KR20130018071A - Light emitting device package and light emitting apparatus having the same - Google Patents

Abstract

PURPOSE: A light emitting device package and a light emitting apparatus including the same are provided to improve the brightness of a display panel by reflecting light inputted to the lower side of a light guide plate through a reflection member under the light guide plate. CONSTITUTION: A body includes a cavity(15). A first lead frame(31) and a second lead frame(41) are arranged in the cavity of the body. A light emitting chip is arranged on one of the first and second lead frames. A first lead unit(33) is bent from the first lead frame to a first side of the body and is arranged on the first side of the body. A second lead unit(43) is bent from the second lead frame to a second side of the body and is arranged on the second side of the body.

Description

LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING APPARATUS HAVING THE SAME

The embodiment relates to a light emitting device package and a light emitting device having the same.

A light emitting device, such as a light emitting device, is a kind of semiconductor device that converts electrical energy into light, and has been spotlighted as a next-generation light source by replacing a conventional fluorescent lamp and an incandescent lamp.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device package in which leads are disposed on opposite first and second side parts of the body.

The embodiment provides a light emitting device having a light emitting device package mounted between a first substrate and a second substrate.

The light emitting device package according to the embodiment, the body having a cavity; A first lead frame and a second lead frame disposed in the cavity of the body; A light emitting chip disposed on any one of the first and second lead frames; A first lead portion bent from the first lead frame onto a first side portion of the body and disposed on the first side portion of the body; And a second lead portion bent from the second lead frame onto an opposite second side portion of the first side portion of the body and disposed on the second side portion of the body.

A light emitting device according to an embodiment includes a plurality of light emitting device packages having a light emitting area disposed on a front surface thereof, and a first lead portion disposed on an upper surface thereof and a second lead portion disposed on a lower surface thereof; A first substrate disposed under the plurality of light emitting device packages; And a second substrate disposed on the plurality of light emitting device packages.

The embodiment can improve the heat radiation efficiency of the light emitting device package.

The embodiment can improve heat dissipation efficiency in the side view type light emitting device package.

The embodiment can improve the reliability of the light emitting device package and the light emitting device having the same.

1 is a view showing a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of the light emitting device package of FIG. 1.
3 is a cross-sectional view taken along the BB side of the light emitting device package of FIG. 1.
4 is a cross-sectional view of the CC side of the light emitting device package of FIG. 1.
FIG. 5 is a view seen from the first side of the light emitting device package of FIG. 1.
6 is a view seen from the second side of the light emitting device package of FIG.
FIG. 7 is a view of the third side of the light emitting device package of FIG. 1.
FIG. 8 is a view seen from the fourth side portion of the light emitting device package of FIG. 1.
9 is a diagram illustrating another example of the light emitting device package of FIG. 1.
FIG. 10 is a front view of a light emitting module having the light emitting device package of FIG. 1.
FIG. 11 is a front view of a light emitting module in which the light emitting device package of FIG. 1 is arrayed.
12 is a view illustrating a light emitting chip of the light emitting device package of FIG. 1.
FIG. 13 is a view illustrating a light emitting chip of the light emitting device package of FIG. 9.
14 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not entirely reflect the actual size. Like reference numerals denote like elements throughout the description of the drawings.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing a light emitting device package according to an embodiment, FIG. 2 is a sectional view taken along the AA side of the light emitting device package of FIG. 1, FIG. 3 is a sectional view taken along the BB side of the light emitting device package of FIG. CC side view of the light emitting device package of Figure 5 is a view from the first side of the light emitting device package of Figure 1, Figure 6 is a view from the second side of the light emitting device package of Figure 1, Figure 7 FIG. 8 is a view seen from the third side portion of the light emitting device package of FIG. 1 and FIG. 8 is a view seen from the fourth side portion of the light emitting device package of FIG.

1 to 8, the light emitting device package 100 may be implemented as a side light emitting package and may be variously applied as a light source such as a light source and an illumination field of a liquid crystal display such as a mobile phone and a portable computer. have.

The light emitting device package 100 includes a body 11 having a cavity 15, first and second lead frames 31 and 41 in the cavity 15, and a light emitting chip on the first lead frame 31. 101, bent from the first lead frame 31 and bent from the first lead portion 33 and the second lead frame 41 disposed on the first side portion S1 of the body 11. The second lead portion 43 is disposed on the second side portion S2 of the body 11.

The body 11 includes a printed circuit board (PCB), silicon, silicon carbide (SiC), aluminum nitride (AlN), poly phthalamide (PPA), and polymer liquid crystal (Liquid). Crystal Polymer) may be formed in at least one, and the like, but is not limited thereto.

In addition, the body 11 may be formed by injection molding a material such as polyphthalamide (PPA) into an injection structure, using an etching method, or may be manufactured as a printed circuit board, but is not limited thereto.

As shown in FIGS. 2 to 4, the body 11 includes a reflector 12 and a support 13, and the reflector 12 includes a cavity 15 having an open top. The support part 13 is formed integrally with the reflecting part 12 under the reflecting part 12. The first lead frame 31 and the second lead frame 41 disposed on the bottom of the cavity 15 are disposed between the reflector 12 and the support 13.

An open cavity 15 is formed in the front portion S0 of the body 11, and the cavity 15 may be formed to have a predetermined depth and a predetermined shape. The area of the cavity 15 may be a light exit surface area. 2 and 4, the circumference of the cavity 15 may be inclined or perpendicular to the bottom of the cavity 15, but is not limited thereto.

The first side surface portion S1 of the body 11 is an area to be mounted on the substrate, and the second side surface portion S2 is an area opposite to the first side surface portion S1. The third side portion S3 and the fourth side portion S4 are disposed opposite to each other. The cavity 15 has a length longer than the length of the region disposed between the third side portion S3 and the fourth side portion S4, the length of the region disposed between the second side portion S2 and the second side portion S1. It may be formed, but not limited thereto.

The first and second lead frames 31 and 41 are spaced apart from each other at the bottom of the cavity 15. The first and second lead frames 31 and 41 may be made of metal, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). ), Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P) may include at least one, and may be formed of a single metal layer or a multilayer metal layer. The first and second lead frames 31 and 41 may have the same thickness, but the thickness of the first and second lead frames 31 and 41 is not limited thereto.

The first lead frame 31 includes a first lead part 33 as shown in FIGS. 3 and 5, and the first lead part 33 is the body 11 from the first lead frame 31. It is bent through the first side portion (S1) of the body 11 through, and is disposed parallel to the first side portion (S1) of the body (11). The first lead part 33 may have a length corresponding to the length L1 of the support part 13 of the body 11, and may be formed to have a width T2 covering the entire support part 13. It does not limit to this. In addition, a first hole 35 is formed in the first lead frame 31, and a part 16 of the body 11 is disposed in the first hole 35. Accordingly, the coupling force between the first lead frame 31 and the portion 16 of the body 11 may be increased.

The second lead frame 41 includes a second lead part 43 as shown in FIGS. 4 and 6, and the second lead part 43 is the body 11 from the second lead frame 41. It is bent through the first side portion (S1) of the body 11 through, and disposed in parallel with the first side portion (S1) of the body (11). The second lead part 43 may have a length corresponding to the length L1 of the support part 13 of the body 11, and may have a width T3 that covers the entire support part 13. It does not limit to this. In addition, a second hole 45 is formed in the second lead frame 41, and a part 17 of the body 11 is disposed in the second hole 45. Accordingly, the coupling force between the second lead frame 41 and the portion 17 of the body 11 may be increased.

As shown in FIGS. 7 and 8, the first lead part 33 and the second lead part 43 face each other below the bottom of the cavity 15 with respect to the cavity 15, and the body (11) are disposed on opposite sides of each other. The first lead part 33 and the second lead part 43 are used as terminals for supplying power. 2, 5 and 6, the length of the first lead portion 33 and the second lead portion 43 has a length less than the length (L1) of the body 11 and the cavity 15 It may be formed longer than the length (L2) of.

In the light emitting device package 100, the first lead part 33 and the second lead part 43 are disposed on the opposite side of the light exit surface to have a size corresponding to the length of the body 11 to maximize power. In addition, while improving the heat dissipation efficiency can be improved.

The light emitting chip 101 may be disposed on the first lead frame 31 and may be connected to the first lead frame 31 and the second lead frame 41 by a wire 105. The light emitting chip 101 may be bonded to the first lead frame 31 and the second lead frame 41 by a flip chip method or may be die bonded to the first lead frame 31.

The light emitting chip 101 may selectively emit light in a range of visible light to ultraviolet light, and may be selected from, for example, a red LED chip, a blue LED chip, a green LED chip, and a yellow green LED chip. In addition, one or a plurality of light emitting chips 101 may be disposed in the cavity 15, and the light emitting chips 101 are connected to each other by wires 105, but the lead frames 31 and 41 may be connected to each other. It can be directly connected to either. The light emitting chip 101 includes a compound semiconductor light emitting device of Group II to Group VI elements, for example, a compound semiconductor of Group III to Group V elements.

2 to 4, a molding member 61 is disposed in the cavity 15 of the body 11, and the molding member 61 includes a light transmissive resin layer such as silicon or epoxy, and may be a single layer or a multilayer. It can be formed as. The molding member 61 or the light emitting chip 101 may include a phosphor for changing the wavelength of the light emitted, and the phosphor excites a part of the light emitted from the light emitting chip 101 to Will emit light. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 61 may be formed in a flat shape, concave shape, convex shape and the like, but is not limited thereto.

A lens may be further formed on an upper portion of the body 11, and the lens may include a concave or / and convex lens structure, and may provide a light distribution of light emitted from the light emitting device package 100. I can regulate it.

A semiconductor device such as a light receiving device or a protection device may be mounted on the body 11 or any one lead frame, and the protection device may be implemented as a thyristor, a zener diode, or a transient voltage suppression (TVS). The zener diode protects the light emitting chip from electro static discharge (ESD).

9 is a diagram illustrating another example of the light emitting device package of FIG. 1.

Referring to FIG. 9, the light emitting device package may bend the first lead frame 31A into a concave cup structure 15A in a direction deeper than the cavity 15 to increase the heat dissipation area. In addition, the lower portion of the first lead frame 31A is exposed to the fifth side portion 105 of the body 11, thereby radiating heat through air. The fifth side portion S5 of the body 11 is the opposite side of the cavity 15, that is, the opposite side of the front surface of the body 11.

In addition, since the light emitting chip 102 is disposed in the cup structure 15A of the first lead frame 31A, the light reflection efficiency may be improved, and the light distribution may be adjusted.

The light emitting chip 102 is a chip having a vertical electrode structure, and an electrode is disposed below and electrically connected to the first lead frame 31A.

1, a light emitting chip 101 having a horizontal electrode structure as shown in FIG. 1 or a light emitting chip 102 having a vertical electrode structure as shown in FIG. 9 may be selectively used, but embodiments are not limited thereto.

FIG. 10 is a view illustrating a light emitting module having the light emitting device package of FIG. 1.

Referring to FIG. 10, the light emitting module 300 is a light emitting device, and includes at least one of the first and second substrates 201 and 203 facing each other and between the first and second substrates 201 and 203. The light emitting device package 100 is included.

The first and second substrates 201 and 203 may include boards on which a circuit pattern is printed on an insulating layer. For example, a resin-based printed circuit board (PCB) and a metal core PCB may be used. , Flexible PCB, ceramic PCB, FR-4 substrate.

The first substrate 201 includes a metal core PCB, and the metal core PCB further includes a metal layer having better heat dissipation efficiency than other resin-based substrates. For example, the metal core PCB includes a metal layer, an insulating layer on the metal layer, and a laminated structure having a wiring layer on the insulating layer, wherein the metal layer forms a heat conductive metal having a thickness of 0.3 mm or more to increase heat dissipation efficiency. Will let you.

Since the light emitting chip 101 is mounted on the first substrate 201, a material having better heat dissipation efficiency may be used than the second substrate 203.

The second substrate 203 may include a metal core PCB, a resin-based PCB, a ceramic PCB, or a flexible PCB. The second substrate 203 may arrange a resin-based PCB or a PCB made of a ceramic material to prevent a short due to contact with another metal plate.

The first substrate 201 and the second substrate 203 may use the same type of substrate or different types of substrates, but are not limited thereto.

The light emitting device package 100 may be bonded to the first substrate 201 by solder or a conductive tape, and may be bonded to the second substrate 203 by a conductive tape, but is not limited thereto.

As illustrated in FIG. 11, a plurality of light emitting device packages 100 may be arranged at predetermined intervals D1 between the first substrate 201 and the second substrate 203. The plurality of light emitting device packages 100 may be connected in parallel to each other, in series, or mixed in series and parallel according to circuit patterns of the first substrate 201 and the second substrate 203. Can be connected to. The light emitting device package 100 may be connected to the first substrate 201 by solder or conductive tape, and the second substrate 203 may be connected by conductive tape or bonded by solder, but is not limited thereto. Do not.

12 is a view illustrating a light emitting chip of the light emitting device package of FIG. 1.

Referring to FIG. 12, the light emitting chip 101 may include a growth substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second cladding layer ( 121, and a second conductive semiconductor layer 123.

The growth substrate 111 may use a light transmissive, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ At least one of LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on an upper surface of the growth substrate 111, and the plurality of protrusions 112 may be formed through etching of the growth substrate 111, or may include light such as a separate roughness. It may be formed into an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The growth substrate 111 may have a thickness in the range of 30 μm to 150 μm, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma laser deposition (PLD). Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited thereto.

A buffer layer 113 may be formed on the growth substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II to group VI compound semiconductor. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a group III-V group compound semiconductor doped with a first conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

The second clad layer 121 is formed on the active layer 119, and the second clad layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. The compound semiconductor may be formed of, for example, a GaN-based semiconductor. For example, the second clad layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the second cladding layer 121, and the second conductive semiconductor layer 123 includes a dopant of a second conductive type. The second conductive semiconductor layer 123 may be formed of at least one of a group III-V compound semiconductor, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, etc., and may include a single layer or a multilayer. . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, and the first conductive semiconductor layer 117 may be a p-type semiconductor layer. It can be implemented as. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting chip 101 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure 150. ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150, and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on an upper surface of the second conductive semiconductor layer 123, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (AZO). zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. Selected, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 101, and the insulating layer may prevent an interlayer short of the light emitting structure 150 and prevent moisture penetration.

FIG. 13 is a view illustrating the light emitting chip of FIG. 9. FIG.

Referring to FIG. 13, overlapping descriptions of the same components as those of FIG. 12 among the components of the light emitting chip 102 will be omitted.

The current blocking layer 161, the channel layer 163, and the second electrode 170 are disposed under the light emitting structure 150. The current blocking layer 161 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may include at least one of the, at least one may be formed between the channel layer 163.

The current blocking layer 161 is disposed to correspond to the thickness direction of the first electrode 181 and the light emitting structure 150 disposed on the light emitting structure 150. The current blocking layer 161 may block a current supplied from the second electrode 170 and diffuse it in another path.

The channel layer 163 is formed along the bottom edge of the second conductive semiconductor layer 123 and may be formed in a ring shape, a loop shape, or a frame shape. The channel layer 163 may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . It may include. An inner portion of the channel layer 163 is disposed under the second conductive semiconductor layer 123, and an outer portion of the channel layer 163 is disposed outside the side of the light emitting structure 150.

The second electrode 170 may be formed under the second conductive semiconductor layer 123. The second electrode 170 may include a plurality of conductive layers 165, 167, and 169.

The second electrode 170 includes an ohmic contact layer 165, a reflective layer 167, and a bonding layer 169. The ohmic contact layer 165 may be a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or a metal of Ni or Ag. A reflective layer 167 is formed under the ohmic contact layer 165, and the reflective layer 167 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. It may be formed into a structure including at least one layer of a material selected from the group consisting of. The reflective layer 167 may be contacted under the second conductive semiconductor layer 123, and may be in ohmic contact with a metal, or ohmic contact with a low conductive material such as ITO, but is not limited thereto.

A bonding layer 169 is formed below the reflective layer 167, and the bonding layer 169 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, Cr, And at least one of Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A support member 173 is formed below the bonding layer 169, and the support member 173 may be formed as a conductive member. The materials may include copper (Cu-copper), gold (Au-gold), and nickel. (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the support member 173 may be implemented as a conductive sheet.

Here, the substrate of FIG. 1 is removed. The growth method of the growth substrate may be removed by a physical method (eg, laser lift off) or / and a chemical method (eg, wet etching) to expose the first conductive semiconductor layer 117. Isolation is performed in the direction in which the substrate is removed to form a first electrode 181 on the first conductive semiconductor layer 117.

The upper surface of the first conductive semiconductor layer 117 may be formed of a light extraction structure 117A such as roughness. An outer portion of the channel layer 163 may be exposed to an outer side of the sidewall of the light emitting structure 150, and an inner portion of the channel layer 163 may be in contact with a lower surface of the second conductive semiconductor layer 123.

Accordingly, a light emitting device 102 having a vertical electrode structure having a first electrode 181 on the light emitting structure 150 and a support member 173 below may be manufactured.

The light emitting module or substrate according to the embodiment (s) disclosed above may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and may include a display device, another lighting lamp, a traffic light, a vehicle headlight, an electronic signboard, and the like shown in FIG. 14.

14 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 14, the display device 1000 includes a light guide plate 1041, a light emitting module 300 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 300, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse surface light provided from the light emitting module 300 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 300 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 300 is disposed in the bottom cover 1011, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 300 includes a first substrate 201 and a second substrate 203 and a light emitting device package 100 according to an embodiment disposed between the first and second substrates 201 and 203, The light emitting device package 200 may be arrayed at predetermined intervals between the first and second substrates 201 and 203. When the light emitting device package 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, any one of the first and second substrates 201 and 203 may be removed.

The plurality of light emitting device packages 100 may be mounted such that a light exit surface from which light is emitted between the first and second substrates 201 and 203 is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. . The light emitting device 30 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 300, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 300 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 300, but are not limited thereto.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package 11: body
12: support portion 13: reflecting portion
15: cavity 31,41: lead frame
33,43: lead portion 101,102: light emitting chip
201,203: substrate 300: light emitting module

Claims (11)

A body having a cavity;
A first lead frame and a second lead frame disposed in the cavity of the body;
A light emitting chip disposed on any one of the first and second lead frames;
A first lead portion bent from the first lead frame onto a first side portion of the body and disposed on the first side portion of the body; And
And a second lead portion bent from the second lead frame onto a second side portion opposite to the first side portion of the body and disposed on the second side portion of the body. The light emitting device package of claim 1, wherein the first lead portion has a length corresponding to a length of the first side portion of the body. The light emitting device package of claim 2, wherein the second lead portion has a length corresponding to a length of the second side portion of the body. The light emitting device package of claim 1, wherein the first lead portion and the second lead portion face each other below the bottom of the cavity. The light emitting device package of claim 1, wherein the first lead portion and the second lead portion are longer than the length of the cavity disposed between the third side portion and the fourth side portion of the body. The light emitting device package according to any one of claims 1 to 5, wherein the first lead frame includes a cup structure having a depth deeper than the bottom of the cavity in the cavity. The light emitting device package of claim 6, wherein the heat dissipation frame is exposed to a surface opposite to an open surface of the cavity of the body. The light emitting device package of claim 1, wherein at least one of the first and second lead frames includes a hole, and a portion of the body is disposed in the hole. A plurality of light emitting device packages having a light emitting region disposed on a front surface thereof, and a first lead portion disposed on an upper surface thereof and a second lead portion disposed on a lower surface thereof;
A first substrate disposed under the plurality of light emitting device packages; And
And a second substrate disposed on the plurality of light emitting device packages. The method of claim 9, wherein the light emitting device package,
A body having a cavity;
A first lead frame and a second lead frame disposed in the cavity of the body;
A light emitting chip disposed on any one of the first and second lead frames,
The first lead portion is bent from the first lead frame to the lower surface of the body is disposed in a length corresponding to the length of the lower surface of the body,
The second lead portion is bent from the second lead frame to the upper surface opposite to the lower surface of the body has a length corresponding to the length of the upper surface of the body. The method of claim 9 or 10, wherein the first substrate is a resin-based printed circuit board (PCB), metal core (Metal Core) PCB, flexible PCB, ceramic PCB, FR-4 substrate The light emitting device of claim 1, wherein the second substrate has a substrate different from the first substrate.

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