In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer Where stated, the terms " on "and" under "include both the meaning of" directly "and" indirectly ". In addition, the criteria for above or below each layer will be described with reference to the drawings.
Hereinafter, embodiments will be described with reference to the accompanying drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.
1, a light emitting device 100 includes a support member 115, a conductive layer 110, a first light emitting structure layer 120, a second light emitting structure layer 130, a third light emitting structure layer 140, Bonding electrodes 127, 137, 139 and 147, electrode layers 138 and 148, an electrode 149 and a light-transmitting supporting layer 125, 135 and 145.
The light emitting device 100 includes at least three light emitting portions A1, A2, and A3, and at least one of the light emitting portions A1, A2, and A3 includes at least one light emitting structure layer, Layer.
The light emitting device 100 includes at least three light emitting structure layers 120, 130 and 140, and the at least three light emitting structure layers 120, 130, and 140 may be vertically coupled to each other. The at least three light emitting structure layers 120, 130 and 140 may include a wavelength band of the same color or a different color, and the wavelength band may include at least one of a visible light band and an ultraviolet band.
The light emitting device 100 may include at least one light emitting unit A1 and at least two light emitting units A2 and A3 connected in parallel and at least two light emitting units A2 and A3 connected in series. to be. The light emitting portions A1, A2, and A3 may include the light emitting structure layers 110, 120, and 130 and an electrode structure.
The width of the at least three light emitting structure layers 120, 130 and 130 may be the same width or different widths. Preferably, the width of the second light emitting structure layer 130 or the third light emitting structure layer 120 is greater than the width of the first light emitting structure layer 120. The width of the first electrode 140 may be at least narrower than that of the second electrode 140, but the present invention is not limited thereto.
The first light emitting portion A1 includes components from the support member 115 to the first bonding layer 127. The second light emitting portion A2 includes the second bonding layer 137, Layer 139 and the third light emitting portion A3 may include components from the fourth bonding layer 147 to the electrode 149. [
The support member 115 is disposed on the base side and may include a conductive material. The support member 115 may be made of a material such as Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu- GaAs, ZnO, SiC, SiGe, GaN, etc.).
The support member 115 may be formed by an electrolytic plating method, a bonding method or a sheet form, but the present invention is not limited thereto. The support member 115 may be used as a path for supplying power and a heat dissipation path. The support member 115 supports the entire light emitting device and may have a thickness of 30 to 500 탆.
The support member 115 may be formed of an insulating support member such as ZnO or Al 2 O 3 material rather than a conductive member.
At least one conductive layer 110 may be disposed on the support member 110, and preferably a plurality of conductive layers 110 are disposed.
The plurality of conductive layers 110 includes a first conductive layer 111, a second conductive layer 112, a third conductive layer 113, and a fourth conductive layer 114. The first conductive layer 111 may be in ohmic contact with a lower layer of the light emitting structure layer 120. The first conductive layer 111 may be disposed as an ohmic layer, but the present invention is not limited thereto.
The first conductive layer 111 may include a transparent conductive oxide and / or a nitride based conductive material. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), AZO (aluminum zinc oxide) IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, a single-layer using at least one of RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material selected from the group consisting of In, Zn, Sn, Pt, Ag, Ni, Au, Hf and combinations thereof. As another example, the first conductive layer 111 may be formed of a multilayer structure using the transparent conductive oxide and the metal material, and may be formed of, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO And the like. The first conductive layer 111 may have a light transmittance of 50% or more, and preferably 80% or more. A Schottky material or an insulating material may be further disposed in a portion of the first conductive layer 111, and the region may be disposed in a region vertically corresponding to the first connection electrode 126.
The second conductive layer 112 may be disposed below the first conductive layer 111 and may be at least thicker than the first conductive layer 111. The second conductive layer 112 may be narrower or wider than the width of the first conductive layer 111, but the present invention is not limited thereto.
The second conductive layer 112 may be disposed between the supporting member 115 and the first conductive layer 111 to efficiently reflect incident light. The second conductive layer 112 includes a reflective layer, and may preferably include at least one highly reflective metal. The second conductive layer 112 may be formed of a material selected from Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. The second conductive layer 112 may include a metal having a reflectance of 50% or more, and preferably a metal having a reflectance of 90% or more.
A third conductive layer 113 may be disposed under the second conductive layer 112 and the third conductive layer 113 may be disposed between the second conductive layer 112 and the support member 115 . The third conductive layer 113 may be used as a barrier layer between the second conductive layer 112 and the supporting member 115. The third conductive layer 113 may be formed of at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.
The outer side of the third conductive layer 113 may extend under the protective layer 117. The second conductive layer 112 may extend under the protective layer 117 and the outer side of the third conductive layer 113 may be disposed below the second conductive layer 112.
The fourth conductive layer 114 may be used as a bonding layer or a seed layer. The fourth conductive layer 114 may be formed of one selected from the group consisting of In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Cu-Si, Cu-Sb, Cd-Cu, Al-Cu, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au- Ag-Cu-Zn, Ag-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Or may be formed of a layer containing any one or more of Cu2O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P and Pd-Ni.
The fourth conductive layer 114 may be disposed between the third conductive layer 113 and the supporting member 115 to enhance adhesion. At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but the present invention is not limited thereto.
The protective layer 117 is disposed around the lower surface of the light emitting structure layer 120. The protective layer 117 may be defined as a channel layer disposed around the periphery of the light emitting structure layer 120. The passivation layer 117 includes a light-transmitting material, and may be formed of a conductive material or an insulating material. The passivation layer 117 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), IZO (indium zinc oxide), AZO (aluminum zinc oxide), IZTO (indium zinc tin oxide) , IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , And the present invention is not limited thereto.
The inner portion of the passivation layer 117 is disposed below the light emitting structure layer 120 and the outer portion of the passivation layer 117 extends further from the side of the light emitting structure layer 120 in the outward direction.
The first light emitting structure layer 120 includes a plurality of compound semiconductor layers, for example, a Group III-V compound semiconductor. The first light emitting structure layer 120 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In x Al y Ga 1 - having the composition formula of the x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can comprise a semiconductor material.
The first light emitting structure layer 120 includes a first conductive semiconductor layer 121 doped with a first conductive dopant, a first active layer 122, and a second conductive semiconductor layer doped with a second conductive dopant 123). Other layers may be further disposed between the layers, but the present invention is not limited thereto.
A first active layer 122 may be disposed under the first conductive semiconductor layer 121 and a second conductive semiconductor layer 123 may be disposed under the first active layer 122. Here, the first conductive semiconductor layer 121 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an n-type dopant such as Si, Ge, Sn, Se, Te, The semiconductor layer 122 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a p-type dopant such as Mg, Zn, or the like. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.
The first active layer 122 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The first active layer 122 is a Group III -5-group using a compound semiconductor material of the element comprising a well layer and a barrier layer, the well layer is In x Al y Ga 1 -x- y N (0≤x≤ 1, 0? Y ? 1, 0? X + y? 1), and the barrier layer is formed of In x Al y Ga 1 -x- y N (0? X? 1, 0? 0? X + y? 1).
The first active layer 122 may be formed of, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, or a period of an InGaN well layer / InGaN barrier layer, Do not. A conductive clad layer may be formed on and / or below the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The first light emitting structure layer 120 may further include a semiconductor layer under the second conductive semiconductor layer 123 and having a polarity opposite to that of the second conductive type, When the semiconductor layer 123 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the first light emitting structure layer 120 may be formed of any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
The lower surface of the second conductive type semiconductor layer 123 may be in ohmic contact with the first conductive layer 111.
A first light-transmitting supporting layer 125 is disposed between the light-emitting structure layer 120 and the first electrode 127 and the first light-transmitting supporting layer 125 is formed on the first conductive type semiconductor layer 121 with a predetermined thickness As shown in FIG.
The first light-transmitting supporting layer 125 may include an insulating material or a conductive material, and may be formed of a material having a transmittance of at least 70% or more.
The first light-transmitting support layer 125 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the first translucent support layer 125 may include an oxide or a nitride, (ITO), indium zinc oxide (IZO), IZON (indium zinc oxide), IZO (indium zinc oxide), IZO (indium zinc oxide) , IGTO (indium gallium tin oxide), ATO (antimony tin oxide), and the like.
The thickness of the first light-transmitting support layer 125 may be several micrometers or more, preferably 1 to 200 micrometers. The first light-transmitting supporting layer 125 is provided as a space or a spacer through which the light emitted from the first active layer 122 can be sufficiently diffused.
The first light-transmitting support layer 125 may extend to the upper surface of the first light-emitting structure layer 120 as well as the first surface. The first light-transmitting structure layer 125 is formed on the side surface of the first light-emitting structure layer 120 as an insulating material, thereby preventing inter-layer shorting of the first light-emitting structure layer 120.
A first bonding layer 127 may be disposed on the first light-transmitting support layer 125, and the first bonding layer 127 may be formed of a metal layer or pattern. The first bonding layer 127 may be a seed metal.
The first bonding layer 127 is disposed on the first light-transmitting support layer 125 and is connected to the first connection electrode 126. The first connection electrode 126 may be disposed under the first bonding layer 127 and a portion of the first connection electrode 126 may contact the first conductive semiconductor layer 121.
The first bonding layer 127 may be formed on a portion of the first light-transmitting support layer 125 and the first light-transmitting support layer 125 may be at least 50% of the upper surface area of the first light- Preferably 85% or more.
The first connection electrodes 126 may be arranged in one or more than one, and the plurality of first connection electrodes 126 may be spaced apart from each other. The first connection electrode 126 passes through the first light-transmitting supporting layer 125 through a through hole or a via structure.
The lower end of the first connection electrode 126 may be disposed below the upper surface of the first conductive type semiconductor layer 121 and the contact area with the first conductive type semiconductor layer 121 may be increased. have.
The first connection electrode 126 includes an ohmic electrode and may be formed of a metal such as Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, , And Cu, and may be formed of at least two layers. The first connection electrode 126 includes an ohmic portion, a connection portion, and a bonding portion. The ohmic portion is in contact with the first conductive type semiconductor layer 121 with a material such as Cr, V, W, TI, Wherein the first bonding layer and the second bonding layer are disposed between the ohmic portion and the bonding portion using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, 127).
The first bonding layer 127 may include at least one of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au. In addition, the first bonding layer 127 may be a eutectic metal, and may be an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.
An insulating layer 119 is formed on the side surfaces of the first translucent support layer 125 and the first light emitting structure layer 120 to protect the layers of the light emitting structure layer 120. remind
The external electrode 128 connected to the first bonding layer 127 extends over the protective layer 117 along the first side of the insulating layer 119 and may be used as a pad. The external electrode 128 is disposed to be electrically opened with the conductive layer 110. The first bonding layer 127 may connect the first light emitting portion A1 and the second and third light emitting portions A2 and A3 in parallel.
A second bonding layer 137 is disposed below the second light emitting structure layer 130 or the second light transmitting support layer 135. The second bonding layer 137 is bonded onto the first bonding layer 127, Lt; / RTI > The second bonding layer 137 may be formed as a layer or a pattern, and may be formed to correspond to a part of the first bonding layer 127. The second bonding layer 137 may have a pattern of the same shape as a part of the first bonding layer 127 and may be bonded to each other. However, the present invention is not limited thereto. The second bonding layer 137 may include at least one of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au. In addition, the second bonding layer 137 may be a eutectic metal, and may be an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.
The second bonding layer 137 is formed on a portion of the second light-transmitting support layer 135 and the second light-transmitting support layer 135 is formed on at least 50% of the upper surface area of the second light- Preferably 85% or more.
The second connection electrode 136 may include an ohmic electrode and may be formed of a metal such as Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, , And Cu, and may be formed of at least two layers. The second connection electrode 136 includes an ohmic portion, a connection portion, and a bonding portion. The ohmic portion is contacted with the third conductive type semiconductor layer 131 by a material such as Cr, V, W, TI, And the second bonding layer is formed of a metal such as Au and is disposed between the ohmic portion and the bonding portion using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, (137).
The second connection electrode 136 is disposed on the lower surface of the third conductive type semiconductor layer 131. The second connection electrodes 136 may be arranged in one or more than one, and the plurality of second connection electrodes 136 may be spaced apart from each other. The second connection electrode 136 penetrates through the second light-transmitting support layer 135 through a through hole or a via structure.
A second transmissive support layer 135 is disposed between the second bonding layer 137 and the second light emitting structure layer 130 and the second transmissive support layer 135 includes an insulating material or a conductive material, % ≪ / RTI > or higher.
The second light-transmitting support layer 135 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the second light-transmitting supporting layer 135 may include an oxide or a nitride and may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum nitride zinc oxide (IZON) zinc tin oxide (IZO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and antimony tin oxide (ATO).
The thickness of the second light-transmitting supporting layer 135 may be several μm or more, and preferably, 1 μm to 200 μm. The second light-transmitting support layer 135 is provided as a space or a spacer through which light emitted from the second active layer 132 can be sufficiently diffused.
The second light-transmissive support layer 135 may extend to the upper surface of the second light-emitting structure layer 130 as well as to the side surface thereof. The second light-transmitting structure layer 135 is formed on the side surface of the second light-emitting structure layer 130 as an insulating material, thereby preventing interlayer short-circuiting of the second light-emitting structure layer 130.
The first transmissive support layer 125 may be spaced apart from the second transmissive support layer 135 and the spacing may be spaced by a thickness of the first bonding layer 127 and the second bonding layer 137 . The region 161 between the first light-transmitting supporting layer 125 and the second light-transmitting supporting layer 135 is a spacer, and may be filled with a vacant region and / or an insulating material. Either the first transmissive support layer 125 or the second transmissive support layer 135 may be removed, but the present invention is not limited thereto.
A second light emitting structure layer 130 is disposed on the second light-transmitting support layer 135. The second light emitting structure layer 130 includes a plurality of compound semiconductor layers and includes, for example, Group III-V compound semiconductors. do. The second light emitting structure layer 130 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In x Al y Ga 1 - having the composition formula of the x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can comprise a semiconductor material.
The second light emitting structure layer 130 may include a third conductive semiconductor layer 131 doped with a first conductive dopant, a second active layer 132, and a third conductive semiconductor layer doped with a second conductive dopant 133). Other layers may be further disposed between the layers, but the present invention is not limited thereto.
A second active layer 132 may be disposed on the third conductive semiconductor layer 131 and a fourth conductive semiconductor layer 133 may be disposed on the second active layer 132. Here, the third conductive semiconductor layer 131 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an n-type dopant such as Si, Ge, Sn, Se, Te, The semiconductor layer 133 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a p-type dopant such as Mg, Zn, or the like. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.
The second active layer 132 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The second active layer 132 may include a well layer and a barrier layer using a Group III-V compound semiconductor material, and the well layer may include In x Al y Ga 1 -x- y N (0? X 1, 0? Y ? 1, 0? X + y? 1), and the barrier layer is formed of In x Al y Ga 1 -x- y N (0? X? 1, 0? , 0? X + y? 1).
The second active layer 132 may be formed, for example, as a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer, I do not. A conductive clad layer may be formed on and / or below the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The second light emitting structure layer 130 may further include a semiconductor layer having a polarity opposite to the fourth conductivity type on the fourth conductive semiconductor layer 133. The semiconductor layer may include, When the conductive semiconductor layer 133 is a p-type semiconductor layer, the conductive semiconductor layer 133 may be formed of an N-type semiconductor layer. Accordingly, the second light emitting structure layer 130 may be formed of any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
The second active layer 132 may be formed of the same compound semiconductor as the first active layer 122 or may be formed of a different compound semiconductor. The second active layer 132 emits light of a first peak wavelength, and the first active layer 122 emits light of a second peak wavelength. The light of the first peak wavelength and the light of the second peak wavelength may be the same wavelength band or different wavelength bands, but are not limited thereto.
A first electrode layer 138 may be formed on the fourth conductive semiconductor layer 133 and the first electrode layer 138 may be formed as a light transmitting conductive layer. The light-transmitting conductive layer includes an oxide or a nitride. The conductive layer may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), AZO (aluminum zinc oxide), IZTO (indium zinc tin oxide) aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. ≪ / RTI > As another example, the first electrode layer 138 may include an ohmic contact material and may include at least one of In, Zn, Sn, Ni, Pt, and Ag.
The first electrode layer 138 may be formed at least 50% or more of the area of the upper surface of the fourth conductive type semiconductor layer 133, and the current may be diffused. Also, the first electrode layer 138 can improve the extraction efficiency of the second light emitted from the second active layer 132.
A third bonding layer 139 is formed on the first electrode layer 138 and a third bonding layer 139 is formed on at least one of the first bonding layer 127 and the second bonding layer 137 . ≪ / RTI >
A fourth bonding layer 147 is formed on the third bonding layer 139. The third bonding layer 139 and the fourth bonding layer 147 may have a circular or polygonal shape, May be formed in a pattern of the same shape for bonding to each other.
The fourth bonding layer 147 may be disposed under the third light emitting structure layer 140 or the third light transmitting support layer 145. The third light-transmitting structure layer 145 may be disposed between the fourth bonding layer 147 and the third light-emitting structure layer 140. The third and fourth bonding layers 139 and 147 correspond to a part of the third light-transmitting supporting layer 145 and the third light-transmitting supporting layer 145 corresponds to a part of the upper surface area of the third light- At least 50%, preferably at least 85%.
The third transparent support layer 145 may include an insulating material or a conductive material, and may be formed of a material having a transmittance of at least 70% or more.
The third light-transmitting support layer 145 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the third light-transmitting supporting layer 145 may include an oxide or a nitride and may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), IZON (indium zinc oxide), AZO zinc tin oxide (IZO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and antimony tin oxide (ATO).
The third transparent support layer 145 may have a thickness of several micrometers or more, and preferably a thickness of 1 to 200 micrometers. The third light-transmitting supporting layer 145 is provided as a space or a spacer through which the light emitted from the third active layer 142 can be sufficiently diffused.
The third light-transmitting support layer 145 may extend further to the side surface as well as the bottom surface of the third light-emitting structure layer 140. The third light-transmitting structure layer 145 is formed on the side surface of the third light-emitting structure layer 140 as an insulating material, thereby preventing interlayer short-circuiting of the third light-emitting structure layer 140.
The third transparent support layer 145 may be spaced apart from the first electrode layer 138 and spaced apart by a thickness of the third bonding layer 139 and the fourth bonding layer 147.
A third connection electrode 146 connecting the fourth bonding layer 147 and the fifth conductive type semiconductor layer 141 is disposed in the third transparent support layer 145. The third connection electrode 146 ) Contains at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, can do. The third connection electrode 146 includes an ohmic portion, a connection portion, and a bonding portion, and the ohmic portion is in contact with the fifth conductive type semiconductor layer 141 with a material such as Cr, V, W, TI, Wherein the bonding portion is formed of a metal such as Au and the bonding portion and the fourth bonding layer are formed of a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, (147).
The third connection electrode 146 is disposed above the lower surface of the fifth conductive type semiconductor layer 141. The third connection electrodes 146 may be arranged in one or more than one, and the plurality of third connection electrodes 146 may be spaced apart from each other. The third connection electrode 146 is penetrated through the third light-transmitting supporting layer 145 through a through hole or via structure.
The positions of the first and second connection electrodes 126 and 136 may be correspondingly arranged in the vertical direction or may be arranged to be shifted from each other. The second connection electrode 136 and the third connection electrode 146 may correspond to each other in the vertical direction or may be disposed to be shifted from each other.
The region 162 between the third light-transmitting supporting layer 145 and the first electrode layer 138 is a spacer, and may be filled with a vacant region and / or an insulating material. At least one of the first to third light-transmitting supporting layers 125, 135, and 145 may not be formed, but the present invention is not limited thereto.
A third light emitting structure layer 140 is disposed on the third light-transmitting support layer 145. The second light emitting structure layer 140 includes a plurality of compound semiconductor layers and includes, for example, a Group III-V compound semiconductor do. The fourth light emitting structure layer 140 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In x Al y Ga 1 - having the composition formula of the x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can comprise a semiconductor material.
The third light emitting structure layer 140 includes a fifth conductive semiconductor layer 141 doped with a first conductive dopant, a third active layer 142, and a sixth conductive semiconductor layer doped with a second conductive dopant 143). Other layers may be further disposed between the layers, but the present invention is not limited thereto.
A third active layer 142 is disposed on the fifth conductive type semiconductor layer 141 and a third active layer 142 is disposed on the third conductive type semiconductor layer 141. [ The sixth conductive type semiconductor layer 143 may be disposed on the second conductive type semiconductor layer. The fifth conductive semiconductor layer 131 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an N-type dopant such as Si, Ge, Sn, Se, Te, The semiconductor layer 143 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a p-type dopant such as Mg, Zn, or the like. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.
The third active layer 142 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The third active layer 142 may include a well layer and a barrier layer using a Group III-V compound semiconductor material, and the well layer may include In x Al y Ga 1 -x- y N (0? X 1, 0? Y ? 1, 0? X + y? 1), and the barrier layer is formed of In x Al y Ga 1 -x- y N (0? X? 1, 0? , 0? X + y? 1).
The third active layer 142 may be formed, for example, as a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer, I do not. A conductive clad layer may be formed on and / or below the third active layer 142, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The third light emitting structure layer 140 may further include a semiconductor layer having a polarity opposite to the fourth conductivity type on the sixth conductive type semiconductor layer 143. The semiconductor layer may include, When the conductive semiconductor layer 143 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the third light emitting structure layer 140 may be formed of any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
The third active layer 142 may be formed of the same compound semiconductor as at least one of the first active layer 122 and the second active layer 132, or may be formed of a different compound semiconductor. The first active layer 122 emits a first light, the second active layer 132 emits a second light, and the third active layer 142 emits a third light. At least one of the first to third lights may have a peak wavelength equal to or different from a peak wavelength of the other light, but the present invention is not limited thereto.
A second electrode layer 148 may be formed on the sixth conductive type semiconductor layer 143 and the second electrode layer 148 may be formed as a light transmitting conductive layer. The light-transmitting conductive layer includes an oxide or a nitride. The conductive layer may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), AZO (aluminum zinc oxide), IZTO (indium zinc tin oxide) aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. ≪ / RTI > As another example, the second electrode layer 148 may include an ohmic contact material, and may include at least one of In, Zn, Sn, Ni, Pt, and Ag.
The second electrode layer 148 may be formed of at least 50% or more of the area of the upper surface of the sixth conductive type semiconductor layer 143 to diffuse the current. Also, the second electrode layer 148 may improve the extraction efficiency of the third light emitted from the third active layer 142.
An electrode 149 is formed on the fourth electrode layer 148. The electrode 149 may be a pad or an electrode pattern connected to the pad. The electrode 149 may be a current diffusion structure, and may further include structures such as an arm type pattern, a branch type pattern, and a finger type pattern.
The light emitting device 100 includes a conductive layer 110 disposed on a support member 115 and a first light emitting structure layer 120 disposed between the conductive layer 110 and the first bonding layer 127, Two light emitting structure layers 130 and 140 are disposed between the second bonding layer 137 and the electrode 149.
At least one of the first and second light-transmitting structure layers 125 and 135 may be disposed between the first light-emitting structure layer 120 and the second light-emitting structure layer 130, The third light-transmitting supporting layer 145 is disposed.
The supporting member 115 and the conductive layer 110 may be a first electrode and the fourth connecting electrode 128 connected to the first bonding layer 127 may be a second electrode. 149 may be classified as a third electrode. Each bonding layer can also be used as an electrode.
The first conductivity type semiconductor layer 121 may be formed to be at least thicker than the second conductivity type semiconductor layer 123 or the first active layer 122, The fifth conductive type semiconductor layer 141 may be formed to be at least thicker than the conductive type semiconductor layer 133 or the second active layer 132. The fifth conductive type semiconductor layer 141 may be formed to be thicker than the sixth conductive type semiconductor layer 143 or the third active layer 142 The thickness of the first insulating layer may be at least thicker than the thickness of the second insulating layer. The light-transmitting support layers 125, 135, and 135 may be disposed on the semiconductor layers of the first, third, and fifth conductive type semiconductor layers 121, 131, and 141, respectively, of the semiconductor layers of the light emitting structure layers 120, 130 and 140.
The upper surface of the first conductivity type semiconductor layer 121 is N-face, the lower surface of the first conductivity type semiconductor layer 131 is N-face, and the first and third conductivity type semiconductor layers 121 and 131 are N- The N-faces of the first and second substrates are opposed to each other.
The refractive index of each of the light-transmitting support layers 125, 135, and 145 includes a range of 1.3 to 2.3. The light-transmitting support layers 125, 135, and 145 have a refractive index at least lower than the refractive index (eg, 2.45) of the compound semiconductor, for example, GaN, on or under the light emitting structure layers 120 and 130 and are thickly arranged. .
FIG. 2 is a view showing another example of each light emitting structure layer of FIG. 1. FIG.
Referring to FIG. 2, the first conductive semiconductor layer 121 of the first light emitting structure layer includes a first semiconductor layer L1 and a second semiconductor layer L2, A semiconductor layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) and / or a superlattice structure. The superlattice structure of the first semiconductor layer L1 may be a superlattice structure of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? And a second layer having a compositional formula of In x Al y Ga 1 -xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) Layer. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged, and includes, for example, a structure of GaN / InGaN structure, GaN / AlGaN and the like. The superlattice structure may have a thickness of several angstroms or more and may be stacked in two or more pairs.
The second semiconductor layer L2 may be a semiconductor layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? Superlattice structure. The superlattice structure of the second semiconductor layer L2 may be a superlattice structure of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1, and a layer having a different band gap from the first layer and having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) And a second layer. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged and includes, for example, a structure of InGaN / GaN structure or AlGaN / GaN. The superlattice structure may have a thickness of several angstroms or more and may be stacked in two or more pairs.
The second conductive semiconductor layer 123 may include a third semiconductor layer L3 and a fourth semiconductor layer L4 and the third semiconductor layer L3 may be formed of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) and / or a superlattice structure. The superlattice structure may include a stacked structure of AlGaN / GaN. The fourth semiconductor layer L4 may be a semiconductor layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? Superlattice structure.
The embodiment is not limited to the first conductivity type semiconductor layer 121 of the first light emitting structure layer, but also the third conductivity type semiconductor layer of the second light emitting structure layer and the fourth conductivity type semiconductor layer of the third light emitting structure layer One layer can be formed into a superlattice structure. In addition to the second conductivity type semiconductor layer 123 of the first light emitting structure layer, at least one of the fourth conductivity type semiconductor layer of the second light emitting structure layer and the sixth conductivity type semiconductor layer of the third light emitting structure layer Can be formed in a superlattice structure. Wherein the superlattice structure comprises at least two layers having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) Can be stacked with different band gap energies.
Referring to FIG. 3, it is another example of the first light emitting structure layer.
The first light emitting structure layer 120 is formed on the first conductive semiconductor layer 121, the active layer 122, the second conductive semiconductor layer 123, Type semiconductor layer 124 is further included. The first conductive type may be an N type, the second conductive type may be a P type, and the second conductive type may be formed in an opposite structure. The first light emitting structure layer 120 may include a junction structure of N-P-N or P-N-P.
At least one of the second and third light emitting structure layers as well as the first light emitting structure layer 120 may include the NPN or PNP junction structure.
Fig. 4 is a view showing the light extracting structure of the light-transmitting supporting layer and the light emitting structure layer in the embodiment. Fig.
Referring to FIG. 4, the first conductive semiconductor layer 121 of the first light emitting structure layer 120 may include a light extracting structure 121A, The top surface of the semiconductor layer 121 may have a concavo-convex shape, and the concavo-convex shape may include a structure such as a texture pattern or roughness having a regular or irregular size.
The light extracting structure 121A is formed on the upper surface of the first conductive semiconductor layer 121, that is, on the N-face, thereby changing the critical angle of the incident light, thereby improving the light extraction efficiency.
The light extracting structure 121A is formed on the upper surface of the first conductive semiconductor layer 121 so that the interface between the first conductive semiconductor layer 121 and the first translucent support layer 125 is separated from the light extracting structure 121A ). As another example, another semiconductor layer such as an undoped semiconductor layer having a light extracting structure 121A may be further disposed between the first light-transmitting supporting layer 125 and the first conductive type semiconductor layer 121, The present invention is not limited thereto.
In addition, the light extracting structure may further include at least one of the third conductive type semiconductor layer of the second light emitting structure layer and the fifth conductive type semiconductor layer of the third light emitting structure layer, but the present invention is not limited thereto.
Further, a light extracting structure may be further provided on the upper surface of the first light-transmitting support layer 125, for example, on the opposite side of the first light-emitting structure layer. The light extracting structure may change the critical angle of incident light to increase the light extraction efficiency. The light extracting structure of the first light emitting portion may be selectively applied to each layer of the second and third light emitting portions, but the present invention is not limited thereto.
5 is a diagram showing an example of a plurality of light extracting structures in the embodiment.
5, the surface of at least two of the second light emitting structure layer 130, the second light transmitting support layer 135, and the second bonding layer 137 in the second light emitting portion may be formed as a light extracting structure . For example, the lower surface of the third conductive semiconductor layer 131 may be formed as a first light extracting structure 131A, and the upper surface of the fourth conductive type semiconductor layer 133 may be formed as a second light extracting structure 133A The upper surface of the first electrode layer 138 may be formed of a third light extracting structure 138A and the lower surface of the second light transmitting supporting layer 135 may be formed of a fourth light extracting structure 135A .
The interface between the first electrode layer 138 and the electrode 139 is formed as a rough surface by the third light extracting structure 138A so that the loss of light incident on the electrode 139 can be reduced.
The interface between the second light-transmitting supporting layer 135 and the second bonding layer 137 is formed as a rough surface by the fourth light extracting structure 135A, so that the light incident on the second bonding layer 137 Loss can be reduced.
Although the light extracting structure is formed in the second light emitting structure layer 130 and the adjacent layers 135 and 138 of the second light emitting portion, at least one of the first light emitting portion and the third light emitting portion may have the second A light extracting structure that is the same as or similar to the light extracting structure of the light emitting portion may be formed, but the present invention is not limited thereto.
6 is a view showing an example of a bonding layer and a connecting electrode in the embodiment. The description above refers to the second bonding layer 137 and the second connection electrode 136 while the other bonding layer and connection electrode are formed by the second bonding layer 137 and the second connection electrode 136, Can be selectively applied.
Referring to FIG. 6A, the second bonding layer 137 is in the shape of a disk, and the second connection electrode 136 is disposed under the second bonding layer 137. The second connection electrode 136 may be disposed below the center of the second bonding layer 137. The width of the second connection electrode 136 may be narrower than the width of the second bonding layer 137. The second connection electrode 136 includes a circular or polygonal shape, but is not limited thereto.
6B, the second bonding layer 137 includes a center-side first portion C1, a second portion P1 extending outward from at least one side of the first portion C1, . The second portions P1 may extend on opposite sides of the first portion C1 with respect to the first portion C1 or may be shifted by a predetermined angle, and may have the same length or different lengths.
A plurality of second connection electrodes 136 are disposed under the second bonding layer 137 and the plurality of second connection electrodes 136 are formed on the first and second bonding layers 137 and 137 of the second bonding layer 137, And the second portion P1, respectively. The plurality of second connection electrodes 136 may be in contact with different regions of the first conductivity type semiconductor layer to distribute and supply current.
6C, the second bonding layer 137B includes a center-side first portion C2, a second portion P2 in the form of a line, and a loop-shaped second portion P2 around the second portion P2. And the second portion P2 is branched to at least both sides of the first portion C2, and the third portion P3 is formed so that the area of the first portion C2 is wider than the other region, And the third portion P3 is connected to at least a part of the second portion P2 and is formed in a circular or polygonal shape.
A second connection electrode 136 is disposed under the second bonding layer 137B and the second connection electrode 136 is disposed between the first portion C2 of the second bonding layer 137 and the third portion P3. ≪ / RTI > The second connection electrode 136 may be further disposed below the third portion P3, but the present invention is not limited thereto.
Referring to FIG. 6D, the second bonding layer 137C includes a first portion C3 and a second portion P4, and the first portion C3 has a wider And the second portion P4 may be disposed at an angle of at least 30 to 120 degrees with respect to the first portion C3. The second portion P4 may have a finger shape, be spaced apart at intervals of 90 degrees, and be formed to have the same length or different lengths.
A plurality of second connection electrodes 136 may be disposed under the second bonding layer 137 and the plurality of second connection electrodes 136 may be spaced apart from each other to prevent current concentration.
The structure of the second bonding layer 137 and the second connection electrode 136, as well as other bonding layers and other connection electrodes may be selectively formed from the structure described above. Also, since the second bonding layer 137 is bonded to a part of the first bonding layer 137, the bonding portions may be formed in the same shape.
7 to 21 are views showing a process of manufacturing the light emitting device of FIG.
Referring to FIG. 7, a first light emitting structure layer 120 is formed on a first substrate 101. The first substrate 101 may be loaded in a growth apparatus, and a plurality of compound semiconductor layers may be formed on the first substrate 101. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, and the like, and the present invention is not limited thereto.
The first substrate 101 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, GaAs and Ga 2 O 3 . An irregular structure may be formed on the first substrate 101, and the irregular structure may be formed in a lens shape, a stripe shape, or the like.
On the first substrate 101, a structure (for example, a pattern shape, a column shape, or the like) for improving the crystal structure and light extraction efficiency by using a compound semiconductor of Group 2 or Group 6 elements (for example, ZnO or GaN) .
A buffer layer and / or an undoped semiconductor layer may be formed on the first substrate 101, and the buffer layer may be formed to reduce the difference in lattice constant between the first substrate 101 and the compound semiconductor . The buffer layer may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP using Group III-V compound semiconductors. The undoped semiconductor layer is an undoped nitride based semiconductor, which is a semiconductor layer intentionally not doped with a conductive dopant. The undoped semiconductor layer is a semiconductor layer having electrical conductivity significantly lower than that of the first conductivity type semiconductor layer, and may be, for example, an undoped GaN layer and may have a first conductivity type characteristic. The undoped semiconductor layer may be formed to a thickness of 1 to 3 mu m. For convenience of explanation, the first light emitting structure layer 120 is grown on the first substrate 101.
The first light emitting structure layer 120 includes a first conductive semiconductor layer 121, a first active layer 122 and a second conductive semiconductor layer 123. The first conductive semiconductor layer 121, For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like, which are compound semiconductors of group III-V elements doped with the first conductive type dopant. The first active layer 122 is formed on the first conductivity type semiconductor layer 121 and may be formed of a compound semiconductor of Group 3-V group elements. The first active layer 122 may have a single or multiple quantum well structure, or may have a quantum wire structure or a quantum dot structure. The first active layer 122 may include a well layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y Ga 1 -x- y N (0? x? 1, 0? y? 1, 0? x + y? 1). The first active layer 122 may be formed, for example, as a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer, I do not. A conductive clad layer may be formed on and / or below the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The first light emitting structure layer 120 may be formed of an N-type first conductivity type, a P-type second conductivity type, or a reverse structure thereof. In addition, the first light emitting structure layer 120 may further include a first conductive type, such as an N-type semiconductor layer, on the second conductive type semiconductor layer 123. Accordingly, the first light emitting structure layer 120 may include at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.
Referring to FIG. 8, a protective layer 117 is formed on a second region except the first region on the first light emitting structure layer 120, and the second region includes a peripheral region or an edge region And may be formed into a polygonal shape having a loop shape, or a band structure. The protective layer 117 may be formed as a single layer or a multi-layer, but is not limited thereto.
The passivation layer 117 may have a light-transmitting insulating layer or a conductive layer. The passivation layer 117 may be formed of a sputtering apparatus or a deposition apparatus after forming a mask pattern in the first region.
The light-transmitting insulating layer may be selectively formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2, or the like. The light-transmitting conductive layer includes an oxide or a nitride. The conductive layer may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZON nitride, IZTO (indium zinc oxide) (indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO)
Referring to FIG. 9, a plurality of conductive layers 110 and support members 115 are formed on the second conductive type semiconductor layer 123. The plurality of conductive layers 110 may include a first conductive layer 111 on the second conductive type semiconductor layer 123, a second conductive layer 112 on the first conductive layer 111, A third conductive layer 113 is formed on the layer 112 and a fourth conductive layer 114 is formed on the third conductive layer 113. The plurality of conductive layers 110 may be formed by selectively using a sputtering method, a plating method, and a deposition method. However, the present invention is not limited thereto.
The first conductive layer 111 may be formed on the second conductive type semiconductor layer 123 by disposing a second region in a mask pattern. The first conductive layer 111 may include a transparent conductive oxide and / or a nitride based conductive material. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), AZO (aluminum zinc oxide) IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, a single-layer using at least one of RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material selected from the group consisting of In, Zn, Sn, Pt, Ag, Ni, Au, Hf and combinations thereof. As another example, the first conductive layer 111 may be formed of a multilayer structure using the transparent conductive oxide and the metal material, and may be formed of, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO And the like.
The second conductive layer 112 may have a thickness different from that of the first conductive layer 111 on the first conductive layer 111. The second conductive layer 112 may extend over the protective layer 117, but the present invention is not limited thereto. The second conductive layer 112 includes a metal that can efficiently reflect incident light. The second conductive layer 112 includes a reflective material and may include at least one metal layer such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Hf, and combinations thereof. The second conductive layer 112 may include a metal having a reflectance of 50% or more, and preferably a metal having a reflectance of 90% or more.
The third conductive layer 113 may be formed on the second conductive layer 112 and the third conductive layer 113 may be formed of one or more of Ni, Pt, Ti, W, V, Fe, Or may be formed as a single layer or multiple layers. The outer side of the third conductive layer 113 may extend over the protective layer 117.
The fourth conductive layer 114 may be formed on the third conductive layer 113 and used as a bonding layer or a seed layer. The fourth conductive layer 114 may be formed of one selected from the group consisting of In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Cu-Si, Cu-Sb, Cd-Cu, Al-Cu, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au- Ag-Cu-Zn, Ag-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Or may be formed of a layer containing any one or more of Cu2O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P and Pd-Ni.
At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but the present invention is not limited thereto.
A supporting member 115 is disposed on the fourth conductive layer 114, and the supporting member 115 may include a conductive material. The support member 115 may be made of a material such as Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu- GaAs, ZnO, SiC, SiGe, GaN, etc.).
The support member 115 may be formed by an electrolytic plating method, a bonding method or a sheet form, but the present invention is not limited thereto. The support member 115 may be used as a path for supplying power and a heat dissipation path. The support member 115 supports the entire light emitting device and may have a thickness of 30 to 500 탆. As another example, the support member 115 may be formed of an insulating supporting member such as a ZnO or Al 2 O 3 material rather than a conductive member.
FIG. 10 shows a structure in which the structure of FIG. 9 is rotated by being rotated in the reverse direction.
Referring to FIGS. 9 and 10, the first substrate 101 is removed by a physical lift-off method. At least the first substrate 101 is removed from the first light emitting structure layer 120 by irradiating the first substrate 101 with a laser having a predetermined wavelength. This method can be defined as a laser lift off (LLO). The first substrate 101 may be removed by a chemical lift-off method, which wet-etches between the first substrate 101 and the semiconductor layer (e.g., a buffer layer) to separate the first substrate 101 have.
The upper surface of the first conductive semiconductor layer 121 of the first light emitting structure layer 120 is an N-face, and processes such as polishing and polishing may be performed. The upper surface of the first conductivity type semiconductor layer 121 may be formed with a light extracting structure.
Referring to FIG. 11, etching is performed to the outside of the first light emitting structure layer 120. The outer side of the protective layer 117 is exposed by the etching process of the first light emitting structure layer 120. The etch process may include dry and / or wet etch and etch to a boundary region between the chip and the chip.
The outer side of the first light emitting structure layer 120 may be treated as a surface perpendicular to the lower surface of the support member 105, or may be treated as an inclined surface. Each layer of the first light emitting structure layer 120 may be formed to have a width that becomes gradually narrower as the distance from the support member 115 increases. The etching process may be performed after forming the first light-transmitting support layer 125 or after the first light-transmitting support layer 125 is formed.
The upper surface of the first conductive semiconductor layer 121 may be formed by a dry etching or a wet etching with a light extracting structure as shown in FIG. 4, but the present invention is not limited thereto.
A first light-transmitting support layer 125 may be formed on the first light-emitting structure layer 120. The first light-transmitting supporting layer 125 may be formed on the first conductive type semiconductor layer 121 to have a width equal to or narrower than the width of the first conductive type semiconductor layer 121.
The first light-transmitting support layer 125 may be formed of sputtering and / or vapor deposition equipment, such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the first light-transmitting support layer 125 (ITO), indium zinc oxide (IZO), IZON (indium zinc oxide), IZO (indium zinc oxide), IZO (indium zinc oxide) , IGTO (indium gallium tin oxide), ATO (antimony tin oxide), and the like.
The thickness of the first light-transmitting support layer 125 may be several micrometers or more, preferably 1 to 200 micrometers. The first light-transmitting supporting layer 125 is provided as a space or a spacer through which the light emitted from the first active layer 122 can be sufficiently diffused.
11, a hole 126A is formed from the first light-transmitting supporting layer 125 to a depth at which the first conductive type semiconductor layer 121 is exposed, and then the first connection electrode 126 ). The hole 126A may be formed using a laser or a drill, but is not limited thereto. The hole 126A is formed to extend further downward than the upper surface of the first conductive type semiconductor layer 121 to increase the contact area of the first connection electrode 126. [
A first connection electrode 126 is formed in the hole 126A and the first connection electrode 126 is in ohmic contact with the first conductivity type semiconductor layer 121. [ The first connection electrode 126 may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, And may be formed of at least two layers. The first connection electrode 126 may be formed by selectively using sputtering, plating, or deposition equipment. However, the present invention is not limited thereto.
The first connecting electrode 126 includes an ohmic portion M 1, a connecting portion M 2 and a bonding portion M 3. The ohmic portion M 1 is formed of a material such as Cr, V, W, TI, Type semiconductor layer 121. The connection portion M2 is formed of a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, M3, and the bonding portion M3 is connected between the connection portion M2 and the first bonding layer 127 by a metal such as Au.
The first bonding layer 127 may include at least one of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au. In addition, the first bonding layer 127 may be a eutectic metal, and may be an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.
An insulating layer 119 is formed on a side surface of the first light emitting structure layer 120. One side of the insulating layer 119 extends around the upper surface of the first light transmitting supporting layer 125, (Not shown).
A fourth connection electrode 128 connected to the first bonding layer 127 may be disposed on the protection layer 117 along the outer side of the insulation layer 119 and may be used as a pad.
7 to 11 illustrate a process of forming the first light emitting portion A1. The first light emitting portion A1 may be a single chip structure, but the present invention is not limited thereto.
11 is an example of a plan view of FIG. 11, the first bonding layer 127 has a wide central bonding region, the second portion P1 branches outwardly in at least one line form, The connection electrode 128 extends over the protective layer 117.
13 is a view showing an example of the formation of the second light emitting portion A2.
Referring to FIG. 13, a second light emitting structure layer 130 is formed on a second substrate 102. The second substrate 102 may be loaded in the growth equipment, and a plurality of compound semiconductor layers may be formed on the second substrate 102. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, and the like, and the present invention is not limited thereto.
The second substrate 102 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, GaAs and Ga 2 O 3 . An irregular structure may be formed on the second substrate 102, and the irregular structure may be formed in a lens shape, a stripe shape, or the like.
A structure (for example, a pattern shape, a columnar shape, or the like) for improving the crystal structure and the light extraction efficiency is formed on the second substrate 102 by using compound semiconductors (for example, ZnO, GaN) .
In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the second substrate 102, and the buffer layer may be formed to reduce a difference in lattice constant between the second substrate 102 and the compound semiconductor . The buffer layer may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP using Group III-V compound semiconductors. The undoped semiconductor layer may be formed of a GaN-based semiconductor layer, but is not limited thereto.
A second light-transmitting support layer may be formed between the second substrate 102 and the second light-emitting structure layer 130, and the second light-transmitting support layer may be formed of a material such as sapphire . For convenience of explanation, the second light emitting structure layer 130 is grown on the second substrate 102.
The second light emitting structure layer 130 includes a third conductive semiconductor layer 131, a second active layer 132 and a fourth conductive semiconductor layer 133. The third conductive semiconductor layer 131, For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like, which are compound semiconductors of group III-V elements doped with the first conductive type dopant. The second active layer 132 is formed on the third conductive type semiconductor layer 131 and may be formed of a compound semiconductor of Group 3-VI elements. The second active layer 132 may have a single or multiple quantum well structure, or may have a quantum wire structure or a quantum dot structure. The second active layer 132 may include a well layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? y Ga 1 -x- y N (0? x? 1, 0? y? 1, 0? x + y? 1). The second active layer 132 may be formed of, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer, I do not. A conductive clad layer may be formed on and / or below the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The second light emitting structure layer 130 may be formed of an N-type semiconductor of the third conductivity type, a P-type semiconductor of the fourth conductivity type, or an inverted structure thereof. In addition, the second light emitting structure layer 130 may further include a third conductive type, for example, an N-type semiconductor layer, on the fourth conductive type semiconductor layer 133. Accordingly, the second light emitting structure layer 130 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
A first electrode layer 138 may be formed on the second light emitting structure layer 130 and the first electrode layer 138 may be formed by sputtering and / or vapor deposition. The first electrode layer 138 is a current diffusion layer, and includes a light-transmitting material. The first electrode layer 138 may be formed of a transparent conductive layer such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), AZO (aluminum zinc oxide), IZTO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. As another example, the first electrode layer 138 may be formed of an ohmic contact layer, and the material may include at least one of In, Zn, Sn, Ni, Pt, and Ag. The first electrode layer 138 may transmit light at a thickness of several angstroms or more and may not interfere with light extraction.
The first electrode layer 138 may be formed to be 50% or more of the upper surface area of the fourth conductive type semiconductor layer 133, but the present invention is not limited thereto.
14 to 16 are views showing a process of forming the third light emitting portion.
Referring to FIG. 14, a third light emitting structure layer 140 is formed on a third substrate 102. A plurality of compound semiconductor layers may be formed on the third substrate 103. The third substrate 102 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, GaAs and Ga 2 O 3 . A concave-convex structure may be formed on the third substrate 103, and the concave-convex structure may be formed in a lens shape, a stripe shape, or the like.
A structure (for example, a pattern shape, a column shape, or the like) for improving the crystal structure and the light extraction efficiency using compound semiconductors (for example, ZnO, GaN) of Group 2 or Group 6 elements on the third substrate 103 .
A buffer layer and / or an undoped semiconductor layer may be formed on the third substrate 103, but the present invention is not limited thereto.
A third light-transmitting support layer may be formed between the third substrate 103 and the third light-emitting structure layer 140, and the third light-transmitting support layer may be formed of a material such as sapphire . For convenience of explanation, the third light emitting structure layer 140 is grown on the third substrate 103.
The third light emitting structure layer 140 includes a fifth conductive semiconductor layer 141, a third active layer 142 and a sixth conductive semiconductor layer 143. The fifth conductive semiconductor layer 141, For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like, which are compound semiconductors of group III-V elements doped with the first conductive type dopant. The third active layer 142 is formed on the third conductive type semiconductor layer 141 and may be formed of a compound semiconductor of Group III-V elements.
The third active layer 142 may have a single or multiple quantum well structure, or may have a quantum wire structure or a quantum dot structure. The second active layer 132 may include a well layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? y Ga 1 -x- y N (0? x? 1, 0? y? 1, 0? x + y? 10? x? 1, 0? y? A conductive clad layer may be formed on and / or below the fourth active layer 142. The conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the conductive clad layer may be higher than the band gap of the barrier layer.
The fifth conductive semiconductor layer 141 may be an N-type semiconductor layer, the sixth conductive semiconductor layer 143 may be a P-type semiconductor layer, or may be formed in a reverse structure thereof. have. In addition, the third light emitting structure layer 140 may further include a third conductive type, for example, an N-type semiconductor layer, on the sixth conductive type semiconductor layer 143. Accordingly, the third light emitting structure layer 140 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
A second electrode layer 148 may be formed on the third light emitting structure layer 140 and the second electrode layer 148 may be formed by sputtering and / or vapor deposition. The second electrode layer 148 is a current diffusion layer, and includes a light-transmitting material. The second electrode layer 148 may be formed of a transparent conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum nitride zinc oxide (IZON), indium zinc oxide (IZTO) (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), IrO x, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. As another example, the second electrode layer 148 may be formed of an ohmic contact layer, and the material may include at least one of In, Zn, Sn, Ni, Pt, and Ag. The second electrode layer 148 may transmit light at a thickness of several angstroms or more and may not interfere with light extraction.
The second electrode layer 148 may be formed to be 50% or more of the upper surface area of the sixth conductive type semiconductor layer 143, but the present invention is not limited thereto.
A temporary substrate 150 is formed on the second electrode layer 148, and the temporary substrate 150 may be formed of one or more layers. The temporary substrate 150 may be formed in the same manner as the sputtering or vapor deposition method, or may be attached as a separate sheet, but the present invention is not limited thereto.
The temporary substrate 150 includes a first protective layer 151, a second protective layer 152, a sacrificial layer 153, a diffusion layer 154, and a support layer 155. The first passivation layer 151 may be formed of an insulating material or a metallic material and may be an insulating material such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , As shown in FIG. The first passivation layer 151 protects the third light emitting structure layer 140 from an external impact.
A second passivation layer 152 is formed on the first passivation layer 151 and the second passivation layer 152 is disposed between the first passivation layer 151 and the sacrifice layer 153, It is possible to protect the impact and damage that may be caused by the above. The second passivation layer 152 may include at least one of In, Sn, Ag, Nb, Ni, Au, and Cu. The second passivation layer 152 may include at least one metal layer, and may be formed using sputtering, vapor deposition, plating, or the like.
A sacrificial layer 153 is formed on the second passivation layer 152 and the sacrificial layer 153 may include a material having a band gap energy at least higher than the band gap energy of the diffusion layer 154. The sacrificial layer 153 includes an insulating material, and the insulating material may include at least one selected from the group consisting of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , The band gap energy of the SiO 2 is about 8.9 eV, and the band gap energy of the Al 2 O 3 is about 8 eV.
The diffusion layer 154 may be formed of a material lower than the band gap energy and the laser energy of the sacrificial layer 153. The diffusion layer 154 includes a material such as ITO, ZnO, IZO, or TiN, and the band gap energy thereof is about 2.0 to 7.0 Ev.
A support layer 155 is formed on the sacrificial layer 154 and the support layer 155 includes at least one of an insulating material such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , and Al 2 O 3 can do. The support layer 155 may be formed of a material having a band gap energy greater than that of the laser and a band gap energy of the diffusion layer 154.
The support layer 155 is formed to have a thickness of at least 30 μm or more, and supports the second substrate 102 when the second substrate 102 is removed.
Each of the sacrificial layer 153, the diffusion layer 154, and the support layer 155 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.
14 and 15, the temporary substrate 150 is disposed on the base, and the third substrate 103 is removed by a physical lift-off or chemical lift-off method. The physical lift-off method may be separated from the semiconductor layer by irradiating the third substrate 103 with a laser. The chemical lift-off method can separate the third substrate 103 by etching the gap between the semiconductor layer and the substrate or between the semiconductor layers using a wet etching solution.
When the third substrate 103 is removed, at least one of the buffer layer, the undoped semiconductor layer, and the fifth conductive type semiconductor layer 141 may be exposed. The buffer layer and the undoped semiconductor layer may be removed, and the removal method may use wet etching.
The upper surface of the fifth conductive type semiconductor layer 141 is an N-face, and may be formed as a light extracting structure by wet etching or the like.
Referring to FIG. 16, a third light-transmitting supporting layer 145 is formed on the fifth conductive type semiconductor layer 141, and the third light-transmitting supporting layer 145 is formed to have a predetermined thickness for emitting light. The thickness may be about 1 to 200 mu m. The third light-transmitting supporting layer 145 may not be formed, but the present invention is not limited thereto.
The third light-transmitting support layer 145 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the third light-transmitting supporting layer 145 may include (ITO), indium zinc oxide (IZO), IZON (indium zinc oxide), IZO (indium zinc oxide), IZO (indium zinc oxide) , IGTO (indium gallium tin oxide), ATO (antimony tin oxide), and the like. The third light-transmitting supporting layer 145 may be formed of a Group III-V compound semiconductor and may be used as a supporting layer without removing the undoped semiconductor layer, for example.
A hole 146A is formed in the third transparent support layer 145 and the hole 146A extends further downward than the upper surface of the fifth conductive semiconductor layer 141. [ A second connection electrode 136 may be formed in the hole 146A, and the second connection electrode 136 may include an ohmic metal and a bonding metal. The second connection electrode may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, And may be formed of at least two metal layers. The second connecting electrode 136 includes an ohmic portion M 1, a connecting portion M 2 and a bonding portion M 3. The ohmic portion M 1 is formed of a material such as Cr, V, W, TI, Type semiconductor layer 141. The connection portion M2 is formed of a material such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, M3, and the bonding portion M3 is formed of a metal such as Au and disposed between the connection portion M2 and the fourth bonding layer 147. [
The second connection electrodes 136 may be formed in one or a plurality of numbers, and the number of the second connection electrodes 136 can smoothly supply current.
A fourth bonding layer 147 is formed on the second connection electrode 136 and the fourth bonding layer 147 is contacted on the third connection electrode 146. The fourth bonding layer 147 may be a circular, A curved shape, and may be formed in a shape corresponding to the third bonding layer.
The fourth bonding layer 147 may include at least one of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au. Also, the fourth bonding layer 147 may be a eutectic metal, and may be an alloy such as Au / Sn, SnPb and Pb-free solder, but is not limited thereto.
The fourth bonding layer 147 is disposed on the side opposite to the second electrode layer 148 with respect to the third light emitting structure layer 140 and may be formed to have a size that does not disturb light extraction. The fourth bonding layer 147 may be formed in an area of at least 50% of the bottom area of the third light emitting structure layer 140, and preferably 10% or less of the bottom area of the third light emitting structure layer 140.
The structure of FIG. 16 is an example of the third light emitting portion A3 and can be described as at least one chip structure.
Referring to FIG. 17, the second light emitting portion A2 of FIG. 13 and the third light emitting portion A3 of FIG. 16 are arranged to face each other. The fourth bonding layer 147 of the third light emitting portion A3 is aligned on the third bonding layer 139 of the second light emitting portion A2 and the third bonding layer 139 and the fourth bonding Layer 147 to each other. The third bonding layer 139 and the fourth bonding layer 147 may further include a bonding material, but the present invention is not limited thereto.
The first electrode 138 and the third transparent support layer 145 may be spaced apart from each other and may be formed as an empty region therebetween.
The region 140 between the first transmissive support layer 125 and the second transmissive support layer 135 may be filled with an insulating material or other transmissive material, but is not limited thereto.
The second light emitting unit A2 is vertically coupled to the first light emitting unit A1.
Referring to FIGS. 17 and 18, FIG. 18 shows a structure in which the structure of FIG. 17 is reversed in the reverse direction, and the temporary substrate 150 is disposed on the base and the second substrate 102 is removed.
The second substrate 102 is removed by a physical lift-off or chemical lift-off method. The physical lift-off method may be separated from the semiconductor layer by irradiating the second substrate 102 with a laser. The chemical lift-off method can separate the second substrate 102 by etching using a wet etching solution between the semiconductor layer and the substrate or between the semiconductor layers.
When the second substrate 103 is removed, at least one of the buffer layer, the undoped semiconductor layer, and the third conductive semiconductor layer 131 may be exposed. The buffer layer and the undoped semiconductor layer may be removed, and the removal method may use wet etching.
The upper surface of the third conductive type semiconductor layer 131 is an N-face, and may be formed as a light extraction structure by wet etching or the like.
Referring to FIG. 19, a second light-transmitting support layer 135 is formed on the third conductive type semiconductor layer 131, and the second light-transmitting support layer 135 is formed to have a predetermined thickness for light emission. The thickness may be about 1 to 200 mu m. The second light-transmitting supporting layer 135 may not be formed, but the present invention is not limited thereto.
The second light-transmitting support layer 135 may be formed of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like. As another example, the second light-transmitting support layer 135 (ITO), indium zinc oxide (IZO), IZON (indium zinc oxide), IZO (indium zinc oxide), IZO (indium zinc oxide) , IGTO (indium gallium tin oxide), ATO (antimony tin oxide), and the like. The second light-transmitting support layer 135 may be formed of a Group III-V compound semiconductor, and may be used as a support layer without removing the undoped semiconductor layer, for example.
A hole 136A is formed in the second transmissive support layer 135 and the hole 136A extends further downward than the upper surface of the third conductive type semiconductor layer 131. [ A second connection electrode 136 may be formed in the hole 136A, and the second connection electrode 136 may include an ohmic metal and a bonding metal. The second connection electrode 136 may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, And may be formed of at least two metal layers. The second connecting electrode 136 includes an ohmic portion M 1, a connecting portion M 2 and a bonding portion M 3. The ohmic portion M 1 is formed of a material such as Cr, V, W, TI, Type semiconductor layer 131. The connection portion M2 is formed of a material such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, M3. The bonding portion M3 is formed of a metal such as Au, and is disposed between the connection portion M2 and the second bonding layer 137. As shown in FIG.
The second connection electrodes 136 may be formed in one or a plurality of numbers, and the number of the second connection electrodes 136 can smoothly supply current.
A second bonding layer 137 is formed on the second connection electrode 136 and the second bonding layer 137 is contacted on the second connection electrode 136. The second bonding electrode 137 is formed of a circular, A curved shape, and may be formed in a shape corresponding to a part of the first bonding layer.
The second bonding layer 137 may include at least one of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au. In addition, the second bonding layer 137 may be a eutectic metal, and may be an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.
The second bonding layer 137 may be formed on the surface of the second light emitting structure layer 130 in an area of at least 70%, and preferably 30% or less.
20 and 21, the temporary substrate 150 is removed. At least the support layer 155 of the layers 151-155 of the temporary substrate 150 is removed by a physical lift off method and / or a chemical lift off method.
The physical lift-off method irradiates the laser through the support layer 155 and the diffusion layer 154 between the support layer 155 and the sacrifice layer 153 is made of a material smaller than the laser energy, and the support layer 155 And the sacrificial layer 153. Therefore, the laser beam is absorbed as thermal energy by the laser, and decomposed by the thermal energy, thereby separating the support layer 155. At least a portion of the diffusion layer 154 may be separated when the support layer 155 is separated.
As another example, a laser of a predetermined wavelength may be condensed in the region of the sacrificial layer 153 between the second protective layer 152 and the diffusion layer 154, and the sacrificial layer 153 Can be separated. So that the support layer 155 can be separated with other layers.
The first passivation layer 151 and the second passivation layer 152 may prevent the second light emitting structure layer 130 from being damaged by the laser lift off process.
When the supporting layer 155 and the diffusion layer 154 are partially separated, the layers 151, 152 and 153 on the second electrode layer 148 are selectively etched away as shown in FIG. For example, the sacrificial layer 153, the second passivation layer 152, and the first passivation layer 151 may be removed by wet etching, and may be removed by dry etching, if necessary.
Referring to FIGS. 22 and 23, when the temporary substrate is removed, the electrode 149 is formed on the second electrode layer 148. The electrode 149 is formed with a width smaller than the width of the second electrode layer 148, and includes a pad, a pad, and an electrode pattern connected thereto. The electrode pattern includes a pattern of a shape branched outwardly and / or inwardly in at least one direction from the pad, and can diffuse the current. The electrode 149 may be formed by selectively using a deposition method, a sputtering method, and a plating method.
A power supply of the first polarity may be supplied through the support member 115 or the conductive layer 110 and a power supply of the second polarity may be supplied through the electrode 149. [ And the power of the third polarity may be supplied through the other side 127 of the first bonding layer 127. The first polarity and the second polarity are the same polarity, and the third polarity has a polarity opposite to the first and second polarities.
The power source of the first polarity flows to the first light emitting structure layer 120, the first connection electrode 126 and the first bonding layer 127 through the plurality of conductive layers 110, The light is emitted. The power source of the second polarity includes a third light emitting structure layer 140, a third connection electrode 146, third and fourth bonding layers 147 and 139, a second light emitting structure layer 130, a second connection electrode 136 And then flows to the fourth connection electrode 128 connected to the first bonding layer 127 through the second bonding layer 137 so that the second and third light emitting portions A2 and A3 emit light. Accordingly, the first to third light emitting structure layers 120, 130 and 140 of the light emitting portions A1, A2, and A3 emit the first light to the third light, respectively. Each of the first to third lights may be a peak wavelength of a visible light band or a peak wavelength of an ultraviolet band.
At least one of the first to third lights may be a light having a peak wavelength in the same band as the other light or a light having a peak wavelength in a different band. When the first to third lights are the peak wavelengths of the same band, the intensity of the light can be increased. If at least one of the first light and the third light is a light having a peak wavelength of a different band, the mixed light may be white light or other fourth light.
At least one of the first to third lights may include at least one of blue, green, and red wavelengths, but is not limited thereto. The band may include a spectrum of each color spectrum, e.g., blue wavelength, red wavelength, green wavelength, rather than a single peak wavelength.
24 is a circuit configuration diagram of Fig.
24, the first light emitting unit A1 is connected in parallel to the second and third light emitting units A2 and A3, and the second and third light emitting units A2 and A3 are connected in series . The anode of the first light emitting portion A1 and the anode of the third light emitting portion A3 are connected to the power supply ends T1 and T2 of the positive polarity and the anode of the second light emitting portion A2 and the first light emitting portion A1 And the cathode is commonly connected to the negative power supply terminal T3. Each of the light emitting units A1, A2, and A3 functions as a light emitting diode.
By disposing the first light emitting portion A1 and the second and third light emitting portions A2 and A3 in parallel so that the light emitting diodes having different driving conditions such as the light emitting diodes having different driving voltage characteristics are driven separately, Different light emitting diodes can be driven almost simultaneously. The embodiment has an effect that both light emitting diodes of the same kind or different kinds of light emitting diodes can be used.
25 is a modification of Fig.
Referring to FIG. 15, a current blocking layer 118 is disposed under the first light emitting structure layer 120 in a region corresponding to the first connection electrode 126. The current blocking layer 118 may also be applied to the structure of FIG.
The current blocking layer 118 is disposed under the second conductive type semiconductor layer 123 and vertically aligned with the first connection electrode 126. The current blocking layer 118 may be selected from a material having a lower conductivity than the first conductive layer 111 or a Schottky contact material, and preferably SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 And the like.
Accordingly, the current supplied to the support member 115 can flow by bypassing the shortest path with the first connection electrode 126 by the current blocking layer 118, thereby providing a current diffusion effect .
The fourth connection electrode 128 connected to the first bonding layer 127 may be disposed on the protection layer 117 along the first side of the insulation layer 119A and may be used as a pad.
The electrode 149 is disposed on the second electrode layer 148 and the electrode 149 is connected to the second electrode layer 148. The fourth connection electrode 149A connected to the electrode 149 is electrically connected to the second electrode layer 148, And may be disposed on the outside of the conductive layer 110 along the second side of the layer 119A. The fourth connection electrode 149A may be used as a pad, but is not limited thereto. The first side and the second side may be on different sides, preferably opposite sides, but are not limited thereto.
The fourth connection electrode 149A may connect at least one of the second conductive layer 112 to the fourth conductive layer 114 and the second electrode layer 148 to each other. For example, the fourth connection electrode 149A connected to the electrode 149 is connected to the second conductive layer 112, the second conductive layer 112 extends below the protection layer 117, One side 112A of the second conductive layer 112 may extend further to the outer surface of the protective layer 117. [ Accordingly, the second conductive layer 112 is disposed outside the protective layer 117, and may physically contact the fourth connection electrode 149A. As another example, the third conductive layer 113 or the fourth conductive layer 114 may be connected to the fourth connection electrode 149A.
The second conductive layer 112 and the third conductive layer 113 may be formed to be bent, but the present invention is not limited thereto.
The first portion S1 of the insulating layer 119A partially extends to the region 161 between the first light emitting portion A1 and the second light emitting portion A2, And may partially extend to a region 162 between the second light emitting portion A2 and the third light emitting portion A3.
The insulating layer 119A protects the outside of the first, second, third, and fourth light emitting structure layers 120, 130, 140 and prevents interlayer short-circuit and moisture penetration.
The insulating layer 119A may further extend around the upper surface of the sixth conductive type semiconductor layer 143. [ The refractive index of the insulating layer 119A is lower than the refractive index of the compound semiconductor layer, thereby improving the light extraction efficiency. The insulating layer (119A) may be selected from insulating materials such as SiO 2, SiO x, SiO x N y, Si 3 N 4, Al 2 O 3, TiO 2.
Fig. 26 is a circuit configuration diagram of Fig. 25. Fig.
Referring to FIG. 26, the second and second light emitting units A2 and A3 are connected in series, and are connected in parallel with the first light emitting unit A1. The cathodes of the second and first light emitting portions A2 and A1 are connected in common to the negative power source terminal T3 and the anode of the first and third light emitting portions A1 and A3 are connected to the power source terminal (T1). Such a connection scheme can drive the first to third light emitting units A1, A2, and A3 by the same driving voltage.
27 is a cross-sectional view of a light emitting device package according to the embodiment.
27, the light emitting device package 30 includes a body 20, a first lead electrode 32, a second lead electrode 33, and a third lead electrode 34 provided on the body 10, A light emitting device 100 mounted on the body 20 and electrically connected to the first to third lead electrodes 32, 33 and 34, and a molding member (40).
The body 20 may be formed of a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (e.g., MCPCB) Can be formed. The body 20 may include a through hole structure, but the present invention is not limited thereto.
A cavity 22 having a predetermined depth may be formed on the body 20 and the lead electrodes 32, 33 and 34 and the light emitting device 100 are disposed in the cavity 22. The light emitting device 100 may be a light emitting device of another embodiment, but the present invention is not limited thereto.
The upper surface of the body 20 may be flat. In this case, the cavity 22 is not formed.
The first lead electrode 32, the second lead electrode 33, and the third lead electrode 34 are electrically separated from each other to provide power to the light emitting device 100. 24, the second lead electrode 33 may be connected to the T2 terminal in FIG. 24, and the third lead electrode 34 may be connected to the T3 terminal in FIG. . The light emitting device 100 is die-bonded to the third lead electrode 34 and electrically connected thereto.
The light emitting device 100 may be connected to the first and second lead electrodes 32 and 33 through wires 27, but the present invention is not limited thereto.
In addition, the first to third lead electrodes 32, 33, and 34 may increase the light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.
The molding member 40 may include a resin material such as silicon or epoxy, and may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100. A lens may be disposed on the molding member 40, and the lens may be formed to be in contact with or non-contact with the molding member.
The light emitting device 100 emits a blue color and at least one kind of phosphor may be disposed in the molding member 40. In this case, the light emitting device 100 may be 1.5 times or more the same size as other chips having the same brightness . Further, when a plurality of colors are emitted from the light emitting device 100, target light (e.g., white) can be realized through a plurality of colors on the package, and no additional fluorescent material is added to the mold member 40, The phosphor type can be reduced.
The light emitting device package 30 may include at least one of the light emitting devices of the above-described embodiments, but the present invention is not limited thereto.
Although the package of the embodiment has been shown and described in the form of a top view, it has the effect of improving the heat dissipation characteristics, conductivity, and reflection characteristics as described above by implementing it in a side view manner. The light emitting device of the top view type or the side view type, After packaging, a lens may be formed on or adhered to the resin layer, but the present invention is not limited thereto.
Although the light emitting device 100 is packaged as shown in FIG. 27, the light emitting device 100 may be directly mounted on a board (COB) to cover the light emitting device with a molding member or a lens. A plurality of light emitting elements can be arrayed on such a board.
<Light Unit>
The light emitting device or the light emitting device package according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arrayed. The light unit includes the display device shown in Figs. 28 and 29 and the lighting device shown in Fig. 30, and includes a lighting lamp, a traffic light, a vehicle headlight, And the like.
28 is an exploded perspective view of a display device according to the embodiment.
28, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflection member 1022 But is not limited to, a bottom cover 1011.
The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.
The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >
The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.
The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 30 according to the embodiment described above and the light emitting device package 30 may be arranged on the substrate 1033 at a predetermined interval have.
The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.
The plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 30 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 30 may directly or indirectly provide light to the light-incident portion on one side of the light guide plate 1041, but the present invention is not limited thereto.
The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.
The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.
The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.
The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.
The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.
Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.
29 is a view showing a display device according to the embodiment.
29, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device package 30 is arrayed, an optical member 1154, and a display panel 1155 .
The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.
The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.
Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.
The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.
30 is a perspective view of a lighting apparatus according to an embodiment.
Referring to FIG. 30, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).
The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.
The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 mounted on the substrate 1532. A plurality of the light emitting device packages 30 may be arrayed in a matrix or at a predetermined interval.
The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.
In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.
At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one LED (Light Emitting Diode) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue or white, or a UV light emitting diode that emits ultraviolet (UV) light.
The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).
The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.
The above-described embodiments are not limited to the embodiments, but can be selectively applied to other embodiments described above, and the present invention is not limited to these embodiments.
The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
