TWI645580B - 發光二極體覆晶晶粒及顯示器 - Google Patents

發光二極體覆晶晶粒及顯示器 Download PDF

Info

Publication number
TWI645580B
TWI645580B TW105125361A TW105125361A TWI645580B TW I645580 B TWI645580 B TW I645580B TW 105125361 A TW105125361 A TW 105125361A TW 105125361 A TW105125361 A TW 105125361A TW I645580 B TWI645580 B TW I645580B
Authority
TW
Taiwan
Prior art keywords
light
electrode
emitting diode
layer
type semiconductor
Prior art date
Application number
TW105125361A
Other languages
English (en)
Other versions
TW201810727A (zh
Inventor
沈佳輝
洪梓健
彭建忠
黃建翔
黃世晟
劉芝蓉
Original Assignee
榮創能源科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 榮創能源科技股份有限公司 filed Critical 榮創能源科技股份有限公司
Publication of TW201810727A publication Critical patent/TW201810727A/zh
Application granted granted Critical
Publication of TWI645580B publication Critical patent/TWI645580B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

一種發光二極體覆晶晶粒，其包括覆晶晶粒及結合於該覆晶晶粒的側面的散熱吸光層。另，本發明還提供一種應用所述發光二極體覆晶晶粒的顯示器。

Description

發光二極體覆晶晶粒及顯示器
本發明涉及一種發光二極體覆晶晶粒及應用該發光二極體覆晶晶粒的顯示器。
隨著LED產業不斷發展，覆晶式發光二極體以其封裝體積小、發光面積大等優勢使其正逐步替代常規發光二極體，而廣泛應用於LED照明產業。
覆晶式發光二極體的發光功率較高，發光時產生的熱量也較多，若散熱不良將會導致發光二極體產生的光的波長偏移，影響發光二極體的發光效果。
有鑑於此，有必要提供一種散熱效果較好的發光二極體覆晶晶粒，以解決上述問題。
另，還有必要提供一種應用上述發光二極體覆晶晶粒的顯示器。
一種發光二極體覆晶晶粒，其包括覆晶晶粒及結合於該覆晶晶粒的側面的散熱吸光層。
一種顯示器，其包括藍寶石基板、以陣列形式排布在該藍寶石基板上所述多個發光二極體覆晶晶粒、及用於將該多個發光二極體覆晶晶粒電性連接在一起的多個導線。
所述發光二極體覆晶晶粒包括設置在覆晶晶粒的側面的散熱吸光層，該散熱吸光層即可以吸收從覆晶晶粒側面出射的光，還可以將覆晶晶粒產生的熱量散發出去，如此可以提高覆晶晶粒的散熱，避免覆晶晶粒因散熱不良而造成的發出的光線波長偏移的現象，從而提高發光二極體覆晶晶粒發光品質。
100‧‧‧發光二極體覆晶晶粒
10‧‧‧覆晶晶粒
11‧‧‧基板
12‧‧‧磊晶層
121‧‧‧N型半導體層
1211‧‧‧第一表面
1212‧‧‧第二表面
122‧‧‧發光活性層
123‧‧‧P型半導體層
124‧‧‧凹槽
13‧‧‧電極層
131‧‧‧N電極
1311‧‧‧N電極片
1312‧‧‧凸塊
1313‧‧‧第一凸部
1314‧‧‧第二凸部
132‧‧‧P電極
1321‧‧‧P電極片
1322‧‧‧凸起
1323‧‧‧通孔
1324‧‧‧間隔槽
133‧‧‧絕緣層
1331‧‧‧第一絕緣部
1332‧‧‧第二絕緣部
1333‧‧‧第三絕緣部
1334‧‧‧卡槽
1335‧‧‧第四絕緣部
1336‧‧‧孔
14‧‧‧緩衝層
20‧‧‧散熱吸光層
200‧‧‧顯示器
201‧‧‧藍寶石基板
202‧‧‧導線
203‧‧‧電極片
圖1為本發明較佳實施例的發光二極體覆晶晶粒的截面示意圖。
圖2為本發明較佳實施例的顯示器的立體圖。
圖3為圖2所示的顯示器的俯視圖。
請結合參閱圖1，本發明較佳實施方式提供一種發光二極體覆晶晶粒100，其包括覆晶晶粒10及結合於該覆晶晶粒10側面的散熱吸光層20。該散熱吸光層20用於吸收從覆晶晶粒10的側面出射的光，並將覆晶晶粒10產生的熱量散發出去。
所述散熱吸光層20的材質為石墨、類鑽碳、矽膠等既具有吸光功能又具有散熱功能的材料。該散熱吸光層20可以避免覆晶晶粒10因散熱不良而造成的發出的光線波長偏移的現象，從而提高發光二極體覆晶晶粒100的發光品質。該散熱吸光層20藉由塗膠技術塗布在覆晶晶粒10的側面，如此，可以直接藉由該散熱吸光層實現覆晶晶粒10的封裝及固晶，減小封裝後的發光二極體覆晶晶粒100的體積，提高封裝精度，並精確控制散熱吸光層20對覆晶晶粒10的包覆，提高包覆精度。
所述覆晶晶粒10包括基板11、形成在該基板11一表面的磊晶層12、及與該磊晶層12電性連接的電極層13。
所述基板11為藍寶石基板。該藍寶石基板的透光性好，且堅固耐用。
所述磊晶層12包括設置在基板11上的N型半導體層121、設置在該N型半導體層121的遠離基板11的表面上的至少一發光活性層122、及設置在該發光活性層122的遠離N型半導體層121的表面上的P型半導體層123。
所述電極層13包括N電極131、P電極132、及位於該N電極131與P電極132之間的絕緣層133。該N電極131與所述N型半導體層121電性連接。該P電極132與所述P型半導體層123電性連接。該絕緣層133用於將N電極131及P電極132絕緣，以避免N電極131與P電極132之間發生短路。
所述P電極132結合於所述P型半導體層123的遠離所述發光活性層122的表面。該P電極132上形成有至少一通孔1323。
所述磊晶層12的遠離基板11的一側具有至少一凹槽124。每一凹槽124的開口與一通孔1323對應。該凹槽124貫穿所述P型半導體層123、發光活性層122，且該凹槽124的底面為所述N型半導體層121。
所述N型半導體層121具有一鄰近所述發光活性層122的第一表面1211及與該第一表面相背的第二表面1212。在至少一實施例中，所述凹槽124的底面為該第一表面1211，即所述凹槽124的底面在該第一表面1211上。在其它實施例中，所述凹槽124的底面可以位於該第一表面1211所在的平面與第二表面1212所在的平面之間。
所述絕緣層133包括多個間隔設置的第一絕部1331、位於該第一絕緣部1331之間且與該第一絕緣部1331連接在一起的多個第二絕緣部1332、 及連接在該第二絕緣部1332的遠離第一絕緣部1331的一端的第三絕緣部1333。該第一絕緣部1331結合在所述P電極132的遠離磊晶層12的表面上。該第二絕緣部1332結合在所述通孔1323的側壁及所述凹槽124的側壁上。該第三絕緣部1333結合在所述凹槽124的底面，且該第三絕緣部1333未完全覆蓋所述凹槽124的底面。每一第三絕緣部1333圍繞形成一卡槽1334，該卡槽1334的底面與所述凹槽124的底面重合。
所述N電極131包括N電極片1311及凸設在該N電極片1311上的凸塊1312。該N電極片1311位於所述第一絕緣部1331的遠離P型半導體層123的一側。該凸塊1312容置在所述通孔1323及所述凹槽124內，且該凸塊1312的遠離N電極片1311的端面與所述N型半導體層121直接接觸並電性連接。所述凸塊1312藉由所述第二絕緣部1332與所述P電極132、P型半導體層123及發光活性層122絕緣。
本實施例中，所述凸塊1312包括第一凸部1313及位於該第一凸部1313的遠離N電極片1311的一端的第二凸部1314。該第二凸部1314的沿平行於所述N電極片1311的方向上的截面尺寸小於該第一凸部1313的沿平行於所述N電極片1311的方向上的截面尺寸。該第二凸部1314的尺寸與所述卡槽1334的尺寸對應，該第二凸部1314卡合在所述卡槽1334內，以進一步加固所述N型半導體層121。
在所述凹槽124的底面位於所述第一表面1211上時，所述第三絕緣部1333的設計還可以進一步將N電極131與發光活性層122間隔開來，以避免N電極131與發光活性層122電連接而影響發光活性層122發光。
可以理解的，在其它實施例中，所述凸塊1312還可以不包括第二凸部1314，而僅包括第一凸部1313；所述絕緣層133可以不包括第三絕緣部1333，而僅包括第一絕緣部1331和第二絕緣部1332。此時，所述凸塊1312的第一凸部1313的遠離N電極片1311的端面與N型半導體層121直接接觸並電性連接。
所述P電極132包括P電極片1321及由該P電極片1321的遠離P型半導體的一表面的部分區域延伸形成的凸起1322。該P電極片1321貼附在所述P型半導體層123的遠離發光活性層122的表面。該凸起1322由所述P電極片1321的遠離P型半導體的一表面的部分區域延伸形成。該凸起1322與所述N電極131的N電極片1311之間具有一間隔槽1324。該間隔槽1324用於將P電極132的凸起1322與N電極131的N電極片1311間隔開來。所述絕緣層133的部分第一絕緣部1331延伸至該間隔槽1324的底部，以進一步避免P電極132與N電極131之間電性導通。
本實施例中，所述絕緣層133還包括一穿設在所述P電極132內的第四絕緣部1335，該第四絕緣部1335由位於間隔槽1324底部的第一絕緣部1331一體延伸形成。該第四絕緣部1335位於所述P電極片1321與凸起1322之間。該第四絕緣部1335上具有至少一孔1336。所述凸起1322部分填充於該孔1336內，從而與P電極片1321連接。該第四絕緣部1335的設置可以進一步將P電極132與絕緣層133固定在一起。
所述覆晶晶粒10還包括位於基板11與磊晶層12之間的緩衝層14。該緩衝層14可以調整所述磊晶層12的缺陷密度。
請進一步參閱圖2~3，一種顯示器200，其用於手機、電腦、電子閱讀器等電子裝置(圖未示)中。該顯示器200包括藍寶石基板201、以陣列形式排布在該藍寶石基板201上的多個發光二極體覆晶晶粒100、用於將該多個發光二極體覆晶晶粒100電性連接在一起的多個導線202、及用於將導線202與外部電源電性連接的多個電極片203。
在一實施方式中，所述多個發光二極體覆晶晶粒100之間藉由導線202並聯在一起，然後與電極片203電性連接，如此可以單獨控制任意一個發光二極體覆晶晶粒100發光或熄滅，從而形成單一色顯示器。在另一實施方式中，所述多個發光二極體覆晶晶粒100之間藉由導線202串聯在一起，然後與電極片203電性連接，如此，可以同時控制所述多個發光二極體覆晶晶粒100發光或熄滅。在又一實施方式中，所述多個發光二極體覆晶晶粒100部分並聯在一起，部分串聯在一起，如此，可以使所述顯示器200的發光多樣化。
在本實施例中，所述導線202為金線。可以理解的，在其它實施例中，所述導線202還可以為銅線、銀線等金屬線。
在本實施例中，所述電極片203的材質為銅。可以理解的，在其它實施例中，所述電極片203的材質還可以為金、銀、鋁等金屬。
一種所述顯示器200的製作方法，其包括以下步驟：
步驟S1：提供一藍寶石基板201。
步驟S2：在所述藍寶石基板201上藉由習知的晶粒製作方法形成覆晶晶粒層(圖未示)。
步驟S3：切割所述覆晶晶粒層，從而在藍寶石基板201上形成多個覆晶晶粒10。
步驟S4：在所述每一覆晶晶粒10的側面塗覆散熱吸光材料，從而在每一覆晶晶粒10的側面形成一散熱吸光層20，從而形成多個發光二極體覆晶晶粒100。
步驟S5：在所述藍寶石基板201上設置多個電極片203，使用導線202將所述多個發光二極體覆晶晶粒100電性連接，並使用導線202將發光二極體覆晶晶粒100與電極片203電性連接。
所述顯示器200採用藍寶石基板201作為顯示器基板，如此，可以直接在藍寶石基板201上形成所述發光二極體覆晶晶粒100，如此，顯示器200可以在晶粒製造段完成製作，不需要將晶粒鍵合至其它基板上，且散熱發光材料的凸部可以免除一般的固晶、封裝等製程，提高生產效率並在一定程度上提升良率。
本發明的發光二極體覆晶晶粒100包括設置在覆晶晶粒10的側面的散熱吸光層20，該散熱吸光層20即可以吸收從覆晶晶粒10側面出射的光，還可以將覆晶晶粒10產生的熱量散發出去，如此可以提高覆晶晶粒10的散熱， 避免覆晶晶粒10因散熱不良而造成的發出的光線波長偏移的現象，從而提高發光二極體覆晶晶粒100發光品質。
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，自不能以此限製本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。

Claims (7)

  1. 一種發光二極體覆晶晶粒，其包括覆晶晶粒，其改良在於，該發光二極體覆晶晶粒還包括結合於該覆晶晶粒的側面的散熱吸光層，所述覆晶晶粒包括基板、依次形成在所述基板上的N型半導體層、發光活性層、P型半導體層、與N型半導體層電連接的N電極、與P型半導體層電連接的P電極、以及位於N電極與P電極之間的絕緣層，所述散熱吸光層連接并包覆所述基板的側面、N型半導體層的側面、發光活性層的側面、P型半導體層的側面、P電極的側面、絕緣層的側面以及N電極的側面。
  2. 如申請專利範圍第1項所述的發光二極體覆晶晶粒，其中，所述散熱吸光層的材質為石墨、類鑽碳或矽膠。
  3. 如申請專利範圍第2項所述的發光二極體覆晶晶粒，其中，所述基板為藍寶石基板。
  4. 如申請專利範圍第1項所述的發光二極體覆晶晶粒，其中，所述P電極上形成有至少一通孔，所述磊晶層的遠離基板的一側具有至少一凹槽，每一凹槽的開口與一通孔對應，該凹槽貫穿所述P型半導體層、發光活性層，且該凹槽的底面為所述N型半導體層。
  5. 如申請專利範圍第4項所述的發光二極體覆晶晶粒，其中，所述絕緣層包括多個間隔設置的第一絕部、位於該第一絕緣部之間且與該第一絕緣部連接在一起的多個第二絕緣部，該第一絕緣部結合在所述P電極的遠離磊晶層的表面上，該第二絕緣部結合在所述通孔的側壁及所述凹槽的側壁上，所述N電極包括N電極片及凸設在該N電極片上的凸塊，該凸塊容置在所述通孔及所述凹槽內，該凸塊的遠離N電極片的端面與所述N型半導體層直接接觸並電性連接，且該凸塊與所述P電極、P型半導體層及發光活性層藉由所述第二絕緣部絕緣。
  6. 如申請專利範圍第5項所述的發光二極體覆晶晶粒，其中，所述絕緣層還包括連接在第二絕緣部的遠離第一絕緣部的一端的第三絕緣部，第三絕緣部結合在所述凹槽的部分底面，且每一第三絕緣部圍繞形成一卡槽，該卡槽的底面與所述凹槽的底面重合，所述凸塊包括第一凸部及位於該第一凸部的遠離N電極片的一端的第二凸部，該第二凸部卡合在所述卡槽內。
  7. 一種顯示器，其改良在於，該顯示器包括藍寶石基板、以陣列形式排布在該藍寶石基板上的如申請專利範圍第1至6項任意一項所述的多個發光二極體覆晶晶粒、及用於將該多個發光二極體覆晶晶粒電性連接在一起的多個導線。
TW105125361A 2016-08-04 2016-08-09 發光二極體覆晶晶粒及顯示器 TWI645580B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610631704.8A CN107689408B (zh) 2016-08-04 2016-08-04 发光二极管覆晶晶粒及显示器
??201610631704.8 2016-08-04

Publications (2)

Publication Number Publication Date
TW201810727A TW201810727A (zh) 2018-03-16
TWI645580B true TWI645580B (zh) 2018-12-21

Family

ID=61069746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105125361A TWI645580B (zh) 2016-08-04 2016-08-09 發光二極體覆晶晶粒及顯示器

Country Status (3)

Country Link
US (1) US10050188B2 (zh)
CN (1) CN107689408B (zh)
TW (1) TWI645580B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI736756B (zh) * 2018-04-03 2021-08-21 晶元光電股份有限公司 半導體元件
TWI758212B (zh) * 2018-04-03 2022-03-11 晶元光電股份有限公司 半導體元件
TWI797044B (zh) * 2018-04-03 2023-03-21 晶元光電股份有限公司 半導體元件
TWI778917B (zh) * 2018-04-03 2022-09-21 晶元光電股份有限公司 半導體元件
CN111276595A (zh) * 2018-12-04 2020-06-12 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN112652945B (zh) * 2019-10-12 2021-12-31 三赢科技（深圳）有限公司 散热基板及具有所述散热基板的发光装置
CN112582514A (zh) * 2020-12-11 2021-03-30 东莞市中晶半导体科技有限公司 一种led芯片、多合一芯片、显示模块及显示屏
TWI807377B (zh) * 2021-08-02 2023-07-01 國立陽明交通大學 覆晶式微發光二極體晶粒的製法及其製品
WO2023194369A1 (en) 2022-04-08 2023-10-12 Fundació Institut Mar D'investigacions Mèdiques (Imim) Genetic markers for severe covid-19

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901514A (en) * 2007-02-26 2009-01-01 Philips Lumileds Lighting Co LED with phosphor tile and overmolded phosphor in lens
TW201034251A (en) * 2009-03-06 2010-09-16 Advanced Optoelectronic Tech Lateral heat dissipation type LED and fabrication method thereof
TWM517423U (zh) * 2014-06-03 2016-02-11 首爾偉傲世有限公司 發光二極體

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8330178B2 (en) * 2010-05-11 2012-12-11 Advanced Semiconductor Engineering, Inc. Package structure and package process of light emitting diode
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9000470B2 (en) * 2010-11-22 2015-04-07 Cree, Inc. Light emitter devices
US8957429B2 (en) * 2012-02-07 2015-02-17 Epistar Corporation Light emitting diode with wavelength conversion layer
CN202564439U (zh) * 2012-03-31 2012-11-28 泉州市博泰半导体科技有限公司 半导体发光器件
KR102304741B1 (ko) * 2013-11-07 2021-09-24 루미리즈 홀딩 비.브이. Ｌｅｄ를 둘러싸는 내부 전반사 층을 갖는 ｌｅｄ를 위한 기판
CN105489722B (zh) * 2014-10-08 2018-10-26 展晶科技(深圳)有限公司 发光二极管封装结构、发光二极管晶粒及其制造方法
CN204216064U (zh) * 2014-12-03 2015-03-18 佛山市国星半导体技术有限公司 一种发光二极管
CN104659167A (zh) * 2015-02-11 2015-05-27 山东浪潮华光光电子股份有限公司 一种高可靠性GaN基LED芯片及其制备方法
US10147849B2 (en) * 2015-05-05 2018-12-04 Xiangneng Hualei Optoelectronic Co., Ltd Manufacturing method of flip-chip structure of group III semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901514A (en) * 2007-02-26 2009-01-01 Philips Lumileds Lighting Co LED with phosphor tile and overmolded phosphor in lens
TW201034251A (en) * 2009-03-06 2010-09-16 Advanced Optoelectronic Tech Lateral heat dissipation type LED and fabrication method thereof
TWM517423U (zh) * 2014-06-03 2016-02-11 首爾偉傲世有限公司 發光二極體

Also Published As

Publication number Publication date
CN107689408A (zh) 2018-02-13
US20180040793A1 (en) 2018-02-08
US10050188B2 (en) 2018-08-14
CN107689408B (zh) 2020-03-17
TW201810727A (zh) 2018-03-16

Similar Documents

Publication Publication Date Title
TWI645580B (zh) 發光二極體覆晶晶粒及顯示器
US9553243B2 (en) Light emitting device
US7985973B2 (en) Semiconductor light-emitting device and method of fabricating the same
US7569420B2 (en) Flip-chip packaging method for light emitting diode with eutectic layer not overlapping insulating layer
US20070096272A1 (en) Light emitting diode package
US9293663B1 (en) Light-emitting unit and semiconductor light-emitting device
JP4674487B2 (ja) 表面実装型発光装置
TW201327948A (zh) 發光二極體封裝與製作方法
US20210273138A1 (en) Light-emitting device and the method of manufacturing the same
US9801274B2 (en) Light emitting device
US9537019B2 (en) Semiconductor device
US20100084673A1 (en) Light-emitting semiconductor packaging structure without wire bonding
TW201334227A (zh) 發光模組
US10680140B2 (en) Light-emitting device and manufacturing method thereof
JP2017157593A (ja) 発光ダイオード、発光ダイオードの製造方法、発光ダイオード表示装置及び発光ダイオード表示装置の製造方法
US10784423B2 (en) Light emitting device
KR101192816B1 (ko) Ｌｅｄ 패키지 및 그 제조방법
JP6210720B2 (ja) Ｌｅｄパッケージ
US20160218263A1 (en) Package structure and method for manufacturing the same
JP5912471B2 (ja) 半導体デバイス
KR20110123945A (ko) 발광다이오드 방열 패키지 및 그 제조방법
JP2015185685A (ja) 発光装置の製造方法及び照明装置
TWI573299B (zh) 化合物半導體元件之封裝模組結構及其製造方法
JP6619966B2 (ja) 半導体発光装置
KR101166066B1 (ko) 발광다이오드 패키지

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees