US20200274041A1 - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
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- US20200274041A1 US20200274041A1 US16/806,816 US202016806816A US2020274041A1 US 20200274041 A1 US20200274041 A1 US 20200274041A1 US 202016806816 A US202016806816 A US 202016806816A US 2020274041 A1 US2020274041 A1 US 2020274041A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device including an external optical element.
- the refractive index of the external optical element is larger than or about the same as that of a transparent substrate of a light-emitting structure, or in-between that of the transparent substrate and an encapsulant.
- a light emitting diode is a solid-state semiconductor element including at least a p-n junction.
- the p-n junction is formed between a p-type and an n-type semiconductor layers.
- the p-n junction receives a suitable forward voltage, the holes of the p-type semiconductor layer and the electrons of the n-type semiconductor layer are combined to emit light.
- the region emitting light is called a light-emitting region.
- the light emitted from the light-emitting region is forwarded omni-directionally.
- a user usually needs only the light forwarding to a specific direction. Consequently, a reflective layer or a mirror for reflecting a portion of the light is adopted.
- the difference of the refractive indices between the LED's material and environmental medium can result in total reflection of the light emitting to the boundary of the LED in a specific incident angle. In general, it is unavoidable for each kind of the reflective light mentioned above to travel through inside the LED.
- a known LED 100 includes a substrate 110 and an epitaxy layer 130 .
- the epitaxy layer 130 includes an active layer 131 which can emit light omni-directionally when receiving a forward voltage.
- a reflective layer 150 is formed between the epitaxy layer 130 and the substrate 110 to reflect the light from the active layer 131 .
- a first ray R 1 emits to the upside of the LED 100 .
- the refractive index of the environmental medium is less than that of the LED 100 and the incident angle is larger than the critical angle
- the first ray R 1 can be reflected totally at the boundary of the LED 100 and then return to the inside thereof.
- the first ray R 1 passes the active layer 131
- a portion of the first ray R 1 is absorbed by the active layer 131
- the other portion of the first ray R 1 that is not absorbed emits to the reflective layer 150 and is reflected upward to pass the active layer 131 again.
- the first ray R 1 resonates in the epitaxy layer 130 , passes the active layer 131 repetitiously, and then is absorbed gradually.
- a second ray R 2 emitting to the downside of the LED 100 also resonates in the epitaxy layer 130 , passes the active layer 131 repetitiously, and then is absorbed gradually.
- FIG. 1B it shows no reflective layer is formed between the substrate 110 and the epitaxy layer 130 of the LED 100 , and the substrate 110 is transparent relative to the light emitted from the active layer 131 .
- the downside of the substrate 110 can attach to a mirror (not shown here) or air only. If a third ray R 3 reflected from the bottom of the substrate 110 emits to the lateral wall of the substrate 110 with an incident angle ⁇ I larger than a critical angle ⁇ C , it can be reflected into the epitaxy layer 130 and be absorbed by the active layer 131 . As mentioned above, the third ray R 3 could be reflected totally at the boundary of the epitaxy layer 130 and then return to the inside thereof.
- the active layer 130 could resonate in the epitaxy layer 130 , pass the active 131 repetitiously, and then be absorbed thereby.
- the light absorption in the active layer 131 reduces the light extraction efficiency of the LED 100 to some extent.
- small chip like 8 mil or 10 mil which has larger area ratio occupied by the pad, light can be reflected by the pad more easily and has higher proportion to be propagated inside the chip.
- a lot of light is absorbed by the epitaxy layer 130 when passing there or by the pad. The light extraction efficiency is reduced obviously.
- LED includes a GaAs substrate 140 mounted on a transparent substrate 110 , an epitaxy layer 130 located on the GaAs substrate 140 , and a scattering mask 120 located on the epitaxy layer 130 .
- a forth ray R 4 from the epitaxy layer 130 emits sideward through a transparent resin 160 . Because the thermal resistance of the transparent substrate 110 is usually higher, it is difficult for an LED to dissipate the heat.
- a back light unit which is one of the main components of liquid crystal display (LCD) needs a light source with the characteristics of high brightness, low power consumption, thinness, and lightness.
- EL Electro luminescence
- CCFL cold cathode fluorescent lamp
- HCFL hot cathode fluorescent lamp
- This disclosure provides a semiconductor light-emitting device and an encapsulant structure for reducing the light absorbed by the semiconductor stack.
- This semiconductor light-emitting device includes a light-emitting structure and an external optical element.
- the light-emitting structure includes a semiconductor stack and a transparent substrate.
- the external optical element is connected to the periphery of the light-emitting structure, and the refractive index of the external optical element is larger than or about the same as that of the transparent substrate, or in-between that of the transparent substrate and encapsulant.
- the light-emitting structure receiving a forward voltage can emit light, and a portion of the light passes the transparent substrate and emits into the external optical element.
- the external optical element can increase the light extraction efficiency of the light-emitting structure.
- this semiconductor light-emitting device is especially suitable for a semiconductor light-emitting structure having a p-type and/or an n-type light-impermissible pad occupying more than 50% of the surface area of the light-emitting structure.
- This disclosure disclosed an encapsulant structure including at least an external optical element and a submount that is especially suitable to a light-emitting structure.
- the external optical element is mounted on the submount.
- a reflective layer can be set between the external optical element and the submount optionally.
- FIGS. 1 ⁇ 1 C show a schematic diagram of a light path in a conventional LED.
- FIG. 2A shows a schematic diagram of a semiconductor light-emitting device in accordance with an embodiment.
- FIG. 2B shows a sectional diagram of the semiconductor light-emitting device of FIG. 2A .
- FIG. 2C shows a schematic diagram of a light path of the semiconductor light-emitting device of FIG. 2A .
- FIG. 2D shows a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment.
- FIG. 2E shows a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment.
- FIGS. 3A ⁇ 3 F show a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment.
- FIG. 4A shows a schematic diagram of a semiconductor light-emitting device in accordance with an embodiment.
- FIG. 4B shows a sectional diagram of the semiconductor light-emitting device of FIG. 4A .
- FIG. 5A shows a schematic diagram of an encapsulant structure in accordance with an embodiment.
- FIG. 5B shows a sectional diagram of the encapsulant structure of FIG. 5A .
- FIG. 6A shows a schematic diagram of an encapsulant structure in accordance with another embodiment.
- FIG. 6B shows a sectional diagram of the encapsulant structure of FIG. 6A .
- FIG. 6C shows a schematic diagram of an encapsulant structure in accordance with another embodiment.
- FIG. 6D shows a sectional diagram of the encapsulant structure of FIG. 6C .
- a semiconductor light-emitting device 200 includes an external optical element 210 and a light-emitting structure 220 .
- the light-emitting structure 220 such as an LED chip includes a semiconductor stack 221 and a transparent substrate 222 , wherein the semiconductor stack 221 includes an active layer 223 .
- the active layer 223 emits light.
- the external optical element 210 surrounds the light-emitting structure 220 , connects thereto by its inner wall, and exposes at least a portion of a top surface or a bottom surface of the light-emitting structure 220 .
- the bottom of the light-emitting structure 220 contacts with the environmental medium or a heat dissipation material (not shown here) for improving heat dissipation by thermal convection and thermal conduction.
- the external optical element 210 can be formed simultaneously during the manufacturing process of the light-emitting structure 220 or independently from that. For example, after the external optical element 210 is formed independently, it is attached to the light-emitting structure 220 .
- the material of the active layer 223 includes but unrestricted to the III-V group, the II-VI group, the IV group of the semiconductor, or the combination thereof, such as AlGaInP, AlN, GaN, AlGaN, InGaN, AlInGaN, or CdZnSe.
- the refractive index of the external optical element 210 n o is larger than or about the same as the refractive index of the transparent substrate 222 n s , or in-between that of the transparent substrate 222 n s and the encapsulant material n e .
- the light reflected to the semiconductor stack 221 is reduced relatively. Namely, the amount of the light absorbed by the semiconductor stack 221 is reduced.
- a fifth ray R 5 emits to the bottom of the transparent substrate 222 from the active layer 223 and then is reflected to the external optical element 210 . Because the refractive index of the external optical element 210 n o is larger than or about the same as the refractive index of the transparent substrate 222 n s , the fifth ray R 5 is hard to be reflected to the semiconductor stack 221 as conventional technology. Thus, there is more probability for the fifth ray R 5 to enter the external optical element 210 and less probability to be absorbed by the semiconductor stack 221 .
- a first surface 211 and a second surface 212 of the external optical element 210 are flat.
- a problem of total reflection might occur because of the difference of the refractive indices thereof. If the interface is rough or uneven, the light can be scattered on this interface to reduce the chance of the total reflection, and the light extraction efficiency increases accordingly.
- rough surfaces or uneven surfaces are formed on the first surface 211 and the second surface 212 to increase the light extraction efficiency, preferably.
- the rough surface or the uneven surface can be regular or irregular pattern such as Fresnel surface, depending on purposes.
- the electrodes or pads of the embodiments mentioned above are on the same side of the light-emitting structure. However, FIG. 2E shows that the electrodes or pads are unrestricted to locate on the same side of the light-emitting structure.
- the transparent substrate 222 includes a top surface and a bottom surface having different areas from each other to form some special shapes such as inverted-trapezoid, trapezoid, or frustum.
- the external optical element 210 can be one of the shapes mentioned above or the combination thereof.
- the second surface 312 is a ramp, or the first surface 311 and the second surface 312 are both the ramps.
- the first surface 311 and the second surface 312 can be the rough surfaces or uneven surfaces, too.
- the external optical element 210 can surround the periphery of the light-emitting structure 220 or connect to at least one side thereof.
- a method of manufacturing the embodiments mentioned above includes forming a through hole slightly larger than the transparent substrate 222 in the center of the external optical element 210 by laser, and connecting the light-emitting structure 220 to the external optical element 210 by glue bonding.
- the glue layer 270 is transparent relative to the light from the transparent substrate 222 , and the refractive index thereof n b is about the same as that of the transparent substrate 222 n s or in-between that of the transparent substrate 222 n s and the encapsulant n o .
- the material of the transparent substrate 222 can be conductive or insulated, for example, SiC, GaP, GaAsP, sapphire, or ZnSe.
- the glue layer 270 for the glue bonding includes but unrestricted to SOG, silicone, BCB, epoxy, polyimide, PFCB, Su8, resin, or the combination thereof.
- the material of the external optical element 210 includes but unrestricted to SiC, GaP, CVD diamond, diamond, resin, ZrO 2 , spinel, AlON, or sapphire, wherein the resin is Su8 preferably.
- the external optical element 210 is resin, it can surround the lateral wall of the light-emitting structure 220 directly.
- the light-emitting structure 220 is inserted into a resin layer, and the extra resin layer on the bottom of the light-emitting structure 220 is then removed.
- a plurality of holes can be formed in the semiconductor stack above the growth substrate and the resin layers are formed in the plurality of holes. The semiconductor stack 221 and the growth substrate are cut from the holes and then the growth substrate is removed to form the LED chips.
- the external optical element 210 surrounding the light-emitting structure 220 is formed.
- the growth substrate is transparent, it can be kept to cooperate with the external optical element 210 surrounding the periphery of the light-emitting structure 220 to increase the probability for the light to leave the chip.
- the external optical element 210 can also surround the periphery of the semiconductor stack 221 and the growth substrate.
- the resin layers having different refractive indices can be formed in the hole to reduce the total reflection and increase the probability for light to leave the chips.
- the refractive index of the resin is larger than or about the same as that of the transparent substrate 222 or in-between that of the transparent substrate 222 and the encapsulant.
- n s ⁇ n b ⁇ n o or n s ⁇ n o there is no total reflection occurred inside the above-mentioned structure, especially when n s ⁇ n b ⁇ n o or n s ⁇ n o .
- the light extraction efficiency can be increased.
- n o is slightly less than or equal to n s and n b is slightly larger than or equal to n e
- n o is slightly larger than n e
- the probability of the light emitting out via the external optical element 210 is increased as well.
- n b is slightly less than or equal to n o and n o is slightly less than or equal to n s , but n b is slightly larger than n e and the thickness of the glue is quite thin, the light extraction efficiency also can be increased.
- this structure is suitable to an LED chip of which over 50% of the surface area of the light-emitting structure 220 is covered by a p-type pad 230 and an n-type pad 240 .
- the p-type pad 230 and the n-type pad 240 include a first reflective layer 250 and a second reflective layer 260 located on the bottom thereof to reflect a seventh ray R 7 emitting to the pads to the transparent substrate 222 or the external optical element 210 , so the probability of the pads absorption is decreased and the light extraction efficiency is increased.
- this embodiment is also suitable to the pads that are light-impermissible electrodes or other replaceable structures having the same function.
- an encapsulant structure 300 is also suitable to an encapsulant structure.
- an encapsulant structure 300 especially for the light-emitting structure 200 , at least includes a submount 340 and the external optical element 210 .
- the external optical element 210 is located on the submount 340 and the submount 340 can include at least a lead 320 optionally.
- a third reflective layer 310 or a Lambertian Surface can be formed for reflection under the external optical element 210 optionally.
- an encapsulant material covers the encapsulant structure 300 mentioned above.
- a wavelength-converted material can be included in the optical element 210 or the encapsulant material (not shown here), or cover the LED chip for converting the original color light thereof.
- the wavelength-converted material can be phosphor, organic semiconductor, II-VI group or III-V group of the semiconductor, nanometer crystal, dyestuff, or polymer.
- the external optical element 210 can be set on the submount 340 and then connected to the light-emitting structure 220 .
- the commercial LED chips available in the market can be applied to the light-emitting device as shown in abovementioned embodiments.
- the materials of the first reflective layer 250 , the second reflective layer 260 , and the third reflective layer 310 include metal, oxide, the combination thereof, or other reflective materials. Preferably, they include but unrestricted to In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Ge, Cu, Ni, AuBe, AuGe, AuZn, PbSn, SiN x , SiO 2 , Al 2 O 3 , TiO 2 , or MgO.
- a reflective structure 330 is equipped with the external optical element 210 of the abovementioned encapsulant structure 300 .
- the reflective structure 330 includes an inner wall 331 which can reflect the light emitting to the reflective structure 330 .
- the light emitting upwards is reflected by the first reflective layer 250 and the second reflective layer 260 under the p-type pad 230 and the n-type pad 240 .
- the light emitting downwards hits the reflective layer 310 and then is also reflected. Consequently, the light returns to the third surface 213 and leaves there. Referring to FIGS.
- the lateral surfaces of the transparent substrate 222 and the semiconductor stack 221 are connected to the inner wall 331 of the reflective structure 330 by the glue layer 270 .
- Other surfaces of the transparent substrate 222 and the semiconductor stack 221 disconnected to the inner wall 331 are connected to the external optical element 210 .
- the total reflection can be formed on the interface of the transparent substrate 222 and the glue layer 270 .
- the light from the light-emitting structure 220 all emits out via the external optical element 210 .
- n o >n e the light extraction efficiency increases. In other words, this structure can control the direction of the light leaving the light-emitting structure 220 .
- This disclosure can be modified or changed under this inventive spirit.
- the inner wall 311 of the reflective structure 330 includes a reflective layer such as a DBR or a Lambertian Surface for reflecting the light emitting to the reflective structure 330 .
- the material of the reflective structure 330 includes metal, oxide, the combination thereof, or other reflective material. Preferably, it includes but unrestricted to In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Ge, Cu, Ni, AuBe, AuGe, AuZn, PbSn, SiN x , SiO 2 , Al 2 O 3 , TiO 2 , or MgO.
- This disclosure qualifies the characteristics of high brightness, low power consumption, thinness, and lightness and is applicable to BLU. In addition, this disclosure is also applicable to all kinds of the displays to become the main component.
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Abstract
This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.
Description
- This application is a Continuation Application of U.S. application Ser. No. 12/155,595 filed on Jun. 6, 2008, which claims the right of priority based on Taiwan Application Serial Number 096120457, filed on Jun. 6, 2007, the disclosure of which is incorporated herein by reference in its entirety.
- The present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device including an external optical element. The refractive index of the external optical element is larger than or about the same as that of a transparent substrate of a light-emitting structure, or in-between that of the transparent substrate and an encapsulant.
- A light emitting diode (LED) is a solid-state semiconductor element including at least a p-n junction. The p-n junction is formed between a p-type and an n-type semiconductor layers. When the p-n junction receives a suitable forward voltage, the holes of the p-type semiconductor layer and the electrons of the n-type semiconductor layer are combined to emit light. Generally, the region emitting light is called a light-emitting region.
- The light emitted from the light-emitting region is forwarded omni-directionally. However, a user usually needs only the light forwarding to a specific direction. Consequently, a reflective layer or a mirror for reflecting a portion of the light is adopted. Besides, the difference of the refractive indices between the LED's material and environmental medium can result in total reflection of the light emitting to the boundary of the LED in a specific incident angle. In general, it is unavoidable for each kind of the reflective light mentioned above to travel through inside the LED.
- Referring to
FIG. 1A , a knownLED 100 includes asubstrate 110 and anepitaxy layer 130. Theepitaxy layer 130 includes anactive layer 131 which can emit light omni-directionally when receiving a forward voltage. Areflective layer 150 is formed between theepitaxy layer 130 and thesubstrate 110 to reflect the light from theactive layer 131. - A first ray R1 emits to the upside of the
LED 100. When the refractive index of the environmental medium is less than that of theLED 100 and the incident angle is larger than the critical angle, the first ray R1 can be reflected totally at the boundary of theLED 100 and then return to the inside thereof. When the first ray R1 passes theactive layer 131, a portion of the first ray R1 is absorbed by theactive layer 131, and the other portion of the first ray R1 that is not absorbed emits to thereflective layer 150 and is reflected upward to pass theactive layer 131 again. Thus, the first ray R1 resonates in theepitaxy layer 130, passes theactive layer 131 repetitiously, and then is absorbed gradually. Under the similar mechanism, a second ray R2 emitting to the downside of theLED 100 also resonates in theepitaxy layer 130, passes theactive layer 131 repetitiously, and then is absorbed gradually. - Referring to
FIG. 1B , it shows no reflective layer is formed between thesubstrate 110 and theepitaxy layer 130 of theLED 100, and thesubstrate 110 is transparent relative to the light emitted from theactive layer 131. The downside of thesubstrate 110 can attach to a mirror (not shown here) or air only. If a third ray R3 reflected from the bottom of thesubstrate 110 emits to the lateral wall of thesubstrate 110 with an incident angle θI larger than a critical angle θC, it can be reflected into theepitaxy layer 130 and be absorbed by theactive layer 131. As mentioned above, the third ray R3 could be reflected totally at the boundary of theepitaxy layer 130 and then return to the inside thereof. Moreover, it could resonate in theepitaxy layer 130, pass the active 131 repetitiously, and then be absorbed thereby. The light absorption in theactive layer 131 reduces the light extraction efficiency of theLED 100 to some extent. Especially for small chip like 8 mil or 10 mil which has larger area ratio occupied by the pad, light can be reflected by the pad more easily and has higher proportion to be propagated inside the chip. Thus, a lot of light is absorbed by theepitaxy layer 130 when passing there or by the pad. The light extraction efficiency is reduced obviously. - Referring to
FIG. 1C , LED includes aGaAs substrate 140 mounted on atransparent substrate 110, anepitaxy layer 130 located on theGaAs substrate 140, and ascattering mask 120 located on theepitaxy layer 130. A forth ray R4 from theepitaxy layer 130 emits sideward through atransparent resin 160. Because the thermal resistance of thetransparent substrate 110 is usually higher, it is difficult for an LED to dissipate the heat. - In the aspect of the application of LED, for example, a back light unit (BLU) which is one of the main components of liquid crystal display (LCD) needs a light source with the characteristics of high brightness, low power consumption, thinness, and lightness. Beside the conventional Electro luminescence (EL), cold cathode fluorescent lamp (CCFL) and hot cathode fluorescent lamp (HCFL), LED is also one of the point light sources employed by the BLU.
- This disclosure provides a semiconductor light-emitting device and an encapsulant structure for reducing the light absorbed by the semiconductor stack.
- This semiconductor light-emitting device includes a light-emitting structure and an external optical element. The light-emitting structure includes a semiconductor stack and a transparent substrate. The external optical element is connected to the periphery of the light-emitting structure, and the refractive index of the external optical element is larger than or about the same as that of the transparent substrate, or in-between that of the transparent substrate and encapsulant. The light-emitting structure receiving a forward voltage can emit light, and a portion of the light passes the transparent substrate and emits into the external optical element. The external optical element can increase the light extraction efficiency of the light-emitting structure. The bottom of the light-emitting structure contacts with the environmental medium or the heat dissipation material for increasing thermal efficiency by thermal convection and thermal conduction. In addition, this semiconductor light-emitting device is especially suitable for a semiconductor light-emitting structure having a p-type and/or an n-type light-impermissible pad occupying more than 50% of the surface area of the light-emitting structure.
- This disclosure disclosed an encapsulant structure including at least an external optical element and a submount that is especially suitable to a light-emitting structure. The external optical element is mounted on the submount. A reflective layer can be set between the external optical element and the submount optionally.
-
FIGS. 1 ˜1C show a schematic diagram of a light path in a conventional LED. -
FIG. 2A shows a schematic diagram of a semiconductor light-emitting device in accordance with an embodiment. -
FIG. 2B shows a sectional diagram of the semiconductor light-emitting device ofFIG. 2A . -
FIG. 2C shows a schematic diagram of a light path of the semiconductor light-emitting device ofFIG. 2A . -
FIG. 2D shows a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment. -
FIG. 2E shows a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment. -
FIGS. 3A ˜3F show a sectional diagram of the semiconductor light-emitting device in accordance with another embodiment. -
FIG. 4A shows a schematic diagram of a semiconductor light-emitting device in accordance with an embodiment. -
FIG. 4B shows a sectional diagram of the semiconductor light-emitting device ofFIG. 4A . -
FIG. 5A shows a schematic diagram of an encapsulant structure in accordance with an embodiment. -
FIG. 5B shows a sectional diagram of the encapsulant structure ofFIG. 5A . -
FIG. 6A shows a schematic diagram of an encapsulant structure in accordance with another embodiment. -
FIG. 6B shows a sectional diagram of the encapsulant structure ofFIG. 6A . -
FIG. 6C shows a schematic diagram of an encapsulant structure in accordance with another embodiment. -
FIG. 6D shows a sectional diagram of the encapsulant structure ofFIG. 6C . - Referring to
FIGS. 2A ˜2B, a semiconductor light-emittingdevice 200 includes an externaloptical element 210 and a light-emittingstructure 220. The light-emittingstructure 220 such as an LED chip includes asemiconductor stack 221 and atransparent substrate 222, wherein thesemiconductor stack 221 includes anactive layer 223. When a forward voltage is applied to the light-emittingstructure 220, theactive layer 223 emits light. The externaloptical element 210 surrounds the light-emittingstructure 220, connects thereto by its inner wall, and exposes at least a portion of a top surface or a bottom surface of the light-emittingstructure 220. The bottom of the light-emittingstructure 220 contacts with the environmental medium or a heat dissipation material (not shown here) for improving heat dissipation by thermal convection and thermal conduction. The externaloptical element 210 can be formed simultaneously during the manufacturing process of the light-emittingstructure 220 or independently from that. For example, after the externaloptical element 210 is formed independently, it is attached to the light-emittingstructure 220. - The material of the
active layer 223 includes but unrestricted to the III-V group, the II-VI group, the IV group of the semiconductor, or the combination thereof, such as AlGaInP, AlN, GaN, AlGaN, InGaN, AlInGaN, or CdZnSe. The refractive index of the external optical element 210 no is larger than or about the same as the refractive index of the transparent substrate 222 ns, or in-between that of the transparent substrate 222 ns and the encapsulant material ne. Thus, it is more probability that the light passes thetransparent substrate 222 and emits out from the externaloptical element 210. The light reflected to thesemiconductor stack 221 is reduced relatively. Namely, the amount of the light absorbed by thesemiconductor stack 221 is reduced. - Referring to
FIG. 2C , a fifth ray R5 emits to the bottom of thetransparent substrate 222 from theactive layer 223 and then is reflected to the externaloptical element 210. Because the refractive index of the external optical element 210 no is larger than or about the same as the refractive index of the transparent substrate 222 ns, the fifth ray R5 is hard to be reflected to thesemiconductor stack 221 as conventional technology. Thus, there is more probability for the fifth ray R5 to enter the externaloptical element 210 and less probability to be absorbed by thesemiconductor stack 221. - In this embodiment, a
first surface 211 and asecond surface 212 of the externaloptical element 210 are flat. However, when the light emits to the interface between the externaloptical element 210 and the environment air, a problem of total reflection might occur because of the difference of the refractive indices thereof. If the interface is rough or uneven, the light can be scattered on this interface to reduce the chance of the total reflection, and the light extraction efficiency increases accordingly. Referring toFIG. 2D , rough surfaces or uneven surfaces are formed on thefirst surface 211 and thesecond surface 212 to increase the light extraction efficiency, preferably. The rough surface or the uneven surface can be regular or irregular pattern such as Fresnel surface, depending on purposes. The electrodes or pads of the embodiments mentioned above are on the same side of the light-emitting structure. However,FIG. 2E shows that the electrodes or pads are unrestricted to locate on the same side of the light-emitting structure. - In another embodiment, the
transparent substrate 222 includes a top surface and a bottom surface having different areas from each other to form some special shapes such as inverted-trapezoid, trapezoid, or frustum. To increase the light extraction efficiency, the externaloptical element 210 can be one of the shapes mentioned above or the combination thereof. - Referring to
FIG. 3A , afirst surface 311 inclined an angle θI relative to asecond surface 312 so a sixth ray enters the range of the critical angle θC more easily. In addition, referring toFIGS. 3B-3F , thesecond surface 312 is a ramp, or thefirst surface 311 and thesecond surface 312 are both the ramps. To increase the light extraction efficiency, thefirst surface 311 and thesecond surface 312 can be the rough surfaces or uneven surfaces, too. Moreover, the externaloptical element 210 can surround the periphery of the light-emittingstructure 220 or connect to at least one side thereof. - If the external
optical element 210 is sapphire, a method of manufacturing the embodiments mentioned above includes forming a through hole slightly larger than thetransparent substrate 222 in the center of the externaloptical element 210 by laser, and connecting the light-emittingstructure 220 to the externaloptical element 210 by glue bonding. Theglue layer 270 is transparent relative to the light from thetransparent substrate 222, and the refractive index thereof nb is about the same as that of the transparent substrate 222 ns or in-between that of the transparent substrate 222 ns and the encapsulant no. - The material of the
transparent substrate 222 can be conductive or insulated, for example, SiC, GaP, GaAsP, sapphire, or ZnSe. Theglue layer 270 for the glue bonding includes but unrestricted to SOG, silicone, BCB, epoxy, polyimide, PFCB, Su8, resin, or the combination thereof. The material of the externaloptical element 210 includes but unrestricted to SiC, GaP, CVD diamond, diamond, resin, ZrO2, spinel, AlON, or sapphire, wherein the resin is Su8 preferably. - If the external
optical element 210 is resin, it can surround the lateral wall of the light-emittingstructure 220 directly. Alternatively, the light-emittingstructure 220 is inserted into a resin layer, and the extra resin layer on the bottom of the light-emittingstructure 220 is then removed. In another embodiment, a plurality of holes can be formed in the semiconductor stack above the growth substrate and the resin layers are formed in the plurality of holes. Thesemiconductor stack 221 and the growth substrate are cut from the holes and then the growth substrate is removed to form the LED chips. Thus, the externaloptical element 210 surrounding the light-emittingstructure 220 is formed. However, if the growth substrate is transparent, it can be kept to cooperate with the externaloptical element 210 surrounding the periphery of the light-emittingstructure 220 to increase the probability for the light to leave the chip. Moreover, the externaloptical element 210 can also surround the periphery of thesemiconductor stack 221 and the growth substrate. Furthermore, by the method mentioned above, the resin layers having different refractive indices can be formed in the hole to reduce the total reflection and increase the probability for light to leave the chips. Preferably, the refractive index of the resin is larger than or about the same as that of thetransparent substrate 222 or in-between that of thetransparent substrate 222 and the encapsulant. Ideally, when ns≤nb≤no or ns≤no, there is no total reflection occurred inside the above-mentioned structure, especially when ns≤nb≤no or ns≤no. In another aspect, when no is slightly less than ns and no is slightly larger than ne, the light extraction efficiency can be increased. When no is slightly less than or equal to ns and nb is slightly larger than or equal to ne, but no is slightly larger than ne, the probability of the light emitting out via the externaloptical element 210 is increased as well. Similarly, when nb is slightly less than or equal to no and no is slightly less than or equal to ns, but nb is slightly larger than ne and the thickness of the glue is quite thin, the light extraction efficiency also can be increased. - In another aspect, as the market demand and the cost are concerned, the dimension of the LED chip is minified gradually. However, the dimension of the pad is hardly changed. Therefore, the ratio of the surface area of the light-emitting
structure 220 covered by the pad increases. Since the pad is light-impermissible, the light will be blocked by the pads and is not able to leave the chip. Referring toFIG. 4A , this structure is suitable to an LED chip of which over 50% of the surface area of the light-emittingstructure 220 is covered by a p-type pad 230 and an n-type pad 240. Referring toFIG. 4B , the p-type pad 230 and the n-type pad 240 include a firstreflective layer 250 and a secondreflective layer 260 located on the bottom thereof to reflect a seventh ray R7 emitting to the pads to thetransparent substrate 222 or the externaloptical element 210, so the probability of the pads absorption is decreased and the light extraction efficiency is increased. With the same concept, this embodiment is also suitable to the pads that are light-impermissible electrodes or other replaceable structures having the same function. - The external
optical element 210 mentioned above is also suitable to an encapsulant structure. Referring toFIGS. 5A-5B , anencapsulant structure 300, especially for the light-emittingstructure 200, at least includes asubmount 340 and the externaloptical element 210. The externaloptical element 210 is located on thesubmount 340 and thesubmount 340 can include at least a lead 320 optionally. A thirdreflective layer 310 or a Lambertian Surface can be formed for reflection under the externaloptical element 210 optionally. Then, an encapsulant material covers theencapsulant structure 300 mentioned above. A wavelength-converted material can be included in theoptical element 210 or the encapsulant material (not shown here), or cover the LED chip for converting the original color light thereof. The wavelength-converted material can be phosphor, organic semiconductor, II-VI group or III-V group of the semiconductor, nanometer crystal, dyestuff, or polymer. During the encapsulating process, the externaloptical element 210 can be set on thesubmount 340 and then connected to the light-emittingstructure 220. Thus, the commercial LED chips available in the market can be applied to the light-emitting device as shown in abovementioned embodiments. - The materials of the first
reflective layer 250, the secondreflective layer 260, and the thirdreflective layer 310 include metal, oxide, the combination thereof, or other reflective materials. Preferably, they include but unrestricted to In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Ge, Cu, Ni, AuBe, AuGe, AuZn, PbSn, SiNx, SiO2, Al2O3, TiO2, or MgO. - Referring to
FIGS. 6A-6B , areflective structure 330 is equipped with the externaloptical element 210 of theabovementioned encapsulant structure 300. Thereflective structure 330 includes aninner wall 331 which can reflect the light emitting to thereflective structure 330. The light emitting upwards is reflected by the firstreflective layer 250 and the secondreflective layer 260 under the p-type pad 230 and the n-type pad 240. The light emitting downwards hits thereflective layer 310 and then is also reflected. Consequently, the light returns to thethird surface 213 and leaves there. Referring toFIGS. 6C-6D , the lateral surfaces of thetransparent substrate 222 and thesemiconductor stack 221 are connected to theinner wall 331 of thereflective structure 330 by theglue layer 270. Other surfaces of thetransparent substrate 222 and thesemiconductor stack 221 disconnected to theinner wall 331 are connected to the externaloptical element 210. When nb<<ns, the total reflection can be formed on the interface of thetransparent substrate 222 and theglue layer 270. Thus, the light from the light-emittingstructure 220 all emits out via the externaloptical element 210. Moreover, when no>ne, the light extraction efficiency increases. In other words, this structure can control the direction of the light leaving the light-emittingstructure 220. This disclosure can be modified or changed under this inventive spirit. - The
inner wall 311 of thereflective structure 330 includes a reflective layer such as a DBR or a Lambertian Surface for reflecting the light emitting to thereflective structure 330. The material of thereflective structure 330 includes metal, oxide, the combination thereof, or other reflective material. Preferably, it includes but unrestricted to In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Ge, Cu, Ni, AuBe, AuGe, AuZn, PbSn, SiNx, SiO2, Al2O3, TiO2, or MgO. - This disclosure qualifies the characteristics of high brightness, low power consumption, thinness, and lightness and is applicable to BLU. In addition, this disclosure is also applicable to all kinds of the displays to become the main component.
- It should be noted that the proposed various embodiments are not for the purpose to limit the scope of the invention. Any possible modifications without departing from the spirit of the invention are covered by the appended claims.
Claims (7)
1. A semiconductor device, comprising:
a submount comprising a first top surface, a first bottom surface, and an outmost side surface;
a light-emitting structure disposed on the submount, and having a pad;
a lead comprising a first portion and a second portion, wherein the first portion is exposed on the first top surface, and the second portion is connected to the first portion and covers the outmost side surface from the first top surface to the first bottom surface; and
an optical element surrounding the light-emitting structure in a configuration of exposing the pad and devoid of laterally contacting the second portion.
2. The semiconductor device of claim 1 , further comprising an encapsulant material covering the submount, light-emitting structure, and the optical element.
3. The semiconductor device of claim 2 , wherein the encapsulant material is connected to the light-emitting structure.
4. The semiconductor device of claim 2 , wherein the light-emitting structure comprises a second top surface, the encapsulant material connects to the second top surface.
5. The semiconductor device of claim 1 , further comprising a reflective structure formed between the optical element and the submount.
6. The semiconductor device of claim 1 , wherein the second portion is substantially perpendicular to the first portion.
7. The semiconductor device of claim 1 , wherein the optical element is not directly connected to the submount.
Priority Applications (1)
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US16/806,816 US20200274041A1 (en) | 2007-06-06 | 2020-03-02 | Semiconductor light emitting device |
Applications Claiming Priority (6)
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TW96120457 | 2007-06-06 | ||
TW096120457A TWI423467B (en) | 2007-06-06 | 2007-06-06 | Semiconductor light emitting device |
US12/155,595 US7884380B2 (en) | 2007-06-06 | 2008-06-06 | Semiconductor light emitting device |
US12/984,184 US8148196B2 (en) | 2007-06-06 | 2011-01-04 | Semiconductor light emitting device |
US14/151,887 USRE47892E1 (en) | 2007-06-06 | 2014-01-10 | Semiconductor light emitting device |
US16/806,816 US20200274041A1 (en) | 2007-06-06 | 2020-03-02 | Semiconductor light emitting device |
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US14/151,887 Continuation USRE47892E1 (en) | 2007-06-06 | 2014-01-10 | Semiconductor light emitting device |
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US14/151,887 Active USRE47892E1 (en) | 2007-06-06 | 2014-01-10 | Semiconductor light emitting device |
US16/806,816 Abandoned US20200274041A1 (en) | 2007-06-06 | 2020-03-02 | Semiconductor light emitting device |
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US12/984,184 Ceased US8148196B2 (en) | 2007-06-06 | 2011-01-04 | Semiconductor light emitting device |
US14/151,887 Active USRE47892E1 (en) | 2007-06-06 | 2014-01-10 | Semiconductor light emitting device |
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JP5343831B2 (en) * | 2009-04-16 | 2013-11-13 | 日亜化学工業株式会社 | Light emitting device |
US8455882B2 (en) * | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
DE102012102114B4 (en) * | 2012-03-13 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting semiconductor component, lighting device and display device |
TWI552391B (en) | 2014-03-06 | 2016-10-01 | 隆達電子股份有限公司 | Comprehensive light-emitting diode device and lighting-module |
JP2017130610A (en) * | 2016-01-22 | 2017-07-27 | ソニー株式会社 | Image sensor, manufacturing method, and electronic apparatus |
KR20190037741A (en) * | 2017-09-29 | 2019-04-08 | 서울반도체 주식회사 | Light emitting diode, light emitting diode module and displace device having the same |
US10658558B2 (en) * | 2017-10-10 | 2020-05-19 | Lumileds Llc | LED package including converter confinement |
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JPS5570080A (en) | 1978-11-21 | 1980-05-27 | Nec Corp | Preparation of luminous display device |
JPH06166213A (en) | 1992-11-30 | 1994-06-14 | Kyocera Corp | Led array |
JPH0738153A (en) | 1993-07-20 | 1995-02-07 | Sharp Corp | Semiconductor light emitting element, optical fiber module device, and semiconductor light emitting element display equipment |
EP0898345A3 (en) * | 1997-08-13 | 2004-01-02 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
WO2001022545A1 (en) * | 1999-09-22 | 2001-03-29 | Mitsubishi Chemical Corporation | Luminous element and luminous element module |
US7009213B2 (en) | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
JP4896383B2 (en) | 2003-09-25 | 2012-03-14 | パナソニック株式会社 | LED light source and manufacturing method thereof |
US7285802B2 (en) * | 2004-12-21 | 2007-10-23 | 3M Innovative Properties Company | Illumination assembly and method of making same |
TWI308396B (en) | 2005-01-21 | 2009-04-01 | Epistar Corp | Light emitting diode and fabricating method thereof |
TWI247441B (en) | 2005-01-21 | 2006-01-11 | United Epitaxy Co Ltd | Light emitting diode and fabricating method thereof |
WO2007088909A1 (en) * | 2006-01-31 | 2007-08-09 | Kyocera Corporation | Light emitting apparatus and light emitting module |
JP2006310887A (en) | 2006-07-25 | 2006-11-09 | Nippon Leiz Co Ltd | Method of manufacturing light source device |
JP2008091818A (en) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | Lead frame for optical semiconductor device, optical semiconductor device using it, and these manufacturing methods |
US7732234B2 (en) * | 2007-02-15 | 2010-06-08 | Hymite A/S | Fabrication process for package with light emitting device on a sub-mount |
JP2009004625A (en) * | 2007-06-22 | 2009-01-08 | Sanken Electric Co Ltd | Semiconductor light emitting device |
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US8148196B2 (en) | 2012-04-03 |
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USRE47892E1 (en) | 2020-03-03 |
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