KR20130078987A - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting device package, and a light unit are provided to simplify processes by forming a conductive ion implantation layer and a second insulation layer by an ion implantation process. CONSTITUTION: A light emitting structure (10) includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A reflection electrode (17) is arranged under the first area of the light emitting structure. A contact part (85) is arranged under the second part of the light emitting structure. A conductive ion implantation layer (83) electrically connects the contact part and the first conductive semiconductor layer. An electrode (80) is arranged on the contact part.

Description

Light-Emitting Device, Light-Emitting Package and Light Unit {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device is increased, a light emitting device is applied to various fields including a display device and a lighting device.

The embodiment provides a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method capable of simplifying a process and lowering an operating voltage.

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A reflective electrode disposed under the first region of the light emitting structure; A contact portion disposed under the second region of the light emitting structure; A conductive ion implantation layer electrically connecting the contact portion and the first conductivity type semiconductor layer; An electrode disposed on the contact portion; .

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; A light emitting structure including a first conductivity type semiconductor layer, an active layer below the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer below the active layer; A reflective electrode disposed under the first region of the light emitting structure; A contact portion disposed under the second region of the light emitting structure; A conductive ion implantation layer electrically connecting the contact portion and the first conductivity type semiconductor layer; An electrode disposed on the contact portion; .

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; A light emitting structure including a first conductive type semiconductor layer, an active layer below the first conductive type semiconductor layer, and a second conductive type semiconductor layer below the active layer; A reflective electrode disposed under the first region of the light emitting structure; A contact portion disposed under the second region of the light emitting structure; A conductive ion implantation layer electrically connecting the contact portion and the first conductivity type semiconductor layer; An electrode disposed on the contact portion; .

The light emitting device, the light emitting device package, the light unit, and the manufacturing method of the light emitting device according to the embodiment have the advantage of simplifying the process and lowering the operating voltage.

1 is a view illustrating a light emitting device according to an embodiment.
2 to 7 illustrate a method of manufacturing a light emitting device according to the embodiment.
8 to 13 are diagrams showing modified examples of the light emitting device according to the embodiment.
14 is a view illustrating a light emitting device package according to an embodiment.
15 is a diagram illustrating a display device according to an exemplary embodiment.
16 is a diagram illustrating another example of a display device according to an exemplary embodiment.
17 is a view showing a lighting apparatus according to an embodiment.

In the description of an embodiment, each layer (region), region, pattern, or structure is "on" or "under" the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed. do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, the thickness or size of each layer may be exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a method of manufacturing a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

As shown in FIG. 1, the light emitting device according to the embodiment may include a light emitting structure 10, a reflective electrode 17, an electrode 80, a conductive ion implantation layer 83, and a contact portion 85. . The reflective electrode 17 may be disposed under the light emitting structure 10 and may be electrically connected to the light emitting structure 10. The electrode 80 may be electrically connected to the light emitting structure 10. The contact portion 85 may be disposed under the light emitting structure 10. The conductive ion implantation layer 83 may electrically connect the contact portion 85 and the light emitting structure 10.

The light emitting structure 10 may include a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13. The first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be sequentially stacked. The active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. The active layer 12 may be disposed under the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed under the active layer 12.

For example, the first conductivity type semiconductor layer 11 is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is formed of an n- Type semiconductor layer to which a p-type dopant is added. The first conductivity type semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 may be formed of a compound semiconductor. The first conductivity type semiconductor layer 11 may be implemented as a group II-VI compound semiconductor or a group III-V compound semiconductor.

By way of example, having a compositional formula of the first conductive type semiconductor layer 11 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The first conductive semiconductor layer 11 may be selected from among GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, An n-type dopant such as Se or Te can be doped.

The active layer 12 is formed in such a manner that electrons (or holes) injected through the first conductive type semiconductor layer 11 and holes (or electrons) injected through the second conductive type semiconductor layer 13 meet with each other, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 12. [ The active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12 may be formed of a compound semiconductor. The active layer 12 may be embodied as a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + have. When the active layer 12 is implemented in a multi-well structure, the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, in a cycle of an InGaN well layer / GaN barrier layer. Can be implemented.

The second conductive semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second conductive semiconductor layer 13 may be formed of a compound semiconductor. The second conductive semiconductor layer 13 may be implemented as a group II-VI compound semiconductor or a group III-V compound semiconductor.

By way of example, having a composition formula of the second conductive type semiconductor layer 13 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The second conductive semiconductor layer 13 may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, A p-type dopant such as Sr, Ba or the like may be doped.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. Also, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductivity type semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12. In addition, a second conductive type AlGaN layer may be formed between the second conductive type semiconductor layer 13 and the active layer 12.

An ohmic contact layer 15 and the reflective electrode 17 may be disposed under the light emitting structure 10. The reflective electrode 17 may be disposed under the light emitting structure 10. The reflective electrode 17 may be disposed under the first region of the light emitting structure 10. The ohmic contact layer 15 may be disposed between the light emitting structure 10 and the reflective electrode 17. The ohmic contact layer 15 may be in contact with the second conductive semiconductor layer 13.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The ohmic contact layer 15 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and inaz Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt It may be formed of at least one material selected from Ag.

The reflective electrode 17 may be formed of a metal material having a high reflectance. For example, the reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective electrode 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc (AZO). Transmissive conductive materials such as -Oxide, IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide) and ATO (Antimony-Tin-Oxide) It can be formed in a multi-layer. For example, the reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The ohmic contact layer 15 may be formed in ohmic contact with the light emitting structure 10. In addition, the reflective electrode 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The contact portion 85 may be disposed under the light emitting structure 10. For example, the contact portion 85 may be disposed under the second area of the light emitting structure 10. For example, the contact portion 85 may be formed of the same material as the ohmic contact layer 15. In addition, the contact portion 85 may be formed of a material different from that of the ohmic contact layer 15. The contact portion 85 may be formed to be in ohmic contact with the semiconductor layer 81.

The contact portion 85 may be formed of a layer including at least one of In, Zn, Ag, Ni, and Pt. The contact portion 85 may be formed of, for example, a transparent conductive oxide layer. The contact portion 85 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or indium aluminum Zinc Oxide), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, It may be formed of at least one material selected from Ag.

The semiconductor layer 81 may include the same material as the second conductive semiconductor layer 13. For example, the semiconductor layer 81 may be formed of the same material when the second conductive semiconductor layer 13 is formed. The semiconductor layer 81 may contact the upper surface of the contact portion 85.

The conductive ion implantation layer 83 may be disposed on the semiconductor layer 81. The conductive ion implantation layer 83 may electrically connect the contact portion 85 and the first conductivity type semiconductor layer 11. The conductive ion implantation layer 83 may be electrically connected to the contact portion 85 through the semiconductor layer 81. The conductive ion implantation layer 83 may be in contact with the first conductivity type semiconductor layer 11.

For example, the conductive ion implantation layer 83 may be formed by an ion implantation process. The conductive ion implantation layer 83 may be formed by implanting metal ions by an implantation process. The conductive ion implantation layer 83 may be formed in a portion of the light emitting structure 10. The conductive ion implantation layer 83 may be a partial region of the first conductive semiconductor layer 11 constituting the light emitting structure 10, a partial region of the active layer 12, and the second conductive semiconductor layer 13. It may be formed by ion implantation in a portion of the region. The conductive ion implantation layer 83 may be formed in a portion of the light emitting structure 10 that does not contribute to light emission. For example, the conductive ion implantation layer 83 may be formed by implanting at least one ion among Ti ions, Al ions, and Au ions. The conductive ion implantation layer 83 may include at least one of Ti, Al, Au, and the like.

The first insulating layer 40 may be disposed between the contact portion 85 and the reflective electrode 17. The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN It may be formed of a material having an insulating property.

The second insulating layer 43 may be disposed on the first insulating layer 40. The second insulating layer 43 may electrically insulate the conductive ion implantation layer 83 from the active layer 12. The second insulating layer 43 may electrically insulate the conductive ion implantation layer 83 from the second conductive semiconductor layer 13. In addition, as illustrated in FIG. 7, the semiconductor layer 81 and the second conductive semiconductor layer 13 may be insulated by the second insulating layer 43. The second insulating layer 43 may be implemented to surround a portion of the semiconductor layer 81. Meanwhile, the structure of electrically insulating the semiconductor layer 81 and the second conductive semiconductor layer 13 may be variously modified.

The second insulating layer 43 may be implemented as an insulating ion implantation layer. The second insulating layer 43 may be formed by an ion implantation process. The second insulating layer 43 may be formed in a portion of the light emitting structure 10. The second insulating layer 43 may be a partial region of the first conductive semiconductor layer 11 forming the light emitting structure 10, a partial region of the active layer 12, and the second conductive semiconductor layer 13. It may be formed by ion implantation in a portion of the region. The second insulating layer 43 may be formed in a portion of the light emitting structure 10 that does not contribute to light emission. For example, the second insulating layer 43 may be formed by implanting at least one ion among H ions, O ions, Ar ions, and N ions. The second insulating layer 43 may include at least one of H, O, Ar, and N.

 A diffusion barrier layer 50 may be disposed around the reflective electrode 17. The diffusion barrier layer 50 may be disposed under the first insulating layer 40. The bonding layer 60 and the support member 70 may be disposed below the diffusion barrier layer 50. The diffusion barrier layer 50 may be disposed under the light emitting structure 10. The diffusion barrier layer 50 may be disposed around the ohmic contact layer 15. A portion of the diffusion barrier layer 50 may contact the first insulating layer 40.

The diffusion barrier layer 50 may function to prevent the material included in the bonding layer 60 from diffusing toward the reflective electrode 17 in the process of providing the bonding layer 60. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective electrode 17. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 may support the light emitting device according to the embodiment, and may be electrically connected to an external electrode to provide power to the reflective electrode 17. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Meanwhile, an electrode 80 may be disposed on the contact portion 85. The electrode 80 may be spaced apart from the side surface of the light emitting structure 10 by a predetermined distance. In addition, an insulating layer may be further disposed between the electrode 80 and the light emitting structure 10. The electrode 80 may be electrically connected to the first conductivity type semiconductor layer 11. The electrode 80 may be electrically connected to the first conductivity type semiconductor layer 11 through the contact portion 85, the semiconductor layer 81, and the conductive ion implantation layer 83.

Accordingly, power may be provided to the light emitting structure 10 by the electrode 80 and the reflective electrode 17. Accordingly, when power is applied through the electrode 80 and the reflective electrode 17, light may be provided from the light emitting structure 10.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extraction pattern may be provided on an upper surface of the light emitting structure 10. Unevenness may be provided on an upper surface of the light emitting structure 10. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

The unevenness may be formed by, for example, a PEC (Photo Electro Chemical) etching method. The width or spacing of the irregularities may be formed from 1 micrometer to 2 micrometers. When the first conductivity type semiconductor layer 11 is a GaN layer, the surface on which the unevenness is formed may be an N-face in consideration of a growth direction and an etching direction.

A protective layer may be further disposed on the side surface of the light emitting structure 10. A protective layer may be disposed on the light emitting structure 10. The protective layer may be formed of an oxide or a nitride. The protective layer is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be formed of a material having a light transmitting and insulating properties, such as AlN.

In example embodiments, the reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13, and the contact portion 85 may be electrically connected to the electrode 80. ) May be contacted. The second conductivity type semiconductor layer 13 and the semiconductor layer 81 may include the same conductivity type dopant. For example, the second conductive semiconductor layer 13 and the semiconductor layer 81 may include a p-type dopant. Accordingly, according to the embodiment, it is possible to lower the operating voltage. That is, compared to the case where the first electrode is electrically connected to the semiconductor layer including the p-type dopant and the second electrode is electrically connected to the semiconductor layer including the n-type dopant, the conventional light emitting device lowers the operating voltage by 0.1 volt or more. There are advantages to it.

In addition, according to the embodiment, the conductive ion implantation layer 83 and the second insulating layer 43 may be formed through an ion implantation process. Accordingly, in forming the second insulating layer 43 and the conductive ion implantation layer 83 in the lower portion of the light emitting structure 10, there is an advantage that the process may be simplified because mesa etching is not performed. .

Next, a method of manufacturing the light emitting device according to the embodiment will be described with reference to FIGS. 2 to 7.

2, a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13 are formed on a substrate 5 in accordance with an embodiment of the present invention. can do. The first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may be formed of at least one of, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. A buffer layer may be further formed between the first conductivity type semiconductor layer 11 and the substrate 5.

For example, the first conductivity type semiconductor layer 11 is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is formed of an n- Type semiconductor layer to which a p-type dopant is added. The first conductivity type semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11 may be implemented as a compound semiconductor. By way of example, having a compositional formula of the first conductive type semiconductor layer 11 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may be formed of a semiconductor material. The first conductivity type semiconductor layer 11 may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN and the like, and an n-type dopant such as Si, Ge, Sn, .

The active layer 12 is formed in such a manner that electrons (or holes) injected through the first conductive type semiconductor layer 11 and holes (or electrons) injected through the second conductive type semiconductor layer 13 meet with each other, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 12. [ The active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12 is formed in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, at intervals of an InGaN well layer / GaN barrier layer. Can be formed.

The second conductive semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductivity type semiconductor layer 13 may be selected from among InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN and InN. The p-type dopant such as Mg, Zn, Ca, .

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13. Thus, the light emitting structure 10 may include np, pn, npn, Or a structure thereof. The doping concentration of impurities in the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12. In addition, a second conductive type AlGaN layer may be formed between the second conductive type semiconductor layer 13 and the active layer 12.

Next, as shown in FIG. 3, a second insulating layer 43 may be formed on the second conductive semiconductor layer 13. The second insulating layer 43 may be formed by, for example, an ion implantation process. The second insulating layer 43 may be formed in a portion of the light emitting structure 10. The second insulating layer 43 may be a partial region of the first conductive semiconductor layer 11 forming the light emitting structure 10, a partial region of the active layer 12, and the second conductive semiconductor layer 13. It may be formed by ion implantation in a portion of the region. The second insulating layer 43 may be formed in a portion of the light emitting structure 10 that does not contribute to light emission. For example, the second insulating layer 43 may be formed by implanting at least one ion among H ions, O ions, Ar ions, and N ions. The second insulating layer 43 may include at least one of H, O, Ar, and N.

Subsequently, as shown in FIG. 4, an ohmic contact layer 15, a contact portion 85, a first insulating layer 40, and a reflective electrode 17 may be formed on the light emitting structure 10. A portion of the first insulating layer 40 may be in contact with the second insulating layer 43. The ohmic contact layer 15 and the contact portion 85 may be formed of the same material in one process or may be formed in different processes. The ohmic contact layer 15 and the contact portion 85 may be formed of different materials.

The ohmic contact layer 15 and the contact portion 85 may be formed of, for example, a transparent conductive oxide layer. The ohmic contact layer 15 and the contact portion 85 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), and indium zinc (IZTO). Tin Oxide), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO (IZO Nitride), ZnO, It may be formed of at least one material selected from IrOx, RuOx, NiO, Pt, Ag.

The first insulating layer 40 may electrically insulate the ohmic contact layer 15 from the contact portion 85. The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN It may be formed of a material having an insulating property.

The reflective electrode 17 may be formed of a metal material having a high reflectance. For example, the reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective electrode 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc (AZO). Transmissive conductive materials such as -Oxide, IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide) and ATO (Antimony-Tin-Oxide) It can be formed in a multi-layer. For example, the reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

And, as shown in Figure 4, the diffusion barrier layer 50 may be formed. The diffusion barrier layer 50 may be disposed on the light emitting structure 10. The diffusion barrier layer 50 may be formed on the reflective electrode 17. The diffusion barrier layer 50 may be formed around the reflective electrode 17. The diffusion barrier layer 50 may be disposed around the ohmic contact layer 15. The diffusion barrier layer 50 may be formed on the first insulating layer 40.

Next, as shown in FIG. 5, a bonding layer 60 and a support member 70 may be formed on the diffusion barrier layer 50.

 The diffusion barrier layer 50 may function to prevent the material included in the bonding layer 60 from diffusing toward the reflective electrode 17 in the process of providing the bonding layer 60. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective electrode 17. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 may support the light emitting device according to the embodiment, and may be electrically connected to an external electrode to provide power to the reflective electrode 17. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Meanwhile, the process of forming each layer described above is one example, and the process order may be variously modified.

Next, the substrate 5 is removed from the first conductivity type semiconductor layer 11. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process LLO is a process of irradiating a lower surface of the substrate 5 to peel the substrate 5 and the first conductive semiconductor layer 11 from each other.

As shown in FIG. 6, isolation etching is performed to form the light emitting structure 10. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. A portion of the diffusion barrier layer 50 may be exposed by the isolation etching. In addition, a portion of the contact portion 85 may be exposed by the isolation etching.

According to the embodiment, as shown in FIG. 6, the conductive ion implantation layer 83 may be formed in the light emitting structure 10. The conductive ion implantation layer 83 may electrically connect the contact portion 85 and the first conductivity type semiconductor layer 11. The conductive ion implantation layer 83 may be electrically connected to the contact portion 85 through the semiconductor layer 81. The conductive ion implantation layer 83 may be in contact with the first conductivity type semiconductor layer 11.

For example, the conductive ion implantation layer 83 may be formed by an ion implantation process. The conductive ion implantation layer 83 may be formed by implanting metal ions by an implantation process. The conductive ion implantation layer 83 may be formed in a portion of the light emitting structure 10. The conductive ion implantation layer 83 may be a partial region of the first conductive semiconductor layer 11 constituting the light emitting structure 10, a partial region of the active layer 12, and the second conductive semiconductor layer 13. It may be formed by ion implantation in a portion of the region. The conductive ion implantation layer 83 may be formed in a portion of the light emitting structure 10 that does not contribute to light emission. For example, the conductive ion implantation layer 83 may be formed by implanting at least one ion among Ti ions, Al ions, and Au ions. The conductive ion implantation layer 83 may include at least one of Ti, Al, Au, and the like.

Meanwhile, an electrode 80 may be disposed on the contact portion 85. The electrode 80 may be spaced apart from the side surface of the light emitting structure 10 by a predetermined distance. In addition, an insulating layer may be further disposed between the electrode 80 and the light emitting structure 10. The electrode 80 may be electrically connected to the first conductivity type semiconductor layer 11. The electrode 80 may be electrically connected to the first conductivity type semiconductor layer 11 through the contact portion 85, the semiconductor layer 81, and the conductive ion implantation layer 83.

Accordingly, power may be provided to the light emitting structure 10 by the electrode 80 and the reflective electrode 17. Accordingly, when power is applied through the electrode 80 and the reflective electrode 17, light may be provided from the light emitting structure 10.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extraction pattern may be provided on an upper surface of the light emitting structure 10. Unevenness may be provided on an upper surface of the light emitting structure 10. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

The unevenness may be formed by, for example, a PEC (Photo Electro Chemical) etching method. The width or spacing of the irregularities may be formed from 1 micrometer to 2 micrometers. When the first conductivity type semiconductor layer 11 is a GaN layer, the surface on which the unevenness is formed may be an N-face in consideration of a growth direction and an etching direction. According to the embodiment, the upper surface of the light emitting structure 10 may be formed in the N plane, the surface roughness is larger than the case where the Ga surface is formed in the light extraction efficiency can be further improved.

A protective layer may be further disposed on the side surface of the light emitting structure 10. A protective layer may be disposed on the light emitting structure 10. The protective layer may be formed of an oxide or a nitride. The protective layer is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be formed of a material having a light transmitting and insulating properties, such as AlN.

In example embodiments, the reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13, and the contact portion 85 may be electrically connected to the electrode 80. ) May be contacted. The second conductivity type semiconductor layer 13 and the semiconductor layer 81 may include the same conductivity type dopant. For example, the second conductive semiconductor layer 13 and the semiconductor layer 81 may include a p-type dopant. Accordingly, according to the embodiment, it is possible to lower the operating voltage. That is, compared to the case where the first electrode is electrically connected to the semiconductor layer including the p-type dopant and the second electrode is electrically connected to the semiconductor layer including the n-type dopant, the conventional light emitting device lowers the operating voltage by 0.1 volt or more. There are advantages to it.

In addition, according to the embodiment, the conductive ion implantation layer 83 and the second insulating layer 43 may be formed through an ion implantation process. Accordingly, in forming the second insulating layer 43 and the conductive ion implantation layer 83 in the lower portion of the light emitting structure 10, there is an advantage that the process may be simplified because mesa etching is not performed. .

According to an embodiment, as illustrated in FIG. 7, the semiconductor layer 81 and the second conductive semiconductor layer 13 may be insulated by the second insulating layer 43. The second insulating layer 43 may be implemented to surround a portion of the semiconductor layer 81. Meanwhile, the structure of electrically insulating the semiconductor layer 81 and the second conductive semiconductor layer 13 may be variously modified.

In addition, the process of forming the second insulating layer 43 is described with reference to FIG. 2, and the process of forming the conductive ion implantation layer 83 has been described with reference to FIG. 6. The conductive ion implantation layer 83 may be formed in a continuous process. That is, the second insulating layer 43 and the conductive ion implantation layer 83 may be implemented in the process step described with reference to FIG. 2, or may be implemented in the process step described with reference to FIG. 6. In addition, the conductive ion implantation layer 83 may be implemented such that metal diffusion may proceed through heat treatment after a metal ion implantation process is performed.

8 and 9 are views showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIGS. 8 and 9, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

In the light emitting device according to the embodiment, as illustrated in FIGS. 8 and 9, the second insulating layer 43 may electrically insulate the second conductive semiconductor layer 13 from the semiconductor layer 81. The second insulating layer 43 may be disposed to surround the second conductive semiconductor layer 13 which contributes to light emission. In addition, the second insulating layer 43 may be disposed to surround the active layer 12 where light is actually emitted.

The first insulating layer 40 may be disposed around the reflective electrode 17. The first insulating layer 40 may be disposed around the ohmic contact layer 15. The semiconductor layer 81 may be disposed on the first insulating layer 40. A conductive ion implantation layer 83 may be disposed on the semiconductor layer 81.

In example embodiments, the reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13, and the contact portion 85 may be electrically connected to the electrode 80. ) May be contacted. The second conductivity type semiconductor layer 13 and the semiconductor layer 81 may include the same conductivity type dopant. For example, the second conductive semiconductor layer 13 and the semiconductor layer 81 may include a p-type dopant. Accordingly, according to the embodiment, it is possible to lower the operating voltage. That is, compared to the case where the first electrode is electrically connected to the semiconductor layer including the p-type dopant and the second electrode is electrically connected to the semiconductor layer including the n-type dopant, the conventional light emitting device lowers the operating voltage by 0.1 volt or more. There are advantages to it.

In addition, according to the embodiment, the conductive ion implantation layer 83 and the second insulating layer 43 may be formed through an ion implantation process. Accordingly, in forming the second insulating layer 43 and the conductive ion implantation layer 83 in the lower portion of the light emitting structure 10, there is an advantage that the process may be simplified because mesa etching is not performed. .

10 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 10, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

In the light emitting device according to the embodiment, as shown in FIG. 10, the second insulating layer 43 may be disposed on both side surfaces of the conductive ion implantation layer 83. Some regions of the conductive ion implantation layer 83 may be disposed in the first conductive semiconductor layer 11. The conductive ion implantation layer 83 may be in contact with the contact portion 85.

According to an embodiment, the reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13, and the contact portion 85 electrically connected to the electrode 80 may be connected to the conductive ion implantation layer 83. Can be contacted.

In addition, according to the embodiment, the conductive ion implantation layer 83 and the second insulating layer 43 may be formed through an ion implantation process. Accordingly, in forming the second insulating layer 43 and the conductive ion implantation layer 83 in the lower portion of the light emitting structure 10, there is an advantage that the process may be simplified because mesa etching is not performed. .

11 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 11, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

According to the light emitting device according to the embodiment, the ohmic reflective electrode 19 may be disposed under the light emitting structure 10. The ohmic reflective electrode 19 may be implemented to perform both the reflective electrode 17 and the ohmic contact layer 15 described with reference to FIG. 1. Accordingly, the ohmic reflective electrode 19 may be in ohmic contact with the second conductivity-type semiconductor layer 13 and perform a function of reflecting light incident from the light emitting structure 10.

12 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 12, a description of portions overlapping with those described with reference to FIG. 8 will be omitted.

According to the light emitting device according to the embodiment, the ohmic reflective electrode 19 may be disposed under the light emitting structure 10. The ohmic reflective electrode 19 may be implemented to perform both the reflective electrode 17 and the ohmic contact layer 15 described with reference to FIG. 8. Accordingly, the ohmic reflective electrode 19 may be in ohmic contact with the second conductivity-type semiconductor layer 13 and perform a function of reflecting light incident from the light emitting structure 10.

13 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 13, a description of portions overlapping with those described with reference to FIG. 10 will be omitted.

According to the light emitting device according to the embodiment, the ohmic reflective electrode 19 may be disposed under the light emitting structure 10. The ohmic reflective electrode 19 may be implemented to perform both the reflective electrode 17 and the ohmic contact layer 15 described with reference to FIG. 10. Accordingly, the ohmic reflective electrode 19 may be in ohmic contact with the second conductivity-type semiconductor layer 13 and perform a function of reflecting light incident from the light emitting structure 10.

FIG. 14 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

Referring to FIG. 14, the light emitting device package according to the embodiment may include a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. Include.

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other to provide power to the light emitting device 100. The first lead electrode 131 and the second lead electrode 132 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and the heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 120 or may be disposed on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by a wire, flip chip or die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment can be applied to a light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device shown in FIGS. 15 and 16 and the lighting device shown in FIG. 17.

Referring to FIG. 15, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arrayed on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 200 may be mounted such that the light emitting surface of the light emitting device package 200 is spaced apart from the light guiding plate 1041 by a predetermined distance, but the present invention is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

16 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 16, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

17 is a perspective view of a lighting apparatus according to the embodiment.

Referring to FIG. 17, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment provided on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

According to the embodiment, the light emitting device may be packaged and mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to be implemented as a light emitting module.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: light emitting structure 11: first conductive semiconductor layer
12: active layer 13: second conductive semiconductor layer
15: ohmic contact layer 17: reflective electrode
40: first insulating layer 43: second insulating layer
50: diffusion barrier layer 60: bonding layer
70: support member 80: electrode
81: semiconductor layer 83: conductive ion implantation layer
85: contact part

Claims (15)

A light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;
A reflective electrode disposed under the first region of the light emitting structure;
A contact portion disposed under the second region of the light emitting structure;
A conductive ion implantation layer electrically connecting the contact portion and the first conductivity type semiconductor layer;
An electrode disposed on the contact portion;
. The method of claim 1,
Light emitting device comprising an insulating layer for electrically insulating the conductive ion implantation layer and the active layer. The method of claim 2,
The insulating layer is an insulating ion implantation layer. The method of claim 1,
And an insulating layer electrically insulating the conductive ion implantation layer and the second conductive semiconductor layer. 5. The method of claim 4,
The insulating layer is an insulating ion implantation layer. The method of claim 1,
The conductive ion implantation layer is in contact with the first conductivity type semiconductor layer. The method of claim 1,
The conductive ion implantation layer is in contact with the contact portion. The method of claim 1,
A portion of the conductive ion implantation layer is disposed inside the first conductivity type semiconductor layer. The method of claim 1,
The conductive ion implantation layer comprises at least one material selected from Ti, Al, Au. The method of claim 1,
And an ohmic contact layer disposed between the reflective electrode and the second conductive semiconductor layer. The method of claim 1,
A light emitting device comprising irregularities provided on an upper surface of the first conductive semiconductor layer. The method of claim 1,
The light emitting device further comprises an insulating layer disposed between the contact portion and the reflective electrode. The method of claim 1,
The electrode is a light emitting device arranged to be spaced apart from the side of the light emitting structure by a predetermined distance. Body;
A light emitting element according to any one of claims 1 to 13 arranged on the body;
A first lead electrode and a second lead electrode electrically connected to the light emitting device;
Emitting device package. Board;
A light emitting element according to any one of claims 1 to 13 arranged on the substrate;
An optical member through which light provided from the light emitting device passes;
Light unit comprising a.

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