KR20130112330A - Light emitting device, method for fabricating the same and lighting system - Google Patents

Abstract

PURPOSE: A light emitting device, a method for fabricating the same, and a lighting system are provided to improve the electrical characteristic of a device by forming a hole in an active layer and a second conductivity type semiconductor layer. CONSTITUTION: First holes (141) are arranged between the lower surface of the light emitting structure layer and a first semiconductor layer. A first electrode layer (150) is arranged under the light emitting structure layer. A second electrode layer (170) is arranged under the first electrode layer. An insulating layer is arranged between the first holes and the first and the second electrode layer. A contact electrode is connected to the first semiconductor layer through the first holes.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME AND LIGHTING SYSTEM

Embodiments relate to a light emitting device, a method for manufacturing the light emitting device, and an illumination system.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. The III-V group nitride semiconductors are usually made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y?

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and are applied as light sources for various products such as key pad light emitting units, cell phones, lighting devices, and display devices of mobile phones.

The embodiment provides a light emitting device having a new vertical electrode structure and a method of manufacturing the same.

In an embodiment, a first electrode layer and a second electrode layer are insulated from each other under the light emitting structure layer, and one of the first electrode layer and the second electrode layer is disposed in a hole disposed in the light emitting structure layer, and the hole is Provided are light emitting devices formed at different angles with respect to a bottom surface of a light emitting structure, and a method of manufacturing the same.

The embodiment provides a light emitting device in which an inner surface of the second conductive semiconductor layer and an inner surface of the first conductive semiconductor layer are formed at different angles among holes in the light emitting structure layer, and a method of manufacturing the same.

The embodiment provides a light emitting device and a method of manufacturing the same so that different semiconductor layers can overlap in a horizontal direction in a hole in a light emitting structure layer.

The embodiment provides a light emitting device having a roughly formed lower surface of the first conductive semiconductor layer disposed in a hole in a light emitting structure layer and improving a contact area with a contact electrode, and a method of manufacturing the same.

The light emitting device according to the embodiment includes a first conductive semiconductor layer including a first semiconductor layer and a second semiconductor layer under the first semiconductor layer, and a second conductive semiconductor layer disposed under the first conductive semiconductor layer. layer; And an active layer disposed between the first and second conductive semiconductor layers. A plurality of first holes disposed between the lower surface of the light emitting structure layer and the first semiconductor layer; A first electrode layer disposed under the light emitting structure layer; A second electrode layer disposed under the first electrode layer; An insulating layer disposed between the plurality of first holes and the first and second electrode layers; A contact electrode protruding from one of the first and second electrode layers and connected to the first semiconductor layer through the plurality of first holes, wherein a circumferential surface of the first hole is formed in the second semiconductor layer. And an inner side surface and a second inner side surface disposed in the active layer and the second conductive semiconductor layer, wherein the second inner side surface of the second conductive semiconductor layer is an obtuse angle with respect to a bottom surface of the light emitting structure layer. The first inner side surface of the first semiconductor layer is inclined and includes an angle smaller than the inclined angle of the second inner side surface with respect to the bottom surface of the light emitting structure layer.

In one embodiment, a method of manufacturing a light emitting device includes: forming a first semiconductor layer on a growth substrate; Forming a plurality of first mask patterns on the first semiconductor layer; A second semiconductor layer is formed on the first semiconductor layer, an active layer is formed on the second semiconductor layer, and a second conductive semiconductor layer is formed on the active layer, and the first semiconductor layer is formed from an upper surface of the second conductive semiconductor layer. Forming a plurality of first holes in a region corresponding to the mask pattern up to an upper surface of the mask pattern; Forming a first electrode layer on the second conductive semiconductor layer; Forming an insulating layer around an upper surface of the second electrode layer and the first hole, and forming a second hole in the insulating layer; Forming a second electrode layer on the insulating layer and contacting the contact electrode of the second electrode layer with the first semiconductor layer through the second hole; And removing the growth substrate.

Since the embodiment forms a hole in the active layer and the second conductive semiconductor layer separately by a mesa etching process, it is possible to prevent damage of the second conductive semiconductor layer and the active layer, and thus the electrical and optical characteristics of the light emitting device. The defect of can be improved.

The embodiment can improve the crystallinity of the light emitting structure layer by reducing the strain caused by the growth of the first conductive semiconductor layer.

The embodiment can improve the manufacturing process of the light emitting device, thereby improving the yield of the light emitting device.

The embodiment can improve the reliability of the lighting system including the light emitting device and the light emitting device package having the same.

1 is a plan view illustrating a light emitting device according to a first embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of the light emitting device of FIG. 1.
3 is an enlarged view of a hole of FIG. 2.
4A to 4C are examples of the holes of FIG. 2 and are viewed from the direction of the first semiconductor layer.
FIG. 5 is a view of the hole of FIG. 2 viewed from the direction of the second conductive semiconductor layer.
6 is a side sectional view showing a light emitting device according to the second embodiment.
7 is a cross-sectional view taken along the BB side of FIG. 6.
8 is a plan view illustrating a light emitting device according to a third embodiment.
9 is a side cross-sectional view of FIG. 8.
10 is a diagram illustrating a modification of FIG. 1.
11 is a side sectional view showing a light emitting device according to the fourth embodiment.
12 is a side cross-sectional view illustrating a light emitting device according to a fifth embodiment.
13 is a side sectional view showing a light emitting device according to the sixth embodiment.
14 is a side sectional view showing a light emitting device according to the seventh embodiment.
15 is a side sectional view showing a light emitting device according to an eighth embodiment.
16 is a side sectional view showing a light emitting device according to the ninth embodiment.
17 is a side sectional view showing a light emitting device according to a tenth embodiment.
18 is a side sectional view showing a light emitting device according to an eleventh embodiment.
19 is a side sectional view showing a light emitting device according to a twelfth embodiment.
20 to 28 are views illustrating a manufacturing process of the light emitting device of FIG. 2.
FIG. 29 is a diagram illustrating an example of a manufacturing process of the light emitting device of FIG. 12.
30 is a side sectional view showing a light emitting device package according to a thirteenth embodiment having the light emitting device.
31 and 32 are a perspective view and a side cross-sectional view showing a light emitting device package according to a fourteenth embodiment having the light emitting device.
33 is a perspective view illustrating a display device having a light emitting device or a light emitting device package according to an exemplary embodiment.
34 is a diagram illustrating another example of a display device having a light emitting device or a light emitting device package according to an exemplary embodiment.
35 is a view illustrating a lighting device having a light emitting device or a light emitting device package according to an embodiment.

In the description of an embodiment, each layer (film), region, pattern or structure is formed to be "on" or "under" the substrate, each layer (film), region, pad or pattern. In the case described, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the criteria for above or below each layer will be described with reference to the drawings.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a plan view illustrating a light emitting device according to a first embodiment, and is a sectional view taken along the line A-A of FIG. 1, and FIG. 3 is a partially enlarged view of FIG. 2.

1 to 3, the light emitting device 100 includes a light emitting structure layer 135, a first electrode layer 150 disposed below the light emitting structure layer 135, and a light emitting structure layer 135. A second electrode layer having a plurality of first holes 141, an insulating layer 161, and a contact electrode 171 disposed under the light emitting structure layer 135 and partially disposed in the first holes 141. 170, and pad 151.

The light emitting device 100 includes a plurality of compound semiconductor layers such as LEDs using compound semiconductors of Group II-VI or Group III-V elements, and the LEDs emit light such as blue, green, or red. The LED may be a visible light band or UV LED. The emission light of the LED may be implemented using various semiconductors within the technical scope of the embodiment, but is not limited thereto.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120 disposed under the first conductive semiconductor layer 110, and a second conductive type disposed under the active layer 120. The semiconductor layer 130 is included. The thickness of the first conductive semiconductor layer 110 may be formed at least thicker than the thickness of the second conductive semiconductor layer 130 or the active layer 120.

The first conductive semiconductor layer 110 is a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, It may include at least one of GaAsP, AlGaInP. The first conductive semiconductor layer 110 is a semiconductor layer having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 110 may be an n-type semiconductor layer, and the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 110 includes at least two layers, for example, a first semiconductor layer 111 and a second semiconductor layer 113 under the first semiconductor layer.

The first semiconductor layer 111 and the second semiconductor layer 113 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN. It may include at least one of, AlGaAs, GaP, GaAs, GaAsP, AlGaInP.

Doping concentrations of the first conductive dopant of the first semiconductor layer 111 and the second semiconductor layer 113 may be the same or different. For example, the doping concentration of the first conductive dopant added to the first semiconductor layer 111 may be higher than the doping concentration of the first conductive dopant added to the second semiconductor layer 113. Accordingly, the first semiconductor layer 111 may diffuse the current supplied by the second semiconductor layer 113.

In addition, the semiconductor material of the first semiconductor layer 111 and the second semiconductor layer 113 may be the same or different. The first semiconductor layer 111 and the second semiconductor layer 113 may be formed of the same material, thereby preventing damage to quality. In addition, the first semiconductor layer 111 and the second semiconductor layer 113 may be formed of different materials to improve light extraction efficiency. For example, the first semiconductor layer 111 may be formed of a material having a lower refractive index than the second semiconductor layer 113 to improve light extraction efficiency.

At least one of the first semiconductor layer 111 and the second semiconductor layer 113 may have a superlattice structure using at least two different materials. For example, the GaN / AlGaN pair may be formed in two or more cycles, or the GaN / AlGaN / InGaN pair may be disposed in two or more cycles, but the present invention is not limited thereto.

An upper surface of the first conductive semiconductor layer 110 may be formed as a flat surface or may be formed as a light extraction structure such as an uneven structure. The uneven structure has a side cross-sectional shape includes at least one of hemispherical shape, polygonal shape, horn shape, columnar shape, and also includes regular or irregular size or spacing. The light extraction structure may change the critical angle of light incident on the upper surface of the first conductive semiconductor layer 110 to improve light extraction efficiency. The light extracting structure of the first conductive semiconductor layer 110 may be formed in an entire region or in a partial region, but is not limited thereto.

An active layer 120 is formed below the first conductive semiconductor layer 110, and the active layer 120 may be formed of a single well structure, a multi well structure, a single quantum well structure, or a multi quantum well structure. In addition, the active layer 120 may include a quantum wire structure or a quantum dot structure.

The active layer 120 may be formed in a cycle of a well layer and a barrier layer using a compound semiconductor material of a group III-V element. The well layer is formed of a semiconductor layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and the barrier layer is may be formed of a semiconductor layer having a compositional formula of _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer may be formed of a material having a band gap higher than that of the well layer.

The active layer 120 may include, for example, at least one period of a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, and a period of the InGaN well layer / InGaN barrier layer. . The thickness of the active layer 120 may be formed in the range of 1nm-30nm, but is not limited thereto.

A first conductive clad layer (not shown) may be disposed between the active layer 120 and the first conductive semiconductor layer 110, and between the active layer 120 and the second conductive semiconductor layer 130. A second conductive cladding layer and / or an undoped semiconductor layer may be formed. The first and second conductivity-type cladding layers may be formed of a GaN-based semiconductor, and the band gap may be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 130 is formed under the active layer 120, and the second conductive semiconductor layer 130 is a compound semiconductor of a group III-V element doped with a second conductive dopant. , GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductive semiconductor layer 130 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be.

The second conductive semiconductor layer 130 may be a p-type semiconductor layer, and the second conductive dopant may include a p-type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 130 may be formed of a plurality of layers, and the first layer adjacent to the active layer 120 may be formed of AlGaN or InAlGaN, and may be used as an electron barrier layer. The second layer further disposed below may be formed of a material layer different from the first layer, for example, GaN. The second conductive semiconductor layer 130 may be formed to a thickness of 10nm to 300nm, but is not limited thereto.

Also, a semiconductor layer having a polarity opposite to that of the second conductive type may be formed under the second conductive type semiconductor layer 130. Accordingly, at least one of the n-p junction, the p-n junction, the n-p-n junction, and the p-n-p junction structure may be formed in the light emitting structure layer 135. In the following description, a structure in which the second conductive semiconductor layer 130 is disposed on the lowermost layer of the light emitting structure layer 135 will be described as an example.

At least one side surface of the light emitting structure layer 135 may be formed to be perpendicular to or inclined with respect to the bottom surface of the light emitting structure layer 135.

Different first and second electrode layers 150 and 170 are disposed under the light emitting structure layer 135 to supply power to the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130. Done. The first and second electrode layers 150 and 170 overlap each other in the vertical direction.

The first electrode layer 150 is electrically connected to the second conductive semiconductor layer 130, and the second electrode layer 170 is electrically connected to the first conductive semiconductor layer 110.

The first electrode layer 150 includes an ohmic layer 148, a reflective layer 152, and a diffusion layer 154, and the ohmic layer 148 is disposed under the light emitting structure layer 135 to form the second conductive type. The ohmic contact with the bottom surface of the semiconductor layer 130, the reflective layer 152 is in contact with the bottom of the ohmic layer 148 reflects the light incident through the ohmic layer 148, the diffusion layer 154 Is disposed under the reflective layer 152 and supplies power supplied from the pad 151 to the reflective layer 152.

The ohmic layer 148 may include at least one conductive material, and may be formed of a single layer or multiple layers. The ohmic layer 148 may have ohmic characteristics and be disposed in a layer under the second conductive semiconductor layer 130 or may be in contact with a pattern having a plurality of holes. The material of the ohmic layer 148 may include at least one of a metal, a metal oxide, and a metal nitride material. The ohmic layer 148 includes a light-transmissive material, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO). ), Indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Pt, Ni, Au, Rh, and Pd. The ohmic layer 148 is formed of a material having a transmittance of 50% or more with respect to the wavelength at which the transmittance is incident.

In addition, the ohmic layer 148 may be formed of one or a plurality of layers of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a material composed of two or more alloys thereof. Can be.

 The reflective layer 152 includes a metal, for example, one or more of materials consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and alloys of two or more thereof. It can be formed in layers. The reflective layer 152 is made of a material of 50% or more with respect to the wavelength at which the reflectance is incident.

The width of at least one of the ohmic layer 148 and the reflective layer 152 may be equal to or wider than a bottom surface of the light emitting structure layer 135.

A diffusion layer 154 is disposed below the reflective layer 152, and the diffusion layer 154 includes a metal and has a good electrical conductivity. For example, Sn, Ga, In, Bi, Cu, Ni, Ag, Mo , Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si and at least one of these optional alloys. The diffusion layer 154 may function as a current diffusion layer. The diffusion layer 154 includes a contact portion 155 disposed closer to the second conductive semiconductor layer 130 than other regions, and the contact portion 155 of the second conductive semiconductor layer 130 is formed. It may be in contact with the bottom surface. A portion of the contact portion 155 of the diffusion layer 154 protrudes outwardly than the side surface of the light emitting structure layer 135 and contacts the bottom surface of the pad 151. The contact portion 155 of the diffusion layer 154 may be in contact with the side surfaces of the ohmic layer 148 and the reflective layer 152. The first electrode layer 150 electrically connects the pad 151 and the second conductive semiconductor layer 130.

The pad 151 may include at least one of Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Cu, and Au or an alloy mixed with a plurality of materials. Or it may be formed in a multi-layer, but is not limited thereto.

The second electrode layer 170 includes at least one of an ohmic layer 172, a bonding layer 176, and a conductive support member 178. The ohmic layer 172 may include at least one of a metal, a metal oxide, and a metal nitride, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZON (IZO nitride), and indium zinc tin oxide (IZTO). ), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx , RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, It may be formed of one layer or a plurality of layers among Au, Hf and materials composed of two or more of these alloys.

The ohmic layer 172 includes a plurality of contact electrodes 171, and the plurality of contact electrodes 171 protrude from the ohmic layer 172 in the direction of the first conductive semiconductor layer 110. The contact electrode 171 passes through the first electrode layer 150, the second conductive semiconductor layer 130, and the active layer 120 to form a first semiconductor layer of the first conductive semiconductor layer 110 ( The bottom surface 115 of the 111 is in ohmic contact. The center of the contact electrode 171 protrudes in the vertical direction with respect to the first electrode layer 150, and its circumferential surface is connected to a surface perpendicular to the inclined surface. The contact electrode 171 may have a circular or polygonal shape when viewed from above, but is not limited thereto.

An upper surface of the contact electrode 171 of the ohmic layer 172 may be disposed between the upper surface of the active layer 120 and the upper surface of the first conductive semiconductor layer 110. The lower surface 115 of the first semiconductor layer 111 to which the contact electrode 171 of the ohmic layer 172 contacts is a Ga-face, and may have a flat structure.

The insulating layer 161 electrically insulates the contact electrode 171 of the ohmic layer 172 from another semiconductor layer. For example, the insulating layer 161 and a portion 162 thereof may include the ohmic layer 172, the first conductive semiconductor layer 110, the active layer 120, the second conductive semiconductor layer 130, and It is disposed between the first electrode layer 150 to block the electrical contact.

A contact electrode formed on a circumferential surface of the first hole 141 formed in the insulating layer 161 and the first electrode layer 150 and the light emitting structure layer 135, and disposed in the first hole 141. Insulate the perimeter of 171). In addition, the protection part 163 of the insulating layer 161 may be disposed on the side surface of the contact part 155 of the diffusion layer 154.

The contact electrodes 171 of the ohmic layer 172 may be plural and disposed to be spaced apart from each other to diffuse a current.

A bonding layer 176 is disposed below the ohmic layer 172, and a conductive support member 178 is disposed below the bonding layer 176. The bonding layer 176 includes at least one metal layer or conductive layer, and includes a barrier metal and / or a bonding metal. The material of the bonding layer 176 is, for example, Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si , Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu-Si, Ag-Cd-Cu, Cu -Sb, Cd-Cu, Al-Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu , Au-Ag-Cu, Cu-Cu 2 O, Cu-Zn, Cu-P, Ni-B, Ni-Mn-Pd, Ni-P, Pd-Ni, but may include at least one of Do not. The bonding layer 176 may have a thickness of 5 μm to 9 μm, but is not limited thereto.

The conductive support member 178 includes a conductive substrate. The conductive support member 178 is a base substrate or a conductive support member, and implemented with at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu-W). Can be. In addition, the conductive support member 178 may be implemented as a carrier wafer, such as a substrate such as Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN. Alternatively, the conductive support member 178 may be implemented as a conductive sheet. The conductive support member 178 may be formed to 30 ~ 300㎛, it is not limited thereto.

2 and 3, a plurality of first holes 141 penetrating into the light emitting structure layer 135 from a lower surface of the first electrode layer 150 to a lower surface 115 of the first semiconductor layer 111. ) Is formed, an insulating layer 161 is disposed around the inner circumference of the plurality of first holes 141, and a contact electrode 171 is disposed around the inner circumference of the insulating layer 161. As illustrated in FIG. 1, the plurality of first holes 141 may be formed between 1% and 20% of the area of the upper surface of the chip, and the number of the first holes 141 may be in the range of 1-50. In addition, the interval between the adjacent first holes 141 may be the same interval, or at least one may be arranged at different intervals. The gap G1 between the pad region 137 on which the pad 151 is formed and the first hole 141 may be spaced apart for current diffusion.

As shown in FIG. 3, the thickness T1 of the first semiconductor layer 111 may be formed in a range of 1 μm or more, for example, in a range of 1-5 μm, and the thickness T2 of the second semiconductor layer 113 may be 0.5. Or more, for example, in the range of 0.5 μm-3 μm.

A portion 162 of the insulating layer 161 is disposed under the first electrode layer 150 to insulate the first electrode layer 150 from the second electrode layer 170. The insulating layer 161 may be formed of a material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

The contact electrode 171 has a structure in which a part of the second electrode layer 170 protrudes and is in contact with the bottom surface 115 of the first semiconductor layer 111. When the lower surface 115 of the first semiconductor layer 111 is a GaN-based semiconductor layer, it becomes a Ga-face. The circumferential surface of the first hole 141 includes a first inner surface 41 perpendicular to the vertical direction and an inclined second inner surface 42.

The first inner side surface 41 is inclined at a first angle θ1 with respect to the bottom surface of the light emitting structure layer 135, and the second inner side surface 42 has a bottom surface of the light emitting structure layer 135. The first angle θ1 and the second angle θ2 are different from each other, and the first angle θ1 is an obtuse angle and is formed in a range between 90 degrees <θ1 <180 degrees, for example, in a range of 100 degrees to 130 degrees. Can be. The second angle θ2 may be smaller than the first angle θ1, or may be formed at a right angle or in a range of 30 degrees <θ1 <90 degrees.

The height T3 of the first inner side surface 41 may be formed to be 0.5 μm or more, and the height T5 of the second inner side surface 42 may be the second from the end of the first inner side surface 41. It is the distance to the lower surface of the conductive semiconductor layer 130. The first inner side surface 41 may be spaced apart from the upper surface of the active layer 120 by a predetermined distance T4 or may not be spaced apart. As the distance T4 is smaller, the emission area of the active layer 120 may be reduced. That is, the height T3 of the first inner side surface 41 may be formed up to an upper surface of the active layer 120. In this case, the height T5 of the second inner side surface 42 may be formed of the active layer 120. It may be up to an upper surface and a lower surface of the second conductive semiconductor layer 130.

The upper widths D1 in which the first inner side surfaces 41 are disposed in the first holes 41 may be the same, or may be formed to have a width that narrows toward the lower direction. The lower width of the first hole 41 in which the second inner side surface 42 is disposed is formed to be greater than or equal to the upper width D1, and gradually increases in a downward direction (for example, a lower surface direction of the light emitting structure layer). You lose. The upper width D1 may be formed to be several tens of micrometers or more, for example, 10 micrometers or more for contact with the contact electrode 171.

The height from the active layer 120 to the end of the first hole 141, that is, the lower surface 115 of the first semiconductor layer 111 is the thickness T2 of the second semiconductor layer 113 or 0.5 μm or more. For example, it may be formed in the range 0.5㎛-3㎛.

The first hole 141 is disposed through the first electrode layer 150, and may be formed in a circle or polygonal shape between a bottom surface of the light emitting structure layer 135 and a bottom surface of the first electrode layer 150. .

Referring to FIGS. 4A to 4C, the upper shape of the first hole 141 may be formed in a polygonal shape such as a circle, a rectangle, or a hexagon. Here, the upper shape of the first hole 141 is the shape of the first hole 141 adjacent to the first semiconductor layer 111 shown in FIG. 3.

Referring to FIG. 5, the bottom shape of the first hole may be a first hole shape formed in the second conductive semiconductor layer 130 of FIG. 3 and may have a hexagonal structure. The lower width D3 of the first hole 141 may be wider than the upper width D1, and the width D2 of the second hole 143 is the same as or different from the upper width D1. But it is not limited thereto.

Referring to FIG. 3, the first embodiment reduces the area of the active layer 120 due to the inclined structure of the second inner side 42 by the height of the first inner side 41 of the first hole 141. It can reduce your chances. In addition, since the mesa etching for forming the first hole 141 is not performed, damage to the active layer 120 and the surrounding layers can be reduced.

6 and 7 are side cross-sectional views of a light emitting device and a B-B side cross-sectional view thereof as a second embodiment. In describing the second embodiment, the same structure as the first embodiment will be described with reference to the first embodiment.

6 and 7, in the light emitting device, a light extraction structure 112 is disposed on an upper surface of the light emitting structure layer 135, for example, the first semiconductor layer 111. It may include an uneven pattern. The protective layer 190 may be disposed on the surface of the light emitting structure layer 135, and the protective layer 190 may be formed of an insulating material. A portion 192 of the protective layer 190 may be formed in a concave-convex pattern by the light extraction structure 112 of the first semiconductor layer 111, but is not limited thereto.

The width of the light emitting structure layer 135 may be formed to be narrower than the width of the first electrode layer 150, and the upper circumference 138 of the first electrode layer 150 may be smaller than the side surface of the light emitting structure layer 135. Can be exposed further outward. The pad 151 may be disposed along at least one outer surface of the light emitting structure layer 135, and the pad 151 and the electrode pattern 156 extending therefrom may be disposed with respect to the light emitting structure layer 135. They may be arranged on opposite sides of each other or on sides adjacent to each other to spread current. The electrode pattern 156 has a continuous loop shape or a discontinuous loop shape as shown in FIG. 6 and contacts at least one of the ohmic layer 148, the reflective layer 152, and the diffusion layer 154 of the first electrode layer 150. Can be.

8 and 9 are plan views and side cross-sectional views of a light emitting device according to a third embodiment. Some configurations of the third embodiment will be referred to the embodiments disclosed above.

8 and 9, a portion 192 of the protective layer 190 may be formed in an irregular concave-convex structure by the light extraction structure of the first semiconductor layer 111. The contact portion 155 of the diffusion layer 154 of the first electrode layer 150 may be spaced apart from the bottom surface of the light emitting structure layer 135.

10 is a diagram illustrating a modification of FIG. 1. Referring to FIG. 10, the pads 151 may include a plurality of pads, and the plurality of pads 151 may be spaced apart from each other. For example, the plurality of pads 151 may be disposed adjacent to different sides, disposed in areas facing each other, or disposed in a diagonal direction, but are not limited thereto.

11 is a side sectional view showing a light emitting device according to the fourth embodiment. Some components of the fourth embodiment will be referred to the description of the embodiments disclosed above.

Referring to FIG. 11, in the light emitting device, a distance between the contact electrode 171 and the pad 151 may be spaced at least 1/2 of the chip. Further, the first holes 141 may not be arranged in rows of MⅹN, but may be arranged in rows of 1ⅹN or Mⅹ1 (M and N are two or more natural numbers).

12 is a side cross-sectional view illustrating a light emitting device according to a fifth embodiment. Some configurations of the fifth embodiment will be referred to the embodiment disclosed above.

Referring to FIG. 12, light emitting devices are disposed such that different semiconductor layers overlap each other in a horizontal direction, that is, a direction perpendicular to the thickness of the light emitting structure layer 135 around the first hole 141. For example, at least one of the active layer 120 and the second conductive semiconductor layer 130 may overlap the inner surface 114 of the second semiconductor layer 113 in the horizontal direction. Light may also be generated in such overlapped areas, and may improve light extraction efficiency.

An inner side 122 of the active layer 120 is formed on an inner side 114 of the second semiconductor layer 113 of the first conductive semiconductor layer 110 and an inner side 124 of the active layer 120. An inner portion 132 of the second conductive semiconductor layer 130 is formed thereon. The inner part 122 of the active layer 120 and the inner part 132 of the second conductive semiconductor layer 130 overlap each other in the horizontal direction.

The thickness of the inner portion 122 of the active layer 120 may be formed in a ratio of 1/3 to 1/6 or 5 to 80% of the thickness of the active layer 120. The thickness of the inner portion 132 of the second conductive semiconductor layer 130 may be formed in a ratio of 1/3 to 1/6 or 5 to 80% of the thickness of the second conductive semiconductor layer 130. have.

13 is a side sectional view showing a light emitting device according to the sixth embodiment. Some configurations of the sixth embodiment will be referred to the embodiment disclosed above.

Referring to FIG. 13, in the light emitting device, an inner side 132 of the second conductive semiconductor layer 130 is stacked on the inner side 124 of the active layer 120 around the first hole 141. The inner part 122 of the active layer 120 and the inner part 132 of the second conductive semiconductor layer 130 are disposed to overlap in a horizontal direction perpendicular to the thickness direction of the light emitting structure layer 135. The thickness of the inner part 132 of the second conductive semiconductor layer 130 may be formed at a ratio of 1/3 to 1/6 of the thickness of the active layer 120.

14 is a side sectional view showing a light emitting device according to the seventh embodiment. Some configurations of the seventh embodiment will be referred to the embodiment disclosed above.

Referring to FIG. 14, the bottom surface 116 of the first semiconductor layer 114 may be formed as a rough surface and is in contact with the contact electrode 171. The rough surface may improve the contact area with the contact electrode 171 and may change the critical angle of incident light to improve light extraction efficiency.

The pad 158 may be connected to the connection part 157, and a part 157A of the connection part 157 may be connected to the contact part 155 of the diffusion layer 154. The pad 158 is disposed on the first conductive semiconductor layer 110, and the pad 158 is in contact with an upper surface of the protective layer 190. By disposing the pad 158 on the first conductive semiconductor layer 110, the distance D4 between the outer sidewall of the chip and the outer sidewall of the light emitting structure layer 135 may be reduced compared to FIG. 1. Accordingly, the area of the active layer 120 can be maximized compared to the chip size.

15 is a side sectional view showing a light emitting device according to an eighth embodiment. Some configurations of the eighth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 15, the light emitting device includes a light emitting structure layer 235, a first electrode layer 250 disposed under the light emitting structure layer 235, and a plurality of first holes in the light emitting structure layer 235. 241, an insulating layer 261, a second electrode layer 270 having a contact electrode 271 disposed under the light emitting structure layer 235 and partially disposed in the first hole 241, and a partial region. And pad 251 disposed at 237.

The light emitting structure layer 235 includes a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 having a first semiconductor layer 211 and a second semiconductor layer 213. Include. A third semiconductor layer 205 including at least one of a buffer layer and an undoped semiconductor layer may be disposed on the light emitting structure layer 235, but is not limited thereto.

The passivation layer 290 may be formed on the surface of the light emitting structure layer 235, and a part 292 may be formed on a rough surface.

The first electrode layer 250 includes an ohmic layer 248, a reflective layer 252, and a diffusion layer 254, and the second electrode layer 270 includes an ohmic layer 272, a bonding layer 274, and a conductive support member. 278. A portion 262 of the insulating layer 261 is disposed between the first and second electrode layers 250 and 270 to insulate each other. The contact electrode 271 of the ohmic layer 272 is disposed in the first hole 241 of the light emitting structure layer 235, and the contact electrode 271 is formed in the second hole 243 of the insulating layer 261. Is placed.

16 is a side sectional view showing a light emitting device according to the ninth embodiment. Some configurations of the ninth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 16, in the light emitting device, a third semiconductor layer 205 is disposed on the light emitting structure layer 235, and the third semiconductor layer 205 includes at least one of a buffer layer, a low conductive layer, and an undoped semiconductor layer. It may comprise a layer. The light extracting structure 206 such as an uneven pattern may be formed on an upper surface of the third semiconductor layer 205.

The contact portion 255 of the diffusion layer 254 protrudes from the upper surface of the diffusion layer 254 to a predetermined height D5 to be disposed adjacent to the outer sidewall of the active layer 220.

17 is a side sectional view showing a light emitting device according to a tenth embodiment. Some configurations of the tenth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 17, the light emitting device may include a light emitting structure layer 335, first electrode layers 350 and 355 disposed under the light emitting structure layer 335, and a plurality of first holes in the light emitting structure layer 335. 341, an insulating layer 361, a second electrode layer 372 having a contact electrode 371 disposed under the light emitting structure layer 335 and partially disposed in the first hole 341, and a partial region. The pad 351 is included in 337.

The light emitting structure layer 335 may include a first conductive semiconductor layer 310, an active layer 320, and a second conductive semiconductor layer 330 having a first semiconductor layer 311 and a second semiconductor layer 313. Include. A light extracting structure such as an uneven pattern may be formed on an upper surface of the first semiconductor layer 311.

The second electrode layer 372 may include an ohmic layer and a diffusion layer, but is not limited thereto.

The first electrode layers 350 and 355 may include a conductive layer 350 and a conductive support member 355, and the conductive layer 350 may include a plurality of metal layers such as an ohmic material and a reflective layer.

The second electrode layer 372 may include an ohmic layer and a diffusion layer, and is in contact with the first semiconductor layer 311 by the contact electrode 371. The pad 355 is in contact with the contact portion of the second electrode layer 372.

The insulating layer 361 is disposed in the first hole 341 and covers the circumference of the contact electrode 371. A portion 362 of the insulating layer 361 may insulate the second electrode layer 372 from the first electrode layers 350 and 355.

18 is a side sectional view showing a light emitting device according to an eleventh embodiment. Some configurations of the eleventh embodiment will be referred to the eleventh embodiment.

Referring to FIG. 18, in the light emitting device, the bottom surface 315 of the first semiconductor layer 311 is formed with roughness such as fine irregularities. The roughness may improve light extraction efficiency and adhesion to the contact electrode 371. An upper surface of the first semiconductor layer 311 may have a light extraction structure 312 such as an uneven pattern.

The protective layer 390 may be formed on the surface of the light emitting structure layer 335 or disposed between the pad 351 and the outer sidewall of the light emitting structure layer 335.

19 is a side sectional view showing a light emitting device according to a twelfth embodiment. The twelfth embodiment will be referred to the above embodiment.

Referring to FIG. 19, the light emitting device includes a light emitting structure layer 435, a first electrode layer 450 disposed below the light emitting structure layer 435, and a plurality of first holes in the light emitting structure layer 435. 441, an insulating layer 461, a second electrode layer 470 having a contact electrode 471 disposed under the light emitting structure layer 435, and partially disposed in the first hole 441, and a partial region. Pad 451 disposed at 437.

The light emitting structure layer 435 may include a first conductive semiconductor layer 410 having an first semiconductor layer 411 and a second semiconductor layer 413, an active layer 420, and a second conductive semiconductor layer 430. Include.

The first electrode layer 450 includes an ohmic layer 448, a reflective layer 452, and a diffusion layer 454, and the contact portion 455 of the diffusion layer 454 is disposed in the center region of the light emitting structure layer 435. It is arranged in the recess 437. The concave portion 437 is an area where the light emitting structure layer 435 is etched, and a contact portion 455 of the diffusion layer 454 is disposed under the concave portion 437, and a pad (or pad) is disposed on the contact portion 455. 451 is disposed. A protective layer 490 is disposed around the partial region 437 of the light emitting structure layer 435 to block contact with inner sidewalls of the light emitting structure layer 435.

The second electrode layer 470 includes at least one of an ohmic layer 472 and a conductive support member 476. A portion 462 of the insulating layer 461 is disposed between the first and second electrode layers 450 and 470 to insulate each other. The contact electrode 471 of the ohmic layer 472 is disposed in the first hole 441 of the light emitting structure layer 435, and is insulated from inner side surfaces of the light emitting structure layer 435.

20 to 28 are views illustrating a manufacturing process of the light emitting device of FIG. 2.

Referring to FIG. 20, the growth substrate 101 may be loaded into growth equipment, and may be formed in a layer or pattern form using a compound semiconductor of group II to group VI elements thereon.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The growth substrate 101 is a growth substrate using a conductive substrate or an insulating substrate, for example, sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , GaAs, etc. It may be selected from the group consisting of. An upper surface of the growth substrate 101 may have a lens-shaped or stripe uneven pattern. In addition, a buffer layer 102 may be formed on the growth substrate 101. The buffer layer 102 reduces the difference in lattice constant between the growth substrate 101 and the nitride semiconductor layer, and the material is GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be selected. An undoped semiconductor layer may be formed on the buffer layer 102, and the undoped semiconductor layer may be formed of an undoped GaN-based semiconductor, and may be formed of a semiconductor layer having lower conductivity than the n-type semiconductor layer.

A first semiconductor layer 111 is formed on the buffer layer 102, and a mask pattern 103 is formed on the first semiconductor layer 111. The mask pattern 103 is disposed in an area corresponding to the first hole of FIG. 1. The mask pattern 103 may have a thickness in a range of 0.5 μm to 3 μm, but is not limited thereto. The first semiconductor layer 111 may be formed of an n-type semiconductor layer.

Referring to FIG. 21, a second semiconductor layer 113 may be formed on the first semiconductor layer 111, and the second semiconductor layer 113 may be formed of an n-type semiconductor layer. The first and second semiconductor layers 111 and 113 become the first conductive semiconductor layer 110. Here, the second semiconductor layer 113 may be formed to be thicker than the thickness of the mask pattern 103 or the thickness of the mask pattern 103. According to the thickness of the mask pattern 103 and the thickness of the second semiconductor layer 113, the first inner surface (41 of FIG. 3) and the second inner surface (FIG. 3) disposed on the circumferential surface of the first hole 141. The height of 42 of 3 may be determined.

The active layer 120 is formed on the second semiconductor layer 113, and the second conductive semiconductor layer 130 is sequentially stacked on the active layer 120. Other layers may be further disposed above or below each of the semiconductor layers, and may be formed in a superlattice structure using, for example, a group III-V compound semiconductor layer, but is not limited thereto.

The first and second semiconductor layers 111 and 113 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs. , GaAsP, AlGaInP and the like. For example, the composition formula of the first and the second semiconductor layer (111 113) is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may be formed of a semiconductor layer having a. The first and second semiconductor layers 111 and 113 may be n-type semiconductor layers, and the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, Te, and the like. The first and second semiconductor layers 111 and 113 may be formed as a single layer or a multilayer, but are not limited thereto. At least one of the first and second semiconductor layers 111 and 113 is a superlattice alternately arranged with two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. It may include a structure.

The active layer 120 may include a single quantum well structure, a multi quantum well structure, a quantum wire structure, or a quantum dot structure. The active layer 120 may be formed in a cycle of a well layer and a barrier layer using a compound semiconductor material of a group III-V element. The well layer is formed of a semiconductor layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and the barrier layer is may be formed of a semiconductor layer having a compositional formula of _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer may be formed of a material having a band gap higher than that of the well layer.

A first cladding layer may be formed between the active layer 120 and the first conductive semiconductor layer 110, and the first cladding layer may be formed of a first conductive GaN-based semiconductor or a material of the active layer 120. It may be formed of a material having a high band gap. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the first clad layer may be higher than the band gap of the barrier layer.

The active layer 120 may include, for example, at least one period of a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, and a period of the InGaN well layer / InGaN barrier layer. .

A second cladding layer may be disposed between the active layer 120 and the second conductive semiconductor layer 130, and the second cladding layer may be formed of an n-type GaN-based semiconductor, and a band gap of the second cladding layer may be used. May be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 130 is formed on the active layer 120, and the second conductive semiconductor layer 130 is a compound semiconductor of a group III-V element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductive type semiconductor layer 130 is a semiconductor layer having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed.

The second conductive semiconductor layer 130 may be a p-type semiconductor layer, and the second conductive dopant may include a p-type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 130 may include a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP are alternately disposed. Can be.

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure layer 135. In addition, a third conductive semiconductor layer, for example, a semiconductor layer having a polarity opposite to that of the second conductive type, may be formed on the second conductive semiconductor layer 130. Accordingly, at least one of the n-p junction, the p-n junction, the n-p-n junction, and the p-n-p junction structure may be formed in the light emitting structure layer 135. In the following description, a structure in which the second conductive semiconductor layer 130 is disposed on the uppermost layer of the light emitting structure layer 135 will be described as an example.

A first hole 141 is formed in an area of the light emitting structure layer 135 on which the mask pattern 103 is disposed, and a circumferential surface of the first hole 141 is formed to a thickness of the mask pattern 103. The upper surface of the light emitting structure layer 135 is in contact with the side surface of the mask pattern 103, and has a second angle θ2, for example, from the mask pattern 103 to an upper surface of the second conductive semiconductor layer 130. It is formed at an angle of obtuse angle with respect to.

The inner side surfaces of the second semiconductor layer 113 may be formed at different angles from the circumference of the first hole 141. For example, a lower circumference of the first hole 141 on which the mask pattern 103 is disposed may be formed at an angle smaller than the second angle θ2, and a nitride semiconductor layer is formed on the upper circumference of the mask pattern 103. It can be formed at the second angle θ2 by growing along the crystal plane of. In addition, since the first semiconductor layer 111 is exposed by the first hole 141, a separate etching process, for example, dry etching may not be performed, and thus the damage of the active layer 120 may be prevented.

Referring to FIG. 22, a protection pattern 103A may be formed on the mask pattern 103, and the protection pattern 103A may be formed of the same material as the mask pattern. The protective pattern 103A may be formed after the mask pattern 103A is removed, but is not limited thereto.

The protection pattern 103A is formed higher than the top surface of the second conductive semiconductor layer 130 to guide the formation of the first electrode layer.

Referring to FIG. 23, a first electrode layer 150 including an ohmic layer 148, a reflective layer 152, and a diffusion layer 154 is formed on the second conductive semiconductor layer 130. The first electrode layer 150 may be formed by a sputtering method or a deposition method, but is not limited thereto. The ohmic layer 148 is in ohmic contact with an upper surface of the light emitting structure layer 135, and the reflective layer 152 is in contact with the ohmic layer 148 to reflect light incident through the ohmic layer 148. The diffusion layer 154 is disposed on the reflection layer 152 and diffuses the power to be supplied to the reflection layer 152.

The contact portion 155 of the diffusion layer 154 may contact the top surface of the second conductive semiconductor layer 130 through side surfaces of the reflective layer 152 and the conductive layer 148.

Referring to FIGS. 23 and 24, when the mask pattern 103 and the protection pattern 103A are removed, the mask pattern 103 is formed inside the light emitting structure layer 135 and the first electrode layer 150. A plurality of first holes 141 are exposed in an area corresponding to the first hole 141, and a depth of the first holes 141 is such that a portion of the first semiconductor layer 111 is exposed. The exposed surface 115 of the first semiconductor layer 111 by the first hole 141 is a Ga-face, and may be a flat surface or an uneven surface. By forming the first holes 141 in this manner, it is not necessary to perform a process such as mesa etching that is separately performed to expose the first semiconductor layer 111, thereby reducing damage to the active layer 120. .

An insulating layer 161 is formed on the first hole 141, and a portion 162 of the insulating layer 161 is formed on the first electrode layer 150. The insulating layer 161 may be formed by a sputtering method or a deposition method, but is not limited thereto. It is formed on the circumferential surface corresponding to the first electrode layer 150 and the light emitting structure layer 135. The insulating layer 161 filled in the first hole 141 may form a second hole 143 by a drill process.

24 and 25, a second electrode layer 170 is formed on the insulating layer 161, and the contact electrode 171 of the second electrode layer 170 is disposed in the second hole 143. The insulating layer 161 and a portion 162 of the insulating layer 161 may be blocked from other materials. The contact electrode 171 of the second electrode layer 170 is in ohmic contact with the top surface 115 of the first semiconductor layer 111.

The second electrode layer 170 includes at least one of an ohmic layer 172, a bonding layer 176, and a conductive support member 178.

The ohmic layer 172 and the bonding layer 176 may be formed of at least one of a sputtering method, a plating method, a deposition method, and a printing method. The ohmic layer 172 includes at least one of a metal, a metal nitride, and a metal oxide, and for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed of one layer or a plurality of layers of Hf and a material composed of two or more alloys thereof.

The bonding layer 176 is disposed on the ohmic layer 172, and may be a barrier metal or a bonding metal, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. It may include at least one of. The bonding layer 176 may be formed of at least one of a deposition method, a sputtering method, and a plating method, or may be attached to a conductive sheet. The bonding layer 176 may have a thickness of 5 μm to 9 μm, but is not limited thereto. The bonding layer 176 may not be formed, but is not limited thereto.

The conductive support member 178 is disposed on the bonding layer 176, and as a base substrate, copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu) -W) or the like. In addition, the conductive support member 178 may be implemented as a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN, etc.), and may include a circuit pattern of a board or a lead frame of a package. It is bonded by solder on it. The conductive support member 178 may have a thickness of 30 μm or more.

Referring to FIGS. 26 and 27, the growth substrate 101 may be removed by physical or / and chemical methods. The growth method of the growth substrate 101 is removed by a laser lift off (LLO) process. That is, the growth substrate 101 is lifted off by irradiating the growth substrate 101 with a laser having a predetermined wavelength. Alternatively, the growth substrate 101 may be separated by removing the buffer layer 102 disposed between the growth substrate 101 and the first conductive semiconductor layer 110 using a wet etching solution. The top surface of the first semiconductor layer 111 may be exposed by removing the growth substrate 101 and etching or polishing the buffer layer 102. An upper surface of the first semiconductor layer 111 may be an N-face, and may be a surface closer to the growth substrate.

The top surface of the first conductor layer 111 may be etched by polishing such as inductively coupled plasma / reactive ion etching (ICP / RIE), or polished with a polishing apparatus.

The first etching may be performed to remove a channel region or an isolation region, which is a boundary region 137 of the light emitting structure layer 135, that is, a boundary region 137 between the chips and the contact portion 155 of the diffusion layer 154. Expose The first layer includes wet etching and / or dry etching.

An upper surface of the first semiconductor layer 111 may be formed as a light extraction structure, and the light extraction structure may be formed as a roughness or a pattern. The light extracting structure) may be formed by a wet or dry etching method.

Referring to FIG. 28, a pad 151 may be formed on the contact portion 155 of the diffusion layer 154. The pad 151 protrudes in the direction of the active layer 120 on the contact portion 155.

In addition, a protective layer may be further formed on the surface of the light emitting structure layer 135, but is not limited thereto. The pad 151 is a wire bonded portion, and may be disposed on a predetermined portion of the light emitting structure layer 135, and may be formed in one or a plurality.

FIG. 29 is a diagram illustrating an example of a manufacturing process of the light emitting device of FIG. 12. The manufacturing process of FIG. 12 will be referred to the manufacturing process of FIG. 2 and only the other parts will be described.

Referring to FIG. 29, a mask pattern 103 is disposed on the first semiconductor layer 111 of the first conductive semiconductor layer 110, the second semiconductor layer 113 is formed, and then the active layer 120 is formed. ) And the second conductive semiconductor layer 130. In this case, the inner portion 122 of the active layer 120 is formed on the inner surface 114 of the second semiconductor layer 113 disposed around the first hole 141, the second conductive semiconductor layer The inner side 132 of the 130 is formed on the inner side 124 of the active layer 120 disposed around the first hole 141. The subsequent manufacturing process will be referred to the example of FIGS. 22 to 29.

An inner part 122 of the active layer 120 and an inner part 132 of the second conductive semiconductor layer 130 may be disposed in the first hole 141 to protect the inside of the active layer 120. It may have an np junction or a pn junction structure.

The light emitting device as described above may be mounted on a board after being packaged or mounted on a board. Hereinafter, a light emitting device package or a light emitting module having the light emitting device of the above-described embodiment (s) will be described.

30 is a cross-sectional view of a light emitting device package according to the thirteenth embodiment.

Referring to FIG. 30, the light emitting device package 500 may include a body 515, a first lead frame 521 and a second lead frame 523 disposed on the body 515, and the body 515. A light emitting device 501 according to an embodiment disposed and electrically connected to the first lead frame 521 and the second lead frame 523, and a molding member 531 surrounding the light emitting device 501. do.

The body 515 may include a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (eg, MCPCB). The body 515 may have an inclined surface formed by the cavity structure around the light emitting device 100. The body 31 may include a reflector 513 having a concave cavity 517 having an open upper portion, and a support 511 supporting the reflector 513, but is not limited thereto.

Lead frames 521 and 523 and the light emitting device 501 are disposed in the cavity 517 of the body 515, and the light emitting device 100 is mounted on the second lead frame 523 and is connected to the connection member 503. It may be connected to the first lead frame 521. The first lead frame 521 and the second lead frame 523 are electrically separated from each other, and provide power to the light emitting device 501. The connection member 503 may be implemented with a wire. In addition, the first lead frame 521 and the second lead frame 523 may increase light efficiency by reflecting light generated from the light emitting device 501, and heat generated from the light emitting device 501. It may also play a role in discharging it to the outside. The lead part 522 of the first lead frame 521 and the lead part 524 of the second lead frame 523 may be disposed on the bottom surface of the body 515.

The first and second lead frames 521 and 523 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may include at least one of platinum (Pt), tin (Sn), silver (Ag), phosphorus (P). In addition, the first and second lead frames 521 and 523 may be formed to have a multilayer structure, but are not limited thereto. The thicknesses of the first and second lead frames 521 and 523 may be 0.3 mm to 1.5 mm, for example, 0.3 mm to 0.8 mm.

The molding member 531 may include a resin material such as silicon or epoxy, and may surround the light emitting device 501 to protect the light emitting device 501. In addition, the molding member 531 may include a phosphor to change the wavelength of light emitted from the light emitting device 531. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor.

A lens may be disposed on the molding member 531, and the lens may be implemented to be in contact with or not in contact with the molding member 531. The lens may have a concave or convex shape.

FIG. 31 is a perspective view of a light emitting device package according to a fourteenth embodiment having the light emitting device, and FIG. 32 is a side cross-sectional view of the light emitting device of FIG.

Referring to FIGS. 31 and 32, the light emitting device package 600 may include a body 610 having a recess 660, a first lead frame 621 having a first cavity 625, and a second cavity 635. The second lead frame 631, the connection frame 646, the light emitting devices 671 and 672, the connection members 604 to 605, the molding member 651, and the paste members 681 and 682 may be included. For the description of the embodiment, the light emitting device package 600 may have a length of 3mm-12mm in the first direction, 3mm-12mm in the second direction orthogonal to the first direction, and a thickness of 800㎛. For example, a configuration in which a plurality of light emitting devices 671 and 672 are disposed will be described as an example, but is not limited thereto.

The body 610 may include at least one of insulation, acceleration, or a metallic material. The body 610 may include at least one of a resin material such as polyphthalamide (PPA), silicon (Si), a metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and a printed circuit board (PCB). It can be formed as one. For example, the body 610 may be made of a resin material such as polyphthalamide (PPA).

As another example, when the body 610 is formed of a conductive material, an insulating film (not shown) is further formed on the surface of the body 610 to electrically short the conductive body 610 with another lead frame. Can be prevented.

The shape of the body 610 may be formed in a shape having a triangle, a square, a polygon, a circle, or a curved surface when viewed from above. The body 610 may include a plurality of side parts 611 ˜ 614, and at least one of the plurality of side parts 611 ˜ 614 may be disposed perpendicularly or inclined with respect to a bottom surface of the body 610. The body 610 describes the first to fourth side parts 611 to 614 as an example, and the first side part 611 and the second side part 612 are opposite sides, and the third side part 613 and the third side part 613 are different from each other. The fourth side portions 614 are opposite sides. The length of each of the first side portion 611 and the second side portion 612 may be different from that of the third side portion 613 and the fourth side portion 614. For example, the first side portion 611 and the second side portion 612 may be different from each other. The length of the side portion 612 (eg, a short side length) may be shorter than the length of the third side portion 613 and the fourth side portion 614. The length of the first side portion 611 or the second side portion 612 may be a distance between the third side portion 613 and the fourth side portion 614, the length direction of the second and third cavities ( 625, 635 may be a direction passing through the center.

The first lead frame 621 and the second lead frame 631 may be disposed on a lower surface of the body 610 to be mounted on a circuit board. As another example, the first lead frame 621 and the second lead frame 631 may be disposed on one side of the body 610 to be mounted on a circuit board. The thickness of the first lead frame 621 and the second lead frame 631 may be formed to 0.2mm ± 0.05 mm. The first and second lead frames 621 and 631 serve as leads for supplying power.

The body 610 includes a concave portion 660, and the concave portion 660 is open at an upper portion thereof and includes a side and a bottom 616. The concave portion 660 may be formed in a shape such as a cup structure, a cavity structure, or a recess structure concave from the upper surface 615 of the body 610, but is not limited thereto. The side of recess 660 may be perpendicular or inclined with respect to its bottom 616. The shape of the concave portion 660 as viewed from above may be circular, elliptical, polygonal (eg, rectangular), or polygonal with corners curved.

The first lead frame 621 is disposed below the first region of the recess 660, and a part of the first lead frame 621 is disposed at the bottom 616 of the recess 660 and at the center thereof. A concave first cavity 625 is disposed to have a lower depth than the bottom 616. The first cavity 625 has a concave shape from the bottom 616 of the concave portion 660 toward the bottom surface of the body 610, for example, a cup structure or a recess shape.

Side and bottom 622 of the first cavity 625 is formed by the first lead frame 621, the peripheral side of the first cavity 625 is the bottom 622 of the first cavity 625. Can be beveled or bent vertically). Two opposite sides of the side surface of the first cavity 625 may be inclined at the same angle or inclined at different angles.

The second lead frame 631 is disposed in a second region spaced apart from the first region of the recess 660, and a part of the second lead frame 631 is disposed at the bottom 616 of the recess 660, and the center of the second lead frame 631 is disposed at the center of the recess 660. The second cavity 635 is formed to have a lower depth than the bottom 616 of the recess 660. The second cavity 635 includes a concave shape, for example, a cup structure or a recess shape, in the direction of the bottom surface of the body 610 from the top surface of the second lead frame 631. The bottom 632 and side surfaces of the second cavity 635 are formed by the second lead frame 631, and the side surface of the second cavity 635 is the bottom 632 of the second cavity 635. It can be bent from or bent vertically from. Two opposite sides of the side surface of the second cavity 635 may be inclined at the same angle or inclined at different angles.

When viewed from above, the first cavity 625 and the second cavity 635 may be formed in the same shape or symmetric with each other, but is not limited thereto.

Each of the central portions of the first lead frame 621 and the second lead frame 631 may be exposed to the lower portion of the body 610, and may be disposed on the same plane or a different plane as a lower surface of the body 610. have.

The first lead frame 621 includes a first lead portion 623, and the first lead portion 623 is disposed under the body 610 and the third side portion 613 of the body 610. Can protrude. The second lead frame 631 includes a second lead part 633, and the second lead part 633 is disposed under the body 610, and the third side part 613 of the body 610. Protrude to the fourth side portion 614 on the opposite side.

The first lead frame 621, the second lead frame 631, and the connection frame 646 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), It may include at least one of chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed in a single layer or multiple layers. The first and second lead frames 621 and 631 may have the same thickness, but the thickness of the first and second lead frames 621 and 631 is not limited thereto.

The bottom shape of the first cavity 625 and the second cavity 635 may be a circle or ellipse having a rectangle, a regular rectangle or a curved surface.

A connection frame 646 is disposed on the bottom 616 of the concave portion 660, and the connection frame 646 is disposed between the first lead frame 621 and the second lead frame 631. Used as a connection terminal. The connection frame 646 may be removed. When the connection frame 646 is removed, the first and second light emitting devices 671 and 672 may be connected to the first lead frame 621 and the second lead frame 631. Can be electrically connected.

The first light emitting device 671 is disposed in the first cavity 625 of the first lead frame 621, and the second light emitting device (2) is located in the second cavity 635 of the second lead frame 631. 672 may be disposed.

The first and second light emitting devices 671 and 672 may selectively emit light in a range of visible light to ultraviolet light, for example, among red LED chips, blue LED chips, green LED chips, and yellow green LED chips. Can be selected. The first and second light emitting devices 671 and 672 include a compound semiconductor light emitting device of a group II-VI element or a group III-V element.

The first light emitting device 671 is connected to the connection frame 646 by a connection member 604. The second light emitting element 672 is connected to the second lead frame 631 disposed on the bottom 616 of the recess 660 by the connecting member 605. The connection members 604 and 605 may be implemented by wires. The connection frame 646 electrically connects the first light emitting device 671 and the second light emitting device 672.

The protection element may be disposed on a portion of the first lead frame 621 or the second lead frame 631. The protection device may be implemented with a thyristor, a zener diode, or a transient voltage suppression (TVS), and the zener diode protects the light emitting device from electro static discharge (ESD). The protection device may be connected to the connection circuits of the first light emitting device 671 and the second light emitting device 672 in parallel to protect the light emitting devices 671 and 672.

A molding member 651 may be formed in the recess 660, the first cavity 625, and the second cavity 635. The molding member 651 may include a translucent resin material such as silicon or epoxy, and may be formed in a single layer or multiple layers.

The first paste member 681 is disposed between the first light emitting element 671 and the bottom 622 of the first cavity 625 to bond and electrically connect each other. The second paste member 682 is disposed between the second light emitting element 672 and the bottom 632 of the second cavity 635 to bond and electrically connect each other.

The first and second paste members 681 and 682 include a conductive adhesive, for example solder.

The molding member 651 may include a phosphor for converting a wavelength of light emitted onto the light emitting devices 671 and 672, wherein the phosphor is one of the first cavity 625 and the second cavity 635. It may be added to the molding member 651 formed in one or all areas, but is not limited thereto. The phosphor excites a part of light emitted from the light emitting devices 671 and 672 to emit light of different wavelengths. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 651 may be formed in a flat shape, concave shape, convex shape, and the like, for example, the surface of the molding member 651 may be formed in a concave curved surface, the concave curved surface is light It can be an exit surface.

The circumference of the recess 660 may be formed to be inclined with respect to the bottom 616 of the recess 660. The circumference of the recess 660 may be formed in a stepped structure to prevent the molding member 651 from overflowing.

The upper surface of the molding member 651 may be formed as a concave, convex or flat surface. In addition, the upper surface of the molding member 651 may be formed of a rough uneven surface, but is not limited thereto.

Although the package of the embodiment is illustrated and described in the form of a top view, it is implemented in a side view to improve the heat dissipation, conductivity, and reflection characteristics as described above. After packaging, the lens may be formed or adhered to the resin layer, but is not limited thereto.

<Lighting system>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 33 and 34 and a lighting device shown in FIG. 35. Etc. may be included.

32 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 32, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device packages 1035 and 30 are disposed on the substrate 1033 at predetermined intervals. Can be arrayed.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 1035 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 1035 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 1035 may directly or indirectly provide light to the light-incident portion on one side of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

34 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 34, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 1124 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 1124 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit 1150.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

35 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 35, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 1534 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 1534 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 1534 may be mounted on the substrate 1532. Each of the light emitting device packages 1534 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 1534 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

The embodiment may be implemented as a light emitting module by arranging a package in which a light emitting device is packaged on the substrate, or may be implemented as a light emitting module by arranging and packaging a light emitting device as shown in FIG.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: light emitting device 110,210,310,410: first conductive semiconductor layer
111,211,311,411: first semiconductor layer 113,213,313,413: second semiconductor layer
120,220,320,420: active layer 130,230,330,430: second conductive semiconductor layer
135,235,335,435: light emitting structure layer
150,250,350,355,450: first electrode layer 170,270,370,470: second electrode layer
171,271,371,471: Contact electrode 151,251,351,451: Pad
161,262,361,461: Insulation layer 190,290,390: Protective layer

Claims (18)

A first conductive semiconductor layer including a first semiconductor layer and a second semiconductor layer below the first semiconductor layer, and a second conductive semiconductor layer disposed below the first conductive semiconductor layer; And an active layer disposed between the first and second conductive semiconductor layers.
A plurality of first holes disposed between the lower surface of the light emitting structure layer and the first semiconductor layer;
A first electrode layer disposed under the light emitting structure layer;
A second electrode layer disposed under the first electrode layer;
An insulating layer disposed between the plurality of first holes and the first and second electrode layers; And
A contact electrode protruding from one of the first and second electrode layers and connected to the first semiconductor layer through the plurality of first holes,
The circumferential surface of the first hole includes a first inner surface disposed in the second semiconductor layer, and a second inner surface disposed in the active layer and the second conductive semiconductor layer.
The second inner side surface of the second conductive semiconductor layer is inclined at an obtuse angle with respect to the bottom surface of the light emitting structure layer,
And an upper portion of the first inner side surface of the first semiconductor layer includes an angle smaller than an inclined angle of the second inner side surface with respect to the bottom surface of the light emitting structure layer. The light emitting device of claim 1, wherein the inclined angle of the second inner surface comprises a range of 100 to 130 degrees. The light emitting device of claim 2, wherein an angle of an upper portion of the first inner side surface is 90 degrees or less. The light emitting device of claim 3, wherein the second inner surface of the active layer is inclined at the same angle as the second inner surface of the second conductive semiconductor layer. The light emitting device of claim 3, wherein a lower portion of the first inner surface adjacent to the active layer is inclined at the same angle as the second inner surface of the second conductive semiconductor layer. The light emitting device of claim 3, wherein a lower portion of the first inner surface adjacent to the active layer is formed at the same angle as an upper portion of the first inner surface. The light emitting device according to any one of claims 1 to 6, wherein the thickness of the second semiconductor layer includes a range of 0.5 µm-3 µm. The light emitting device according to any one of claims 1 to 6, wherein the second conductive semiconductor layer further includes an inner portion disposed on a second inner side surface of the active layer. The light emitting device of claim 8, wherein the active layer further comprises an inner portion disposed on a second inner side surface of the second semiconductor layer. The light emitting device of claim 8, wherein an inner portion of the second conductive semiconductor layer has a thickness in a range of 1/3 to 1/6 of the thickness of the second conductive semiconductor layer. The light emitting device according to any one of claims 11 to 6, wherein the lower surface of the first semiconductor layer corresponding to the first hole is rough. The light emitting device according to any one of claims 1 to 6, wherein the lower surface of the second semiconductor layer is Ga-face. The light emitting device according to any one of claims 1 to 6, wherein the contact electrode protrudes from the first electrode layer. The light emitting device according to any one of claims 1 to 6, wherein the contact electrode protrudes from the second electrode layer. The semiconductor device of claim 14, wherein the second electrode layer comprises: an ohmic layer having the contact electrode; A conductive support member disposed under the ohmic layer; Light emitting device comprising a bonding layer between the ohmic layer and the conductive support member. The semiconductor device of claim 14, wherein the first electrode layer comprises: an ohmic layer under the second conductive semiconductor layer; And a reflective layer under the ohmic layer; A diffusion layer disposed between the reflective layer and the insulating layer,
The first hole penetrates inside the ohmic layer, the reflective layer, and the diffusion layer. The method of claim 16, wherein the diffusion layer comprises a contact portion disposed outside the side of the light emitting structure layer,
Light emitting device comprising a pad disposed on the contact portion. The light emitting device according to any one of claims 1 to 6, further comprising a light extraction structure having an uneven pattern on an upper surface of the first semiconductor layer.

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