BE817066R - Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes - Google Patents

Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes

Info

Publication number
BE817066R
BE817066R BE146064A BE146064A BE817066R BE 817066 R BE817066 R BE 817066R BE 146064 A BE146064 A BE 146064A BE 146064 A BE146064 A BE 146064A BE 817066 R BE817066 R BE 817066R
Authority
BE
Belgium
Prior art keywords
concurring
deposit
semi
support bodies
heated support
Prior art date
Application number
BE146064A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732359563 external-priority patent/DE2359563C3/de
Application filed filed Critical
Application granted granted Critical
Publication of BE817066R publication Critical patent/BE817066R/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
BE146064A 1973-11-29 1974-06-28 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes BE817066R (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732359563 DE2359563C3 (de) 1973-05-14 1973-11-29 Reaktionsgefäß zum Abscheiden von Halbleitermaterial

Publications (1)

Publication Number Publication Date
BE817066R true BE817066R (fr) 1974-10-16

Family

ID=5899446

Family Applications (1)

Application Number Title Priority Date Filing Date
BE146064A BE817066R (fr) 1973-11-29 1974-06-28 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes

Country Status (7)

Country Link
US (1) US3919968A (fr)
JP (1) JPS5523457B2 (fr)
BE (1) BE817066R (fr)
CA (1) CA1055817A (fr)
DK (1) DK590174A (fr)
IT (1) IT1046164B (fr)
PL (1) PL97254B4 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
DE2834813C2 (de) * 1978-08-09 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Vorrichtung zur Regelung der Verdampfungsrate oxidierbarer Stoffe beim reaktiven Vakuumaufdampfen
JPS61246370A (ja) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk 気相化学反応炉
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
EP0903577A3 (fr) 1997-07-29 2003-03-05 Leybold Inficon, Inc. Surveillance acoustique de consomation
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
WO2003023229A1 (fr) * 2001-09-06 2003-03-20 Ulvac, Inc. Systeme de pompe a vide et procede de fonctionnement d'un systeme de pompe a vide
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
MD4167C1 (ro) * 2010-12-23 2012-12-31 Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова Dispozitiv şi metodă de rezecţie a cartilajului patrulater al septului nazal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate

Also Published As

Publication number Publication date
DK590174A (fr) 1975-07-28
JPS5090285A (fr) 1975-07-19
IT1046164B (it) 1980-06-30
JPS5523457B2 (fr) 1980-06-23
CA1055817A (fr) 1979-06-05
PL97254B4 (fr) 1978-02-28
US3919968A (en) 1975-11-18

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