KR101921150B1 - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

A light emitting device according to an embodiment includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type below the first active layer A first light emitting structure including a first light emitting structure; A first reflective electrode below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second reflective electrode below the second light emitting structure; A semiconductor contact electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, a light emitting device package,

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device is increased, a light emitting device is applied to various fields including a display device and a lighting device.

Embodiments provide a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells electrically connected in series and having reliability.

A light emitting device according to an embodiment includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type below the first active layer A first light emitting structure including a first light emitting structure; A first reflective electrode below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second reflective electrode below the second light emitting structure; A semiconductor contact electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; .

A light emitting device according to an embodiment includes a plurality of light emitting cells each including a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A semiconductor contact portion electrically connected to the first conductivity type semiconductor layer of the first light emitting cell and the second conductivity semiconductor layer of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; .

A light emitting device package according to an embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; Wherein the light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type below the first active layer, A first light emitting structure including a first light emitting structure; A first reflective electrode below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second reflective electrode below the second light emitting structure; A semiconductor contact electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; .

A light emitting device package according to an embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; Wherein the light emitting element includes a plurality of light emitting cells each including a reflective electrode, a second conductive type semiconductor layer on the reflective electrode, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer, ; A semiconductor contact portion electrically connected to the first conductivity type semiconductor layer of the first light emitting cell and the second conductivity semiconductor layer of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; .

A light unit according to an embodiment includes a substrate; A light emitting element disposed on the substrate; An optical member through which the light provided from the light emitting element passes; Wherein the light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type below the first active layer, A first light emitting structure including a first light emitting structure; A first reflective electrode below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second reflective electrode below the second light emitting structure; A semiconductor contact electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; .

A light unit according to an embodiment includes a substrate; A light emitting element disposed on the substrate; An optical member through which the light provided from the light emitting element passes; Wherein the light emitting element includes a plurality of light emitting cells each including a reflective electrode, a second conductive type semiconductor layer on the reflective electrode, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer, ; A semiconductor contact portion electrically connected to the first conductivity type semiconductor layer of the first light emitting cell and the second conductivity semiconductor layer of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; .

The light emitting device, the light emitting device package, and the light unit according to the embodiments can provide a plurality of light emitting cells that are reliable and electrically connected in series.

1 is a view illustrating a light emitting device according to an embodiment.
2 to 5 are views showing a method of manufacturing a light emitting device according to an embodiment.
6 to 8 are views showing a modification of the light emitting device according to the embodiment.
9 is a view illustrating a light emitting device package according to an embodiment.
10 is a view showing a display device according to the embodiment.
11 is a view showing another example of the display device according to the embodiment.
12 is a view showing a lighting device according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on " and " under " include both " directly " or " indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a method of manufacturing a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

1, a light emitting device according to an embodiment includes a first light emitting structure 10, a second light emitting structure 20, a first reflective electrode 17, a second reflective electrode 27, A portion 43, and an electrode 80, as shown in FIG. Although FIG. 1 shows a case where two light emitting structures are disposed, the light emitting device according to the embodiment may include three light emitting structures or may include four or more light emitting structures. The plurality of light emitting structures may be connected in an electrically serial structure. The plurality of light emitting structures may be disposed on the support substrate 70.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed under the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be disposed under the first active layer 12 As shown in FIG.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, the second semiconductor layer 13 of the second conductivity type, Type semiconductor layer to which a p-type dopant is added as the second conductive-type dopant. Also, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. The first semiconductor layer 11 of the first conductivity type has a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material. The first semiconductor layer 11 of the first conductivity type may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, , N-type dopants such as Sn, Se, and Te can be doped.

The first active layer 12 is formed by injecting electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and electrons (or holes) injected through the second semiconductor layer 13 of the second conductivity type Or electrons) meet each other and emit light according to a band gap difference of an energy band according to the material of the first active layer 12. [ The first active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, and a quantum well structure. However, the present invention is not limited thereto.

The first active layer 12 is formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . When the first active layer 12 is implemented as the multiple quantum well structure, the first active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the InGaN well layer / GaN barrier layer.

The second semiconductor layer 13 of the second conductivity type may be, for example, a p-type semiconductor layer. The second semiconductor layer 13 of the second conductivity type has a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? Semiconductor material. The second semiconductor layer 13 of the second conductivity type may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, , A p-type dopant such as Ca, Sr, or Ba can be doped.

Meanwhile, the first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. Further, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second semiconductor layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be uniform or non-uniform. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first semiconductor layer 11 of the first conductivity type and the first active layer 12. A second conductivity type AlGaN layer may be formed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed below the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type may be disposed under the second active layer 22 As shown in FIG. The second light emitting structure 20 may be formed similarly to the first light emitting structure 10 described above.

The first ohmic contact layer 15 and the first reflective electrode 17 may be disposed under the first light emitting structure 10. A first channel layer 16 may be disposed under the first light-emitting structure 10 and around the first ohmic contact layer 15.

The first channel layer 16 may be formed of an electrically insulating material, for example. The first channel layer 16 may be formed of, for example, an oxide or a nitride. For example, the first channel layer 16 may comprise at least one of the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. The first channel layer 16 may be referred to as a channel layer.

The first ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO , Pt, and Ag.

The first reflective electrode 17 may be formed of a metal having a high reflectivity. For example, the first reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The first reflective electrode 17 may be formed of one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc- Transparent conductive materials such as indium-gallium-zinc oxide (IGZO), indium-gallium-zinc oxide (IGTO), indium-gallium-tin- oxide (IGTO), aluminum- As shown in FIG. For example, in an embodiment, the first reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, and Ag-Cu alloy.

The first ohmic contact layer 15 may be formed in ohmic contact with the first light emitting structure 10. The first reflective electrode 17 may reflect light incident from the first light emitting structure 10 to increase the amount of light extracted to the outside.

The second ohmic contact layer 25 and the second reflective electrode 27 may be disposed under the second light emitting structure 20. A second channel layer 26 may be disposed beneath the second light emitting structure 20 and around the second ohmic contact layer 25.

The second channel layer 26 may be formed of, for example, an electrically insulating material. The second channel layer 26 may be formed of, for example, an oxide or a nitride. For example, the second channel layer 26 is Si0 _2, Si _x O _y, Si ₃ N _4, Si _x N _y, SiO _x N _y, Al ₂ O _3, at least one from the group consisting of TiO _2, etc. May be selected and formed. The second channel layer 26 may be referred to as a channel layer.

The second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The second ohmic contact layer 25 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO , Pt, and Ag.

The second reflective electrode 27 may be formed of a metal having a high reflectivity. For example, the second reflective electrode 27 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The third reflective electrode 37 may be formed of a metal or an alloy of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide) Transparent conductive materials such as indium-gallium-zinc oxide (IGZO), indium-gallium-zinc oxide (IGTO), indium-gallium-tin- oxide (IGTO), aluminum- As shown in FIG. For example, in the embodiment, the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, and Ag-Cu alloy.

The second ohmic contact layer 25 may be formed in ohmic contact with the second light emitting structure 20. The second reflective electrode 27 reflects light incident from the second light emitting structure 20 to increase the amount of light extracted to the outside.

The semiconductor contact part 43 may be disposed under the first light emitting structure 10 and the second light emitting structure 20. The semiconductor contact part 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The semiconductor contact part 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. A part of the semiconductor contact part 43 may be in contact with the first semiconductor layer 11 of the first conductivity type. The upper surface of the semiconductor contact part 43 may be in contact with the first semiconductor layer 11 of the first conductivity type. A part of the semiconductor contact part 43 may be in contact with the fourth semiconductor layer 23 of the second conductivity type. The semiconductor contact portion 43 may be in contact with the second ohmic contact layer 25. The semiconductor contact portion 43 may be in contact with the second reflective electrode 27.

The semiconductor contact portion 43 may be formed of a semiconductor material. The semiconductor contact portion 43 may be formed of the same material as the first semiconductor layer 11 of the first conductivity type, for example. The semiconductor contact part 43 may be formed of a semiconductor material forming the first light emitting structure 10 or the second light emitting structure 20.

A second insulating layer 41 may be disposed between the semiconductor contact part 43 and the first light emitting structure 10. The second insulating layer 43 may be disposed between the semiconductor contact part 43 and the first semiconductor layer 11 of the first conductivity type. The second insulating layer 43 may be disposed between the semiconductor contact part 43 and the first active layer 12. The second insulating layer 43 may be disposed between the semiconductor contact part 43 and the second semiconductor layer 13 of the second conductivity type.

The second insulating layer 41 may be formed of an oxide or a nitride. The second insulating layer 41 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . The second insulating layer 41 may be formed of an insulating material such as TiO ₂ or AlN.

A third insulating layer 45 may be disposed between the semiconductor contact part 43 and the second light emitting structure 20. The third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the third semiconductor layer 21 of the first conductivity type. The third insulating layer 45 may be disposed between the semiconductor contact part 43 and the second active layer 22. The third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the fourth semiconductor layer 23 of the second conductivity type.

The third insulating layer 45 may be formed of an oxide or a nitride. The third insulating layer 45 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . The third insulating layer 45 may be formed of an insulating material such as TiO ₂ or AlN.

A part of the semiconductor contact part 43 may be exposed between the first and second light emitting structures 10 and 20. [ The upper surface of the semiconductor contact part 43 may be exposed between the first semiconductor layer 11 of the first conductivity type and the third semiconductor layer 21 of the first conductivity type.

The semiconductor contact part 43 may be in contact with the inside of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the semiconductor contact part 43 may be in contact with the Ga face of the first semiconductor layer 11 of the first conductivity type. According to the embodiment, since the semiconductor contact portion 43 can be brought into contact with the Ga surface of the first semiconductor layer 11 of the first conductivity type, thermal stability can be secured do. According to the embodiment, since the semiconductor contact portion 43 can be brought into contact with the Ga surface of the first semiconductor layer 11 of the first conductivity type, the variation of the characteristic curve according to the operating voltage The reliability can be ensured and it can be usefully applied to high current applications.

A first insulating layer 40 may be disposed below the semiconductor contact portion 43 and the second reflective electrode 27. [ The first insulating layer 40 may be formed of an oxide or a nitride. The first insulating layer 40 may include, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . The first insulating layer 40 may be formed of an insulating material such as TiO ₂ or AlN.

A diffusion barrier layer 50 may be disposed under the first reflective electrode 17 and the first insulation layer 40. A bonding layer 60 and a supporting member 70 may be disposed under the diffusion barrier layer 50.

The diffusion barrier layer 50 is formed on the bonding layer 60 so that the material contained in the bonding layer 60 diffuses in the direction of the first reflective electrode 17 and the second reflective electrode 27 in the process of providing the bonding layer 60. [ It is possible to perform a function of preventing the occurrence of a problem. The diffusion barrier layer 50 can prevent a material such as tin contained in the bonding layer 60 from affecting the first reflective electrode 17 and the second reflective electrode 27 have. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, and Mo.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 supports the light emitting structures according to the embodiment and may be electrically connected to external electrodes to provide power to the first light emitting structure 10. [ The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). The support member 70 may be formed of an insulating material. The support member 70 may be formed of a material such as Al ₂ O ₃ , SiO _2, or the like.

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure (10) is formed by the electrode (80) and the first reflective electrode (17). So that the second light emitting structure 20 can be supplied with power. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is supplied through the electrode 80 and the first reflective electrode 17, light can be provided from the first and second light emitting structures 10 and 20.

In addition, the first light emitting structure 10 and the second light emitting structure 20 can be electrically connected by the semiconductor contact portion 43 according to the embodiment. According to the embodiment, since the first semiconductor layer 11 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type are electrically connected through the semiconductor contact portion 43, There is no need to form a metallic contact portion. In addition, at the time of isolation etching for separating the first and second light emitting structures 10 and 20 from each other, the depth to be etched can be reduced, and since it is not necessary to form a separate contact portion, . As a result, process stability can be ensured and the area of the light emitting structure can be utilized efficiently.

According to the embodiment, the electrode 80 may be formed in a multi-layered structure. The electrode 80 may be formed of an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extracting pattern may be provided on the first light emitting structure 10 and the second light emitting structure 20. A concave-convex pattern may be provided on the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

The light emitting device according to the embodiment includes a plurality of light emitting cells. Each of the light emitting cells may include a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. And a semiconductor contact portion electrically connected to the first conductivity type semiconductor layer of the first light emitting cell and the second conductivity type semiconductor layer of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells.

The semiconductor contact part may be in contact with the first conductive semiconductor layer of the first light emitting cell. The semiconductor contact part may include the same material as the first conductive semiconductor layer of the first light emitting cell. The semiconductor contact part may be in contact with the second conductivity type semiconductor layer of the second light emitting cell. The semiconductor contact part may be in contact with the reflective electrode of the second light emitting cell. A part of the semiconductor contact part may be exposed between the first conductivity type semiconductor layer of the first light emitting cell and the first conductivity type semiconductor layer of the second light emitting cell. When the first conductivity type semiconductor layer of the first light emitting cell includes a GaN layer, the semiconductor contact portion may be in contact with the Ga face of the first conductivity type semiconductor layer of the first light emitting cell.

In addition, an electrode electrically connected to the first conductivity type semiconductor layer of the second light emitting cell may be included.

A method of manufacturing a light emitting device according to an embodiment will now be described with reference to FIGS. 2 to 5. FIG.

2, the first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a are formed on the growth substrate 5, . The first conductive semiconductor layer 11a, the active layer 12a and the second conductive semiconductor layer 13a may be defined as a light emitting structure 10a.

The growth substrate 5 may be formed of at least one of, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. A buffer layer may be further formed between the first semiconductor layer 11 of the first conductivity type and the growth substrate 5.

For example, the first conductivity type semiconductor layer 11a may be formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13a may be formed of a second conductivity type dopant Type semiconductor layer to which a p-type dopant is added. Also, the first conductivity type semiconductor layer 11a may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may be formed of an n-type semiconductor layer.

The first conductivity type semiconductor layer 11a may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11a is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The first conductivity type semiconductor layer 11a may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN and the like. An n-type dopant such as Si, Ge, .

Electrons (or holes) injected through the first conductive type semiconductor layer 11a and holes (or electrons) injected through the second conductive type semiconductor layer 13a meet with each other in the active layer 12a, And is a layer that emits light by a band gap difference of an energy band according to a material of the active layer 12a. The active layer 12a may be formed of any one of a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure, but is not limited thereto.

The active layer 12a may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? When the active layer 12a is formed of the multiple quantum well structure, the active layer 12a may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the InGaN well layer / GaN barrier layer / RTI >

The second conductive semiconductor layer 13a may be formed of, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13a is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductivity type semiconductor layer 13a may be selected from InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN and the like, and a p-type dopant such as Mg, Zn, Ca, .

Meanwhile, the first conductive semiconductor layer 11a may include a p-type semiconductor layer, and the second conductive semiconductor layer 13a may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13a. Thus, the light emitting structure 10a may include a np, pn, npn, Or a structure thereof. The doping concentration of impurities in the first conductivity type semiconductor layer 11a and the second conductivity type semiconductor layer 13a may be uniform or non-uniform. That is, the structure of the light emitting structure 10a may be variously formed, but is not limited thereto.

A first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11a and the active layer 12a. In addition, a second conductivity type AlGaN layer may be formed between the second conductivity type semiconductor layer 13a and the active layer 12a.

Next, as shown in FIG. 3, a part of the region of the light emitting structure 10a may be etched and a second insulating layer 41 and a third insulating layer 45 may be formed. The second insulating layer 41 and the third insulating layer 45 may be formed of an oxide or a nitride. The second insulating layer 41 and the third insulating layer 45 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . The second insulating layer 41 and the third insulating layer 45 may be formed of an insulating material such as TiO ₂ or AlN.

And then the semiconductor contact part 43 may be formed between the second insulating layer 41 and the third insulating layer 45. For example, the semiconductor contact portion 43 may be regrown from the first conductive type semiconductor layer 11a. The semiconductor contact portion 43 may be formed of a semiconductor material. The semiconductor contact portion 43 may be formed of the same material as the first semiconductor layer 11 of the first conductivity type or the second semiconductor layer 13 of the second conductivity type, for example. The semiconductor contact part 43 may be formed of a semiconductor material forming the first light emitting structure 10 or the second light emitting structure 20. A part of the semiconductor contact part 43 may be formed to be in contact with the fourth semiconductor layer 23 of the second conductivity type. Meanwhile, as another embodiment, the semiconductor contact portion 43 may be regrown from the second conductivity type semiconductor layer 13a.

3, the first channel layer 16 and the second channel layer 26 are formed, and the first ohmic contact layer 15, the second ohmic contact layer 25, The first reflective electrode 17 and the second reflective electrode 27 can be formed.

The first ohmic contact layer 15 and the second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 and the second ohmic contact layer 25 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO) IZTO (Indium Zinc Tin Oxide), IZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) Nitride, ZnO, IrOx, RuOx, NiO, Pt, and Ag.

The first reflective electrode 17 and the second reflective electrode 27 may be formed of a metal having high reflectivity. For example, the first reflective electrode 17 and the second reflective electrode 27 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Metal or an alloy. The first reflective electrode 17 and the second reflective electrode 27 are formed of a metal or an alloy of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), Aluminum-Zinc-Oxide (AZO), ATO (Antimony- Tin-Oxide) or the like. For example, in the embodiment, the first reflective electrode 17 and the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy .

4, a first insulating layer 40 is formed on the semiconductor contact portion 43 and the second reflective electrode 27. [ The first insulating layer 40 may be formed of an oxide or a nitride. The first insulating layer 40 may include, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . The first insulating layer 40 may be formed of an insulating material such as TiO ₂ or AlN.

On the other hand, the forming process of each layer described above is one example, and the process sequence can be variously modified.

4, a diffusion barrier layer 50, a bonding layer 60, and a support member 70 are formed on the first reflective electrode 17 and the first insulation layer 40 .

The diffusion barrier layer 50 is formed on the bonding layer 60 so that the material contained in the bonding layer 60 diffuses in the direction of the first reflective electrode 17 and the second reflective electrode 27 in the process of providing the bonding layer 60. [ It is possible to perform a function of preventing the occurrence of a problem. The diffusion barrier layer 50 may prevent a material such as tin contained in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt.

The bonding layer 60 may include a barrier metal or a bonding metal and may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, . The support member 70 supports the light emitting device according to the embodiment and is electrically connected to the external electrode to supply power to the first reflective electrode 17. [

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). The support member 70 may be formed of an insulating material. The support member 70 may be formed of a material such as Al ₂ O ₃ , SiO _2, or the like.

Next, the growth substrate 5 is removed from the first conductive type semiconductor layer 11a. As one example, the growth substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a process of irradiating a laser beam to the lower surface of the growth substrate 5 to peel the growth substrate 5 and the first conductivity type semiconductor layer 11a from each other.

Then, as shown in FIG. 5, isolation etching is performed to separate the first light emitting structure 10 and the second light emitting structure 20. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. A part of the semiconductor contact part 43 can be exposed by the isolation etching. In addition, a light extracting pattern may be provided on the upper surface of the first light emitting structure 10 and the second light emitting structure 20. A concave-convex pattern may be provided on the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure (10) is formed by the electrode (80) and the first reflective electrode (17). So that the second light emitting structure 20 can be supplied with power. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is supplied through the electrode 80 and the first reflective electrode 17, light can be provided from the first and second light emitting structures 10 and 20.

In addition, the first light emitting structure 10 and the second light emitting structure 20 can be electrically connected by the semiconductor contact portion 43 according to the embodiment. According to the embodiment, since the first semiconductor layer 11 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type are electrically connected through the semiconductor contact portion 43, There is no need to form a metallic contact portion. In addition, at the time of isolation etching for separating the first and second light emitting structures 10 and 20 from each other, the depth to be etched can be reduced, and since it is not necessary to form a separate contact portion, . As a result, process stability can be ensured and the area of the light emitting structure can be utilized efficiently.

According to the embodiment, the electrode 80 may be formed in a multi-layered structure. The electrode 80 may be formed of an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

6 is a view showing another example of the light emitting device according to the embodiment. In the description of the light emitting device according to the embodiment shown in FIG. 6, the description of the parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device according to the embodiment may be implemented such that the semiconductor contact portion 43 is not exposed between the first light emitting structure 10 and the second light emitting structure 20 as shown in FIG. The third insulating layer 45 may be exposed between the first light emitting structure 10 and the second light emitting structure 20. According to the embodiment, the semiconductor contact part 43 can be safely insulated from the outside, and the semiconductor contact part 43 can be stably insulated from the third semiconductor layer 21 of the first conductivity type .

7 is a view showing still another example of the light emitting device according to the embodiment. In the following description of the light emitting device according to the embodiment shown in FIG. 7, a description of the parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device according to the embodiment may be formed so that the semiconductor contact portion 43 does not directly contact the fourth semiconductor layer 23 of the second conductivity type as shown in FIG. The semiconductor contact portion 43 may be in contact with the second ohmic contact layer 25. [ The semiconductor contact portion 43 may be in contact with the second reflective electrode 27. The semiconductor contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the second ohmic contact layer 25 or the second reflective electrode 27.

8 is a view showing another example of the light emitting device according to the embodiment. In the following description of the light emitting device according to the embodiment shown in FIG. 8, a description of portions overlapping with those described with reference to FIG. 1 will be omitted.

According to the light emitting device of the embodiment, the first ohmic reflective electrode 19 may be disposed under the first light emitting structure 10. The first ohmic reflective electrode 19 may be implemented to perform both the functions of the first reflective electrode 17 and the first ohmic contact layer 15 described in FIG. Accordingly, the first ohmic reflective electrode 19 is in ohmic contact with the second semiconductor layer 13 of the second conductivity type and can reflect light incident from the first light emitting structure 10 have.

Also, a second ohmic reflective electrode 29 may be disposed under the second light emitting structure 20. The second ohmic reflective electrode 29 may be implemented to perform both the functions of the second reflective electrode 27 and the second ohmic contact layer 25 described in FIG. Accordingly, the second ohmic reflective electrode 29 is in ohmic contact with the fourth semiconductor layer 23 of the second conductivity type, and can reflect light incident from the second light emitting structure 20 have.

9 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

9, a light emitting device package according to an embodiment includes a body 120, first and second lead electrodes 131 and 132 disposed on the body 120, And a molding member 140 surrounding the light emitting device 100. The first and second lead electrodes 131 and 132 are electrically connected to the first and second lead electrodes 131 and 132, .

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other to provide power to the light emitting device 100. The first lead electrode 131 and the second lead electrode 132 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and the heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 120 or may be disposed on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by a wire, flip chip or die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting elements are arrayed, and may include the display apparatus shown in Figs. 10 and 11, and the illumination apparatus shown in Fig.

10, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arrayed on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 200 may be mounted such that the light emitting surface of the light emitting device package 200 is spaced apart from the light guiding plate 1041 by a predetermined distance, but the present invention is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

11 is a view showing another example of the display device according to the embodiment.

11, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

12 is a perspective view of a lighting apparatus according to an embodiment.

12, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 may be formed of a material having a good heat dissipation property, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment provided on the substrate 1532. A plurality of the light emitting device packages 200 may be arrayed in a matrix or spaced apart at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain colors and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source through a socket, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

Embodiments may be implemented as a light emitting module mounted on the substrate after packaging the light emitting device, or as a light emitting module mounted on the LED chip.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: first light emitting structure 11: first semiconductor layer
12: first active layer 13: second semiconductor layer
15: first ohmic contact layer 16: first channel layer
17: first reflective electrode 20: second light emitting structure
21: third semiconductor layer 22: second active layer
23: fourth semiconductor layer 25: second ohmic contact layer
26: second channel layer 27: second reflective electrode
40: first insulation layer 41: second insulation layer
43: semiconductor contact part 45: third insulating layer
50: diffusion barrier layer 60: bonding layer
70: support member 80: electrode

Claims (17)

A support member;
A second semiconductor layer of a second conductivity type disposed on the support member, a first active layer on the second semiconductor layer of the second conductivity type, and a first semiconductor layer of a first conductivity type on the first active layer A first light emitting structure;
A fourth semiconductor layer of a second conductivity type disposed on the support member and spaced apart from the first light emitting structure, a second active layer on the fourth semiconductor layer of the second conductivity type, a second active layer on the second active layer, A second light emitting structure including a third semiconductor layer of one conductivity type;
An electrode disposed on the second light emitting structure;
A first insulating layer disposed between the second light emitting structure and the supporting member to electrically insulate the supporting member from the second light emitting structure;
A semiconductor contact disposed between the first light emitting structure and the second light emitting structure;
A second insulating layer which is disposed between the semiconductor contact part and the first light emitting structure and electrically insulates the first active layer and the second semiconductor layer of the second conductivity type from the semiconductor contact part;
And a third insulating layer which is disposed between the semiconductor contact part and the second light emitting structure and electrically insulates the second active layer and the third semiconductor layer of the first conductivity type from the semiconductor contact part,
Wherein the semiconductor contact portion is in contact with the first semiconductor layer of the first conductivity type and in contact with the fourth semiconductor layer of the second conductivity type. The method according to claim 1,
A part of the second insulating layer is disposed on a side surface of the first active layer and the second semiconductor layer of the second conductivity type and a lower surface of the second semiconductor layer of the second conductivity type,
And a part of the third insulating layer is disposed on the side surfaces of the second active layer and the fourth semiconductor layer of the second conductivity type and on the lower surface of the fourth semiconductor layer of the second conductivity type. 3. The method of claim 2,
Wherein the semiconductor contact includes a material such as the first semiconductor layer of the first conductivity type. The method of claim 3,
Wherein the semiconductor contact portion is disposed between the first insulating layer and the second light emitting structure. 5. The method of claim 4,
And a portion of the semiconductor contact portion is exposed between the first light emitting structure and the second light emitting structure. 6. The method of claim 5,
A first reflective electrode disposed between the first light emitting structure and the support member; and a second reflective electrode disposed between the second light emitting structure and the support member. The method according to claim 6,
And a concavity and convexity provided on a first semiconductor layer of the first conductivity type and a third semiconductor layer of the first conductivity type. 8. The method of claim 7,
Wherein when the first semiconductor layer of the first conductivity type includes a GaN layer, the semiconductor contact portion is in contact with the Ga surface of the first semiconductor layer. delete delete delete delete delete delete delete delete delete

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