KR101956016B1 - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

A light emitting device according to an embodiment includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer, and a first light emitting layer including a second semiconductor layer of a second conductivity type below the first active layer structure; A first metal layer below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second metal layer below the second light emitting structure; A contact electrically connected to the first semiconductor layer and electrically connected to the second metal layer; An insulating layer electrically isolating the first metal layer and the second metal layer from each other and a portion of the insulating layer being disposed inside the first semiconductor layer of the first light emitting structure; .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, a light emitting device package,

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device is increased, a light emitting device is applied to various fields including a display device and a lighting device.

Embodiments provide a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells electrically connected in series, the process stability of which is improved.

Embodiments provide a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells with improved reliability.

A light emitting device according to an embodiment includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer, and a first light emitting layer including a second semiconductor layer of a second conductivity type below the first active layer structure; A first metal layer below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second metal layer below the second light emitting structure; A contact electrically connected to the first semiconductor layer and electrically connected to the second metal layer; An insulating layer electrically isolating the first metal layer and the second metal layer from each other and a portion of the insulating layer being disposed inside the first semiconductor layer of the first light emitting structure; .

A light emitting device according to an embodiment includes a plurality of light emitting cells each including a metal layer, a second conductive type semiconductor layer on the metal layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer; A contact portion that is in contact with a side surface of the first conductivity type semiconductor layer of the first light emitting cell among the plurality of light emitting cells and is electrically connected to the metal layer of the second light emitting cell adjacent to the first light emitting cell; An insulating layer electrically isolating a metal layer of the first light emitting cell from a metal layer of the second light emitting cell and a portion of the insulating layer disposed in the first conductive semiconductor layer of the first light emitting cell; .

A light emitting device package according to an embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; Wherein the light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer, and a second semiconductor layer of a second conductivity type below the first active layer, A light emitting structure; A first metal layer below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second metal layer below the second light emitting structure; A contact electrically connected to the first semiconductor layer and electrically connected to the second metal layer; An insulating layer electrically isolating the first metal layer and the second metal layer from each other and a portion of the insulating layer being disposed inside the first semiconductor layer of the first light emitting structure; .

A light emitting device package according to an embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; A plurality of light emitting cells each including a metal layer, a second conductivity type semiconductor layer on the metal layer, an active layer on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer on the active layer; A contact portion that is in contact with a side surface of the first conductivity type semiconductor layer of the first light emitting cell among the plurality of light emitting cells and is electrically connected to the metal layer of the second light emitting cell adjacent to the first light emitting cell; An insulating layer electrically isolating a metal layer of the first light emitting cell from a metal layer of the second light emitting cell and a portion of the insulating layer disposed in the first conductive semiconductor layer of the first light emitting cell; .

A light unit according to an embodiment includes a substrate; A light emitting element disposed on the substrate; An optical member through which the light provided from the light emitting element passes; Wherein the light emitting element includes a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer, and a first semiconductor layer of a second conductivity type below the first active layer, A light emitting structure; A first metal layer below the first light emitting structure; A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer, and a fourth semiconductor layer of a second conductivity type below the second active layer; A second metal layer below the second light emitting structure; A contact electrically connected to the first semiconductor layer and electrically connected to the second metal layer; An insulating layer electrically isolating the first metal layer and the second metal layer from each other and a portion of the insulating layer being disposed inside the first semiconductor layer of the first light emitting structure; .

A light unit according to an embodiment includes a substrate; A light emitting element disposed on the substrate; An optical member through which the light provided from the light emitting element passes; A plurality of light emitting cells each including a metal layer, a second conductive type semiconductor layer on the metal layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer, respectively; A contact portion that is in contact with a side surface of the first conductivity type semiconductor layer of the first light emitting cell among the plurality of light emitting cells and is electrically connected to the metal layer of the second light emitting cell adjacent to the first light emitting cell; An insulating layer electrically isolating a metal layer of the first light emitting cell from a metal layer of the second light emitting cell and a portion of the insulating layer disposed in the first conductive semiconductor layer of the first light emitting cell; .

The light emitting device, the light emitting device package, and the light unit according to the embodiments can improve the process stability and provide a plurality of light emitting cells electrically connected in series.

The light emitting device, the light emitting device package, and the light unit according to the embodiments can provide a plurality of light emitting cells with improved reliability.

1 is a view illustrating a light emitting device according to an embodiment.
2 to 7 are views showing a method of manufacturing a light emitting device according to an embodiment.
8 to 10 are views showing a modification of the light emitting device according to the embodiment.
11 is a view illustrating a light emitting device package according to an embodiment.
12 is a view showing a display device according to an embodiment.
13 is a view showing another example of the display device according to the embodiment.
14 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a method of manufacturing a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

1, a light emitting device according to an embodiment includes a first light emitting structure 10, a second light emitting structure 20, a third light emitting structure 30, a first reflective electrode 17, a second light emitting structure 20, A reflective electrode 27, a third reflective electrode 37, and an electrode 80. Although FIG. 1 shows a case where three light emitting structures are arranged, the light emitting device according to the embodiment may include two light emitting structures or may include four or more light emitting structures.

The plurality of light emitting structures may be electrically connected. For example, the plurality of light emitting structures may be electrically connected in series. The first light emitting structure 10 and the second light emitting structure 20 may be electrically connected by the first contact portion 43. The second light emitting structure 20 and the third light emitting structure 30 may be electrically connected by the second contact portion 53. The plurality of light emitting structures may be disposed on the support substrate 70.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed under the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be disposed under the first active layer 12 As shown in FIG.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, the second semiconductor layer 13 of the second conductivity type, Type semiconductor layer to which a p-type dopant is added as the second conductive-type dopant. Also, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. The first semiconductor layer 11 of the first conductivity type may be formed of a compound semiconductor. The first semiconductor layer 11 of the first conductivity type may be formed of a Group II-VI compound semiconductor or a Group III-V compound semiconductor. For example, the first semiconductor layer 11 of the first conductivity type has a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material. The first semiconductor layer 11 of the first conductivity type may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, , N-type dopants such as Sn, Se, and Te can be doped.

The first active layer 12 is formed by injecting electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and electrons (or holes) injected through the second semiconductor layer 13 of the second conductivity type Or electrons) meet each other and emit light according to a band gap difference of an energy band according to the material of the first active layer 12. [ The first active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The first active layer 12 may be formed of a compound semiconductor. The first active layer 12 is formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . When the first active layer 12 is implemented as the multi-well structure, the first active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the InGaN well layer / Lt; RTI ID = 0.0 > GaN < / RTI > barrier layer.

The second semiconductor layer 13 of the second conductivity type may be, for example, a p-type semiconductor layer. The second semiconductor layer 13 of the second conductivity type may be formed of a compound semiconductor. The second semiconductor layer 13 of the second conductivity type may be formed of a Group II-VI compound semiconductor or a Group III-V compound semiconductor. For example, the second semiconductor layer 13 of the second conductivity type has a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material. The second semiconductor layer 13 of the second conductivity type may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, , A p-type dopant such as Ca, Sr, or Ba can be doped.

Meanwhile, the first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. Further, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second semiconductor layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be uniform or non-uniform. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first semiconductor layer 11 of the first conductivity type and the first active layer 12. A second conductivity type AlGaN layer may be formed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed below the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type may be disposed under the second active layer 22 As shown in FIG. The second light emitting structure 20 may be formed similarly to the first light emitting structure 10 described above.

The third light emitting structure 30 may include a fifth semiconductor layer 31 of a first conductivity type, a third active layer 32, and a sixth semiconductor layer 33 of a second conductivity type. The third active layer 32 may be disposed between the fifth semiconductor layer 31 of the first conductivity type and the sixth semiconductor layer 33 of the second conductivity type. The third active layer 32 may be disposed under the fifth semiconductor layer 31 of the first conductivity type and the sixth semiconductor layer 33 of the second conductivity type may be disposed under the third active layer 32 As shown in FIG. The third light emitting structure 30 may be formed similarly to the first light emitting structure 10 described above.

The first ohmic contact layer 15 and the first reflective electrode 17 may be disposed under the first light emitting structure 10. A first metal layer 19 may be disposed under the first light emitting structure 10 and around the first reflective electrode 17. The first metal layer 19 may be disposed around the first ohmic contact layer 15 and under the first reflective electrode 17.

The first ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO , Pt, and Ag.

The first reflective electrode 17 may be formed of a metal having a high reflectivity. For example, the first reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The first reflective electrode 17 may be formed of one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc- Transparent conductive materials such as indium-gallium-zinc oxide (IGZO), indium-gallium-zinc oxide (IGTO), indium-gallium-tin- oxide (IGTO), aluminum- As shown in FIG. For example, in an embodiment, the first reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, and Ag-Cu alloy.

The first ohmic contact layer 15 may be formed in ohmic contact with the first light emitting structure 10. The first reflective electrode 17 may reflect light incident from the first light emitting structure 10 to increase the amount of light extracted to the outside.

The first metal layer 19 may function to prevent a material contained in the bonding layer 60 from diffusing toward the first reflective electrode 17 in the process of providing the bonding layer 60 . The first metal layer 19 may prevent a substance such as tin contained in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The first metal layer 19 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, Mo, Ti and Cr. The first metal layer 19 may be a transparent conductive oxide layer. The first metal layer 19 may be referred to as a channel layer or a channel layer.

The second ohmic contact layer 25 and the second reflective electrode 27 may be disposed under the second light emitting structure 20. A second metal layer 29 may be disposed under the second light emitting structure 20 and around the second reflective electrode 27. The second metal layer 29 may be disposed around the second ohmic contact layer 25 and under the second reflective electrode 27.

The second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The second ohmic contact layer 25 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO , Pt, and Ag.

The second reflective electrode 27 may be formed of a metal having a high reflectivity. For example, the second reflective electrode 27 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The second reflective electrode 27 may be formed of a metal or an alloy of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide) Transparent conductive materials such as indium-gallium-zinc oxide (IGZO), indium-gallium-zinc oxide (IGTO), indium-gallium-tin- oxide (IGTO), aluminum- As shown in FIG. For example, in the embodiment, the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, and Ag-Cu alloy.

The second ohmic contact layer 25 may be formed in ohmic contact with the second light emitting structure 20. The second reflective electrode 27 reflects light incident from the second light emitting structure 20 to increase the amount of light extracted to the outside.

The second metal layer 29 may prevent diffusion of a material contained in the bonding layer 60 toward the second reflective electrode 27 in the process of providing the bonding layer 60 have. The second metal layer 29 can prevent a material such as tin contained in the bonding layer 60 from affecting the second reflective electrode 27 or the like. The second metal layer 29 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, Mo, Ti, Cr. ≪ / RTI > The second metal layer 29 may be a transparent conductive oxide layer.

The third ohmic contact layer 35 and the third reflective electrode 37 may be disposed under the third light emitting structure 30. A third metal layer 39 may be disposed under the third light emitting structure 30 and around the third reflective electrode 37. The third metal layer 39 may be disposed around the third ohmic contact layer 35 and under the third reflective electrode 37.

The third ohmic contact layer 35 may be formed of, for example, a transparent conductive oxide layer. The third ohmic contact layer 35 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO , Pt, and Ag.

The third reflective electrode 37 may be formed of a metal having a high reflectivity. For example, the third reflective electrode 37 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The third reflective electrode 37 may be formed of a metal or an alloy of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide) Transparent conductive materials such as indium-gallium-zinc oxide (IGZO), indium-gallium-zinc oxide (IGTO), indium-gallium-tin- oxide (IGTO), aluminum- As shown in FIG. For example, in the embodiment, the third reflective electrode 37 may include at least one of Ag, Al, Ag-Pd-Cu alloy, and Ag-Cu alloy.

The third ohmic contact layer 35 may be formed in ohmic contact with the third light emitting structure 30. The third reflective electrode 37 may reflect light incident from the third light emitting structure 30 to increase the amount of light extracted to the outside.

The third metal layer 39 may prevent a material contained in the bonding layer 60 from diffusing toward the third reflective electrode 37 in the process of providing the bonding layer 60 have. The third metal layer 39 may prevent a substance such as tin contained in the bonding layer 60 from affecting the third reflective electrode 37 or the like. The third metal layer 39 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, Mo, Ti and Cr.

A first contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The first contact portion 43 may be electrically connected to the first semiconductor layer 11. The first contact portion 43 may be electrically connected to the second metal layer 29. The first contact part 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the side surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be in contact with the upper surface of the second metal layer 29. The second metal layer 29 is electrically connected to the second reflective electrode 27 and the second ohmic contact layer 25 so that the first contact portion 43 is electrically connected to the fourth semiconductor Layer 23 as shown in FIG. Accordingly, the first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. The first contact portion 43 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The first contact portion 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face of the first semiconductor layer 11 of the first conductivity type.

A first insulating layer 41 may be disposed between the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type. The first insulating layer 41 may be disposed between the first contact part 43 and the first active layer 12. [ The first insulating layer 41 may be disposed under the first semiconductor layer 11 of the first conductivity type. The first insulating layer 41 may electrically isolate the first contact part 43 from the first active layer 12. [ The first insulating layer 31 may electrically isolate the first contact part 43 from the second semiconductor layer 13. [

Also, as shown in FIG. 7, the first region 13b of the second semiconductor layer of the second conductivity type may be isolated from the plane by the first insulating layer 41. FIG. The first region 13b disposed on one side of the first insulating layer 41 by the first insulating layer 41 and the second region 13b disposed on the other side of the first insulating layer 41, Type second semiconductor layer 13 can be electrically insulated. For example, the first contact portion 43 may be in contact with the first region 13b, and the first contact portion 43 may be electrically isolated from the second semiconductor layer 13 of the second conductivity type, .

The structure for electrically insulating the first region 13b in contact with the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type may be variously modified. For example, the first insulating layer 41 may be formed as a closed loop that surrounds a central region in the first light emitting structure 10. [ Herein, the center region of the first light emitting structure 10 is a region in which the first conductive type first semiconductor layer 11, the first active layer 12, and the second conductive type second semiconductor layer 13 emit light And may be a generated region. Accordingly, the central region and the peripheral region in the first light emitting structure 10 can be electrically isolated through the first insulating layer 41. As a result, the first region 13b in contact with the first contact portion 43 can be electrically insulated from the first active layer 12 and the second conductive type second semiconductor layer 13 contributing to light emission have.

The first insulating layer 41 may be disposed inside the first semiconductor layer 11 of the first light emitting structure 10. The first contact portion 43 and the first insulating layer 41 may be spaced apart from each other. A part of the semiconductor layer constituting the first light emitting structure 10 may be disposed between the first contact part 43 and the first insulating layer 41. The first insulating layer 41 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like. The first insulating layer 41 may be connected to the third insulating layer 40. That is, the first insulating layer 41 extends from the third insulating layer 40 and penetrates the first metal layer 19, the second semiconductor layer 13, the first active layer 12, May be formed in contact with a part of the interior of the first semiconductor layer (11).

The third insulating layer 40 may electrically insulate the first metal layer 19 from the second metal layer 29.

The second contact portion 53 may be disposed between the second light emitting structure 20 and the third light emitting structure 30. [ The second contact portion 53 may be electrically connected to the third semiconductor layer 21. The second contact portion 53 may be electrically connected to the third metal layer 39. The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the side surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be in contact with the upper surface of the third metal layer 39. The third metal layer 39 is electrically connected to the third reflective electrode 37 and the third ohmic contact layer 35 so that the second contact portion 53 is electrically connected to the sixth semiconductor Layer 33 as shown in FIG. Accordingly, the third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the second contact portion 53 may be in contact with the N face of the third semiconductor layer 21 of the first conductivity type.

A second insulating layer 51 may be disposed between the second contact portion 53 and the fourth semiconductor layer 23 of the second conductivity type. The second insulating layer 51 may be disposed between the second contact portion 53 and the second active layer 22. The second insulating layer 51 may be disposed under the third semiconductor layer 21 of the first conductivity type. The second insulating layer 45 may electrically isolate the second contact portion 53 from the second active layer 22. [ The second insulating layer 51 may electrically isolate the second contact portion 53 from the fourth semiconductor layer 23.

The second insulating layer 51 may be disposed inside the third semiconductor layer 21 of the second light emitting structure 20. The second contact portion 53 and the second insulating layer 51 may be spaced apart from each other. A part of the semiconductor layer constituting the second light emitting structure 20 may be disposed between the second contact part 53 and the second insulating layer 51. The second insulating layer 51 may be formed of a transparent or insulating material. The second insulating layer 51 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like. The second insulating layer 51 may be connected to the third insulating layer 40. The third insulating layer 40 may electrically isolate the second metal layer 29 from the third metal layer 39.

Referring to FIG. 7, the second insulating layer 51 may be formed similarly to the description of the function and the arrangement of the first insulating layer 41. FIG. That is, the first region of the fourth semiconductor layer 23 of the second conductivity type may be isolated from the plane by the second insulating layer 51.

The first region of the fourth semiconductor layer 23 disposed on one side of the second insulating layer 51 is electrically connected to the first region of the fourth semiconductor layer 23 on the other side of the second insulating layer 51 by the second insulating layer 51, The second region of the disposed fourth semiconductor layer 23 of the second conductivity type can be electrically insulated. For example, the second contact portion 53 may be in contact with the first region, and the second contact portion 53 may be electrically isolated from the fourth semiconductor layer 23 of the second conductivity type do.

The structure for electrically insulating the first region of the fourth semiconductor layer 23 and the second region of the fourth semiconductor layer 23 in contact with the second contact portion 53 may be variously modified have. For example, the second insulating layer 51 may be formed in a closed loop shape surrounding the central region in the second light emitting structure 20. [

Herein, the center region of the second light emitting structure 20 means that the first conductive type third semiconductor layer 21, the second active layer 22, and the second conductive type fourth semiconductor layer 23 emit light And may be a generated region. Accordingly, the central region and the peripheral region in the second light emitting structure 20 can be electrically isolated through the second insulating layer 51. As a result, the first region in contact with the second contact portion 53 can be electrically insulated from the second active layer 22 and the second conductive type fourth semiconductor layer 23 contributing to light emission.

The third insulating layer 40 may be disposed below the second metal layer 29 and the third metal layer 39. The third insulating layer 40 may be formed of an oxide or a nitride. The third insulating layer 40 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . Also, the third insulating layer 40 may be disposed in contact with the first insulating layer 41. In addition, the third insulating layer 40 may be disposed in contact with the second insulating layer 51. A first region of the third insulating layer 40, that is, a region extending to the first insulating layer 41, may be disposed between the first metal layer 19 and the second metal layer 29. A second region of the third insulating layer 40, that is, a region extending to the second insulating layer 51, may be disposed between the second metal layer 29 and the third metal layer 39.

A diffusion barrier layer 50, a bonding layer 60, and a supporting member 70 may be disposed under the first metal layer 19 and the third insulating layer 40.

The diffusion barrier layer 50 may be formed on the bonding layer 60 in the process of providing the bonding layer 60 to the first reflective electrode 17, 3 reflection electrode 37 in the direction of the light-shielding layer. The diffusion barrier layer 50 may be formed of a material such as tin contained in the bonding layer 60 such that the thickness of the first reflective electrode 17, the second reflective electrode 27, And the like can be prevented. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, Mo and Ti.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 supports the light emitting device according to the embodiment, and may be electrically connected to the external electrode to provide power to the first light emitting structure 10. The bonding layer 60 may be implemented as a seed layer.

The support member 70 may be disposed under the bonding layer 60. The support member 70 may be disposed below the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. The support member 70 may include a conductive material. The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). The support member 70 may be formed of an insulating material. The support member 70 may be formed of a material such as Al ₂ O ₃ , SiO _2, or the like.

Meanwhile, the electrode 80 may be disposed on the fifth semiconductor layer 31 of the first conductivity type. The electrode 80 may be electrically connected to the fifth semiconductor layer 31 of the first conductivity type. The electrode 80 may be in contact with the upper surface of the fifth semiconductor layer 31 of the first conductivity type.

Accordingly, the first light emitting structure (10) is formed by the electrode (80) and the first reflective electrode (17). The second light emitting structure 20, and the third light emitting structure 30 can be supplied with power. The first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 are electrically connected in series. Accordingly, when power is applied through the electrode (80) and the first reflective electrode (17), the first light emitting structure (10), the second light emitting structure (20), the third light emitting structure Light can be provided.

According to the embodiment, the electrode 80 may be formed in a multi-layered structure. The electrode 80 may be formed of an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extracting pattern may be provided on the upper surfaces of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. A concave-convex pattern may be provided on the upper surfaces of the first, second, and third light emitting structures 10, 20, and 30. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

Meanwhile, a PEC (Photo Electric Chemical) etching process may be applied to the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30, for example, have. In the case where the PEC etching process is applied, if there is an insulating layer around and below the light emitting structures, the etching process may occur along the insulating layer in the PEC process. At this time, when the etching proceeds along the insulating layer, the semiconductor layer constituting each of the light emitting structures, particularly, each active layer may be damaged. In addition, if the etching proceeds along the insulating layer, peeling may occur between the light emitting structure and the insulating layer, which may cause a short or the like, thereby deteriorating electrical reliability. However, according to the embodiment, since there is no insulating layer around the light emitting structure, the light emitting structure can be prevented from being damaged even when the PEC etching process is performed.

The upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 may be formed to be N-shaped. In the case where the first light emitting structure 10, the second light emitting structure 20, The light extraction efficiency can be further improved because the surface roughness is large. Further, an undoped GaN layer may be further disposed between the electrode 80 and the fifth semiconductor layer 31 of the first conductivity type. As a result, the undoped GaN layer can function as a kind of a ballast resistor with respect to the electrode 80 contacting the N surface, and the operating voltage can be varied.

A protective layer may further be disposed on the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. The protective layer may be formed of an oxide or a nitride. The protective layer is, for _{example, SiO 2, SiO x, SiO} x N y, Si ₃ N ₄ , or Al ₂ O ₃ . The protective layer may be provided around the first light emitting structure 10 and the third light emitting structure 30.

According to the embodiment, the neighboring light emitting structures may be electrically connected in series through the first contact portion 43 and the second contact portion 53. Since an additional insulating layer is not disposed between the first light emitting structure 10 and the second light emitting structure 20, the step of etching the insulating layer in forming the first contact portion 43 Is not required. As a result, the manufacturing stability of the first contact portion 43 can be improved. That is, since the process for forming the insulating layer and the etching process for the insulating layer are not required, the process stability can be secured relatively.

In the above description, the first contact portion 43 and the second contact portion 53 are provided for electrical connection between the light emitting structures. However, in the embodiment, the first semiconductor layer 11 of the first light emitting structure 10 and the fourth semiconductor layer 23 of the second light emitting structure 20 are electrically connected to each other by the second metal layer 29 Can be connected. Accordingly, the first contact portion 43 may be selectively removed. The third semiconductor layer 21 of the second light emitting structure 20 and the sixth semiconductor layer 33 of the third light emitting structure 20 are electrically connected by the third metal layer 39 . Accordingly, the second contact portion 53 may be selectively removed.

The light emitting device according to the embodiment includes a plurality of light emitting cells. Each of the light emitting cells may include a metal layer, a second conductive type semiconductor layer on the metal layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer. The light emitting device according to the embodiment includes a contact portion that is in contact with the side surface of the first conductivity type semiconductor layer of the first light emitting cell among the plurality of light emitting cells and is electrically connected to the metal layer of the second light emitting cell adjacent to the first light emitting cell .

At this time, the contact portion may be in contact with the upper surface of the first conductivity type semiconductor layer of the first light emitting cell and may be in contact with the upper surface of the metal layer of the second light emitting cell. According to the light emitting device of the embodiment, the insulating layer may be disposed between the contact portion and the active layer of the first light emitting cell, and between the contact portion and the second conductive semiconductor layer of the first light emitting cell.

The insulating layer may electrically insulate the contact portion from the active layer of the first light emitting cell. The insulating layer may electrically isolate the contact portion from the second conductivity type semiconductor layer of the first light emitting cell. The insulating layer electrically isolates the metal layer of the first light emitting cell from the metal layer of the second light emitting cell, and a part of the metal layer may be disposed in the first conductive semiconductor layer of the first light emitting cell. In addition, an electrode electrically connected to the first conductivity type semiconductor layer of the second light emitting cell may be included. Accordingly, when power is supplied to the metal layer included in the first light emitting cell and the electrode included in the second light emitting cell, the first light emitting cell and the second light emitting cell are electrically connected in a series structure, .

A method of manufacturing a light emitting device according to an embodiment will now be described with reference to FIGS. 2 to 7. FIG.

2, a first conductivity type semiconductor layer 11a, an active layer 12a, and a second conductivity type semiconductor layer 13a are formed on a substrate 5, as shown in FIG. do. The first conductive semiconductor layer 11a, the active layer 12a and the second conductive semiconductor layer 13a may be defined as a light emitting structure 10a.

The substrate 5 may be formed of at least one of, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. A buffer layer may be further formed between the first semiconductor layer 11 of the first conductivity type and the substrate 5.

For example, the first conductivity type semiconductor layer 11a may be formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13a may be formed of a second conductivity type dopant Type semiconductor layer to which a p-type dopant is added. Also, the first conductivity type semiconductor layer 11a may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may be formed of an n-type semiconductor layer.

The first conductivity type semiconductor layer 11a may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11a is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The first conductivity type semiconductor layer 11a may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN and the like. An n-type dopant such as Si, Ge, .

Electrons (or holes) injected through the first conductive type semiconductor layer 11a and holes (or electrons) injected through the second conductive type semiconductor layer 13a meet with each other in the active layer 12a, And is a layer that emits light by a band gap difference of an energy band according to a material of the active layer 12a. The active layer 12a may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12a may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? When the active layer 12a is formed in the multi-well structure, the active layer 12a may be formed by laminating a plurality of well layers and a plurality of barrier layers. For example, the active layer 12a may be formed by a periodic structure of an InGaN well layer / GaN barrier layer .

The second conductive semiconductor layer 13a may be formed of, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13a is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductivity type semiconductor layer 13a may be selected from InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN and the like, and a p-type dopant such as Mg, Zn, Ca, .

Meanwhile, the first conductive semiconductor layer 11a may include a p-type semiconductor layer, and the second conductive semiconductor layer 13a may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13a. Thus, the light emitting structure 10a may include a np, pn, npn, Or a structure thereof. The doping concentration of impurities in the first conductivity type semiconductor layer 11a and the second conductivity type semiconductor layer 13a may be uniform or non-uniform. That is, the structure of the light emitting structure 10a may be variously formed, but is not limited thereto.

A first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11a and the active layer 12a. In addition, a second conductivity type AlGaN layer may be formed between the second conductivity type semiconductor layer 13a and the active layer 12a.

3, a first ohmic contact layer 15 and a first reflective electrode 17 are formed on a first region of the second conductivity type semiconductor layer 13a. A second ohmic contact layer 25 and a second reflective electrode 27 are formed on a second region of the second conductivity type semiconductor layer 13a and a third region of the second conductivity type semiconductor layer 13a, A third ohmic contact layer 35, and a third reflective electrode 37 are formed on the second substrate.

The first ohmic contact layer 15, the second ohmic contact layer 25, and the third ohmic contact layer 35 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15, the second ohmic contact layer 25 and the third ohmic contact layer 35 may be formed of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO Indium Gallium Zinc Oxide (IZTO), IGTO (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) And may be formed of at least one material selected from GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt and Ag.

The first reflective electrode 17, the second reflective electrode 27, and the third reflective electrode 37 may be formed of a metal having a high reflectivity. For example, the first reflective electrode 17, the second reflective electrode 27, and the third reflective electrode 37 may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Au, and Hf. The first reflective electrode 17, the second reflective electrode 27 and the third reflective electrode 37 may be formed of a metal or an alloy of indium-tin-oxide (ITO), indium-zinc-oxide IZTO (Indium-Zinc-Tin-Oxide), IZO (Indium-Aluminum-Zinc-Oxide), IGZO (Indium-Gallium- Zinc-Oxide), ATO (Antimony-Tin-Oxide), or the like. For example, in the embodiment, the first reflective electrode 17, the second reflective electrode 27, and the third reflective electrode 37 may be formed of Ag, Al, Ag-Pd-Cu alloy, Ag-Cu Or an alloy thereof.

4, a first insulating layer 41 is formed between the second semiconductor layer 13 of the second conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The first insulating layer 41 is also formed between the first active layer 12 and the second active layer 22. A part of the first insulating layer 41 may be formed in contact with the first ohmic contact layer 15. The first insulating layer 41 may be formed in contact with the first conductive semiconductor layer 11a. The first insulating layer 41 may be formed of a light-transmitting or insulating material. The first insulating layer 41 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like.

A second insulating layer 51 is formed between the fourth semiconductor layer 23 of the second conductivity type and the sixth semiconductor layer 33 of the second conductivity type. The second insulating layer 51 is also formed between the second active layer 22 and the third active layer 32. A portion of the second insulating layer 51 may be formed in contact with the second ohmic contact layer 25. The second insulating layer 51 may be formed in contact with the first conductive semiconductor layer 11a. The second insulating layer 51 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like.

5, the first reflection electrode 17, the second reflection electrode 27, the third reflection electrode 37, the first insulation layer 41, the second insulation layer 37, A metal layer is formed on the layer 51, and a third insulating layer 40 is formed. The metal layer may be separated into the first metal layer 19, the second metal layer 29, and the third metal layer 39 by the third insulating layer 40. The first metal layer 19, the second metal layer 29 and the third metal layer 39 may be electrically insulated by the third insulating layer 40. The third insulating layer 40 may be formed in contact with the first insulating layer 41. The third insulating layer 40 may be formed in contact with the second insulating layer 51.

At least one of Ni, Ti-W, W, Pt, V, Fe, Mo, Ti, and Cr may be used as the first metal layer 19, the second metal layer 29, . The first metal layer 19, the second metal layer 29, and the third metal layer 39 may be formed of a transparent conductive oxide film. The third insulating layer 40 may be formed of a light-transmitting or insulating material. The third insulating layer 40 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like.

The process of forming the first metal layer 19, the second metal layer 29, the third metal layer 39, and the third insulating layer 40 may be variously modified. For example, the third insulating layer 40 may be formed through a plurality of processes. The first metal layer 19, the second metal layer 29, and the third metal layer 39 may be formed separately.

5, a diffusion barrier layer 50, a bonding layer 60, and a supporting member 70 are formed on the first metal layer 19 and the third insulating layer 40. Next, as shown in FIG.

The diffusion barrier layer 50 may function to prevent diffusion of a material contained in the bonding layer 60 toward the first reflective electrode 17 in the process of providing the bonding layer 60 have. The diffusion barrier layer 50 may prevent a material such as tin contained in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt.

The bonding layer 60 may include a barrier metal or a bonding metal and may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, . The support member 70 supports the light emitting device according to the embodiment and is electrically connected to the external electrode to supply power to the first reflective electrode 17. [

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). The support member 70 may be formed of an insulating material. The support member 70 may be formed of a material such as Al ₂ O ₃ , SiO _2, or the like.

Next, the substrate 5 is removed from the first conductive type semiconductor layer 11a. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a process of irradiating a laser on the lower surface of the substrate 5 to peel the substrate 5 and the first conductivity type semiconductor layer 11a from each other.

6, isolation etching is performed to separate the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. Next, as shown in FIG. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. The first metal layer 19, the second metal layer 29, and the third metal layer 39 may be partially exposed by the isolation etching. At this time, the process may be performed so that the first insulating layer 41 and the second insulating layer 51 are not exposed to the outside by the isolation etching.

Next, as shown in FIG. 6, the first contact portion 43 and the second contact portion 53 may be formed. The first contact portion 43 may be formed between the first light emitting structure 10 and the second light emitting structure 20. [ The first contact part 43 electrically connects the first semiconductor layer 11 of the first conductivity type and the second reflective electrode 27. The first contact part 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the side surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be in contact with the upper surface of the second metal layer 29. The first contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. The first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. The first contact portion 43 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The first contact portion 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face of the first semiconductor layer 11 of the first conductivity type.

A first insulating layer 41 may be disposed between the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type. The first insulating layer 41 may be disposed between the first contact part 43 and the first active layer 12. [ The first insulating layer 41 may be disposed under the first semiconductor layer 11 of the first conductivity type.

In addition, the second contact portion 53 may be formed between the second light emitting structure 20 and the third light emitting structure 30. The second contact portion 53 electrically connects the third semiconductor layer 21 of the first conductivity type and the third reflective electrode 37. The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the side surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be in contact with the upper surface of the third metal layer 39. The second contact portion 53 may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type. The third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the second contact portion 53 may be in contact with the N face of the third semiconductor layer 21 of the first conductivity type.

A second insulating layer 51 may be disposed between the second contact portion 53 and the fourth semiconductor layer 23 of the second conductivity type. The second insulating layer 51 may be disposed between the second contact portion 53 and the second active layer 22. The second insulating layer 51 may be disposed under the third semiconductor layer 21 of the first conductivity type.

A light extraction pattern may be provided on the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. A concave-convex pattern may be provided on the upper surfaces of the first, second, and third light emitting structures 10, 20, and 30. Accordingly, according to the embodiment, the effect of extracting external light can be increased. The upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 may be formed to be N-shaped. In the case where the first light emitting structure 10, the second light emitting structure 20, The light extraction efficiency can be further improved because the surface roughness is large.

A PEC (Photo Electric Chemical) etching process may be applied to form the light extracting pattern in the first, second, and third light emitting structures 10, 20, and 30. In the case where the PEC etching process is applied, if there is an insulating layer around and below the light emitting structures, the etching process may occur along the insulating layer in the PEC process. At this time, when the etching proceeds along the insulating layer, the semiconductor layer constituting each of the light emitting structures, particularly, each active layer may be damaged. In addition, if the etching proceeds along the insulating layer, peeling may occur, resulting in a short circuit or the like, which may deteriorate electrical reliability. However, according to the embodiment, since there is no insulating layer around the light emitting structure, the light emitting structure can be prevented from being damaged even when the PEC etching process is performed.

Meanwhile, the electrode 80 may be disposed on the fifth semiconductor layer 31 of the first conductivity type. The electrode 80 may be electrically connected to the fifth semiconductor layer 31 of the first conductivity type. The electrode 80 may be in contact with the upper surface of the fifth semiconductor layer 31 of the first conductivity type.

Accordingly, the first light emitting structure (10) is formed by the electrode (80) and the first reflective electrode (17). The second light emitting structure 20, and the third light emitting structure 30 can be supplied with power. The first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 are electrically connected in series. Accordingly, when power is applied through the electrode (80) and the first reflective electrode (17), the first light emitting structure (10), the second light emitting structure (20), the third light emitting structure Light can be provided.

According to the embodiment, the electrode 80 may be formed in a multi-layered structure. The electrode 80 may be formed of an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A protective layer may further be disposed on the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. The protective layer may be formed of an oxide or a nitride. The protective layer is, for _{example, SiO 2, SiO x, SiO} x N y, Si ₃ N ₄ , or Al ₂ O ₃ . The protective layer may be provided around the first light emitting structure 10 and the third light emitting structure 30.

According to the embodiment, the neighboring light emitting structures may be electrically connected in series through the first contact portion 43 and the second contact portion 53. Since an additional insulating layer is not disposed between the first light emitting structure 10 and the second light emitting structure 20, the step of etching the insulating layer in forming the first contact portion 43 Is not required. As a result, the manufacturing stability of the first contact portion 43 can be improved. That is, since the process for forming the insulating layer and the etching process for the insulating layer are not required, the process stability can be secured relatively.

On the other hand, the forming process of each layer described above is one example, and the process sequence can be variously modified.

Also, as shown in FIG. 7, the first region 13b of the second semiconductor layer of the second conductivity type may be isolated from the plane by the first insulating layer 41. FIG. The first region 13b disposed on one side of the first insulating layer 41 by the first insulating layer 41 and the second region 13b disposed on the other side of the first insulating layer 41, Type second semiconductor layer 13 can be electrically insulated. For example, the first contact portion 43 may be in contact with the first region 13b, and the first contact portion 43 may be electrically isolated from the second semiconductor layer 13 of the second conductivity type, .

The structure for electrically insulating the first region 13b in contact with the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type may be variously modified. For example, the first insulating layer 41 may be formed as a closed loop that surrounds a central region in the first light emitting layer 10. [ Here, the center region of the first light emitting layer 10 is a region in which light is emitted by the first conductive type first semiconductor layer 11, the first active layer 12, and the second conductive type second semiconductor layer 13 Lt; / RTI > Accordingly, the central region and the peripheral region in the first light emitting layer 10 can be electrically isolated through the first insulating layer 41. As a result, the first region 13b in contact with the first contact portion 43 can be electrically insulated from the first active layer 12 and the second conductive type second semiconductor layer 13 contributing to light emission have.

8 is a view showing another example of the light emitting device according to the embodiment. In the following description of the light emitting device according to the embodiment shown in FIG. 8, a description of portions overlapping with those described with reference to FIG. 1 will be omitted.

The first contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The first contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be electrically connected to the second metal layer 29. The first contact part 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the side surface of the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be in contact with the upper surface of the second metal layer 29. The second metal layer 29 is electrically connected to the second reflective electrode 27 and the second ohmic contact layer 25 so that the first contact portion 43 is electrically connected to the fourth semiconductor layer 23 of the second conductivity type As shown in FIG. Accordingly, the first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. The first contact portion 43 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The first contact portion 43 may be in contact with the upper surface of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face of the first semiconductor layer 11 of the first conductivity type.

A first insulating layer 41 may be disposed between the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type. The first insulating layer 41 may be disposed between the first contact part 43 and the first active layer 12. [ The first insulating layer 41 may be disposed under the first semiconductor layer 11 of the first conductivity type. The first insulating layer 41 may electrically isolate the first contact part 43 from the first active layer 12. [ The first insulating layer 31 may electrically isolate the first contact part 43 from the second semiconductor layer 13. [

The first insulating layer 41 may be disposed inside the first semiconductor layer 11 of the first light emitting structure 10. The first contact portion 43 and the first insulating layer 41 may be spaced apart from each other. A portion of the second metal layer 29 may be disposed between the first contact portion 43 and the first insulating layer 41. A portion of the second metal layer 29 may be in contact with the first semiconductor layer 11. A portion of the second metal layer 29 may be in contact with the lower surface of the first semiconductor layer 11.

The first insulating layer 41 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like. The first insulating layer 41 may be connected to the third insulating layer 40. The third insulating layer 40 may electrically insulate the first metal layer 19 from the second metal layer 29.

The second contact portion 53 may be disposed between the second light emitting structure 20 and the third light emitting structure 30. [ The second contact portion 53 may be electrically connected to the third semiconductor layer 21. The second contact portion 53 may be electrically connected to the third metal layer 39. The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the side surface of the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be in contact with the upper surface of the third metal layer 39. The third metal layer 39 is electrically connected to the third reflective electrode 37 and the third ohmic contact layer 35 so that the second contact portion 53 is electrically connected to the sixth semiconductor Layer 33 as shown in FIG. Accordingly, the third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from Cr, Al, Ti, Ni, Pt, V, and Ag. The second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) Indium Aluminum Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO And may be formed of at least one selected material.

The second contact portion 53 may be in contact with the upper surface of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may include a GaN layer. At this time, considering the growth direction and the etching direction of the semiconductor layer, the second contact portion 53 may be in contact with the N face of the third semiconductor layer 21 of the first conductivity type.

A second insulating layer 51 may be disposed between the second contact portion 53 and the fourth semiconductor layer 23 of the second conductivity type. The second insulating layer 51 may be disposed between the second contact portion 53 and the second active layer 22. The second insulating layer 51 may be disposed under the third semiconductor layer 21 of the first conductivity type. The second insulating layer 45 may electrically isolate the second contact portion 53 from the second active layer 22. [ The second insulating layer 51 may electrically isolate the second contact portion 53 from the fourth semiconductor layer 23.

The second insulating layer 51 may be disposed inside the third semiconductor layer 21 of the second light emitting structure 20. The second contact portion 53 and the second insulating layer 51 may be spaced apart from each other. A portion of the third metal layer 39 may be disposed between the second insulating layer 51 and the second contact portion 43. A portion of the third metal layer 39 may be in contact with the third semiconductor layer 21. A portion of the third metal layer 39 may be in contact with the lower surface of the third semiconductor layer 21.

The second insulating layer 51 may be formed of a transparent or insulating material. The second insulating layer 51 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, and the like. The second insulating layer 51 may be connected to the third insulating layer 40. The third insulating layer 40 may electrically isolate the second metal layer 29 from the third metal layer 39.

The third insulating layer 40 may be disposed below the second metal layer 29 and the third metal layer 39. The third insulating layer 40 may be formed of an oxide or a nitride. The third insulating layer 40 may be formed of, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ . Also, the third insulating layer 40 may be disposed in contact with the first insulating layer 41. In addition, the third insulating layer 40 may be disposed in contact with the second insulating layer 51. A first region of the third insulating layer 40 may be disposed between the first metal layer 19 and the second metal layer 29. A second region of the third insulating layer 40 may be disposed between the second metal layer 29 and the third metal layer 39.

9 is a view showing still another example of the light emitting device according to the embodiment. In the following description of the light emitting device according to the embodiment shown in FIG. 9, the description of the parts overlapping with those described with reference to FIG. 1 will be omitted.

According to the light emitting device according to the embodiment, the first ohmic reflective electrode 16 may be disposed under the first light emitting structure 10. The first ohmic reflective electrode 16 may be implemented to perform both the functions of the first reflective electrode 17 and the first ohmic contact layer 15 described in FIG. Accordingly, the first ohmic reflective electrode 16 is in ohmic contact with the second semiconductor layer 13 of the second conductivity type, and can reflect light incident from the first light emitting structure 10 have.

Also, a second ohmic reflective electrode 26 may be disposed under the second light emitting structure 20. The second ohmic reflective electrode 26 may be implemented to perform both the functions of the second reflective electrode 27 and the second ohmic contact layer 25 described in FIG. Accordingly, the second ohmic reflective electrode 26 is in ohmic contact with the fourth semiconductor layer 23 of the second conductive type and can reflect light incident from the second light emitting structure 20 have.

Also, a third ohmic reflective electrode 36 may be disposed below the third light emitting structure 30. The third ohmic reflective electrode 36 may be implemented to perform both the functions of the third reflective electrode 37 and the third ohmic contact layer 35 described in FIG. Accordingly, the third ohmic reflective electrode 36 may be in ohmic contact with the sixth semiconductor layer 33 of the second conductivity type, and may reflect light incident from the third light emitting structure 30 have.

10 is a view showing still another example of the light emitting device according to the embodiment. In the description of the light emitting device according to the embodiment shown in FIG. 10, the description of the parts overlapping with those described with reference to FIG. 8 will be omitted.

According to the light emitting device according to the embodiment, the first ohmic reflective electrode 16 may be disposed under the first light emitting structure 10. The first ohmic reflective electrode 16 may be implemented to perform both the functions of the first reflective electrode 17 and the first ohmic contact layer 15 described in FIG. Accordingly, the first ohmic reflective electrode 16 is in ohmic contact with the second semiconductor layer 13 of the second conductivity type, and can reflect light incident from the first light emitting structure 10 have.

Also, a second ohmic reflective electrode 26 may be disposed under the second light emitting structure 20. The second ohmic reflective electrode 26 may be implemented to perform both functions of the second reflective electrode 27 and the second ohmic contact layer 25 described in FIG. Accordingly, the second ohmic reflective electrode 26 is in ohmic contact with the fourth semiconductor layer 23 of the second conductive type and can reflect light incident from the second light emitting structure 20 have.

Also, a third ohmic reflective electrode 36 may be disposed below the third light emitting structure 30. The third ohmic reflective electrode 36 may be implemented to perform both the functions of the third reflective electrode 37 and the third ohmic contact layer 35 described in FIG. Accordingly, the third ohmic reflective electrode 36 may be in ohmic contact with the sixth semiconductor layer 33 of the second conductivity type, and may reflect light incident from the third light emitting structure 30 have.

11 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

Referring to FIG. 11, a light emitting device package according to an embodiment includes a body 120, first and second lead electrodes 131 and 132 disposed on the body 120, And a molding member 140 surrounding the light emitting device 100. The first and second lead electrodes 131 and 132 are electrically connected to the first and second lead electrodes 131 and 132, .

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other to provide power to the light emitting device 100. The first lead electrode 131 and the second lead electrode 132 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and the heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 120 or may be disposed on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by a wire, flip chip or die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting elements are arrayed, and may include the display apparatus shown in Figs. 12 and 13, and the illumination apparatus shown in Fig.

12, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device 100 according to the embodiment described above. The light emitting devices 100 may be arrayed on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting device 100 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting devices 100 may be mounted such that the light emitting surface of the light emitting device 100 is spaced apart from the light guiding plate 1041 by a predetermined distance, but the present invention is not limited thereto. The light emitting device 100 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

13 is a view showing another example of the display device according to the embodiment.

13, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device 100 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

14 is a perspective view of a lighting apparatus according to an embodiment.

14, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 may be formed of a material having a good heat dissipation property, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device 100 according to an embodiment provided on the substrate 1532. A plurality of the light emitting devices 100 may be arrayed in a matrix or spaced apart at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device 100 may be disposed on the substrate 1532. Each of the light emitting devices 100 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting devices 100 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source through a socket, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

The embodiment may be implemented as a light emitting module mounted on the substrate after the light emitting device 100 is packaged, or as a light emitting module mounted on an LED chip.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: first light emitting structure 11: first semiconductor layer
12: first active layer 13: second semiconductor layer
15: first ohmic contact layer 17: first reflective electrode
19: first metal layer 20: second light emitting structure
21: third semiconductor layer 22: second active layer
23: fourth semiconductor layer 25: second ohmic contact layer
27: second reflective electrode 29: second metal layer
30: third light emitting structure 31: fifth semiconductor layer
32: third active layer 33: sixth semiconductor layer
35: third ohmic contact layer 37: third reflective electrode
39: third metal layer 40: third insulating layer
41: first insulating layer 43: first contact portion
50: diffusion barrier layer 51: second insulating layer
53: second contact portion 60: bonding layer
70: support member 80: electrode

Claims (21)

A first light emitting structure including a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer, and a second semiconductor layer of a second conductivity type below the first active layer;
A first metal layer below the first light emitting structure;
A second light emitting structure including a third semiconductor layer of a first conductivity type, a second active layer below the third semiconductor layer, and a fourth semiconductor layer of a second conductivity type below the second active layer;
A second metal layer below the second light emitting structure;
A contact electrically connected to the first semiconductor layer and electrically connected to the second metal layer; And
The first metal layer and the second metal layer are electrically insulated from each other and a portion of the first metal layer and the second active layer are covered with an insulating layer ≪ / RTI >
An insulating layer disposed inside the first semiconductor layer and the contact portion are disposed apart from each other,
Wherein the second semiconductor layer includes a first region disposed on one side of the insulating layer and a second region disposed on the other side of the insulating layer and electrically insulated from the first region, 2 semiconductor layer and is insulated from a second region of the second semiconductor layer,
Wherein the contact portion is in direct contact with and electrically connected to the upper surface and the side surface of the first semiconductor layer. The method according to claim 1,
The contact portion is in contact with the upper surface of the second metal layer,
A diffusion barrier layer disposed under the first metal layer and the insulating layer; a bonding layer disposed under the diffusion barrier layer; and a support member disposed under the bonding layer. The method according to claim 1,
Wherein the first ohmic contact layer and the first reflective electrode are disposed under the first light emitting structure and the first metal layer is disposed around the first ohmic contact layer and under the first reflective electrode,
And a second ohmic contact layer and a second reflective electrode disposed under the second light emitting structure, wherein the second metal layer is disposed around the second ohmic contact layer and under the second reflective electrode. delete The method according to claim 1,
Wherein the contact portion is disposed on the concavo-convex pattern of the upper surface of the first semiconductor layer, the concavo-convex pattern being disposed on the first semiconductor layer. delete delete The method of claim 3,
Wherein a first ohmic contact layer is disposed between the first reflective electrode and the second semiconductor layer and a second ohmic contact layer is disposed between the second reflective electrode and the fourth semiconductor layer. delete delete The method according to claim 1,
Wherein when the first semiconductor layer includes a GaN layer, the contact portion is in contact with the N surface of the first semiconductor layer. delete delete delete delete delete delete delete delete delete delete

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