In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.
In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not entirely reflect the actual size.
Hereinafter, light emitting devices according to embodiments will be described in detail with reference to the accompanying drawings.
1 is a perspective view illustrating a light emitting device according to a first embodiment, and FIG. 2 is a plan view seen from the top side of FIG. 1.
1 and 2, the light emitting device 100 includes a light emitting chip 111 for emitting light and a sheet member 200 for wavelength converting a part of the emitted light.
The light emitting chip 111 may include at least an active layer, and may emit light in the ultraviolet band to the light in the visible band according to the compound composition of the active layer. The active layer may be formed of at least one of a single quantum well structure, a multi quantum well structure, a quantum line structure, and a quantum dot structure. The active layer comprises a barrier layer / well layer pair, for example, the barrier layer / well layer pair is AlGaN / GaN, InGaN / GaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, and AllnGaP / It may be implemented using at least one of InGaP.
In addition, the active layer includes a group III-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x <1, 0≤y <1, 0≤x + y≤1), x By adjusting the composition ratio of, y and the thickness of each layer, the band gap and wavelength can be adjusted. The active layer may change the emission wavelength from about 365nm to 650nm arbitrarily. Hereinafter, for convenience of explanation, the emission wavelength of the light emitting chip 111 is preferably set to 400 nm or more and 530 nm or less, and is set to 420 nm or more and 490 nm or less. It is more preferable. In addition, in order to excite light through the phosphor of the support member, it is more preferable to set the emission wavelength of the light emitting chip 111 to 450 nm or more and 475 nm or less.
The light emitting chip 111 may be formed to have a thickness T1 of several hundred μm, and the length X1 of the first direction and the length Y1 of the second direction may be the same or different as shown in FIG. 2. It is not limited.
The sheet member 200 is disposed on the light emitting chip 111 and includes at least one first layer 211 and at least one second layer 212. Any one of the first layer 211 and the second layer 212 may be arranged in a greater number than other layers.
The sheet member 200 may be formed of a light transmissive resin material such as silicon or epoxy, and the light transmissive resin material may have a refractive index lower than that of the semiconductor material of the light emitting chip 111.
A light-transmissive adhesive layer, for example, an epoxy or silicone resin-based material may be disposed between the sheet member 200 and the light emitting chip 111 to attach the sheet member 200 to the light emitting chip 111. .
The sheet member 200 includes a plurality of first layers 211 and a plurality of second layers 212 that are erected in the vertical direction and alternately arranged in the horizontal direction. The vertical direction may be a thickness direction of the light emitting chip 111, and the horizontal direction may be a first direction X which is a direction perpendicular to the thickness direction of the light emitting chip 111.
The plurality of first layers 211 may be the same size or at least one layer may have a different size, and the plurality of second layers 212 may have the same size or at least one layer having a different size. Can be.
The first layer 211 may be a phosphor layer containing phosphors, and the second layer 212 may be a light transmitting layer not containing phosphors. Here, the first layer 211 may include at least one kind of phosphor in the light-transmissive resin series, and for example, may include at least one of a red phosphor, a yellow phosphor, and a green phosphor. For example, when the light emitting chip 111 emits blue light, the first layer 211 may include a yellow phosphor or a yellow phosphor and a red phosphor. The phosphor may include at least one of YAG, TAG, Silicate, Nitride, and Oxynitride-based materials, but is not limited thereto.
The phosphor density of at least one of the plurality of first layers 211 may be different from the phosphor density of another layer, but is not limited thereto.
At least one of the plurality of second layers 212 may be a layer having air or a similar medium or a layer made of a light-transmissive resin. At least one of the plurality of second layers 212 may include particles such as a light scattering agent, a phosphor, a diffusing agent, and the like, but is not limited thereto.
The thickness T2 of the sheet member 200 may be set to several tens of micrometers or more for reflection, scattering, and guide of incident light, and is preferably formed to be 0.5 times or more of the thickness T1 of the light emitting chip 111. It may be formed, and more preferably may be formed to 30㎛ or more.
The sheet member 200 may be formed in a polygonal shape when viewed from the top side, for example, may be formed in the same or similar shape as the top surface of the light emitting chip 111. The sheet member 200 may include at least one of a polyhedron shape, a hemispherical shape, a semi-cylindrical shape, a polygonal pyramid shape, and a polygonal pyramid shape.
The width D1 of the first layer 211 of the sheet member 200 may be 700 nm or more. The width D2 of the second layer 212 of the sheet member 200 may be 700 nm or more, and may be the same as or different from the width of the first layer 211. The widths D1 and D2 of the first layer 211 and the second layer 212 may be, for example, 1.5 times or more wider than the wavelength (for example, 450 nm) emitted from the light emitting chip 111. In addition, the width may be substantially wider than the wavelength emitted from the light emitting chip, thereby increasing the light extraction efficiency.
At least one width D1 of the plurality of first layers 211 may have the same width or different widths D2 of the second layer 212. For example, in order to reduce the color conversion efficiency by the phosphor, the width D2 of the second layer 212 may be wider than the width D1 of the first layer 211, and conversely, the color due to the phosphor In order to increase the conversion (or wavelength conversion) efficiency, the width D1 of the first layer 211 may be wider than the width D2 of the second layer 212. The ratio of the table area of the first layer 211 to the table area of the second layer 212 may vary according to the widths D1 and D2 of each layer, and the chromaticity distribution of light is adjusted by adjusting the ratio of the table area. Can be.
The second layer 212 may be disposed between the plurality of first layers 211, and the first layer 211 or the second layer 212 may be disposed on at least one side of the sheet member 200. have.
At least one hole 219 may be formed in the sheet member 200, and the at least one hole 219 is formed at a position corresponding to the pad 119 of the light emitting chip 111 as shown in FIG. 2. Can be. The pads 119 of the light emitting chip 111 may be disposed in one or a plurality, and may be disposed on different planes according to chip types.
The upper surface of the sheet member 200 may be formed as a flat surface, and in order to improve light extraction efficiency, at least one of the upper surface and the side surface may be formed as a rough surface, but is not limited thereto.
Since the sheet member 200 is disposed to be attached to the light emitting chip 111, hot spots can be prevented and light loss can be reduced while facilitating wavelength conversion of light. In addition, a lens having a width about the sheet member 200 may be disposed on the sheet member 200, and the lens may have a structure including at least one of a convex portion and a concave portion.
As illustrated in FIG. 2, a pad 119 may be disposed on the light emitting chip 111, and the pad 119 may be exposed in the hole 219 of the sheet member 200. The pad 119 may be connected to a connection member such as a wire to receive power. The pad 119 may be disposed in the center region or the side region of the light emitting chip 111 to supply and spread current, but is not limited thereto.
The light emitting chip 111 may be supplied with power through another region, for example, a lower portion thereof. As an example, power may be supplied through a conductive member disposed under the light emitting chip 111.
When viewed from an upper surface of the sheet member 200, the width of the first direction X1 is the same as or different from the width of the light emitting chip 111. Preferably, the width of the sheet member 200 may be at least wider than that of the light emitting chip 111. The width of the second direction Y1 may be formed to be the same as or different from the light emitting chip 111 in a direction perpendicular to the first direction.
1 and 2, the first layer 211 and the second layer 212 of the sheet member 200 according to the embodiment are not stacked in a predetermined direction, that is, in the thickness direction of the light emitting chip 111. By alternately stacking and arranging the light emitting chip 111 in the length or width direction, side surfaces of the first layer 211 and the second layer 212 are parallel to at least a flat top surface of the light emitting chip 111. It can be placed upright at an angle of about 90 °. Accordingly, the light incident on the side surfaces of the first layer 211 and the second layer 212 is transmitted to another layer or travels toward the top surface of the sheet member 200.
Light incident on the sheet member 200 may be incident through an upper surface of the light emitting chip 111 or may be incident on a lower surface of the sheet member 200. In the embodiment, light incident on the sheet member 200 from the light emitting chip 111 will be described as an example. The first layer 211 excites the incident light by an internal phosphor to emit light having a different wavelength, and the light incident on the second layer 212 is transmitted to the surface or the first layer 211. Can be converted into light of a different wavelength. The light emitted from the light emitting chip 111 and the light converted by the phosphor in the first layer 211 of the sheet member 200 may be mixed with each other on an optical path to obtain light of a desired color. For example, blue light of the light emitting chip 111 and yellow light or yellow and red light of the phosphor may be mixed and provided as white light.
Here, when there is no second layer 212 of the sheet member 200, the following problem may occur.
As illustrated in FIG. 3, the fluorescent sheet S1 to which the phosphor is added may be provided by stacking a plurality of sheets in a horizontal direction, and may be installed in parallel with the flat upper surface of the light emitting chip 111. Accordingly, when the light L1 emitted from the light emitting chip 111 enters or exits the fluorescent sheet, part of the light L2 is transmitted and the other light L3 passes from the entrance or exit surface of the fluorescent sheet. The reflected light L3 may be reflected to the light emitting chip 111 so that light loss may occur.
As another example, when packaging a resin material in which a phosphor is added on the light emitting chip 111, the light emitted from the light emitting chip 111 is scattered in an arbitrary direction in the resin layer, and the scattered light is Or some light may be reflected and lost.
As another example, when the phosphor is directly applied on the light emitting chip 111, the amount of reflection may be increased by the amount of the applied phosphor, and the light emitted to the outside may be effective light, but the coated phosphor Light reflected by the light proceeds to the light emitting chip 111, and there is a problem that can be lost.
As described above, when the light reflected from the structure to which the phosphor is added travels in a direction opposite to the light extraction direction, light loss may occur. According to the embodiment, all the light transmitted and reflected through the side surfaces of the first layer 211 and the second layer 212 of the sheet member 200 may be advanced in the light extraction direction.
As shown in FIG. 4, light incident on the sheet member 200 may travel to the first layer 211 or the second layer 212. The light L4 traveling to the first layer 211 is transmitted and reflected at the interface between the first layer 211 and the second layer 212, that is, at the side of the first layer 211, and the reflected light is reflected. Light L5 may be transmitted and reflected L6 on the other side. Here, the boundary surfaces of the first layer 211 and the second layer 212 are disposed in the vertical direction, so that the side surfaces of the layers 211 and 212 guide in the light extraction direction irrespective of the angle of incident light. Can be. Accordingly, the first layer 211 and the second layer 212 may be provided in the form of a tunnel to guide the light.
5 is a view illustrating a manufacturing process of the sheet member 200.
Referring to FIG. 5, a resin material in which phosphors are added on the base plate 11 is dispensed and cured to form a first layer 21, and a resin material in which phosphors are not added on the first layer 21. To form a second layer 22 by dispensing and curing. In this manner, the height of alternately stacking the first layer 21 and the second layer 22 becomes the width of the sheet member, and the thickness T2 may be determined by the first cutting line C1. Through this manufacturing process, the sheet member can be manufactured.
The first layer 21 may be formed of a phosphor layer in which phosphors are added to a resin, and the phosphors may include at least one of red, green, blue, and yellow phosphors. The second layer 22 may be formed of a light-transmissive resin layer to which no phosphor is added. A phosphor having a density lower than that of the first layer 21 may be added to the second layer 22, but is not limited thereto.
The widths of the first layer 21 and the second layer 22, that is, the widths D1 and D2 of FIG. 1 may be adjusted, but are not limited thereto.
The manufactured sheet member 200 may be cut along a cutting line to a desired thickness. For example, when cutting with the first cutting line C1, a sheet member having a thickness T1 may be provided. Here, the first cutting line C1 may be used as an upper surface of the sheet member. As another example, when cutting with the second cutting line C2, an interface between the first layer 21 and the second layer 22 may be inclined and may be provided to have a predetermined thickness T2a. In addition, when cutting with the third cutting line C3 with respect to the upper surface of the sheet member, the upper surface of the sheet member may be provided in a triangular shape, and when cutting with the fourth cutting line C4, the upper surface of the sheet member 200 may be It may be provided as an uneven surface. Although the cutting surface has been described as a triangular or uneven surface, hemispherical, concave and convex surfaces may be formed as repeated uneven or inclined surfaces.
The light emitting device may be packaged in various forms, for example, may be packaged as shown in FIGS. 6 to 8.
6 is a view illustrating a light emitting device package in which the light emitting device of FIG. 1 is packaged.
Referring to FIG. 6, the light emitting device package 300 may include a light emitting device 100 including a light emitting chip 111 and a sheet member 200; A first lead electrode 311 in which the light emitting device 100 is disposed; A second lead electrode 312 electrically separated from the first lead electrode 311; A body 310 supporting the first and second lead electrodes 311 and 312; A cavity 313 having an upper portion opened to the body 310; And a resin 320 in the cavity 313.
At least one light emitting device 100 is adhered on the first lead electrode 311 through an adhesive 90. The adhesive 90 is a conductive adhesive, and may electrically connect the light emitting device 100 to the first lead electrode 311.
The second lead electrode 312 may be connected to the light emitting chip 111 by a connection member 305 such as a wire.
The circumferential surface of the cavity 313 is disposed around the light emitting device 100, and the circumferential surface of the cavity 313 is inclined with respect to the bottom surface of the cavity 313 to efficiently reflect light. Can be. As another example, the circumferential surface of the cavity 313 may be disposed perpendicular to the bottom surface of the cavity 313, but is not limited thereto.
The bottom surface of the cavity 313 may have the same length or width in the horizontal and vertical lengths, for example, in the X-axis direction and the Y-axis direction of FIG. 1. A width in the first direction and the second direction of the sheet member 200 may be changed in proportion to the bottom length of the cavity 313.
A resin material 320 is formed in the cavity 313 in which the light emitting device 100 is disposed, and the resin material 320 covers the light emitting chip 111 and the sheet member 200. The sheet member 200 attached to the light emitting chip 111 may be disposed in the resin material 320, that is, at least lower than the top surface of the resin material 320.
The body 310 may include at least one of a silicon material, a synthetic resin material, a metal material, sapphire (Al 2 O 3 ) or a printed circuit board (PCB), but is not limited thereto.
The first lead electrode 311 and the second lead electrode 312 are electrically separated from each other, and provide power to the light emitting chip 111. In addition, the first lead electrode 311 and the second lead electrode 312 may reflect light generated by the light emitting device 100 to increase light efficiency, and heat generated by the light emitting chip 111. It may also play a role in discharging it to the outside.
The lower surfaces of the first lead electrode 311 and the second lead electrode 312 have been described as having a structure disposed on the lower surface of the body 310, but are not limited thereto.
The resin material 320 may be formed of silicon or a resin material having transparency, and may surround and protect the light emitting device 100. In addition, the resin 320 may include a phosphor, but is not limited thereto. In addition, when the phosphor is added to the resin material 320 may be made of the same or different phosphors than the sheet member 200.
The upper surface of the resin material 320 may be formed in a concave shape, a flat shape, or a convex shape, but is not limited thereto. A lens may be further disposed on the resin material 320, and the lens may be made of a material similar to the light transmittance of the resin material 320, and may include, for example, a material such as silicon or epoxy or a material such as glass. Can be.
In the light emitting device 100, the first layer 211 and the second layer 212 perpendicular to the light emitting chip 111 are stacked and alternately arranged in a horizontal direction, thereby emitting the light emitting chip 111 to the upper surface of the light emitting chip 111. In addition to improving the extraction efficiency of the light, the chromaticity distribution can be improved by the phosphors in the first layer 211 spaced apart from each other.
The package of the embodiment has been shown and described in the form of a top view, but by implementing in a side view method has the effect of improving the heat dissipation, conductivity and reflection characteristics as described above.
7 is another example of a light emitting device package packaged with the light emitting device of FIG. 1.
Referring to FIG. 7, the light emitting device package 300A includes a board 330 which is a body having electrodes 331, 332, 333, 334; A light emitting device 100 mounted on the board 330; And a resin material 340 covering the light emitting device 100.
The board 330 may include a body such as a printed circuit board (PCB) having a patterned electrode. However, the printed circuit board may include not only a resin-based PCB, but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), a ceramic PCB, and an FR-4 substrate. It is not limited.
The electrodes 331, 332, 333, 334 may include a first electrode 331 and a second electrode 332 disposed on the board 330; A third electrode 333 and a fourth electrode 334 disposed under the board 330; A first connection member 335 connecting the first electrode 331 and the third electrode 333 to each other; And a second connection member 336 connecting the second electrode 332 and the fourth electrode 334. The first and second connection members 335 and 336 may include via structures.
In addition, a light reflection layer or a material is further formed on the upper surface of the board 330, so that a part of the light reflected from the board 330 may be incident on the protruding region of the sheet member 200, thereby converting the wavelength of the light. Can be placed more widely.
At least one light emitting device 100 may be disposed on the board 330. In the light emitting device 100, the light emitting chip 111 and the sheet member 200 having phosphors are disposed thereon, thereby effectively converting the light emitted from the light emitting chip 111, and improving light loss. It can increase the light extraction efficiency.
The resin material 340 may be formed in a hemispherical shape on the board 100. Concave-convex shape may be formed on the hemispherical surface, but is not limited thereto. For example, the resin material 340 may be formed in a circle or polygonal column shape through a transfer molding process, but is not limited thereto.
There may be no cavity structure as illustrated in FIG. 6 around the board 330, and the amount of light incident on the sheet member 200 may also vary. The sheet member 200 may have a width larger than at least an upper surface of the light emitting chip 111 and may be attached onto the light emitting chip 111. The width of the sheet member 200, for example, the width in the X-axis direction and the Y-axis direction of FIG. 1 may be extended to the outside of the light emitting chip 111, so that the wavelength conversion region of the light may be wider. The sheet member 200 performs wavelength conversion on light emitted in the upward direction of the light emitting chip 111, and may reduce the loss of incident light in the sheet.
8 is a view showing an array of light emitting devices on a board.
Referring to FIG. 8, a plurality of light emitting devices 100 are mounted on the board 330A at predetermined intervals. The light emitting devices 100 may be electrically connected to a patterned electrode on the board 330A, and may be disposed in series or in parallel with each other.
A resin material 341 is formed on the board 330A, and the resin material 341 may be formed to cover the plurality of light emitting devices 100. The resin 341 may protrude in a convex shape in the first region 341A of the light emitting device 110, and may be formed in a concave shape in the second region 341B between the light emitting devices. The resin 341 may be formed in a continuous shape or a discontinuous shape.
9 is a perspective view illustrating a light emitting device according to a second embodiment.
9, in the light emitting device, the sheet member 200 is disposed on the light emitting chip 111.
At least one of the first layer 211 and the second layer 212 of the sheet member 200 may have protrusions P1 and P2 formed on at least one side thereof, and the protrusions P1 and P2 may be formed of at least one side thereof. At least one of a structure protruding from the first layer 211 to the second layer 212 and a structure protruding from the surface of the second layer 212 into the first layer 211 may be included.
The protrusions P1 and P2 may roughly form side surfaces of each of the layers 211 and 212, thereby refracting light traveling toward the side surfaces of the layers 211 and 212, thereby scattering the light. The protrusions P1 and P2 may be further formed on at least one side of the sheet member 200, for example, a side surface, a bottom surface, and an upper surface of the sheet member 200, but are not limited thereto. .
The protrusions P1 and P2 may have a hemispherical shape or a polygonal shape, and the protruding height may be greater than the width D1 of the first layer 211 or the width D2 of the second layer 212. It may protrude thinly.
10 is a view showing a light emitting device according to a third embodiment.
Referring to FIG. 10, a third layer 213 having a predetermined thickness and a first layer 211 and a second layer 212 are alternately disposed on the light emitting chip 111. The sheet member 200. The third layer 213 is a base layer of the sheet member 200 and may be formed in a direction parallel to at least a flat upper surface of the light emitting chip 111.
The third layer 213 may be disposed between the first layer 211 and the second layer 212 and the light emitting chip 111, and may be formed of a translucent resin layer to which a phosphor is not added. Both the second layer 212 and the third layer 213 are layers that do not add phosphor, and may be formed of a silicon or epoxy-based material.
The third layer 213 may separate the phosphor from the light emitting chip 111 to improve the degree of discoloration of the phosphor by heat generated from the light emitting chip 111.
The third layer 213 may be larger or smaller than the length of the first and second directions of the sheet member 200, and the thickness T3 may be formed to be 10 nm or more.
The third layer 213 of the sheet member 200 is formed of a material having a refractive index lower than that of the semiconductor material of the light emitting chip 111, so that when the light emitted from the light emitting chip 111 is incident, the first layer 211 is applied. ) And to the second layer 212 without light loss.
The third layer 213 is formed in parallel with at least the flat upper surface of the light emitting chip 111, so that the first layer 211 and most of the light emitted to the upper surface of the light emitting chip 111 without loss. It may be delivered to the second layer 212 or may be released in the side direction. The third layer 213 may function as a buffer layer that receives and transmits light emitted to the upper surface of the light emitting chip 111.
The third layer 213 of the sheet member 200 diffuses incident light, and the first layer 211 and the second layer 212 convert some of the incident light into wavelengths and transmit the rest. The sheet member 200 may emit light through a surface as a surface light source.
A hole 219 is formed in the sheet member 200, and a portion of the upper surface of the light emitting chip 111, for example, a pad, may be exposed through the hole 219.
11 is another example of FIG. 10.
Referring to FIG. 11, in the sheet member 200, a third layer 213 may be formed under the first layer 211 and the second layer 212, and the first layer 211 and the first layer 211 may be formed. The fourth layer 214 may be formed on the second layer 212.
The second to fourth layers 212, 213, and 214 may be layers to which no phosphor is added, or may be formed of a light transmitting resin layer having a phosphor density lower than that of the first layer 211.
The third layer 213 and the fourth layer 214 may be formed as layers parallel to each other, and are disposed in a direction perpendicular to the first and second layers 211 and 212. The third layer 213 serves as a buffer layer for transmitting light, and the fourth layer 214 serves as a buffer layer for emitting light transmitted from the first and second layers 211 and 212.
Since the first to fourth layers 211, 212, 213, and 214 are formed of the same material or have similar refractive indices, there is almost no light loss at the interface of each layer.
The width of the fourth layer 214 may be smaller than the width of the sum of the first and second layers 211 and 212, that is, the length of the first and second directions, and the thickness T4 may be formed to be 10 nm or more. It is not limited thereto.
An upper surface of the fourth layer 214 may be formed into a rough surface, and the rough surface may be formed into a triangular cross section, a hemispherical cross section, or a spherical shape.
A hole 219 is formed in the sheet member 200, and a portion of the upper surface of the light emitting chip 111, for example, a pad, may be exposed through the hole 219.
12 is a view showing a light emitting device according to a fourth embodiment.
Referring to FIG. 12, in the light emitting device, a first layer 215 and a second layer 216 are alternately arranged, and a plurality of phosphor regions 215A and a plurality of light emitting regions 215B are disposed in the first layer 215. This can be arranged. The plurality of light-transmitting regions 215B may be disposed between the plurality of phosphor regions 215A, respectively.
The width W1 of one side of each phosphor region 215A may be greater than or equal to the width W2 of any side of the light-transmitting region 215B, and at least one of the W1 and W2 has a width of 700 nm. Can be.
Phosphor regions 215A and light-transmitting regions 215B may be alternately disposed in the first layer 215, and an area of the phosphor regions 215A may be wider than that of the light-transmitting regions 215B. Can be. In addition, phosphors may not be added to the light-transmitting region 215B of the second layer 216 and the first layer 215, and may be formed as a larger region than the phosphor region 215A.
The width D2 of the second layer 216 and the width D1 of the first layer 215 may be the same or different, but are not limited thereto.
The same phosphor may be added to different phosphor regions in the first layer 211, or at least two kinds of phosphors may be disposed in different regions, but the present invention is not limited thereto.
The phosphor region 215A and the light transmitting region 215B of the first layer 215 may be disposed in a lattice structure and may have a circular or polygonal shape.
Fig. 13 is a light emitting device showing the fifth embodiment.
Referring to FIG. 13, in the light emitting device, a third layer 213 is disposed under the first layer 217 and the second layer 216. The first layers 217 and 218 may include a first A layer 217 in which a plurality of first phosphor regions 217A and a light transmitting region 217B are alternately arranged, and a plurality of second phosphor regions 218A and a light transmitting region 218B. ) Includes first B layers 218 alternately arranged. The second layer 216 is disposed between the first A layer 217 and the first B layer 218, and the first A layer 217 is disposed in the first direction of the second layer 216. The first B layer 218 may be disposed in a direction opposite to the first direction.
Different phosphors may be added to the first phosphor region 217A of the first A layer 217 and the second phosphor region 218A of the first B layer 218, for example, the first phosphor region 217A. A yellow phosphor may be added to the second phosphor, and a red phosphor may be added to the second phosphor region 218A. The density of the yellow phosphor in the sheet member 200 may be added higher than the density of the red phosphor, but is not limited thereto.
At least three kinds of phosphor regions may be disposed in the sheet member 200, and the at least three kinds of phosphor regions may be disposed in the first layers 217 and 218, or the first layers 217 and 218 and the second layers 216. ) Can be mixed and placed.
As another example, the first phosphor region 217A and the second phosphor region 218A may be alternately disposed in the first layers 217 and 218. In addition, at least one phosphor may be added to at least one phosphor region of two different phosphor regions, but the present invention is not limited thereto.
FIG. 14 illustrates another example of FIG. 1, in which the first layer 221 and the second layer 222 are alternately arranged, and the first layer 221 is gradually wider from the center side toward the outside (D3). > D4). The width D3 of the center side first layer may be at least 1.5 times wider than the width of the outermost first layer. As another example, the width D3 of the first layer 221 may be wider from the center side toward the outer side, or may be narrowed or wider from the one side toward the opposite side.
The width of the second layer 222, which is not the width of the first layer 221, may become narrower or narrower toward the center side, but is not limited thereto.
FIG. 15 illustrates another example of FIG. 1, in which a first layer 231 and a second layer 232 are alternately disposed, and each layer is disposed on an upper surface of the light emitting chip 111 or an upper surface of the sheet member 200. It may be disposed to be inclined with respect to the first angle θ1. The first angle θ1 may be inclined at 10 to 89 °, and may be inclined at 45 to 89 °. The inclined surfaces of the layers 231 and 232 may be inclined to such an extent that the incident light does not travel toward the light emitting chip 111.
In addition, the light reflected from the inclined surfaces of each of the layers 231 and 232 may proceed in the lateral direction of the sheet member 200 rather than in the direction of the light emitting chip 111, thereby reducing the loss of light.
The width of the second layer 232 may become narrower toward the center portion of the light emitting chip 111, and the first layer 231 may have the same width. As another example, the width of the second layer 232 becomes wider toward the center of the light emitting chip 111, or the width of the first layer 231 becomes wider toward the center of the light emitting chip 111. It can be narrowed.
Since the width of the second layer 232 varies depending on the area of the light emitting chip 111, the chromaticity distribution of the light transmitted through the sheet member 200 may be adjusted.
The sheet member 200 is laminated between the first layer 231 by varying the thickness of the second layer 232 in the manufacturing process, and cut into an inclined structure when cutting, thereby reducing the sheet member having an inclined layer structure ( 200).
16 is a sixth embodiment.
Referring to FIG. 16, the sheet member 200 may be formed in a hemispherical or semi-circular column shape.
In the sheet member 200, the first layer 241 and the second layer 242 are alternately disposed, and the upper surface 243A may be formed in a hemispherical or semi-circular column shape.
The sheet member 200 may be at least the same as or different from the width of the light emitting chip 111. Top surfaces of the layers 241 and 242 of the sheet member 200 may be spherical.
17 is another example of FIG. 16, the sheet member 200 may be formed in a hemispherical or semi-circular pillar shape. In the sheet member 200, the first layer 241 and the second layer 242 are alternately arranged, and a horn or a fan-shaped light transmitting portion 243 having a narrow width toward the bottom may be disposed in the center area. . The light transmitting part 243 may be formed to have a cross section inclined at a second angle θ2 from the center of the upper surface of the light emitting chip 111 between the first part 201 and the second part 202. Here, the second angle θ2 may be formed to be 90 ° or less, and the angle θ2 is reflected by the boundary between the light transmitting part 243 and the first part 201 and the second part 202. By letting the light proceed in the side direction, the light loss can be reduced.
The light emitting unit 243 is disposed at the center of the light emitting chip 111, and the phosphor 243 may be added with no phosphor or another phosphor other than the phosphor added to the first layer 241. By providing different chromaticity distribution through the central region of the light emitting chip 111, it is possible to improve the chromaticity distribution of the light emitted onto the light emitting device.
18 is a seventh embodiment.
Referring to FIG. 18, the upper portion of the sheet member 200 is formed in a triangular cross section, and may be formed in a polyhedron shape or a triangular pillar shape. The upper surface 243B of the sheet member 200 may be formed as an inclined surface, and the inner angle θ3 may be formed to be 90 ° or less.
The center side 241B of the sheet member 200 is formed to be thickest and gradually thinner in the side direction. Accordingly, since the thicknesses of the first layer 241 of the sheet member 200 are different from each other, chromaticity distribution by the phosphor may be differently provided.
As another example, the sheet member 200 may be formed as a right triangle, but is not limited thereto.
19 is an eighth embodiment.
Referring to FIG. 19, an adhesive layer 150 may be disposed between the light emitting chip 111 and the sheet member 200. The adhesive layer 150 may be formed of the same material as the material of the sheet member 200 or a material having a refractive index difference of 0.3 or less from the refractive index of the sheet member 200.
The upper portion 211A of the at least one first layer 211 disposed in the first region A1 of the sheet member 200 is connected to the first layer 211 and the second layer 212 disposed in the other region. Compared to the predetermined thickness T5. The first area A1 may be in a center direction based on the side cross section of the light emitting chip 111. Part 211A of the first layer 211 of the sheet member 200 is further protruded, but part or all of the entire first layer 211 or the second layer 212 protrudes more than other layers. You can do that.
In addition, the first region A1 of the sheet member 200 may have a stepped structure compared to other regions.
At least one first layer 211 disposed in the first area A1 has a predetermined thickness difference with respect to the other layers, and the difference in thickness T5 is 1/2 or less of the thickness of the sheet member 200. It can be formed as. Such a difference in thickness T5 may further increase the color conversion efficiency in the first region A1.
In addition, the number of the first layers 211 disposed in the first region A1 may be greater than the number of the first layers 211 disposed in the regions other than the first region A1, but the present invention is not limited thereto. Do not.
20 is another example of FIG. 19, in which the first layer 211 and the second layer 212 disposed in the first region A1 protrude more than the layers of the other region, and less than the number of layers of the other region. Can be deployed.
The first region A1 may be around a region where the pad of the light emitting chip is disposed, and may reflect or transmit the light traveling in the hole direction through the arrangement structure.
21 is a ninth embodiment.
Referring to FIG. 21, the lower portion 211C of the plurality of first layers 211 protrudes more in the direction of the light emitting chip 111 than the second layer 212 in the lower portion of the sheet member 200. Lower portions of the first layer 211 and the second layer 212 are disposed in stepped structures 212B and 211C, and the stepped structures 212B and 211C may be more easily bonded to the adhesive layer 151. can do. Although the lower portion 211C of the first layer 211 is protruded, the lower portion of the second layer 212 can be further protruded, and the lower surfaces of the first layer 211 and the second layer 212 are rough. It may be formed of a cotton, but is not limited thereto.
The length T6 of the first layer 211 protruding more than that of the second layer 212 may be 1/2 or less of the thickness of the fraud sheet member 200.
22 is a tenth embodiment.
Referring to FIG. 22, in the sheet member 200A, the phosphor region 205B and the light transmitting region 205A are alternately disposed in the horizontal direction instead of the vertical direction in the first layer 233 and the second layer 234. The phosphor region 205B and the light transmissive region 205A may be arranged in a matrix or lattice structure when viewed from the side cross section. As another example, in the sheet member, the phosphor region and the light transmitting region may be formed in a block shape, and the phosphor region and the light transmitting region may be alternately arranged in a block matrix structure.
An adhesive layer 150 may be disposed between the sheet member 200A and the light emitting chip 111, and the thickness of the adhesive layer 150 may be formed to a thickness of at least 70 nm to provide light to the sheet member 200A. The incident can be guided to reduce the loss of light.
FIG. 23 is a modification of FIG. 13.
Referring to FIG. 23, in the sheet member 200B, a first layer 251 and a second layer 252 are alternately disposed on the buffer layer 253 and the buffer layer 253, and within the first layer 251. The phosphor region 251A and the light transmitting region 252B are alternately arranged. The phosphor region 251A and the light transmitting region 252B may have a block shape and may be alternately arranged.
The thickness T6 of the buffer layer 253 may be formed to be thicker than the thicknesses of the first layer 251 and the second layer 252, for example, as 1/2 or more of the thickness of the sheet member 200. , Preferably 15 μm or more.
The buffer layer 253 is a translucent resin layer, and an additive such as a scattering agent or a diffusing agent may be further added therein, but is not limited thereto.
24 is an eleventh embodiment.
Referring to FIG. 24, the sheet member 206 extends from an upper surface to a side surface of the light emitting chip 111.
The width x2 of at least one side of the sheet member 206 may be greater than the width of the light emitting chip 111, for example, at least an upper surface width. Accordingly, in the sheet member 206, the first layer 261 and the second layer 262 are alternately disposed, and at least one of the two layers 261 and 262 extends in the lateral direction of the light emitting chip 111. Can be. According to the embodiment, the lower portion 261A of the first layer 261 and the lower portion 262A of the second layer 262 of the light emitting chip 111 are disposed in the lateral direction so that the light emitting chip 111 is in the lateral direction. The color conversion efficiency can be improved for the light emitted from the light, and the light extraction efficiency can also be improved.
The sheet member 206 may have a recess 265 having an open lower portion, and the recess 265 may have a shape substantially the same as an outer shape of the light emitting chip 111, and the width ( D5) may be larger than the width of the light emitting chip 111, the depth (T7) may be formed to be less than the thickness of the light emitting chip 111. As another example, the depth T7 of the sheet member 206 may be formed deeper than the thickness of the light emitting chip 111, in which case the sheet member 206 may be spaced apart from the light emitting chip 111. have.
The light emitting chip 111 is accommodated in the recess 265 of the sheet member 206, and the sheet member 206 is disposed on the top and side surfaces of the light emitting chip 111. Here, an upper surface of the concave portion of the sheet member 206 may be attached to the upper side of the light emitting chip 111.
One side of the sheet member 206 may be spaced apart from the side surface of the light emitting chip 111 by a predetermined distance D6, and the distance D6 may be 1 nm or more, preferably at least 700 nm or 1400 nm or more. Can be arranged.
The sheet member 111 may perform color conversion on light emitted in all directions of the light emitting chip 111.
25 is another example of FIG. 24.
The sheet member 207 is wider than the width of the light emitting chip 111 and includes a recess 275 at the bottom thereof.
The depth T2 of the concave portion 275 may be formed to be 1/2 or more of the thickness T1 of the light emitting chip 111, but may be formed to be 1/2 or less according to the chip type. It is not limited.
Lower portions 271A and 272A of at least one of the layers of the sheet member 200 may extend to the side surface of the light emitting chip 111 and may be spaced apart from the light emitting chip 111 by 1 nm or more.
The outer lower portion of the first 271 and the second layer 272 may also perform color conversion with respect to light emitted from the light emitting chip 111 in the side direction.
26 is a detailed view of a light emitting chip according to an embodiment.
Referring to FIG. 26, the light emitting chip 111 may include a light emitting structure layer 120 including a plurality of compound semiconductor layers; A plurality of conductive layers 130 under the light emitting structure layer 120; A support member 137 under the plurality of conductive layers 130; And a channel layer 139 disposed between the light emitting structure layer 120 and at least one of the plurality of conductive layers 130.
The light emitting structure layer 120 may be implemented as a light emitting diode (LED) including a compound semiconductor, for example, a compound semiconductor of a group III-V group element, and the LED emits light such as blue, green, or red. The LED may be a visible light band or UV LED, but is not limited thereto.
The light emitting structure layer 120 includes a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125 including a group III-V compound semiconductor.
The first conductive semiconductor layer 121 is a compound semiconductor of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and may be selected from, preferably in x Al y Ga 1 -x- y N formed of a semiconductor having a composition formula of (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) Can be. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 121 may be formed in a single layer or multiple layers, and roughness or a pattern may be formed on an upper surface thereof, but is not limited thereto.
The first conductive semiconductor layer 121 may be arranged in a superlattice structure by alternately arranging two layers having different refractive indices or media. For example, the superlattice structure may form at least one pair of InGaN / GaN superlattices structure (AlGaN / GaN SLS), InGaN / InGaNSLS, and AlGaN / InGaN SLS in 3 to 10 cycles.
An electrode 141 may be formed on the first conductive semiconductor layer 121. The electrode 141 may be a pad or may include an electrode having a branch or arm pattern connected to the pad, but is not limited thereto.
The electrode 141 is in ohmic contact with an upper surface of the first conductive semiconductor layer 121, and any one of Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Cu, and Au One or more materials may be mixed to form a single layer or multiple layers. The electrode 141 may be formed in consideration of an ohmic characteristic with respect to the first conductive semiconductor layer 121, adhesion between metal layers, reflective characteristics, and conductive characteristics.
The active layer 123 may be formed under the first conductive semiconductor layer 121 and may be formed of a single quantum well structure, a multi-quantum well structure, a quantum wire structure, or a quantum dot. . The active layer 123 may be formed using a compound semiconductor material of Group III-V elements, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, Or a period of the InGaN well layer / InGaN barrier layer. The band gap of the barrier layer may be higher than the band gap of the well layer.
A conductive cladding layer may be formed on or under the active layer 123, and the conductive cladding layer may be formed of a GaN-based semiconductor. The band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The second conductive semiconductor layer 125 is formed under the active layer 123, and is a compound semiconductor of Group III-V group elements doped with the second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and may be selected from, preferably In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y It can be made of a semiconductor having a composition formula of ≤1). When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 125 may be formed as a single layer or a multilayer, but is not limited thereto.
In addition, the second conductive semiconductor layer 125 may include a first layer and a second layer, and the first layer may be formed to have an AlGaN layer or an AlGaN / GaN superlattice structure of 30 nm or less, and the second layer. The silver GaN layer or AlGaN / GaN superlattice structure can be formed.
The light emitting structure layer 120 may further include a third conductive semiconductor layer under the second conductive semiconductor layer 123, and the third conductive semiconductor layer may be opposite to the second conductive semiconductor layer. It may have a polarity of. In addition, the first conductive semiconductor layer 121 may be a P-type semiconductor layer, and the second conductive semiconductor layer 125 may be implemented as an N-type semiconductor layer. Accordingly, the light emitting structure 120 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
A passivation layer may be formed on a side surface of the light emitting structure layer 120, the passivation layer may be formed of an insulating material, and may extend to an upper surface of the first conductive semiconductor layer 121.
A plurality of conductive layers 130 may be formed under the second conductive semiconductor layer 125 or the third conductive semiconductor layer. Hereinafter, for convenience of description, the lowermost layer of the light emitting structure 120 will be described as an example of the second conductive semiconductor layer 125.
The plurality of conductive layers 130 may include a first conductive layer 131 which is in ohmic contact under the second conductive semiconductor layer 125; A second conductive layer 133 serving as a reflective layer under the first conductive layer 131; And a third conductive layer 135 for bonding to the support member 137 under the second conductive layer 133.
The first conductive layer 131 functions as an ohmic layer in ohmic contact with a bottom surface of the second conductive semiconductor layer 125, and the material may include at least one of metal, metal oxide, and metal nitride. The first conductive layer 131 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), or indium IGZO (IGZO). gallium zinc oxide (IGTO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, Ni / It may include at least one of IrOx / Au / ITO, Ag, Pt, Ni, Au, Rh, Pd, and may be configured in a single layer or multiple layers using the above materials selectively.
The second conductive layer 133 is formed under the first conductive layer 131 and functions as a reflective layer. The reflective layer may include a metal having a reflectance of at least 50% or more. The second conductive layer 133 is at least one layer selectively using Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and a material composed of two or more alloys thereof. It can be formed as. The first conductive layer 131 and the second conductive layer 133 may function as a second electrode, but are not limited thereto.
A portion of the second conductive layer 133 may be disposed between the channel layers 139 to efficiently reflect incident light. The second conductive layer 133 may extend to the bottom surface of the channel layer 139, and may be formed to the entire width of the bottom surface of the channel layer 139 or 80% or less of the bottom surface width.
A third conductive layer 135 is formed below the second conductive layer 133, and the third conductive layer 135 may be used as a barrier layer and / or a bonding layer. The material may be Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu-Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al-Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu- Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu-Cu2O, Cu-Zn, Cu-P, Ni-B, Ni- Mn-Pd, Ni-P, Pd-Ni or may be formed of an alloy with any one material, it may be made of a single layer or a multi-layer structure.
The third conductive layer 135 serves as a bonding layer for bonding the support member 137 and the second conductive layer 133 to each other. The third conductive layer 135 may extend to the side surface of the second conductive layer 133, but is not limited thereto.
A support member 137 is formed below the third conductive layer 135, and the support member 137 supports the entire light emitting chip 111. The thickness of the support member 137 may be formed to 30 ~ 500㎛, it is not limited thereto.
The support member 137 may be formed of a conductive member or an insulating member. The conductive member may be copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafers (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.) may be formed in at least one layer. The support member 137 is an insulating member, and may be disposed on an insulating substrate such as Al 2 O 3, and may form a separate electrode on at least one of the plurality of conductive layers 130 to be electrically connected. .
At least the third conductive layer 135 and the support member 137 may be formed at least wider than the width of the lower surface of the light emitting structure layer 120.
An inner portion of the channel layer 139 may be formed around a lower surface of the light emitting structure layer 120, and an outer portion of the channel layer 139 may extend further outward than a side surface of the light emitting structure layer 120. The channel layer 139 may be disposed between the second conductive layer 133 and the light emitting structure layer 120 to separate the conductive material from the semiconductor layer. An inner portion of the channel layer 139 may overlap the light emitting structure layer 120 by a predetermined width (eg, several to several tens of micrometers). The thickness of the channel layer 139 may be formed to a thickness of 0.02 ~ 5㎛, the thickness may vary depending on the chip size.
The channel layer 139 may be formed in a loop shape, a ring shape, a frame shape, and may be formed in a continuous or discontinuous pattern.
The channel layer 139 may be selected from a material having a refractive index lower than that of the group III-V compound semiconductor, for example, a metal oxide, a metal nitride, or an insulating material. The channel layer 139 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), IZON (IZO nitride), indium aluminum zinc oxide (IZAZO), or indium gallium zinc (IGZO). oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2, etc. may be selectively formed.
The channel layer 139 may provide a high humidity resistant LED by preventing a short from occurring even when the outer wall of the light emitting structure layer 120 is exposed to moisture. When the channel layer 139 is a translucent material, the laser irradiated during laser scribing is transmitted, thereby preventing the occurrence of fragmentation of the metal material due to the laser in the channel region, thereby preventing the interlayer short circuit problem in the sidewall of the light emitting structure 120. You can prevent it.
The channel layer 139 may space the gap between the outer wall of each layer of the light emitting structure layer 120 and the third conductive layer 135.
An electrode 141 is disposed on the first conductive semiconductor layer 121, and the electrode 141 may be exposed through a hole 219 of the sheet member 200, and a wire may be formed through the hole 219. Connecting members such as can be connected. The width D51 of the hole 219 may be formed at least larger than the width of the electrode 141, and the width of the upper portion may be at least wider than the width of the lower portion.
The upper surface width of the light emitting structure layer 120 may be smaller than the width of the lower surface, and thus the side surface of the light emitting structure layer 120 may be formed to be inclined.
A current blocking layer 138 may be formed under the light emitting structure layer 120, and the current blocking layer 138 may be disposed to overlap the electrode 141 in a vertical direction. The current blocking layer 138 may be formed of a material having a lower electrical conductivity than the first conductive layer 131. For example, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 and the like can be selectively formed.
In the sheet member 200, a first layer 211 and a second layer 212 are alternately disposed, a phosphor is added to the first layer 211, and a phosphor is not added to the second layer 212. Can be.
The sheet member 200 is attached to an upper surface of the light emitting chip 111 and has a width larger than at least an upper surface of the light emitting chip 111. Side surfaces of the sheet member 200 may be spaced apart from the top edge of the light emitting chip 111 by a predetermined distance D8. The D8 may be 1 nm or more, and preferably, the width of at least one layer, for example, 700 nm or more.
The thickness T11 of the light emitting chip 111 may be at least 90 μm, but is not limited thereto. The thickness T12 of the sheet member 200 is at least greater than or equal to the thickness of the light emitting chip 111, and may be preferably 30 μm or more.
27 is a view showing another example of a light emitting chip according to the embodiment.
Referring to FIG. 27, the light emitting chip 111 may include a light emitting structure layer 120 including a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125 on a substrate 140. It includes.
The substrate 140 may be a growth substrate, and may be a growth substrate. For example, sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3, or metal At least one of may be used, but is not limited thereto.
A light extraction structure may be formed on the upper side of the substrate 150. The light extraction structure may be formed of a material having a different refractive index, or may be formed of an uneven surface that may change the critical angle of light. Do not.
Between the substrate 140 and the light emitting structure layer 120 may be formed of another semiconductor layer, for example, a compound semiconductor of Group 2-6 elements, for example, to reduce the difference in lattice constant between the substrate 140 and the semiconductor. A semiconductor layer without a dopant may be formed for the buffer layer or the crystallinity of the semiconductor.
The first conductive semiconductor layer 121, the active layer 123, and the second conductive semiconductor layer 125 will be described with reference to FIG. 26.
A stepped region in which the first conductive semiconductor layer 121 is exposed is disposed in at least one region of the light emitting structure layer 121, and a first electrode 143 is disposed on the exposed first conductive semiconductor layer 121. ) Can be placed.
The current spreading layer 127 is disposed on the second conductive semiconductor layer 125, and the current spreading layer 127 may include a metal oxide or a metal nitride, for example, indium tin oxide (ITO) or indium (IZO). zinc oxide, IZTO (indium zinc tin oxide), IZON (IZO nitride), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au, or at least one selected from Ni / IrOx / Au / ITO.
A second electrode 141 may be disposed on the current spreading layer 127, and the second electrode 141 may be in electrical contact with the current spreading layer 127 and the second conductive semiconductor layer 125. have. The current diffusion layer 127 diffuses and supplies the power supplied from the second electrode 141.
The second electrode 141 is disposed in the hole 219 of the sheet member 200, and the width of the hole 219 is formed at least larger than the width of the second electrode 141, or does not interfere with the wire process. Can be formed within a width.
The sheet member 200 is disposed on the light emitting chip 111, and the first member 211 and the second layer 212 that are vertical are alternately arranged in the sheet member 200. Phosphor is added to the first layer 211 and phosphor is not added to the second layer 212.
The width of the sheet member 200 may be at least wider than the width of the substrate 140 of the light emitting chip 111.
Side surfaces of the sheet member 200 may extend outward at least a predetermined distance D7 from an edge of the light emitting chip 111, and the extended portion may include a first layer 211 and a second layer 212. At least one layer may be further disposed.
<Lighting system>
As described above, light emitting devices such as FIGS. 26 and 27 may be packaged and mounted on a board, or may be packaged after being mounted on a board. Structural features of the light emitting structure disclosed in the above embodiments may be selectively applied to other embodiments, but are not limited to the features of each embodiment.
The light emitting device or light emitting device package disclosed above may be mounted on a board and provided as a component of a lighting system. The lighting system may function as a backlight unit or as a lighting unit, for example, the lighting system may include a backlight unit, a lighting unit, an indicating device, a lamp, and a street lamp.
28 is a diagram illustrating a display device according to an exemplary embodiment.
Referring to FIG. 28, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.
The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.
The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.
The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.
The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 300 according to the embodiment disclosed above, and the light emitting device package 300 may be arrayed on the substrate 1033 at predetermined intervals. have.
The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 300 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.
In addition, the plurality of light emitting device packages 300 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 300 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.
The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.
The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.
The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.
The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.
The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.
Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.
29 is a diagram illustrating another example of a display device according to an exemplary embodiment.
Referring to FIG. 29, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 300 disclosed above is arranged, an optical member 1154, and a display panel 1155. .
The substrate 1120 and the light emitting device package 300 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.
The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.
Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.
The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.
30 is a perspective view of a lighting apparatus according to an embodiment.
Referring to FIG. 30, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).
The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.
The light emitting module 1530 may include a substrate 1532 and a light emitting device package 300 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 300 may be arranged in a matrix form or spaced apart at predetermined intervals.
The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.
In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.
At least one light emitting device package 300 may be mounted on the substrate 1532. Each of the light emitting device packages 300 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.
The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 300 to obtain chromaticity distribution and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).
The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.
In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.
As described above, the lighting system includes a light emitting device or a light emitting device package having improved chromaticity distribution or color reproducibility, thereby improving reliability of the light emitting device or the light emitting device package.
On the other hand, while the specific embodiments have been described, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined not only by the claims below, but also by those equivalent to the claims.
