KR101831410B1 - Light emitting device package and light emitting apparatus having the same - Google Patents

Light emitting device package and light emitting apparatus having the same Download PDF

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Publication number
KR101831410B1
KR101831410B1 KR1020110080280A KR20110080280A KR101831410B1 KR 101831410 B1 KR101831410 B1 KR 101831410B1 KR 1020110080280 A KR1020110080280 A KR 1020110080280A KR 20110080280 A KR20110080280 A KR 20110080280A KR 101831410 B1 KR101831410 B1 KR 101831410B1
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KR
South Korea
Prior art keywords
light emitting
frame
lead frame
cavity
emitting device
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Application number
KR1020110080280A
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Korean (ko)
Other versions
KR20130017700A (en
Inventor
김현민
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110080280A priority Critical patent/KR101831410B1/en
Publication of KR20130017700A publication Critical patent/KR20130017700A/en
Application granted granted Critical
Publication of KR101831410B1 publication Critical patent/KR101831410B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting device package according to an embodiment includes: a body having a cavity; A first lead frame and a second lead frame in a cavity of the body; A heat dissipation frame between the first lead frame and the second lead frame in the cavity; A second electrode part disposed in the cavity and connected to the second lead frame, wherein a distance between the second lead frame and the second lead frame is longer than a length of the heat radiating frame; At least one light emitting chip on the heat radiating frame; And a protrusion on the at least one of the second electrode portion and the first lead frame, the protrusion further protruding between the cavity of the body and the first side surface, the protrusion being more protruded than the gap between the cavity and the second side surface, The heat dissipation frame includes a heat dissipation part that penetrates a protrusion of the body and is bent to a first side surface of the body.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package,

The embodiment relates to a light emitting device package and a light emitting device having the same.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device package of a new structure.

Embodiments provide a light emitting device package capable of disposing a heat radiating frame on a protrusion having a gap between a cavity and a first side portion of the body larger than an interval between other second side portions.

Embodiments provide a light emitting device package having a circuit capable of protecting a plurality of light emitting chips by a protection element by disposing a common electrode in a cavity and a second lead frame connected to each other on opposite sides of the cavity, A light emitting device is provided.

Embodiments provide a light emitting device in which a heat dissipating portion of a first and a second heat dissipating frame is projected to a protruding portion of a body more than a first lead portion and a second lead portion and is inserted into a concave portion on a substrate.

A light emitting device package according to an embodiment includes: a body having a cavity; A first lead frame and a second lead frame in a cavity of the body; A heat dissipation frame between the first lead frame and the second lead frame in the cavity; A second electrode part disposed in the cavity and connected to the second lead frame, wherein a distance between the second lead frame and the second lead frame is longer than a length of the heat radiating frame; At least one light emitting chip on the heat radiating frame; And a protrusion on the at least one of the second electrode portion and the first lead frame, the protrusion further protruding between the cavity of the body and the first side surface, the protrusion being more protruded than the gap between the cavity and the second side surface, The heat dissipation frame includes a heat dissipation part that penetrates a protrusion of the body and is bent to a first side surface of the body.

A light emitting device according to an embodiment includes a substrate including a metal layer, a wiring layer, and an insulating layer between the metal layer and the wiring layer; A concave portion formed at a first depth from an upper surface of the substrate; A first pad and a second pad disposed on the substrate and disposed on both sides of the concave portion; And a light emitting device package partially inserted into the concave portion of the substrate and connected to the first pad and the second pad,

The light emitting device package includes: a body having a cavity; A first lead frame and a second lead frame in a cavity of the body; A heat dissipation frame between the first lead frame and the second lead frame in the cavity; A second electrode part disposed in the cavity and connected to the second lead frame, wherein a distance between the second lead frame and the second lead frame is longer than a length of the heat radiating frame; At least one light emitting chip on the heat radiating frame; And a protection element on at least one of the second electrode portion and the first lead frame and protruding more than an interval between the cavity and the second side portion between the cavity and the first side portion of the body, The heat radiating frame includes a heat dissipating portion that penetrates the protrusion of the body and is bent to the first side surface of the body.

The embodiment can improve the heat radiation efficiency of the light emitting device package.

The embodiment can eliminate the thermal bottleneck of the side view type light emitting device package and improve the heat radiation efficiency.

The embodiment may further include a protection element in the light emitting device package having a plurality of light emitting chips to improve the electrical reliability of the light emitting device package.

The embodiment can improve the reliability of the light emitting device package and the light emitting device having the same.

1 is a perspective view illustrating a light emitting device package according to an embodiment.
2 is a front view showing the light emitting device package of FIG.
FIG. 3 is a view seen from the first side of the light emitting device package of FIG. 2. FIG.
4 is a plan view of the light emitting device package of FIG.
FIG. 5 is a view seen from a third side of the light emitting device package of FIG. 2. FIG.
6 is a plan view of the light emitting device package of FIG.
7 is a cross-sectional view of the light emitting device package of Fig. 2 on the AA side.
8 is a cross-sectional side view of the light emitting device package of Fig. 2 on the BB side.
9 is a cross-sectional side view of the light emitting device package of Fig. 2 on the CC side.
10 is a DD side sectional view of the light emitting device package of Fig.
11 is a view showing another example of the first and second heat radiation frames of Fig.
12 is an exploded state view of a light emitting module having the light emitting device package of FIG.
Fig. 13 is a combined state view of a light emitting module having a light emitting device package of Fig. 2;
14 is a view showing an example of a light emitting chip according to the embodiment.
15 is a view illustrating a display device having a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

2 is a front view of the light emitting device package of FIG. 1, FIG. 3 is a first side view of the light emitting device package of FIG. 2, and FIG. 4 is a cross- FIG. 5 is a view of a third side surface of the light emitting device package of FIG. 2, FIG. 6 is a view of a fourth side surface of the light emitting device package of FIG. 2, 2 is a cross-sectional side view of the light emitting device package of FIG. 2, and FIG. 8 is a cross-sectional view of the light emitting device package of FIG. Side sectional view of the package.

1 to 10, the light emitting device package 100 may be embodied as a side emitting type package, and may be variously applied as a light emitting device such as a light source and an illumination field of a liquid crystal display device such as a mobile phone and a portable computer have. Hereinafter, the side-emission type package will be described for convenience of explanation.

The light emitting device package 100 includes a body 11 having a cavity 15, first and second lead frames 31 and 41 in the cavity 15, first and second lead frames 31 and 41 The light emitting chip 101 on the first heat dissipating frame 21 and the second light emitting chip 102 on the second heat dissipating frame 25 are disposed between the first heat dissipating frame 21 and the second heat dissipating frame 21, A first electrode frame 51 between the first and second heat radiating frames 21 and 23 and a second electrode frame 51 connected to the second lead frame 41. The protection element 103 is formed on a part of the first lead frame 41, A first heat radiating portion 23 bent from the first heat radiating frame 21 and disposed on a first side portion S1 of the body 11; And a second heat dissipation part (27) bent on the first side part (S1) of the body (11).

The body 11 may be a printed circuit board (PCB), silicon, silicon carbide (SiC), aluminum nitride (AlN), polyphthalamide (PPA) Crystalline polymer, and the like, and the material is not limited thereto.

In addition, the body 11 may be made of a material such as polyphthalamide (PPA) by injection molding, an etching method, or a printed circuit board. However, the present invention is not limited thereto.

The body 11 includes a front surface S0, at least four side surfaces S1 to S4, and a rear surface opposite to the front surface S0. The at least four side portions S1 to S4 may include a first side portion S1 on which the light emitting device 100 is mounted, a second side portion S2 opposite to the first side portion S1, And a third side surface portion S3 and a fourth side surface portion S4 adjacent to the first and second side surfaces S1 and S2.

1, 2, 5, and 6, the body 11 includes a reflective portion 12 and a support portion 13, and the reflective portion 12 includes a cavity 15 having an open upper portion And the support portion 13 is formed integrally with the reflection portion 12 under the reflection portion 12. [

The cavity 15 is formed in the front portion S0 of the body 11 and the cavity 15 may have a predetermined depth and a predetermined shape. The area of the cavity 15 may be a light output surface area. The periphery of the cavity 15 may be inclined or perpendicular to the bottom of the cavity 15 as shown in FIGS. 7 and 8, but is not limited thereto.

The first side portion S1 of the body 11 is a region to be mounted on the substrate and the second side portion S2 is a region opposite to the first side portion S1. The third side surface portion S3 and the fourth side surface portion S4 are disposed on the opposite sides. The cavity 15 is formed such that the length of the area disposed between the third side surface portion S3 and the fourth side surface portion S4 is longer than the length of the area disposed between the second side surface portion S2 and the second side surface portion S1 And the present invention is not limited thereto.

A plurality of frames 21, 25, 31, 41, 45, and 51 are disposed at the bottom of the cavity 15 between the reflective portion 12 and the support portion 13 . The plurality of frames (21, 25, 31, 41, 45, 51) are metal frames, and may be formed as a single layer or multiple layers.

A first lead frame 31 and a second lead frame 41 are disposed on the bottom of the cavity 15 and a first heat dissipating frame 31 is interposed between the first lead frame 31 and the second lead frame 41. And a first electrode frame 51 is disposed between the first heat dissipation frame 21 and the second heat dissipation frame 25. The first heat dissipation frame 21 and the second heat dissipation frame 25 are disposed on the first heat dissipation frame 21 and the second heat dissipation frame 25, A second electrode part 45 connected to the second lead frame 41 and disposed adjacent to the first lead frame 31 and the first heat radiating frame 25 is formed at the bottom of the cavity 16 .

A first electrode frame 51 is disposed at the center of the bottom of the cavity 15, and the first electrode frame 51 is used as a common electrode. A non-polar first heat-radiating frame 21 and a second heat-radiating frame 25 are disposed on both sides of the first electrode frame 51.

The first lead frame 31 is disposed on one side of the cavity 15 so as to be spaced apart from the first radiating frame 21 and the second lead frame 41 is disposed on the other side of the cavity 15, And is disposed so as to be spaced apart from the two heat-radiating frames 25. The spacing between the first and second lead frames 31 and 41 is spaced apart from the bottom of the cavity 15 by a distance greater than a distance between the first and second heat radiating frames 21 and 25.

The first and second lead frames 31 and 41 and the first and second heat dissipating frames 21 and 25 and the first electrode frame 51 are made of a metal material such as titanium (Ti), copper (Cu ), At least one of nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn) , A single metal layer, or a multilayer metal layer. The first and second lead frames 31 and 41, the first and second heat radiating frames 21 and 25, and the first electrode frame 51 may have the same thickness, but the present invention is not limited thereto.

The first lead frame 31 includes a first lead portion 33 as shown in FIGS. 3 and 6 and the first lead portion 33 extends from the first lead frame 31 to the body 11, And is disposed in parallel with the first side portion S1 of the body 11. The first side portion S1 of the body 11 is bent into the first side portion S11 of the body 11, The first lead portion 33 is disposed on one side of the support portion 13 of the body 11.

The second lead frame 41 includes a second lead portion 43 as shown in FIGS. 3 and 5 and the second lead portion 43 extends from the second lead frame 41 to the body 11, And is disposed in parallel with the first side portion S1 of the body 11. The first side portion S1 of the body 11 is bent into the second region S12 of the body 11 through the through- The second lead portion 43 is disposed on one side of the support portion 13 of the body 11.

The second lead frame 41 is connected to the second electrode part 45. The second electrode part 45 is disposed closer to the first lead frame 31 than to the first lead frame 41 at the bottom of the cavity 15. The gap between the second lead frame 41 and the second electrode part 45 is spaced apart from the bottom of the cavity 15 by a distance greater than the distance between the first and second heat radiating frames 21 and 25 do. The gap between the second lead frame 41 and the second electrode part 45 is spaced at a longer interval than the length of any one of the first and second heat radiating frames 21 and 25.

4, 9 and 10, a connection portion 42 is formed between the second electrode frame 41 and the second electrode portion 45, and the connection portion 42 is formed between the second electrode frame 41 41 extending from the bottom of the cavity 15 in the direction of the second side portion S2 and extended to the outside of the second electrode portion 45 and connected to the second electrode portion 45. [ The second lead frame 41 may be formed integrally with the connection portion 42 and the second electrode portion 45, but the present invention is not limited thereto. A concave portion 42A is formed in a part of the connection portion 42. The concave portion 42A is formed such that a portion 53 of the first electrode frame 51 is bent in the direction of the second side portion S2, So that it can be prevented from coming into contact with the second connection portion 42.

The projecting portion 16 of the body 11 is connected to the first lead portion 33 of the first lead frame 31 and the second lead frame 41 of the first lead frame 31 as shown in FIGS. 5, 6, 7, And is further protruded from the other regions S11 and S12 in the direction of the first side portion S1 of the body 11. [

The protrusion 16 of the body 11 is spaced apart from the cavity 15 by a distance D1 between the cavity 15 and the first side portion S1 of the body 11 , And the interval D1 may be 0.6 to 0.7 mm. The gap D1 may be formed to be wider than the gap D2 between the cavity 15 and the second side surface S2 of the body 11 and may be formed to be wider than the gap D2 by at least 0.2 mm, have.

The width D4 of the center region of the body 11 is smaller than the width D4 of the first side portion S1 or the first heat radiation portion 23 of the body 11, Is formed to be wider than the width (D5) of the side area of the body (11) by the protrusion (16). The center region of the body 11 is a region in which the protruding portion 16 and the first and second heat radiating frames 21 and 25 are disposed and the side region is a region in which the first lead frame 31 and the second lead frame 41 are disposed in a region between the first side portion S2 of the body 11 and the first region S11 and the second region S12. The width D5 of the side area of the body 11 is set to be smaller than the width D5 of the area S11 or S12 of the first side part S1 of the body 11 or between the lead parts 33 and 43 and the second side part S2 It is a street.

The first heat dissipation frame 21 includes a first heat dissipation unit 23 and the second heat dissipation frame 25 includes a second heat dissipation unit 27. The first heat dissipating frame 21 and the second heat dissipating frame 25 extend through the protrusion 16 of the body 11 at the bottom of the cavity 15, And is bent from the heat radiating frame 21 to the first side portion S1 of the body 11 as shown in FIG. 8 and is disposed in parallel with the first side portion S1. 3 and 6, the second heat-radiating portion 27 is bent from the heat-radiating frame 21 to the first side portion S1 of the body 11, and is parallel to the first side portion S1 .

3, the first heat radiating part 23 and the second heat radiating part 24 are spaced apart from each other at the first side part S1 of the body 11, The bottleneck can be eliminated. The first heat radiating part 23 and the second heat radiating part 27 are disposed on different planes from the first lead part 33 and the second lead part 43.

3, 4 and 8, the thickness T2 of the reflective portion 12 of the body 11 may be thinner than the thickness T3 of the support portion 13, and the thickness of the first heat- 23 and the second heat dissipating portion 27 may be formed to have a width T3 or more of the thickness of the support portion 13. [ The areas of the first heat-radiating part 23 and the second heat-radiating part 23 may be the same as each other, but the present invention is not limited thereto.

The first and second heat dissipating frames 21 are formed by a portion extending into the protruding portion 16 of the body 11 and a portion of each of the light emitting chips 23 by the first heat dissipating portion 23 and the second heat dissipating portion 24. [ 101 and 102 can be effectively dissipated.

As shown in Figs. 3 and 8, at least one hole 18 is formed in the first and second heat dissipating frames 21, and a part of the body 11 is disposed in the hole 18. [ Accordingly, the adhesive force between the first and second heat dissipating frames 21 and the body 11 can be improved. The holes 18 may be formed in the bent portions of the first and second heat dissipating frames 21 or the boundary regions of the cavity and the body, but the present invention is not limited thereto.

The first electrode frame 51 is disposed between the first heat dissipation frame 21 and the second heat dissipation frame 25 and electrically connects the first electrode frame 51 and the second heat dissipation frame 25. A portion 53 of the first electrode frame 51 is protruded in the direction of the second side portion S2 of the body 11 to support the first electrode frame 51. [

The first light emitting chip 101 is disposed on the first heat dissipating frame 21 and the second light emitting chip 102 is disposed on the second heat dissipating frame 25. The first light emitting chip 101 is connected to the first lead frame 31 and the first electrode frame 51 by wires 105 and the second light emitting chip 103 is connected to the first electrode frame 51 and the second lead frame 41 by a wire 105. The first and second light emitting chips 101 and 102 are connected in series by the first electrode frame 51 and are driven by a power source supplied from the first lead frame 31 and the second lead frame 41. [ And the heat dissipation frames 21 and 25 can effectively dissipate heat.

The first and second light emitting chips 101 and 102 can selectively emit light in the range of the visible light band to the ultraviolet light band and can emit the same peak wavelength or different peak wavelengths. The first and second light emitting chips 101 and 102 may include at least one of a red LED chip, a blue LED chip, a green LED chip, and a yellow green LED chip, for example. The light emitting chips (101, 102) include compound semiconductor light emitting devices of group II to VI elements.

The protection element 103 may be mounted on either the second electrode part 45 or the first lead frame 31 and may be mounted on the second electrode part 41, for example. The protection element 103 is mounted on the first lead frame 31 and is connected to the second electrode part 45 by wires so as to be electrically connected to the light emitting chips 101 and 102 in parallel. The protection element 103 may be implemented with a thyristor, a zener diode, or a TVS (Transient Voltage Suppression), and the zener diode protects the light emitting chip from ESD.

7 and 8, a molding member 61 is disposed in the cavity 15 of the body 11, and the molding member 61 includes a light-transmitting resin layer such as silicon or epoxy, As shown in FIG. The phosphor may include a phosphor for changing the wavelength of light emitted from the molding member 61 or the light emitting chips 101 and 102. The phosphor may excite a part of the light emitted from the light emitting chips 101 and 102, And is emitted as light. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 61 may be formed in a flat shape, a concave shape, a convex shape, or the like, but is not limited thereto.

Here, the recessed portion 91 formed by the injection port for injecting the liquid body material during the injection molding may be further disposed on the rear portion S5 of the body 11, but the present invention is not limited thereto.

A lens may be further formed on the body 11, and the lens may include a concave or convex lens structure. The light distribution of the light emitted from the light emitting device package 100 may be Can be adjusted.

11 is another example of the heat radiation frame of Fig.

Referring to FIG. 11, the first heat radiation frame 21 of the light emitting device package includes a cup structure 15A concaved in a direction deeper than the bottom of the cavity 15. The second heat dissipation frame 25 includes a cup structure 25 recessed in a direction deeper than the bottom of the cavity 15. The cup structures 15 and 15B of the first and second heat dissipation frames 21 and 25 can increase the heat dissipation area and the light emitting chips 101 and 102 can be disposed therein. The lower portions of the cup structures 21A and 15B of the first and second heat dissipating frames 21A and 25A may be exposed or spaced apart from the rear portion S5 of the body 11. [ The back surface S5 of the body 11 is the opposite side of the cavity 15, that is, the opposite side of the front surface of the body 11.

12 and 13 are views showing an example of a light emitting module mounted on a substrate of the light emitting device package according to the embodiment.

Referring to FIG. 12, the light emitting module 300 includes a substrate 200 and at least one light emitting device package 100 mounted on the substrate 200. The substrate 200 includes a metal layer 211, an insulating layer 213 on the metal layer 211, a wiring layer 215 on the insulating layer 213, and a protective layer 217 on the wiring layer 215 . The metal layer 211 may include at least one of iron (Fe), an alloy having iron, aluminum, and an alloy having aluminum. The insulating layer 213 may be a resin type such as epoxy or silicon, And the wiring layer 215 may include at least one of Cu and Au as an electrode pad. The wiring layer 215 includes a first pad 215A and a second pad 215B. The first pad 215A and the second pad 215B are spaced apart from each other.

The protective layer 217 may include an insulating material such as a solder resist, and includes a material having a light reflectance of 50% or more. The thickness of the metal layer 211 may be 50% or more of the thickness of the substrate 200, and may be about 0.3 to 0.8 mm, for example, 0.4 to 0.6 mm. .

The metal layer 211 of the substrate 200 may be in surface contact with the bottom cover or the heat radiation plate to improve the heat radiation efficiency of the substrate 200. The substrate 200 includes a PCB (e.g., MCPCB) of a metal substrate.

The substrate 200 includes a recess 201 and the metal layer 211 is exposed on the bottom of the recess 201. The concave portion 201 of the substrate 200 is formed to have a depth H1 at which the protrusion 16 of the light emitting device package 100 is inserted and may have a depth of 0.6 to 0.7 mm, for example. The width of the concave portion 201 may be as wide as the protrusion 16 of the light emitting device package 200 is inserted.

13, the protrusion 16 of the light emitting device package 100 is inserted corresponding to the concave portion 201 of the substrate 200, and the first side surface S1 of the light emitting device package 100 The first heat dissipating unit 23 and the second heat dissipating unit 27 disposed on the substrate 200 are adhered to the metal layer 211 disposed on the bottom of the concave portion 201 of the substrate 200 with the adhesive member 81. The adhesive member 81 may be a conductive material, a non-conductive material, or a resin material having a high thermal conductivity.

The adhesive member 81 may be made of a resin material, or metal particles or a ceramic material may be added to the resin material. The metal particles may include silver, and the ceramic series may include at least one of low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), alumina Quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, cordierite, zirconia, beryllium, beryllia, and aluminum nitride. The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be, for example, SiO 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , BN, Si 3 N 4 , SiC (SiC- CeO 2, AlN, and the like. The thermally conductive material may comprise a component of C (diamond, CNT).

2) of the first lead frame 31 is connected to the first pad 215A of the substrate 200 by a conductive material 82 and the second lead frame 41 The second lead portion 43 of FIG. 2 is connected to the second pad 215B of the substrate 200 by a conductive material 83. The conductive material 82, 83 includes a conductive bonding material such as a solder paste.

The light emitting module transmits heat generated from the light emitting chips 101 and 102 of the light emitting device package 100 to the metal layer 211 of the substrate 200 through the heat radiating frame 21, 100 is also radiated through the second heat-radiating portion 24 of the heat-radiating frame 21 itself.

A plurality of recesses 201 may be disposed on the substrate 200 so that the light emitting device package 100 may be arrayed in each of the recesses 201. [

14 is a view showing a light emitting chip of the light emitting device package of FIG.

14, the light emitting chip 101 includes a growth substrate 111, a buffer layer 113, a low conductivity layer 115, a first conductivity type semiconductor layer 117, an active layer 119, a second cladding layer 121, and a second conductive semiconductor layer 123.

The growth substrate 111 may be made of a light-transmitting, insulating or conductive substrate. For example, the growth substrate 111 may be a sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3 , And LiGaO 3 may be used. A plurality of protrusions 112 may be formed on the upper surface of the growth substrate 111. The plurality of protrusions 112 may be formed through etching of the growth substrate 111, And may be formed as an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the growth substrate 111 may be in the range of 30 탆 to 150 탆, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111. The growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition ), A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), and the like.

A buffer layer 113 may be formed on the growth substrate 111 and the buffer layer 113 may be formed of at least one layer using Group II to VI compound semiconductors. The buffer layer 113 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0? X? 1, 0? Y ? 1, + y? 1), and includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer 113 may be formed in a superlattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to mitigate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in a range of 30 to 500 nm, but is not limited thereto.

A low conductivity layer 115 is formed on the buffer layer 113 and the low conductivity layer 115 is an undoped semiconductor layer and has lower electrical conductivity than the first conductivity type semiconductor layer 117. The low conduction layer 115 may be formed of a GaN-based semiconductor using a Group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type property without intentionally doping the conduction type dopant. The undoped semiconductor layer may not be formed, but the present invention is not limited thereto. The low conductivity layer 115 may be formed between the plurality of first conductivity type semiconductor layers 117.

The first conductivity type semiconductor layer 117 may be formed on the low conductivity layer 115. The first conductivity type semiconductor layer 117 is formed of a Group III-V compound semiconductor doped with the first conductivity type dopant, for example, In x Al y Ga 1 -x- y N (0? X? 1, 0? X + y? 1). When the first conductivity type semiconductor layer 117 is an n-type semiconductor layer, the first conductivity type dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

At least one of the low conductivity layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which a first layer and a second layer are alternately arranged, And the thickness of the second layer may be formed to a number A or more.

A first clad layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first clad layer may be formed of a GaN-based semiconductor. The first cladding layer serves to constrain the carrier. As another example, the first clad layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include n-type and / or p-type dopants, and may be formed of, for example, a first conductive type or a low conductive semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi-well, a multiple quantum well (MQW), a quantum wire, and a quantum dot structure. The active layer 119 may be a well layer and a barrier layer alternately arranged, and the well layer may be a well layer having a continuous energy level. Also, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer may be formed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer, for example, In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? y ≤ 1). The pair of the well layer and the barrier layer includes at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, and InGaN / InGaN.

The active layer 119 can selectively emit light within a wavelength range from the ultraviolet band to the visible light band, and can emit a peak wavelength ranging from 420 nm to 450 nm, for example.

A second cladding layer 121 is formed on the active layer 119. The second cladding layer 121 has a higher bandgap than a band gap of the barrier layer of the active layer 119, For example, a GaN-based semiconductor. For example, the second cladding layer 121 may include a GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second cladding layer 121 may include an n-type or p-type dopant, for example, a second conductive type or a low conductivity type semiconductor layer.

A second conductive type semiconductor layer 123 is formed on the second clad layer 121 and a second conductive type dopant is formed on the second conductive type semiconductor layer 123. The second conductive semiconductor layer 123 may be formed of at least one of Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, the first conductive semiconductor layer 117 may be a p-type semiconductor layer, Lt; / RTI > Also, an n-type semiconductor layer may be further formed on the second conductive semiconductor layer 123, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type. The light emitting chip 101 may be defined as a light emitting structure 150 of the first conductivity type semiconductor layer 117, the active layer 119 and the second conductivity type semiconductor layer 123. The light emitting structure 150 ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150 and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 may be formed of a material having permeability and electrical conductivity as a current diffusion layer. The electrode layer 141 may have a refractive index lower than the refractive index of the compound semiconductor layer.

The electrode layer 141 is formed on the upper surface of the second conductive semiconductor layer 123. The material of the electrode layer 141 may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO) zinc oxide, indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, And may be formed of at least one layer. The electrode layer 141 may be formed of a reflective electrode layer, for example, Al, Ag, Pd, Rh, Pt, Ir, or an alloy of two or more thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further have a current diffusion pattern of an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode (143) is formed on a part of the first conductive type semiconductor layer (117). The first electrode 143 and the second electrode 145 may be formed of a metal such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Can be selected from among the optional alloys.

An insulating layer may further be formed on the surface of the light emitting device 101. The insulating layer may prevent a short between layers of the light emitting structure 150 and prevent moisture penetration.

The light emitting module or substrate according to the above-described embodiment (s) can be applied to a light unit or an illumination system. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arrayed. The light unit may include the display device shown in FIG. 15, another illumination lamp, a signal lamp, a vehicle headlight, an electric signboard, and the like.

15 is an exploded perspective view of a display device according to an embodiment.

15, a display device 1000 includes a light guide plate 1041, a light emitting module 300 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 300 and the reflection member 1022 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light from the light emitting module 300 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 300 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

At least one light emitting module 300 may be disposed within the bottom cover 1011 and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 300 includes a substrate 200 and a light emitting device package 100 according to the embodiment described above and the light emitting device package 200 may be arrayed on the substrate 200 at a predetermined interval have. When the light emitting device package 100 is mounted on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 200 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Accordingly, heat generated in the light emitting device package 100 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 100 may be mounted on the substrate 200 such that the light emitting surface of the plurality of light emitting device packages 100 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device 30 may directly or indirectly provide light to the light incident portion, which is one side of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may receive the light guide plate 1041, the light emitting module 300, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks the light provided from the light emitting module 300 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 300 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package 11: body
12: Support part 13: Reflective part
15: cavity 21: heat radiation frame
23,27; Heat dissipating part 31, 41: Lead frame
33, 43: lead portion 43:
45: second electrode part 51: first electrode frame
101, 102: light emitting chip 16:
200: substrate 201: concave
211: metal layer 213: insulating layer
215: wiring layer 217: protective layer
300: Light emitting module

Claims (16)

A body having a cavity;
A first lead frame and a second lead frame in a cavity of the body;
A heat dissipation frame between the first lead frame and the second lead frame in the cavity;
A second electrode part disposed in the cavity and connected to the second lead frame, wherein a distance between the second lead frame and the second lead frame is longer than a length of the heat radiating frame;
At least one light emitting chip on the heat radiating frame; And
A protective element on at least one of the second electrode portion and the first lead frame,
And a protrusion protruding between the cavity of the body and the first side portion more than an interval between the cavity and the second side portion,
Wherein the heat dissipation frame includes a heat dissipation portion that penetrates the protrusion of the body and is bent to the first side portion of the body. The light emitting device package according to claim 1, wherein a distance between the cavity and the first side portion is in the range of 0.6 to 0.7 mm. The light emitting device of claim 1, wherein the heat radiating frame includes first and second heat radiating frames spaced apart from each other, the light emitting chip includes a first light emitting chip disposed on the first heat radiating frame, 2 light emitting chip. The light emitting device package of claim 3, further comprising a first electrode frame between the first and second heat dissipating frames, wherein the first electrode frame is connected to the first light emitting chip and the second light emitting chip in common. The light emitting device package of claim 4, wherein the first electrode frame is separated from the first and second heat dissipation frames, and a part of the first electrode frame is bent onto the second side surface of the body. 6. The battery pack according to any one of claims 1 to 5, further comprising: a first lead portion bent from the first lead frame to a first region of a first side portion of the body; And a second lead portion bent from the second lead frame to a second region of the first side portion of the body. The light emitting device package according to any one of claims 1 to 5, further comprising a connection portion connecting the second lead frame and the second electrode portion and bent on a second side surface of the body. The light emitting device package according to claim 6, wherein the heat radiating portion is disposed on a plane different from the first lead portion and the second lead portion. The light emitting device package according to claim 4, wherein the protection element is disposed on the first lead frame and electrically connected to the second electrode portion by a wire. The light emitting device package according to any one of claims 1 to 5, wherein the heat radiating frame includes a cup structure having a depth deeper than the cavity bottom in the cavity. 11. The light emitting device package according to claim 10, wherein the heat radiating frame is exposed on a surface opposite to a surface of the cavity of the body. The light emitting device package according to claim 1, further comprising at least one hole formed in the heat radiating frame disposed in the body, wherein a part of the body is disposed in the at least one hole. A substrate including a metal layer, a wiring layer, and an insulating layer between the metal layer and the wiring layer;
A concave portion formed at a first depth from an upper surface of the substrate;
A first pad and a second pad disposed on the substrate and disposed on both sides of the concave portion; And
And a light emitting device package partially inserted into the concave portion of the substrate and connected to the first pad and the second pad,
Wherein the light emitting device package includes:
A body having a cavity;
A first lead frame and a second lead frame in a cavity of the body;
A heat dissipation frame between the first lead frame and the second lead frame in the cavity; And
A second electrode part disposed in the cavity and connected to the second lead frame, wherein a distance between the second lead frame and the second lead frame is longer than a length of the heat radiating frame;
At least one light emitting chip on the heat radiating frame; And
A protective element on at least one of the second electrode portion and the first lead frame,
And a protrusion inserted into the concave portion of the substrate, the protrusion being more protruded between the cavity of the body and the first side portion than the gap between the cavity and the second side portion,
Wherein the heat dissipating frame includes a heat dissipating unit that penetrates a protrusion of the body and is bent to a first side of the body. 14. The method of claim 13,
Wherein a metal layer of the substrate is disposed in a recessed portion of the substrate and corresponds to a heat dissipation portion of the heat dissipation frame of the light emitting device package. 15. The method of claim 14,
A first lead portion bent from the first lead frame to a first region of a first side portion of the body and corresponding to a first pad of the substrate; And a second lead portion bent from the second lead frame to a second region of a first side portion of the body and corresponding to a second pad of the substrate. 14. The method of claim 13,
Wherein the light emitting device package is mounted on a plurality of recesses arranged on the substrate, respectively.
KR1020110080280A 2011-08-11 2011-08-11 Light emitting device package and light emitting apparatus having the same KR101831410B1 (en)

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KR102044838B1 (en) * 2015-01-21 2019-11-14 한국과학기술연구원 Light Emitting Devices with boron nitride heat-sink pattern layer and manufacturing method thereof
CN106067506B (en) 2015-04-22 2018-06-29 株式会社流明斯 The manufacturing method of light emitting device package, back light unit and light-emitting device
KR102426118B1 (en) * 2017-10-13 2022-07-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit
KR102555238B1 (en) * 2018-09-13 2023-07-14 주식회사 루멘스 Quantum dot LED package and Quantum dot LED module comprising the same
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