KR102075151B1 - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

Embodiments include a support member; A light emitting structure on the support member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; An ohmic contact layer disposed between the light emitting structure and the support member; A channel layer disposed around the ohmic contact layer between the light emitting structure and the support member; An insulating ion implantation layer extending from a bottom surface of the light emitting structure to a portion of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; And an electrode layer disposed between the ohmic contact layer and the support member, wherein the horizontal width of the upper surface of the support member is greater than the horizontal width of the bottom surface of the light emitting structure, and the active layer is inside the insulating ion implantation layer. A center region disposed in the outer region and an outer region disposed outside the insulating ion implantation layer, wherein the channel layer extends from the bottom of the outer region to the outside of the light emitting structure, and the ohmic contact layer includes the insulating ion implantation layer. A bottom surface of the light emitting structure positioned between the layers, wherein the electrode layer extends from the bottom of the ohmic contact layer onto the bottom of the channel layer, and the light emitting structure has a top surface having roughness and a bottom surface of the light emitting structure. It includes a side inclined with respect to the upper surface of the support member between, the insulating ion implantation layer is the mirror Continuously disposed along the lateral side to form a closed loop, wherein the insulating ion implantation layer is disposed inside the inclined side, and includes a light emitting element vertically overlapping the top surface of the light emitting structure having the roughness; Can be.

Description

Light-Emitting Device, Light-Emitting Package and Light Unit {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

The embodiment provides a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells electrically secured and electrically connected.

Embodiments include a support member; A light emitting structure on the support member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; An ohmic contact layer disposed between the light emitting structure and the support member; A channel layer disposed around the ohmic contact layer between the light emitting structure and the support member; An insulating ion implantation layer extending from a bottom surface of the light emitting structure to a portion of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; And an electrode layer disposed between the ohmic contact layer and the support member, wherein the horizontal width of the upper surface of the support member is greater than the horizontal width of the bottom surface of the light emitting structure, and the active layer is inside the insulating ion implantation layer. A center region disposed in the outer region and an outer region disposed outside the insulating ion implantation layer, wherein the channel layer extends from the bottom of the outer region to the outside of the light emitting structure, and the ohmic contact layer includes the insulating ion implantation layer. A bottom surface of the light emitting structure positioned between the layers, wherein the electrode layer extends from the bottom of the ohmic contact layer onto the bottom of the channel layer, and the light emitting structure has a top surface having roughness and a bottom surface of the light emitting structure. A sidewall inclined with respect to the upper surface of the support member, wherein the insulating ion implantation layer is It is disposed continuously along the photographic side to form a closed loop, the insulating ion implantation layer is disposed inside the inclined side, and includes a light emitting element vertically overlapping the upper surface of the light emitting structure having the roughness Can be.

An embodiment is a package body; First and second electrodes spaced apart from each other on an upper surface of the package body; First and second bonding pads electrically connected to the first and second electrodes, respectively, and spaced apart from each other on a bottom surface of the package body; A support member disposed on the first electrode and electrically connected to the first electrode; A light emitting structure on the support member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; An ohmic contact layer disposed between the light emitting structure and the support member; A channel layer disposed around the ohmic contact layer between the light emitting structure and the support member; An insulating ion implantation layer extending from a bottom surface of the light emitting structure to a portion of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; And an electrode layer disposed between the ohmic contact layer and the support member, wherein the horizontal width of the upper surface of the support member is greater than the horizontal width of the bottom surface of the light emitting structure, and the active layer is inside the insulating ion implantation layer. A center region disposed in the outer region and an outer region disposed outside the insulating ion implantation layer, wherein the channel layer extends from the bottom of the outer region to the outside of the light emitting structure, and the ohmic contact layer includes the insulating ion implantation layer. A bottom surface of the light emitting structure positioned between the layers, wherein the electrode layer extends from the bottom of the ohmic contact layer onto the bottom of the channel layer, and the light emitting structure has a top surface having roughness and a bottom surface of the light emitting structure. A sidewall inclined with respect to the upper surface of the support member, wherein the insulating ion implantation layer is inclined Disposed on an inner side of a photographic side, and vertically overlapping with an upper surface having the roughness, wherein the insulating ion implantation layer is continuously disposed along the inclined side to form a closed loop, and the light emitting structure is formed on the second electrode It may include a light emitting device package including a wire electrically connected to the.

The light emitting device, the light emitting device package, and the light unit according to the embodiment may provide a plurality of light emitting cells electrically secured and electrically connected.

1 is a view showing a light emitting device according to an embodiment.
2 to 7 illustrate a method of manufacturing a light emitting device according to the embodiment.
8 is a view showing a modification of the light emitting device according to the embodiment.
9 is a view showing a light emitting device package according to an embodiment.
10 is a diagram illustrating a display device according to an exemplary embodiment.
11 is a diagram illustrating another example of a display device according to an exemplary embodiment.
12 is a view showing a lighting apparatus according to an embodiment.

In the description of an embodiment, each layer, region, pattern, or structure may be “under” or “under” the substrate, each layer, region, pad, or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer may be exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view showing a light emitting device according to an embodiment.

As shown in FIG. 1, the light emitting device according to the embodiment may include a first light emitting structure 10, a second light emitting structure 20, a third light emitting structure 30, a first reflective electrode 17, and a second light emitting device. The reflective electrode 27 and the third reflective electrode 37 may be included. 1 illustrates a case where three light emitting structures are disposed, the light emitting device according to the embodiment may include two light emitting structures and may also include four or more light emitting structures. The plurality of light emitting structures may be electrically connected to each other. For example, the plurality of light emitting structures may be electrically connected in series. The plurality of light emitting structures may be disposed on the support substrate 70.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed under the first semiconductor layer 11 of the first conductivity type, and the second semiconductor layer 13 of the second conductivity type may be below the first active layer 12. Can be placed in.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer to which an n-type dopant is added as the first conductivity type dopant, and the second semiconductor layer 13 of the second conductivity type. The second conductive dopant may be formed of a p-type semiconductor layer to which a p-type dopant is added. In addition, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. The first semiconductor layer 11 of the first conductivity type may be implemented as a compound semiconductor. The first semiconductor layer 11 of the first conductivity type may be implemented as, for example, a group II-VI or group III-V compound semiconductor.

For example, the first semiconductor layer 11 of the first conductivity type has a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It can be implemented with a semiconductor material. The first conductivity type first semiconductor layer 11 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Sn, Se, Te, and the like may be doped.

The first active layer 12 is electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and holes injected through the second semiconductor layer 13 of the second conductivity type ( Or electrons) meet each other and emit light due to a band gap difference of an energy band according to a material of forming the first active layer 12. The first active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The first active layer 12 may be implemented with a compound semiconductor. The first active layer 12 may be implemented as, for example, a Group II-VI or Group III-V compound semiconductor. The first active layer 12 may be, for example, In _x Al _y Ga _1-xy N (0). It can be implemented with a semiconductor material having a composition formula of ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1). When the first active layer 12 is implemented as the multi-well structure, the first active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers. For example, an InGaN well layer / It can be implemented in the cycle of the GaN barrier layer.

The second semiconductor layer 13 of the second conductivity type may be implemented with, for example, a p-type semiconductor layer. The second semiconductor layer 13 of the second conductivity type may be implemented as a compound semiconductor. For example, the second semiconductor layer 13 of the second conductivity type may be implemented as a group II-VI or group III-V compound semiconductor.

For example, the second semiconductor layer 13 of the second conductivity type may have a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It can be implemented with a semiconductor material having. The second conductive second semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. P-type dopants such as, Ca, Sr, and Ba may be doped.

The first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be uniformly or non-uniformly formed. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type first semiconductor layer 11 and the first active layer 12. In addition, a second conductive AlGaN layer may be formed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed below the third semiconductor layer 21 of the first conductivity type, and the fourth semiconductor layer 23 of the second conductivity type may be below the second active layer 22. Can be placed in. The second light emitting structure 20 may be similarly formed based on the first light emitting structure 10 described above.

In addition, the third light emitting structure 30 may include a fifth semiconductor layer 31 of a first conductivity type, a third active layer 32, and a sixth semiconductor layer 33 of a second conductivity type. The third active layer 32 may be disposed between the fifth semiconductor layer 31 of the first conductivity type and the sixth semiconductor layer 33 of the second conductivity type. The third active layer 32 may be disposed under the fifth semiconductor layer 31 of the first conductivity type, and the sixth semiconductor layer 33 of the second conductivity type may be below the third active layer 32. Can be placed in. The third light emitting structure 30 may be similarly formed based on the first light emitting structure 10 described above.

The first ohmic contact layer 15 and the first reflective electrode 17 may be disposed under the first light emitting structure 10. The first channel layer 16 may be disposed under the first light emitting structure 10 and around the first ohmic contact layer 15.

The first channel layer 16 may be formed of, for example, a material having electrical insulation. The first channel layer 16 may be formed of, for example, oxide or nitride. For example, the first channel layer 16 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The first channel layer 16 may also be referred to as an isolation layer.

The first metal layer 19 may be disposed under the first light emitting structure 10 and around the first reflective electrode 17. The first metal layer 19 may be disposed around the first ohmic contact layer 15 and below the first reflective electrode 17.

The first ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO) or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The first reflective electrode 17 may be formed of a metal material having a high reflectance. For example, the first reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the first reflecting electrode 17 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Light-transmitting materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in the embodiment, the first reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The first ohmic contact layer 15 may be formed to be in ohmic contact with the first light emitting structure 10. In addition, the first reflective electrode 17 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the first light emitting structure 10. The first metal layer 19 may include at least one of Cu, Ni, Ti, Cr, W, Pt, V, Fe, and Mo materials.

In addition, a second ohmic contact layer 25 and the second reflective electrode 27 may be disposed under the second light emitting structure 20. The second channel layer 26 may be disposed under the second light emitting structure 20 and around the second ohmic contact layer 25.

The second channel layer 26 may be formed of, for example, a material having electrical insulation. The second channel layer 26 may be formed of, for example, oxide or nitride. For example, the second channel layer 26 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The second channel layer 26 may also be referred to as an isolation layer.

The second metal layer 29 may be disposed under the second light emitting structure 20 and around the second reflective electrode 27. The second metal layer 29 may be disposed around the second ohmic contact layer 25 and below the second reflective electrode 27.

The second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The second ohmic contact layer 25 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The second reflecting electrode 27 may be formed of a metal material having a high reflectance. For example, the second reflective electrode 27 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the third reflecting electrode 37 may be formed of the metal or the alloy and Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Light-transmitting materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in the embodiment, the second reflecting electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The second ohmic contact layer 25 may be formed to be in ohmic contact with the second light emitting structure 20. In addition, the second reflective electrode 27 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the second light emitting structure 20. The second metal layer 29 may include at least one of Cu, Ni, Ti, Cr, W, Pt, V, Fe, and Mo materials.

In addition, a third ohmic contact layer 35 and the third reflective electrode 37 may be disposed under the third light emitting structure 30. A third channel layer 36 may be disposed under the third light emitting structure 30 and around the third ohmic contact layer 35.

The third channel layer 36 may be formed of, for example, a material having electrical insulation. The third channel layer 36 may be formed of, for example, oxide or nitride. For example, the third channel layer 36 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The third channel layer 36 may be referred to as an isolation layer.

A third metal layer 39 may be disposed under the third light emitting structure 30 and around the third reflective electrode 37. The third metal layer 39 may be disposed around the third ohmic contact layer 35 and below the third reflective electrode 37.

The third ohmic contact layer 35 may be formed of, for example, a transparent conductive oxide layer. For example, the third ohmic contact layer 35 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The third reflective electrode 37 may be formed of a metal material having a high reflectance. For example, the third reflective electrode 37 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the third reflecting electrode 37 may be formed of the metal or the alloy and Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Light-transmitting materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in the embodiment, the third reflective electrode 37 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The third ohmic contact layer 35 may be formed to be in ohmic contact with the third light emitting structure 30. In addition, the third reflective electrode 37 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the third light emitting structure 30. The third metal layer 39 may include at least one of Cu, Ni, Ti, Cr, W, Pt, V, Fe, and Mo materials.

The first contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The first contact portion 43 may electrically connect the first semiconductor layer 11 of the first conductivity type to the second reflective electrode 27. The first contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with a first region outside the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with an upper surface of the first semiconductor layer 11. The first contact portion 43 may be in contact with a side surface of the first semiconductor layer 11.

The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. The first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. For example, the first contact portion 43 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The first contact portion 43 may be in contact with an upper portion of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face (N face) of the first semiconductor layer 11 of the first conductivity type.

According to the embodiment, it may include a first insulating ion implantation layer 81 disposed in the first light emitting structure (10). The first insulating ion implantation layer 81 may electrically insulate the central region of the second semiconductor layer 13 from the outer region of the second semiconductor layer 13. In addition, the first insulating ion implantation layer 81 may be disposed in the first active layer 12. As illustrated in FIG. 7, the first insulating ion implantation layer 81 may electrically insulate the center region and the outer region 12b of the first active layer 12. The first insulating ion implantation layer 81 may be disposed to surround the first active layer 12 where light is actually emitted. A portion of the first insulating ion implantation layer 81 may be disposed in the first semiconductor layer 11. A portion of the first insulating ion implantation layer 81 may be in contact with the inside of the first semiconductor layer 11.

Accordingly, according to an embodiment, the first contact portion 43 may be in contact with the side surface of the first semiconductor layer 11. The center region and the outer region of the first active layer 12 may be electrically insulated by the first insulating ion implantation layer 81. Therefore, according to the embodiment, there is an advantage of not having to form a separate insulation layer for electrical insulation between the first light emitting structure 10 and the first contact portion 43.

The first insulating ion implantation layer 81 may be provided by, for example, an ion implantation process. The first insulating ion implantation layer 81 may be disposed inside the first ohmic contact layer 15. For example, the first insulating ion implantation layer 81 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the first insulating ion implantation layer 81 may be implanted with energy of, for example, 10 KeV to 100 KeV. The first insulating ion implantation layer 81 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the first light emitting structure 10.

A second contact portion 53 may be disposed between the second light emitting structure 20 and the third light emitting structure 30. The second contact portion 53 may electrically connect the third semiconductor layer 21 of the first conductivity type to the third reflective electrode 37. The second contact portion 53 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with a first region outside the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may contact the upper surface of the third semiconductor layer 21. The second contact portion 53 may be in contact with a side surface of the third semiconductor layer 21.

The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type. The third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The second contact portion 53 may be in contact with an upper portion of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may be implemented including a GaN layer. In this case, when the growth direction and the etching direction of the semiconductor layer are considered, the second contact portion 53 may contact the N face of the third semiconductor layer 21 of the first conductivity type.

According to the embodiment, it may include a second insulating ion implantation layer 83 disposed inside the second light emitting structure 20. The second insulating ion implantation layer 83 may electrically insulate the central region of the fourth semiconductor layer 23 from the outer region of the fourth semiconductor layer 23. In addition, the second insulating ion implantation layer 83 may be disposed in the second active layer 22. The second insulating ion implantation layer 83 may electrically insulate the center region and the outer region of the second active layer 22. The second insulating ion implantation layer 83 may be disposed to surround the second active layer 22 where light is actually emitted. A portion of the second insulating ion implanted layer 83 may be disposed in the third semiconductor layer 21. A portion of the second insulating ion implanted layer 83 may contact the inside of the third semiconductor layer 21.

Accordingly, according to the embodiment, the second contact portion 43 may be in contact with the side surface of the third semiconductor layer 21. The center region and the outer region of the second active layer 22 may be electrically insulated by the second insulating ion implantation layer 83. Therefore, according to the embodiment, there is an advantage that a separate insulating layer for electrical insulation is not required between the second light emitting structure 20 and the second contact portion 53.

The second insulating ion implantation layer 83 may be provided by, for example, an ion implantation process. The second insulating ion implantation layer 83 may be disposed in the second ohmic contact layer 25. For example, the second insulating ion implantation layer 83 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the second insulating ion implantation layer 83 may be implanted with energy of, for example, 10 KeV to 100 KeV. The second insulating ion implantation layer 83 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the second light emitting structure 20.

According to the embodiment, it may include a third insulating ion implantation layer 85 disposed inside the third light emitting structure (30). The third insulating ion implantation layer 85 may electrically insulate the central region of the sixth semiconductor layer 33 from the outer region of the sixth semiconductor layer 33. In addition, the third insulating ion implantation layer 85 may be disposed in the third active layer 32. The third insulating ion implanted layer 85 may electrically insulate the center region and the outer region of the third active layer 32. The third insulating ion implanted layer 85 may be disposed to surround the third active layer 32 where light is actually emitted. A portion of the third insulating ion implanted layer 85 may be disposed in the fifth semiconductor layer 31. A portion of the third insulating ion implanted layer 85 may contact the inside of the fifth semiconductor layer 31.

The third insulating ion implantation layer 85 may be provided by, for example, an ion implantation process. The third insulating ion implantation layer 85 may be disposed inside the third ohmic contact layer 35. For example, the third insulating ion implantation layer 85 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the third insulating ion implantation layer 85 may be implanted with energy of, for example, 10 KeV to 100 KeV. The third insulating ion implantation layer 85 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the third light emitting structure 30.

An insulating layer 40 may be disposed under the second metal layer 29 and the third metal layer 39. The insulating layer 40 may be formed of oxide or nitride. The insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The insulating layer 40 may be made of an insulating material such as TiO ₂ , AlN. The insulating layer 40 insulates the second metal layer 29 from the third metal layer 39.

A diffusion barrier layer 50, a bonding layer 60, and a support member 70 may be disposed under the first metal layer 19 and the insulating layer 40.

In the diffusion barrier layer 50, a material included in the bonding layer 60 may be formed in the process of providing the bonding layer 60 with the first reflective electrode 17, the second reflective electrode 27, and the first reflective layer 60. A function of preventing diffusion in the direction of the three reflective electrodes 37 may be performed. In the diffusion barrier layer 50, a material such as tin (Sn) included in the bonding layer 60 may be formed of the first reflective electrode 17, the second reflective electrode 27, and the third reflective electrode 37. ), Etc. can be prevented. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, and Mo material.

The bonding layer 60 may include a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include. The support member 70 may support the light emitting device according to the embodiment and perform a heat radiation function. The bonding layer 60 may be implemented as a seed layer.

The support member 70 may be formed of, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

In example embodiments, the first light emitting structure 10, the second light emitting structure 20, and the first light emitting structure 10 may be disposed on the first reflective electrode 17 and the electrode 80 disposed on the fifth semiconductor layer 31. Power may be applied to the third light emitting structure 30. The first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 may be electrically connected in series. Accordingly, when power is applied through the first reflective electrode 17 and the electrode 80, the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30 are separated from each other. Light can be provided.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be implemented with a material selected from Ni, Cu, Al, and the like. The top layer may comprise Au, for example.

A light extraction pattern may be provided on an upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. An uneven pattern may be provided on an upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. Accordingly, according to the embodiment, it is possible to increase the external light extraction effect.

The light emitting device according to the embodiment may include a plurality of light emitting cells. Each of the light emitting cells may include a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. The plurality of light emitting cells may include a reflective electrode under the second conductive semiconductor layer.

The display device may further include a contact unit electrically connecting the first conductive semiconductor layer of the first light emitting cell to the reflective electrode of the second light emitting cell adjacent to the first light emitting cell among the plurality of light emitting cells. The contact part may be in contact with a first region outside the first conductivity-type semiconductor layer of the first light emitting cell.

The display device may further include an insulating ion implantation layer disposed inside the first light emitting cell to electrically insulate the center region and the outer region of the second conductive semiconductor layer of the first light emitting cell. The contact portion may contact the top and side surfaces of the first conductivity type semiconductor layer of the first light emitting cell. The insulating ion implantation layer may be disposed inside the active layer of the first light emitting cell to electrically insulate the center area and the outer area of the first light emitting cell active layer. The contact part may contact an outer region of the first light emitting cell active layer. The insulating ion implantation layer may be formed by implanting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions.

Next, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 2 to 7.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 2, the first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a are formed on the substrate 5. do. The first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a may be defined as a light emitting structure 10a.

For example, the substrate 5 may be formed of at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer may be further formed between the first semiconductor layer 11 of the first conductivity type and the substrate 5.

For example, the first conductivity type semiconductor layer 11a is formed of an n type semiconductor layer to which an n type dopant is added as the first conductivity type dopant, and the second conductivity type semiconductor layer 13a is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductivity type semiconductor layer 11a may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may be formed of an n-type semiconductor layer.

The first conductivity-type semiconductor layer 11a may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11a may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be. The first conductive semiconductor layer 11a may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and doped with an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. Can be.

In the active layer 12a, electrons (or holes) injected through the first conductive semiconductor layer 11a and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. The layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12a may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12a may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the active layer 12a is formed of the multi quantum well structure, the active layer 12a may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. It can be formed in a cycle.

The second conductive semiconductor layer 13a may be implemented with, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13a may be formed of a semiconductor material having a compositional formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be. The second conductive semiconductor layer 13a may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.

Meanwhile, the first conductive semiconductor layer 11a may include a p-type semiconductor layer, and the second conductive semiconductor layer 13a may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive semiconductor layer 13a. Accordingly, the light emitting structure 10a may be np, pn, npn, or pnp junctions. It may have at least one of the structures. In addition, the doping concentrations of the impurities in the first conductivity type semiconductor layer 11a and the second conductivity type semiconductor layer 13a may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10a may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11a and the active layer 12a. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13a and the active layer 12a.

Next, as shown in FIG. 3, channel layers 16, 26, and 36 are formed on the second conductive semiconductor layer 13a. The channel layers 16, 26, and 36 may be formed of an insulating material. The channel layers 16, 26, 36 may be formed of, for example, oxides or nitrides.

Next, as shown in FIG. 3, the first ohmic contact layer 15, the second ohmic contact layer 25, and the third ohmic contact layer 35 may be formed. The first ohmic contact layer 15, the second ohmic contact layer 25, and the third ohmic contact layer 35 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15, the second ohmic contact layer 25, and the third ohmic contact layer 35 are, for example, indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum zinc (AZO). Oxide), Aluminum Gallium Zinc Oxide (AGZO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (AZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), It may be formed of at least one material selected from gallium zinc oxide (GZO), IZO nitride (IZON), ZnO, IrOx, RuOx, NiO, Pt, Ag.

3, the first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 may be formed. The first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 may be provided by, for example, an ion implantation process.

The first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 may form the second conductive semiconductor layer 13a and the active layer 12a. It may be formed through. In addition, the first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 may be formed in a portion of the first conductivity type semiconductor layer 11a. Can be. The first insulating ion implantation layer 81 may be formed in the first ohmic contact layer 15. The second insulating ion implantation layer 83 may be formed in the second ohmic contact layer 25. The third insulating ion implantation layer 85 may be formed inside the third ohmic contact layer 35. The first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 are, for example, nitrogen (N) ions, oxygen (O) ions, and argon (Ar). ) And at least one of hydrogen (H) ions may be injected and provided. In addition, the first insulating ion implantation layer 81, the second insulating ion implantation layer 83, and the third insulating ion implantation layer 85 may be implanted with energy of, for example, 10 KeV to 100 KeV.

Subsequently, as shown in FIG. 4, the first reflective electrode 17 is formed on the first region of the second conductivity-type semiconductor layer 13a. In addition, a second reflective electrode 27 is formed on the second region of the second conductive semiconductor layer 13a, and a third reflective electrode 37 is formed on the third region of the second conductive semiconductor layer 13a. Is formed.

The first reflecting electrode 17, the second reflecting electrode 27, and the third reflecting electrode 37 may be formed of a metal material having a high reflectance. For example, the first reflection electrode 17, the second reflection electrode 27, and the third reflection electrode 37 may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, It may be formed of a metal or an alloy containing at least one of Au and Hf. In addition, the first reflection electrode 17, the second reflection electrode 27, and the third reflection electrode 37 may be formed of the metal or the alloy, indium tin oxide (ITO), or indium zinc oxide (IZO). ), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum- It may be formed in multiple layers using a light transmissive conductive material such as Zinc-Oxide) or ATO (Antimony-Tin-Oxide). For example, in the exemplary embodiment, the first reflective electrode 17, the second reflective electrode 27, and the third reflective electrode 37 may be formed of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu. It may include at least one of the alloys.

In addition, as shown in FIG. 4, a first metal layer 19 is formed on the first reflective electrode 17, a second metal layer 29 is formed on the second reflective electrode 27, and the second The third metal layer 39 is formed on the third reflective electrode 37.

Subsequently, as shown in FIG. 5, the insulating layer 40 is formed on the second metal layer 29 and the third metal layer 39.

Meanwhile, the forming process of each layer described above is one example, and the order of the processes may be variously modified.

Next, as shown in FIG. 5, a diffusion barrier layer 50, a bonding layer 60, and a support member 70 are formed on the first metal layer 19 and the insulating layer 40.

In the diffusion barrier layer 50, a material included in the bonding layer 60 may be formed in the process of providing the bonding layer 60 with the first reflective electrode 17, the second reflective electrode 27, and the first reflective layer 60. A function of preventing diffusion in the direction of the three reflective electrodes 37 may be performed. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. . The support member 70 may support the light emitting device according to the embodiment.

The support member 70 may be formed of, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Next, the substrate 5 is removed from the first conductivity type semiconductor layer 11a. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process LLO is a process of irradiating a lower surface of the substrate 5 to peel the substrate 5 and the first conductive semiconductor layer 11a from each other.

As shown in FIG. 6, isolation etching is performed to separate the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. The isolation etching may be performed by dry etching such as, for example, an inductively coupled plasma (ICP), but is not limited thereto. Partial regions of the first channel layer 16, the second channel layer 26, and the third channel layer 36 may be exposed by the isolation etching.

In example embodiments, a light extraction pattern may be provided on an upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. An uneven pattern may be provided on an upper surface of the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. Accordingly, according to the embodiment, it is possible to increase the external light extraction effect. According to the embodiment, the upper surface of the first light emitting structure 10, the second light emitting structure 20, the third light emitting structure 30 may be formed in the N plane, when the Ga surface Compared with the surface roughness, the light extraction efficiency can be further improved.

Next, as shown in FIG. 6, the first contact portion 43 and the second contact portion 53 may be formed. The first contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. A second contact portion 53 may be disposed between the second light emitting structure 20 and the third light emitting structure 30.

The first contact portion 43 may electrically connect the first semiconductor layer 11 of the first conductivity type to the second reflective electrode 27. The first contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with a first region outside the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with an upper surface of the first semiconductor layer 11. The first contact portion 43 may be in contact with a side surface of the first semiconductor layer 11.

The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. The first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. For example, the first contact portion 43 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The first contact portion 43 may be in contact with an upper portion of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face (N face) of the first semiconductor layer 11 of the first conductivity type.

The second contact portion 53 may electrically connect the third semiconductor layer 21 of the first conductivity type to the third reflective electrode 37. The second contact portion 53 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with a first region outside the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may contact the upper surface of the third semiconductor layer 21. The second contact portion 53 may be in contact with a side surface of the third semiconductor layer 21.

The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type. The third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The second contact portion 53 may be in contact with an upper portion of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may be implemented including a GaN layer. In this case, when the growth direction and the etching direction of the semiconductor layer are considered, the second contact portion 53 may contact the N face of the third semiconductor layer 21 of the first conductivity type.

In addition, as illustrated in FIG. 6, an electrode 80 may be formed on the fifth semiconductor layer 31 of the first conductivity type. The electrode 80 may be electrically connected to the fifth semiconductor layer 31 of the first conductivity type.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be implemented with a material selected from Ni, Cu, Al, and the like. The top layer may comprise Au, for example.

According to the embodiment, the light emitting structures adjacent to each other may be electrically connected in series through the first contact portion 43 and the second contact portion 53. In addition, according to an embodiment, the connection line 90 and the pad unit 80 may be electrically connected to an external terminal through wire bonding.

In example embodiments, the insulating layer 40 may be formed under the second metal layer 29 and the third metal layer 39. Accordingly, the insulating layer 40 can stably support the first light emitting structure 10, the second light emitting structure 20, and the third light emitting structure 30. Accordingly, according to the embodiment, it is possible to improve the electrical reliability of the light emitting device.

8 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment shown in FIG. 8, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

According to the embodiment, the first insulating ion implantation layer 81 and the second insulating ion implantation layer 83. After the third insulating ion implantation layer 85 is formed, the first ohmic contact layer 15, the second ohmic contact layer 25, and the third ohmic contact layer 35 may be formed.

The first contact portion 43 may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The first contact portion 43 may electrically connect the first semiconductor layer 11 of the first conductivity type to the second reflective electrode 27. The first contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with a first region outside the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with an upper surface of the first semiconductor layer 11. The first contact portion 43 may be in contact with a side surface of the first semiconductor layer 11.

The first contact portion 43 may be in contact with the second metal layer 29. The first contact portion 43 may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type. The first semiconductor layer 11 of the first conductivity type may be electrically connected to the fourth semiconductor layer 23 of the second conductivity type through the first contact portion 43.

The first contact portion 43 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. For example, the first contact portion 43 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The first contact portion 43 may be in contact with an upper portion of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face (N face) of the first semiconductor layer 11 of the first conductivity type.

According to the embodiment, it may include a first insulating ion implantation layer 81 disposed in the first light emitting structure (10). The first insulating ion implantation layer 81 may electrically insulate the central region of the second semiconductor layer 13 from the outer region of the second semiconductor layer 13. In addition, the first insulating ion implantation layer 81 may be disposed in the first active layer 12. As illustrated in FIG. 7, the first insulating ion implantation layer 81 may electrically insulate the center region and the outer region 12b of the first active layer 12. The first insulating ion implantation layer 81 may be disposed to surround the first active layer 12 where light is actually emitted.

Accordingly, according to an embodiment, the first contact portion 43 may be in contact with the side surface of the first semiconductor layer 11. The center region and the outer region of the first active layer 12 may be electrically insulated by the first insulating ion implantation layer 81. Therefore, according to the embodiment, there is an advantage of not having to form a separate insulation layer for electrical insulation between the first light emitting structure 10 and the first contact portion 43.

The first insulating ion implantation layer 81 may be provided by, for example, an ion implantation process. For example, the first insulating ion implantation layer 81 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the first insulating ion implantation layer 81 may be implanted with energy of, for example, 10 KeV to 100 KeV. The first insulating ion implantation layer 81 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the first light emitting structure 10.

A second contact portion 53 may be disposed between the second light emitting structure 20 and the third light emitting structure 30. The second contact portion 53 may electrically connect the third semiconductor layer 21 of the first conductivity type to the third reflective electrode 37. The second contact portion 53 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may be in contact with a first region outside the third semiconductor layer 21 of the first conductivity type. The second contact portion 53 may contact the upper surface of the third semiconductor layer 21. The second contact portion 53 may be in contact with a side surface of the third semiconductor layer 21.

The second contact portion 53 may be in contact with the third metal layer 39. The second contact portion 53 may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type. The third semiconductor layer 21 of the first conductivity type may be electrically connected to the sixth semiconductor layer 33 of the second conductivity type through the second contact portion 53.

The second contact portion 53 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the second contact portion 53 may be formed of, for example, a transparent conductive oxide layer. The second contact portion 53 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

The second contact portion 53 may be in contact with an upper portion of the third semiconductor layer 21 of the first conductivity type. For example, the third semiconductor layer 21 of the first conductivity type may be implemented including a GaN layer. In this case, when the growth direction and the etching direction of the semiconductor layer are considered, the second contact portion 53 may contact the N face of the third semiconductor layer 21 of the first conductivity type.

According to the embodiment, it may include a second insulating ion implantation layer 83 disposed inside the second light emitting structure 20. The second insulating ion implantation layer 83 may electrically insulate the central region of the fourth semiconductor layer 23 from the outer region of the fourth semiconductor layer 23. In addition, the second insulating ion implantation layer 83 may be disposed in the second active layer 22. The second insulating ion implantation layer 83 may electrically insulate the center region and the outer region of the second active layer 22. The second insulating ion implantation layer 83 may be disposed to surround the second active layer 22 where light is actually emitted.

Accordingly, according to the embodiment, the second contact portion 43 may be in contact with the side surface of the third semiconductor layer 21. The center region and the outer region of the second active layer 22 may be electrically insulated by the second insulating ion implantation layer 83. Therefore, according to the embodiment, there is an advantage that a separate insulating layer for electrical insulation is not required between the second light emitting structure 20 and the second contact portion 53.

The second insulating ion implantation layer 83 may be provided by, for example, an ion implantation process. For example, the second insulating ion implantation layer 83 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the second insulating ion implantation layer 83 may be implanted with energy of, for example, 10 KeV to 100 KeV. The second insulating ion implantation layer 83 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the second light emitting structure 20.

According to the embodiment, it may include a third insulating ion implantation layer 85 disposed inside the third light emitting structure (30). The third insulating ion implantation layer 85 may electrically insulate the central region of the sixth semiconductor layer 33 from the outer region of the sixth semiconductor layer 33. In addition, the third insulating ion implantation layer 85 may be disposed in the third active layer 32. The third insulating ion implanted layer 85 may electrically insulate the center region and the outer region of the third active layer 32. The third insulating ion implanted layer 85 may be disposed to surround the third active layer 32 where light is actually emitted.

The third insulating ion implantation layer 85 may be provided by, for example, an ion implantation process. For example, the third insulating ion implantation layer 85 may be provided by injecting at least one of nitrogen (N) ions, oxygen (O) ions, argon (Ar) ions, and hydrogen (H) ions. In addition, the third insulating ion implantation layer 85 may be implanted with energy of, for example, 10 KeV to 100 KeV. The third insulating ion implantation layer 85 may be disposed at a position of 10 micrometers to 15 micrometers from the side surface of the third light emitting structure 30.

9 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.

9, the light emitting device package according to the embodiment includes a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and a molding member 140 surrounding the light emitting device 100. Include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided to a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device. Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a street lamp, a sign, a headlamp.

The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include a display device shown in FIGS. 10 and 11 and a lighting device shown in FIG. 12.

Referring to FIG. 10, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based, such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN) It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating part 1012 having a box shape having an open upper surface, but is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizer may be attached to at least one surface of the display panel 1061, but the polarizer is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. In addition, a protective sheet may be disposed on the display panel 1061, but is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

11 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 11, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve luminance.

The optical member 1154 is disposed on the light emitting module 1060 and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

12 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 12, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment provided on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color such as white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, the white light emitting diode, the red light emitting diode, and the green light emitting diode may be combined and disposed to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

According to the embodiment, the light emitting device may be packaged and mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to implement a light emitting module.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. It will be understood that various modifications and applications are not possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to these modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

27: second reflective electrode 29: second metal layer
30: third light emitting structure 31: fifth semiconductor layer
32: third active layer 33: sixth semiconductor layer
35: third ohmic contact layer 37: third reflective electrode
39: third metal layer 40: insulating layer
43: first contact portion 50: diffusion barrier layer
53: second contact portion 60: bonding layer
70: support member 80: electrode
81: first insulating ion implantation layer 83: second insulating ion implantation layer
85: third insulating ion implantation layer

Claims (20)

Support members;
A light emitting structure disposed on the support member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An ohmic contact layer disposed between the light emitting structure and the support member;
A channel layer disposed around the ohmic contact layer between the light emitting structure and the support member;
An insulating ion implantation layer extending from a bottom surface of the light emitting structure to a portion of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; And
And an electrode layer disposed between the ohmic contact layer and the support member.
The horizontal width of the upper surface of the support member is greater than the horizontal width of the bottom surface of the light emitting structure,
The active layer includes a central region disposed inside the insulating ion implantation layer, and an outer region disposed outside the insulating ion implantation layer,
The channel layer extends to the outside of the light emitting structure at the bottom of the outer region,
The ohmic contact layer is in contact with a bottom surface of the light emitting structure positioned between the insulating ion implantation layer,
The electrode layer extends from the bottom of the ohmic contact layer onto the bottom of the channel layer,
The light emitting structure includes a side inclined with respect to the top surface of the support member between the top surface having a roughness and the bottom surface of the light emitting structure,
The insulating ion implantation layer is continuously disposed along the inclined side to form a closed loop,
The insulating ion implantation layer is disposed inside the inclined side surface, and the light emitting device vertically overlapping the upper surface of the light emitting structure having the roughness. delete The method of claim 1,
The second conductivity type semiconductor layer may include an operation region vertically overlapping with a center region of the active layer and a non-operation region vertically overlapping with an outer region of the active layer.
The ohmic contact layer and the electrode layer are electrically connected to the operating region and electrically insulated from the non-operating region. The method of claim 3,
And the channel layer is in direct contact with the bottom of the non-operational area. The method of claim 1,
The non-operational region of the second conductivity type semiconductor layer includes a first region vertically overlapping the roughness and a second region vertically overlapping the inclined side surface. The method of claim 5,
And the electrode layer vertically overlaps the second area of the non-operation area. The method of claim 6,
The maximum distance in the horizontal direction between the insulating ion implantation layer and the side surface of the light emitting structure is 10 micrometers to 15 micrometers. The method of claim 6,
The ohmic contact layer includes indium tin oxide (ITO), and the electrode layer includes a reflective layer. The method of claim 1,
The insulating ion implantation layer is a light emitting device formed by an ion implantation process. The method of claim 9,
The insulating ion implantation layer is a light emitting device in which at least one ion of nitrogen, oxygen, argon, hydrogen is implanted. Package body;
First and second electrodes spaced apart from each other on an upper surface of the package body;
First and second bonding pads electrically connected to the first and second electrodes, respectively, and spaced apart from each other on a bottom surface of the package body;
A support member disposed on the first electrode and electrically connected to the first electrode;
A light emitting structure on the support member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An ohmic contact layer disposed between the light emitting structure and the support member;
A channel layer disposed around the ohmic contact layer between the light emitting structure and the support member;
A contact portion electrically connected to the first conductivity type semiconductor layer;
An insulating ion implantation layer extending from a bottom surface of the light emitting structure to a portion of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; And
And an electrode layer disposed between the ohmic contact layer and the support member.
The horizontal width of the upper surface of the support member is greater than the horizontal width of the bottom surface of the light emitting structure,
The active layer includes a central region disposed inside the insulating ion implantation layer, and an outer region disposed outside the insulating ion implantation layer.
The channel layer extends to the outside of the light emitting structure at the bottom of the outer region,
The ohmic contact layer is in contact with a bottom surface of the light emitting structure located between the insulating ion implantation layer,
The electrode layer is disposed extending from the bottom of the ohmic contact layer onto the bottom of the channel layer,
The light emitting structure includes a side surface inclined with respect to the top surface of the support member between an upper surface having roughness and a bottom surface of the light emitting structure,
The insulating ion implantation layer is disposed inside the inclined side surface, and vertically overlaps the upper surface having the roughness,
The insulating ion implantation layer is continuously disposed along the inclined side to form a closed loop,
The light emitting structure includes a light emitting device package including a wire electrically connected to the second electrode. delete The method of claim 11,
The second conductivity type semiconductor layer may include an operation region vertically overlapping with a center region of the active layer and a non-operation region vertically overlapping with an outer region of the active layer.
The ohmic contact layer and the electrode layer are electrically connected to the operating region and electrically insulated from the non-operating region. The method of claim 13,
The non-operating region of the second conductive semiconductor layer includes a first region vertically overlapping the roughness and a second region vertically overlapping the inclined side surface. The method of claim 14,
The electrode layer may vertically overlap the second region of the non-operational region. The method of claim 15,
Further comprising a conductive layer electrically connected to the first conductive semiconductor layer,
The conductive layer is a light emitting device package extending in the vertical direction from the support member toward the light emitting structure. The method of claim 16,
The light emitting device package further comprises an insulating layer disposed between the electrode layer and the support member. The method of claim 16,
The channel layer is disposed between the electrode layer and the conductive layer. The method of claim 18,
The channel layer is formed of a material having electrical insulation, and includes at least one of Si0 ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ . The method of claim 11,
The insulating ion implantation layer is a light emitting device package implanted with at least one ion of nitrogen, oxygen, argon, hydrogen.

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