發射透鏡 86 準直透鏡 88 透鏡 90 側壁 92 漫射點 94 PMMA薄板 96 漫射體 129413.doc -42- 200901514 98 蜂巢式電話 100 彩色螢幕 102 小鍵盤 106 透鏡 108 圖案 110 圖案 112 費涅透鏡圖案 114 角錐體 116 錐狀圖案 118 高半球外部透鏡 124 透鏡 126 導線 128 外部透鏡 129 透鏡 130 外部透鏡 132 透鏡 134 中間殼層 136 外部透鏡 138 外部透鏡 142 外部透鏡 144 内部透鏡 145 側發射透鏡 146 殼層 147 殼層 129413.doc -43 200901514 148 殼層 149 圖案 150 透鏡 151 金屬 152 液晶顯不益' (LCD) 154 LCD螢幕 156 漫射體 158 背光 160 LED 162 背面投影電視 164 前透鏡 166 LED 170 調變器/光學器件 172 反射器 180 LED 182 背面 183 朗伯圖案 184 螢幕 185 明亮輪廓 188 LED 190 背面 192 明亮輪廓 194 LED晶粒 196 基板或次載具 129413.doc 44- 200901514 198 透鏡 202 透鏡 204 空氣間隙 206 透鏡 208 全内反射部分 210 側面部分 211 陶瓷磷光板晶圓 212 背板 213 凹槽 214 模具 215 液體聚矽氧 216 磷光體微粒 218 磷光板 220 YAG板 221 聚矽氧 222 背板 224 LED 226 次載具 228 磷光板 229 凹槽 230 模具 23 1 液體聚矽氧 232 磷光體微粒 234 透鏡/成型之板 129413.doc -45 200901514
236 LED 238 次載具 244 透鏡 248 凹槽 250 模具 252 聚矽氧 254 磷光體微粒 258 透鏡 260 透鏡 262 YAG磷光體 264 透鏡 268 透鏡 272 透鏡 276 透鏡 277 透鏡 280 次載具 282 LED 284 TVS晶片 286 透鏡 288 透鏡 289 電漿 290 次載具 292 LED 293 LED 129413.doc -46 200901514 294 LED 296 模具 297 凹槽 298 液體聚矽氧 300 透鏡 310 次載具晶圓 312 LED 314 金球 316 透鏡 318 費涅透鏡 319 聚矽氧膠 320 壁部分 322 鑛線 326 磷光體 328 磷光體 330 透鏡 334 填光體 336 聚矽氧透鏡 338 紅色磷光體 340 LED 342 次載具 344 金屬接觸區 346 金屬迹線 348 底部填充材料 129413.doc -47 200901514 350 透鏡 354 基板 356 底部填充劑 358 透鏡
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Claims (1)
- 200901514 十、申請專利範圍: 1. 一種用於形成一發光二極體(LED)結構之方法,其包 含: ’ 在一次載具上提供一發射藍光或uv光之[ED ; 提供一大體上平坦之碟光體層; 提供一具有對應於中間透鏡之凹槽之模具; 用一含有磷光體之液體透鏡材料填充該凹槽; 在該填充步驟之後,使至少該磷光體層浸入該模具中 > 之液體透鏡材料中; 固化該液體透鏡材料以在磷光體層上形成一载有磷光 體之透鏡;且 在該LED上提供該磷光體層。 2.如請求項1之方法,其中該磷光體層為在使至少該磷光 體層浸入該液體透鏡材料中之步驟前附著於該LED之一 磷光板,其中使至少該磷光體層浸入該液體透鏡材料中 之步驟包含使附著於LED之LED及磷光板浸入該液體透 鏡材料中以密封該LED及磷光板。 3·如請求項1之方法’其中該磷光體層為在至少使該磷光 體層浸入該液體透鏡材料中之步驟之後附著於該LED之 一鱗光板’其中在形成該載有磷光體之透鏡之後使含有 °亥碟光*體層之載有磷光體之透鏡附著於該LED。 士 求項3之方法’其中使含有該磷光板之載有填光體 之透鏡附著於該LED,而該磷光板與該LED相鄰。 如β求項3之方法,其中使含有該磷光板之载有磷光體 129413.doc 200901514 之t鏡附著於該LED,而該透鏡與該LED相鄰。 6.如明求項丄之方法’其進一步包含藉由使該載有磷光體 之透鏡及§亥LED浸入—模具凹槽中之液體透鏡材料中且 隨後固化該液體透鏡材料,以㈣載有碟光體之透鏡及 該led上成型一澄清透鏡。 7· 士 °月求項1之方法,其中該磷光體層含有YAG磷光體且 該載有磷光體之透鏡中之磷光體包含紅色磷光體。 8. 如叫求項1之方法,其中該磷光體層為一當浸入該液體 透鏡材料時附著於一背板之磷光板。 9. 如π求項1之方法,其進一步包含確定附著有該磷光體 層之LED的色溫對視角之相對關係、,且隨後成形該模具 凹槽以增加該色溫對視角之相對關係之均勾性。 1〇_如請求項1之方法,其中該磷光體層為一在使至少該磷 光體層饮入該液體透鏡材料中之步驟之前共形地塗佈該 LED之磷光體層。 11. 如請求項1之方法,其中來自該LED、該磷光體層及該載 有磷光體之透鏡之光的組合產生白光。 12. 如請求項1之方法,其中將該LED連同複數個相同之 安裝於一次載具上,其令使至少該磷光體層浸入至模具 中之液體透鏡材料中之步驟包含使該次載具上之所有 LED同時浸入一相關模具凹槽中之液體透鏡材料中。 13. —種發光二極體(LED)結構,其包含: 一在一次載具上的發射藍光或UV光之LED ; 一上覆該LED之大體上平坦之磷光體層; 129413.doc 200901514 一在該磷光體層上之成型之載有磷光體之透鏡;及 —成型於該LED及载有磷光體之透鏡上之澄清透鏡, 其不包含磷光體。 14.如請求項13之結構,其中該磷光體層為一附著於該led 之碌光板。 1 5 ·如清求項13之結構,其中該載有磷光體之透鏡附著於該 LED ’而該磷光體層與該LED相鄰。 (. 16, 如請求項13之結構,其中該磷光體層含有yag磷光體且 該载有磷光體之透鏡中之磷光體包含紅色磷光體。 17. 如請求項13之結構,其中與該磷光體層組合的該具 有—色溫對視角之相對關係,且其中成形該載有磷光體 之透鏡以增加該色溫對視角之相對關係之均勻性。 1 8.如明求項i 3之結構,其中該磷光體層為一共形地塗佈該 LED之嶙光體層。 19.如請求項U之結構,其中來自該LED、㈣光體層及該 載有嶙光體之透鏡之光的組合產生白光。 2〇. 一種用於形成一發光二極體(LED)結構之方法,苴勺 在次載具上提供一發射藍光或LJV光之lED ; ^由—過程在該咖上成型—載有磷光體之透鏡,該 提供一具有一對應於一中間透鏡之凹槽之模具; 用-含有-磷光體之液體透鏡材料填充該凹槽. 在該填充步驟之後,使該LED浸入 日’ 傾1丹平之液體透 129413.doc 200901514 鏡材料中;且 固化該液體透鏡材料以在該led上形成一載有鱗光 體之透鏡;且 在該載有磷光體之透鏡上成型一澄清透鏡。 21. 如請求項20之方法,其中該載有磷光體之透鏡為一含有 第一磷光體之第一載有磷光體透鏡,該方法進一步包含 在該第一載有磷光體之透鏡上成型第二載有磷光體透 鏡’該第二載有磷光體透鏡含有不同於該第一磷光體之 第二磷光體。 22. 如請求項21之方法,其進一步包含確定具有該第—載有 W光體之透鏡之LED的色溫對視角之相對關係,且隨後 成型該第二載有磷光體之透鏡以增加該色溫對視角之相 對關係之均勻性。 23. —種發光二極體(LED)結構,其包含: 一在一次載具上的發射藍光或UV光之led ; 在该LED上之含有第—磷光體之成型之第一載有磷 光體之透鏡; 一在該第一載有磷光體之透鏡上之含有第二磷光體之 成型之第二載有磷光體之透鏡; 在》亥第一載有鱗光體之透鏡上的成型之澄清透鏡, 其不包含磷光體。 24.如請求項23之結構,盆中嗲笛 弟一磷光體不同於該第二磷 无體。 25.如請求項23之結構 其中與該第一載有磷光體之透鏡組 129413.doc 200901514 合的《亥LED具有-色溫對視角之相對關係、,且其中成形 該第一載有磷光體之透鏡以增加該色溫對視角之相對關 係之均勻性。 26. —種發光二極體(LED)結構,其包含: 在人載具上之led以及安裝於該次載具上之一或 多個半導體晶粒;及 一成型於該LED及該一或多個半導體晶粒上之單個透 鏡。 27. 如請求項26之結構,其進一步包含覆蓋該led及該一或 多個半導體晶粒之成型载有磷光體之透鏡,其中該單個 透鏡成型於該載有磷光體之透鏡上。 28. 如明求項26之結構,其中該一或多個半導體晶粒包含— 或多個LED。 29. 如明求項26之結構,其中該一或多個半導體晶粒包含發 射不同色彩之複數個LED。 30. 如請求項26之結構,其中該一或多個半導體晶粒包含一 瞬變電壓抑制器。 3 1 ·如明求項26之結構,其中該一或多個半導體晶粒包含— 光偵測器。 32. 如請求項26之結構,其中該成型於該LED及該一或多個 半導體晶粒上之單個透鏡非對中心軸對稱。 33. 如請求項26之結構,其中該單個透鏡密封該及該— 或多個半導體晶粒。 34. —種發光二極體(LED)結構,其包含: 129413.doc 200901514 一安裝於一基板上之led ; 一成型於該LED上且密封該LED之第、条咏 ^ A Α <第-~透鏡,該透鏡 具有—大體上平坦之頂部;及 、-附著於該第-透鏡之大體上平坦之頂部之預製第二 透鏡。 35. 如請求項34之結構,其中該第二透鏡為—準直透鏡。 36. 如請求項34之結構,其中該第二透鏡為—費淫(二响 透鏡。 37·如請求項34之結構,其中該第—透鏡具有環繞該大體上 平坦之頂部之壁部分,以使得該等壁部分之—頂部與該 第二透鏡之一頂部大體上共面。 38. 如=求項37之結構,其中使該等壁部分成角度以將來自 該第二透鏡側面之光反射遠離該LED。 39. 如請求項34之結構,其中該第二透鏡之表面與該咖之 表面具有大約相同之尺寸。 40. 如β月求項34之結構,其中該第一透鏡含有鱗光體且來自 。亥LED之光激發該磷光體且與由該磷光體產生之光混 合。 41. 如請求項34之結構,其中該結構發射白光。 42. 如請求項41之結構,其中該結構為一相機中之閃光燈。 43. 如請求項34之結構,其中該第一透鏡包含聚矽氧。 44_ 一種用於形成一發光二極體(LED)結構之方法,其包 含: v、匕 將— led安裝於一次載具上,其中使該LED上之至少 129413.doc 200901514 電極結 一第一電極與該次載具之—表面上之至少一第二 合,在該LED與該次載具之表面之間存在一空隙; 用一底部填充材料填充該空隙; 提供一具有對應於透鏡之凹槽之模具 用一液體透鏡材料填充該凹槽; 在該填充步驟之後,使該LED及該底部填充材料浸入 該模具中之液體透鏡材料中,該底部填充劑阻止該液體 透鏡材料進入該空隙中;固化該液體透鏡材料以用—成型之透鏡密封該led及 底部填充材料;且 自s亥模具移除具有該成型之透鏡之LED。 45. 如明求項44之方法,其中_透明基板形成該LED之上表 面,其中將該底部填充材料之一部分安置於該LED之側 表面,包括該基板。 46. —種用於形成一發光二極體(LED)結構之方法,其包 含: 於一次載具上提供一 LED ; 提供一具有一第一凹槽之第一模具,該第一凹槽具有 對應於第一透鏡之形狀; 用一第一液體透鏡材料填充該第一凹槽; 在該填充步驟之後,使該LED浸入該第一模具中之第 一液體透鏡材料中; 固化該第一液體透鏡材料以於該LED上形成該第一透 鏡, 129413.doc 200901514 自該第模具移除具有該第一透鏡之該LED ; 電漿處理該第一透鏡; 提供一具有第·"凹槽之第二模具,肖第二凹槽具有對 應於第二透鏡之形狀; 用一第二液體透鏡材料填充該第二凹槽; 在亥填充S玄第二凹槽之步驟之後,使該lED及第一透 鏡浸人該第二模具中之該第二液體透鏡材料中; 固化該第二液體透鏡材料以於該led上形成該第二透 鏡,其中該電漿處理步驟增加該第一透鏡對該第二透鏡 之黏著性;且 自該第二模具移除具有該第一透鏡及第二透鏡之該 LED。 47. 如晴求項46之方法,其中該第一透鏡材料與該第二透鏡 材料相同。 48. 如凊求項46之方法,其中該第一透鏡含有磷光體。 49. 如請求項46之方法,其中電漿處理包含以大約2〇〇至6〇〇 瓦特電漿處理該第一透鏡以蝕刻該第一透鏡。 50. —種發光二極體(led)結構,其包含: 一在一次載具上之led ; 一在該LED上之成型之第一透鏡,其中該成型之第一 透鏡具有一電漿處理之外表面; 一直接形成於該第—透鏡上之成型之第二透鏡,其中 °亥第透鏡之3亥電衆處理之外表面增加該第一透鏡對續 第二透鏡之黏著性。 129413.doc
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- 2008-02-26 CN CN2008800062087A patent/CN101636851B/zh not_active Expired - Fee Related
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TWI710620B (zh) * | 2017-12-22 | 2020-11-21 | 美商亮銳公司 | 發光裝置、波長轉換層及用於製造發光裝置的方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2008104936A2 (en) | 2008-09-04 |
CN101636851B (zh) | 2011-12-21 |
US20110057205A1 (en) | 2011-03-10 |
KR20090127296A (ko) | 2009-12-10 |
US20080048200A1 (en) | 2008-02-28 |
WO2008104936A3 (en) | 2008-12-04 |
EP2115789A2 (en) | 2009-11-11 |
JP2010519757A (ja) | 2010-06-03 |
US7858408B2 (en) | 2010-12-28 |
CN101636851A (zh) | 2010-01-27 |
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