KR20130031675A - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting device package, and a light unit are provided to secure reliability by using light emitting cells which are serially connected to each other. CONSTITUTION: A first light emitting structure(10) comprises a semiconductor layer(11) of a first conductivity type, a first active layer(12), and a second semiconductor layer(13) of a second conductivity type. A second light emitting structure(20) comprises a third semiconductor layer(21) of the first conductivity type, a second active region(22), and a fourth semiconductor layer(23) of the second conductivity type. A semiconductor contact part(43) electrically connects the first semiconductor layer of the first conductivity type to the fourth semiconductor layer of the second conductivity type.

Description

Light Emitting Devices, Light Packages, Light Units {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

The embodiment provides a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells electrically connected in series with reliability.

The light emitting device according to the embodiment includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A semiconductor contact portion electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; It includes.

The light emitting device according to the embodiment may include a plurality of light emitting cells including a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A semiconductor contact portion electrically connected to a first conductive semiconductor layer of a first light emitting cell and a second conductive semiconductor layer of a second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer under the first conductive layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising a; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A semiconductor contact portion electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes: a plurality of light emitting cells including a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer, respectively. ; A semiconductor contact portion electrically connected to a first conductive semiconductor layer of a first light emitting cell and a second conductive semiconductor layer of a second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising a; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A semiconductor contact portion electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a plurality of light emitting cells including a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer, respectively. ; A semiconductor contact portion electrically connected to a first conductive semiconductor layer of a first light emitting cell and a second conductive semiconductor layer of a second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells; It includes.

The light emitting device, the light emitting device package, and the light unit according to the embodiment may provide a plurality of light emitting cells with reliability and electrically connected in series.

1 is a view showing a light emitting device according to an embodiment.
2 to 5 are views illustrating a light emitting device manufacturing method according to an embodiment.
6 to 8 are diagrams showing modified examples of the light emitting device according to the embodiment.
9 is a view illustrating a light emitting device package according to an embodiment.
10 is a view showing a display device according to the embodiment.
11 is a view showing another example of the display device according to the embodiment.
12 is a view showing a lighting device according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

As shown in FIG. 1, the light emitting device according to the embodiment may include a first light emitting structure 10, a second light emitting structure 20, a first reflecting electrode 17, a second reflecting electrode 27, and a semiconductor contact. The unit 43 and the electrode 80 may be included. 1 illustrates a case in which two light emitting structures are disposed, the light emitting device according to the embodiment may include three light emitting structures and may also include four or more light emitting structures. The plurality of light emitting structures may be electrically connected in series. The plurality of light emitting structures may be disposed on the support substrate 70.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed under the first semiconductor layer 11 of the first conductivity type, and the second semiconductor layer 13 of the second conductivity type may be below the first active layer 12. Can be placed in.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer to which an n-type dopant is added as the first conductivity type dopant, and the second semiconductor layer 13 of the second conductivity type. The second conductive dopant may be formed of a p-type semiconductor layer to which a p-type dopant is added. Further, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. A first semiconductor layer (11) of the first conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The first semiconductor layer 11 of the first conductivity type may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Sn, Se, Te, and the like may be doped.

The first active layer 12 is electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and holes injected through the second semiconductor layer 13 of the second conductivity type ( Or electrons) meet each other and emit light due to a band gap difference of an energy band according to a material of forming the first active layer 12. The first active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The first active layer 12 is implemented as an example of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be. When the first active layer 12 is implemented as the multi quantum well structure, the first active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer. It can be implemented in the cycle of the / GaN barrier layer.

The second semiconductor layer 13 of the second conductivity type may be implemented with, for example, a p-type semiconductor layer. A second semiconductor layer (13) of the second conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The second conductive second semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. P-type dopants such as, Ca, Sr, and Ba may be doped.

The first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductive layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be uniformly or nonuniformly formed. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first semiconductor layer 11 of the first conductivity type and the first active layer 12. In addition, a second conductive AlGaN layer may be formed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed below the third semiconductor layer 21 of the first conductivity type, and the fourth semiconductor layer 23 of the second conductivity type may be below the second active layer 22. Can be placed in. The second light emitting structure 20 may be similarly formed in accordance with the first light emitting structure 10 described above.

The first ohmic contact layer 15 and the first reflective electrode 17 may be disposed under the first light emitting structure 10. The first channel layer 16 may be disposed under the first light emitting structure 10 and around the first ohmic contact layer 15.

The first channel layer 16 may be formed of, for example, a material having electrical insulation. The first channel layer 16 may be formed of, for example, oxide or nitride. For example, the first channel layer 16 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The first channel layer 16 may also be referred to as an isolation layer.

The first ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO) or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The first reflective electrode 17 may be formed of a metal material having a high reflectance. For example, the first reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the first reflecting electrode 17 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Transmissive conductive materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in an embodiment, the first reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The first ohmic contact layer 15 may be formed to be in ohmic contact with the first light emitting structure 10. In addition, the first reflective electrode 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the first light emitting structure 10.

In addition, a second ohmic contact layer 25 and the second reflective electrode 27 may be disposed under the second light emitting structure 20. The second channel layer 26 may be disposed under the second light emitting structure 20 and around the second ohmic contact layer 25.

The second channel layer 26 may be formed of, for example, a material having electrical insulation. The second channel layer 26 may be formed of, for example, oxide or nitride. For example, the second channel layer 26 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The second channel layer 26 may be referred to as an isolation layer.

The second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The second ohmic contact layer 25 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The second reflecting electrode 27 may be formed of a metal material having a high reflectance. For example, the second reflective electrode 27 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the third reflecting electrode 37 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Transmissive conductive materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in the exemplary embodiment, the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The second ohmic contact layer 25 may be formed in ohmic contact with the second light emitting structure 20. In addition, the second reflective electrode 27 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the second light emitting structure 20.

The semiconductor contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The semiconductor contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The semiconductor contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. A portion of the semiconductor contact portion 43 may be in contact with the first semiconductor layer 11 of the first conductivity type. An upper surface of the semiconductor contact portion 43 may be in contact with the first semiconductor layer 11 of the first conductivity type. A portion of the semiconductor contact portion 43 may be in contact with the fourth semiconductor layer 23 of the second conductivity type. The semiconductor contact portion 43 may be in contact with the second ohmic contact layer 25. The semiconductor contact portion 43 may be in contact with the second reflective electrode 27.

The semiconductor contact portion 43 may be implemented with a semiconductor material. For example, the semiconductor contact portion 43 may be formed of the same material as the first semiconductor layer 11 of the first conductivity type. In addition, the semiconductor contact portion 43 may be formed of a semiconductor material forming the first light emitting structure 10 or the second light emitting structure 20.

A second insulating layer 41 may be disposed between the semiconductor contact portion 43 and the first light emitting structure 10. The second insulating layer 43 may be disposed between the semiconductor contact portion 43 and the first semiconductor layer 11 of the first conductivity type. The second insulating layer 43 may be disposed between the semiconductor contact portion 43 and the first active layer 12. The second insulating layer 43 may be disposed between the semiconductor contact portion 43 and the second semiconductor layer 13 of the second conductivity type.

The second insulating layer 41 may be formed of oxide or nitride. The second insulating layer 41 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The second insulating layer 41 may be made of an insulating material such as TiO ₂ , AlN.

A third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the second light emitting structure 20. The third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the third semiconductor layer 21 of the first conductivity type. The third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the second active layer 22. The third insulating layer 45 may be disposed between the semiconductor contact portion 43 and the fourth semiconductor layer 23 of the second conductivity type.

The third insulating layer 45 may be formed of an oxide or a nitride. The third insulating layer 45 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The third insulating layer 45 may be made of an insulating material such as TiO ₂ , AlN.

A portion of the semiconductor contact portion 43 may be exposed between the first light emitting structure 10 and the second light emitting structure 20. An upper surface of the semiconductor contact portion 43 may be exposed between the first semiconductor layer 11 of the first conductivity type and the third semiconductor layer 21 of the first conductivity type.

The semiconductor contact portion 43 may be in contact with the inside of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the semiconductor contact portion 43 may be in contact with a Ga face of the first semiconductor layer 11 of the first conductivity type. As described above, according to the embodiment, the semiconductor contact portion 43 may contact the Ga surface of the first semiconductor layer 11 of the first conductivity type, so that thermal stability may be secured as compared with the N surface. do. In addition, according to the embodiment, since the semiconductor contact portion 43 may be in contact with the Ga surface of the first semiconductor layer 11 of the first conductivity type, the variation of the characteristic curve according to the operating voltage may be lower than that of the N contact surface. It can be secured to be small and can be usefully applied to high current.

The first insulating layer 40 may be disposed under the semiconductor contact portion 43 and the second reflective electrode 27. The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The first insulating layer 40 may be made of an insulating material, such as TiO ₂ , AlN.

A diffusion barrier layer 50 may be disposed under the first reflective electrode 17 and the first insulating layer 40. The bonding layer 60 and the support member 70 may be disposed below the diffusion barrier layer 50.

In the diffusion barrier layer 50, a material included in the bonding layer 60 diffuses toward the first reflection electrode 17 and the second reflection electrode 27 in a process in which the bonding layer 60 is provided. Can be prevented. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17, the second reflective electrode 27, or the like. have. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, and Mo materials.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 may support the light emitting structures according to the embodiment, and may be electrically connected to an external electrode to provide power to the first light emitting structure 10. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with an upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure 10 by the electrode 80 and the first reflective electrode 17. Power may be provided to the second light emitting structure 20. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is applied through the electrode 80 and the first reflective electrode 17, light may be provided from the first light emitting structure 10 and the second light emitting structure 20.

In addition, the first light emitting structure 10 and the second light emitting structure 20 may be electrically connected by the semiconductor contact portion 43 according to the embodiment. As described above, according to the embodiment, the first semiconductor layer 11 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type are electrically connected to each other through the semiconductor contact portion 43. There is no need to form metallic contacts. In addition, when the isolation etching of the first light emitting structure 10 and the second light emitting structure 20 is separated, the depth to be etched may be reduced, and the etching width may be reduced since no separate contact portion is required. Will be. As a result, process stability can be ensured and the area of the light emitting structure can be efficiently utilized.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may implement an ohmic contact by including a material selected from Cr, V, W, Ti, and Zn. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extraction pattern may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Concave-convex patterns may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

The light emitting device according to the embodiment includes a plurality of light emitting cells. Each of the light emitting cells may include a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. The semiconductor light emitting device may include a semiconductor contact part electrically connected to the first conductive semiconductor layer of the first light emitting cell and the second conductive semiconductor layer of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells.

The semiconductor contact portion may contact the first conductive semiconductor layer of the first light emitting cell. The semiconductor contact portion may include the same material as the first conductive semiconductor layer of the first light emitting cell. The semiconductor contact portion may contact the second conductive semiconductor layer of the second light emitting cell. The semiconductor contact unit may contact the reflective electrode of the second light emitting cell. A portion of the semiconductor contact portion may be exposed between the first conductivity type semiconductor layer of the first light emitting cell and the first conductivity type semiconductor layer of the second light emitting cell. When the first conductivity type semiconductor layer of the first light emitting cell includes a GaN layer, the semiconductor contact portion may contact the Ga surface of the first conductivity type semiconductor layer of the first light emitting cell.

The electrode may include an electrode electrically connected to the first conductivity-type semiconductor layer of the second light emitting cell.

Next, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 2 to 5.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 2, the first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a are formed on the growth substrate 5. Form. The first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a may be defined as a light emitting structure 10a.

The growth substrate 5 may be formed of, for example, at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer may be further formed between the first semiconductor layer 11 of the first conductivity type and the growth substrate 5.

For example, the first conductivity type semiconductor layer 11a is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13a is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductivity type semiconductor layer 11a may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may be formed of an n-type semiconductor layer.

The first conductivity-type semiconductor layer 11a may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer (11a) is of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 11a may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. Can be.

In the active layer 12a, electrons (or holes) injected through the first conductive semiconductor layer 11a and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. It is a layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12a may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

It said active layer (12a) may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12a is formed of the multi quantum well structure, the active layer 12a may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. It may be formed in a cycle.

The second conductivity-type semiconductor layer 13a may be implemented as, for example, a p-type semiconductor layer. The second conductive type semiconductor layer (13a) is of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The second conductive semiconductor layer 13a may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.

Meanwhile, the first conductivity type semiconductor layer 11a may include a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13a. Thus, the light emitting structure 10a may include a np, pn, npn, Or a structure thereof. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11a and the second conductive semiconductor layer 13a may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10a may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11a and the active layer 12a. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13a and the active layer 12a.

Next, as shown in FIG. 3, etching of a portion of the light emitting structure 10a may be performed to form a second insulating layer 41 and a third insulating layer 45. The second insulating layer 41 and the third insulating layer 45 may be formed of oxide or nitride. The second insulating layer 41 and the third insulating layer 45 are, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The second insulating layer 41 and the third insulating layer 45 may be formed of an insulating material, such as TiO ₂ , AlN.

Subsequently, a semiconductor contact portion 43 may be formed between the second insulating layer 41 and the third insulating layer 45. For example, the semiconductor contact portion 43 may be regrown from the first conductivity type semiconductor layer 11a. The semiconductor contact portion 43 may be implemented with a semiconductor material. The semiconductor contact portion 43 may be formed of the same material as the first semiconductor layer 11 of the first conductivity type or the second semiconductor layer 13 of the second conductivity type, for example. In addition, the semiconductor contact portion 43 may be formed of a semiconductor material forming the first light emitting structure 10 or the second light emitting structure 20. A portion of the semiconductor contact portion 43 may be formed to contact the fourth semiconductor layer 23 of the second conductivity type. In another embodiment, the semiconductor contact portion 43 may be regrown from the second conductivity type semiconductor layer 13a.

3, the first channel layer 16 and the second channel layer 26 are formed, and the first ohmic contact layer 15, the second ohmic contact layer 25, and the first reflective electrode are formed. (17), the second reflective electrode 27 can be formed.

The first ohmic contact layer 15 and the second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 and the second ohmic contact layer 25 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and aluminum gallium zinc oxide (AGZO). , IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO) Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag may be formed of at least one material selected from.

The first reflective electrode 17 and the second reflective electrode 27 may be formed of a metal material having a high reflectance. For example, the first reflecting electrode 17 and the second reflecting electrode 27 include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, Hf. It may be formed of a metal or an alloy. In addition, the first reflecting electrode 17 and the second reflecting electrode 27 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), or Indium-Zinc-Tin (IZTO). -Oxide, Indium-Aluminum-Zinc-Oxide, IAZO, Indium-Gallium-Zinc-Oxide, IGTO, Indium-Gallium-Tin-Oxide, AZO, Aluminum-Zinc-Oxide, ATO Tin-Oxide) may be formed into a multilayer using a light transmitting conductive material. For example, in some embodiments, the first reflective electrode 17 and the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. .

Next, as illustrated in FIG. 4, a first insulating layer 40 is formed on the semiconductor contact portion 43 and the second reflective electrode 27. The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The first insulating layer 40 may be made of an insulating material, such as TiO ₂ , AlN.

Meanwhile, the process of forming each layer described above is one example, and the process order may be variously modified.

Next, as shown in FIG. 4, a diffusion barrier layer 50, a bonding layer 60, and a support member 70 are formed on the first reflective electrode 17 and the first insulating layer 40. .

In the diffusion barrier layer 50, a material included in the bonding layer 60 diffuses toward the first reflection electrode 17 and the second reflection electrode 27 in a process in which the bonding layer 60 is provided. Can be prevented. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. . The support member 70 may support the light emitting device according to the embodiment and may be electrically connected to an external electrode to provide power to the first reflective electrode 17.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Next, the growth substrate 5 is removed from the first conductivity type semiconductor layer 11a. As one example, the growth substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a step of peeling the growth substrate 5 and the first conductive semiconductor layer 11a from each other by irradiating a laser onto the lower surface of the growth substrate 5.

As shown in FIG. 5, isolation etching is performed to separate the first light emitting structure 10 and the second light emitting structure 20. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. A portion of the semiconductor contact portion 43 may be exposed by the isolation etching. In addition, a light extraction pattern may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Concave-convex patterns may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with an upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure 10 by the electrode 80 and the first reflective electrode 17. Power may be provided to the second light emitting structure 20. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is applied through the electrode 80 and the first reflective electrode 17, light may be provided from the first light emitting structure 10 and the second light emitting structure 20.

In addition, the first light emitting structure 10 and the second light emitting structure 20 may be electrically connected by the semiconductor contact portion 43 according to the embodiment. As described above, according to the embodiment, the first semiconductor layer 11 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type are electrically connected to each other through the semiconductor contact portion 43. There is no need to form metallic contacts. In addition, when the isolation etching of the first light emitting structure 10 and the second light emitting structure 20 is separated, the depth to be etched may be reduced, and the etching width may be reduced since no separate contact portion is required. Will be. As a result, process stability can be ensured and the area of the light emitting structure can be efficiently utilized.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may implement an ohmic contact by including a material selected from Cr, V, W, Ti, and Zn. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

6 is a view showing another example of the light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 6, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

As shown in FIG. 6, the light emitting device according to the embodiment may be implemented such that the semiconductor contact portion 43 is not exposed between the first light emitting structure 10 and the second light emitting structure 20. The third insulating layer 45 may be exposed between the first light emitting structure 10 and the second light emitting structure 20. According to an embodiment, the semiconductor contact portion 43 may be safely insulated from the outside, and the semiconductor contact portion 43 may be stably insulated from the third semiconductor layer 21 of the first conductivity type. .

7 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 7, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

As shown in FIG. 7, the light emitting device according to the embodiment may be formed such that the semiconductor contact portion 43 does not directly contact the fourth semiconductor layer 23 of the second conductivity type. The semiconductor contact portion 43 may be in contact with the second ohmic contact layer 25. The semiconductor contact portion 43 may be in contact with the second reflective electrode 27. The semiconductor contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the second ohmic contact layer 25 or the second reflective electrode 27.

8 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 8, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

According to the light emitting device according to the embodiment, the first ohmic reflective electrode 19 may be disposed under the first light emitting structure 10. The first ohmic reflective electrode 19 may be implemented to perform both the first reflective electrode 17 and the first ohmic contact layer 15 described with reference to FIG. 1. Accordingly, the first ohmic reflective electrode 19 is in ohmic contact with the second semiconductor layer 13 of the second conductivity type, and may perform a function of reflecting light incident from the first light emitting structure 10. have.

In addition, a second ohmic reflective electrode 29 may be disposed under the second light emitting structure 20. The second ohmic reflective electrode 29 may be implemented to perform both the functions of the second reflective electrode 27 and the second ohmic contact layer 25 described with reference to FIG. 1. Accordingly, the second ohmic reflective electrode 29 is in ohmic contact with the fourth semiconductor layer 23 of the second conductivity type, and may function to reflect light incident from the second light emitting structure 20. have.

9 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

9, the light emitting device package according to the embodiment includes a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. Include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting elements are arrayed, and may include the display apparatus shown in Figs. 10 and 11, and the illumination apparatus shown in Fig.

10, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, a light guide plate 1041, a light emitting module 1031, and a reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

11 is a view showing another example of the display device according to the embodiment.

11, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

12 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 12, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment provided on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

According to the embodiment, the light emitting device may be packaged and mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to be implemented as a light emitting module.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: first light emitting structure 11: first semiconductor layer
12: first active layer 13: second semiconductor layer
15: first ohmic contact layer 16: first channel layer
17: first reflective electrode 20: second light emitting structure
21: third semiconductor layer 22: second active layer
23: fourth semiconductor layer 25: second ohmic contact layer
26: second channel layer 27: second reflective electrode
40: first insulating layer 41: second insulating layer
43: semiconductor contact portion 45: third insulating layer
50: diffusion barrier layer 60: bonding layer
70: support member 80: electrode

Claims (17)

A first light emitting structure comprising a first semiconductor layer of a first conductivity type, a first active layer under the first conductive layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer;
A first reflective electrode under the first light emitting structure;
A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer;
A second reflecting electrode under the second light emitting structure;
A semiconductor contact portion electrically connected to the first semiconductor layer of the first conductivity type and the fourth semiconductor layer of the second conductivity type;
Light emitting device comprising a. The method of claim 1,
The semiconductor contact portion is in contact with the first semiconductor layer of the first conductivity type. The method of claim 1,
The light emitting device of claim 1, wherein the semiconductor contact portion includes the same material as the first semiconductor layer of the first conductivity type. The method of claim 1,
The semiconductor contact portion is in contact with the fourth semiconductor layer of the second conductivity type. The method of claim 1,
The light emitting device of the semiconductor contact portion is in contact with the second reflective electrode. The method of claim 1,
A portion of the semiconductor contact portion is exposed between the first light emitting structure and the second light emitting structure. The method of claim 1,
A light emitting device comprising irregularities provided on an upper surface of the first semiconductor layer of the first conductivity type. The method of claim 1,
And the semiconductor contact portion is in contact with the Ga surface of the first semiconductor layer when the first conductive semiconductor layer comprises a GaN layer. A plurality of light emitting cells each comprising a reflective electrode, a second conductive semiconductor layer on the reflective electrode, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;
A semiconductor contact portion electrically connected to a first conductive semiconductor layer of a first light emitting cell and a second conductive semiconductor layer of a second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells;
Light emitting device comprising a. 10. The method of claim 9,
The semiconductor contact portion is in contact with the first conductive semiconductor layer of the first light emitting cell. 10. The method of claim 9,
The semiconductor contact unit includes a light emitting device including the same material as the first conductive semiconductor layer of the first light emitting cell. 10. The method of claim 9,
The semiconductor contact portion is in contact with the second conductive semiconductor layer of the second light emitting cell. 10. The method of claim 9,
The semiconductor contact portion is in contact with the reflective electrode of the second light emitting cell. 10. The method of claim 9,
A portion of the semiconductor contact portion is exposed between the first conductive semiconductor layer of the first light emitting cell and the first conductive semiconductor layer of the second light emitting cell. 10. The method of claim 9,
And the semiconductor contact portion is in contact with the Ga surface of the first conductive semiconductor layer of the first light emitting cell when the first conductive semiconductor layer of the first light emitting cell includes a GaN layer. Body;
A light emitting element according to any one of claims 1 to 15 arranged on the body;
A first lead electrode and a second lead electrode electrically connected to the light emitting device;
Emitting device package. Board;
A light emitting element according to any one of claims 1 to 15 arranged on the substrate;
An optical member through which light provided from the light emitting device passes;
Light unit comprising a.

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