CN107689408A - 发光二极管覆晶晶粒及显示器 - Google Patents

发光二极管覆晶晶粒及显示器 Download PDF

Info

Publication number
CN107689408A
CN107689408A CN201610631704.8A CN201610631704A CN107689408A CN 107689408 A CN107689408 A CN 107689408A CN 201610631704 A CN201610631704 A CN 201610631704A CN 107689408 A CN107689408 A CN 107689408A
Authority
CN
China
Prior art keywords
crystal grain
light emitting
flip
electrode
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610631704.8A
Other languages
English (en)
Other versions
CN107689408B (zh
Inventor
沈佳辉
洪梓健
彭建忠
黄建翔
黄世晟
刘芝蓉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201610631704.8A priority Critical patent/CN107689408B/zh
Priority to TW105125361A priority patent/TWI645580B/zh
Priority to US15/482,967 priority patent/US10050188B2/en
Publication of CN107689408A publication Critical patent/CN107689408A/zh
Application granted granted Critical
Publication of CN107689408B publication Critical patent/CN107689408B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

一种发光二极管覆晶晶粒，其包括覆晶晶粒及结合于该覆晶晶粒的侧面的散热吸光层。所述发光二极管覆晶晶粒包括设置在覆晶晶粒的侧面的散热吸光层，该散热吸光层即可以吸收从覆晶晶粒侧面出射的光，还可以将覆晶晶粒产生的热量散发出去，如此可以提高覆晶晶粒的散热，避免覆晶晶粒因散热不良而造成的发出的光线波长偏移的现象，从而提高发光二极管覆晶晶粒发光质量。另，本发明还提供一种应用所述发光二极管覆晶晶粒的显示器。

Description

发光二极管覆晶晶粒及显示器
技术领域
本发明涉及一种发光二极管覆晶晶粒及应用该发光二极管覆晶晶粒的显示器。
背景技术
随着LED产业不断发展，覆晶式发光二极管以其封装体积小、发光面积大等优势使其正逐步替代常规发光二极管，而广泛应用于LED照明产业。
覆晶式发光二极管的发光功率较高，发光时产生的热量也较多，若散热不良将会导致发光二极管产生的光的波长偏移，影响发光二极管的发光效果。
发明内容
有鉴于此，有必要提供一种散热效果较好的发光二极管覆晶晶粒，以解决上述问题。
另，还有必要提供一种应用上述发光二极管覆晶晶粒的显示器。
一种发光二极管覆晶晶粒，其包括覆晶晶粒及结合于该覆晶晶粒的侧面的散热吸光层。
一种显示器，其包括蓝宝石基板、以阵列形式排布在该蓝宝石基板上所述多个发光二极管覆晶晶粒、及用于将该多个发光二极管覆晶晶粒电性连接在一起的多个导线。
所述发光二极管覆晶晶粒包括设置在覆晶晶粒的侧面的散热吸光层，该散热吸光层即可以吸收从覆晶晶粒侧面出射的光，还可以将覆晶晶粒产生的热量散发出去，如此可以提高覆晶晶粒的散热，避免覆晶晶粒因散热不良而造成的发出的光线波长偏移的现象，从而提高发光二极管覆晶晶粒发光质量。
附图说明
图1是本发明较佳实施例的发光二极管覆晶晶粒的截面示意图。
图2是本发明较佳实施例的显示器的立体图。
图3是图2所示的显示器的俯视图。
主要元件符号说明
发光二极管覆晶晶粒 100
覆晶晶粒 10
基板 11
磊晶层 12
N型半导体层 121
第一表面 1211
第二表面 1212
发光活性层 122
P型半导体层 123
凹槽 124
电极层 13
N电极 131
N电极片 1311
凸块 1312
第一凸部 1313
第二凸部 1314
P电极 132
P电极片 1321
凸起 1322
通孔 1323
间隔槽 1324
绝缘层 133
第一绝缘部 1331
第二绝缘部 1332
第三绝缘部 1333
卡槽 1334
第四绝缘部 1335
孔 1336
缓冲层 14
散热吸光层 20
显示器 200
蓝宝石基板 201
导线 202
电极片 203
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请结合参阅图1，本发明较佳实施方式提供一种发光二极管覆晶晶粒100，其包括覆晶晶粒10及结合于该覆晶晶粒10侧面的散热吸光层20。该散热吸光层20用于吸收从覆晶晶粒10的侧面出射的光，并将覆晶晶粒10产生的热量散发出去。
所述散热吸光层20的材质为石墨、类钻碳、硅胶等既具有吸光功能又具有散热功能的材料。该散热吸光层20可以避免覆晶晶粒10因散热不良而造成的发出的光线波长偏移的现象，从而提高发光二极管覆晶晶粒100的发光质量。该散热吸光层20通过涂胶技术涂布在覆晶晶粒10的侧面，如此，可以直接通过该散热吸光层实现覆晶晶粒10的封装及固晶，减小封装后的发光二极管覆晶晶粒100的体积，提高封装精度，并精确控制散热吸光层20对覆晶晶粒10的包覆，提高包覆精度。
所述覆晶晶粒10包括基板11、形成在该基板11一表面的磊晶层12、及与该磊晶层12电性连接的电极层13。
所述基板11为蓝宝石基板。该蓝宝石基板的透光性好，且坚固耐用。
所述磊晶层12包括设置在基板11上的N型半导体层121、设置在该N型半导体层121的远离基板11的表面上的至少一发光活性层122、及设置在该发光活性层122的远离N型半导体层121的表面上的P型半导体层123。
所述电极层13包括N电极131、P电极132、及位于该N电极131与P电极132之间的绝缘层133。该N电极131与所述N型半导体层121电性连接。该P电极132与所述P型半导体层123电性连接。该绝缘层133用于将N电极131及P电极132绝缘，以避免N电极131与P电极132之间发生短路。
所述P电极132结合于所述P型半导体层123的远离所述发光活性层122的表面。该P电极132上形成有至少一通孔1323。
所述磊晶层12的远离基板11的一侧具有至少一凹槽124。每一凹槽124的开口与一通孔1323对应。该凹槽124贯穿所述P型半导体层123、发光活性层122，且该凹槽124的底面为所述N型半导体层121。
所述N型半导体层121具有一邻近所述发光活性层122的第一表面1211及与该第一表面相背的第二表面1212。在至少一实施例中，所述凹槽124的底面为该第一表面1211，即所述凹槽124的底面在该第一表面1211上。在其它实施例中，所述凹槽124的底面可以位于该第一表面1211所在的平面与第二表面1212所在的平面之间。
所述绝缘层133包括多个间隔设置的第一绝部1331、位于该第一绝缘部1331之间且与该第一绝缘部1331连接在一起的多个第二绝缘部1332、及连接在该第二绝缘部1332的远离第一绝缘部1331的一端的第三绝缘部1333。该第一绝缘部1331结合在所述P电极132的远离磊晶层12的表面上。该第二绝缘部1332结合在所述通孔1323的侧壁及所述凹槽124的侧壁上。该第三绝缘部1333结合在所述凹槽124的底面，且该第三绝缘部1333未完全覆盖所述凹槽124的底面。每一第三绝缘部1333围绕形成一卡槽1334，该卡槽1334的底面与所述凹槽124的底面重合。
所述N电极131包括N电极片1311及凸设在该N电极片1311上的凸块1312。该N电极片1311位于所述第一绝缘部1331的远离P型半导体层123的一侧。该凸块1312容置在所述通孔1323及所述凹槽124内，且该凸块1312的远离N电极片1311的端面与所述N型半导体层121直接接触并电性连接。所述凸块1312通过所述第二绝缘部1332与所述P电极132、P型半导体层123及发光活性层122绝缘。
本实施例中，所述凸块1312包括第一凸部1313及位于该第一凸部1313的远离N电极片1311的一端的第二凸部1314。该第二凸部1314的沿平行于所述N电极片1311的方向上的截面尺寸大于该第一凸部1313的沿平行于所述N电极片1311的方向上的截面尺寸。该第二凸部1314的尺寸与所述卡槽1334的尺寸对应，该第二凸部1314卡合在所述卡槽1334内，以进一步加固所述N型半导体层121。
在所述凹槽124的底面位于所述第一表面1211上时，所述第三绝缘部1333的设计还可以进一步将N电极131与发光活性层122间隔开来，以避免N电极131与发光活性层122电连接而影响发光活性层122发光。
可以理解的，在其它实施例中，所述凸块1312还可以不包括第二凸部1314，而仅包括第一凸部1313；所述绝缘层133可以不包括第三绝缘部1333，而仅包括第一绝缘部1331和第二绝缘部1332。此时，所述凸块1312的第一凸部1313的远离N电极片1311的端面与N型半导体层121直接接触并电性连接。
所述P电极132包括P电极片1321及由该P电极片1321的远离P型半导体的一表面的部分区域延伸形成的凸起1322。该P电极片1321贴附在所述P型半导体层123的远离发光活性层122的表面。该凸起1322由所述P电极片1321的远离P型半导体的一表面的部分区域延伸形成。该凸起1322与所述N电极131的N电极片1311之间具有一间隔槽1324。该间隔槽1324用于将P电极132的凸起1322与N电极131的N电极片1311间隔开来。所述绝缘层133的部分第一绝缘部1331延伸至该间隔槽1324的底部，以进一步避免P电极132与N电极131之间电性导通。
本实施例中，所述绝缘层133还包括一穿设在所述P电极132内的第四绝缘部1335，该第四绝缘部1335由位于间隔槽1324底部的第一绝缘部1331一体延伸形成。该第四绝缘部1335位于所述P电极片1321与凸起1322之间。该第四绝缘部1335上具有至少一孔1336。所述凸起1322部分填充于该孔1336内，从而与P电极片1321连接。该第四绝缘部1335的设置可以进一步将P电极132与绝缘层133固定在一起。
所述覆晶晶粒10还包括位于基板11与磊晶层12之间的缓冲层14。该缓冲层14可以调整所述磊晶层12的缺陷密度。
请进一步参阅图2~3，一种显示器200，其用于手机、电脑、电子阅读器等电子装置（图未示）中。该显示器200包括蓝宝石基板201、以阵列形式排布在该蓝宝石基板201上的多个发光二极管覆晶晶粒100、用于将该多个发光二极管覆晶晶粒100电性连接在一起的多个导线202、及用于将导线202与外部电源电性连接的多个电极片203。
在一实施方式中，所述多个发光二极管覆晶晶粒100之间通过导线202并联在一起，然后与电极片203电性连接，如此可以单独控制任意一个发光二极管覆晶晶粒100发光或熄灭，从而形成单一色显示器。在另一实施方式中，所述多个发光二极管覆晶晶粒100之间通过导线202串联在一起，然后与电极片203电性连接，如此，可以同时控制所述多个发光二极管覆晶晶粒100发光或熄灭。在又一实施方式中，所述多个发光二极管覆晶晶粒100部分并联在一起，部分串联在一起，如此，可以使所述显示器200的发光多样化。
在本实施例中，所述导线202为金线。可以理解的，在其它实施例中，所述导线202还可以为铜线、银线等金属线。
在本实施例中，所述电极片203的材质为铜。可以理解的，在其它实施例中，所述电极片203的材质还可以为金、银、铝等金属。
一种所述显示器200的制作方法，其包括以下步骤：
步骤S1：提供一蓝宝石基板201。
步骤S2：在所述蓝宝石基板201上通过常规的晶粒制作方法形成覆晶晶粒层（图未示）。
步骤S3：切割所述覆晶晶粒层，从而在蓝宝石基板201上形成多个覆晶晶粒10。
步骤S4：在所述每一覆晶晶粒10的侧面涂覆散热吸光材料，从而在每一覆晶晶粒10的侧面形成一散热吸光层20，从而形成多个发光二极管覆晶晶粒100。
步骤S5：在所述蓝宝石基板201上设置多个电极片203，使用导线202将所述多个发光二极管覆晶晶粒100电性连接，并使用导线202将发光二极管覆晶晶粒100与电极片203电性连接。
所述显示器200采用蓝宝石基板201作为显示器基板，如此，可以直接在蓝宝石基板201上形成所述发光二极管覆晶晶粒100，如此，显示器200可以在晶粒制造段完成制作，不需要将晶粒键合至其它基板上，且散热发光材料的凸部可以免除一般的固晶、封装等制程，提高生产效率并在一定程度上提升良率。
本发明的发光二极管覆晶晶粒100包括设置在覆晶晶粒10的侧面的散热吸光层20，该散热吸光层20即可以吸收从覆晶晶粒10侧面出射的光，还可以将覆晶晶粒10产生的热量散发出去，如此可以提高覆晶晶粒10的散热，避免覆晶晶粒10因散热不良而造成的发出的光线波长偏移的现象，从而提高发光二极管覆晶晶粒100发光质量。
另外，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管覆晶晶粒，其包括覆晶晶粒，其特征在于：该发光二极管覆晶晶粒还包括结合于该覆晶晶粒的侧面的散热吸光层。
2.如权利要求1所述的发光二极管覆晶晶粒，其特征在于：所述散热吸光层的材质为石墨、类钻碳或硅胶。
3.如权利要求1所述的发光二极管覆晶晶粒，其特征在于：所述覆晶晶粒包括基板、形成在该基板一表面的磊晶层、及与该磊晶层电性连接的电极层。
4.如权利要求2所述的发光二极管覆晶晶粒，其特征在于：所述基板为蓝宝石基板。
5.如权利要求2所述的发光二极管覆晶晶粒，其特征在于：所述磊晶层包括设置在基板上的N型半导体层、设置在该N型半导体层的远离基板的表面上的至少一发光活性层、及设置在该发光活性层的远离N型半导体层的表面上的P型半导体层。
6.如权利要求5所述的发光二极管覆晶晶粒，其特征在于：所述电极层包括N电极、P电极、及位于该N电极与P电极之间的绝缘层，该N电极与所述N型半导体层电性连接，该P电极与所述P型半导体层电性连接。
7.如权利要求6所述的发光二极管覆晶晶粒，其特征在于：所述P电极上形成有至少一通孔，所述磊晶层的远离基板的一侧具有至少一凹槽，每一凹槽的开口与一通孔对应，该凹槽贯穿所述P型半导体层、发光活性层，且该凹槽的底面为所述N型半导体层。
8.如权利要求7所述的发光二极管覆晶晶粒，其特征在于：所述绝缘层包括多个间隔设置的第一绝部、位于该第一绝缘部之间且与该第一绝缘部连接在一起的多个第二绝缘部，该第一绝缘部结合在所述P电极的远离磊晶层的表面上，该第二绝缘部结合在所述通孔的侧壁及所述凹槽的侧壁上，所述N电极包括N电极片及凸设在该N电极片上的凸块，该凸块容置在所述通孔及所述凹槽内，该凸块的远离N电极片的端面与所述N型半导体层直接接触并电性连接，且该凸块与所述P电极、P型半导体层及发光活性层通过所述第二绝缘部绝缘。
9.如权利要求8所述的发光二极管覆晶晶粒，其特征在于：所述绝缘层还包括连接在第二绝缘部的远离第一绝缘部的一端的第三绝缘部，第三绝缘部结合在所述凹槽的部分底面，且每一第三绝缘部围绕形成一卡槽，该卡槽的底面与所述凹槽的底面重合，所述凸块包括第一凸部及位于该第一凸部的远离N电极片的一端的第二凸部，该第二凸部卡合在所述卡槽内。
10.一种显示器，其特征在于：该显示器包括蓝宝石基板、以阵列形式排布在该蓝宝石基板上的如权利要求1~9任意一项所述的多个发光二极管覆晶晶粒、及用于将该多个发光二极管覆晶晶粒电性连接在一起的多个导线。
CN201610631704.8A 2016-08-04 2016-08-04 发光二极管覆晶晶粒及显示器 Expired - Fee Related CN107689408B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610631704.8A CN107689408B (zh) 2016-08-04 2016-08-04 发光二极管覆晶晶粒及显示器
TW105125361A TWI645580B (zh) 2016-08-04 2016-08-09 發光二極體覆晶晶粒及顯示器
US15/482,967 US10050188B2 (en) 2016-08-04 2017-04-10 Light emitting diode chip and display composed of light emitting diode chips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610631704.8A CN107689408B (zh) 2016-08-04 2016-08-04 发光二极管覆晶晶粒及显示器

Publications (2)

Publication Number Publication Date
CN107689408A true CN107689408A (zh) 2018-02-13
CN107689408B CN107689408B (zh) 2020-03-17

Family

ID=61069746

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610631704.8A Expired - Fee Related CN107689408B (zh) 2016-08-04 2016-08-04 发光二极管覆晶晶粒及显示器

Country Status (3)

Country Link
US (1) US10050188B2 (zh)
CN (1) CN107689408B (zh)
TW (1) TWI645580B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276595A (zh) * 2018-12-04 2020-06-12 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN112582514A (zh) * 2020-12-11 2021-03-30 东莞市中晶半导体科技有限公司 一种led芯片、多合一芯片、显示模块及显示屏

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI736756B (zh) * 2018-04-03 2021-08-21 晶元光電股份有限公司 半導體元件
TWI758212B (zh) * 2018-04-03 2022-03-11 晶元光電股份有限公司 半導體元件
TWI778917B (zh) * 2018-04-03 2022-09-21 晶元光電股份有限公司 半導體元件
TWI797044B (zh) * 2018-04-03 2023-03-21 晶元光電股份有限公司 半導體元件
CN112652945B (zh) * 2019-10-12 2021-12-31 三赢科技（深圳）有限公司 散热基板及具有所述散热基板的发光装置
TWI807377B (zh) * 2021-08-02 2023-07-01 國立陽明交通大學 覆晶式微發光二極體晶粒的製法及其製品
WO2023194369A1 (en) 2022-04-08 2023-10-12 Fundació Institut Mar D'investigacions Mèdiques (Imim) Genetic markers for severe covid-19

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202564439U (zh) * 2012-03-31 2012-11-28 泉州市博泰半导体科技有限公司 半导体发光器件
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法
CN204216064U (zh) * 2014-12-03 2015-03-18 佛山市国星半导体技术有限公司 一种发光二极管
CN104659167A (zh) * 2015-02-11 2015-05-27 山东浪潮华光光电子股份有限公司 一种高可靠性GaN基LED芯片及其制备方法
CN105489722A (zh) * 2014-10-08 2016-04-13 展晶科技(深圳)有限公司 发光二极管封装结构、发光二极管晶粒及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
TWI407596B (zh) * 2009-03-06 2013-09-01 Advanced Optoelectronic Tech 側邊散熱型發光二極體及其製程
US8330178B2 (en) * 2010-05-11 2012-12-11 Advanced Semiconductor Engineering, Inc. Package structure and package process of light emitting diode
US9000470B2 (en) * 2010-11-22 2015-04-07 Cree, Inc. Light emitter devices
US8957429B2 (en) * 2012-02-07 2015-02-17 Epistar Corporation Light emitting diode with wavelength conversion layer
KR102304741B1 (ko) * 2013-11-07 2021-09-24 루미리즈 홀딩 비.브이. Ｌｅｄ를 둘러싸는 내부 전반사 층을 갖는 ｌｅｄ를 위한 기판
KR20150139194A (ko) * 2014-06-03 2015-12-11 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
WO2016177333A1 (zh) * 2015-05-05 2016-11-10 湘能华磊光电股份有限公司 Iii族半导体发光器件倒装结构的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法
CN202564439U (zh) * 2012-03-31 2012-11-28 泉州市博泰半导体科技有限公司 半导体发光器件
CN105489722A (zh) * 2014-10-08 2016-04-13 展晶科技(深圳)有限公司 发光二极管封装结构、发光二极管晶粒及其制造方法
CN204216064U (zh) * 2014-12-03 2015-03-18 佛山市国星半导体技术有限公司 一种发光二极管
CN104659167A (zh) * 2015-02-11 2015-05-27 山东浪潮华光光电子股份有限公司 一种高可靠性GaN基LED芯片及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276595A (zh) * 2018-12-04 2020-06-12 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN112582514A (zh) * 2020-12-11 2021-03-30 东莞市中晶半导体科技有限公司 一种led芯片、多合一芯片、显示模块及显示屏

Also Published As

Publication number Publication date
TWI645580B (zh) 2018-12-21
TW201810727A (zh) 2018-03-16
CN107689408B (zh) 2020-03-17
US20180040793A1 (en) 2018-02-08
US10050188B2 (en) 2018-08-14

Similar Documents

Publication Publication Date Title
CN107689408A (zh) 发光二极管覆晶晶粒及显示器
US11444008B2 (en) Semiconductor light emitting device and method for manufacturing the same
US6812502B1 (en) Flip-chip light-emitting device
US8546160B2 (en) Method for packaging light emitting diodes
US8354284B2 (en) LED module and method of manufacturing the same
TWI466320B (zh) 發光二極體晶片
CN203038965U (zh) 发光元件
KR20140022640A (ko) 반도체 발광소자 및 발광장치
TW201620153A (zh) 發光元件的電極結構
TWI462342B (zh) 發光二極體封裝結構及其製造方法
US20130175563A1 (en) Led chip structure, packaging substrate, package structure and fabrication method thereof
JP2014107369A (ja) 半導体発光装置
US8748913B2 (en) Light emitting diode module
CN102856481A (zh) 半导体发光器件封装件
US8987750B2 (en) LED chip packaging structure, its manufacturing method, and display device
CN201893369U (zh) 一种发光二极管
KR20150042954A (ko) 측면발광 발광 장치 및 그 제조 방법
US20130069092A1 (en) Light-emitting diode and method manufacturing the same
CN103456856A (zh) 一种倒装led芯片的欧姆接触电极结构及倒装led芯片
CN203787469U (zh) 发光结构
KR20120107383A (ko) 수직우물구조를 갖는 발광소자 및 제조방법
CN201904337U (zh) 一种具有集成电路的发光器件
TWI467808B (zh) 發光二極體元件、其製作方法以及發光裝置
CN102104037A (zh) 一种具有集成电路的发光器件及其制造方法
TW201618275A (zh) 發光二極體

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200317

Termination date: 20200804

CF01 Termination of patent right due to non-payment of annual fee