TW200741159A - Heat processing apparatus and heat processing method - Google Patents

Heat processing apparatus and heat processing method

Info

Publication number
TW200741159A
TW200741159A TW095147445A TW95147445A TW200741159A TW 200741159 A TW200741159 A TW 200741159A TW 095147445 A TW095147445 A TW 095147445A TW 95147445 A TW95147445 A TW 95147445A TW 200741159 A TW200741159 A TW 200741159A
Authority
TW
Taiwan
Prior art keywords
exhaust gas
heat processing
heat
heating plate
substrate
Prior art date
Application number
TW095147445A
Other languages
English (en)
Other versions
TWI320088B (en
Inventor
Shigeki Aoki
Yuichi Sakai
Mitsuo Yamashita
Hiroshi Shinya
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741159A publication Critical patent/TW200741159A/zh
Application granted granted Critical
Publication of TWI320088B publication Critical patent/TWI320088B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/18—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact
    • F26B3/20—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact the heat source being a heated surface, e.g. a moving belt or conveyor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
    • F26B9/10—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in the open air; in pans or tables in rooms; Drying stacks of loose material on floors which may be covered, e.g. by a roof
    • F26B9/103—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in the open air; in pans or tables in rooms; Drying stacks of loose material on floors which may be covered, e.g. by a roof using fixed or removable drying air channels placed in the stack, e.g. horizontally or vertically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/001—Drying-air generating units, e.g. movable, independent of drying enclosure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
TW095147445A 2006-01-25 2006-12-18 Heat processing apparatus and heat processing method TWI320088B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006015926A JP4527670B2 (ja) 2006-01-25 2006-01-25 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体

Publications (2)

Publication Number Publication Date
TW200741159A true TW200741159A (en) 2007-11-01
TWI320088B TWI320088B (en) 2010-02-01

Family

ID=38284154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147445A TWI320088B (en) 2006-01-25 2006-12-18 Heat processing apparatus and heat processing method

Country Status (5)

Country Link
US (2) US7980003B2 (zh)
JP (1) JP4527670B2 (zh)
KR (1) KR101176238B1 (zh)
CN (1) CN100565789C (zh)
TW (1) TWI320088B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10788763B2 (en) 2012-07-06 2020-09-29 Asml Netherlands B.V. Lithographic apparatus

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
JP4527670B2 (ja) 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
US20080008837A1 (en) * 2006-07-10 2008-01-10 Yasuhiro Shiba Substrate processing apparatus and substrate processing method for heat-treating substrate
JP4833005B2 (ja) * 2006-09-11 2011-12-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2010044310A1 (ja) * 2008-10-16 2010-04-22 シャープ株式会社 乾燥方法および乾燥装置
JP5490741B2 (ja) * 2011-03-02 2014-05-14 東京エレクトロン株式会社 基板搬送装置の位置調整方法、及び基板処理装置
SG194439A1 (en) * 2011-05-25 2013-12-30 Murata Machinery Ltd Load port apparatus, carrier system, and container conveyance method
JP5575706B2 (ja) * 2011-06-17 2014-08-20 東京エレクトロン株式会社 疎水化処理装置、疎水化処理方法、プログラム及びコンピュータ記録媒体。
CN103094159B (zh) * 2011-10-31 2016-02-24 细美事有限公司 基板处理设备及基板处理方法
US8900364B2 (en) * 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
JP5914922B2 (ja) * 2012-10-18 2016-05-11 アユミ工業株式会社 半導体熱処理用ヒーター
US9245767B2 (en) * 2013-09-12 2016-01-26 Applied Materials, Inc. Anneal module for semiconductor wafers
JP6406192B2 (ja) * 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
US10217652B2 (en) * 2014-12-10 2019-02-26 Tokyo Electron Limited Heat treatment apparatus, heat treatment method, and storage medium
JP6430870B2 (ja) * 2015-03-20 2018-11-28 東京エレクトロン株式会社 クランプ装置及びこれを用いた基板搬入出装置、並びに基板処理装置
TWI544973B (zh) * 2015-03-20 2016-08-11 家登精密工業股份有限公司 半導體容器清洗機的運作方法
KR101670494B1 (ko) 2015-06-02 2016-10-31 (주)에스아이 화학기상증착장치
KR20170048787A (ko) * 2015-10-27 2017-05-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6659368B2 (ja) * 2016-01-15 2020-03-04 株式会社荏原製作所 洗浄装置、基板処理装置、および基板処理方法
CN205561438U (zh) * 2016-03-23 2016-09-07 常州捷佳创精密机械有限公司 一种槽式烘干结构
KR20180000928A (ko) * 2016-06-24 2018-01-04 세메스 주식회사 가열 처리 유닛, 이를 갖는 베이크 장치 및 이를 이용한 기판 처리 방법
KR101885101B1 (ko) * 2016-09-19 2018-08-07 세메스 주식회사 기판 처리 장치
KR102037915B1 (ko) * 2016-12-27 2019-10-30 세메스 주식회사 기판 처리 장치
KR101870651B1 (ko) * 2016-12-30 2018-06-26 세메스 주식회사 기판 처리 장치
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
JP6811638B2 (ja) * 2017-02-14 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及びその装置
CN107246770A (zh) * 2017-07-28 2017-10-13 嘉兴正联纺织有限公司 一种纺织布料用烘干机
JP2019047042A (ja) 2017-09-05 2019-03-22 東芝メモリ株式会社 半導体製造装置
CN111954923A (zh) * 2018-03-23 2020-11-17 东京毅力科创株式会社 加热处理装置和加热处理方法
JP7153485B2 (ja) * 2018-07-02 2022-10-14 株式会社Ｓｃｒｅｅｎホールディングス 基板熱処理装置及び基板熱処理方法
KR102139615B1 (ko) 2018-07-10 2020-08-12 세메스 주식회사 기판 처리 장치
KR102255278B1 (ko) * 2018-08-22 2021-05-25 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102204883B1 (ko) 2019-05-09 2021-01-19 세메스 주식회사 기판 처리 장치
WO2020243288A1 (en) * 2019-05-28 2020-12-03 Applied Materials, Inc. Thermal process chamber lid with backside pumping
KR102346529B1 (ko) 2019-06-24 2021-12-31 세메스 주식회사 액 공급 유닛, 그리고 이를 가지는 기판 처리 장치 및 방법
JP7359680B2 (ja) 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
CN112289701A (zh) * 2019-07-22 2021-01-29 东京毅力科创株式会社 热处理装置和热处理方法
KR102324408B1 (ko) * 2019-08-23 2021-11-11 세메스 주식회사 기판 처리 장치 및 방법
US11912608B2 (en) 2019-10-01 2024-02-27 Owens-Brockway Glass Container Inc. Glass manufacturing
US11390551B2 (en) 2019-10-01 2022-07-19 Owens-Brockway Glass Container Inc. Cooling panel for a melter
CN112687575A (zh) * 2019-10-17 2021-04-20 东京毅力科创株式会社 基片处理装置、基片处理方法和存储介质
KR102545752B1 (ko) * 2020-09-10 2023-06-20 세메스 주식회사 베이크 장치 및 기판 처리 장치
CN114812121A (zh) * 2022-04-15 2022-07-29 通威太阳能（安徽）有限公司 硅片烘干装置及烘干方法、制绒硅片后处理系统及方法

Family Cites Families (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491457A (en) * 1967-10-10 1970-01-27 Bechtel Int Corp Microwave drying method and apparatus
US4022580A (en) * 1973-05-07 1977-05-10 Phillips Petroleum Company Catalyst activation
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
US4143468A (en) * 1974-04-22 1979-03-13 Novotny Jerome L Inert atmosphere chamber
US3918168A (en) * 1974-10-04 1975-11-11 Olin Corp Method for drying adherent particulate matter such as a polyvinyl chloride resin
US4327665A (en) * 1979-07-26 1982-05-04 Clemens Arrasmith Method and apparatus for coating composition on can seams
US5090898A (en) * 1979-11-16 1992-02-25 Smith Thomas M Infra-red heating
US4455762A (en) * 1981-03-16 1984-06-26 Olin Corporation Glass batch pellet production and drying process and apparatus
US4458428A (en) * 1981-03-16 1984-07-10 Olin Corporation Glass batch pellet production and drying process and apparatus
US4416624A (en) * 1981-11-27 1983-11-22 Cts Corporation Vertical tunnel kiln
JPS58110034A (ja) * 1981-12-24 1983-06-30 Fujitsu Ltd 縦型気相エピタキシヤル装置
JPS58212126A (ja) * 1982-06-03 1983-12-09 Toshiba Corp 半導体製造装置
JPS59104117A (ja) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol 減圧堆積装置
JPS60167416A (ja) * 1984-02-10 1985-08-30 Hitachi Ltd 処理装置
US4754769A (en) * 1985-03-12 1988-07-05 Salon Pro, Inc. Nail dryer
JPH0736386B2 (ja) * 1985-06-14 1995-04-19 東芝機械株式会社 気相成長装置
US4640726A (en) * 1985-06-27 1987-02-03 Kimberly-Clark Corporation Heat activation process and apparatus for heat shrinkable material
JPH0783002B2 (ja) * 1986-09-09 1995-09-06 光洋リンドバ−グ株式会社 半導体熱処理装置
US4728531A (en) * 1986-11-04 1988-03-01 Ford Motor Company Method of drying refractory coated foam patterns
US4785552A (en) * 1987-07-08 1988-11-22 Best Willie H Convection stabilized radiant oven
US4957432A (en) * 1987-09-01 1990-09-18 Phillips Petroleum Company Forced jet convection oven for vacuum bagging
US5235995A (en) * 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US4922277A (en) * 1988-11-28 1990-05-01 The United States Of America As Represented By The Secretary Of The Air Force Silicon wafer photoresist developer
EP0379684B1 (de) * 1988-12-23 1993-10-27 Bühler Ag Verfahren und Vorrichtung zum kontinuierlichen Kristallisieren von Polyestermaterial
ES2054357T3 (es) * 1989-05-08 1994-08-01 Philips Nv Aparato y metodo para tratar substratos planos bajo una presion reducida.
DE3927627A1 (de) * 1989-08-22 1991-02-28 Hoechst Ag Verfahren und vorrichtung zum trocknen einer auf einem bewegten traegermaterial aufgebrachten fluessigkeitsschicht
US5099586A (en) * 1989-09-08 1992-03-31 W. R. Grace & Co.-Conn. Reflector assembly for heating a substrate
US5010659A (en) * 1989-09-08 1991-04-30 W. R. Grace & Co.-Conn. Infrared drying system
JPH03238819A (ja) * 1990-02-15 1991-10-24 Seiichiro Sogo 半導体材料の乾燥方法および装置
US5237756A (en) * 1990-08-28 1993-08-24 Materials Research Corporation Method and apparatus for reducing particulate contamination
US5205051A (en) * 1990-08-28 1993-04-27 Materials Research Corporation Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5105557A (en) * 1991-03-11 1992-04-21 Vadasz Jozsef T System for rapidly drying parts
US5174045A (en) * 1991-05-17 1992-12-29 Semitool, Inc. Semiconductor processor with extendible receiver for handling multiple discrete wafers without wafer carriers
US5210959A (en) * 1991-08-19 1993-05-18 Praxair Technology, Inc. Ambient-free processing system
US5307568A (en) * 1991-09-09 1994-05-03 Tokyo Electron Limited Gas supply system
US5216820A (en) * 1991-09-25 1993-06-08 M & R Printing Equipment, Inc. Curing unit and method of curing ink
US5228206A (en) * 1992-01-15 1993-07-20 Submicron Systems, Inc. Cluster tool dry cleaning system
JPH0613361A (ja) * 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
KR100304127B1 (ko) * 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
US5746008A (en) * 1992-07-29 1998-05-05 Shinko Electric Co., Ltd. Electronic substrate processing system using portable closed containers
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5489337A (en) * 1993-01-28 1996-02-06 Kabushiki Kaisha Toshiba Apparatus for applying organic material to semiconductor wafer in which the nozzle opening adjusts in response to data
KR100284556B1 (ko) * 1993-03-25 2001-04-02 다카시마 히로시 도포막 형성방법 및 그를 위한 장치
US5575079A (en) * 1993-10-29 1996-11-19 Tokyo Electron Limited Substrate drying apparatus and substrate drying method
US5451524A (en) * 1994-02-01 1995-09-19 The Gillette Company In vitro chamber for human organ tissue samples
US5727332A (en) * 1994-07-15 1998-03-17 Ontrak Systems, Inc. Contamination control in substrate processing system
US5551165A (en) * 1995-04-13 1996-09-03 Texas Instruments Incorporated Enhanced cleansing process for wafer handling implements
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5715612A (en) * 1995-08-17 1998-02-10 Schwenkler; Robert S. Method for precision drying surfaces
US5752532A (en) * 1995-08-17 1998-05-19 Schwenkler; Robert S. Method for the precision cleaning and drying surfaces
US5886326A (en) * 1996-01-19 1999-03-23 Thermotrex Corporation Microwave waste incinerator
KR980012044A (ko) * 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH09260364A (ja) * 1996-03-26 1997-10-03 Tokyo Electron Ltd 熱処理方法および熱処理装置
JPH1012517A (ja) * 1996-06-20 1998-01-16 Dainippon Screen Mfg Co Ltd 基板熱処理装置
JPH1012536A (ja) * 1996-06-27 1998-01-16 Dainippon Screen Mfg Co Ltd 基板熱処理装置
US5993916A (en) * 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5713138A (en) * 1996-08-23 1998-02-03 Research, Incorporated Coating dryer system
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
JP3511156B2 (ja) * 1996-11-18 2004-03-29 パロマ工業株式会社 ガス炊飯器
US5735194A (en) * 1997-01-03 1998-04-07 Cochran; David M. Apparatus for separating chaff and roasting coffee and cocoa beans
JP3346716B2 (ja) * 1997-02-14 2002-11-18 東京エレクトロン株式会社 基板冷却方法および基板冷却装置
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5908292A (en) * 1997-03-07 1999-06-01 Semitool, Inc. Semiconductor processing furnace outflow cooling system
US5899001A (en) * 1997-05-19 1999-05-04 Layton; Howard M. Laminar flow system for drying critical parts
JPH10321584A (ja) * 1997-05-22 1998-12-04 Mitsubishi Electric Corp 乾燥装置および乾燥方法
US6122837A (en) * 1997-06-25 2000-09-26 Verteq, Inc. Centrifugal wafer processor and method
TW442336B (en) * 1997-08-19 2001-06-23 Tokyo Electron Ltd Film forming method
JP3194036B2 (ja) * 1997-09-17 2001-07-30 東京エレクトロン株式会社 乾燥処理装置及び乾燥処理方法
US5962070A (en) * 1997-09-25 1999-10-05 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus
JPH11214317A (ja) * 1998-01-27 1999-08-06 Kokusai Electric Co Ltd 基板処理装置および基板処理方法
US6067728A (en) * 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6286524B1 (en) * 1998-02-27 2001-09-11 Kabushiki Kaisha Toshiba Wafer drying apparatus and method with residual particle removability enhancement
US5913981A (en) * 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
SG81975A1 (en) * 1998-04-14 2001-07-24 Kaijo Kk Method and apparatus for drying washed objects
KR100267885B1 (ko) * 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
JPH11340119A (ja) 1998-05-26 1999-12-10 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2963443B1 (ja) * 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR100431379B1 (ko) * 1998-07-01 2004-05-14 인스티튜트 오브 페이퍼 사이언스 앤드 테크놀러지 섬유질 웹의 탈수 방법 및 장치
US6085437A (en) * 1998-07-01 2000-07-11 The Procter & Gamble Company Water-removing apparatus for papermaking process
US6308436B1 (en) * 1998-07-01 2001-10-30 The Procter & Gamble Company Process for removing water from fibrous web using oscillatory flow-reversing air or gas
JP3764278B2 (ja) * 1998-07-13 2006-04-05 株式会社東芝 基板加熱装置、基板加熱方法及び基板処理方法
US6319322B1 (en) * 1998-07-13 2001-11-20 Tokyo Electron Limited Substrate processing apparatus
TW428216B (en) * 1998-07-29 2001-04-01 Tokyo Electron Ltd Substrate process method and substrate process apparatus
JP2000074227A (ja) * 1998-08-26 2000-03-14 Sony Corp 真空処理装置および磁気シール回転軸受けユニット
JP2000091185A (ja) * 1998-09-07 2000-03-31 Dainippon Screen Mfg Co Ltd 基板処理装置および方法
US6402844B1 (en) 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
JP2000181080A (ja) * 1998-12-21 2000-06-30 Fuji Photo Film Co Ltd 感光性樹脂層積層方法
AU5173100A (en) * 1999-05-27 2000-12-18 Lam Research Corporation Apparatus and methods for drying batches of wafers
JP3448613B2 (ja) * 1999-06-29 2003-09-22 オメガセミコン電子株式会社 乾燥装置
US6263590B1 (en) * 1999-07-12 2001-07-24 Advanced Micro Devices, Inc. Method and apparatus for controlling byproduct induced defect density
US6354832B1 (en) * 1999-07-28 2002-03-12 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
TW469491B (en) * 1999-11-18 2001-12-21 Tokyo Electron Ltd Silylation treatment unit and method
JP2001185471A (ja) * 1999-12-24 2001-07-06 Toshiba Corp 加熱処理装置及びパターン形成方法
JP4115641B2 (ja) * 1999-12-28 2008-07-09 東京エレクトロン株式会社 加熱処理装置
EP1170564B1 (en) * 2000-01-17 2004-07-07 Toho Kasei Co., Ltd. Method and device for drying substrate
SG105487A1 (en) * 2000-03-30 2004-08-27 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP3545672B2 (ja) * 2000-04-21 2004-07-21 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP3833439B2 (ja) * 2000-05-02 2006-10-11 株式会社ノリタケカンパニーリミテド 大型基板用多段加熱炉、及び両面加熱式遠赤外線パネルヒーター、並びに該加熱炉内の給排気方法
DE60106675T2 (de) * 2000-05-31 2005-12-01 Shipley Co., L.L.C., Marlborough Verdampfer
US6877247B1 (en) * 2000-08-25 2005-04-12 Demoore Howard W. Power saving automatic zoned dryer apparatus and method
JP3535457B2 (ja) * 2000-09-11 2004-06-07 東京エレクトロン株式会社 基板の熱処理装置
US6553689B2 (en) * 2000-09-24 2003-04-29 3M Innovative Properties Company Vapor collection method and apparatus
US20030230003A1 (en) * 2000-09-24 2003-12-18 3M Innovative Properties Company Vapor collection method and apparatus
US6370796B1 (en) * 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
US6830389B2 (en) * 2000-10-25 2004-12-14 Advanced Micro Devices, Inc. Parallel plate development with the application of a differential voltage
US6688784B1 (en) * 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6363624B1 (en) * 2000-11-21 2002-04-02 Applied Materials, Inc. Apparatus for cleaning a semiconductor process chamber
US6647642B2 (en) * 2000-12-15 2003-11-18 Tokyo Electron Limited Liquid processing apparatus and method
KR100899609B1 (ko) * 2000-12-28 2009-05-27 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
US6651357B2 (en) * 2001-01-12 2003-11-25 Megtec Systems, Inc. Web dryer with fully integrated regenerative heat source and control thereof
US6425191B1 (en) * 2001-04-18 2002-07-30 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing solvent residue in a solvent-type dryer for semiconductor wafers
JP3547724B2 (ja) * 2001-09-25 2004-07-28 沖電気工業株式会社 レジストパターンのベーク装置及びレジストパターンの形成方法
US6634805B1 (en) * 2001-10-10 2003-10-21 Advanced Micro Devices, Inc. Parallel plate development
JP3616366B2 (ja) * 2001-10-23 2005-02-02 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP3827205B2 (ja) * 2001-11-22 2006-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP2003174007A (ja) * 2001-12-04 2003-06-20 Supurauto:Kk 基板の真空乾燥方法
KR100456527B1 (ko) * 2001-12-11 2004-11-09 삼성전자주식회사 마란고니 효과를 증대시키기 위한 건조 장비 및 건조 방법
JP3913062B2 (ja) * 2002-01-09 2007-05-09 キヤノン株式会社 インクジェット記録装置およびインクジェット記録方法
US7107701B2 (en) * 2002-01-22 2006-09-19 Toho Kasei Co., Ltd. Substrate drying method and apparatus
JP3921234B2 (ja) * 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6796054B2 (en) * 2002-03-12 2004-09-28 Tokyo Electron Limited Low-pressure dryer and low-pressure drying method
US6749655B2 (en) * 2002-04-17 2004-06-15 Speedline Technologies, Inc. Filtration of flux contaminants
US20040123490A1 (en) * 2002-04-22 2004-07-01 The Procter & Gamble Company Fabric article treating method and device comprising a heating means
JP4043831B2 (ja) * 2002-04-24 2008-02-06 東京エレクトロン株式会社 熱処理装置
US6658764B2 (en) * 2002-05-10 2003-12-09 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for preventing droplets on wafers during solvent drying process
JP3913625B2 (ja) * 2002-07-12 2007-05-09 東京エレクトロン株式会社 減圧乾燥装置、塗布膜形成装置及び減圧乾燥方法
JP3687666B2 (ja) * 2002-11-18 2005-08-24 セイコーエプソン株式会社 乾燥装置及びこれを備えるワーク処理装置
JP3758636B2 (ja) * 2002-12-11 2006-03-22 ソニー株式会社 熱処理装置
JP2004235516A (ja) * 2003-01-31 2004-08-19 Trecenti Technologies Inc ウエハ収納治具のパージ方法、ロードポートおよび半導体装置の製造方法
WO2004078450A1 (ja) * 2003-03-04 2004-09-16 Mitsubishi Rayon Co., Ltd. シート状物の熱処理装置および熱処理方法
US7669530B2 (en) * 2003-05-16 2010-03-02 Printing Research, Inc. UV curing assembly having sheet transfer unit with heat sink vacuum plate
JP3718688B2 (ja) * 2003-06-17 2005-11-24 東京エレクトロン株式会社 加熱装置
JP2005019593A (ja) * 2003-06-25 2005-01-20 Matsushita Electric Ind Co Ltd 熱処理方法および装置
JP3592702B1 (ja) * 2003-08-12 2004-11-24 エス・イー・エス株式会社 基板処理方法及び基板処理装置
JP4467266B2 (ja) * 2003-08-13 2010-05-26 大日本スクリーン製造株式会社 基板加熱装置および基板加熱方法
JP4020260B2 (ja) * 2003-10-17 2007-12-12 東京エレクトロン株式会社 熱処理装置、および異物検出方法並びに異物除去方法
JP2005183638A (ja) * 2003-12-18 2005-07-07 Dainippon Screen Mfg Co Ltd 基板熱処理装置
JP4290579B2 (ja) * 2004-01-19 2009-07-08 大日本スクリーン製造株式会社 基板加熱装置および基板加熱方法
US6944970B2 (en) * 2004-01-21 2005-09-20 Silverbrook Research Pty Ltd In-line dryer for a printer
US6920704B1 (en) * 2004-01-21 2005-07-26 Silverbrook Research Pty Ltd Drying method for a printer
JP4074593B2 (ja) * 2004-02-26 2008-04-09 東京エレクトロン株式会社 減圧乾燥装置及び減圧乾燥方法
JP4270457B2 (ja) * 2004-03-10 2009-06-03 大日本スクリーン製造株式会社 有機物除去装置および膜厚測定装置
KR100830485B1 (ko) * 2004-04-02 2008-05-20 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
KR100574058B1 (ko) * 2004-08-20 2006-04-27 삼성전자주식회사 웨이퍼 베이크 장치
KR100645042B1 (ko) * 2004-09-07 2006-11-10 삼성전자주식회사 반도체 기판 세정 장치
JP3969419B2 (ja) * 2004-12-16 2007-09-05 セイコーエプソン株式会社 被加熱体の乾燥方法、加熱炉、及びデバイスの製造方法
US7651306B2 (en) * 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7699021B2 (en) * 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7798764B2 (en) * 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7255747B2 (en) * 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
JP4179276B2 (ja) * 2004-12-24 2008-11-12 セイコーエプソン株式会社 溶媒除去装置および溶媒除去方法
KR100601979B1 (ko) * 2004-12-30 2006-07-18 삼성전자주식회사 반도체 웨이퍼의 베이킹 장치
KR100589107B1 (ko) * 2005-01-19 2006-06-12 삼성전자주식회사 기판 상의 막을 베이크하는 방법 및 이를 수행하기 위한장치
JP4302646B2 (ja) * 2005-02-08 2009-07-29 東京エレクトロン株式会社 加熱処理装置
JP4475136B2 (ja) * 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7638780B2 (en) * 2005-06-28 2009-12-29 Eastman Kodak Company UV cure equipment with combined light path
JP4145905B2 (ja) * 2005-08-01 2008-09-03 セイコーエプソン株式会社 減圧乾燥装置
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
US7367138B2 (en) * 2005-10-11 2008-05-06 Nikon Corporation Devices and methods for thermophoretic and electrophoretic reduction of particulate contamination of lithographic reticles
US7526879B2 (en) * 2005-11-04 2009-05-05 Lg Electronics Inc. Drum washing machine and clothes dryer using peltier thermoelectric module
US7665227B2 (en) * 2005-12-30 2010-02-23 Whirlpool Corporation Fabric revitalizing method using low absorbency pads
US7644512B1 (en) * 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7745079B2 (en) * 2006-03-09 2010-06-29 Nikon Corporation Apparatus for and method of thermophoretic protection of an object in a high-vacuum environment
JP2007271137A (ja) * 2006-03-30 2007-10-18 Fujifilm Corp 塗布膜の乾燥方法及び装置並びに光学フィルムの製造方法
JP2008016764A (ja) * 2006-07-10 2008-01-24 Dainippon Screen Mfg Co Ltd 熱処理装置
JP4832201B2 (ja) * 2006-07-24 2011-12-07 大日本スクリーン製造株式会社 基板処理装置
JP2008137002A (ja) * 2006-11-07 2008-06-19 Fujifilm Corp 塗布膜の乾燥方法及び装置、並びにそれを用いた光学フイルム
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US7727594B2 (en) * 2007-01-19 2010-06-01 Fujifilm Corporation Method for drying coated film, and apparatus therefor
JP5109376B2 (ja) * 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
DE112008000374T5 (de) * 2007-02-08 2010-03-11 Lg Electronics Inc. Heißluft-Erzeugungsvorrichtung und Trockner mit dieser
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP4832368B2 (ja) * 2007-06-19 2011-12-07 東京エレクトロン株式会社 熱処理装置
KR100901716B1 (ko) * 2007-09-04 2009-06-08 엘지전자 주식회사 덕트리스 건조기
JP5029535B2 (ja) * 2007-10-12 2012-09-19 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
JP4994211B2 (ja) * 2007-12-20 2012-08-08 大日本スクリーン製造株式会社 基板処理装置
JP4862903B2 (ja) * 2009-03-06 2012-01-25 東京エレクトロン株式会社 基板処理装置、濾材の再生方法及び記憶媒体
JP2010219228A (ja) * 2009-03-16 2010-09-30 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10788763B2 (en) 2012-07-06 2020-09-29 Asml Netherlands B.V. Lithographic apparatus

Also Published As

Publication number Publication date
JP4527670B2 (ja) 2010-08-18
US20070169373A1 (en) 2007-07-26
US20110236845A1 (en) 2011-09-29
KR101176238B1 (ko) 2012-08-22
TWI320088B (en) 2010-02-01
US7980003B2 (en) 2011-07-19
CN101009213A (zh) 2007-08-01
US8782918B2 (en) 2014-07-22
KR20070078073A (ko) 2007-07-30
CN100565789C (zh) 2009-12-02
JP2007201037A (ja) 2007-08-09

Similar Documents

Publication Publication Date Title
TW200741159A (en) Heat processing apparatus and heat processing method
WO2012136876A8 (en) Atomic layer deposition with plasma source
TW200705558A (en) Apparatus and method for heating substrate and coating and developing system
ATE551438T1 (de) Cvd-reaktor mit absenkbarer prozesskammerdecke
EP2261743A3 (en) Lithographic apparatus and device manufacturing method
SG155179A1 (en) Heated gas box for pecvd applications
TW200741932A (en) Mounting apparatus
TW200732603A (en) The structure and the method of the auxiliary gas exhaust
TW200710952A (en) Film formation method and apparatus for semiconductor process
TW200746339A (en) Substrate supporting unit, and substrate temperature control apparatus and method
EP2088616A3 (en) Substrate mounting table, substrate processing apparatus and substrate temperature control method
WO2008078503A1 (ja) 成膜装置および成膜方法
WO2013064613A3 (de) Cvd-reaktor bzw. substrathalter für einen cvd-reaktor
SG137731A1 (en) Process apparatuses
WO2008146047A3 (en) Improvements relating to direct write and additive manufacturing processes
TW200636819A (en) Heat processing, coating-developing processing apparatus and heat processing method
TW200721357A (en) Movable transfer chamber and substrate-treating apparatus including the same
ATE495278T1 (de) Thermische spritzvorrichtung, sowie ein thermisches spritzverfahren
HK1099605A1 (en) Method and device for thermally treating substrates
MY171373A (en) Apparatus for chemically toughening glass and method of chemically toughening glass using the same
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
TW200723368A (en) Apparatus and method for manufacturing semiconductor device, and electronic apparatus
WO2005113854A3 (en) Apparatus and methods of making nanostructures by inductive heating
WO2008078500A1 (ja) 成膜装置および成膜方法
WO2011035041A3 (en) Substrate transfer mechanism with preheating features