KR20130074561A - Light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to have a thin lead frame. CONSTITUTION: A body (10) has a first cavity (60). A first lead frame (21) has a second cavity (22) and a third cavity (23). A second lead frame (31) is formed in the central region of the first lead frame. A first light emitting chip (71) is electrically connected to the first lead frame and the second lead frame. A second light emitting chip (72) is electrically connected to the first lead frame and the second lead frame.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device having a new lead frame structure.

The embodiment provides a light emitting device having a plurality of light emitting chips in different cavity regions of a first lead frame.

The embodiment provides a light emitting device having a protection device in the center side cavity region of the first lead frame.

The light emitting device according to the embodiment may include: a body having a first cavity having an upper portion and having a length longer in a second direction orthogonal to the first direction than a length in a first direction; A second cavity disposed on the bottom of the first cavity, the second cavity disposed between the third side and the center region of the first cavity, and a third cavity disposed between the fourth side and the center region of the first cavity. A first lead frame; A second lead frame disposed corresponding to a center area of the first lead frame among the bottom areas of the first cavity; A first light emitting chip disposed in the second cavity and electrically connected to the first lead frame and the second lead frame; A second light emitting chip disposed in the third cavity and electrically connected to the first lead frame and the second lead frame; And a molding member in the first cavity.

The embodiment can improve the heat radiation efficiency of the light emitting device.

The embodiment can reduce the light loss caused by the protection device.

The embodiment can improve the bending problem of the central region of the light emitting device.

The embodiment can provide a thin thickness of the lead frame of the light emitting device.

According to the embodiment, the appearance of the light emitting device may be improved by disposing the protection device between the cavities.

The embodiment can improve the reliability of the light emitting device and the light unit having the light emitting device.

1 is a perspective view of a light emitting device according to a first embodiment.
2 is a plan view of the light emitting device of FIG.
3 is a cross-sectional view taken along the AA side of the light emitting device of FIG. 1.
4 is a cross-sectional view of the light-emitting device of Fig. 1 on the BB side.
5 is a view illustrating a first lead frame and a second lead frame of the light emitting device of FIG. 1.
6 is a rear view of the light emitting device of FIG. 1.
FIG. 7 is a side cross-sectional view illustrating a modified example of the light emitting device of FIG. 4 as the light emitting device according to the second embodiment.
8 is a side cross-sectional view illustrating a modified example of the light emitting device of FIG. 4 as the light emitting device according to the third embodiment.
9 is a view showing a light emitting chip of a light emitting device according to an embodiment.
10 is a perspective view of a display device having a light emitting element according to an embodiment.
11 is a side cross-sectional view showing another example of a display device having a light emitting element according to the embodiment.
12 is a perspective view of a lighting device having a light emitting device according to the embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. In addition, the size of each component does not necessarily reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a perspective view of a light emitting device according to a first embodiment, FIG. 2 is a plan view of the light emitting device of FIG. 1, FIG. 3 is a cross-sectional view of the light emitting device of FIG. 1, and FIG. 4 is a light emitting device of FIG. 1. 5 is a cross-sectional view of the light emitting device of FIG. 1, illustrating a first lead frame and a second lead frame of the light emitting device of FIG. 1, and FIG.

1 to 6, the light emitting device 100 includes a first lead frame 21 having a body 10 having a first cavity 60, a second cavity 22, and a third cavity 23. And a second lead frame 31, light emitting chips 71 and 72, a protection element 73, and connection members 74 to 76 and 78. The light emitting device 100 may be defined as a light emitting device package.

The body 10 may include at least one of a resin material such as polyphthalamide (PPA), silicon (Si), a metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and a printed circuit board (PCB). It can be formed as one. The body 10 may be made of an insulating resin material such as polyphthalamide (PPA) or a material such as silicon.

The body 10 may be formed of a conductive material. When the body 10 is formed of a material having electrical conductivity, an insulating film (not shown) is further formed on the surface of the body 10 such that the body 10 and the other lead frames 21 and 31 are electrically shorted with each other. can be configured to prevent shorting).

The top shape of the body 10 may have various shapes such as polygons and circles according to the use and design of the light emitting device 100. At least a portion of the first lead frame 21 and the second lead frame 31 may be disposed on the bottom of the body 10 to be mounted on a substrate in a direct type, and disposed on the side of the body 10. The edge type may be mounted on the substrate, but is not limited thereto.

1 and 2, the body 10 has an open top and has a first cavity 60 composed of side surfaces S1-S4 and a bottom. The first cavity 60 may include a groove structure or a recess structure concave from the upper surface 15 of the body 10, but is not limited thereto. The side surface S1 of the first cavity 60 may be perpendicular to or inclined with respect to the floor. The shape of the first cavity 60 viewed from above may be circular, elliptical, or polygonal (eg, rectangular).

The body 10 may include a plurality of side surfaces 11 to 14, and at least one of the plurality of side surfaces 11 to 14 may be disposed perpendicularly or inclined with respect to the bottom surface of the body 10. The body 10 describes first to fourth side surfaces 11 to 14 as an example, and the first side surface 11 and the second side surface 12 are opposite to each other, and the third side surface 13 and The fourth side surfaces 14 are opposite sides. The first length D1 of the first side surface 11 and the second side surface 12 may be different from the second length D2 of the third side surface 13 and the fourth side surface 14. The first length (ie, the long side length) D1 of the first side 11 and the second side 12 is the second length (ie, the short side) of the third side 13 and the fourth side 14. Longer than the length D2). Here, the first direction X of the first and second side surfaces 11 and 12 may be a longitudinal direction and may be a direction passing through the centers of the second and third cavities 22 and 23. The first direction X may be a direction orthogonal to the second direction Y. FIG.

The first length D1 may be formed in a range of 7 mm or more, for example, 8 mm-10 mm, and the second length D2 may be formed in a range of 1.7 mm or more, for example, 1.9 mm-2.1 mm. The first length D1 may be formed to be 3.5 times or more, for example, 4 to 5 times longer than the second length D2.

As shown in FIG. 3, the thickness T1 of the body 10 may be formed between 1.8 and 2.5 mm, and the interval T2 between the lower surface 16 of the body 10 and the first cavity 60. Is less than 1/2 of the thickness T1 of the body 10, for example, may be formed in the range 0.4-0.6mm.

Referring to FIG. 3, the first lead frame 21 is a second cavity 22 disposed in a first area between the third side surface 13 of the body 10 and the central area of the first cavity 60. ) And a third cavity 23 spaced apart from the second cavity 22 and disposed in a second region between the fourth side surface 14 of the body 10 and the central region of the first cavity 60. Include.

The second cavity 22 and the third cavity 23 are formed at a lower depth T3 from the bottom of the first cavity 60 than the bottom of the first cavity 60, and the first lead. And a concave shape, for example, a cup structure or a recess shape, from the upper surface 27 of the frame 21 toward the lower surface 16 of the body 10. The bottom of the first cavity 60 may be the top surface 27 of the first lead frame 21.

The first side surface S1 and the second side surface S2 of the first cavity 60 correspond to each other, and the third side surface S3 and the fourth side surface S4 are the first side surface S1 and the first side surface S1. The surfaces are adjacent to the second side surface S2 and correspond to each other. An interval between the first side surface S1 and the second side surface S2 is a width D4, and an interval between the third side surface S3 and the fourth side surface S4 is a width D3. The width D3 of the first direction X of the first cavity 60 may be more than twice as wide as the width D4 of the second direction Y that is orthogonal to the width D3. .

As shown in FIGS. 2 to 4, the second lead frame 21 corresponds to a circumferential surface of the first cavity 60, for example, the first side surface S1 and the second side surface S2, which correspond to each other. It is arrange | positioned under the 3rd side surface S3 and the 4th side surface S4, respectively.

The side surface S21 of the second cavity 22 may be inclined or vertically formed from the bottom of the second cavity 22, and the side surface S22 of the third cavity 23 may be formed in the third cavity 22. 23 may be inclined or formed vertically from the bottom.

The area occupied by the second cavity 22 and the third cavity 23 in the bottom area of the first cavity 60 may be formed in a range of 25-30%.

As shown in FIGS. 2 and 5, the length D9 of the first lead frame 21, for example, the straight line length, is the distance between the third side surface 13 and the fourth side surface 14 of the body 10, that is, the body. It may be formed shorter than the first length D1 of the long side of (10). Accordingly, the first end portions 25-1 and 25-2 of the first lead frame 21 are spaced apart from the third side surface 13 of the body 10 and the third side surface 13 of the body 10. ) May not be exposed or protrude. In addition, the second ends 26-1 and 26-2 of the second lead frame 31 are spaced apart from the fourth side 14 of the body 10 and the fourth side 14 of the body 10. May not be exposed or protrude. Accordingly, it is possible to prevent moisture penetration through the third side surface 13 and the fourth side surface 14 of the body 10.

A plurality of first ends 25-1 and 25-2 of the first lead frame 21 may protrude, and a groove 25 is formed between the plurality of first ends 25-1 and 25-2. Is formed, the first coupling portion 17 of the body 10 can be coupled to the groove 25. A plurality of second ends 26-1 and 26-2 of the second lead frame 31 may protrude, and a groove 26 is formed between the plurality of second ends 26-1 and 26-2. Is formed, the groove 26 may be coupled to the second coupling portion 18 of the body 10. The first coupling part 17 and the second coupling part 18 of the body 10 are the first ends 25-1 and 25-2 and the second end 26-1 of the first lead frame 21. , 26-2) will increase the binding force.

2 and 5, the second width B2 corresponding to the direction of the second length D2 of the body 10 in the bottom area of the second cavity 22 is the first width of the body 10. It may be formed narrower than the first width B1 corresponding to the length (D1) direction. The second width B2 corresponding to the direction of the second length D2 of the body 10 in the bottom area of the third cavity 23 corresponds to the direction of the first length D1 of the body 10. It may be formed narrower than the first width (B1). For example, the second width B2 may be formed in a range of 1/3 or more, for example, 1 / 3-1 / 2, than the first width B1. The second width B2 may be formed in a range of 0.5 mm or more, for example, 0.85 mm to 0.90 mm. As illustrated in FIG. 5, the first width B1 may be formed twice as long as the second width B1, for example, three times or more. The first width B1 may be formed in a range of 1.5 mm or more, for example, 1.5 mm to 1.65 mm. By supporting the light emitting element with the first lead frame 21, the second width B2 can be narrowed among the bottom regions of the second and third cavities 22 and 23 as described above, and the side view type light unit is provided. It is effective to reduce the thickness of the.

The first lead frame 21 includes a fourth cavity 28 in an area between the second cavity 22 and the third cavity 23, and the fourth cavity 28 is the second cavity. Or a narrower region than the third cavity 23. The depth of the fourth cavity 28 may be formed to the same depth as the depth of the second cavity 22 or the third cavity 23 (T3 of FIG. 3), or may be formed to have a shallower depth.

3 and 4, the lower surface 28-1 of the fourth cavity 28 is disposed as the lower surface 16 of the body 10, which is the same as the lower surface 16 of the body 10. It may be formed on a horizontal plane or exposed on the lower surface 16 of the body 10.

In addition, the fourth cavity 28 is disposed in an area between the second cavity 22 and the third cavity 23, thereby further securing rigidity in the center area of the first lead frame 21. Can be. This is because when the first lead frame 21 and the second lead frame 31 are divided from each other along the center line, the center line region of the light emitting device is bent or broken.

The first lead frame 21 is disposed on the bottom of the first cavity 60 of the body 10 and covers 70% or more of the bottom area of the first cavity 60 of the body 10. . Accordingly, heat generated by the first light emitting chip 71 and the second light emitting chip 72 mounted on the first lead frame 21 may be effectively dissipated.

1 and 5, the width D7 of the first lead frame 21 is a length in a direction orthogonal to the length D9 direction of the first lead frame 21 and the body 10. The distance between the first side 11 and the second side 12 of the, that is, may be formed shorter than the width of the body (10).

As shown in FIG. 4, the first lead frame 21 includes at least one first lead part 24, and the first lead part 24 is connected to the first side 11 of the body 10. It may protrude and be bent in the same horizontal plane as the lower surface 16 of the body 10. The first lead part 24 includes a first connector 24-1 connected to the first lead frame 21, and the first connector 24-1 is connected to the first lead frame 21. It protrudes to the first side 11 of the body 10 and is bent in a direction perpendicular to the direction parallel to the first side 11 of the body 10. The first lead part 24-1 is described as a structure that protrudes outwardly from the first side surface 11 of the body 10, but may be disposed below the bottom surface adjacent to the first side surface of the body 10. Can be.

2 and 4, the second lead frame 31 is disposed in an area of the first cavity 60 adjacent to the second side surface 12 of the body 10. The second lead frame 31 disposed on the bottom of the first cavity 60 is disposed between the second side 12 of the body 10 and a center region between the cavities 22 and 23. In addition, the second lead frame 31 is disposed between the second side surface 12 of the body 10 and the fourth cavity 28. The second lead frame 31 disposed on the bottom of the first cavity 60 may be formed in a polygonal shape or may include a polygonal shape having an inclined surface.

The second cavity 22 and the third cavity 23 may be linearly symmetric with respect to the center line of the body 10. Referring to FIG. 5, the gap G1 between the second cavity 22 and the third cavity 23 may be formed in a range of 5 mm or less, for example, 2 mm-4 mm. The gap G1 may be formed to have the same width as that of the first lead part 24 or the second lead part 34, or may have a different width. By forming the second cavity 22 and the third cavity 23 in the first lead frame 21, it is possible to secure the rigidity in the central region of the light emitting device.

The gap portion 19 disposed between the first lead frame 21 and the second lead frame 31 may be formed of a material of the body 10. Both ends of the gap portion 19 correspond to one side of the first cavity 60, and are adjacent to the second side surface 12 of the body 10 and have a first side surface 11 of the body 10. Spaced apart). The width D5 of the first lead frame 21 at the bottom of the first cavity 60 may be wider than the width D6 of the second lead frame 31.

As shown in FIG. 5, the gap region 19A between the first lead frame 21 and the second lead frame 31 corresponds to the side shape of the second lead frame 31.

As shown in FIG. 6, the first lead frame 21 has a lower surface 22-1 of the second cavity 22 and a lower surface 23-1 of the third cavity 23 having a lower surface of the body 10 ( 16). The lower surface 22-1 of the second cavity 22 and the lower surface 23-1 of the third cavity 23 may be disposed in the same horizontal plane as the lower surface 16 of the body 10. The lower surface 22-1 of the second cavity 22 and the lower surface 23-1 of the third cavity 23 may be used as leads and heat radiating plates for supplying power. The lower surface 28-1 of the fourth cavity 28 may be exposed to the lower surface 16 of the body 10, and may be provided as a power supply path.

The first lead frame 21 and the second lead frame 31 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum. It may include at least one of aluminum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed of a single metal layer or a multilayer metal layer. The first and second lead frames 21 and 31 may be formed to have the same thickness, for example, in the range of 0.18 to 0.25 mm. The thickness of the first and second lead frames 21 and 31 may be such that the first lead frame 21 is formed over the entire bottom of the first cavity 60, and thus, the first lead frame 21 and the second lead frame 21. The thickness of the lead frame 31 may be formed to be thinner, for example, 0.2 mm compared to the lead frame divided into two sides at the center of the first cavity 60.

At least one first light emitting chip 71 is disposed at the bottom of the second cavity 22 of the first lead frame 21, and at least one second light emitting chip 72 is disposed at the bottom of the third cavity 23. ) May be arranged.

The first and second light emitting chips 71 and 72 can selectively emit light in a range of visible light band to ultraviolet light band. For example, a red LED chip, a blue LED chip, a green LED chip, a yellow green LED Chip. The first and second light emitting chips 71 and 72 include light emitting devices having a compound semiconductor of Group II to Group VI elements, for example, a Group III-V compound semiconductor.

The first connection member 74 connects the first light emitting chip 71 and the first lead frame 21 disposed on the bottom of the second cavity 22, and the second connection member 75 is formed of the first connection member 75. The first light emitting chip 71 and the second lead frame 31 are connected to each other. The third connection member 76 connects the second light emitting chip 72 and the first lead frame 21 disposed on the bottom of the third cavity 23 to each other, and the fourth connection member 77 is The second light emitting chip 72 is connected to the second lead frame 31 disposed at the bottom of the first cavity 60.

The protection element 73 is disposed on the bottom of the fourth cavity 28, is connected to the first lead frame 21, and is connected to the second lead frame 31 by a fifth connecting member 78. do. The protection element 73 may be implemented as a thyristor, a zener diode, or a transient voltage suppression (TVS), and the zener diode protects the light emitting chip from electro static discharge (ESD). Since the protection element 73 is disposed in the fourth cavity 28, light loss may be reduced to improve light efficiency. As another example, the protection element may be disposed on one region of the first lead frame 21 without the fourth cavity. Alternatively, the protection element may not be mounted. In addition, the protection element 73 may be disposed on the second lead frame 31, but is not limited thereto.

The protection element 73 may be connected to the connection circuits of the first light emitting chip 71 and the second light emitting chip 72 in parallel, thereby protecting the light emitting chips 71 and 72. The first to fifth connection members 74 to 78 may include conductive wires, but are not limited thereto.

The center of the first light emitting chip 71 may be disposed on the same line as the second light emitting chip 72. The center of the protection element 73 may be disposed on the same line as the center of the first light emitting chip 71 and the second light emitting chip 72, but is not limited thereto.

The first light emitting chip 71 and the second light emitting chip 72 are spaced apart from the central area of the light emitting device by a predetermined distance D8, for example, 2.5 mm or more. Accordingly, it is possible to increase the side area rather than the center area of the light emitting device, thereby increasing color uniformity.

3 and 4, a molding member 81 is disposed in at least one of the first cavity 60, the second cavity 22, and the third cavity 23 of the body 10. The molding member 81 includes a light transmissive resin layer such as silicone or epoxy, and may be formed in a single layer or multiple layers. The molding member 81 may include a phosphor for changing a wavelength of light emitted from the light emitting chips 71 and 72, and the phosphor excites a part of light emitted from the light emitting chips 71 and 72. To emit light of different wavelengths. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but is not limited thereto. The surface of the molding member 81 may be formed of at least one of a flat shape, a concave shape, and a convex shape, but is not limited thereto.

The molding member 81 may be formed in the fourth cavity 28, but is not limited thereto.

A lens may be further formed on the upper portion of the body 10, and the lens may include a concave or / and convex lens structure to adjust light distribution of light emitted from the light emitting device 100. Can be. The lens may contact or be spaced apart from an upper surface of the molding member 81, but is not limited thereto.

7 is a second embodiment. The second embodiment shows another example of the gap portion in the light emitting device of FIG. 4, with reference to FIGS. 1 to 3. In the description of the second embodiment, the same description as the above embodiment will be omitted.

Referring to FIG. 7, the gap portion 19 of the light emitting device includes a moisture preventing member 19-1. The moisture preventing member 19-1 is formed to be wider than an interval between the first lead frame 21 and the second lead frame 31, so that the first lead frame 21 and the second lead frame are larger. It is in contact with the upper surface of 31. Accordingly, moisture penetrating through the interface between the gap portion 19, the first lead frame 21, and the second lead frame 31 may be suppressed or blocked.

8 is a side cross-sectional view illustrating a modified example of the light emitting device of FIG. 4 as the light emitting device according to the third embodiment.

Referring to FIG. 8, moisture light emitting patterns P1 and P2 may be formed in the first lead frame 21 and the second lead frame 31. The moisture prevention patterns P1 and P2 are formed on the bottom surface of the first lead frame 21 and the bottom surface of the second lead frame 31 corresponding to the gap portion 19. The moisture prevention patterns P1 and P2 may increase the contact area between the gap portion 19, the first lead frame 21, and the second lead frame 31, thereby preventing moisture intrusion. Can be.

As another example, the first lead frame 21 and the second lead frame 31 may be formed in a stepped structure in an area corresponding to the gap 19, but is not limited thereto.

FIG. 9 is a view illustrating light emitting chips 71 and 72 of the light emitting device of FIG. 1. For convenience of explanation, the first light emitting chip 71 will be described.

Referring to FIG. 9, the light emitting chip 71 may include a growth substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second conductive type. The semiconductor layer 123 may be included.

The growth substrate 111 may use a light transmissive, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ At least one of LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on an upper surface of the growth substrate 111, and the plurality of protrusions 112 may be formed through etching of the growth substrate 111, or may include light such as a separate roughness. It may be formed into an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The growth substrate 111 may have a thickness in the range of 30 μm to 150 μm, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma laser deposition (PLD). Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited thereto.

A buffer layer 113 may be formed on the growth substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II to group VI compound semiconductor. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a group III-V group compound semiconductor doped with a first conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, InAlGaN / InAlGaN.

The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

A second cladding layer 121 may be formed on the active layer 119, and the second cladding layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. It may be formed of a group V compound semiconductor, for example, a GaN-based semiconductor. For example, the second clad layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the active layer 119 or the second cladding layer 121, and the second conductive semiconductor layer 123 includes a dopant of a second conductive type. The second conductive semiconductor layer 123 may be formed of at least one of a group III-V compound semiconductor, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, etc., and may include a single layer or a multilayer. . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, and the first conductive semiconductor layer 117 may be a p-type semiconductor layer. It can be implemented as. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting chip 71 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure 150. ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150, and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on an upper surface of the second conductive semiconductor layer 123, and the material includes a transmissive conductive layer or a reflective conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc (GZO) oxide), ZnO, IrOx, RuOx, NiO and the like, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are formed of at least one layer of a metallic material such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au and their optional alloys can be selected.

An insulating layer may be further formed on the surface of the light emitting chip 71, and the insulating layer may prevent an interlayer short of the light emitting structure 150 and prevent moisture penetration.

A phosphor layer may be further disposed on the light emitting chip 71, but is not limited thereto.

As another example of the light emitting device, the light emitting device may be provided as a chip having a vertical electrode structure. The structure may be formed to correspond to each other.

The light emitting device according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting elements are arranged, and includes a display device as shown in FIGS. 10 and 11 and a lighting device as shown in FIG. 12. Can be applied to the unit.

10 is an exploded perspective view of a display device according to an embodiment.

Referring to FIG. 10, the display apparatus 1000 includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective member 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be disposed in the bottom cover 1011, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device 100 according to the exemplary embodiment disclosed above, and the light emitting device 100 may be arranged on the substrate 1033 at predetermined intervals. The substrate may be a printed circuit board, but is not limited thereto. In addition, the substrate 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device 100 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting devices 100 may be mounted on the substrate 1033 such that an emission surface on which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

11 is a view showing a display device having a light emitting element according to an embodiment.

Referring to FIG. 11, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1160. The bottom cover 1152, the at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1160 and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1160.

12 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 12, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device 100 according to an embodiment mounted on the substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device 100 may be mounted on the substrate 1532. Each of the light emitting devices 100 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be disposed to have a combination of various light emitting devices 100 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: body, 21, 31: lead frame
22: 2nd cavity 23: 3rd cavity
28: fourth cavity 23,34: lead portion
60: first cavity 71: first light emitting chip
72: second light emitting chip 73: protection device

Claims (15)

A body having an upper opening and having a first cavity having a length longer in a second direction orthogonal to the first direction than a length in a first direction;
A second cavity disposed on the bottom of the first cavity, the second cavity disposed between the third side and the center region of the first cavity, and a third cavity disposed between the fourth side and the center region of the first cavity. A first lead frame;
A second lead frame disposed corresponding to a center area of the first lead frame among the bottom areas of the first cavity;
A first light emitting chip disposed in the second cavity and electrically connected to the first lead frame and the second lead frame;
A second light emitting chip disposed in the third cavity and electrically connected to the first lead frame and the second lead frame; And
The light emitting device comprising a molding member in the first cavity. According to claim 1, A first lead portion protruding from the first lead frame to the first side of the body; And a second lead portion protruding from the second lead frame to a second side opposite to the first side of the body. 3. The light emitting device of claim 2, wherein the first cavity has a distance between the third side and the fourth side corresponding to each other more than twice as much as the distance between the first side and the second side corresponding to each other. The light emitting device of claim 3, wherein the first lead frames are disposed under the first to fourth side surfaces of the first cavity, respectively. The light emitting device of claim 3, wherein the first lead frame is formed to at least 70% of the bottom area of the first cavity. The light emitting device of claim 1, further comprising a protection device disposed on the first lead frame and electrically connected to the first lead frame and the second lead frame. The light emitting device of claim 6, wherein the first lead frame includes a fourth cavity disposed in an area between the second cavity and the third cavity, and the protection device is disposed in the fourth cavity. The method of claim 1, wherein the body includes a gap disposed between the first lead frame and the second lead frame,
Both ends of the gap portion is connected to the second side surface of the first cavity. The light emitting device of claim 8, wherein the gap part comprises a moisture preventing member in contact with an upper surface of the first lead frame and the second lead frame. The light emitting device of claim 8, further comprising a moisture barrier pattern on surfaces of the first lead frame and the second lead frame corresponding to the gap. The light emitting device of claim 1, wherein a plurality of first ends of the first lead frame are disposed under the third side of the first cavity and spaced apart from the third side of the body. The light emitting device of claim 1, wherein a plurality of first ends of the first lead frame are disposed under the third side of the first cavity and spaced apart from the third side of the body. The light emitting device of claim 1, wherein the first width in the first direction is more than twice as wide as the second width in the second direction among the bottom regions of the second cavity. The light emitting device of claim 1, wherein the lower surface of the second cavity and the fourth cavity of the first lead frame is exposed to the lower surface of the body. The light emitting device of claim 7, wherein the lower surface of the fourth cavity is exposed to the lower surface of the body.

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