KR20120087038A - Light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to improve the light brightness of a single wavelength band which is emitted from a single light emitting device. CONSTITUTION: A conductive layer(110) is formed on a supporting member(115). A plurality of light emitting structure layers(120) is formed on the conductive layer to be vertically corresponded. Bonding layers(127,137) are formed on a partial region between the plurality of light emitting structure layers. Light transmissive support layers(125,135) are formed between at least one of the plurality of light emitting structure layers and the bonding layer. A protective layer(117) is formed at the circumference of a lower side of the light emitting structure layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a light emitting device package, and an illumination system.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied as light sources for various products such as keypad light emitting units, electronic displays, lighting devices, and display devices of mobile phones.

The embodiment provides a light emitting device having a plurality of active layers between an electrode and a support member.

The embodiment provides a light emitting device having a plurality of light emitting structure layers between an electrode and a support member.

The embodiment provides a light emitting device in which at least two light emitting structure layers are stacked on a support member.

The embodiment provides a light emitting device package and a lighting system including the light emitting device.

The light emitting device according to the embodiment, the support member; A conductive layer on the support member; A plurality of light emitting structure layers disposed corresponding to each other in the vertical direction on the conductive layer; A bonding layer disposed in a partial region between the plurality of light emitting structure layers; A translucent support layer between at least one of the plurality of light emitting structure layers and the bonding layer; And an electrode on the plurality of light emitting structure layers.

The light emitting device package according to the embodiment includes a body; A plurality of lead electrodes on the body; A light emitting device mounted on at least one of the lead electrodes and electrically connected to the other lead electrode; And a molding member covering the light emitting element, wherein the light emitting element comprises: a support member; A conductive layer on the support member; A plurality of light emitting structure layers disposed corresponding to each other in the vertical direction on the conductive layer; A bonding layer disposed in a partial region between the plurality of light emitting structure layers; A translucent support layer between at least one of the plurality of light emitting structure layers and the bonding layer; And an electrode on the plurality of light emitting structure layers.

The embodiment can provide a light emitting device having improved light efficiency.

The embodiment can improve the luminous intensity of a single wavelength band emitted from one light emitting device.

The embodiment has the effect of emitting a wavelength of at least two color bands from one light emitting device.

1 is a side sectional view showing a light emitting device according to the first embodiment.
2 is a view showing another example of a light emitting structure layer in the embodiment.
3 is a view showing another structure of the light emitting structure layer in the embodiment.
4 is a view showing a light extraction structure of the light emitting structure layer in the embodiment.
5 is a view illustrating a plurality of light extraction guzole in the light emitting unit of the embodiment.
6A to 6D are views showing other examples of the bonding layer and the connection electrode in the embodiment.
7 to 21 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
22 is a side sectional view showing a light emitting device according to the second embodiment.
23 is a side sectional view showing a light emitting device according to the third embodiment.
24 is a side cross-sectional view showing a light emitting device package according to the embodiment.
25 is a diagram illustrating a display device according to an exemplary embodiment.
26 is a diagram illustrating another example of a display device according to an exemplary embodiment.
27 is a diagram illustrating a lighting device according to an embodiment.

In the description of an embodiment, each layer (film), region, pattern or structure is formed to be "on" or "under" the substrate, each layer (film), region, pad or pattern. In the case described, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device 100 includes a support member 115, a conductive layer 110, a first light emitting structure layer 120, a second light emitting structure layer 130, connection electrodes 126 and 136, and a bonding layer. 127, 137, electrode layer 138, electrodes 139, and translucent support layers 125, 135.

The light emitting device 100 may include at least two light emitting parts A1 and A2, and at least one of each light emitting part A1 and A2 may include a structure layer including at least one light emitting structure layer, for example, an active layer. Can be.

The light emitting device 100 may include at least two light emitting structure layers 120 and 130, and the at least two light emitting structure layers 120 and 130 may be combined in a structure corresponding to each other in a vertical direction. The at least two light emitting structure layers 120 and 130 include a wavelength band of the same color or a wavelength band of different colors, and the wavelength band includes at least one of a visible light band and an ultraviolet band.

Widths of the at least two light emitting structure layers 120 and 130 may be the same or different widths, preferably, the width of the second light emitting structure layer 130 is at least narrower than the width of the first light emitting structure layer 120. But it is not limited thereto.

The first light emitting part A1 includes the support member 115 to the first bonding layer 127, and the second light emitting part A2 includes the second bonding layer 137 to the electrode 139. can do.

The support member 115 is disposed on the base side and may include a conductive material. The support member 115 may be formed of, for example, Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu-W, carrier wafers (Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.) may be selectively formed.

The support member 115 may be formed by an electroplating method, or bonded in a bonding method or a sheet form, but is not limited thereto. The support member 115 may be used as a path for supplying power and a heat radiation path. The support member 115 supports the entire light emitting device, and may have a thickness of 30 to 500 μm.

The support member 115 may be formed of an insulating support member such as ZnO and Al ₂ O ₃ materials instead of the conductive member.

At least one conductive layer 110 may be disposed on the support member 110, and a plurality of conductive layers 110 may be disposed.

The plurality of conductive layers 110 includes a first conductive layer 111, a second conductive layer 112, a third conductive layer 113, and a fourth conductive layer 114. The first conductive layer 111 may be in ohmic contact with a lower layer of the light emitting structure layer 120. The first conductive layer 111 may be disposed as an ohmic layer, but is not limited thereto.

The first conductive layer 111 may include a light-transmitting oxide or / and nitride series, for example, Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Monolayer using at least one of indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , and RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material including In, Zn, Sn, Pt, Ag, Ni, Au, Hf, and a selective combination thereof. As another example, the first conductive layer 111 may be formed in a multilayer structure using the light transmitting oxide and the metal material, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO. It may be formed in a laminated structure such as. The first conductive layer 111 may have a light transmittance of 50% or more, preferably 80% or more. A schottky material or an insulating material may be further disposed in a portion of the first conductive layer 111, and the region may be disposed in a region corresponding to the first connection electrode 126 in a vertical direction.

The second conductive layer 112 may be disposed under the first conductive layer 111 and may be formed at least thicker than the first conductive layer 111. The second conductive layer 112 may be narrower or wider than the width of the first conductive layer 111, but is not limited thereto.

The second conductive layer 112 may be disposed between the support member 115 and the first conductive layer 111 and may efficiently reflect incident light. The second conductive layer 112 includes a reflective layer, and may preferably include at least one high reflective metal layer. The second conductive layer 112 may be formed of a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. The second conductive layer 112 may include a metal having a reflectance of 50% or more, and may preferably include a metal having a reflectance of 90% or more.

A third conductive layer 113 may be disposed below the second conductive layer 112, and the third conductive layer 113 may be disposed between the second conductive layer 112 and the support member 115. . The third conductive layer 113 may be used as a barrier layer between the second conductive layer 112 and the support member 115. The third conductive layer 113 may be formed of one or more of Ni, Pt, Ti, W, V, Fe, and Mo, and may be formed in a single layer or multiple layers.

The outer side of the third conductive layer 113 may extend below the protective layer 117. The second conductive layer 112 may extend below the protective layer 117, and an outer side of the third conductive layer 113 may be disposed below the second conductive layer 112.

The fourth conductive layer 114 may be used as a bonding layer or a seed layer. The fourth conductive layer 114 is In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd , Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu- Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al -Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu It may be formed of a layer containing any one or two or more of -Cu 2 O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P, Pd-Ni.

The fourth conductive layer 114 may be disposed between the third conductive layer 113 and the support member 115 to strengthen the adhesive force. At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but is not limited thereto.

The passivation layer 117 is disposed around the bottom surface of the light emitting structure layer 120. The protective layer 117 may be defined as a channel layer disposed around the light emitting structure layer, but is not limited thereto. The protective layer 117 includes a light transmissive material, and may be preferably formed of a conductive material or an insulating material. The protective layer 117 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), or indium aluminum zinc oxide (IZO). , Optionally, indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, etc. It may be formed, but not limited thereto.

An inner portion of the protective layer 117 is disposed below the light emitting structure layer 120, and an outer portion thereof further extends outward from a side surface of the light emitting structure layer 120.

The first light emitting structure layer 120 includes a plurality of compound semiconductor layers, for example, a group III-V compound semiconductor. The first light emitting structure layer 120 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In _x Al _y Ga _{1 -} and a semiconductor material having a compositional formula of _{x- y} N (0 ≦ x ≦ 1, 0 ≦ _y ≦ 1, 0 ≦ x + y ≦ 1).

The first light emitting structure layer 120 may include a first conductive semiconductor layer 121 doped with a first conductive dopant, a first active layer 122, and a second conductive semiconductor layer doped with a second conductive dopant ( 123). Other layers may be further arranged between each layer, but not limited thereto.

The first active layer 122 may be disposed under the first conductive semiconductor layer 121, and the second conductive semiconductor layer 123 may be disposed under the first active layer 122. Here, the first conductive semiconductor layer 121 is an n-type semiconductor layer, the n-type semiconductor layer may include an N-type dopant, such as Si, Ge, Sn, Se, Te, and the like, the second conductive type The semiconductor layer 122 is a p-type semiconductor layer, and the p-type semiconductor layer may include a P-type dopant such as Mg and Zn. As another example, the first conductive semiconductor layer may be a p-type semiconductor layer, and the second conductive semiconductor layer may be an n-type semiconductor layer.

The first active layer 122 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The first active layer 122 is a Group III -5-group using a compound semiconductor material of the element comprising a well layer and a barrier layer, the well layer is _{In x Al y Ga 1 -x- y} N (0≤x≤ 1, 0≤y≤1, formed by a composition formula of 0≤x + y≤1), and wherein the barrier layer is _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0? X + y? 1).

The first active layer 122 may be formed by, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, or a period of an InGaN well layer / InGaN barrier layer, but is not limited thereto. Do not. A conductive clad layer may be formed on or under the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap energy of the barrier layer may be higher than the band gap energy of the well layer, and the band gap energy of the conductive clad layer may be higher than the band gap energy of the barrier layer.

In addition, the first light emitting structure layer 120 may further include a semiconductor layer having a polarity opposite to that of the second conductive type under the second conductive type semiconductor layer 123, and the half layer may be formed of the second conductive type. When the semiconductor layer 123 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the first light emitting structure layer 120 may be implemented as any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The lower surface of the second conductive semiconductor layer 123 may be in ohmic contact with the first conductive layer 111.

A first transparent support layer 125 is disposed between the light emitting structure layer 120 and the first electrode 127, and the first transparent support layer 125 has a predetermined thickness on the first conductive semiconductor layer 121. It can be formed as.

The first translucent support layer 125 may include an insulating material or a conductive material, and may be formed of a material having a transmittance of at least 70% or more.

The first transparent support layer 125 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the first transparent support layer 125 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).

The first light transmitting support layer 125 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The first translucent support layer 125 is provided as a space or a spacer in which the light emitted from the first active layer 122 can be sufficiently diffused.

The first translucent support layer 125 may further extend to the side surface as well as the top surface of the first light emitting structure layer 120. The first translucent support layer 125 may be formed on the side surface of the first light emitting structure layer 120 by using an insulating material, thereby preventing the short circuit between the first light emitting structure layer 120.

The first bonding layer 127 is formed in a portion of the first transparent support layer 125, and the first transparent support layer 125 is 50% or more of the upper surface area of the first light emitting structure layer 120, Preferably 85% or more.

The first bonding layer 127 may be disposed on the first translucent support layer 125, and the first bonding layer 127 may be formed of a metal layer or pattern. The first bonding layer 127 may be a seed metal.

The first bonding layer 127 is disposed on the first transparent support layer 125 and is connected to the first connection electrode 126. The first connection electrode 126 may be disposed under the first bonding layer 127, and part of the first connection electrode 126 is in contact with the first conductive semiconductor layer 121.

The first connection electrode 126 may be disposed in one or a plurality, and the plurality of first connection electrodes 126 may be spaced apart from each other. The first connection electrode 126 penetrates into the first translucent support layer 125 through a through hole or via structure.

The lower end of the first connection electrode 126 may be disposed below the top surface of the first conductive semiconductor layer 121, and the contact area with the first conductive semiconductor layer 121 may be increased. have.

The first connection electrode 126 includes an ohmic electrode, and Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh It may include at least one of Cu, and may be formed of at least two layers. The first connection electrode 126 includes an ohmic part, a connection part, and a bonding part, and the ohmic part contacts the first conductive semiconductor layer 121 with a material such as Cr, V, W, or TI, and the connection part Pt, Pd, Ru, Rh, V, Ti, Al, Cu, W is disposed between the ohmic portion and the bonding portion, the bonding portion is a metal such as Au and the connecting portion and the first bonding layer ( 127).

The first bonding layer 127 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the first bonding layer 127 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The second bonding layer 137 is bonded and electrically connected to the first bonding layer 127. The second bonding layer 137 may be formed in a layer or a pattern and faces the first bonding layer 127. The second bonding layer 137 and the first bonding layer 127 may be formed in a pattern having the same shape for bonding, but is not limited thereto. The second bonding layer 137 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the second bonding layer 137 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The second connection electrode 136 includes an ohmic electrode, and Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh It may include at least one of Cu, and may be formed of at least two layers. The second connection electrode 136 includes an ohmic part, a connection part, and a bonding part, and the ohmic part contacts the third conductive semiconductor layer 131 with a material such as Cr, V, W, or TI, and the connection part Pt, Pd, Ru, Rh, V, Ti, Al, Cu, W is disposed between the ohmic portion and the bonding portion, the bonding portion is formed of a metal such as Au, the connecting portion and the second bonding layer Disposed between 137.

The second connection electrode 136 is disposed above the bottom surface of the third conductive semiconductor layer 131. The second connection electrode 136 may be disposed in one or a plurality, and the plurality of second connection electrodes 136 may be spaced apart from each other. The second connection electrode 136 is penetrated into the second translucent support layer 135 through a through hole or via structure.

A second translucent support layer 135 is disposed between the second bonding layer 137 and the second light emitting structure layer 130, and the second translucent support layer 135 includes an insulating material or a conductive material, and at least 70 It may be formed of a material having a transmittance of more than%.

The second translucent support layer 135 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the second translucent support layer 135 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).

The second translucent support layer 135 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The second translucent support layer 135 is provided as a space or a spacer in which the light emitted from the second active layer 132 can be sufficiently diffused.

The second translucent support layer 135 may further extend to the side surface as well as the top surface of the second light emitting structure layer 130. The second translucent support layer 135 may be formed on the side surface of the second light emitting structure layer 130 by using an insulating material, thereby preventing the short circuit between the second light emitting structure layer 130.

The first bonding layer 137 is formed in a portion of the second transparent support layer 135, and the second transparent support layer 135 is preferably at least 50% of an area of the lower surface of the second light emitting structure layer 130. More than 85%.

The first translucent support layer 125 may be spaced apart from the second translucent support layer 135, and a gap thereof may be spaced apart by the thickness of the first bonding layer 127 and the second bonding layer 137. . The region 140 between the first transparent support layer 125 and the second transparent support layer 135 may be a spacer, and may be filled with an empty area and / or an insulating material. One of the first transparent support layer 125 and the second transparent support layer 135 may not be formed, but is not limited thereto.

A second light emitting structure layer 130 is disposed on the second light transmitting support layer 135, and the second light emitting structure layer 130 includes a plurality of compound semiconductor layers, for example, a group III-V compound semiconductor. do. The second light emitting structure layer 130 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In _x Al _y Ga _{1 -} and a semiconductor material having a compositional formula of _{x- y} N (0 ≦ x ≦ 1, 0 ≦ _y ≦ 1, 0 ≦ x + y ≦ 1).

The second light emitting structure layer 130 may include a third conductive semiconductor layer 131 doped with a first conductive dopant, a second active layer 132, and a third conductive semiconductor layer doped with a second conductive dopant ( 133). Another layer may be further disposed between the layers, but is not limited thereto.

The second active layer 132 may be disposed on the third conductive semiconductor layer 131, and the fourth conductive semiconductor layer 133 may be disposed on the second active layer 132. The third conductive semiconductor layer 131 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like, and the fourth conductive type The semiconductor layer 133 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a P-type dopant such as Mg and Zn. As another example, the first conductive semiconductor layer may be a p-type semiconductor layer, and the second conductive semiconductor layer may be an n-type semiconductor layer.

The second active layer 132 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The second active layer 132 is a group III -5-group using a compound semiconductor material of the element includes a well layer and a barrier layer, the well layer is _{In x Al y Ga 1 -x- y} N (0≤x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1, the barrier layer is formed of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1 , 0 ≦ x + y ≦ 1).

The second active layer 132 may be formed by, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. I do not. A conductive clad layer may be formed on or under the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap energy of the barrier layer may be higher than the band gap energy of the well layer, and the band gap energy of the conductive clad layer may be higher than the band gap energy of the barrier layer.

In addition, the second light emitting structure layer 130 may further include a semiconductor layer having a polarity opposite to that of the fourth conductive type on the fourth conductive type semiconductor layer 133, and the semiconductor layer may be, for example, the fourth conductive type. When the conductive semiconductor layer 133 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the second light emitting structure layer 130 may be implemented as any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The second active layer 132 may be formed of the same compound semiconductor or different compound semiconductors as the first active layer 122. The second active layer 132 may emit light having a first peak wavelength, and the first active layer 122 may emit light having a second peak wavelength. The light of the first peak wavelength and the light of the second peak wavelength may be the same wavelength band or different wavelength bands, but are not limited thereto.

An electrode layer 138 is formed on the fourth conductive semiconductor layer 133, and the electrode layer 138 may be formed as a light transmissive conductive layer. The transmissive conductive layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), or IGZO (IGZO). at least one of indium gallium zinc oxide (IGTO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO Can be. As another example, the electrode layer 138 may include an ohmic contact material, and may include one or more of In, Zn, Sn, Ni, Pt, and Ag.

The electrode layer 138 may be formed to at least 50% or more of the upper surface area of the fourth conductive semiconductor layer 133, and diffuse current. In addition, the electrode layer 138 may improve the extraction efficiency of the second light emitted from the second active layer 132.

An electrode 139 is formed on the electrode layer 138, and the electrode 139 may be a pad or may include a pad and an electrode pattern connected thereto. The electrode 139 may further include a structure such as an arm type pattern, a branched pattern, and a finger pattern as a current diffusion structure.

In the light emitting device 100, the conductive layer 110 is disposed on the support member 115, and the first light emitting structure layer 120 is disposed between the conductive layer 110 and the first bonding layer 127. The second light emitting structure layer 130 is disposed between the second bonding layer 137 and the electrode 139.

The first conductive semiconductor layer 121 may be formed to be at least thicker than a thickness of the second conductive semiconductor layer 123 or the first active layer 122, and the third conductive semiconductor layer 131 may be a fourth thickness. It may be formed at least thicker than the thickness of the conductive semiconductor layer 133 or the second active layer 132. The translucent support layers 125 and 135 may be disposed on the semiconductor layers thicker than the other layers of the light emitting structure layers 120 and 130, for example, on the first and third conductive semiconductor layers 121 and 131.

In addition, an upper surface of the first conductive semiconductor layer 121 is an N-face, a lower surface of the first conductive semiconductor layer 131 is an N-face, and the first and third conductive semiconductor layers 121 and 131. N-faces of the may be arranged in a structure facing each other.

The translucent support layers 125 and 135 have a refractive index at least lower than the refractive index (eg, 2.45) of the compound semiconductor, eg, GaN, on each of the light emitting structure layers 120 and 130. The refractive indexes of the translucent support layers 125 and 135 may range from 1.3 to 2.3.

At least one of the first and second translucent support layers 125 and 135 may be disposed between the first light emitting structure layer 120 and the second light emitting structure layer 130, and the light transmissive support layers 125 and 135 may have light extraction efficiency. Can improve.

FIG. 2 is a diagram illustrating another example of each light emitting structure layer of FIG. 1.

Referring to FIG. 2, the first conductive semiconductor layer 121 of the first light emitting structure layer includes a first semiconductor layer L1 and a second semiconductor layer L2, and the first semiconductor layer L1 is _{in x Al y Ga 1 -x- y} N may include a semiconductor layer and / or a super lattice structure having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ). Super lattice structure of said first semiconductor layer (L1) is the having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) A first layer, a band gap energy different from the first layer, and a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1); It includes two floors. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged, and includes a structure such as a GaN / InGaN structure, GaN / AlGaN, and the like. In the superlattice structure, each layer may have a plurality of layers or more and may be stacked in two or more pairs.

It said second semiconductor layer (L2) is _{In x Al y Ga 1 -x- y} N semiconductor layer or / having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) , and It may include a superlattice structure. The second superlattice structure of a semiconductor layer (L2) comprises a having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) first layer, the composition formula of the first layer has a first band gap energy different from _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It has a 2nd layer which has. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged, and includes, for example, a structure of InGaN / GaN structure, AlGaN / GaN, or the like. In the superlattice structure, each layer may have a plurality of layers or more and may be stacked in two or more pairs.

The second conductive semiconductor layer 123 includes a third semiconductor layer L3 and a fourth semiconductor layer L4, and the third semiconductor layer L3 includes In _x Al _y Ga _{1 -x- y} N. And a semiconductor layer or superlattice structure having a compositional formula of (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The superlattice structure may include a stacked structure of AlGaN / GaN. The fourth semiconductor layer (L4) is _{In x Al y Ga 1 -x- y} N semiconductor layer or / having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) , and It may include a superlattice structure.

The third conductive semiconductor layer 131 may include at least two layers L1 and L2, and at least one of the at least two layers L1 and L2 may include a superlattice structure. Each layer of the third conductive semiconductor layer 131 may be the same semiconductor layer or a different semiconductor layer as the layers of the first conductive semiconductor layer 121, but is not limited thereto.

The fourth conductive semiconductor layer 133 may include at least two layers L3 and L4, and at least one of the at least two layers L3 and L4 may include a superlattice structure. Each layer of the fourth conductive semiconductor layer 133 may be the same semiconductor layer or a different semiconductor layer as the layers of the second conductive semiconductor layer 123, but is not limited thereto.

Referring to FIG. 3, another example of the first light emitting structure layer is illustrated.

The first light emitting structure layer 120 has a first conductivity type on the first conductive semiconductor layer 121, the active layer 122, the second conductive semiconductor layer 123, and the second conductive semiconductor layer 123. The semiconductor device 124 further includes a type semiconductor layer 124. The first conductive semiconductor layer 121 may be an N-type semiconductor layer, and the second conductive semiconductor layer 123 may be a P-type semiconductor layer, and may have an inverse structure. The first light emitting structure layer 120 may include a junction structure of N-P-N or P-N-P.

In addition, the second light emitting structure layer as well as the first light emitting structure layer 120 may include the NPN or PNP junction structure.

4 is a view showing a light extraction structure of the light-transmitting support layer and the light emitting structure layer in an embodiment.

Referring to FIG. 4, the first conductive semiconductor layer 121 of the first light emitting structure layer may include a light extracting structure 121A, and the light extracting structure 121A may include the first conductive semiconductor layer ( The upper surface of the 121) includes a concave-convex shape, the concave-convex shape may include a structure such as texture pattern, roughness having a regular or irregular size.

The light extracting structure 121A may be formed on the upper surface of the first conductive semiconductor layer 121, that is, the N-face, and thus may change the critical angle of incident light, thereby improving light extraction efficiency.

Since the light extraction structure 121A is formed on the upper surface of the first conductive semiconductor layer 121, the interface between the first conductive semiconductor layer 121 and the first light-transmitting support layer 125 is the light extraction structure 121A. It can be formed into). As another example, another semiconductor layer having a light extraction structure 121A, for example, an undoped semiconductor layer may be further disposed between the first transparent support layer 125 and the first conductive semiconductor layer 121. It is not limited to.

In addition, the third conductive semiconductor layer 131 of the second light emitting structure layer may further include an uneven light extraction structure 121A, but is not limited thereto.

The light extracting structure may further include a light extracting structure on a surface of at least one of the first light-transmissive support layer 125 and the second light-transmissive support layer 135, for example, an opposite side of each light-emitting structure layer. The light extraction structure may change the critical angle of incident light, thereby increasing the light extraction efficiency.

In addition, an interface between the translucent support layers 125 and 135 and the bonding layers 127 and 137 may be formed as a light extraction structure, but is not limited thereto.

5 is a diagram illustrating an example of a plurality of light extraction structures in an embodiment.

Referring to FIG. 5, surfaces of at least two layers of the second light emitting structure layer 130, the second light transmitting support layer 135, and the second bonding layer 137 may be formed of a light extraction structure. For example, the lower surface of the third conductive semiconductor layer 131 may be formed of the first light extracting structure 131A, and the upper surface of the fourth conductive semiconductor layer 133 may be the second light extracting structure 133A. The upper surface of the electrode layer 138 may be formed of a third light extracting structure 138A, and the lower surface of the second translucent support layer 135 may be formed of a fourth light extracting structure 135A. Can be.

Since the interface between the electrode layer 138 and the electrode 139 is formed as a rough surface by the third light extracting structure 138A, the loss of light incident on the electrode 139 may be reduced.

In addition, the interface between the second translucent support layer 135 and the second bonding layer 137 is formed in a rough surface by the fourth light extracting structure 135A, so that the light incident on the second bonding layer 137 is formed. The loss can be reduced.

The embodiment has described an example in which a light extraction structure is formed in the second light emitting structure layer 130 and the layers 135 and 138 adjacent thereto, but among the layers between the conductive layer (110 in FIG. 1) and the first bonding layer 127. A light extraction structure may be formed on the surface of at least one layer, but is not limited thereto.

6 is a diagram illustrating an example of a bonding layer and a connection electrode in an embodiment. The above description describes the first bonding layer 127 and the first connection electrode 126, and the second bonding layer and the second connection electrode are described below. The structure of 126 can be selectively applied.

Referring to FIG. 6A, the first bonding layer 127 has a disk shape, and a first connection electrode 126 is disposed under the first bonding layer 127. The first connection electrode 126 may be disposed under the center of the first bonding layer 127. The width of the first connection electrode 126 may be formed to be at least narrower than the width of the first bonding layer 127. The first connection electrode 126 includes a circular or polygonal shape, but is not limited thereto.

Referring to FIG. 6B, the first bonding layer 127 includes a center side first portion C1 and a second portion P1 extending outward from at least one side of the first portion C1. It includes. The second portion P1 may extend opposite to each other or at a predetermined angle with respect to the first portion C1, and may be formed to have the same length or different lengths.

A plurality of first connection electrodes 126 is disposed below the first bonding layer 127, and the plurality of first connection electrodes 126 may include a first portion C1 of the first bonding layer 127 and Each of the second parts P1 may be disposed. The plurality of first connection electrodes 126 may be in contact with different regions of the first conductive semiconductor layer to distribute and supply current.

Referring to FIG. 6C, the first bonding layer 127B has a loop-shaped shape around a center-side first portion C2, a line-shaped second portion P2, and the second portion P2. And a third portion P3, wherein the region of the first portion C2 is formed to be wider than other regions, and the second portion P2 branches to at least both sides of the first portion C2. The third portion P3 is connected to at least a portion of the second portion P2 and is formed in a circular shape or a polygonal shape.

A first connection electrode 126 is disposed below the first bonding layer 127B, and the first connection electrode 126 is formed of a first portion C2 and a second portion (1) of the first bonding layer 127. P2) can be arranged in a plurality below. The first connection electrode 126 may be further disposed below the third portion P3, but is not limited thereto.

Referring to FIG. 6D, the first bonding layer 127C includes a first portion C3 and a second portion P4, and the first portion C3 is a center side and wider than other regions. The second portion P4 may be formed to have a width, and the second portions P4 may be disposed to be offset from each other by at least 30 ° to 120 ° from the first portion C3. The second portion P4 may have, for example, a finger shape, spaced at intervals of 90 °, and may have the same length or different lengths.

A plurality of first connection electrodes 126 may be disposed below the first bonding layer 127, and the plurality of first connection electrodes 126 may be spaced apart from each other to prevent concentration of current.

Not only the structures of the first bonding layer 127 and the first connection electrode 126, but also the structures of the second bonding layer and the second connection electrode may be selectively formed among the above structures. In addition, since the first bonding layer 127 and the second bonding layer 137 are bonded to each other, it may be preferably formed in the same shape.

7 to 20 are diagrams illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIG. 7, the first light emitting structure layer 120 is formed on the first substrate 101. The first substrate 101 may be loaded onto growth equipment, and a plurality of compound semiconductor layers may be formed on the first substrate 101. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The first substrate 101 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, GaAs, Ga ₂ O ₃ , and the like. An uneven structure may be formed on the first substrate 101, and the uneven structure may be formed in a lens shape or a stripe shape.

On the first substrate 101, a structure (eg, a pattern shape, a pillar shape, etc.) for improving the crystal structure or light extraction efficiency by using a compound semiconductor (eg, ZnO, GaN) of Group 2 to Group 6 elements is provided. Can be formed.

In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the first substrate 101, and the buffer layer may be formed to reduce the difference in lattice constant between the first substrate 101 and the compound semiconductor. . GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like using the buffer layer, for example, a group III-V compound semiconductor. The undoped semiconductor layer is an undoped nitride-based semiconductor, which is intentionally doped without a conductive dopant. The undoped semiconductor layer is a semiconductor layer having a significantly lower electrical conductivity than the first conductive semiconductor layer, and may be, for example, an undoped GaN layer and may have characteristics of the first conductive type. The undoped semiconductor layer may be formed to a thickness of 1 ~ 3㎛. For convenience of explanation, the first light emitting structure layer 120 is grown on the first substrate 101 as an example.

The first light emitting structure layer 120 includes a first conductive semiconductor layer 121, a first active layer 122, and a second conductive semiconductor layer 123, and the first conductive semiconductor layer 121. The silver may be selected from compound semiconductors of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. The first active layer 122 is formed on the first conductive semiconductor layer 121, and may be formed of a compound semiconductor of a group III-V group element.

The first active layer 122 may be formed of a single or multiple quantum well structure, and may also be formed of a quantum wire structure or a quantum dot structure. The first active layer 122 is _{In x Al y Ga 1 -x- y} N well layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) and In _x Al _y and Ga ₁ includes a barrier layer having a compositional formula of _{-x- y N (0≤x≤1, 0≤y≤1,} 0≤x + y≤1). The first active layer 122 may be formed of, for example, a cycle of an InGaN well layer / GaN barrier layer, a cycle of an InGaN well layer / AlGaN barrier layer, or a cycle of an InGaN well layer / InGaN barrier layer. I do not. A conductive clad layer may be formed on or under the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap energy of the barrier layer may be higher than the band gap energy of the well layer, and the band gap energy of the conductive clad layer may be higher than the band gap energy of the barrier layer.

The second conductive semiconductor layer 123 may be a compound semiconductor of a Group III-V group element doped with a second conductive dopant, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.

In the first light emitting structure layer 120, the first conductive semiconductor layer 121 is an N-type semiconductor layer, and the second conductive semiconductor layer 123 is formed of a P-type semiconductor layer or an inverse structure thereof. Can be. In addition, the first light emitting structure layer 120 may further include a first conductive type, for example, an N type semiconductor layer, on the second conductive semiconductor layer 123. Accordingly, the first light emitting structure layer 120 may include at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.

Referring to FIG. 8, a protective layer 117 is formed in a second region except for the first region on the first light emitting structure layer 120, and the second region is a peripheral region or an edge region of the first region. It may be, and may be formed in a polygonal or band structure having a loop shape. The protective layer 117 may be formed of a single layer or multiple layers, but is not limited thereto.

The protective layer 117 may be formed of a transmissive insulating layer or a conductive layer, and may be formed of a sputtering apparatus or a deposition apparatus after forming a mask pattern in the first region.

The transmissive insulating layer may be selectively formed among SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, and the like. The transmissive conductive layer includes an oxide or nitride, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and IGZO. It may include at least one of (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide).

9, a plurality of conductive layers 110 and support members 115 are formed on the second conductive semiconductor layer 123. The plurality of conductive layers 110 may include a first conductive layer 111 on the second conductive semiconductor layer 123, a second conductive layer 112 on the first conductive layer 111, and the second conductive layer. The third conductive layer 113 is disposed on the layer 112, and the fourth conductive layer 114 is disposed on the third conductive layer 113. The plurality of conductive layers 110 may be formed by selectively using a sputtering, plating, and deposition method, but is not limited thereto.

The first conductive layer 111 may be formed on the second conductive semiconductor layer 123 by arranging a second region in a mask pattern. The first conductive layer 111 may include a light-transmitting oxide or / and nitride series, for example, Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Monolayer using at least one of indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , and RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material including In, Zn, Sn, Pt, Ag, Ni, Au, Hf, and a selective combination thereof. As another example, the first conductive layer 111 may be formed in a multilayer structure using the light transmitting oxide and the metal material, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO. It may be formed in a laminated structure such as.

The second conductive layer 112 may be formed on the first conductive layer 111 to have a thickness different from that of the first conductive layer 111. The second conductive layer 112 may also be formed to extend on the protective layer 117, but is not limited thereto. The second conductive layer 112 includes a metal that can efficiently reflect incident light. The second conductive layer 112 may include a reflective material having a reflectance of at least 50% or more, and preferably include a metal layer having a reflectance of 90% or more. The second conductive layer 112 may be formed of, for example, a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof.

A third conductive layer 113 is formed on the second conductive layer 112, and the third conductive layer 113 may be formed of one or more of Ni, Pt, Ti, W, V, Fe, and Mo. It can be formed in a single layer or multiple layers. An outer side of the third conductive layer 113 may extend over the protective layer 117.

The fourth conductive layer 114 is formed on the third conductive layer 113 and may be used as a bonding layer or a seed layer. The fourth conductive layer 114 is In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd , Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu- Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al -Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu It may be formed of a layer containing any one or two or more of -Cu 2 O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P, Pd-Ni.

At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but is not limited thereto.

The support member 115 is disposed on the fourth conductive layer 114, and the support member 115 may include a conductive material. The support member 115 may be formed of, for example, Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu-W, carrier wafers (Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.) may be selectively formed.

The support member 115 may be formed by an electroplating method, or may be bonded in a bonding method or a sheet form, but is not limited thereto. The support member 115 may be used as a path for supplying power and a heat radiation path. The support member 115 supports the entire light emitting device, and may have a thickness of 30 to 500 μm. As another example, the support member 115 may be formed of an insulating support member such as ZnO and Al ₂ O ₃ materials, not the conductive member.

FIG. 10 is a structure in which the structure of FIG. 9 is rotated in a reverse direction.

9 and 10, the first substrate 101 is removed by a physical lift off method. The first substrate 101 is irradiated with a laser of a predetermined wavelength to remove at least the first substrate 101 from the first light emitting structure layer 120. This approach can be defined as laser lift off (LLO). The first substrate 101 can be removed by a chemical lift-off method, which can separate the first substrate 101 by wet etching between the first substrate 101 and the semiconductor layer (eg, the buffer layer). have.

An upper surface of the first conductive semiconductor layer 121 of the first light emitting structure layer 120 is N-face, and processes such as polishing and polishing may be performed.

Referring to FIG. 11, etching is performed on the outside of the first light emitting structure layer 120. The outer portion of the protective layer 117 is exposed by the etching process of the first light emitting structure layer 120. The etching process may include, but is not limited to, dry or wet etching.

The outer side of the first light emitting structure layer 120 may be treated as a surface perpendicular to the bottom surface of the support member 105 or may be treated as an inclined surface. Each layer of the first light emitting structure layer 120 may be formed to have a width that gradually narrows away from the support member 115. The etching process may be formed before forming the first transparent support layer 125 or after the first transparent support layer 125 is formed.

An upper surface of the first conductive semiconductor layer 121 may be formed in the light extraction structure as shown in FIG. 4 by dry etching or wet etching, but is not limited thereto.

The first translucent support layer 125 may be formed on the first light emitting structure layer 120. The first translucent support layer 125 may be formed on the first conductive semiconductor layer 121 to have a width equal to or narrower than that of the first conductive semiconductor layer 121.

The first transparent support layer 125 may be formed of a sputter or / and deposition equipment, the material is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be an insulating material such as. As another example, the first transparent support layer 125 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).

The first light transmitting support layer 125 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The first translucent support layer 125 may include a material having a transmittance of at least 70% or more, and may be provided as a space or a spacer in which light emitted from the first active layer 122 may be sufficiently diffused.

Referring to FIG. 12, after the hole 126A is formed from the first transparent support layer 125 to the depth at which the first conductive semiconductor layer 121 is exposed, the first connection electrode 126 is formed in the hole 126A. Form). The hole 126A may be formed using a laser or a drill, but is not limited thereto. The hole 126A is formed to be lower than the top surface of the first conductive semiconductor layer 121, thereby increasing the contact area of the first connection electrode 126.

A first connection electrode 126 is formed in the hole 126A, and the first connection electrode 126 is in ohmic contact with the first conductive semiconductor layer 121. The first connection electrode 126 may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. It may include, and may be formed of at least two layers. The first connection electrode 126 may be formed using a sputtering, plating, or deposition equipment, but is not limited thereto.

The first connection electrode 126 includes an ohmic portion M1, a connection portion M2, and a bonding portion M3, and the ohmic portion M1 is made of a material such as Cr, V, W, and TI. In contact with the conductive semiconductor layer 121, the connection part M2 is bonded to the ohmic part M1 and the bonding part using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, and W. The bonding portion M3 is disposed between the connecting portion M2 and the first bonding layer 127 by a metal such as Au.

The first bonding layer 127 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the first bonding layer 127 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The structure of FIG. 12 may be defined as the first light emitting unit A1, and the first light emitting unit A1 may be one chip structure, but is not limited thereto.

Referring to FIG. 13, a second light emitting structure layer 130 is formed on the second substrate 102. The second substrate 102 may be loaded onto growth equipment, and a plurality of compound semiconductor layers may be formed on the second substrate 102. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The second substrate 102 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs, Ga ₂ O ₃ . An uneven structure may be formed on the second substrate 102, and the uneven structure may be formed in a lens shape or a stripe shape.

On the second substrate 102, a structure (eg, a pattern shape, a pillar shape, etc.) for improving the crystal structure or light extraction efficiency by using a compound semiconductor (eg, ZnO, GaN) of Group 2 to Group 6 elements is provided. Can be formed.

In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the second substrate 102, and the buffer layer may be formed to reduce the difference in lattice constant between the second substrate 102 and the compound semiconductor. . GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like using the buffer layer, for example, a group III-V compound semiconductor. The undoped semiconductor layer may be formed of a GaN-based semiconductor layer, but is not limited thereto.

A second transmissive support layer may be formed between the second substrate 102 and the second light emitting structure layer 130, and the second transmissive support layer may be formed of a material such as sapphire on which the semiconductor layer may be grown. Can be formed. For convenience of explanation, the second light emitting structure layer 130 is grown on the second substrate 102 as an example.

The second light emitting structure layer 130 includes a third conductive semiconductor layer 131, a second active layer 132, and a fourth conductive semiconductor layer 133, and the third conductive semiconductor layer 131 The silver may be selected from compound semiconductors of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. The second active layer 132 may be formed on the third conductive semiconductor layer 131, and may be formed of a compound semiconductor of a group 3 to 5 group element.

The second active layer 132 may be formed of a single or multiple quantum well structure, and may also be formed of a quantum wire structure or a quantum dot structure. The second active layer 132 is _{In x Al y Ga 1 -x- y} N well layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) and In _x Al _y and Ga ₁ includes a barrier layer having a compositional formula of _{-x- y N (0≤x≤1, 0≤y≤1,} 0≤x + y≤1). The second active layer 132 may be formed by, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. I do not. A conductive clad layer may be formed on or under the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap energy of the barrier layer may be higher than the band gap energy of the well layer, and the band gap energy of the conductive clad layer may be higher than the band gap energy of the barrier layer.

The fourth conductive semiconductor layer 133 is a compound semiconductor of a Group III-V group element doped with a second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.

In the second light emitting structure layer 130, the third conductive semiconductor layer 131 may be an N-type semiconductor layer, and the fourth conductive semiconductor layer 133 may be a P-type semiconductor layer or an inverted structure thereof. have. In addition, the second light emitting structure layer 130 may further include a third conductive type, for example, an N type semiconductor layer, on the fourth conductive semiconductor layer 133. Accordingly, the second light emitting structure layer 130 may include at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.

Referring to FIG. 14, an electrode layer 138 is formed on the second light emitting structure layer 130, and the electrode layer 138 may be formed by sputtering and / or deposition. The electrode layer 138 is a current spreading layer and includes a light transmissive material. The electrode layer 138 is a transparent conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO nitride), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / It may include at least one of ITO. As another example, the electrode layer 138 may be formed as an ohmic contact layer, and the material may include one or more of In, Zn, Sn, Ni, Pt, and Ag. The electrode layer 138 may transmit light at a thickness of several dB or more, and may not interfere with light extraction.

The electrode layer 138 may be formed to 50% or more of the upper surface area of the fourth conductive semiconductor layer 133, but is not limited thereto.

Referring to FIG. 15, a temporary substrate 150 may be formed on the electrode layer 138, and the temporary substrate 150 may be formed of at least one layer. The temporary substrate 150 may be formed in the same manner as the sputtering or deposition method, or may be attached as a separate sheet, but is not limited thereto.

The temporary substrate 150 includes a first protective layer 151, a second protective layer 152, a sacrificial layer 153, a diffusion layer 154, and a support layer 155. The first protective layer 151 is formed of an insulating material or a metal material, and is an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , or Ti, Cr, or the like. It can be formed using. The first protective layer 151 protects the second light emitting structure layer 130 from external impact.

A second passivation layer 152 is formed on the first passivation layer 151, and the second passivation layer 152 is disposed between the first passivation layer 151 and the sacrificial layer 153. It can protect the shock and damage that can be caused by. The second protective layer 152 includes at least one of In, Sn, Ag, Nb, Ni, Au, and Cu material. The second protective layer 152 may include at least one metal layer, and may be formed using a sputtering, deposition, plating apparatus, or the like.

A sacrificial layer 153 is formed on the second protective layer 152, and the sacrificial layer 153 may include a material having at least a higher band gap energy than the band gap energy of the diffusion layer 154. The sacrificial layer 153 includes an insulating material, and the insulating material is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ At least one of, the band gap energy of the SiO ₂ is about 8.9eV, the band gap energy of Al ₂ O ₃ is about 8eV.

The diffusion layer 154 may be formed of a material lower than the band gap energy and the laser energy of the sacrificial layer 153. The diffusion layer 154 includes, for example, a material such as ITO, ZnO, IZO, or TiN, and has a band gap energy of about 2.0 to 7.0 Ev.

A support layer 155 is formed on the sacrificial layer 154, and the support layer 155 includes at least one of an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ . can do. The support layer 155 may be formed of a material larger than the band gap energy of the laser and the band gap energy of the diffusion layer 154.

The support layer 155 is formed to have a thickness of at least 30 μm or more, and serves to support the removal of the second substrate 102.

Each of the sacrificial layer 153, the diffusion layer 154, and the support layer 155 may be formed as a single layer or a multilayer, but is not limited thereto.

15 and 16, the temporary substrate 150 is disposed on a base, and the second substrate 102 is removed by a physical lift off or chemical lift off method. The physical lift-off method may be separated from the semiconductor layer by irradiating a laser to the second substrate 102. In the chemical lift-off method, the second substrate 102 may be separated by etching between the semiconductor layer and the substrate or between the semiconductor layers using a wet etching solution.

When the second substrate 102 is removed, at least one of the buffer layer, the undoped semiconductor layer, and the third conductive semiconductor layer 131 may be exposed. The buffer layer and the undoped semiconductor layer may be removed, and the removal method may use wet etching.

Referring to FIG. 17, a second transparent support layer 135 is formed on the third conductive semiconductor layer 131, and the second transparent support layer 135 is formed to have a predetermined thickness to emit light. The thickness may be formed about 1 ~ 200㎛. The second translucent support layer 135 may not be formed, but is not limited thereto.

The second translucent support layer 135 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the second translucent support layer 135 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO). The second translucent support layer 135 may be formed of a Group III-V compound semiconductor, and may be used as a support layer without removing the undoped semiconductor layer.

A hole 137A is formed in the second translucent support layer 135, and the hole 137A extends further below the top surface of the third conductive semiconductor layer 131. A second connection electrode 136 is formed in the hole 137A, and the second connection electrode 136 may include an ohmic metal and a bonding metal. The second connection electrode may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. It may be formed of at least two metal layers. The second connection electrode 136 includes an ohmic part M1, a connection part M2, and a bonding part M3, and the ohmic part M1 is made of a material such as Cr, V, W, and TI. In contact with the conductive semiconductor layer 131, the connection part M2 is bonded to the ohmic part M1 and the bonding part using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, and W ( The bonding portion M3 is formed of a metal such as Au and is disposed between the connecting portion M2 and the second bonding layer 137.

The second connection electrode 136 may be formed in one or a plurality, and this number can smoothly supply current.

A second bonding layer 137 may be formed on the second connection electrode 136, and the second bonding layer 137 may be formed of a bonding material. The second bonding layer 137 contacts the second connection electrode 136 and may be selectively formed among a circle, a polygon, a random shape, a line, and a curved shape, and may have a shape corresponding to the first bonding layer. Can be formed.

The second bonding layer 137 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the second bonding layer 137 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The second bonding layer 137 may be disposed on a side opposite to the electrode layer 138 based on the second light emitting structure layer 130 and may have a size that does not prevent light extraction. The second bonding layer 137 may be formed on the surface of the second light emitting structure layer 130 with an area of at least 70% or less, preferably 30% or less.

17 may be defined as a second light emitting unit A2, and the second light emitting unit A2 may be described as at least one chip structure.

Referring to FIG. 18, the first light emitting part A1 of FIG. 12 and the second light emitting part A2 of FIG. 17 are disposed to face each other. The second bonding layer 137 of the second light emitting unit A2 is aligned to correspond to the first bonding layer 127 of the first light emitting unit A1.

Referring to FIG. 19, the first bonding layer 127 and the second bonding layer 137 are bonded. A separate bonding material may be further included between the first bonding layer 127 and the second bonding layer 137, but is not limited thereto.

The first translucent support layer 125 and the second translucent support layer 135 may be spaced apart from each other, and an area therebetween may be formed as an empty region 140.

The region 140 between the first translucent support layer 125 and the second translucent support layer 135 may be filled with an insulating material or another translucent material, but is not limited thereto.

The second light emitting unit A2 is coupled to the first light emitting unit A1 in a vertical direction.

19 and 20, the temporary substrate 150 is removed. At least the support layer 155 of the layers 151-155 of the temporary substrate 150 is removed by a physical lift off method and / or a chemical lift off method.

In the physical lift-off method, the laser is irradiated through the support layer 155, and the diffusion layer 154 between the support layer 155 and the sacrificial layer 153 is made of a material smaller than the laser energy and the support layer 155. And the band gap energy of the sacrificial layer 153 are absorbed as heat energy by the laser and decomposed by the heat energy, thereby separating the support layer 155. At this time, part or all of the diffusion layer 154 may be removed together with the support layer 155.

As another example, a laser having a predetermined wavelength is focused on a region of the sacrificial layer 153 between the second protective layer 152 and the diffusion layer 154, and thus the sacrificial layer 153 is separated from the second protective layer 152. ) Can be separated. Accordingly, the support layer 155 may be separated together with other layers.

The first protective layer 151 and the second protective layer 152 may prevent the second light emitting structure layer 130 from being damaged by the laser lift-off process.

When the support layer 155 is separated, the layers 151, 152, 153, and 154 on the electrode layer 138 are selectively removed by etching. For example, the diffusion layer 154, the sacrificial layer 153, the second protective layer 152, and the first protective layer 151 may be removed by wet etching. If necessary, the diffusion layer 154 may be removed by dry etching.

Referring to FIG. 21, when the temporary substrate is removed, the electrode 139 is formed on the electrode layer 138. The electrode 139 is formed to have a width smaller than the width of the electrode layer 138, and includes a pad or an electrode pattern connected thereto. The electrode pattern may include a pattern having a shape branching outwardly and / or inwardly from at least one direction from the pad, and may diffuse current. The electrode 139 may be formed by using deposition, sputtering and plating methods.

The first polarity power may be supplied through the support member 115, and the second polarity power may be supplied through the electrode 139. The first polarity power source is the first light emitting structure layer 120, the first connection electrode 126, the first bonding layer 127, the second bonding layer 137, and the plurality of conductive layers 110 through the conductive layer 110. The second connection electrode 136 flows to the second light emitting structure layer 130, the electrode layer 138, and the electrode 139. Accordingly, the first light emitting structure layer 120 and the second light emitting structure layer 130 emit the first light and the second light. Each of the first light and the second light may be light having a peak wavelength in a visible light band or a peak wavelength in an ultraviolet light band. The first light and the second light may be light of peak wavelengths of the same band or light of peak wavelengths of different bands. When the first light and the second light are light of the peak wavelength of the same band, the light intensity can be increased. When the first light and the second light are peak wavelengths of different bands, the mixed light may be white light or another third light. The first and second light may include at least one of blue, green, and red wavelengths, but are not limited thereto. The band may include the spectrum of each color spectrum, such as the blue wavelength, the red wavelength, and the green wavelength, rather than a single peak wavelength.

22 is a second embodiment. As an example of another light emitting device 100A of FIG. 1, the second light transmitting support layer is removed from the structure of FIG. 1. By removing the second transparent support layer, the thickness of the light emitting device 100 may be reduced.

In addition, the second transmissive support layer and the second connection electrode may be removed to directly contact the second bonding layer 137 under the third conductive semiconductor layer 131. The second bonding layer 137 may be formed in a portion of the second light emitting structure layer 130, for example, 50% or less, preferably 10% or less of an area of the lower surface of the third conductive semiconductor layer 131. It is not limited thereto.

In addition, the current blocking layer 118 may be disposed in an area corresponding to the first connection electrode 126. The current blocking layer 118 may be similarly applied to FIG. 1, but is not limited thereto.

The current blocking layer 118 is disposed below the second conductive semiconductor layer 123 and disposed to correspond to the first connection electrode 126 in a vertical direction. The current blocking layer 118 may be selected from a lower conductive material or a schottky contact material than the first conductive layer 111, and preferably SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as.

Accordingly, the current supplied to the first connection electrode 126 may flow in the bypass path without flowing in the shortest path by the current blocking layer 118, thereby providing a current spreading effect.

FIG. 23 is an example of another light emitting device 100B of FIG. 1 as a third embodiment.

Referring to FIG. 23, an insulating layer 119 may be disposed outside the first and second light emitting structure layers 120 and 130. The insulating layer 119 may protect the outside of the first and second light emitting structure layers 120 and 130, and may prevent an interlayer short and moisture penetration.

The insulating layer 119 may further extend around the top surface of the third conductive semiconductor layer 121.

A portion of the insulating layer 119 may extend between the first transparent support layer 125 and the second transparent support layer 135. The refractive index of the insulating layer 119 is lower than that of the compound semiconductor layer, thereby improving light extraction efficiency.

The insulating layer 119 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as.

A third connection electrode 127A is disposed between the first bonding layer 127 and the second bonding layer 137, and one side S3 of the third connection electrode 127A is disposed on the first and second bonding layers 127A. In contact with at least one of the bonding layers 137, the other side S4 may be disposed on the passivation layer 117 along the first side surface of the insulating layer 119. The other side S4 of the third connection electrode 127A may be used as a pad.

A fourth connection electrode 139A is disposed on the electrode layer 138, one side S1 of the fourth connection electrode 139A contacts the electrode layer 138, and the other side S2 of the insulating layer 119. It may be disposed on the outside of the conductive layer 110 along the second side of the. The first side and the second side may be different sides, preferably opposite sides, but are not limited thereto. The other side S2 of the fourth connection electrode 139A may be used as a pad.

The other side S2 of the fourth connection electrode 139A may be connected to at least one of the second conductive layer 112 and the fourth conductive layer 114. For example, the fourth connection electrode 139A is connected to the second conductive layer 112, the second conductive layer 112 extends below the protective layer 117, and the second conductive layer 112. One side of 112A may further extend to the outer side surface of the protective layer 117. Accordingly, the second conductive layer 112 may be disposed outside the protective layer 117 and may be in physical contact with the fourth connection electrode 139A. As another example, the third conductive layer 113 or the fourth conductive layer 114 may be connected to the fourth connection electrode 139A.

The second conductive layer 112 and the third conductive layer 113 may be formed to be bent, but is not limited thereto.

24 is a cross-sectional view of a light emitting device package according to the embodiment.

Referring to FIG. 24, the light emitting device package 30 may be installed on the body 20, the first lead electrode 32 and the second lead electrode 33 installed on the body 10, and the body 20. And a light emitting device 100 according to the embodiment electrically connected to the first lead electrode 32 and the second lead electrode 33, and a molding member 40 covering the light emitting device 100.

The body 20 may include a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (for example, MCPCB), and the inclined surface around the light emitting device 100. This can be formed. The body 20 may include a through hole structure, but is not limited thereto.

A cavity 22 having a predetermined depth may be formed on the body 20, and lead electrodes 32 and 33 and the light emitting device 100 are disposed in the cavity 22. The light emitting device 100 may use a light emitting device according to another embodiment, but is not limited thereto.

The upper surface of the body 20 may be formed flat, in which case the cavity 22 is not formed.

The first lead electrode 32 and the second lead electrode 33 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 32 and the second lead electrode 33 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be installed on the body 20 or on the first lead electrode 32 or the second lead electrode 33.

The light emitting device 100 is a device disclosed in the above embodiment (s), and may be die bonded on the first lead electrode 31 and bonded to the second lead electrode 32 by a wire 25. .

The molding member 40 may include a resin material such as silicon or epoxy, and may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100. A lens may be disposed on the molding member 40, and the lens may be implemented to be in contact with or not in contact with the molding member.

The light emitting device 100 emits a blue color, and at least one kind of phosphor may be disposed on the molding member 40, and in this case, luminous intensity may be 1.5 times or more than that of other chips having the same size. . In addition, when a plurality of colors are emitted from the light emitting device 100, target light (for example, white) may be realized through a plurality of colors on the package, and a separate phosphor is not added to the mold member 40, It can reduce the type of phosphor.

The light emitting device package 30 may be mounted with at least one of the light emitting devices of the embodiments disclosed above, but is not limited thereto.

Although the package of the embodiment is illustrated and described in the form of a top view, it is implemented in a side view to improve the heat dissipation, conductivity, and reflection characteristics as described above. After packaging, the lens may be formed or adhered to the resin layer, but is not limited thereto.

In addition, although the light emitting device 100 is described as being packaged as illustrated in FIG. 25, the light emitting device 100 may be directly mounted on a board (COB) to cover the light emitting device with a molding member or a lens. A plurality of light emitting devices may be arranged on the board.

<Light unit>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 25 and 26 and a lighting device shown in FIG. 27. Etc. may be included.

25 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 25, the display apparatus 1000 according to the exemplary embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device package 30 may be arranged on the substrate 1033 at predetermined intervals. have.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 30 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

26 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 26, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 30 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

27 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 27, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 30 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Each embodiment is not limited to each embodiment, but may be selectively applied to other embodiments disclosed above, but is not limited to each embodiment.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100, 100A, 100B: light emitting element, 115: support member, 110: conductive layer, 120, 130: light emitting structure layer, 125, 135: light transmitting support layer, 126, 136: connecting electrode, 127, 137: bonding layer, 138: electrode layer, 139: electrode, 117: protection Layer, 119: insulating layer

Claims (22)

Support member;
A conductive layer on the support member;
A plurality of light emitting structure layers disposed corresponding to each other in the vertical direction on the conductive layer;
A bonding layer disposed in a partial region between the plurality of light emitting structure layers;
A translucent support layer between at least one of the plurality of light emitting structure layers and the bonding layer; And
Light emitting device comprising an electrode on the plurality of light emitting structure layer. The light emitting device of claim 1, wherein the plurality of light emitting structure layers comprise: a first light emitting structure layer on the conductive layer; And a second light emitting structure layer on the first light emitting structure layer,
The bonding layer is a light emitting device connected to the first light emitting structure layer and the second light emitting structure layer. The method of claim 1, wherein the support member comprises any one of a conductive support member and an insulating support member,
The conductive layer is an ohmic layer below the first light emitting structure layer; And a reflective layer under the ohmic layer. The method of claim 2, further comprising a protective layer around the outer side between the first light emitting structure layer and the conductive layer,
And an outer portion of the protective layer extends outward from a side surface of the first light emitting structure layer. The semiconductor light emitting device of claim 2, wherein the first light emitting structure layer comprises: a first conductive semiconductor layer under the bonding layer; A first active layer under the first conductive semiconductor layer; And a second conductive semiconductor layer between the first active layer and the conductive layer.
The second light emitting structure layer may include a third conductive semiconductor layer on the bonding layer; And a second active layer on the third conductive semiconductor layer. And a fourth conductive semiconductor layer on the second active layer. The light emitting device of claim 5, wherein the first conductive semiconductor layer and the third conductive semiconductor layer are N-type semiconductor layers, and the second conductive semiconductor layer and the fourth conductive semiconductor layer are P-type semiconductor layers. device. The light emitting device of claim 5 or 6, wherein the first active layer and the second active layer emit at least one of light in a visible light band and light in an ultraviolet light band. The method according to claim 5 or 6,
The light emitting device of claim 1, wherein the first active layer and the second active layer emit light having the same peak wavelength or different peak wavelengths. The method of claim 5, wherein the translucent support layer comprises: a first translucent support layer between the bonding layer and the first light emitting structure layer; And a second translucent support layer between the bonding layer and the second light emitting structure layer. The method of claim 9, wherein the bonding layer comprises: a first bonding layer on the first translucent support layer; And a second bonding layer under the second translucent support layer. The light emitting device of claim 1, further comprising a connection electrode disposed in the light transmissive support layer and connected to at least one of the bonding layer and the plurality of light emitting structure layers. 10. The method of claim 9,
A first connection electrode connected between the bonding layer and the first conductive semiconductor layer and disposed in the first translucent support layer; And a second connection electrode connected between the bonding layer and the third conductive semiconductor layer and disposed in the second translucent support layer. The light emitting device of claim 1, further comprising the electrode layer between the plurality of light emitting structure layers and the electrode. The light emitting device of claim 9, wherein the first light transmitting support layer is spaced apart from the second light transmitting support layer. The light emitting device of claim 4, further comprising an insulating layer around at least one of the first and second light emitting structure layers. The light emitting device of claim 15, further comprising a third connection electrode extending from the bonding layer to the protective layer. The light emitting device of claim 15, further comprising a fourth connection electrode extending from the electrode to contact the conductive layer. The light emitting device of claim 1, wherein the translucent support layer comprises at least one of an insulating material and a conductive material. The light emitting device of claim 12, further comprising a current blocking layer disposed below the second conductive semiconductor layer and corresponding to a direction perpendicular to the first connection electrode. The light emitting device of claim 9, wherein the bonding layer is formed in multiple layers. The method of claim 1, wherein the bonding layer is formed in a region narrower than the area of at least one of the upper surface and the lower surface of the translucent support layer,
The light transmissive support layer is formed in at least 50% of the at least one light emitting structure layer. The light emitting device of claim 1, further comprising a light extracting structure in at least one of the plurality of light emitting structure layers and the transparent support layer.

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