KR20120087039A - Light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to produce target light by using light emitted from a single light emitting device. CONSTITUTION: A conductive layer(110) is formed on a supporting member(115). A plurality of light emitting structure layers which includes first to third light emitting structure layers(120,130,140) is formed on the conductive layer. A first bonding layer(127) is formed on a partial region between the first light emitting structure and the second light emitting structure. A second bonding layer(137) is formed on the partial region between the second light emitting structure layer and the third light emitting structure layer. A protective layer(117) is formed on the circumference of a lower side of the first light emitting structure layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a light emitting device package, and an illumination system.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied as light sources for various products such as keypad light emitting units, electronic displays, lighting devices, and display devices of mobile phones.

The embodiment provides a light emitting device having a plurality of active layers between an electrode and a support member.

The embodiment provides a light emitting device having a plurality of light emitting structure layers between an electrode and a support member.

The embodiment provides a light emitting device in which at least two light emitting structure layers are stacked on a support member.

The embodiment provides a light emitting device in which at least two of the plurality of light emitting structure layers are connected in series and connected in parallel with other light emitting structure layers.

The light emitting device according to the embodiment, the support member; A conductive layer on the support member; A plurality of light emitting structure layers including first to third light emitting structure layers disposed on the conductive layer in at least a vertical direction; A first bonding layer disposed in a partial region between the first light emitting structure layer and the second light emitting structure layer and electrically connected to a semiconductor layer of the same polarity of the first and second light emitting structure layers; A second bonding layer disposed in a partial region between the second light emitting structure layer and the third light emitting structure layer and electrically connected to semiconductor layers having different polarities of the first and third light emitting structure layers; An external electrode disposed on the conductive layer from the first bonding layer to be electrically opened with the conductive layer; A translucent support layer disposed on any one of above and below at least one of the first to third light emitting structure layers; And an electrode on the plurality of light emitting structure layers.

The light emitting device package according to the embodiment includes a body; A plurality of lead electrodes on the body; A light emitting device mounted on at least one of the lead electrodes and electrically connected to two other lead electrodes; And a molding member covering the light emitting device.

The light emitting device, the support member; A conductive layer on the support member; A plurality of light emitting structure layers including first to third light emitting structure layers disposed on the conductive layer in at least a vertical direction; A first bonding layer disposed in a partial region between the first light emitting structure layer and the second light emitting structure layer and electrically connected to a semiconductor layer of the same polarity of the first and second light emitting structure layers; A second bonding layer disposed in a partial region between the second light emitting structure layer and the third light emitting structure layer and electrically connected to semiconductor layers having different polarities of the first and third light emitting structure layers; An external electrode disposed on the conductive layer from the first bonding layer to be electrically opened with the conductive layer; A translucent support layer disposed on any one of above and below at least one of the first to third light emitting structure layers; And an electrode on the plurality of light emitting structure layers.

The embodiment can provide a light emitting device having improved light efficiency.

The embodiment can improve the luminous intensity of a single wavelength band emitted from one light emitting device.

The embodiment has the effect of emitting a wavelength of at least two color bands from one light emitting device.

The embodiment provides a light emitting device package capable of realizing target light using light emitted from one light emitting device.

1 is a side sectional view showing a light emitting device according to the first embodiment.
2 is a view showing another example of a light emitting structure layer in the embodiment.
3 is a view showing another structure of the light emitting structure layer in the embodiment.
4 is a view showing a light extraction structure of the light emitting structure layer in the embodiment.
5 is a view illustrating a plurality of light extraction guzole in the light emitting unit of the embodiment.
6A to 6D are views showing other examples of the bonding layer and the connection electrode in the embodiment.
7 to 23 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
24 is a circuit diagram of FIG. 1.
25 is a side sectional view showing a light emitting device according to the second embodiment.
FIG. 26 is a circuit diagram of FIG. 25.
27 is a side cross-sectional view showing a light emitting device package according to the embodiment.
28 is a diagram illustrating a display device according to an exemplary embodiment.
29 is a diagram illustrating another example of a display device according to an exemplary embodiment.
30 is a view showing a lighting apparatus according to an embodiment.

In the description of an embodiment, each layer (film), region, pattern or structure is formed to be "on" or "under" the substrate, each layer (film), region, pad or pattern. In the case described, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device 100 includes a support member 115, a conductive layer 110, a first light emitting structure layer 120, a second light emitting structure layer 130, and a third light emitting structure layer 140. Connection electrodes 126, 136, 146, bonding layers 127, 137, 139, 147, electrode layers 138, 148, electrodes 149, and translucent support layers 125, 135, and 145.

The light emitting device 100 includes at least three light emitting units A1, A2, and A3, and at least one of the light emitting units A1, A2, and A3 includes at least one light emitting structure layer, for example, an active layer. It may comprise a layer.

The light emitting device 100 may include at least three light emitting structure layers 120, 130, and 140, and the at least three light emitting structure layers 120, 130, and 140 may be coupled to each other in a vertical direction. The at least three light emitting structure layers 120, 130, and 140 include wavelength bands of the same color or wavelength bands of different colors, and the wavelength band includes at least one of a visible light band and an ultraviolet band.

The light emitting device 100 may have at least one light emitting unit A1 and at least two light emitting units A2 and A3 connected in parallel, and the at least two light emitting units A2 and A3 are connected in series. to be. Each of the light emitting units A1, A2, and A3 may include light emitting structure layers 110, 120, and 130 and an electrode structure.

The widths of the at least three light emitting structure layers 120, 130, and 130 may be the same or different widths, and preferably, the second light emitting structure layer 130 or the third light emitting structure layer may be larger than the width of the first light emitting structure layer 120. The width of the 140 may be formed at least narrowly, but is not limited thereto.

The first light emitting part A1 includes the components from the supporting member 115 to the first bonding layer 127, and the second light emitting part A2 is the third bonding layer 137 to the third bonding. The first light emitting unit A3 may include components up to the layer 139, and the third light emitting unit A3 may include components from the fourth bonding layer 147 to the electrode 149.

The support member 115 is disposed on the base side and may include a conductive material. The support member 115 may be formed of, for example, Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu-W, carrier wafers (Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.) may be selectively formed.

The support member 115 may be formed by an electroplating method, or bonded in a bonding method or a sheet form, but is not limited thereto. The support member 115 may be used as a path for supplying power and a heat radiation path. The support member 115 supports the entire light emitting device, and may have a thickness of 30 to 500 μm.

The support member 115 may be formed of an insulating support member such as ZnO and Al ₂ O ₃ materials instead of the conductive member.

At least one conductive layer 110 may be disposed on the support member 110, and a plurality of conductive layers 110 may be disposed.

The plurality of conductive layers 110 includes a first conductive layer 111, a second conductive layer 112, a third conductive layer 113, and a fourth conductive layer 114. The first conductive layer 111 may be in ohmic contact with a lower layer of the light emitting structure layer 120. The first conductive layer 111 may be disposed as an ohmic layer, but is not limited thereto.

The first conductive layer 111 may include a light-transmitting oxide or / and nitride series, for example, Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Monolayer using at least one of indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , and RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material including In, Zn, Sn, Pt, Ag, Ni, Au, Hf, and a selective combination thereof. As another example, the first conductive layer 111 may be formed in a multilayer structure using the light transmitting oxide and the metal material, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO. It may be formed in a laminated structure such as. The first conductive layer 111 may have a light transmittance of 50% or more, preferably 80% or more. A schottky material or an insulating material may be further disposed in a portion of the first conductive layer 111, and the region may be disposed in a region corresponding to the first connection electrode 126 in a vertical direction.

The second conductive layer 112 may be disposed under the first conductive layer 111 and may be formed at least thicker than the first conductive layer 111. The second conductive layer 112 may be narrower or wider than the width of the first conductive layer 111, but is not limited thereto.

The second conductive layer 112 may be disposed between the support member 115 and the first conductive layer 111 and may efficiently reflect incident light. The second conductive layer 112 includes a reflective layer, and may preferably include at least one highly reflective metal. The second conductive layer 112 may be formed of a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. The second conductive layer 112 may include a metal having a reflectance of 50% or more, and may preferably include a metal having a reflectance of 90% or more.

A third conductive layer 113 may be disposed below the second conductive layer 112, and the third conductive layer 113 may be disposed between the second conductive layer 112 and the support member 115. . The third conductive layer 113 may be used as a barrier layer between the second conductive layer 112 and the support member 115. The third conductive layer 113 may be formed of one or more of Ni, Pt, Ti, W, V, Fe, and Mo, and may be formed in a single layer or multiple layers.

The outer side of the third conductive layer 113 may extend below the protective layer 117. The second conductive layer 112 may extend below the protective layer 117, and an outer side of the third conductive layer 113 may be disposed below the second conductive layer 112.

The fourth conductive layer 114 may be used as a bonding layer or a seed layer. The fourth conductive layer 114 is In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd , Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu- Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al -Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu It may be formed of a layer containing any one or two or more of -Cu 2 O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P, Pd-Ni.

The fourth conductive layer 114 may be disposed between the third conductive layer 113 and the support member 115 to strengthen the adhesive force. At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but is not limited thereto.

The passivation layer 117 is disposed around the bottom surface of the light emitting structure layer 120. The passivation layer 117 may be defined as a channel layer disposed around an outer circumference of the light emitting structure layer 120. The protective layer 117 includes a light transmissive material, and may be preferably formed of a conductive material or an insulating material. The protective layer 117 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), or indium aluminum zinc oxide (IZO). , Optionally, indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, etc. It may be formed, but not limited thereto.

An inner portion of the protective layer 117 is disposed below the light emitting structure layer 120, and an outer portion thereof further extends outward from a side surface of the light emitting structure layer 120.

The first light emitting structure layer 120 includes a plurality of compound semiconductor layers, for example, a group III-V compound semiconductor. The first light emitting structure layer 120 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In _x Al _y Ga _{1 -} and a semiconductor material having a compositional formula of _{x- y} N (0 ≦ x ≦ 1, 0 ≦ _y ≦ 1, 0 ≦ x + y ≦ 1).

The first light emitting structure layer 120 may include a first conductive semiconductor layer 121 doped with a first conductive dopant, a first active layer 122, and a second conductive semiconductor layer doped with a second conductive dopant ( 123). Other layers may be further arranged between each layer, but not limited thereto.

The first active layer 122 may be disposed under the first conductive semiconductor layer 121, and the second conductive semiconductor layer 123 may be disposed under the first active layer 122. Here, the first conductive semiconductor layer 121 is an n-type semiconductor layer, the n-type semiconductor layer may include an N-type dopant, such as Si, Ge, Sn, Se, Te, and the like, the second conductive type The semiconductor layer 122 is a p-type semiconductor layer, and the p-type semiconductor layer may include a P-type dopant such as Mg and Zn. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.

The first active layer 122 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The first active layer 122 is a Group III -5-group using a compound semiconductor material of the element comprising a well layer and a barrier layer, the well layer is _{In x Al y Ga 1 -x- y} N (0≤x≤ 1, 0≤y≤1, formed by a composition formula of 0≤x + y≤1), and wherein the barrier layer is _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0? X + y? 1).

The first active layer 122 may be formed by, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, or a period of an InGaN well layer / InGaN barrier layer, but is not limited thereto. Do not. A conductive clad layer may be formed on or under the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

In addition, the first light emitting structure layer 120 may further include a semiconductor layer having a polarity opposite to that of the second conductive type under the second conductive type semiconductor layer 123, and the half layer may be formed of the second conductive type. When the semiconductor layer 123 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the first light emitting structure layer 120 may be implemented as any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The lower surface of the second conductive semiconductor layer 123 may be in ohmic contact with the first conductive layer 111.

A first transparent support layer 125 is disposed between the light emitting structure layer 120 and the first electrode 127, and the first transparent support layer 125 has a predetermined thickness on the first conductive semiconductor layer 121. It can be formed as.

The first translucent support layer 125 may include an insulating material or a conductive material, and may be formed of a material having a transmittance of at least 70% or more.

The first transparent support layer 125 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the first translucent support layer 125 may include an oxide or nitride, Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).

The first light transmitting support layer 125 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The first translucent support layer 125 is provided as a space or a spacer in which the light emitted from the first active layer 122 can be sufficiently diffused.

The first translucent support layer 125 may further extend to the side surface as well as the top surface of the first light emitting structure layer 120. The first translucent support layer 125 may be formed on the side surface of the first light emitting structure layer 120 by using an insulating material, thereby preventing the short circuit between the first light emitting structure layer 120.

The first bonding layer 127 may be disposed on the first translucent support layer 125, and the first bonding layer 127 may be formed of a metal layer or pattern. The first bonding layer 127 may be a seed metal.

The first bonding layer 127 is disposed on the first transparent support layer 125 and is connected to the first connection electrode 126. The first connection electrode 126 may be disposed under the first bonding layer 127, and part of the first connection electrode 126 is in contact with the first conductive semiconductor layer 121.

The first bonding layer 127 is formed in a portion of the first transparent support layer 125, wherein the first transparent support layer 125 is at least 50% of the upper surface area of the first light emitting structure layer 120, Preferably 85% or more.

The first connection electrode 126 may be disposed in one or a plurality, and the plurality of first connection electrodes 126 may be spaced apart from each other. The first connection electrode 126 penetrates through the first translucent support layer 125 through a through hole or via structure.

The lower end of the first connection electrode 126 may be disposed below the top surface of the first conductive semiconductor layer 121, and the contact area with the first conductive semiconductor layer 121 may be increased. have.

The first connection electrode 126 includes an ohmic electrode, and Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh It may include at least one of Cu, and may be formed of at least two layers. The first connection electrode 126 includes an ohmic part, a connection part, and a bonding part, and the ohmic part contacts the first conductive semiconductor layer 121 with a material such as Cr, V, W, or TI, and the connection part Pt, Pd, Ru, Rh, V, Ti, Al, Cu, W is disposed between the ohmic portion and the bonding portion, the bonding portion is a metal such as Au and the connecting portion and the first bonding layer ( 127).

The first bonding layer 127 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the first bonding layer 127 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

An insulating layer 119 is formed on side surfaces of the first light-transmitting support layer 125 and the first light-emitting structure layer 120 to protect the layers of the light-emitting structure layer 120. remind

The external electrode 128 connected to the first bonding layer 127 extends over the protective layer 117 along the first side surface of the insulating layer 119 and may be used as a pad. The external electrode 128 is disposed to be electrically open with the conductive layer 110. The first bonding layer 127 may connect the first light emitting part A1 and the second and third light emitting parts A2 and A3 in parallel.

A second bonding layer 137 is disposed under the second light emitting structure layer 130 or the second transparent support layer 135, and the second bonding layer 137 is bonded to the first bonding layer 127 and electrically connected thereto. Is connected. The second bonding layer 137 may be formed in a layer or a pattern, and may be formed in a form corresponding to a portion of the first bonding layer 127. The second bonding layer 137 may have a pattern having the same shape as a portion of the first bonding layer 127 and may be bonded to each other, but is not limited thereto. The second bonding layer 137 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the second bonding layer 137 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The second bonding layer 137 is formed in a portion of the second transparent support layer 135, and the second transparent support layer 135 is at least 50% of the top surface area of the second light emitting structure layer 130, Preferably 85% or more.

The second connection electrode 136 includes an ohmic electrode, and Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh It may include at least one of Cu, and may be formed of at least two layers. The second connection electrode 136 includes an ohmic part, a connection part, and a bonding part, and the ohmic part contacts the third conductive semiconductor layer 131 with a material such as Cr, V, W, or TI, and the connection part Pt, Pd, Ru, Rh, V, Ti, Al, Cu, W is disposed between the ohmic portion and the bonding portion, the bonding portion is formed of a metal such as Au, the connecting portion and the second bonding layer Disposed between 137.

The second connection electrode 136 is disposed above the bottom surface of the third conductive semiconductor layer 131. The second connection electrode 136 may be disposed in one or a plurality, and the plurality of second connection electrodes 136 may be spaced apart from each other. The second connection electrode 136 penetrates through the second translucent support layer 135 through a through hole or via structure.

A second translucent support layer 135 is disposed between the second bonding layer 137 and the second light emitting structure layer 130, and the second translucent support layer 135 includes an insulating material or a conductive material, and at least 70 It may be formed of a material having a transmittance of more than%.

The second translucent support layer 135 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the second translucent support layer 135 may include an oxide or nitride, and may include indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO Nitride), aluminum zinc oxide (AZO), or indium (IZTO). It may be formed of a conductive material such as zinc tin oxide (IAZO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and antimony tin oxide (ATO).

The second translucent support layer 135 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The second translucent support layer 135 is provided as a space or a spacer in which the light emitted from the second active layer 132 can be sufficiently diffused.

The second translucent support layer 135 may further extend to the side surface as well as the top surface of the second light emitting structure layer 130. The second translucent support layer 135 may be formed on the side surface of the second light emitting structure layer 130 by using an insulating material, thereby preventing the short circuit between the second light emitting structure layer 130.

The first translucent support layer 125 may be spaced apart from the second translucent support layer 135, and a gap thereof may be spaced apart by the thickness of the first bonding layer 127 and the second bonding layer 137. . The region 161 between the first transparent support layer 125 and the second transparent support layer 135 may be a spacer, and may be filled with an empty area and / or an insulating material. Any one of the first transparent support layer 125 and the second transparent support layer 135 may be removed, but is not limited thereto.

A second light emitting structure layer 130 is disposed on the second light transmitting support layer 135, and the second light emitting structure layer 130 includes a plurality of compound semiconductor layers, for example, a group III-V compound semiconductor. do. The second light emitting structure layer 130 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In _x Al _y Ga _{1 -} and a semiconductor material having a compositional formula of _{x- y} N (0 ≦ x ≦ 1, 0 ≦ _y ≦ 1, 0 ≦ x + y ≦ 1).

The second light emitting structure layer 130 may include a third conductive semiconductor layer 131 doped with a first conductive dopant, a second active layer 132, and a third conductive semiconductor layer doped with a second conductive dopant ( 133). Another layer may be further disposed between the layers, but is not limited thereto.

The second active layer 132 may be disposed on the third conductive semiconductor layer 131, and the fourth conductive semiconductor layer 133 may be disposed on the second active layer 132. The third conductive semiconductor layer 131 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like, and the fourth conductive type The semiconductor layer 133 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a P-type dopant such as Mg and Zn. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.

The second active layer 132 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The second active layer 132 is a group III -5-group using a compound semiconductor material of the element includes a well layer and a barrier layer, the well layer is _{In x Al y Ga 1 -x- y} N (0≤x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1, the barrier layer is formed of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1 , 0 ≦ x + y ≦ 1).

The second active layer 132 may be formed by, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. I do not. A conductive clad layer may be formed on or under the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

In addition, the second light emitting structure layer 130 may further include a semiconductor layer having a polarity opposite to that of the fourth conductive type on the fourth conductive type semiconductor layer 133, and the semiconductor layer may be, for example, the fourth conductive type. When the conductive semiconductor layer 133 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the second light emitting structure layer 130 may be implemented as any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The second active layer 132 may be formed of the same compound semiconductor or different compound semiconductors as the first active layer 122. The second active layer 132 may emit light having a first peak wavelength, and the first active layer 122 may emit light having a second peak wavelength. The light of the first peak wavelength and the light of the second peak wavelength may be the same wavelength band or different wavelength bands, but are not limited thereto.

The first electrode layer 138 may be formed on the fourth conductive semiconductor layer 133, and the first electrode layer 138 may be formed of a transparent conductive layer. The light transmissive conductive layer includes an oxide or nitride, indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO Nitride), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / It may include at least one of ITO. As another example, the first electrode layer 138 may include an ohmic contact material, and may include one or more of In, Zn, Sn, Ni, Pt, and Ag.

The first electrode layer 138 may be formed with at least 50% or more of the upper surface area of the fourth conductive semiconductor layer 133 and diffuse current. In addition, the first electrode layer 138 may improve the extraction efficiency of the second light emitted from the second active layer 132.

A third bonding layer 139 is formed on the first electrode layer 138, and the third bonding layer 139 is at least one of materials disclosed as the first bonding layer 127 and the second bonding layer 137. It may include.

A fourth bonding layer 147 is formed on the third bonding layer 139, and the third bonding layer 139 and the fourth bonding layer 147 may have a circular or polygonal shape, and at least a portion thereof. May be formed in a pattern of the same shape for bonding to each other.

The fourth bonding layer 147 may be disposed under the third light emitting structure layer 140 or the third transparent support layer 145. In an embodiment, a third transmissive support layer 145 may be disposed between the fourth bonding layer 147 and the third light emitting structure layer 140. Here, the third and fourth bonding layers 139 and 147 correspond to a portion of the third transparent support layer 145, and the third transparent support layer 145 is formed on an upper surface area of the third light emitting structure layer 140. At least 50%, preferably at least 85%.

The third transparent support layer 145 may include an insulating material or a conductive material, and may be formed of a material having a transmittance of at least 70% or more.

The third transparent support layer 145 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the third translucent support layer 145 may include an oxide or nitride, and may include indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), aluminum zinc oxide (AZO), or indium (IZTO). It may be formed of a conductive material such as zinc tin oxide (IAZO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and antimony tin oxide (ATO).

The third light transmitting support layer 145 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The third translucent support layer 145 is provided as a space or a spacer in which the light emitted from the third active layer 142 can be sufficiently diffused.

The third translucent support layer 145 may further extend to the side surface as well as the bottom surface of the third light emitting structure layer 140. The third translucent support layer 145 may be formed on the side surface of the third light emitting structure layer 140 by using an insulating material, thereby preventing the short circuit between the third light emitting structure layer 140.

The third translucent support layer 145 may be spaced apart from the first electrode layer 138, and the gap may be spaced apart from each other by about the thickness of the third bonding layer 139 and the fourth bonding layer 147.

A third connection electrode 146 connecting the fourth bonding layer 147 and the fifth conductive semiconductor layer 141 is disposed in the third transparent support layer 145, and the third connection electrode 146 is disposed therein. ) Includes an ohmic electrode and includes at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. can do. The third connection electrode 146 includes an ohmic part, a connection part, and a bonding part, and the ohmic part contacts the fifth conductive semiconductor layer 141 with a material such as Cr, V, W, and TI, and the connection part Pt, Pd, Ru, Rh, V, Ti, Al, Cu, W is disposed between the ohmic portion and the bonding portion, the bonding portion is formed of a metal such as Au, the connecting portion and the fourth bonding layer Disposed between 147.

The third connection electrode 146 is disposed above the bottom surface of the fifth conductive semiconductor layer 141. The third connection electrode 146 may be disposed in one or a plurality, and the plurality of third connection electrodes 146 may be spaced apart from each other. The third connection electrode 146 penetrates through the third transparent support layer 145 through a through hole or via structure.

Positions of the first and second connection electrodes 126 and 136 may be disposed to correspond to each other in the vertical direction or may be disposed to be offset from each other. The second connection electrode 136 and the third connection electrode 146 may correspond to each other in a vertical direction or may be disposed to be offset from each other.

The region 162 between the third transparent support layer 145 and the first electrode layer 138 may be a spacer and may be filled with an empty region and / or an insulating material. At least one of the first, second, and third transparent support layers 125, 135, and 145 may not be formed, but is not limited thereto.

A third light emitting structure layer 140 is disposed on the third light transmitting support layer 145, and the second light emitting structure layer 140 includes a plurality of compound semiconductor layers, for example, a group III-V compound semiconductor. do. The fourth light emitting structure layer 140 is, for example, GaN, AlN, AlGaN, InGaN , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and can be selected from AlGaInP, preferably In _x Al _y Ga _{1 -} and a semiconductor material having a compositional formula of _{x- y} N (0 ≦ x ≦ 1, 0 ≦ _y ≦ 1, 0 ≦ x + y ≦ 1).

The third light emitting structure layer 140 may include a fifth conductive semiconductor layer 141 doped with a first conductive dopant, a third active layer 142, and a sixth conductive semiconductor layer doped with a second conductive dopant ( 143). Another layer may be further disposed between the layers, but is not limited thereto.

A fifth conductive semiconductor layer 141 is disposed on the third transparent support layer 145, a third active layer 142 is disposed on the fifth conductive semiconductor layer 141, and the third active layer 142 is disposed on the third transparent support layer 145. The sixth conductive semiconductor layer 143 may be disposed thereon. The fifth conductive semiconductor layer 131 may be an n-type semiconductor layer, and the n-type semiconductor layer may include an n-type dopant such as Si, Ge, Sn, Se, Te, and the like, and the sixth conductive type The semiconductor layer 143 may be a p-type semiconductor layer, and the p-type semiconductor layer may include a P-type dopant such as Mg and Zn. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type.

The third active layer 142 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The third active layer 142 may include a well layer and a barrier layer using a compound semiconductor material of Group III-V elements, and the well layer may include In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1, the barrier layer is formed of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1 , 0 ≦ x + y ≦ 1).

The third active layer 142 may be formed by, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. It doesn't. A conductive clad layer may be formed on or under the third active layer 142, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

In addition, the third light emitting structure layer 140 may further include a semiconductor layer having a polarity opposite to that of the fourth conductive type on the sixth conductive type semiconductor layer 143, and the semiconductor layer may be, for example, the sixth type. When the conductive semiconductor layer 143 is a p-type semiconductor layer, it may be formed of an N-type semiconductor layer. Accordingly, the third light emitting structure layer 140 may be implemented as any one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The third active layer 142 may be formed of the same compound semiconductor or different compound semiconductors as at least one of the first active layer 122 and the second active layer 132. The first active layer 122 emits first light, the second active layer 132 may emit second light, and the third active layer 142 may emit third light. At least one of the first to third lights may have the same peak wavelength as or different from the peak wavelength of other light, but is not limited thereto.

The second electrode layer 148 may be formed on the sixth conductive semiconductor layer 143, and the second electrode layer 148 may be formed of a light transmissive conductive layer. The light transmissive conductive layer includes an oxide or nitride, indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO Nitride), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / It may include at least one of ITO. As another example, the second electrode layer 148 may include an ohmic contact material, and may include one or more of In, Zn, Sn, Ni, Pt, and Ag.

The second electrode layer 148 may be formed to at least 50% or more of an upper surface area of the sixth conductive semiconductor layer 143, and diffuse current. In addition, the second electrode layer 148 may improve the extraction efficiency of the third light emitted from the third active layer 142.

An electrode 149 is formed on the fourth electrode layer 148, and the electrode 149 may be a pad or may include a pad and an electrode pattern connected thereto. The electrode 149 may further include a structure such as an arm type pattern, a branched pattern, and a finger pattern as a current diffusion structure.

In the light emitting device 100, the conductive layer 110 is disposed on the support member 115, and the first light emitting structure layer 120 is disposed between the conductive layer 110 and the first bonding layer 127. Two light emitting structure layers 130 and 140 are disposed between the second bonding layer 137 and the electrode 149.

At least one of the first and second translucent supporting layers 125 and 135 may be disposed between the first light emitting structure layer 120 and the second light emitting structure layer 130, and below the third light emitting structure layer 140. The third translucent support layer 145 is disposed on the substrate.

The support member 115 and the conductive layer 110 may be a first electrode, the fourth connection electrode 128 connected to the first bonding layer 127 may be a second electrode, and the electrode ( 149 may be divided into third electrodes. In addition, each bonding layer may be used as an electrode.

The first conductive semiconductor layer 121 may be formed to be at least thicker than a thickness of the second conductive semiconductor layer 123 or the first active layer 122, and the third conductive semiconductor layer 131 may be a fourth thickness. It may be formed at least thicker than the thickness of the conductive semiconductor layer 133 or the second active layer 132, the fifth conductive semiconductor layer 141 is the sixth conductive semiconductor layer 143 or the third active layer 142. It may be formed at least thicker than the thickness of). Each of the transparent support layers 125, 135, and 135 may be disposed on a side of the semiconductor layers of the light emitting structure layers 120, 130, and 140 that are thicker than other layers, for example, the first, third, and fifth conductive semiconductor layers 121, 131, and 141.

In addition, an upper surface of the first conductive semiconductor layer 121 is an N-face, a lower surface of the first conductive semiconductor layer 131 is an N-face, and the first and third conductive semiconductor layers 121 and 131. N-faces of the may be arranged in a structure facing each other.

The refractive index of each of the translucent support layers 125, 135, and 145 includes 1.3 to 2.3. The translucent support layers 125, 135, and 145 have a refractive index at least lower than the refractive index (eg, 2.45) of the compound semiconductor, eg, GaN, above or below each light emitting structure layer 120, 130. Can be.

FIG. 2 is a diagram illustrating another example of each light emitting structure layer of FIG. 1.

Referring to FIG. 2, the first conductive semiconductor layer 121 of the first light emitting structure layer includes a first semiconductor layer L1 and a second semiconductor layer L2, and the first semiconductor layer L1 is _{in x Al y Ga 1 -x- y} N may include a semiconductor layer and / or a super lattice structure having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ). Super lattice structure of said first semiconductor layer (L1) is the having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) A second layer having a compositional formula of In _x Al _y Ga _{1 -xy} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), having a band gap different from that of the first layer; Layer. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged, and includes a structure such as a GaN / InGaN structure, GaN / AlGaN, and the like. In the superlattice structure, each layer may have a plurality of layers or more and may be stacked in two or more pairs.

It said second semiconductor layer (L2) is _{In x Al y Ga 1 -x- y} N semiconductor layer or / having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) , and It may include a superlattice structure. The second superlattice structure of a semiconductor layer (L2) comprises a having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) first layer, the first layer has a different band gap and having a compositional formula of _{in x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It includes a second layer. The superlattice structure is a structure in which the first layer and the second layer are alternately arranged, and includes, for example, a structure of InGaN / GaN structure, AlGaN / GaN, or the like. The superlattice structure may have a plurality of layers or more and may be stacked in two pairs or more.

The second conductive semiconductor layer 123 includes a third semiconductor layer L3 and a fourth semiconductor layer L4, and the third semiconductor layer L3 includes In _x Al _y Ga _{1 -x- y} N. And a semiconductor layer or superlattice structure having a compositional formula of (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The superlattice structure may include a stacked structure of AlGaN / GaN. The fourth semiconductor layer (L4) is _{In x Al y Ga 1 -x- y} N semiconductor layer or / having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) , and It may include a superlattice structure.

The embodiment may include at least one of the first conductive semiconductor layer 121 of the first light emitting structure layer, as well as the third conductive semiconductor layer of the second light emitting structure layer and the fourth conductive semiconductor layer of the third light emitting structure layer. One layer can be formed in a superlattice structure. In addition to the second conductive semiconductor layer 123 of the first light emitting structure layer, at least one of the fourth conductive semiconductor layer of the second light emitting structure layer and the sixth conductive semiconductor layer of the third light emitting structure layer may be formed. It can be formed into a superlattice structure. The superlattice structure has at least two layers having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) or different materials from each other. It can be stacked with different band gap energies.

Referring to FIG. 3, another example of the first light emitting structure layer is illustrated.

The first light emitting structure layer 120 has a first conductivity type on the first conductive semiconductor layer 121, the active layer 122, the second conductive semiconductor layer 123, and the second conductive semiconductor layer 123. The semiconductor device 124 further includes a type semiconductor layer 124. The first conductive type is N type and the second conductive type is P type, and may have a reverse structure thereof. The first light emitting structure layer 120 may include a junction structure of N-P-N or P-N-P.

In addition to the first light emitting structure layer 120, at least one of the second and third light emitting structure layer may include the NPN or PNP junction structure.

4 is a view showing a light extraction structure of the light-transmitting support layer and the light emitting structure layer in an embodiment.

Referring to FIG. 4, the first conductive semiconductor layer 121 of the first light emitting structure layer 120 may include a light extracting structure 121A, and the light extracting structure 121A may be the first conductive type. Concave-convex shape is formed on the upper surface of the semiconductor layer 121, the concave-convex shape may include a structure such as texture pattern, roughness having a regular or irregular size.

The light extracting structure 121A may be formed on the upper surface of the first conductive semiconductor layer 121, that is, the N-face, and thus may change the critical angle of incident light, thereby improving light extraction efficiency.

Since the light extraction structure 121A is formed on the upper surface of the first conductive semiconductor layer 121, the interface between the first conductive semiconductor layer 121 and the first light-transmitting support layer 125 is the light extraction structure 121A. It can be formed into). As another example, another semiconductor layer having a light extraction structure 121A, for example, an undoped semiconductor layer may be further disposed between the first transparent support layer 125 and the first conductive semiconductor layer 121. It is not limited to.

In addition, the light extracting structure may be further included in at least one of the third conductive semiconductor layer of the second light emitting structure layer and the fifth conductive semiconductor layer of the third light emitting structure layer, but is not limited thereto.

In addition, a light extraction structure may be further included on an upper surface of the first light-transmissive support layer 125, for example, an opposite surface of the first light-emitting structure layer. The light extraction structure may change the critical angle of incident light, thereby increasing the light extraction efficiency. The light extraction structure of the first light emitting unit may be selectively applied to each layer of the second and third light emitting units, but is not limited thereto.

5 is a diagram illustrating an example of a plurality of light extraction structures in an embodiment.

Referring to FIG. 5, at least two layers of the second light emitting structure layer 130, the second light transmitting support layer 135, and the second bonding layer 137 may be formed of a light extraction structure in the second light emitting part. . For example, the lower surface of the third conductive semiconductor layer 131 may be formed of the first light extracting structure 131A, and the upper surface of the fourth conductive semiconductor layer 133 may be the second light extracting structure 133A. The upper surface of the first electrode layer 138 may be formed of a third light extracting structure 138A, and the lower surface of the second translucent support layer 135 may be formed of a fourth light extracting structure 135A. Can be formed.

Since the interface between the first electrode layer 138 and the electrode 139 is formed as a rough surface by the third light extracting structure 138A, the loss of light incident to the electrode 139 may be reduced.

In addition, the interface between the second translucent support layer 135 and the second bonding layer 137 is formed in a rough surface by the fourth light extracting structure 135A, so that the light incident on the second bonding layer 137 is formed. The loss can be reduced.

The embodiment has described an example in which a light extraction structure is formed on the second light emitting structure layer 130 and the layers 135 and 138 adjacent to the second light emitting part, but the second light emitting part is formed on at least one of the first light emitting part and the third light emitting part. A light extraction structure that is the same as or similar to the light extraction structure of the light emitting unit may be formed, but is not limited thereto.

6 is a diagram illustrating an example of a bonding layer and a connection electrode in an embodiment. The above description describes the second bonding layer 137 and the second connection electrode 136, and the other bonding layer and the connection electrode are described below with the second bonding layer 137 and the second connection electrode 136. The structure of can be selectively applied.

Referring to FIG. 6A, the second bonding layer 137 has a disc shape, and a second connection electrode 136 is disposed under the second bonding layer 137. The second connection electrode 136 may be disposed under the center of the second bonding layer 137. The width of the second connection electrode 136 may be formed at least narrower than the width of the second bonding layer 137. The second connection electrode 136 may have a circular or polygonal shape, but is not limited thereto.

Referring to FIG. 6B, the second bonding layer 137 includes a center side first portion C1 and a second portion P1 extending outward from at least one side of the first portion C1. It includes. The second portion P1 may extend opposite to each other or at a predetermined angle with respect to the first portion C1, and may be formed to have the same length or different lengths.

A plurality of second connection electrodes 136 is disposed below the second bonding layer 137, and the plurality of second connection electrodes 136 may include a first portion C1 of the second bonding layer 137 and Each of the second parts P1 may be disposed. The plurality of second connection electrodes 136 may be in contact with different regions of the first conductive semiconductor layer to distribute and supply current.

Referring to FIG. 6C, the second bonding layer 137B has a loop-shaped shape around a center-side first portion C2, a line-shaped second portion P2, and the second portion P2. And a third portion P3, wherein the region of the first portion C2 is formed to be wider than other regions, and the second portion P2 branches to at least both sides of the first portion C2. The third portion P3 is connected to at least a portion of the second portion P2 and is formed in a circular shape or a polygonal shape.

A second connection electrode 136 is disposed under the second bonding layer 137B, and the second connection electrode 136 is the first to third portions C2 to 3 of the second bonding layer 137 ( A plurality may be disposed below at least one of P3). The second connection electrode 136 may be further disposed below the third portion P3, but is not limited thereto.

Referring to FIG. 6D, the second bonding layer 137C includes a first portion C3 and a second portion P4, and the first portion C3 is a center side and wider than other regions. The second portion P4 may be formed to have a width, and the second portions P4 may be disposed to be offset from each other by at least 30 ° to 120 ° from the first portion C3. The second portion P4 may have, for example, a finger shape, spaced at intervals of 90 °, and may have the same length or different lengths.

A plurality of second connection electrodes 136 may be disposed below the second bonding layer 137, and the plurality of second connection electrodes 136 may be spaced apart from each other to prevent concentration of current.

In addition to the structures of the second bonding layer 137 and the second connection electrode 136, the structures of the other bonding layer and the other connection electrode may be selectively formed among the above structures. In addition, since the second bonding layer 137 is bonded to a part of the first bonding layer 137, the bonding portion may be formed in the same shape.

7 to 21 are views illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIG. 7, the first light emitting structure layer 120 is formed on the first substrate 101. The first substrate 101 may be loaded onto growth equipment, and a plurality of compound semiconductor layers may be formed on the first substrate 101. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The first substrate 101 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, GaAs, Ga ₂ O ₃ , and the like. An uneven structure may be formed on the first substrate 101, and the uneven structure may be formed in a lens shape or a stripe shape.

On the first substrate 101, a structure (eg, a pattern shape, a pillar shape, etc.) for improving the crystal structure or light extraction efficiency by using a compound semiconductor (eg, ZnO, GaN) of Group 2 to Group 6 elements is provided. Can be formed.

In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the first substrate 101, and the buffer layer may be formed to reduce the difference in lattice constant between the first substrate 101 and the compound semiconductor. . GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like using the buffer layer, for example, a group III-V compound semiconductor. The undoped semiconductor layer is an undoped nitride-based semiconductor, which is intentionally doped without a conductive dopant. The undoped semiconductor layer is a semiconductor layer having a significantly lower electrical conductivity than the first conductive semiconductor layer, and may be, for example, an undoped GaN layer and may have characteristics of the first conductive type. The undoped semiconductor layer may be formed to a thickness of 1 ~ 3㎛. For convenience of explanation, the first light emitting structure layer 120 is grown on the first substrate 101 as an example.

The first light emitting structure layer 120 includes a first conductive semiconductor layer 121, a first active layer 122, and a second conductive semiconductor layer 123, and the first conductive semiconductor layer 121. The silver may be selected from compound semiconductors of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. The first active layer 122 is formed on the first conductive semiconductor layer 121, and may be formed of a compound semiconductor of a group III-V group element. The first active layer 122 may be formed of a single or multiple quantum well structure, and may also be formed of a quantum wire structure or a quantum dot structure. The first active layer 122 is _{In x Al y Ga 1 -x- y} N well layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) and In _x Al _y and Ga ₁ includes a barrier layer having a compositional formula of _{-x- y N (0≤x≤1, 0≤y≤1,} 0≤x + y≤1). The first active layer 122 may be formed of, for example, a cycle of an InGaN well layer / GaN barrier layer, a cycle of an InGaN well layer / AlGaN barrier layer, or a cycle of an InGaN well layer / InGaN barrier layer. It doesn't. A conductive clad layer may be formed on or under the first active layer 122, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

The first light emitting structure layer 120 may be formed of an N-type first conductive type, a P-type semiconductor of the second conductive type, or a reverse structure thereof. In addition, the first light emitting structure layer 120 may further include a first conductive type, for example, an N type semiconductor layer, on the second conductive semiconductor layer 123. Accordingly, the first light emitting structure layer 120 may include at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.

Referring to FIG. 8, a protective layer 117 is formed in a second region except for the first region on the first light emitting structure layer 120, and the second region is a peripheral region or an edge region of the first region. It may be, and may be formed in a polygonal or band structure having a loop shape. The protective layer 117 may be formed of a single layer or multiple layers, but is not limited thereto.

The protective layer 117 may be formed of a transmissive insulating layer or a conductive layer, and may be formed of a sputtering apparatus or a deposition apparatus after forming a mask pattern in the first region.

The transmissive insulating layer may be selectively formed among SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, and the like. The transmissive conductive layer includes an oxide or nitride, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and IGZO. It may include at least one of (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide).

9, a plurality of conductive layers 110 and support members 115 are formed on the second conductive semiconductor layer 123. The plurality of conductive layers 110 may include a first conductive layer 111 on the second conductive semiconductor layer 123, a second conductive layer 112 on the first conductive layer 111, and the second conductive layer. The third conductive layer 113 is disposed on the layer 112, and the fourth conductive layer 114 is disposed on the third conductive layer 113. The plurality of conductive layers 110 may be formed by selectively using a sputtering, plating, and deposition method, but is not limited thereto.

The first conductive layer 111 may be formed on the second conductive semiconductor layer 123 by arranging a second region in a mask pattern. The first conductive layer 111 may include a light-transmitting oxide or / and nitride series, for example, Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Monolayer using at least one of indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , and RuOx Or may be formed in multiple layers. The first conductive layer 111 may be formed of a metal material including In, Zn, Sn, Pt, Ag, Ni, Au, Hf, and a selective combination thereof. As another example, the first conductive layer 111 may be formed in a multilayer structure using the light transmitting oxide and the metal material, for example, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO. It may be formed in a laminated structure such as.

The second conductive layer 112 may be formed on the first conductive layer 111 to have a thickness different from that of the first conductive layer 111. The second conductive layer 112 may also be formed to extend on the protective layer 117, but is not limited thereto. The second conductive layer 112 includes a metal that can efficiently reflect incident light. The second conductive layer 112 includes a reflective material, and preferably may include at least one metal layer. For example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and optional combinations thereof. The second conductive layer 112 may include a metal having a reflectance of 50% or more, and may preferably include a metal having a reflectance of 90% or more.

A third conductive layer 113 is formed on the second conductive layer 112, and the third conductive layer 113 may be formed of one or more of Ni, Pt, Ti, W, V, Fe, and Mo. It can be formed in a single layer or multiple layers. An outer side of the third conductive layer 113 may extend over the protective layer 117.

The fourth conductive layer 114 is formed on the third conductive layer 113 and may be used as a bonding layer or a seed layer. The fourth conductive layer 114 is In, Sn, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd , Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu- Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al -Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu It may be formed of a layer containing any one or two or more of -Cu 2 O, Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P, Pd-Ni.

At least one of the third conductive layer 113 and the fourth conductive layer 114 may not be formed, but is not limited thereto.

The support member 115 is disposed on the fourth conductive layer 114, and the support member 115 may include a conductive material. The support member 115 may be formed of, for example, Cu, Au, Ni, Mo, Ag, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Cu-W, carrier wafers (Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.) may be selectively formed.

The support member 115 may be formed by an electroplating method, or may be bonded in a bonding method or a sheet form, but is not limited thereto. The support member 115 may be used as a path for supplying power and a heat radiation path. The support member 115 supports the entire light emitting device, and may have a thickness of 30 to 500 μm. As another example, the support member 115 may be formed of an insulating support member such as ZnO and Al ₂ O ₃ materials, not the conductive member.

FIG. 10 is a structure in which the structure of FIG. 9 is rotated in a reverse direction.

9 and 10, the first substrate 101 is removed by a physical lift off method. The first substrate 101 is irradiated with a laser of a predetermined wavelength to remove at least the first substrate 101 from the first light emitting structure layer 120. This approach can be defined as laser lift off (LLO). The first substrate 101 can be removed by a chemical lift-off method, which can separate the first substrate 101 by wet etching between the first substrate 101 and the semiconductor layer (eg, the buffer layer). have.

An upper surface of the first conductive semiconductor layer 121 of the first light emitting structure layer 120 is N-face, and processes such as polishing and polishing may be performed. An upper surface of the first conductive semiconductor layer 121 may be formed in a light extraction structure.

Referring to FIG. 11, etching is performed on the outside of the first light emitting structure layer 120. The outer portion of the protective layer 117 is exposed by the etching process of the first light emitting structure layer 120. The etching process may include dry or wet etching, and the etching is performed on the interface between the chip and the chip.

The outer side of the first light emitting structure layer 120 may be treated as a surface perpendicular to the bottom surface of the support member 105 or may be treated as an inclined surface. Each layer of the first light emitting structure layer 120 may be formed to have a width that gradually narrows away from the support member 115. The etching process may be formed before forming the first transparent support layer 125 or after the first transparent support layer 125 is formed.

An upper surface of the first conductive semiconductor layer 121 may be formed in the light extraction structure as shown in FIG. 4 by dry etching or wet etching, but is not limited thereto.

The first translucent support layer 125 may be formed on the first light emitting structure layer 120. The first translucent support layer 125 may be formed on the first conductive semiconductor layer 121 to have a width equal to or narrower than that of the first conductive semiconductor layer 121.

The first transparent support layer 125 may be formed of a sputter or / and deposition equipment, the material is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be an insulating material such as. As another example, the first transparent support layer 125 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).

The first light transmitting support layer 125 may have a thickness of several μm or more, and preferably, 1 μm to 200 μm. The first translucent support layer 125 is provided as a space or a spacer in which the light emitted from the first active layer 122 can be sufficiently diffused.

Referring to FIG. 11, after a hole 126A is formed from a first transparent support layer 125 to a depth at which the first conductive semiconductor layer 121 is exposed, a first connection electrode 126 is formed in the hole 126A. Form). The hole 126A may be formed using a laser or a drill, but is not limited thereto. The hole 126A is formed to be lower than the top surface of the first conductive semiconductor layer 121, thereby increasing the contact area of the first connection electrode 126.

A first connection electrode 126 is formed in the hole 126A, and the first connection electrode 126 is in ohmic contact with the first conductive semiconductor layer 121. The first connection electrode 126 may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. It may include, and may be formed of at least two layers. The first connection electrode 126 may be formed using a sputtering, plating, or deposition equipment, but is not limited thereto.

The first connection electrode 126 includes an ohmic portion M1, a connection portion M2, and a bonding portion M3, and the ohmic portion M1 is made of a material such as Cr, V, W, and TI. In contact with the conductive semiconductor layer 121, the connection part M2 is bonded to the ohmic part M1 and the bonding part using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, and W. The bonding portion M3 is disposed between the connecting portion M2 and the first bonding layer 127 by a metal such as Au.

The first bonding layer 127 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the first bonding layer 127 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

An insulating layer 119 is formed on a side surface of the first light emitting structure layer 120, one side of the insulating layer 119 extends around an upper surface of the first light-transmitting support layer 125, and the other side is the protective layer. 117 may be contacted.

The fourth connection electrode 128 connected to the first bonding layer 127 may be disposed on the protective layer 117 along the outer side of the insulating layer 119 and may be used as a pad.

7 to 11 illustrate a process of forming the first light emitting unit A1, and the first light emitting unit A1 may be one chip structure, but is not limited thereto.

FIG. 12 is an example of the plan view of FIG. 11, wherein the first bonding layer 127 has a wide center side bonding region, and the second portion P1 is branched in at least one line shape in an outward direction, and the fourth The connection electrode 128 extends over the protective layer 117.

13 is a diagram illustrating an example of formation of the second light emitting part A2.

Referring to FIG. 13, a second light emitting structure layer 130 is formed on the second substrate 102. The second substrate 102 may be loaded onto growth equipment, and a plurality of compound semiconductor layers may be formed on the second substrate 102. The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The second substrate 102 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs, Ga ₂ O ₃ . An uneven structure may be formed on the second substrate 102, and the uneven structure may be formed in a lens shape or a stripe shape.

On the second substrate 102, a structure (eg, a pattern shape, a pillar shape, etc.) for improving the crystal structure or light extraction efficiency by using a compound semiconductor (eg, ZnO, GaN) of Group 2 to Group 6 elements is provided. Can be formed.

In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the second substrate 102, and the buffer layer may be formed to reduce the difference in lattice constant between the second substrate 102 and the compound semiconductor. . GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like using the buffer layer, for example, a group III-V compound semiconductor. The undoped semiconductor layer may be formed of a GaN-based semiconductor layer, but is not limited thereto.

A second transmissive support layer may be formed between the second substrate 102 and the second light emitting structure layer 130, and the second transmissive support layer may be formed of a material such as sapphire on which the semiconductor layer may be grown. Can be formed. For convenience of explanation, the second light emitting structure layer 130 is grown on the second substrate 102 as an example.

The second light emitting structure layer 130 includes a third conductive semiconductor layer 131, a second active layer 132, and a fourth conductive semiconductor layer 133, and the third conductive semiconductor layer 131 The silver may be selected from compound semiconductors of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. The second active layer 132 may be formed on the third conductive semiconductor layer 131, and may be formed of a compound semiconductor of a group 3 to 5 group element. The second active layer 132 may be formed of a single or multiple quantum well structure, and may also be formed of a quantum wire structure or a quantum dot structure. The second active layer 132 is _{In x Al y Ga 1 -x- y} N well layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) and In _x Al _y and Ga ₁ includes a barrier layer having a compositional formula of _{-x- y N (0≤x≤1, 0≤y≤1,} 0≤x + y≤1). The second active layer 132 may be formed by, for example, a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. It doesn't. A conductive clad layer may be formed on or under the second active layer 132, and the conductive clad layer may be formed of a GaN-based semiconductor. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

The second light emitting structure layer 130 may be formed of an N type of the third conductive type, a P type semiconductor of the fourth conductive type, or a reverse structure thereof. In addition, the second light emitting structure layer 130 may further include a third conductive type, for example, an N type semiconductor layer, on the fourth conductive semiconductor layer 133. Accordingly, the second light emitting structure layer 130 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The first electrode layer 138 is formed on the second light emitting structure layer 130, and the first electrode layer 138 may be formed by sputtering and / or deposition. The first electrode layer 138 is a current diffusion layer and includes a light transmissive material. The first electrode layer 138 is a transmissive conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO Nitride), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and IAZO. (indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / It may include at least one of Au / ITO. As another example, the first electrode layer 138 may be formed as an ohmic contact layer, and the material may include one or more of In, Zn, Sn, Ni, Pt, and Ag. The first electrode layer 138 may transmit light at a thickness of several kilowatts or more, and may not interfere with light extraction.

The first electrode layer 138 may be formed to 50% or more of the upper surface area of the fourth conductive semiconductor layer 133, but is not limited thereto.

14 to 16 illustrate a process of forming the third light emitting unit.

Referring to FIG. 14, a third light emitting structure layer 140 is formed on the third substrate 102. A plurality of compound semiconductor layers may be formed on the third substrate 103. The third substrate 102 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs, Ga ₂ O ₃ . An uneven structure may be formed on the third substrate 103, and the uneven structure may be formed in a lens shape or a stripe shape.

On the third substrate 103, a structure (eg, a pattern shape, a pillar shape, etc.) for improving the crystal structure or light extraction efficiency by using a compound semiconductor (eg, ZnO, GaN) of Group 2 to Group 6 elements is provided. Can be formed.

In addition, a buffer layer and / or an undoped semiconductor layer may be formed on the third substrate 103, but is not limited thereto.

A third transmissive support layer may be formed between the third substrate 103 and the third light emitting structure layer 140, and the third transmissive support layer may be formed of a material such as sapphire, from which the semiconductor layer may be grown. Can be formed. For convenience of explanation, the third light emitting structure layer 140 is grown on the third substrate 103 as an example.

The third light emitting structure layer 140 includes a fifth conductive semiconductor layer 141, a third active layer 142, and a sixth conductive semiconductor layer 143, and the fifth conductive semiconductor layer 141. The silver may be selected from compound semiconductors of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, or the like. The third active layer 142 is formed on the third conductive semiconductor layer 141, and may be formed of a compound semiconductor of a group III-V group element.

The third active layer 142 may be formed of a single or multiple quantum well structure, and may also be formed of a quantum wire structure or a quantum dot structure. The second active layer 132 is _{In x Al y Ga 1 -x- y} N well layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ) and In _x Al and _y Ga _{1 -x- y} N (including 0≤x≤1, 0≤y≤1, 0≤x + y≤10≤x≤1, 0≤y≤1, 0≤x + y≤1 layer A conductive cladding layer may be formed on or under the fourth active layer 142, and the conductive cladding layer may be formed of a GaN-based semiconductor. It is higher than the band gap of the, and the band gap of the conductive clad layer may be higher than the band gap of the barrier layer.

In the third light emitting structure layer 140, the fifth conductive semiconductor layer 141 may be an N-type semiconductor layer, and the sixth conductive semiconductor layer 143 may be a P-type semiconductor layer, or an inverted structure thereof. have. In addition, the third light emitting structure layer 140 may further include a third conductive type, for example, an N type semiconductor layer, on the sixth conductive type semiconductor layer 143. Accordingly, the third light emitting structure layer 140 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The second electrode layer 148 may be formed on the third light emitting structure layer 140, and the second electrode layer 148 may be formed by sputtering and / or deposition. The second electrode layer 148 is a current diffusion layer and includes a light transmissive material. The second electrode layer 148 is a translucent conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO (IZO Nitride), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and IAZO. (indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), IrO _x , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / It may include at least one of Au / ITO. As another example, the second electrode layer 148 may be formed as an ohmic contact layer, and the material may include one or more of In, Zn, Sn, Ni, Pt, and Ag. The second electrode layer 148 may transmit light at a thickness of several orders of magnitude or more, and may not interfere with light extraction.

The second electrode layer 148 may be formed to 50% or more of the upper surface area of the sixth conductive semiconductor layer 143, but is not limited thereto.

The temporary substrate 150 may be formed on the second electrode layer 148, and the temporary substrate 150 may be formed in one or more layers. The temporary substrate 150 may be formed in the same manner as the sputtering or deposition method, or may be attached as a separate sheet, but is not limited thereto.

The temporary substrate 150 includes a first protective layer 151, a second protective layer 152, a sacrificial layer 153, a diffusion layer 154, and a support layer 155. The first protective layer 151 is formed of an insulating material or a metal material, and is an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , or Ti, Cr, or the like. It can be formed using. The first protective layer 151 protects the third light emitting structure layer 140 from external impact.

A second passivation layer 152 is formed on the first passivation layer 151, and the second passivation layer 152 is disposed between the first passivation layer 151 and the sacrificial layer 153. It can protect the shock and damage that can be caused by. The second protective layer 152 includes at least one of In, Sn, Ag, Nb, Ni, Au, and Cu material. The second protective layer 152 may include at least one metal layer, and may be formed using a sputtering, deposition, plating apparatus, or the like.

A sacrificial layer 153 is formed on the second protective layer 152, and the sacrificial layer 153 may include a material having at least a higher band gap energy than the band gap energy of the diffusion layer 154. The sacrificial layer 153 includes an insulating material, and the insulating material is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ At least one of, the band gap energy of the SiO ₂ is about 8.9eV, the band gap energy of Al ₂ O ₃ is about 8eV.

The diffusion layer 154 may be formed of a material lower than the band gap energy and the laser energy of the sacrificial layer 153. The diffusion layer 154 includes, for example, a material such as ITO, ZnO, IZO, or TiN, and has a band gap energy of about 2.0 to 7.0 Ev.

A support layer 155 is formed on the sacrificial layer 154, and the support layer 155 includes at least one of an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ . can do. The support layer 155 may be formed of a material larger than the band gap energy of the laser and the band gap energy of the diffusion layer 154.

The support layer 155 is formed to have a thickness of at least 30 μm or more, and serves to support the removal of the second substrate 102.

Each of the sacrificial layer 153, the diffusion layer 154, and the support layer 155 may be formed as a single layer or a multilayer, but is not limited thereto.

14 and 15, the temporary substrate 150 is disposed on a base, and the third substrate 103 is removed by a physical lift off or chemical lift off method. The physical lift-off method may be separated from the semiconductor layer by irradiating a laser on the third substrate 103. In the chemical lift-off method, the third substrate 103 may be separated by etching between the semiconductor layer and the substrate or between the semiconductor layers using a wet etching solution.

When the third substrate 103 is removed, at least one of the buffer layer, the undoped semiconductor layer, and the fifth conductive semiconductor layer 141 may be exposed. The buffer layer and the undoped semiconductor layer may be removed, and the removal method may use wet etching.

An upper surface of the fifth conductive semiconductor layer 141 is N-face, and may be formed in a light extraction structure by wet etching.

Referring to FIG. 16, a third transparent support layer 145 is formed on the fifth conductive semiconductor layer 141, and the third transparent support layer 145 is formed to have a predetermined thickness to emit light. The thickness may be formed about 1 ~ 200㎛. The third transparent support layer 145 may not be formed, but is not limited thereto.

The third transparent support layer 145 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the third translucent support layer 145 is Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO). The third translucent support layer 145 may be formed of a group III-V compound semiconductor, and may be used as, for example, a support layer without removing the undoped semiconductor layer.

A hole 146A is formed in the third transparent support layer 145, and the hole 146A extends further below the top surface of the fifth conductive semiconductor layer 141. A second connection electrode 136 is formed in the hole 146A, and the second connection electrode 136 may include an ohmic metal and a bonding metal. The second connection electrode may include at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. It may be formed of at least two metal layers. The second connection electrode 136 includes an ohmic part M1, a connection part M2, and a bonding part M3, and the ohmic part M1 is made of a material such as Cr, V, W, and TI. In contact with the conductive semiconductor layer 141, the connection part M2 is bonded to the ohmic part M1 and the bonding part using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, and W. The bonding portion M3 is formed of a metal such as Au and is disposed between the connecting portion M2 and the fourth bonding layer 147.

The second connection electrode 136 may be formed in one or a plurality, and this number can smoothly supply current.

A fourth bonding layer 147 is formed on the second connection electrode 136, and the fourth bonding layer 147 is in contact with the third connection electrode 146, and has circular, polygonal, random shapes, lines, and the like. It may be selectively formed from a curved shape, it may be formed in a shape corresponding to the third bonding layer.

The fourth bonding layer 147 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the fourth bonding layer 147 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb and Pb-free solder, but is not limited thereto.

The fourth bonding layer 147 may be disposed on a side opposite to the second electrode layer 148 based on the third light emitting structure layer 140 and may have a size that does not prevent light extraction. The fourth bonding layer 147 may be formed with an area of at least 50% or less, preferably 10% or less, of the lower surface area of the third light emitting structure layer 140.

The structure of FIG. 16 is an example of the third light emitting unit A3 and may be described as at least one chip structure.

Referring to FIG. 17, the second light emitting unit A2 of FIG. 13 and the third light emitting unit A3 of FIG. 16 are disposed to face each other. The fourth bonding layer 147 of the third light emitting unit A3 is aligned to correspond to the third bonding layer 139 of the second light emitting unit A2, and the third bonding layer 139 and the fourth bonding are aligned. The layers 147 are bonded to each other. A separate bonding material may be further included between the third bonding layer 139 and the fourth bonding layer 147, but is not limited thereto.

The first electrode 138 and the third transparent support layer 145 may be spaced apart from each other, and may be formed as empty regions therebetween.

The region 140 between the first translucent support layer 125 and the second translucent support layer 135 may be filled with an insulating material or another translucent material, but is not limited thereto.

The second light emitting unit A2 is coupled to the first light emitting unit A1 in a vertical direction.

Referring to FIGS. 17 and 18, in the structure in which the structure of FIG. 17 is reversed, the temporary substrate 150 is disposed on the base and the second substrate 102 is removed.

The second substrate 102 is removed by a physical lift off or chemical lift off method. The physical lift-off method may be separated from the semiconductor layer by irradiating a laser to the second substrate 102. In the chemical lift-off method, the second substrate 102 may be separated by etching between the semiconductor layer and the substrate or between the semiconductor layers using a wet etching solution.

When the second substrate 103 is removed, at least one of the buffer layer, the undoped semiconductor layer, and the third conductive semiconductor layer 131 may be exposed. The buffer layer and the undoped semiconductor layer may be removed, and the removal method may use wet etching.

An upper surface of the third conductive semiconductor layer 131 may be N-face, and may be formed in a light extraction structure by wet etching.

Referring to FIG. 19, a second transparent support layer 135 is formed on the third conductive semiconductor layer 131, and the second transparent support layer 135 is formed to have a predetermined thickness to emit light. The thickness may be formed about 1 ~ 200㎛. The second translucent support layer 135 may not be formed, but is not limited thereto.

The second translucent support layer 135 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as. As another example, the second translucent support layer 135 Indium Tin Oxide (ITO), Indium zinc oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IZAZO), Indium gallium zinc oxide (IGZO) It may be formed of a conductive material, such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO). The second translucent support layer 135 may be formed of a Group III-V compound semiconductor, and may be used as a support layer without removing the undoped semiconductor layer.

A hole 136A is formed in the second transparent support layer 135, and the hole 136A extends further below the top surface of the third conductive semiconductor layer 131. A second connection electrode 136 is formed in the hole 136A, and the second connection electrode 136 may include an ohmic metal and a bonding metal. The second connection electrode 136 includes at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, Cr, V, W, Ti, Pt, Ru, Rh, Cu. It may include, and may be formed of at least two metal layers. The second connection electrode 136 includes an ohmic part M1, a connection part M2, and a bonding part M3, and the ohmic part M1 is made of a material such as Cr, V, W, and TI. In contact with the conductive semiconductor layer 131, the connection part M2 is bonded to the ohmic part M1 and the bonding part using a metal such as Pt, Pd, Ru, Rh, V, Ti, Al, Cu, and W ( The bonding portion M3 is formed of a metal such as Au and is disposed between the connecting portion M2 and the second bonding layer 137.

The second connection electrode 136 may be formed in one or a plurality, and this number can smoothly supply current.

A second bonding layer 137 is formed on the second connection electrode 136, and the second bonding layer 137 is in contact with the second connection electrode 136, and has circular, polygonal, random shapes, lines, and the like. It may be selectively formed out of a curved shape, it may be formed in a shape corresponding to a portion of the first bonding layer.

The second bonding layer 137 may include one or more of Sn, Nb, Cu, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. In addition, the second bonding layer 137 may be a eutectic metal, for example, an alloy such as Au / Sn, SnPb, and Pb-free solder, but is not limited thereto.

The second bonding layer 137 may be formed on the surface of the second light emitting structure layer 130 with an area of at least 70% or less, preferably 30% or less.

20 and 21, the temporary substrate 150 is removed. At least the support layer 155 of the layers 151-155 of the temporary substrate 150 is removed by a physical lift off method and / or a chemical lift off method.

In the physical lift-off method, the laser is irradiated through the support layer 155, and the diffusion layer 154 between the support layer 155 and the sacrificial layer 153 is made of a material smaller than the laser energy and the support layer 155. And the band gap energy of the sacrificial layer 153 are absorbed as heat energy by the laser and decomposed by the heat energy, thereby separating the support layer 155. At least a portion of the diffusion layer 154 may be separated when the support layer 155 is separated.

As another example, a laser having a predetermined wavelength is focused on a region of the sacrificial layer 153 between the second protective layer 152 and the diffusion layer 154, and thus the sacrificial layer 153 is separated from the second protective layer 152. ) Can be separated. Accordingly, the support layer 155 may be separated together with other layers.

The first protective layer 151 and the second protective layer 152 may prevent the second light emitting structure layer 130 from being damaged by the laser lift-off process.

When the support layer 155 and a part of the diffusion layer 154 are separated, the layers 151, 152, and 153 on the second electrode layer 148 are selectively removed through the etching process as shown in FIG. 21. For example, the sacrificial layer 153, the second protective layer 152, and the first protective layer 151 may be removed by wet etching, or may be removed by dry etching if necessary.

22 and 23, when the temporary substrate is removed, the electrode 149 is formed on the second electrode layer 148. The electrode 149 is formed to have a width smaller than the width of the second electrode layer 148 and includes a pad or a pad and an electrode pattern connected thereto. The electrode pattern may include a pattern having a shape branching outwardly and / or inwardly from at least one direction from the pad, and may diffuse current. The electrode 149 may be formed using a deposition, sputtering or plating method.

The first polarity power may be supplied through the support member 115 or the conductive layer 110, and the second polarity power may be supplied through the electrode 149. The third polarity power may be supplied through the other side 127 of the first bonding layer 127. The first polarity and the second polarity are the same polarity, and the third polarity has the opposite polarity to the first and second polarities.

The first polarity power flows to the first light emitting structure layer 120, the first connection electrode 126, and the first bonding layer 127 through the plurality of conductive layers 110. It will emit light. The second polarity power source is the third light emitting structure layer 140, the third connection electrode 146, the third and fourth bonding layers 147 and 139, the second light emitting structure layer 130, and the second connection electrode 136. ), The second and third light emitting parts A2 and A3 flow to the fourth connection electrode 128 connected to the first bonding layer 127 through the second bonding layer 137. Accordingly, the first to third light emitting structure layers 120, 130, and 140 of the light emitting units A1, A2, and A3 emit the first to third lights, respectively. Each of the first to third lights may be light having a peak wavelength in a visible light band or a peak wavelength in an ultraviolet light band.

At least one of the first to third lights may be light of a peak wavelength of the same band as other lights or light of a peak wavelength of different bands. When the first light to the third light is the peak wavelength of the same band, the light intensity can be increased. When at least one of the first to third lights is light having a peak wavelength in a different band, the mixed light may be white light or another fourth light.

At least one of the first to third lights may include at least one of blue, green, and red wavelengths, but is not limited thereto. The band may include the spectrum of each color spectrum, such as the blue wavelength, the red wavelength, and the green wavelength, rather than a single peak wavelength.

24 is a circuit diagram of FIG. 1.

Referring to FIG. 24, the first light emitting unit A1 is connected in parallel with the second and third light emitting units A2 and A3, and the second and third light emitting units A2 and A3 are connected in series. . An anode of the first light emitting part A1 and the third light emitting part A3 is connected to each of the power terminals T1 and T2 of positive polarity, and the second light emitting part A2 and the first light emitting part A1 are respectively connected to each other. The cathode is commonly connected to the power supply terminal T3 of negative polarity. Each of the light emitting units A1, A2, and A3 functions as a light emitting diode.

As such, by arranging the first light emitting portion A1 and the second and third light emitting portions A2 and A3 in parallel, the LEDs having different driving conditions, for example, the LEDs having different driving voltage characteristics are separately driven. Different light emitting diodes can be driven almost simultaneously. The embodiment has the effect of using the same kind of light emitting diodes or different kinds of light emitting diodes.

25 is a modified example of FIG. 1.

Referring to FIG. 15, a current blocking layer 118 is disposed below the first light emitting structure layer 120 in a region corresponding to the first connection electrode 126. The current blocking layer 118 may also be applied to the structure of FIG. 1.

The current blocking layer 118 is disposed below the second conductive semiconductor layer 123 and disposed to correspond to the first connection electrode 126 in a vertical direction. The current blocking layer 118 may be selected from a material having a lower conductivity or a schottky contact material than the first conductive layer 111, and preferably, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may be selected from an insulating material such as.

Accordingly, the current supplied to the support member 115 does not flow in the shortest path with the first connection electrode 126 by the current blocking layer 118, but may flow in a bypass manner, thereby providing a current spreading effect. .

The fourth connection electrode 128 connected to the first bonding layer 127 may be disposed on the protective layer 117 along the first side surface of the insulating layer 119A and may be used as a pad.

An electrode 149 is disposed on the second electrode layer 148, the electrode 149 is in contact with the second electrode layer 148, and the fourth connection electrode 149A connected to the electrode 149 is insulated from the insulating layer. It may be disposed on an outer side of the conductive layer 110 along the second side of the layer 119A. The fourth connection electrode 149A may be used as a pad, but is not limited thereto. The first side and the second side may be different sides, preferably opposite sides, but are not limited thereto.

The fourth connection electrode 149A may connect at least one of the second conductive layers 112 to the fourth conductive layer 114 and the second electrode layer 148 to each other. For example, a fourth connection electrode 149A connected to the electrode 149 is connected to the second conductive layer 112, and the second conductive layer 112 extends below the protective layer 117. One side 112A of the second conductive layer 112 may further extend to the outer side surface of the protective layer 117. Accordingly, the second conductive layer 112 may be disposed outside the protective layer 117 and may be in physical contact with the fourth connection electrode 149A. As another example, the third conductive layer 113 or the fourth conductive layer 114 may be connected to the fourth connection electrode 149A.

The second conductive layer 112 and the third conductive layer 113 may be formed to be bent, but is not limited thereto.

The first portion S1 of the insulating layer 119A partially extends in an area 161 between the first light emitting portion A1 and the second light emitting portion A2, and the second portion S2 is It may partially extend in an area 162 between the second light emitting part A2 and the third light emitting part A3.

The insulating layer 119A may protect the outside of the first to third light emitting structure layers 120, 130, and 140, and may prevent an interlayer short and moisture penetration.

The insulating layer 119A may further extend around the top surface of the sixth conductive semiconductor layer 143. The refractive index of the insulating layer 119A is lower than that of the compound semiconductor layer, thereby improving light extraction efficiency. The insulating layer 119A may be selected from insulating materials such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

FIG. 26 is a circuit diagram of FIG. 25.

Referring to FIG. 26, the second and second light emitting units A2 and A3 are connected in series, and are connected to the first light emitting unit A1 in parallel. The cathodes of the second and first light emitting units A2 and A1 are connected in common to the power supply terminal T3 of negative polarity, and the anodes of the first and third light emitting units A1 and A3 are positive power supply terminals. Connect to (T1) in common. This connection method may drive the first to third light emitting parts A1, A2, and A3 by the same driving voltage.

27 is a cross-sectional view of a light emitting device package according to the embodiment.

Referring to FIG. 27, the light emitting device package 30 may include a body 20, a first lead electrode 32, a second lead electrode 33, and a third lead electrode 34 installed on the body 10. , A light emitting device 100 according to an embodiment installed on the body 20 and electrically connected to the first to third lead electrodes 32, 33, and 34, and a molding member covering the light emitting device 100. And 40.

The body 20 may include a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (for example, MCPCB), and the inclined surface around the light emitting device 100. This can be formed. The body 20 may include a through hole structure, but is not limited thereto.

A cavity 22 having a predetermined depth may be formed on the body 20, and lead electrodes 32, 33, 34, and the light emitting device 100 are disposed in the cavity 22. The light emitting device 100 may use a light emitting device according to another embodiment, but is not limited thereto.

The upper surface of the body 20 may be formed flat, in which case the cavity 22 is not formed.

The first lead electrode 32, the second lead electrode 33, and the third lead electrode 34 are electrically separated from each other, and provide power to the light emitting device 100. The first lead electrode 32 may be connected to the T1 terminal in FIG. 24, the second lead electrode 33 may be connected to the T2 terminal in FIG. 24, and the third lead electrode 34 may be connected to the T3 terminal in FIG. 24. Can be. The light emitting device 100 is die bonded to the third lead electrode 34 and electrically connected thereto.

The light emitting device 100 may be connected to the first and second lead electrodes 32 and 33 by wires 27, but is not limited thereto.

In addition, the first to third lead electrodes 32, 33, and 34 may reflect light generated by the light emitting device 100 to increase light efficiency, and may be generated by the light emitting device 100. It may also serve to release heat to the outside.

The molding member 40 may include a resin material such as silicon or epoxy, and may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100. A lens may be disposed on the molding member 40, and the lens may be implemented to be in contact with or not in contact with the molding member.

The light emitting device 100 emits a blue color, and at least one kind of phosphor may be disposed on the molding member 40, and in this case, luminous intensity may be 1.5 times or more than that of other chips having the same size. . In addition, when a plurality of colors are emitted from the light emitting device 100, target light (for example, white) may be realized through a plurality of colors on the package, and a separate phosphor is not added to the mold member 40, It can reduce the type of phosphor.

The light emitting device package 30 may be mounted with at least one of the light emitting devices of the embodiments disclosed above, but is not limited thereto.

Although the package of the embodiment is illustrated and described in the form of a top view, it is implemented in a side view to improve the heat dissipation, conductivity, and reflection characteristics as described above. After packaging, the lens may be formed or adhered to the resin layer, but is not limited thereto.

In addition, although the light emitting device 100 is described as being packaged as shown in FIG. 27, the light emitting device 100 may be directly mounted on a board (COB) to cover the light emitting device with a molding member or a lens. A plurality of light emitting devices may be arranged on the board.

<Light unit>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 28 and 29 and a lighting device shown in FIG. 30. And the like.

28 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 28, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device package 30 may be arranged on the substrate 1033 at predetermined intervals. have.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 30 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

29 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 29, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 30 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

30 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 30, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 30 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Each embodiment is not limited to each embodiment, but may be selectively applied to other embodiments disclosed above, but is not limited to each embodiment.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100,100A: light emitting element, 115: support member, 110: conductive layer, 120, 130, 140: light emitting structure layer, 125, 135, 145: transmissive support layer, 126, 136, 146: connecting electrode, 127, 137, 139, 147: bonding layer, 138, 148: electrode layer, 149: electrode, 117: protective layer, 119: insulation layer

Claims (23)

Support member;
A conductive layer on the support member;
A plurality of light emitting structure layers including first to third light emitting structure layers disposed on the conductive layer in at least a vertical direction;
A first bonding layer disposed in a partial region between the first light emitting structure layer and the second light emitting structure layer and electrically connected to a semiconductor layer of the same polarity of the first and second light emitting structure layers;
A second bonding layer disposed in a partial region between the second light emitting structure layer and the third light emitting structure layer and electrically connected to semiconductor layers having different polarities of the first and third light emitting structure layers;
An external electrode disposed on the conductive layer from the first bonding layer to be electrically opened with the conductive layer;
A translucent support layer disposed on any one of above and below at least one of the first to third light emitting structure layers; And
Light emitting device comprising an electrode on the plurality of light emitting structure layer. The light emitting device of claim 1, wherein the support member is any one of a conductive support member and an insulating support member. The method of claim 1, wherein the conductive layer comprises: an ohmic layer under the first light emitting structure layer; And a reflective layer under the ohmic layer. A protective layer as claimed in claim 1 or 3, comprising a protective layer around an outer circumference between the first light emitting structure layer and the conductive layer,
The outer side of the protective layer extends outward from the side of the first light emitting structure layer,
The external electrode is disposed on the outer portion of the protective layer. The semiconductor light emitting device of claim 1, wherein the first light emitting structure layer comprises: a first conductive semiconductor layer under the first bonding layer; A first active layer under the first conductive semiconductor layer; And a second conductive semiconductor layer between the first active layer and the conductive layer.
The second light emitting structure layer may include a third conductive semiconductor layer on the first bonding layer; And a second active layer on the third conductive semiconductor layer. And a fourth conductive semiconductor layer on the second active layer. The light emitting device of claim 5, wherein the first and third light emitting structure layers are semiconductor layers having the same polarity and are electrically connected to the first bonding layer. The semiconductor device of claim 5, wherein the third light emitting structure layer comprises: a fifth conductive semiconductor layer on the second bonding layer; A third active layer on the fifth conductive semiconductor layer; A sixth conductive semiconductor layer on the third active layer,
The fifth conductive semiconductor layer and the sixth conductive semiconductor layer have opposite polarities and are electrically connected to the second bonding layer. 8. The light emitting device of claim 7, wherein the first, third, and fifth conductive semiconductor layers are N-type semiconductor layers, and the second, fourth, and sixth conductive semiconductor layers are p-type semiconductor layers. The light emitting device of claim 7, wherein at least one of the first to third active layers emits at least one of light in a visible light band and light in an ultraviolet light band. The light emitting device of claim 7, wherein the first active layer emits light having a peak wavelength different from that of the second and third active layers. 10. The method of claim 7, wherein the translucent support layer comprises: a first translucent support layer between the first bonding layer and the first light emitting structure layer; And a second translucent support layer between the first bonding layer and the second light emitting structure layer. The light emitting device of claim 11, wherein the light transmissive support layer further comprises a third light transmissive support layer between the third light emitting structure layer and the second bonding layer. The light emitting device of claim 1, wherein the bonding layer is formed in multiple layers. The light emitting device of claim 12, further comprising a plurality of connection electrodes respectively disposed in the first to third translucent support layers. 15. The method of claim 14,
The plurality of connection electrodes may include: a first connection electrode disposed in the first translucent support layer and connected between a first bonding layer and the first light emitting structure layer; A second connection electrode disposed in the second translucent support layer and connected between the first bonding layer and the second light emitting structure layer; And a third connection electrode disposed in the third transparent support layer and connected between the second bonding layer and the third light emitting structure layer. The display device of claim 1, further comprising: a first electrode layer between the second light emitting structure layer and the second bonding layer; And a second electrode layer between the third light emitting structure layer and the electrode. 12. The method of claim 11, wherein the translucent support layer comprises a first and a second transmissive support layer,
The light emitting device of claim 1, wherein the first and second translucent support layers are spaced apart by the first bonding layer. The light emitting device of claim 1, further comprising an insulating layer around at least one of the first to second light emitting structure layers. The light emitting device of claim 1, further comprising a fourth connection electrode extending out of the insulating layer to be connected to the conductive layer from the electrode. The light emitting device of claim 1, wherein the translucent support layer comprises at least one of an insulating material and a conductive material. The light emitting device of claim 15, further comprising a current blocking layer disposed under the second conductive semiconductor layer and corresponding to a direction perpendicular to the first connection electrode. The light emitting device of claim 1, further comprising a light extracting structure in at least one of the first, second, and third light emitting structure layers. The light emitting device of claim 1, wherein the second and third light emitting structure layers are connected in series with each other and are connected in parallel with the first light emitting structure layer.

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