KR101905575B1 - Light emitting device - Google Patents

Abstract

A light emitting device according to an embodiment includes a body having a first cavity opened at an upper portion and having a longer length in a second direction perpendicular to the first direction than a length in the first direction; A second cavity disposed at a bottom of the first cavity and disposed between a third side of the first cavity and a center region and a third cavity disposed between a fourth side of the first cavity and a central region, A first lead frame; A second lead frame disposed to correspond to a central region of the first lead frame among bottom regions of the first cavity; A first light emitting chip disposed in the second cavity and electrically connected to the first lead frame and the second lead frame; A second light emitting chip disposed in the third cavity and electrically connected to the first lead frame and the second lead frame; And a molding member in the first cavity.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device having a novel lead frame structure.

Embodiments provide a light emitting device having a plurality of light emitting chips in different cavity regions of a first lead frame.

The embodiment provides a light emitting element having a protection element in a center side cavity region of the first lead frame.

A light emitting device according to an embodiment includes a body having a first cavity opened at an upper portion and having a longer length in a second direction perpendicular to the first direction than a length in the first direction; A second cavity disposed at a bottom of the first cavity and disposed between a third side of the first cavity and a center region and a third cavity disposed between a fourth side of the first cavity and a central region, A first lead frame; A second lead frame disposed to correspond to a central region of the first lead frame among bottom regions of the first cavity; A first light emitting chip disposed in the second cavity and electrically connected to the first lead frame and the second lead frame; A second light emitting chip disposed in the third cavity and electrically connected to the first lead frame and the second lead frame; And a molding member in the first cavity.

The embodiment can improve the heat radiation efficiency of the light emitting device.

The embodiment can reduce the optical loss due to the protection element.

The embodiment can improve the bending problem of the central region of the light emitting element.

The embodiment can provide a thin thickness of the lead frame of the light emitting element.

By arranging the protection element between the cavities, the embodiment can improve the appearance of the light emitting element.

The embodiment can improve the reliability of the light emitting device and the light unit having the light emitting device.

1 is a perspective view of a light emitting device according to a first embodiment.
2 is a plan view of the light emitting device of FIG.
Fig. 3 is a cross-sectional view of the light-emitting device of Fig. 1 on the AA side.
4 is a cross-sectional view of the light-emitting device of Fig. 1 on the BB side.
5 is a view showing a first lead frame and a second lead frame of the light emitting device of FIG.
6 is a rear view of the light emitting device of FIG.
7 is a side sectional view showing a modification of the light emitting device of FIG. 4 as the light emitting device according to the second embodiment.
8 is a side sectional view showing a modification of the light emitting device of FIG. 4 as the light emitting device according to the third embodiment.
9 is a view illustrating a light emitting chip of a light emitting device according to an embodiment.
10 is a perspective view of a display device having a light emitting element according to an embodiment.
11 is a side cross-sectional view showing another example of a display device having a light emitting element according to the embodiment.
12 shows a perspective view of a lighting apparatus having a light emitting element according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a perspective view of a light emitting device according to a first embodiment, FIG. 2 is a plan view of the light emitting device of FIG. 1, FIG. 3 is a cross- FIG. 5 is a view showing a first lead frame and a second lead frame of the light emitting device of FIG. 1, and FIG. 6 is a rear view of the light emitting device of FIG.

1 to 6, a light emitting device 100 includes a first lead frame 21 having a body 10 having a first cavity 60, a second cavity 22, and a third cavity 23, The second lead frame 31, the light emitting chips 71 and 72, the protection element 73 and the connecting members 74 to 76 and 78. The light emitting device 100 may be defined as a light emitting device package.

The body 10 is polyphthalamide: of (PPA Polyphthalamide), and a resin material, a silicon (Si), metallic material, PSG (photo sensitive glass), sapphire (Al ₂ O _3), a printed circuit board (PCB), such as at least Can be formed. The body 10 may be made of an insulating resin material such as polyphthalamide (PPA) or a material such as silicon.

The body 10 may be formed of a conductor having conductivity. When the body 10 is formed of an electrically conductive material, an insulating film (not shown) is further formed on the surface of the body 10 so that the body 10 and the other lead frames 21 and 31 are electrically short- short).

The top surface shape of the body 10 may have various shapes such as a polygonal shape and a circular shape depending on the use and design of the light emitting device 100. At least a portion of the first lead frame 21 and the second lead frame 31 may be disposed on the bottom of the body 10 and mounted on the substrate in a direct down type, And may be mounted on a substrate in an edge type, but the invention is not limited thereto.

Referring to FIGS. 1 and 2, the body 10 has a first cavity 60 having a top and a side S1-S4 and a bottom. The first cavity 60 may include a concave groove structure or a recessed structure from the top surface 15 of the body 10, but the present invention is not limited thereto. The side surface S1 of the first cavity 60 may be perpendicular or inclined to the bottom. The top view of the first cavity 60 may be circular, elliptical, polygonal (e.g., square).

The body 10 includes a plurality of side surfaces 11 to 14 and at least one of the plurality of side surfaces 11 to 14 may be disposed perpendicular or inclined with respect to a lower surface of the body 10. [ The first side surface 11 and the second side surface 12 are opposite to each other and the third side surface 13 and the second side surface 12 are opposite to each other. The fourth side surfaces 14 are opposite to each other. The first length D1 of the first side surface 11 and the second side surface 12 may be different from the second length D2 of the third side surface 13 and the fourth side surface 14, The first length (i.e., the long side length) D1 of the first side surface 11 and the second side surface 12 is greater than the second length of the third side surface 13 and the fourth side surface 14 Length) D2. Here, the first direction X of the first and second side surfaces 11 and 12 may be the longitudinal direction and the direction passing through the center of the second and third cavities 22 and 23. The first direction X may be a direction orthogonal to the second direction Y. [

The first length D1 may be in a range of 7 mm or more, for example, 8 mm-10 mm, and the second length D2 may be 1.7 mm or more, for example, 1.9 mm-2.1 mm. The first length D1 may be 3.5 times or more, for example, 4 times to 5 times the second length D2.

3, the thickness T1 of the body 10 may be between 1.8 and 2.5 mm, and the interval T2 between the lower surface 16 of the body 10 and the first cavity 60 may be set to, for example, May be less than 1/2 of the thickness T1 of the body 10, for example, in the range of 0.4-0.6 mm.

3, the first lead frame 21 includes a second cavity 22 disposed in a first region between a third side 13 of the body 10 and a central region of the first cavity 60, And a third cavity 23 spaced from the second cavity 22 and disposed in a second region between the fourth side 14 of the body 10 and a central region of the first cavity 60, .

The second cavity 22 and the third cavity 23 are formed at a depth T3 lower than the bottom of the first cavity 60 from the bottom of the first cavity 60, For example, a cup structure or a recessed shape in the direction of the lower surface 16 of the body 10 from the upper surface 27 of the frame 21. [ The bottom of the first cavity 60 may be the top surface 27 of the first lead frame 21.

The first side surface S1 and the second side surface S2 of the first cavity 60 are corresponding to each other and the third side surface S3 and the fourth side surface S4 are formed on the first side surface S1, And are adjacent to the second side surface S2 and corresponding to each other. The distance between the first side surface S1 and the second side surface S2 is the width D4 and the distance between the third side surface S3 and the fourth side surface S4 is the width D3. The width D3 of the first cavity 60 in the first direction X may be two or more times wider than the width D4 of the second cavity Y in the second direction Y perpendicular to the width D3 .

2 to 4, the second lead frame 21 has a first side surface S1 and a second side surface S2 that correspond to the circumferential surface of the first cavity 60, for example, The third side surface S3 and the fourth side surface S4, respectively.

The side surface S21 of the second cavity 22 may be inclined or vertically formed from the bottom of the second cavity 22 and the side surface S22 of the third cavity 23 may be formed in the third cavity 22. [ 23 from the bottom thereof.

The area occupied by the second cavity 22 and the third cavity 23 in the bottom area of the first cavity 60 may be in the range of 25-30%.

2 and 5, the length D9 of the first lead frame 21, for example, the linear length may be a distance between the third side 13 and the fourth side 14 of the body 10, May be shorter than the first length D1 of the long side of the base 10. The first end portions 25-1 and 25-2 of the first lead frame 21 are spaced from the third side surfaces 13 of the body 10 so that the third side surfaces 13 ) Or may not protrude. The second ends 26-1 and 26-2 of the second lead frame 31 are spaced apart from the fourth side 14 of the body 10 and are spaced apart from the fourth side 14 of the body 10. [ Or may not be protruded. Accordingly, it is possible to prevent the moisture from penetrating through the third side surface 13 and the fourth side surface 14 of the body 10.

The first ends 25-1 and 25-2 of the first lead frame 21 may protrude in a plurality of directions and the grooves 25 may be formed between the first ends 25-1 and 25-2. And the first engaging portion 17 of the body 10 can be coupled to the groove 25. [ The second end portions 26-1 and 26-2 of the second lead frame 31 may protrude in a plurality of directions and the grooves 26 may be formed between the second end portions 26-1 and 26-2. And the second engaging portion 18 of the body 10 may be coupled to the groove 26. [ The first engaging portion 17 and the second engaging portion 18 of the body 10 are connected to the first end portions 25-1 and 25-2 of the first lead frame 21 and the second end portions 26-1 , 26-2).

2 and 5, the second width B2 corresponding to the second length D2 of the body 10 among the bottom areas of the second cavity 22 is larger than the first width B2 of the body 10, May be formed to be narrower than the first width B1 corresponding to the length D1 direction. The second width B2 corresponding to the second length D2 of the body 10 in the bottom area of the third cavity 23 corresponds to the first length D1 of the body 10 And may be formed to be narrower than the first width B1. For example, the second width B2 may be 1/3 or more, for example, 1/3 - 1/2 of the first width B1. The second width B2 may be in a range of 0.5 mm or more, for example, 0.85 mm to 0.90 mm. As shown in FIG. 5, the first width B1 may be two times, for example, three times or more than the second width B1. The first width B1 may be in the range of 1.5 mm or more, for example, 1.5 mm to 1.65 mm. The second width B2 of the bottom area of the second and third cavities 22 and 23 can be narrowed as described above by supporting the light emitting element with the first lead frame 21, It is possible to reduce the thickness of the film.

The first lead frame 21 includes a fourth cavity 28 in an area between the second cavity 22 and the third cavity 23 and the fourth cavity 28 includes a second cavity (22) or the third cavity (23). The depth of the fourth cavity 28 may be the same as the depth of the second cavity 22 or the depth of the third cavity 23 (T3 in FIG. 3), or may be set to a shallower depth.

3 and 4, the lower surface 28-1 of the fourth cavity 28 is disposed as a lower surface 16 of the body 10, and the lower surface 28-1 of the fourth cavity 28 is the same as the lower surface 16 of the body 10. [ Or may be exposed on the lower surface 16 of the body 10.

The fourth cavity 28 is disposed in a region between the second cavity 22 and the third cavity 23 to further secure the rigidity in the central region of the first lead frame 21 . This is problematic in that when the first lead frame 21 and the second lead frame 31 are divided from each other along the center line, the central line region of the light emitting device is bent or broken.

The first lead frame 21 is disposed at the bottom of the first cavity 60 of the body 10 and covers at least 70% of the bottom area of the first cavity 60 of the body 10 . The heat generated by the first light emitting chip 71 and the second light emitting chip 72 mounted on the first lead frame 21 can be dissipated effectively.

1 and 5, the width D7 of the first lead frame 21 is a length orthogonal to the length D9 of the first lead frame 21, The distance between the first side 11 and the second side 12 of the body 10 may be shorter than the width of the body 10.

4, the first lead frame 21 includes at least one first lead portion 24 and the first lead portion 24 is connected to the first side 11 of the body 10 And can be bent in the same horizontal plane as the lower surface 16 of the body 10. The first lead part 24 includes a first connection part 24-1 connected to the first lead frame 21 and the first connection part 24-1 extends from the first lead frame 21 And is bent in a direction perpendicular to a direction parallel to the first side 11 of the body 10. The first side 11 of the body 10 is bent in a direction perpendicular to the first side 11 of the body 10. Although the first lead portion 24-1 is protruded outwardly from the first side 11 of the body 10, the first lead portion 24-1 may be disposed under the lower surface adjacent to the first side of the body 10 .

The second lead frame 31 is disposed in a region of the first cavity 60 adjacent to the second side 12 of the body 10 as shown in FIGS. A second lead frame 31 disposed at the bottom of the first cavity 60 is disposed between the second side 12 of the body 10 and a central region between the cavities 22 and 23. The second lead frame 31 is disposed between the second side 12 of the body 10 and the fourth cavity 28. The second lead frame 31 disposed at the bottom of the first cavity 60 may be formed in a polygonal shape or may include a polygonal shape having an inclined surface.

The second cavity 22 and the third cavity 23 may be line-symmetric with respect to the center line of the body 10. Referring to FIG. 5, the interval G1 between the second cavity 22 and the third cavity 23 may be 5 mm or less, for example, 2 mm-4 mm. The gap G1 may be formed to have the same width as the width of the first lead portion 24 or the second lead portion 34, or may have a different width. The second cavity 22 and the third cavity 23 are formed in the first lead frame 21, so that the rigidity in the central region of the light emitting device can be secured.

The gap portion 19 disposed between the first lead frame 21 and the second lead frame 31 may be formed of the material of the body 10. [ Both ends of the gap portion 19 correspond to one side of the first cavity 60 and are adjacent to the second side surface 12 of the body 10, . The width D5 of the first lead frame 21 at the bottom of the first cavity 60 may be wider than the width D6 of the second lead frame 31. [

5, the gap region 19A between the first lead frame 21 and the second lead frame 31 corresponds to the side shape of the second lead frame 31. [

6, the first lead frame 21 has a lower surface 22-1 of the second cavity 22 and a lower surface 23-1 of the third cavity 23 on the lower surface of the body 10 16). The lower surface 22-1 of the second cavity 22 and the lower surface 23-1 of the third cavity 23 may be arranged in the same horizontal plane as the lower surface 16 of the body 10. [ The lower surface 22-1 of the second cavity 22 and the lower surface 23-1 of the third cavity 23 can be used as a lead and a heat radiating plate for supplying power. The lower surface 28-1 of the fourth cavity 28 may be exposed to the lower surface 16 of the body 10 and may be provided as a power supply path.

The first lead frame 21 and the second lead frame 31 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr) And may include at least one of tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorous (P) and may be formed of a single metal layer or a multilayer metal layer. The first and second lead frames 21 and 31 may have the same thickness and may have a thickness ranging from 0.18 to 0.25 mm, for example. The thickness of the first and second lead frames 21 and 31 is set such that the first lead frame 21 is formed over the entire bottom of the first cavity 60 so that the first lead frame 21 and the second lead frame 21 The thickness of the lead frame 31 can be made thinner, for example, 0.2 mm as compared with the lead frame divided on both sides at the center of the first cavity 60. [

At least one first light emitting chip 71 is disposed on the bottom of the second cavity 22 of the first lead frame 21 and at least one second light emitting chip 72 May be disposed.

The first and second light emitting chips 71 and 72 can selectively emit light in a range of visible light band to ultraviolet light band. For example, a red LED chip, a blue LED chip, a green LED chip, a yellow green LED Chip. The first and second light emitting chips 71 and 72 include a light emitting element having a compound semiconductor of group II to VI elements, for example, a group III-V compound semiconductor.

The first connection member 74 connects the first light emitting chip 71 to the first lead frame 21 disposed at the bottom of the second cavity 22 and the second connection member 75 connects the first light- 1 light emitting chip 71 and the second lead frame 31 to each other. The third connection member 76 connects the second light emitting chip 72 and the first lead frame 21 disposed at the bottom of the third cavity 23, And is connected to the second light emitting chip 72 and the second lead frame 31 disposed at the bottom of the first cavity 60.

The protection element 73 is disposed on the bottom of the fourth cavity 28 and connected to the first lead frame 21 and connected to the second lead frame 31 by a fifth connection member 78. [ do. The protection element 73 may be implemented with a thyristor, a zener diode, or a TVS (Transient Voltage Suppression), and the zener diode protects the light emitting chip from electrostatic discharge (ESD). The protective element 73 is disposed in the fourth cavity 28, thereby reducing optical loss and improving light efficiency. As another example, the protection element may be disposed on one area of the first lead frame 21 without the fourth cavity. Or the protection element may not be mounted. The protection element 73 may be disposed on the second lead frame 31, but is not limited thereto.

The protection element 73 is connected to the connection circuit of the first light emitting chip 71 and the second light emitting chip 72 in parallel to protect the light emitting chips 71 and 72. The first through fifth connecting members 74-78 may include conductive wires, but the present invention is not limited thereto.

The center of the first light emitting chip 71 may be disposed on the same line as the second light emitting chip 72. The center of the protection element 73 may be disposed on the same line as the center of the first light emitting chip 71 and the second light emitting chip 72, but is not limited thereto.

The first light emitting chip 71 and the second light emitting chip 72 are separated by a predetermined distance D8, for example, 2.5 mm or more from the central region of the light emitting device. As a result, the side area can be increased rather than the central area of the light emitting element, and the color uniformity can be increased.

3 and 4, the molding member 81 is disposed in at least one of the first cavity 60, the second cavity 22, and the third cavity 23 of the body 10, The molding member 81 includes a light-transmitting resin layer such as silicon or epoxy, and may be formed as a single layer or a multi-layer. The molding member 81 may include a phosphor for changing the wavelength of light emitted from the light emitting chips 71 and 72. The phosphor may partially excite the light emitted from the light emitting chips 71 and 72, And emits light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The fluorescent material may include at least one of a red fluorescent material, a yellow fluorescent material, and a green fluorescent material, but is not limited thereto. The surface of the molding member 81 may be formed of at least one of a flat shape, a concave shape, and a convex shape, but is not limited thereto.

The molding member 81 may be formed in the fourth cavity 28, but the present invention is not limited thereto.

A lens may be further formed on the body 10 and the lens may include a concave or convex lens structure to control the light distribution of the light emitted by the light emitting device 100 . The lens may be in contact with or spaced from the upper surface of the molding member 81, but is not limited thereto.

Fig. 7 is a second embodiment. The second embodiment shows another example of the gap portion in the light emitting element of Fig. 4, and reference is made to Figs. 1 to 3. Fig. In the following description of the second embodiment, a duplicate description will be omitted for the same parts as those in the above embodiment.

Referring to Fig. 7, in the light emitting element, the gap portion 19 includes the moisture preventing member 19-1. The moisture barrier member 19-1 is formed to be wider than the gap between the first lead frame 21 and the second lead frame 31 so that the first lead frame 21, (31). Accordingly, moisture penetrating through the gap portion 19 and the interface between the first lead frame 21 and the second lead frame 31 can be suppressed or blocked.

8 is a side sectional view showing a modification of the light emitting device of FIG. 4 as the light emitting device according to the third embodiment.

Referring to FIG. 8, the light emitting device may be formed with the moisture prevention patterns P1 and P2 on the first lead frame 21 and the second lead frame 31, respectively. The moisture prevention patterns P1 and P2 are formed on the lower surface of the first lead frame 21 corresponding to the gap portion 19 and the lower surface of the second lead frame 31. [ The moisture prevention patterns P1 and P2 can increase the contact area between the gap portion 19 and the first lead frame 21 and the second lead frame 31, .

As another example, the first lead frame 21 and the second lead frame 31 may be formed in a stepped structure in a region corresponding to the gap portion 19, but the present invention is not limited thereto.

9 is a view showing light emitting chips 71 and 72 of the light emitting device of FIG. For convenience of explanation, the first light emitting chip 71 will be described.

9, the light emitting chip 71 includes a growth substrate 111, a buffer layer 113, a low conductivity layer 115, a first conductivity type semiconductor layer 117, an active layer 119, And a semiconductor layer 123.

The growth substrate 111 may take advantage of a light-transmitting, insulating or conductive substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ , And LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on the upper surface of the growth substrate 111. The plurality of protrusions 112 may be formed through etching of the growth substrate 111, And may be formed as an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the growth substrate 111 may be in the range of 30 탆 to 150 탆, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111. The growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition ), A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), and the like.

A buffer layer 113 may be formed on the growth substrate 111 and the buffer layer 113 may be formed of at least one layer using Group II to VI compound semiconductors. The buffer layer 113 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, + y? 1), and includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer 113 may be formed in a superlattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to mitigate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in a range of 30 to 500 nm, but is not limited thereto.

A low conductivity layer 115 is formed on the buffer layer 113 and the low conductivity layer 115 is an undoped semiconductor layer and has lower electrical conductivity than the first conductivity type semiconductor layer 117. The low conduction layer 115 may be formed of a GaN-based semiconductor using a Group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type property without intentionally doping the conduction type dopant. The undoped semiconductor layer may not be formed, but the present invention is not limited thereto. The low conductivity layer 115 may be formed between the plurality of first conductivity type semiconductor layers 117.

The first conductivity type semiconductor layer 117 may be formed on the low conductivity layer 115. The first conductivity type semiconductor layer 117 is formed of a Group III-V compound semiconductor doped with the first conductivity type dopant, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? X + y? 1). When the first conductivity type semiconductor layer 117 is an n-type semiconductor layer, the first conductivity type dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

At least one of the low conductivity layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which a first layer and a second layer are alternately arranged, And the thickness of the second layer may be formed to be several angstroms or more.

A first clad layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first clad layer may be formed of a GaN-based semiconductor. The first cladding layer serves to constrain the carrier. As another example, the first clad layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include n-type and / or p-type dopants, and may be formed of, for example, a first conductive type or a low conductive semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi-well, a multiple quantum well (MQW), a quantum wire, and a quantum dot structure. The active layer 119 may be a well layer and a barrier layer alternately arranged, and the well layer may be a well layer having a continuous energy level. Also, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? y ≤ 1). The pair of the well layer and the barrier layer includes at least one of InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN and InAlGaN / InAlGaN.

The active layer 119 can selectively emit light within a wavelength range from the ultraviolet band to the visible light band, and can emit a peak wavelength ranging from 420 nm to 450 nm, for example.

A second cladding layer 121 may be formed on the active layer 119. The second cladding layer 121 may have a higher bandgap than the bandgap of the barrier layer of the active layer 119, V compound semiconductor, for example, a GaN-based semiconductor. For example, the second cladding layer 121 may include a GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second cladding layer 121 may include an n-type or p-type dopant, for example, a second conductive type or a low conductivity type semiconductor layer.

A second conductive semiconductor layer 123 is formed on the active layer 119 or the second clad layer 121 and the second conductive semiconductor layer 123 includes a dopant of a second conductivity type. The second conductive semiconductor layer 123 may be formed of at least one of Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, the first conductive semiconductor layer 117 may be a p-type semiconductor layer, Lt; / RTI > Also, an n-type semiconductor layer may be further formed on the second conductive semiconductor layer 123, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type. The light emitting chip 71 may be defined as a light emitting structure 150 of the first conductivity type semiconductor layer 117, the active layer 119 and the second conductivity type semiconductor layer 123. The light emitting structure 150 ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150 and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 may be formed of a material having permeability and electrical conductivity as a current diffusion layer. The electrode layer 141 may have a refractive index lower than the refractive index of the compound semiconductor layer.

The electrode layer 141 is formed on the upper surface of the second conductive type semiconductor layer 123. The material of the electrode layer 141 includes a light-transmitting conductive layer or a reflective conductive layer. Examples of the conductive layer include ITO (indium tin oxide), IZO (indium zinc oxide) IZTO (indium zinc oxide), IZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO oxide, ZnO, IrOx, RuOx, NiO, or the like, and may be formed of at least one layer. The electrode layer 141 may be formed of a reflective electrode layer, for example, Al, Ag, Pd, Rh, Pt, Ir, or an alloy of two or more thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further have a current diffusion pattern of an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode (143) is formed on a part of the first conductive type semiconductor layer (117). The first electrode 143 and the second electrode 145 may be formed of at least one layer of a metallic material such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ge, Ag, Au, and their alloys.

An insulating layer may further be formed on the surface of the light emitting chip 71. The insulating layer may prevent a short between layers of the light emitting structure 150 and prevent moisture penetration.

The light emitting chip 71 may further include a phosphor layer on the upper portion, but the present invention is not limited thereto.

As another example of the light emitting device, a light emitting device including a chip having a vertical electrode structure may be provided. In the chip having the vertical electrode structure, a first electrode is formed on the semiconductor layer, May be formed to correspond to each other.

The light emitting device according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting elements are arrayed, and includes the display apparatus shown in Figs. 10 and 11, the illumination apparatus shown in Fig. 12, and the light unit such as illumination lamp, traffic light, vehicle headlight, Unit. ≪ / RTI >

10 is an exploded perspective view of a display device according to an embodiment.

10, a display device 1000 includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 1031 and the reflecting member 1022 , But is not limited thereto.

The bottom cover 1011, the reflecting member 1022, the light guide plate 1041 and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light emitting module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

At least one light emitting module 1031 may be disposed in the bottom cover 1011 and may directly or indirectly provide light from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device 100 according to the embodiment described above and the light emitting device 100 may be arrayed on the substrate 1033 at predetermined intervals. The substrate may be, but is not limited to, a printed circuit board. The substrate 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device 100 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting devices 100 may be mounted on the substrate 1033 such that the light emitting surface of the plurality of light emitting devices 100 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device 100 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

11 is a view showing a display device having a light emitting element according to an embodiment.

11, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device 100 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1160. The bottom cover 1152, at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1160 and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1160.

12 is a perspective view of a lighting apparatus according to an embodiment.

12, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device 100 mounted on the substrate 1532 according to an embodiment. A plurality of the light emitting devices 100 may be arrayed in a matrix or at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device 100 may be mounted on the substrate 1532. Each of the light emitting devices 100 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue or white, or a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting devices 100 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: body, 21,31: lead frame
22: second cavity 23: third cavity
28: fourth cavity 23, 34:
60: first cavity 71: first light emitting chip
72: second light emitting chip 73: protective element

Claims (15)

A body having a first cavity opened at an upper portion and having a longer length in a second direction perpendicular to the first direction than a length in the first direction;
A second cavity disposed at a bottom of the first cavity and disposed between a third side of the first cavity and a center region and a third cavity disposed between a fourth side of the first cavity and a central region, A first lead frame;
A second lead frame disposed to correspond to a central region of the first lead frame among bottom regions of the first cavity;
A protective element disposed on the first lead frame and electrically connected to the first lead frame and the second lead frame;
A first light emitting chip disposed in the second cavity and electrically connected to the first lead frame and the second lead frame;
A second light emitting chip disposed in the third cavity and electrically connected to the first lead frame and the second lead frame; And
And a molding member in the first cavity,
Wherein the first lead frame includes a fourth cavity disposed in an area between the second cavity and the third cavity,
And the protection element is disposed in the fourth cavity. [2] The apparatus of claim 1, further comprising: a first lead portion protruded from the first lead frame to a first side of the body; And a second lead portion protruding from the second lead frame to a second side opposite to the first side of the body. The light emitting device according to claim 2, wherein a distance between a third side surface and a fourth side surface of the first cavity corresponding to each other is greater than two times greater than a distance between the first side surface and the second side surface corresponding to each other. The light emitting device according to claim 3, wherein the first lead frame is disposed under the first to fourth sides of the first cavity, respectively. The light emitting device according to claim 3, wherein the first lead frame is formed to be 70% or more of a bottom area of the first cavity. delete delete The electronic device according to claim 1, wherein the body includes a gap portion disposed between the first lead frame and the second lead frame,
And both ends of the gap portion are connected to a second side of the first cavity. 9. The light emitting device according to claim 8, wherein the gap portion includes a moisture-preventing member in contact with an upper surface of the first lead frame and the second lead frame. The light emitting device according to claim 8, further comprising a moisture-proof pattern on a surface of the first lead frame and the second lead frame corresponding to the gap portion. The light emitting device of claim 1, wherein the first end of the first lead frame is disposed in a plurality of locations below the third side of the first cavity and is spaced from the third side of the body. delete The light emitting device of claim 1, wherein a first width in the first direction of the bottom region of the second cavity is at least two times larger than a second width in the second direction. The light emitting device of claim 1, wherein the second cavity of the first lead frame and the lower surface of the fourth cavity are exposed on a lower surface of the body. The light emitting device of claim 1, wherein a bottom surface of the fourth cavity is exposed on a lower surface of the body.

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