KR101865918B1 - Light emitting device, method for fabricating the same, and light emitting device package - Google Patents

Abstract

A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the light emitting structure; A current blocking layer corresponding to a thickness direction of the first electrode and the light emitting structure below the light emitting structure; A conductive layer under the light emitting structure; A reflective electrode layer under the conductive layer; And a support member below the reflective electrode layer, wherein the current blocking layer is in contact with a lower surface of the light emitting structure, and a first current blocking layer is formed between the light emitting structure and the conductive layer; And a second current blocking layer disposed between the first current blocking layer and the conductive layer and having a reflectance higher than that of the first current blocking layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device, a method of manufacturing a light emitting device, and a light emitting device package.

The embodiments relate to a light emitting device, a light emitting device manufacturing method, and a light emitting device package.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. The III-V group nitride semiconductors are usually made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y?

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and they have been applied as light sources for various products such as a key pad light emitting portion of a cellular phone, a display device, an electric sign board, and a lighting device.

Embodiments provide a light emitting device including a current blocking layer having a reflective property between a light emitting structure and a reflective electrode layer, and a light emitting device package including the same.

An embodiment provides a light emitting device including a current blocking layer having a first current blocking layer having a light transmitting property and a second current blocking layer having a reflecting property between the light emitting structure and the reflective electrode layer, and a light emitting device package having the same.

Embodiments provide a light emitting device and a light emitting device package including the same that can improve reflection efficiency by a current blocking layer under a light emitting structure.

A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the light emitting structure; A current blocking layer corresponding to a thickness direction of the first electrode and the light emitting structure below the light emitting structure; A conductive layer under the light emitting structure; A reflective electrode layer under the conductive layer; And a support member below the reflective electrode layer, wherein the current blocking layer is in contact with a lower surface of the light emitting structure, and a first current blocking layer is formed between the light emitting structure and the conductive layer; And a second current blocking layer disposed between the first current blocking layer and the conductive layer and having a reflectance higher than that of the first current blocking layer.

The light emitting device package according to the embodiment includes the light emitting device; A body having a cavity; A plurality of lead electrodes disposed in the cavity and connected to the light emitting devices; And a molding member in the cavity.

A method of manufacturing a light emitting device includes: forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; Forming a current blocking layer on the upper surface of the second conductive semiconductor layer, the current blocking layer including a first current blocking layer having a light transmitting property and a second current blocking layer having a reflectance of 80% or more on the first current blocking layer; Forming a conductive layer on the second conductive semiconductor layer and the current blocking layer; Forming a reflective electrode layer on the conductive layer; And forming a conductive supporting member on the reflective electrode layer.

The embodiment can improve the reflection efficiency by the current blocking layer under the light emitting structure.

Embodiments can improve the current diffusion efficiency by the current blocking layer having different ohmic contact resistances under the light emitting structure.

Embodiments can improve current injection efficiency and reflection efficiency in a light emitting device having a vertical electrode structure.

Embodiments can improve the reliability of the light emitting device, the light emitting device package having the same, the lighting device, and the display device.

1 is a side sectional view showing a light emitting device according to a first embodiment.
2 is a detailed view of the current blocking layer of the light emitting device of FIG.
FIGS. 3 to 13 are views showing a manufacturing process of the light emitting device of FIG.
14 is a side sectional view showing a light emitting device according to the second embodiment.
15 is a detailed view of the current blocking layer of the light emitting device of Fig.
16 is a side sectional view showing a light emitting device according to the third embodiment.
17 is a detailed view of the current blocking layer of the light emitting device of Fig.
18 is a side sectional view showing a light emitting device according to the fourth embodiment.
19 is a view showing a light emitting device package including the light emitting element of the embodiment.
20 is a view illustrating a display device having the light emitting device package of FIG. 19 according to the embodiment.
FIG. 21 is a view showing another example of a display device having the light emitting device package of FIG. 19 according to the embodiment.
FIG. 22 is a view illustrating a lighting device having the light emitting device package of FIG. 19 according to the embodiment.

Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on " and " under " include both being formed "directly" or "indirectly" Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

FIG. 1 is a side sectional view showing a light emitting device according to a first embodiment, and FIG. 2 is a detailed view of a current blocking layer of the light emitting device of FIG.

1, a light emitting device 100 includes a light emitting structure 135 having a plurality of compound semiconductor layers 110, 120 and 130, an electrode 115, a channel layer 142, a current blocking layer 145, a conductive layer 148 A reflective electrode layer 152, a barrier layer 154, a bonding layer 156,

The light emitting device 100 may be embodied as a light emitting diode (LED) including a compound semiconductor of a compound semiconductor, for example, a group III-V element. The LED may be a visible light emitting diode such as blue, green, An LED in a light beam band, or a UV LED in an ultraviolet band, but the present invention is not limited thereto.

The light emitting structure 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130.

The first conductive semiconductor layer 110 may be a compound semiconductor of a group III-V element doped with a first conductive type dopant, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. The first conductive semiconductor layer 110 may include a semiconductor layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The first conductivity type semiconductor layer 110 is an N-type semiconductor layer, and the first conductivity type dopant includes N-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. The upper surface of the first conductive semiconductor layer 110 may have a roughness or pattern such as the light extracting structure 112 for light extraction efficiency and may be formed by selectively forming a transparent electrode layer for current diffusion and light extraction. And the present invention is not limited thereto.

A portion 194 of the insulating layer 190 may be formed on the upper surface of the light emitting structure 135. The insulating layer 190 may have a refractive index lower than the refractive index of the compound semiconductor layer of the group III- For example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ ≪ / RTI >

The electrode 115 may be formed on the first conductive semiconductor layer 110. The electrode 115 may be a pad or an electrode pattern having a branched structure connected to the pad, but the present invention is not limited thereto. The surface of the electrode 115 may have roughness of a concavo-convex shape, but the present invention is not limited thereto. The lower surface of the electrode 115 may be formed in a concavo-convex shape by the light extracting structure 112, but the present invention is not limited thereto.

The electrode 115 may be in ohmic contact with the upper surface of the first conductive semiconductor layer 110 and may be formed of a metal such as Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Au may be mixed to form a single layer or a multilayer. The electrode 115 may be selected from the above materials in consideration of ohmic contact with the first conductivity type semiconductor layer 110, adhesion between the metal layers, reflection characteristics, and conductivity characteristics. The pad of the electrode 115 may be formed as a single pad or a plurality of pads, but the pad is not limited thereto.

The active layer 120 is formed below the first conductive semiconductor layer 110 and may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum-wire structure, or a quantum dot structure. It can be formed in any one of them. The active layer 120 may be formed using a compound semiconductor material of a group III-V element and may be formed by a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / a GaN barrier layer, a period of an InGaN well layer / InGaN well layer / InGaN barrier layer. The barrier layer may be formed of a material having a band gap wider than the band gap of the well layer.

The first conductive type and / or the second conductive type cladding layer may be formed on and / or below the active layer 120. The first and second conductive type cladding layers may be formed of AlGaN-based semiconductor . The bandgap of the conductive clad layer may be wider than the bandgap of the barrier layer of the active layer 120.

The second conductive semiconductor layer 130 is formed below the active layer 120. The second conductive semiconductor layer 130 may include a Group III-V element compound semiconductor such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. The second conductive semiconductor layer 130 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductive semiconductor layer 130 is a P-type semiconductor layer, and the second conductive dopant includes a P-type dopant such as Mg, Zn, or the like. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The outer side of the light emitting structure 135 may be inclined or vertically formed. The width of the upper surface of the light emitting structure 135 may be larger than the width of the lower surface of the light emitting structure 135, and the width of the light emitting structure 135 may be inclined.

The light emitting structure 135 may further include a third conductive type semiconductor layer under the second conductive type semiconductor layer 130. The third conductive type semiconductor layer may be formed on the second conductive type semiconductor layer 130, Polarity. Also, the first conductive semiconductor layer 110 may be a P-type semiconductor layer and the second conductive semiconductor layer 130 may be an N-type semiconductor layer. Accordingly, the light emitting structure 135 may include at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure. Hereinafter, for the sake of convenience of description, a description will be made of an example in which the second conductive type semiconductor layer is disposed on the lowermost layer of the light emitting structure 135.

Below the second conductive semiconductor layer 130, a channel layer 142, a current blocking layer 145, and a conductive layer 148 are formed.

The channel layer 142 is disposed under the second conductive semiconductor layer 130 and the current blocking layer 145 is disposed under the second conductive semiconductor layer 130.

The inner side of the channel layer 142 may be disposed under the light emitting structure 135 and may contact the lower surface of the second conductive type semiconductor layer 130. The outer side of the channel layer 142 may be disposed on the outer side of the light emitting structure 135 from the lower side of the light emitting structure 135. The outer side of the channel layer 142 may be disposed in a channel region that is further outward than a side surface of the second conductivity type semiconductor layer 130 to protect the side surface of the light emitting structure 135. The channel region may have a stepped structure between the light emitting structure 135 and the conductive member 160 and may be a peripheral region of the upper portion of the light emitting device.

The channel layer 142 may be formed of a light transmitting material, and the light transmitting material may be selected from a metal oxide or a metal nitride. The channel layer 142 may be formed of, for example, ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO ), IGTO (indium gallium tin oxide ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2, SiOx, SiOxNy, Si 3 N 4, Al 2 O 3, TiO 2 And the like. The refractive index of the channel layer 142 may be formed of a material having a lower refractive index than the refractive index of the compound semiconductor layer, for example, a transparent nitride, a transparent oxide, and a light-transmitting insulating layer.

The channel layer 142 may receive a part of the light emitted from the active layer 120 and emit the light through the surface. Accordingly, the light extraction efficiency can be improved.

The channel layer 142 may be formed of a metallic material, and the metallic material may be bonded to one of the conductive members 160.

The inner side of the channel layer 142 is in contact with the lower surface of the second conductivity type semiconductor layer 130 to a predetermined width D3. Here, D3 is within a range of several to several tens of micrometers, and may vary depending on the chip size.

The channel layer 142 may be formed in a loop shape, an annular shape, a frame shape, or the like around the lower surface of the second conductive type semiconductor layer 130. The channel layer 142 may include a continuous pattern or a discontinuous pattern, or may be formed on the path of the laser that is irradiated into the channel region during fabrication.

When the channel layer 142 is SiO ₂ , the refractive index is about 2.3, the ITO refractive index is about 2.1, and the GaN refractive index is about 2.4. Thus, the channel layer 142 ) Can be emitted to the outside.

An insulating layer 190 may be further formed on the upper surface of the channel layer 142. The insulating layer 190 may be adhered to the upper surface of the channel layer 142 to define a side surface of the light emitting structure 135 Protection. Also, the channel layer 142 can prevent short-circuiting between the outer walls of the light emitting structure 135 and the inner wall of the light emitting structure 135, thereby providing a high-intensity LED. In the case of a light-transmissive material, the channel layer 142 prevents the generation of a fragment of a metal material due to the laser in the channel region by transmitting the laser beam during the laser scribing, so that the interlayer short- .

The channel layer 142 may be spaced apart from an outer wall of each of the layers 110, 120 and 130 of the light emitting structure 135 and the barrier layer 154. The channel layer 142 may have a thickness of 0.02 to 5 탆, and the thickness of the channel layer 142 may vary depending on the chip size.

The current blocking layer 145 may be disposed between the reflective electrode layer 152 and the second conductive semiconductor layer 130 or between the conductive layer 148 and the second conductive semiconductor layer 130 . The current blocking layer 145 is formed of a non-metallic material having a lower electrical conductivity than the reflective electrode layer 152, and dissipates the supplied current to diffuse to another region.

The current blocking layer 145 is disposed corresponding to the electrode 115 in the thickness direction of the light emitting structure 135. The number and pattern of the current blocking layer 145 may be formed to correspond to the number and pattern of the electrodes 115.

1 and 2, the current blocking layer 145 may include a first current blocking layer 144 and a second current blocking layer 146. The first current blocking layer 144 may include a light- Oxide. The light-transmitting metal oxide may have ohmic contact with the lower surface of the second conductive semiconductor layer 130 and may have ohmic contact. For example, the first current blocking layer 144 and the conductive layer 148 may be formed of the same material or different materials. When the first current blocking layer 144 and the conductive layer 148 are made of different light transmitting materials, they may be formed of materials having different ohmic contact resistances. The first current blocking layer 144 may be formed of a material having a higher contact resistance than the contact resistance of the conductive layer 148 and may have a contact resistance lower than the contact resistance of the reflective electrode layer 152. have. The light transmittance of the first current blocking layer 144 may be 70% or more, but the present invention is not limited thereto.

The width D2 of the first current blocking layer 144 may be equal to or different from the width D1 of the electrode 115. [ The width D2 of the first current blocking layer 144 may be greater or smaller than the width of the electrode 115 and the width D2 of the first current blocking layer 144 may be greater than the width D2 of the first current blocking layer 144, The width difference can be less than 50%. If the difference between the width D2 of the first current blocking layer 144 and the width D1 of the electrode 115 is 50% or more, the current blocking layer 145 is formed too small, It may be difficult or too large, and current flow of the light emitting structure 135 may not be smooth. The width D2 of the current blocking layer 144 may be the width of the top surface of the current blocking layer 145.

The first current blocking layer 144 may include at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO).

The second current blocking layer 146 includes a structure in which at least two layers are alternately arranged. For example, the first layer 61 and the second layer 62 may be formed in three or more pairs. For example, the first layer 61 may be SiO ₂ and the second layer 62 may be a dielectric layer having a different refractive index such as TiO ₂ Or Al ₂ O ₃ . The refractive index of the SiO ₂ is about 1.46, the refractive index of Al ₂ O ₃ is about 1.78, and the refractive index of TiO ₂ is about 2.40. The refractive index difference between the first layer (61) and the second layer (62) may be 0.3 or more. Further, the thicknesses of the first layer 61 and the second layer 62 satisfy the condition of? / 4n,? Is the peak wavelength of the light emitted from the active layer 120, The refractive index of the first layer 61 and the refractive index of the second layer 62.

As another example, the second current blocking layer 146 includes a structure in which at least two layers are alternately arranged, and one of the first layer 61 and the second layer 62 is a metal layer, One layer may be a dielectric layer. The metal layer may include at least one of Ag, Ni, Pd, and Pt. The dielectric layer is SiO _2, TiO ₂ and Al ₂ O ₃ Or the like. The second current blocking layer 146 is a material having a reflective characteristic and has a reflectance of 80% or more.

Since most of the region of the first current blocking layer 144 is covered by the second current blocking layer 146, the current transmitted from the reflecting electrode layer 152 is blocked by the second current blocking layer 146 Therefore, it operates as a current blocking region. The first current blocking layer 144 has a lower electrical conductivity than that of the conductive layer 148 even if the first current blocking layer 144 is partially in contact with the conductive layer 148, .

The current blocking layer 145 is disposed in a region corresponding to the pattern of the electrode 115 so that the current is intercepted and is diffused to other regions so that the current blocking layer 145 is electrically connected to the electrode 115 through the light emitting structure 135. [ The path of the current to be transmitted can be changed. Further, the current blocking layer 145 may reflect light incident thereon by the reflection characteristic, thereby improving the reflection efficiency.

The current blocking layer 145 may be formed by forming the first current blocking layer 144 from a light transmitting material and the second current blocking layer 146 from a reflective material to form the active layer 120, The distance between light emitted from the active layer 120 is increased, and the probability that light is emitted in various directions is increased, so that light extraction efficiency can be improved.

The conductive layer 148 is in contact with the lower surface of the light emitting structure 135, for example, the lower surface of the second conductive type semiconductor layer 130. The conductive layer 148 may be disposed between the channel layer 142 and the current blocking layer 145 and may be in ohmic contact with the lower surface of the second conductive semiconductor layer 130. The conductive layer 148 may be further formed under the channel layer 142 and the current blocking layer 145, but the present invention is not limited thereto.

The conductive layer 148 may be formed to a thickness of 20 to 50 nm. The conductive layer 148 may include a conductive oxide or a conductive nitride. Examples of the conductive layer include ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride) , Indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO) zinc oxide). The conductive layer 148 may not be formed on the lower surface of the channel layer 142, but the present invention is not limited thereto.

A reflective electrode layer 152 may be formed under the conductive layer 148 and the reflective electrode layer 152 may be formed on the entire lower surface or the bottom surface of the conductive layer 148.

The reflective electrode layer 152 is electrically connected to the conductive layer 148 and supplies power. The width of the reflective electrode layer 152 may be greater than the width of the light emitting structure 135. In this case, the incident light may be effectively reflected. Accordingly, the light extraction efficiency can be improved.

The reflective electrode layer 152 is not exposed to the side surface of the light emitting device and may prevent damage to the channel region of the light emitting structure 135 due to the material of the reflective electrode layer 152.

The reflective electrode layer 152 may be formed as a single layer or multiple layers by selectively using a material selected from Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, . The reflective electrode layer 152 may be formed in multiple layers using materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like. The thickness of the reflective electrode layer 152 may be 150-300 nm, but the thickness is not limited thereto.

The barrier layer 154 may be formed under the reflective electrode layer 152 and may be in contact with the conductive layer 148 disposed under the channel layer 142. However, the barrier layer 154 is not limited thereto. The barrier layer 154 may include at least one of Ti, W, Pt, Pd, Rh, and Ir as a barrier metal. The barrier layer 154 may affect the reflective electrode layer 152 from the bonding layer 156. I will block the giving. The barrier layer 154 may have a thickness of 300 to 500 nm, but the barrier layer 154 is not limited thereto.

A bonding layer 156 is formed below the barrier layer 154 and the bonding layer 156 bonds the supporting member 170 to the barrier layer 154.

The bonding layer 156 may include at least one of a bonding metal, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, The bonding layer 156 functions as, for example, a bonding layer, and a supporting member 170 is bonded thereunder. The supporting member 170 may be plated or attached with a conductive sheet under the reflective electrode layer 152 without forming the bonding layer 156 and the barrier layer 154. [ The bonding layer 156 may have a thickness of 5 to 9 탆, but the bonding layer 156 is not limited thereto.

A supporting member 170 is formed under the bonding layer 156. The supporting member 170 is a conductive substrate made of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo) , Copper-tungsten (Cu-W), and the like. The support member 170 may be implemented as a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN or the like). Further, the support member 170 may not be formed, or may be formed of a conductive sheet. The support member 170 may have a thickness of 50 to 300 탆, but the present invention is not limited thereto.

Here, the conductive layer 148, the reflective electrode layer 152, the barrier layer 154, and the bonding layer 156 may be defined as a conductive member 160 or an electrode member.

FIGS. 3 to 13 are views showing a manufacturing process of the light emitting device of FIG.

Referring to FIGS. 3 and 4, the substrate 101 may be loaded into a growth apparatus, and a compound semiconductor of Group 2 to Group 6 elements may be formed thereon in the form of a layer or a pattern.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, and the like, and the present invention is not limited thereto.

The substrate 101 may be selected from a substrate made of an insulating material, a light-transmitting material, or a conductive material. For example, the substrate 101 may be a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , Substrate, GaAs, and the like. A concave-convex structure may be formed on the upper surface of the substrate 101. A layer or a pattern using a compound semiconductor of Group 2 to Group 6 elements is formed between the substrate 101 and the light emitting structure 135 by a method such as a ZnO layer (not shown), a buffer layer (not shown), an undoped semiconductor layer At least one layer may be formed. The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of a group III-V element, and the buffer layer may reduce a difference in lattice constant between the substrate and the compound semiconductor, And may be formed of a nitride-based semiconductor not doped. The undoped semiconductor layer has lower conductivity than the first conductivity type semiconductor layer 110 and can improve the crystallinity of the first conductivity type semiconductor layer 110.

A first conductive semiconductor layer 110 is formed on the substrate 101. An active layer 120 is formed on the first conductive semiconductor layer 110 and a second conductive semiconductor layer 110 is formed on the active layer 120. [ (130) is formed.

The first conductive semiconductor layer 110 may include a compound semiconductor of a Group III-V element doped with the first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, , AlGaInP, and the like. When the first conductive type is an N type semiconductor, the first conductive type dopant includes N type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The active layer 120 may be formed on the first conductive semiconductor layer 110 and the active layer 120 may have a single quantum well structure or a multiple quantum well structure. The active layer 120 may be formed using a Group III-V compound semiconductor material, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / a GaN barrier layer, a period of an InGaN well layer / The InGaN well layer / the InGaN barrier layer, and the like. However, the present invention is not limited thereto. The band gap of the barrier layer may be formed to be wider than the band gap of the well layer.

A first conductive type and / or a second conductive type cladding layer may be formed on and / or below the active layer 120, and the first and second conductive type cladding layers may be formed of a nitride based semiconductor . The first and second conductive cladding layers may be formed of a material having a band gap wider than a band gap of the barrier layer.

The second conductivity type semiconductor layer 130 is formed on the active layer 120 and the second conductivity type semiconductor layer 130 is formed of a Group III-V element compound semiconductor doped with a second conductivity type dopant, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductivity type is a P-type semiconductor, the second conductivity type dopant includes a P-type dopant such as Mg, Zn, or the like. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure 135. A third conductive semiconductor layer, for example, an N-type semiconductor layer having a polarity opposite to that of the second conductive type may be further formed on the second conductive semiconductor layer 130. Accordingly, the light emitting structure 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

Referring to FIGS. 3 and 4, a channel layer 142 is formed in a boundary region of the unit chip size T1. The channel layer 142 may have a pattern such as a ring shape, a loop shape, or a frame shape along the boundary region of the chip size T1 and may be formed in a continuous pattern shape or a discontinuous pattern shape. The channel layer 142 may be formed by protecting the mask layer with respect to the protection region, or may be formed after the channel layer 142 is formed, and then the region to be etched may be removed. The channel layer 142 may be formed by sputtering or vapor deposition, but the present invention is not limited thereto.

(ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium tin oxide (ITO), or the like. IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2, SiO x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, and the like.

In addition, a current blocking layer 145 contacting the upper surface of the second conductivity type semiconductor layer 130 is formed in an inner region of the channel layer 142. The current blocking layer 145 may be formed by protecting the masking layer with respect to the protection region or by selectively removing the current blocking layer 145. The current blocking layer 145 may be formed using a sputtering method, a deposition method, or a printing method. However, the present invention is not limited thereto.

The current blocking layer 145 includes a first current blocking layer 144 and a second current blocking layer 146. The first current blocking layer 144 may be formed on the upper surface of the light emitting structure 135, for example, on the upper surface of the second conductive semiconductor layer 130, and may be formed of a transparent metal oxide. The second current blocking layer 146 is formed on the first current blocking layer 144 and the first layer 61 and the second layer 62 are alternately stacked in three or more pairs as shown in FIG. Here, the first current blocking layer 144 may be an ohmic contact with the upper surface of the second conductive semiconductor layer 130 as a conductive material.

The second current blocking layer 146 may be formed of a pair of dielectric layers having different refractive indexes, or may be formed of a metal layer and a dielectric layer.

The first current blocking layer 144 may include at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO). The metal layer may include at least one of Ag, Ni, Pd, and Pt. The dielectric layer is SiO _2, TiO ₂ and Al ₂ O ₃ Or the like.

The region of the current blocking layer 145 is formed in a region corresponding to the electrode position in FIG. 1, for example, the number and pattern of the current blocking layer 145 correspond to the number and pattern of the electrodes.

5 and 6, a conductive layer 148 is formed on the upper surface of the light emitting structure 135, for example, on the upper surface of the second conductive semiconductor layer 130. The conductive layer 148 may be formed by sputtering or vapor deposition, and may be in ohmic contact with the upper surface of the second conductive semiconductor layer 130.

The conductive layer 148 may be formed on the second conductive semiconductor layer 130, the channel layer 142, and the current blocking layer 145. The conductive layer 148 may be formed on a part of the top surface of the channel layer 142 or may not be formed on the top surface, but the present invention is not limited thereto. The conductive layer 148 may include any one of a light-transmitting conductive oxide and a conductive nitride, but the present invention is not limited thereto.

Here, the conductive layer 148 and the first current blocking layer 144 may be formed of the same material or different materials. When the first current blocking layer 144 and the conductive layer 148 are made of different light transmitting materials, they may be formed of materials having different ohmic contact resistances. The first current blocking layer 144 is formed of a material having a higher contact resistance than the contact resistance of the conductive layer 148.

Referring to FIG. 7, a reflective electrode layer 152 is formed on the conductive layer 148 and a barrier layer 154 is formed on the reflective electrode layer 152. The reflective electrode layer 152 may be formed by an E-beam (electron beam) method, a sputtering method, or a plating method. The reflective electrode layer 152 is formed of a material having a reflection characteristic of 70% or more, for example, a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, And may be formed as a single layer or a multilayer. In addition, the reflective electrode layer 152 may be formed of a multilayer of a metal oxide and a conductive oxide material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. , IZO / Ag / Ni, AZO / Ag / Ni, or the like.

The reflective electrode layer 152 may be formed on the channel layer 142. Since the reflective electrode layer 152 is implemented using a reflective metal, it can serve as an electrode.

A barrier layer 154 is formed on the reflective electrode layer 152 and the barrier layer 154 may be formed by sputtering or evaporation. The barrier layer 154 may include at least one of Ti, W, Pt, Pd, Rh and Ir as a barrier metal. The barrier layer 154 may be in contact with the upper surface of the conductive layer 148, but the present invention is not limited thereto.

Referring to FIG. 8, a bonding layer 156 is formed on the barrier layer 154. The bonding layer 156 may be formed by sputtering or vapor deposition. The material may be at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, But it is not limited thereto.

The bonding layer 156 may be a bonding layer, and a supporting member 170 may be bonded thereon. The support member 170 may be a conductive support member such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten as Ge, GaAs, ZnO, SiC, SiGe, Ga 2 O 3, GaN , and so on) and so on can be implemented. The support member 170 may be bonded to the bonding layer 156, formed of a plated layer, or attached in the form of a conductive sheet. The bonding layer 156 and the barrier layer 154 may not be formed. In this case, the conductive supporting member 170 may be formed on the reflective electrode layer 152.

Referring to FIGS. 8 to 10, the support member 170 is positioned on the base, and the substrate 101 is positioned on the uppermost side. Then, the substrate 101 disposed on the light emitting structure 135 is removed.

The method of removing the substrate 101 may be removed by a laser lift off (LLO) process. The laser lift-off method is a method of irradiating the substrate 101 with a laser having a wavelength of a certain area to separate the substrate 101. Here, if there is another semiconductor layer (for example, a buffer layer) or an air gap between the substrate 101 and the first conductivity type semiconductor layer 110, the substrate may be separated using a wet etching solution. The method of removal is not limited.

Referring to FIG. 11, the channel region 105, which is the boundary region of the chip size T1, is removed by isolation etching. That is, a part of the channel layer 142 may be exposed by performing isolation etching for the chip and chip boundary regions, and the side surface of the light emitting structure 135 may be formed obliquely or vertically.

In the case where the channel layer 142 is a light-transmitting material, the laser irradiated in the isolation etching or the laser scribing process is transmitted, so that the metal material below it, for example, the barrier layer 154, the bonding layer 156, It is possible to inhibit the material of the protrusion 170 from protruding in the direction in which the laser is irradiated or from generating debris.

Here, the channel layer 142 prevents the generation of metal fragments by the laser in the channel region 105 by transmitting the laser light, and protects the outer wall of each layer of the light emitting structure 135.

The light extracting structure 112 may be formed of a roughness or irregular pattern so that the light extracting structure 112 may be formed by performing etching on the upper surface of the first conductive semiconductor layer 110, Can be improved.

Referring to FIG. 12, an electrode 115 is formed on the first conductive semiconductor layer 110. The electrode 115 may be formed by a deposition method, a sputtering method, or a plating method, but is not limited thereto. The number of the electrodes 115 may be one or more, and the position of the electrodes 115 may overlap the region of the current blocking layer 145 and the thickness of the light emitting structure 135. The electrode 115 may include a branched pattern and a pad of a predetermined shape. The electrode 115 may be formed before or after chip separation, but the present invention is not limited thereto.

Referring to FIG. 13, an insulating layer 190 is formed around the light emitting structure 135. The insulating layer 190 is formed around the chip and has a lower end formed on the channel layer 142 and a portion 194 extending to the upper surface of the first conductive semiconductor layer 110 have. The insulating layer 190 may be formed around the light emitting structure 135 to prevent a short circuit between the layers 110, 120, and 130 of the light emitting structure 135. In addition, the insulating layer 190 and the channel layer 142 may prevent moisture from penetrating into the chip.

The insulating layer 190 may be formed of an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ or the like which is lower than the refractive index of the compound semiconductor (for example, GaN: .

1, and can be manufactured as shown in FIG. 1 by separating the individual chip units based on the boundary region of the unit chip size T1. At this time, the chip-based separation method can selectively use a cutting process, a laser or a braking process.

FIG. 14 is a side sectional view showing the light emitting device according to the second embodiment, and FIG. 15 is a detailed view of the current blocking layer of the light emitting device shown in FIG. In describing the second embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

14 and 15, the current blocking layer 145A of the light emitting device may have a structure in which at least one side 144A of the first current blocking layer 144 is inclined. The width of the top surface of the first current blocking layer 144 may be wider than the width of the bottom surface 144A and the inclination angle 1 of the side surface 144A may be in a range of 10 ° < . The inclined structure of the side 144A of the first current blocking layer 144 may be generated by wet etching, but is not limited thereto.

The second current blocking layer 146 is stacked on the lower surface of the first current blocking layer 144 and the inclined side surface 144A in a pair structure of the first layer 61 and the second layer 62 . Here, the second current blocking layer 146 may be formed to surround the surface of the first current blocking layer 144, thereby changing the angle of reflection of the light incident on the first current blocking layer 144 The light extraction efficiency to the side surface of the light emitting structure 135 can be improved, and the light distribution can be widened. Also, since at least one side 144A of the first current blocking layer 144 is formed as a rough surface as a stepped structure, the light reflection efficiency can be improved.

A portion of the second current blocking layer 146 is in contact with the side surface of the first current blocking layer 144 and the lower surface of the second conductive semiconductor layer 130, Can be improved and the current can be diffused.

FIG. 16 is a side sectional view showing the light emitting device according to the third embodiment, and FIG. 17 is a detailed view of the current blocking layer of the light emitting device shown in FIG. In describing the third embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

16 and 17, the current blocking layer 145B of the light emitting device includes a first current blocking layer 144 having a hole 144B and a second current blocking layer 144B having a portion 146B of a second current And a barrier layer 146.

The hole 144B of the first current blocking layer 144 may be formed to correspond to the center of the electrode 115 and a portion 146B of the second current blocking layer 146 may be inserted. A portion 146B of the second current blocking layer 146 may be in contact with the lower surface of the second conductive semiconductor layer 130. [ A portion 146B of the second current blocking layer 146 is formed to protrude further than the lower surface of the first current blocking layer 144, thereby effectively reflecting the incident light.

The first layer 61 and the second layer 62 of the second current blocking layer 146 may be formed along the lower surface of the first current blocking layer 144 and the hole 144B thereof, Can increase the reflection efficiency.

18 is a side sectional view showing a light emitting device according to the fourth embodiment. In describing the fourth embodiment, the same portions as those of the first embodiment will be described with reference to the first embodiment.

18, the lower surface 144C of the first current blocking layer 144 may be formed as a rough surface in the current blocking layer 145C of the light emitting device, Can be disposed under the rough surface to effectively reflect the light incident through the first current blocking layer 144 and improve the adhesion to the first current blocking layer 144.

19 is a view illustrating a light emitting device package according to an embodiment.

19, the light emitting device package 30 according to the embodiment includes a body 31, a first lead electrode 32 and a second lead electrode 33 provided on the body 31, The light emitting device 100 according to the embodiment of the present invention is installed in the first lead electrode 31 and is electrically connected to the first lead electrode 32 and the second lead electrode 33. The molding member 37 surrounding the light emitting device 100 ).

The body 31 may include a silicon material, a synthetic resin material, or a metal material. A cavity having an inclined surface may be formed around the light emitting device 100.

The first lead electrode 32 and the second lead electrode layer 33 are electrically separated from each other to provide power to the light emitting device 100. The first lead electrode 32 and the second lead electrode 33 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and the heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be mounted on the body 31 or on the first lead electrode 32 or the second lead electrode 33.

The light emitting device 100 may be mounted on the first lead electrode 32 and connected to the second lead electrode 33 by a wire 36. Alternatively, the light emitting device 100 may be connected to the first lead electrode 32 by a flip chip method or a die bonding method Or may be electrically connected.

The molding member 37 may surround and protect the light emitting device 100. In addition, the molding member 37 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

The light emitting device of FIG. 1 or the light emitting device package of FIG. 19 according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arrayed. The light unit includes the display device shown in Figs. 20 and 21 and the lighting device shown in Fig. 22, and includes a lighting lamp, a traffic light, And the like.

20 is an exploded perspective view of a display device according to an embodiment.

20, a display device 1000 includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 1031 and the reflecting member 1022 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light emitting module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI &gt;

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 30 according to the embodiment described above and the light emitting device package 30 may be arranged on the substrate 1033 at a predetermined interval have. The substrate may be, but is not limited to, a printed circuit board. The substrate 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Accordingly, heat generated in the light emitting device package 30 can be emitted to the bottom cover 1011 via the heat radiation plate.

The plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 30 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 30 may directly or indirectly provide light to the light-incident portion on one side of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

21 is a view illustrating a display device having a light emitting device package according to an embodiment.

21, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device package 30 is arrayed, an optical member 1154, and a display panel 1155 .

The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

22 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 22, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 mounted on the substrate 1532. A plurality of the light emitting device packages 30 may be arrayed in a matrix or at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one LED (Light Emitting Diode) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue or white, or a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

A semiconductor light emitting device includes a first conductive semiconductor layer and a second conductive semiconductor layer disposed on the first conductive semiconductor layer, wherein the first conductive semiconductor layer is formed on the first conductive semiconductor layer. A second current blocking layer, and a conductive layer, wherein the first current blocking layer and the second current blocking layer are formed on the insulating layer.

Claims (17)

A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
A first electrode on the light emitting structure;
A current blocking layer corresponding to a thickness direction of the first electrode and the light emitting structure below the light emitting structure;
A conductive layer under the light emitting structure;
A reflective electrode layer under the conductive layer; And
And a supporting member below the reflective electrode layer,
Wherein the current blocking layer is in contact with a lower surface of the light emitting structure and has a reflectance higher than that of the first current blocking layer between the first current blocking layer and the conductive layer between the light emitting structure and the conductive layer And a second high current blocking layer,
Wherein the first current blocking layer comprises a light transmitting metal oxide layer,
Wherein the second current blocking layer comprises a first layer comprising a metal layer disposed alternately and a second layer comprising a dielectric layer, wherein a portion of the second current blocking layer is formed on a side surface of the first current blocking layer, And the bottom surface of the two-conductivity-type semiconductor layer. A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
A first electrode on the light emitting structure;
A current blocking layer corresponding to a thickness direction of the first electrode and the light emitting structure below the light emitting structure;
A conductive layer under the light emitting structure;
A reflective electrode layer under the conductive layer; And
And a supporting member below the reflective electrode layer,
Wherein the current blocking layer is in contact with a lower surface of the light emitting structure and includes a first current blocking layer between the light emitting structure and the conductive layer; And a second current blocking layer between the first current blocking layer and the conductive layer, the second current blocking layer having a higher reflectance than the first current blocking layer,
Wherein the first current blocking layer comprises a light transmitting metal oxide layer,
Wherein the second current blocking layer comprises a first layer comprising a metal layer disposed alternately and a second layer comprising a dielectric layer,
And a part of the second current blocking layer contacts the lower surface of the second conductive type semiconductor layer through the first current blocking layer. The light emitting device according to claim 1 or 2, wherein the first current blocking layer comprises the same material as the conductive layer. The light emitting device according to claim 1 or 2, wherein the conductive layer and the first current blocking layer are in ohmic contact with each other on the lower surface of the second conductivity type semiconductor layer with different contact resistances. The method according to claim 1,
And the second current blocking layer surrounds the surface of the first current blocking layer. The method of claim 4, wherein the second layer is formed of a dielectric layer,
And the second layer comprises TiO ₂ or Al ₂ O ₃ . delete delete 6. The method according to claim 1 or 5,
Wherein at least one side of the first current blocking layer comprises a rough surface. 3. The method of claim 2,
And a part of the second current blocking layer protrudes and is disposed higher than a bottom surface of the first current blocking layer. delete The light emitting device according to claim 1 or 2, wherein a width of the first current blocking layer is equal to or different from a width of the electrode. The light emitting device according to claim 1 or 2, wherein a width difference between the electrode and the first current blocking layer is 50% or less. The light emitting device according to claim 1 or 2, wherein the second current blocking layer has a reflectance of 80% or more. The light emitting device of claim 1, wherein a side surface of the first current blocking layer is formed as an inclined side surface. The light emitting device according to claim 1 or 2, wherein a lower surface of the first current blocking layer is formed as a rough surface. The light emitting device according to claim 6, further comprising: a channel layer including an inner portion contacting a periphery of the light emitting structure and an outer portion disposed further from a side of the light emitting structure than the inner portion; A barrier layer between the reflective electrode layer and the supporting member; And a bonding layer between the barrier layer and the supporting member.

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