PL97254B4 - - Google Patents
Info
- Publication number
- PL97254B4 PL97254B4 PL1974175724A PL17572474A PL97254B4 PL 97254 B4 PL97254 B4 PL 97254B4 PL 1974175724 A PL1974175724 A PL 1974175724A PL 17572474 A PL17572474 A PL 17572474A PL 97254 B4 PL97254 B4 PL 97254B4
- Authority
- PL
- Poland
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732359563 DE2359563C3 (de) | 1973-05-14 | 1973-11-29 | Reaktionsgefäß zum Abscheiden von Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL97254B4 true PL97254B4 (xx) | 1978-02-28 |
Family
ID=5899446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1974175724A PL97254B4 (xx) | 1973-11-29 | 1974-11-18 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3919968A (xx) |
| JP (1) | JPS5523457B2 (xx) |
| BE (1) | BE817066R (xx) |
| CA (1) | CA1055817A (xx) |
| DK (1) | DK590174A (xx) |
| IT (1) | IT1046164B (xx) |
| PL (1) | PL97254B4 (xx) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183473A (en) * | 1975-01-20 | 1976-07-22 | Hitachi Ltd | Fujunbutsuno doopinguhoho |
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
| DE2834813C2 (de) * | 1978-08-09 | 1983-01-20 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und Vorrichtung zur Regelung der Verdampfungsrate oxidierbarer Stoffe beim reaktiven Vakuumaufdampfen |
| JPS61246370A (ja) * | 1985-04-23 | 1986-11-01 | Sakaguchi Dennetsu Kk | 気相化学反応炉 |
| JPH0729874B2 (ja) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | 多結晶シリコン製造装置の芯線間接続用ブリッジ |
| EP0903577A3 (en) | 1997-07-29 | 2003-03-05 | Leybold Inficon, Inc. | Acoustic consumption monitor |
| US6402844B1 (en) * | 1998-09-08 | 2002-06-11 | Tokyo Electron Limited | Substrate processing method and substrate processing unit |
| US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
| CN100348865C (zh) * | 2001-09-06 | 2007-11-14 | 爱发科股份有限公司 | 真空排气装置以及真空排气装置的运转方法 |
| JP4527670B2 (ja) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
| MD4167C1 (ro) * | 2010-12-23 | 2012-12-31 | Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова | Dispozitiv şi metodă de rezecţie a cartilajului patrulater al septului nazal |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2854226A (en) * | 1955-03-28 | 1958-09-30 | Surface Combustion Corp | Annealing cover furnace with improved inner cover seal |
| US3460816A (en) * | 1962-01-02 | 1969-08-12 | Gen Electric | Fluxless aluminum brazing furnace |
| DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
| US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
| DE1521494B1 (de) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper |
| DE2033444C3 (de) * | 1970-07-06 | 1979-02-15 | Siemens Ag | Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial |
| US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
-
1974
- 1974-06-28 BE BE146064A patent/BE817066R/xx active
- 1974-10-18 CA CA211,714A patent/CA1055817A/en not_active Expired
- 1974-11-13 DK DK590174A patent/DK590174A/da not_active Application Discontinuation
- 1974-11-18 PL PL1974175724A patent/PL97254B4/xx unknown
- 1974-11-20 US US525640A patent/US3919968A/en not_active Expired - Lifetime
- 1974-11-26 IT IT29815/74A patent/IT1046164B/it active
- 1974-11-29 JP JP13829074A patent/JPS5523457B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5090285A (xx) | 1975-07-19 |
| JPS5523457B2 (xx) | 1980-06-23 |
| BE817066R (fr) | 1974-10-16 |
| CA1055817A (en) | 1979-06-05 |
| IT1046164B (it) | 1980-06-30 |
| DK590174A (xx) | 1975-07-28 |
| US3919968A (en) | 1975-11-18 |