CN111276595A - 发光二极管及其制作方法 - Google Patents
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Abstract
本发明提供一种发光二极管,包括:一基板;一外延结构,其包括依次形成在所述基板上的n型半导体层、活性层及p型半导体层,所述外延结构设有第一凹陷部与第二凹陷部,其中所述第一凹陷部延伸至所述n型半导体层;一吸光材料,其设于所述第二凹陷部中;一n型电极,其设于所述第一凹陷部并与所述n型半导体层形成欧姆接触;一p型电极,其与所述p型半导体层形成欧姆接触;所述p型电极、所述吸光材料及所述n型电极依次间隔设置。本发明的发光二极管出光均匀。本发明还提供一种发光二极管制作方法。
Description
技术领域
本发明涉及发光二极管及其制作方法。
背景技术
现如今,发光二极管(light emitting diode,LED)光源被广泛应用于背光模组中。图1a至图1c示出了传统的发光二极管的光场分布,其中,图1a所示为朗伯型(lambertian)光场分布,图1b所示为侧光型(lambertian)光场分布,图1c所示为聚光型光场分布。由图1a至图1c可见,现有的发光二极管组件光型为集中形,会产生区域亮点,这需要增厚光学扩散板或是增加发光二极管组件密度来解决。而这并不利于平面光源模组薄型化且会提高制作成本。
发明内容
有鉴于此,本发明提供一种发光二极管以解决以上问题。
另,还有必要提供一种上述发光二极管的制作方法。
本发明较佳实施方式提供一种发光二极管,包括:一基板;一外延结构,其包括依次形成在所述基板上的n型半导体层、活性层及p型半导体层,所述外延结构设有第一凹陷部与第二凹陷部,其中所述第一凹陷部延伸至所述n型半导体层;一吸光材料,其设于所述第二凹陷部中;一n型电极,其设于所述第一凹陷部并与所述n型半导体层形成欧姆接触;一p型电极,其与所述p型半导体层形成欧姆接触;所述p型电极、所述吸光材料及所述n型电极依次间隔设置。
本发明较佳实施方式还提供一种发光二极管制作方法,包括:提供一基板,并在所述基板上形成外延结构,所述外延结构包括依次形成在基板上的n型半导体层、活性层及p型半导体层;蚀刻所述外延结构以形成第一凹陷部与第二凹陷部,所述第一凹陷部露出所述n型半导体层;在所述第二凹陷部中填充吸光材料;在所述第一凹陷部中形成n型电极,所述n型电极与所述n型半导体层电性连接,在所述p型半导体层上形成p型电极,所述p型电极与所述p型半导体层电性连接,其中,所述p型电极、所述吸光材料及所述n型电极依次间隔设置。
本发明的发光二极管在n型电极与p型电极之间设置第二凹陷部。并在第二凹陷部中填入吸光材料。第二凹陷部形成一中心暗区,吸光材料能够吸收光线以降低反射,达到蝠翼型光场。本发明的发光二极管具备出光均匀的优点。
附图说明
图1a至图1c是传统发光二极管的光场分布。
图2为本发明一较佳实施方式提供的基板及外延结构的剖视图。
图3为图2所示的外延结构上形成第一凹陷部与第二凹陷部的剖视图。
图4为图3所示的外延结构上形成绝缘层的剖视图。
图5为图4所示的外延结构上形成透明电流扩散层的剖视图。
图6为图5所示的透明电流扩散层上形成钝化层的剖视图。
图7为图6所示的第二凹陷部中填充吸光材料的剖视图。
图8为图7所示的钝化层上形成反射层的剖视图。
图9为图8所示结构形成第一盲孔与第二盲孔的剖视图。
图10为本发明实施方式制得的发光二极管的剖视图。
图11为本发明实施方式制得的发光二极管的光场分布。
主要元件符号说明
发光二极管 100
基板 10
外延结构 20
n型半导体层 21
活性层 22
p型半导体层 23
第一凹陷部 24
第二凹陷部 25
吸光材料 251
绝缘层 30
透明电流扩散层 40
钝化层 50
反射层 60
第一盲孔 71
第二盲孔 72
n型电极 81
p型电极 82
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请参阅图10,本发明一较佳实施方式提供一种发光二极管100,包括一基板10,形成在所述基板10上的一外延结构20,形成在所述外延结构20上的n型电极81与p型电极82,以及形成在所述n型电极81与p型电极82之间的吸光材料251。
所述基板10通常为蓝宝石(Sapphire)、碳化硅(SiC)、硅(Si)、砷化镓(GaAs)、偏铝酸锂(LiAlO2)、氧化镁(MgO)、氧化锌(ZnO)、氮化镓(GaN)、氮化铝(AlN)、或氮化铟(InN)等单晶基板。
所述外延结构20包括依次形成在基板10上的n型半导体层21、活性层22及p型半导体层23。
所述n型半导体层21、活性层22及p型半导体层23可为单层或多层结构,其选用III族氮化物半导体材料。其中,III族元素可为Al、Ga、In等元素。典型的,所述n型半导体层21、活性层22及p型半导体层23可分别为n型氮化镓、氮化镓铟(InGaN)及p型氮化镓。
所述外延结构20设有第一凹陷部24与第二凹陷部25,其中所述第一凹陷部24延伸至所述n型半导体层21。
在本实施例中,所述第二凹陷部25的深度为1微米,但不限于此。
所述吸光材料251埋设于所述第二凹陷部25中。所述吸光材料251可以为铬(Cr)、黑色光阻(黑胶)或其他吸光物质。
所述吸光材料251的厚度优选为100nm至500nm。
所述n型电极81设于所述第一凹陷部24并与所述n型半导体层21形成欧姆接触。
所述p型电极82与所述p型半导体层23形成欧姆接触。所述p型电极82、所述吸光材料251及所述n型电极81依次间隔设置。
在本实施例中,所述发光二极管100进一步包括一绝缘层30。所述绝缘层30设置在所述p型电极82朝向所述基板10的一侧。所述绝缘层30用于阻隔电流朝向p型电极82的下方扩散,以避免发出的光被p型电极82遮挡。所述绝缘层30可由二氧化硅(SiO2)、氮化铝(AlN)、氮硅化合物(SixNy)等材料的其中一种制成。本实施例中优选为二氧化硅。
在本实施例中,所述发光二极管100进一步包括一透明电流扩散层40。所述透明电流扩散层40覆盖所述p型半导体层23,用于加强电流扩散,从而提高出光效率。并且,由于所述透明电流扩散层40为透明,因此,其不会遮挡所述发光二极管100的出光。
在本实施例中,所述发光二极管100进一步包括一钝化层50。所述钝化层50覆盖于所述n型半导体层21及透明电流扩散层40的外侧。所述钝化层50保护发光区域不受到外界污染或干扰而导致受损。所述钝化层50的材料可为二氧化硅(SiO2)或氮化硅(Si3N4)。
在本实施例中,所述发光二极管100进一步包括一反射层60。所述反射层60覆盖于所述钝化层50外侧。所述反射层60用于反射该发光二极管发出的且照射至所述反射层60上的光线,从而减少了二极管的侧面出光,以提高出光效率。
在本实施例中,所述发光二极管100的发光面的面积为130微米*250微米;所述n型电极81/p型电极82的横截面面积为50微米*90微米;所述第二凹陷部25的横截面积为25微米*25微米;所述基板10的厚度为90微米,但不限于此,在其他实施例中,上述参数可以按照需要设置。
本发明的发光二极管100在n型电极81与p型电极82之间设置第二凹陷部25。并在第二凹陷部25中填入吸光材料251。请参阅图11,为本发明的发光二极管100的光场分布。第二凹陷部25形成一中心暗区,吸光材料251能够吸收光线以降低反射,达到蝠翼型光场。本发明的发光二极管100具备出光均匀的优点。
请参阅图2至图10,本发明一较佳实施方式还提供一种发光二极管的制作方法,其包括如下步骤:
请参阅图2,步骤一:提供一基板10,并在所述基板10上形成外延结构20,所述外延结构20包括依次形成在基板10上的n型半导体层21、活性层22及p型半导体层23。
请参阅图3,步骤二:蚀刻所述外延结构20以形成第一凹陷部24与第二凹陷部25,所述第一凹陷部24露出所述n型半导体层21。
请参阅图4,步骤三:在所述p型半导体层23的部分表面形成一绝缘层30,所述绝缘层30、所述第二凹陷部25及所述第一凹陷部24依次间隔设置。
所述绝缘层30可由二氧化硅(SiO2)、氮化铝(AlN)、氮硅化合物(SixNy)等材料的其中一种制成。本实施例中优选为二氧化硅。
可以理解,在其他实施例中,可以省略本步骤。
请参阅图5,步骤四:在所述绝缘层30及所述p型半导体层23上形成一层透明电流扩散层40。
所述透明电流扩散层40以蒸镀,溅镀等物理气相沉积法形成,其材料可为铟锡氧化物(ITO)、氧化锌铟(IZO)、氧化锌铝(AZO)、氧化锌镓(GZO)、氧化铟镓(GIO)、氧化锌镓铟(IGZO)。
可以理解,在其他实施例中,可以省略本步骤。
请参阅图6,步骤五:在所述透明电流扩散层40、第一凹陷部24与第二凹陷部25上形成一层钝化层50。
所述钝化层50可利用二氧化硅(SiO2)或氮化硅(SiN)并采用化学气相沉积法形成,以保护发光二极管晶粒性质的稳定、隔绝外界对发光二极管晶粒的电性或物理干扰。
可以理解,在其他实施例中,可以省略本步骤。
请参阅图7,步骤六:在所述第二凹陷部25中填充吸光材料251。
所述吸光材料251可以是铬(Cr)、黑色光阻材料(黑胶)等。所述吸光材料251的厚度优选为100纳米至500纳米。
请参阅图8,步骤七:在所述吸光材料251及所述钝化层50上形成反射层60。
在本实施例中,所述反射层60通过蒸镀形成。所述反射层60由银或铝等金属材料制成。所述反射层60用于反射该发光二极管发出的且照射至所述反射层60上的光线,从而减少了二极管的侧面出光,以提高出光效率。
可以理解,在其他实施中,还可以先执行步骤七,再执行步骤六。
可以理解,在其他实施例中,可以省略本步骤。
请参阅图9,步骤八:蚀刻所述第一凹陷部24及所述绝缘层30所对应区域的反射层60及钝化层50以分别得到第一盲孔71与第二盲孔72。
所述第一盲孔71延伸至所述n型半导体层21,所述第二盲孔72延伸至所述透明电流扩散层40。
请参阅图10,步骤九:在所述第一盲孔71中及上方区域形成一n型电极81,所述n型电极81电性连接于所述n型半导体层21上;在所述第二盲孔72中及上方区域形成一p型电极82,所述p型电极82电性连接于所述透明电流扩散层40上。
所述n型电极81的材料可为钛/铝/钛/金(Ti/Al/Ti/Au)、铬金合金(Cr/Au)或铅/金(Pd/Au)。所述p型电极82的材料可为镍金合金(Ni/Au)、铂金合金(Pt/Au)、钨(W)、铬金合金(Cr/Au)或钯(Pd)。
可以理解,在其他实施例中,如果省略了步骤五及步骤七,则步骤八也可以省略,直接将n型电极81及p型电极82分别与n型半导体层21及透明电流扩散层40电性连接即可。
可以理解的是,以上实施例仅用来说明本发明,并非用作对本发明的限定。对于本领域的普通技术人员来说,根据本发明的技术构思做出的其它各种相应的改变与变形,都落在本发明权利要求的保护范围之内。
Claims (10)
1.一种发光二极管,包括:
一基板;
一外延结构,其包括依次形成在所述基板上的n型半导体层、活性层及p型半导体层,所述外延结构设有第一凹陷部与第二凹陷部,其中所述第一凹陷部延伸至所述n型半导体层;
一吸光材料,其设于所述第二凹陷部中;
一n型电极,其设于所述第一凹陷部并与所述n型半导体层形成欧姆接触;
一p型电极,其与所述p型半导体层形成欧姆接触;
所述p型电极、所述吸光材料及所述n型电极依次间隔设置。
2.如权利要求1所述的发光二极管,其特征在于,所述吸光材料为铬或黑色光阻。
3.如权利要求1所述的发光二极管,其特征在于,所述发光二极管包括一绝缘层,所述绝缘层设置在所述p型电极朝向所述基板的一侧。
4.如权利要求1所述的发光二极管,其特征在于,所述发光二极管包括一透明电流扩散层,所述透明电流扩散层覆盖所述p型半导体层。
5.如权利要求1所述的发光二极管,其特征在于,所述发光二极管包括一钝化层,所述钝化层覆盖于所述n型半导体层及所述p型半导体层。
6.如权利要求1所述的发光二极管,其特征在于,所述发光二极管包括一反射层,所述反射层覆盖于所述n型半导体层及所述p型半导体层。
7.一种发光二极管制作方法,包括:
提供一基板,并在所述基板上形成外延结构,所述外延结构包括依次形成在基板上的n型半导体层、活性层及p型半导体层;
蚀刻所述外延结构以形成第一凹陷部与第二凹陷部,所述第一凹陷部露出所述n型半导体层;
在所述第二凹陷部中填充吸光材料;
在所述第一凹陷部中形成n型电极,所述n型电极与所述n型半导体层电性连接,在所述p型半导体层上形成p型电极,所述p型电极与所述p型半导体层电性连接,其中,所述p型电极、所述吸光材料及所述n型电极依次间隔设置。
8.如权利要求7所述的发光二极管制作方法,其特征在于,在形成第一凹陷部与第二凹陷部之后及在所述第二凹陷部中填充吸光材料之前,还包括步骤:在所述p型半导体层的部分表面形成一绝缘层,所述绝缘层、所述第二凹陷部及所述第一凹陷部依次间隔设置,所述p型电极对准所述绝缘层。
9.如权利要求8所述的发光二极管制作方法,其特征在于,在形成所述绝缘层之后及在所述第二凹陷部中填充吸光材料之前,还包括步骤:在所述绝缘层及所述p型半导体层上形成一层透明电流扩散层。
10.如权利要求7所述的发光二极管制作方法,其特征在于,所述吸光材料为铬或黑色光阻材料。
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WO2017183944A1 (ko) * | 2016-04-22 | 2017-10-26 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 표시장치 |
CN107689408A (zh) * | 2016-08-04 | 2018-02-13 | 展晶科技(深圳)有限公司 | 发光二极管覆晶晶粒及显示器 |
WO2018088851A1 (ko) * | 2016-11-10 | 2018-05-17 | 엘지이노텍 주식회사 | 반도체 소자 |
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WO2017183944A1 (ko) * | 2016-04-22 | 2017-10-26 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 표시장치 |
CN107689408A (zh) * | 2016-08-04 | 2018-02-13 | 展晶科技(深圳)有限公司 | 发光二极管覆晶晶粒及显示器 |
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