CA1055817A - Reaction vessel for depositing semi-conductor material - Google Patents
Reaction vessel for depositing semi-conductor materialInfo
- Publication number
- CA1055817A CA1055817A CA211,714A CA211714A CA1055817A CA 1055817 A CA1055817 A CA 1055817A CA 211714 A CA211714 A CA 211714A CA 1055817 A CA1055817 A CA 1055817A
- Authority
- CA
- Canada
- Prior art keywords
- gas
- pressure
- reaction vessel
- reaction
- predetermined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000000151 deposition Methods 0.000 title claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000012544 monitoring process Methods 0.000 claims abstract 2
- 239000012495 reaction gas Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 208000036366 Sensation of pressure Diseases 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000007792 gaseous phase Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A B S T R A C T
A reaction vessel is disclosed for depositing semi-conductor material from the gaseous phase onto heated carrier elements. The vessel consists of a metal baseplate, a quartz or glass bell placed thereon, and an autoclave including the bell and the joint thereof with the baseplate, and filled with inert compressed gas. The autoclave is provided with an instrument for moni-toring the pressure therein and acts as a safety device in the event of a drop in pressure.
A reaction vessel is disclosed for depositing semi-conductor material from the gaseous phase onto heated carrier elements. The vessel consists of a metal baseplate, a quartz or glass bell placed thereon, and an autoclave including the bell and the joint thereof with the baseplate, and filled with inert compressed gas. The autoclave is provided with an instrument for moni-toring the pressure therein and acts as a safety device in the event of a drop in pressure.
Description
This invention relates to a reaction vessel or depositing semi-con-ductor material from the gaseous phase.
~ ccording to the invention there is provided a reaction vessel for depositing semi-conductor material, especially silicon, onto heated carrier elements, from an appropriate reaction gas flowing through the said reaction vessel, the reaction vessel being comprised of a sheet or plate shaped base - having the nozzles necessary for the supply and removal of the reaction gases, and holders for the said carrier elements, together with a quartz or glass bell sealed gas-tightly to the said base. This arrangement is characterized in that the quartz or glass bell is pressed against the base by means of compress-ed gas acting directly upon the outside thereof, and thus producing a gas-tlght loint with the support. The base, and the bell located thereon are pre Eerabl~ arranged wlthin a compressed-gas container. The compressed gas used is an inert gas, i.e. nitrogen or a rare gas.
The inventive apparatus obviates having to clamp the bell, which is normally necessary in order to secure it to the base and obtain a gas-tight joint. Moreover, the envelope of compressed gas protects the enviror~ent against an explosion of the bell which, in view of the reaction gases involved, and the products arising from the reaction, is well within the bounds of possi-bility.
If the bell fails or the ~oint between it and the base leaks, largequantities of compressed gas enter the reaction vessel, thus equalizing the pressure between the outside and the inside of the bell. This may damage the carriers, if the latter happen to be in the heated state. It is therefore desirable that the current heating the said carriers and the supply of reaction gas be cut off immediately. The invention preferably provides means for doing this. Such means preferably comprises a device coupled to the reaction vessel, which dev$ce in the event of a drop in pressure of the compressed gas below a predetermined minimal value9 performs at least one of the functions of shutting off the heating of the carrier elements~ cutting off the supply of fresh reaction gas, and actuating a wa~n-ing system, said device responding to either a fall in pressure of the com-pressed gas beyond a predetermined lower limit, a rise in pressure of the gases in the reaction vessel beyond a predetermined upper limit or a differ-ence in said pressures beyond a predetermined limit.
Embodimenks of the invention will now be described, by way of example, with reference to the accompanying drawings, in which:-Figure 1 is a part-sectional, part-diagrclmmatic view of a system embodying the present invention;
Figure 2 is a similar view of an alternative system embodying the invention; and Figure 3 is a fragmentary view showing a third possible embodiment of the invention.
A sheet or plate-shaped base 1, preferably made of silver,has cen-trally disposed thereof a nozzle 2 for the supply of fresh reaction gas and an aperture 3 for the used gas, wikh provision for maintaining gas-tight joints. The carrier elements are held by electrodes 4 which are insulated from each other and are sealed gas-tightly where they pass through base 1.
Carrier elements 5 are in the form of two or more thin, vertical silicon rods of the same length, the lower end of each of each holder being held in the vertical position in each electrode and making good electrical contact there-with, whereas the upper ends of the said holders are conductively connected through a bridge 6 made of a conducting inert materialJ e.g. graphite or silicon. The elec~rodes are connected to a source of power 10, through electrical leads with switching means, the said source supplying khe electrical current required to heat the carrier elements. The reaction chamber is sealed gas-tight by a bell 7 made of quartz~ glass, or similar material and placed on base 1.
When the device is in operation~ carrier elements 5 are heated, in an atmosphere of hydrogen gas, by the heating current supplied by power source .
10, to the high temperature necessary to deposit silicon from a reaction gas such as SiHC13 and SiCl~ diluted with H2, or Si~l~, the said reaction gas being supplied to the glowing carrier elements.
In the interests of safetyg and in order to obtain a gas-tight joint between bell 7 and base 1, reaction vessel 1,7 is placed in an autoclave or pressure vessel 8,9 which is filled with compressed gas while the device is in operation The pressure vessel may consist, for e~ample of a steel box 8 with an apertured bottom, the said box being sealed partly by base 1 and partly by a cover 9. The compressed gas is introduced into the said pressure vessel through a valved line 11.
The embodiment of the invention shown in Figure 1 al.;o includes two pressure gauges 12,13 which are in the form of electrical contacts.
Pressure gauge 12 monitors the pressure in autoclave 8,9, while pressure gauge 13 monitors the pressure in the interior of reaction vessel 1,7.
Pressure gauge 12 is designed in a manner such that if the pressure in the compressed gas drops below the admissible minimal value, the said gauge closes an electrical circuit to a control unit 14. The said control unit may, how-ever, also be activated by pressure gauge 13, as soon as the pressure of the reaction gas in the reaction chamber exceeds a predetermined maximal value.
Activation of control unit }4 results in:
a) disconnecting power source 10 from carrier elements 5 by opening a switch 15 in the operating circuit;
b) shutting off the supply of fresh reaction gas by actuating valve 16, e.g. a magnetic valve;
c) actuating an optical and/or acoustical warning system 17.
It i9 also possible, according to the invention, to use an electri-cal contact-differential-pressure gauge which is acted upon by the gas pres-sure in reaction vessel 1,7 and that in the compressed gas. This arrc~ngement is shown in Figure 2. To this end, the reaction chamber is connected through a bridging tube 18 ~o the compressed-air chamber ou~side bell 7~ Tube 18 is sealed gas-tight by means of a diaphragm 19. ~hen the pressllre in the com-pressed gas drops below a predetermined minimaL value, resilient diaphragm 19 presses so hard against a pressure-sensitive electronic element 20, more par-ticularly a semi-conductor component with a pn-junction, that the latter pro-vides an adequate electrical current to activate control unit 14. This in- ~-creases the supply of compressed gas by a motorized pressure regulator M.
In this embodiment of the invention, therefore, control unit 14 is ; activated as soon as the pressure difference between the compressed gas and the reaction gas drops below a predetermined minimal value.
According to still another configuration of the invention ~Figure 3), provision is made for a capillary connection 2~ and a sensitive flowmeter 25 which monitors the flow through the said capillary, this unit being located between the interior of reaction vessel 1,7 and the chan1ber fi:Lled with com-pressed gas. ~gain, flowmeter 25 is in the form of an electrical contactor, and it activates control unit 14 whenever the flow velocity through the capillary tube exceeds a predetermined absolute value. Since the flow veloc-ity through the said capillary tube is determined by the pressure difference to be monitored, this variant of the invention is easily understood. It should be noted in this connection that the opening of the capillary tube into the reaction chamber proper is located preferably in or near gas-outlet tu~e 3, so that the compressed gas, consisting more particularly o~ nitrogen, can-not in any way impair the semi-conductor material deposited. The bore of capillary tube 24 is so small that, on the one hand, a sensitive ~lowmeter 25 may be controlled by the leakage flow therethrough, while, on the other hand~
the loss of compressed gas or reaction gas through the said capillary tube is as small as possible. The indicators used may also be in the form of sensitive thyristors or cold-controlled elements which heat up automatically to a degree which depends upon the i`low of gas. In this case, it is desirable that the loss of compressed gas due to leakage through the capillary tube be compensa-ted for from time to time.
~ ccording to the invention there is provided a reaction vessel for depositing semi-conductor material, especially silicon, onto heated carrier elements, from an appropriate reaction gas flowing through the said reaction vessel, the reaction vessel being comprised of a sheet or plate shaped base - having the nozzles necessary for the supply and removal of the reaction gases, and holders for the said carrier elements, together with a quartz or glass bell sealed gas-tightly to the said base. This arrangement is characterized in that the quartz or glass bell is pressed against the base by means of compress-ed gas acting directly upon the outside thereof, and thus producing a gas-tlght loint with the support. The base, and the bell located thereon are pre Eerabl~ arranged wlthin a compressed-gas container. The compressed gas used is an inert gas, i.e. nitrogen or a rare gas.
The inventive apparatus obviates having to clamp the bell, which is normally necessary in order to secure it to the base and obtain a gas-tight joint. Moreover, the envelope of compressed gas protects the enviror~ent against an explosion of the bell which, in view of the reaction gases involved, and the products arising from the reaction, is well within the bounds of possi-bility.
If the bell fails or the ~oint between it and the base leaks, largequantities of compressed gas enter the reaction vessel, thus equalizing the pressure between the outside and the inside of the bell. This may damage the carriers, if the latter happen to be in the heated state. It is therefore desirable that the current heating the said carriers and the supply of reaction gas be cut off immediately. The invention preferably provides means for doing this. Such means preferably comprises a device coupled to the reaction vessel, which dev$ce in the event of a drop in pressure of the compressed gas below a predetermined minimal value9 performs at least one of the functions of shutting off the heating of the carrier elements~ cutting off the supply of fresh reaction gas, and actuating a wa~n-ing system, said device responding to either a fall in pressure of the com-pressed gas beyond a predetermined lower limit, a rise in pressure of the gases in the reaction vessel beyond a predetermined upper limit or a differ-ence in said pressures beyond a predetermined limit.
Embodimenks of the invention will now be described, by way of example, with reference to the accompanying drawings, in which:-Figure 1 is a part-sectional, part-diagrclmmatic view of a system embodying the present invention;
Figure 2 is a similar view of an alternative system embodying the invention; and Figure 3 is a fragmentary view showing a third possible embodiment of the invention.
A sheet or plate-shaped base 1, preferably made of silver,has cen-trally disposed thereof a nozzle 2 for the supply of fresh reaction gas and an aperture 3 for the used gas, wikh provision for maintaining gas-tight joints. The carrier elements are held by electrodes 4 which are insulated from each other and are sealed gas-tightly where they pass through base 1.
Carrier elements 5 are in the form of two or more thin, vertical silicon rods of the same length, the lower end of each of each holder being held in the vertical position in each electrode and making good electrical contact there-with, whereas the upper ends of the said holders are conductively connected through a bridge 6 made of a conducting inert materialJ e.g. graphite or silicon. The elec~rodes are connected to a source of power 10, through electrical leads with switching means, the said source supplying khe electrical current required to heat the carrier elements. The reaction chamber is sealed gas-tight by a bell 7 made of quartz~ glass, or similar material and placed on base 1.
When the device is in operation~ carrier elements 5 are heated, in an atmosphere of hydrogen gas, by the heating current supplied by power source .
10, to the high temperature necessary to deposit silicon from a reaction gas such as SiHC13 and SiCl~ diluted with H2, or Si~l~, the said reaction gas being supplied to the glowing carrier elements.
In the interests of safetyg and in order to obtain a gas-tight joint between bell 7 and base 1, reaction vessel 1,7 is placed in an autoclave or pressure vessel 8,9 which is filled with compressed gas while the device is in operation The pressure vessel may consist, for e~ample of a steel box 8 with an apertured bottom, the said box being sealed partly by base 1 and partly by a cover 9. The compressed gas is introduced into the said pressure vessel through a valved line 11.
The embodiment of the invention shown in Figure 1 al.;o includes two pressure gauges 12,13 which are in the form of electrical contacts.
Pressure gauge 12 monitors the pressure in autoclave 8,9, while pressure gauge 13 monitors the pressure in the interior of reaction vessel 1,7.
Pressure gauge 12 is designed in a manner such that if the pressure in the compressed gas drops below the admissible minimal value, the said gauge closes an electrical circuit to a control unit 14. The said control unit may, how-ever, also be activated by pressure gauge 13, as soon as the pressure of the reaction gas in the reaction chamber exceeds a predetermined maximal value.
Activation of control unit }4 results in:
a) disconnecting power source 10 from carrier elements 5 by opening a switch 15 in the operating circuit;
b) shutting off the supply of fresh reaction gas by actuating valve 16, e.g. a magnetic valve;
c) actuating an optical and/or acoustical warning system 17.
It i9 also possible, according to the invention, to use an electri-cal contact-differential-pressure gauge which is acted upon by the gas pres-sure in reaction vessel 1,7 and that in the compressed gas. This arrc~ngement is shown in Figure 2. To this end, the reaction chamber is connected through a bridging tube 18 ~o the compressed-air chamber ou~side bell 7~ Tube 18 is sealed gas-tight by means of a diaphragm 19. ~hen the pressllre in the com-pressed gas drops below a predetermined minimaL value, resilient diaphragm 19 presses so hard against a pressure-sensitive electronic element 20, more par-ticularly a semi-conductor component with a pn-junction, that the latter pro-vides an adequate electrical current to activate control unit 14. This in- ~-creases the supply of compressed gas by a motorized pressure regulator M.
In this embodiment of the invention, therefore, control unit 14 is ; activated as soon as the pressure difference between the compressed gas and the reaction gas drops below a predetermined minimal value.
According to still another configuration of the invention ~Figure 3), provision is made for a capillary connection 2~ and a sensitive flowmeter 25 which monitors the flow through the said capillary, this unit being located between the interior of reaction vessel 1,7 and the chan1ber fi:Lled with com-pressed gas. ~gain, flowmeter 25 is in the form of an electrical contactor, and it activates control unit 14 whenever the flow velocity through the capillary tube exceeds a predetermined absolute value. Since the flow veloc-ity through the said capillary tube is determined by the pressure difference to be monitored, this variant of the invention is easily understood. It should be noted in this connection that the opening of the capillary tube into the reaction chamber proper is located preferably in or near gas-outlet tu~e 3, so that the compressed gas, consisting more particularly o~ nitrogen, can-not in any way impair the semi-conductor material deposited. The bore of capillary tube 24 is so small that, on the one hand, a sensitive ~lowmeter 25 may be controlled by the leakage flow therethrough, while, on the other hand~
the loss of compressed gas or reaction gas through the said capillary tube is as small as possible. The indicators used may also be in the form of sensitive thyristors or cold-controlled elements which heat up automatically to a degree which depends upon the i`low of gas. In this case, it is desirable that the loss of compressed gas due to leakage through the capillary tube be compensa-ted for from time to time.
Claims (12)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. Apparatus for depositing semi-conductor material, on heated carrier elements, from an appropriate reaction gas flowing through a reaction vessel, the reaction vessel comprised of a sheet or plate-shaped base having nozzles for the supply and removal of reaction gas, and holders for the said carrier elements, together with a quartz or glass bell sealed gas-tightly to the said base, means for supplying a pressurized gas from a source for applying a gas pressure upon the outside surface of the bell and thus producing a gas-tight joint with the support.
2. Apparatus according to claim 1, characterized in that the support and the bell are disposed in the interior of a pressure vessel which is closed during the depositing process and filled with inert gas.
3. Apparatus according to either claim 1 or 2, characterized in that the support for the quartz or glass bell is a silver plate.
4. Apparatus according to claim 1 or 2 characterized in that the pres-surized gas in nitrogen.
5. Apparatus according to claim 1, characterized by a control unit that can perform at least one of the functions of shutting off the heating of the carrier elements, cutting off the supply of fresh reaction gas, and actuating a warning system, said device responding to either a fall in pres-sure of the pressurized gas beyond a predetermined lower limit, a rise in pressure of the gases in the reaction vessel beyond a predetermined upper limit or a difference in said pressures beyond a predetermined limit.
6. Apparatus according to claim 5, characterized in that said device comprises a pressure gauge connected to the interior of the reaction vessel and adapted to come into operation when the pressure of the reaction gas in the reaction vessel rises above a predetermined maximal value.
7. Apparatus according to claim 5, said device comprising a differen-tial pressure sensor, which is controlled directly by the difference in pres-sure between the pressurized gas and the gas in the reaction chamber, and which comes into operation when the said difference drops below a predetermined value.
8. Apparatus according to claim 6 said device comprising a differen-tial pressure sensor, which is controlled directly by the difference in pres-sure between the pressurized gas and the gas in the reaction chamber, and which comes into operation when the said difference drops below a predeter-mined value.
9. Apparatus according to claim 1, 2 or 5 characterized in that a con-tact pressure gauge, which acts at the same time as a switch, is provided for monitoring the pressure in the pressurized gas.
10. Apparatus according to claim 7 or 8, comprising a tube with a gas-tight diaphragm connecting the said reaction vessel to the said pressure vessel and a pressure-sensitive electronic switching element coupled to the said diaphragm in a manner such that said element switches on a differential pressure gauge activating the said device when the pressure difference between the two gases falls below a predetermined limiting value.
11. Apparatus according to claim 5, characterized in that the said control unit increases the pressure of the pressurized gas up to a preselected maximal pressure, depending upon the differential pressure.
12. Apparatus according to claim 7 or 8, comprising a capillary tube in the connection between the said reaction vessel and the said pressure vessel and a flowmeter which monitors the gas flow through this capillary tube in the form of an electrical contactor which, when the flow velocity drops below a predetermined limiting value, activates a differential pressure gauge which in turn actuates said device.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732359563 DE2359563C3 (en) | 1973-05-14 | 1973-11-29 | Reaction vessel for depositing semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1055817A true CA1055817A (en) | 1979-06-05 |
Family
ID=5899446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA211,714A Expired CA1055817A (en) | 1973-11-29 | 1974-10-18 | Reaction vessel for depositing semi-conductor material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3919968A (en) |
| JP (1) | JPS5523457B2 (en) |
| BE (1) | BE817066R (en) |
| CA (1) | CA1055817A (en) |
| DK (1) | DK590174A (en) |
| IT (1) | IT1046164B (en) |
| PL (1) | PL97254B4 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4167C1 (en) * | 2010-12-23 | 2012-12-31 | Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова | Device and method for excision of quadrangular cartilage of the nasal septum |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183473A (en) * | 1975-01-20 | 1976-07-22 | Hitachi Ltd | Fujunbutsuno doopinguhoho |
| DE2518853C3 (en) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for separating elemental silicon from a reaction gas |
| DE2834813C2 (en) * | 1978-08-09 | 1983-01-20 | Leybold-Heraeus GmbH, 5000 Köln | Method and device for regulating the evaporation rate of oxidizable substances during reactive vacuum evaporation |
| JPS61246370A (en) * | 1985-04-23 | 1986-11-01 | Sakaguchi Dennetsu Kk | Gaseous phase chemical reaction furnace |
| JPH0729874B2 (en) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | Bridge for connecting core wires of polycrystalline silicon manufacturing equipment |
| EP0903577A3 (en) | 1997-07-29 | 2003-03-05 | Leybold Inficon, Inc. | Acoustic consumption monitor |
| US6402844B1 (en) * | 1998-09-08 | 2002-06-11 | Tokyo Electron Limited | Substrate processing method and substrate processing unit |
| US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
| CN100348865C (en) * | 2001-09-06 | 2007-11-14 | 爱发科股份有限公司 | Vacuum exhaust appts. and drive method of vacuum appts. |
| JP4527670B2 (en) | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment method, control program, and computer-readable storage medium |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2854226A (en) * | 1955-03-28 | 1958-09-30 | Surface Combustion Corp | Annealing cover furnace with improved inner cover seal |
| US3460816A (en) * | 1962-01-02 | 1969-08-12 | Gen Electric | Fluxless aluminum brazing furnace |
| DE1244733B (en) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Device for growing monocrystalline semiconductor material layers on monocrystalline base bodies |
| US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
| DE1521494B1 (en) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Device for diffusing foreign matter into semiconductor bodies |
| DE2033444C3 (en) * | 1970-07-06 | 1979-02-15 | Siemens Ag | Device for diffusing dopants into wafers made of semiconductor material |
| US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
-
1974
- 1974-06-28 BE BE146064A patent/BE817066R/en active
- 1974-10-18 CA CA211,714A patent/CA1055817A/en not_active Expired
- 1974-11-13 DK DK590174A patent/DK590174A/da not_active Application Discontinuation
- 1974-11-18 PL PL1974175724A patent/PL97254B4/xx unknown
- 1974-11-20 US US525640A patent/US3919968A/en not_active Expired - Lifetime
- 1974-11-26 IT IT29815/74A patent/IT1046164B/en active
- 1974-11-29 JP JP13829074A patent/JPS5523457B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4167C1 (en) * | 2010-12-23 | 2012-12-31 | Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова | Device and method for excision of quadrangular cartilage of the nasal septum |
Also Published As
| Publication number | Publication date |
|---|---|
| US3919968A (en) | 1975-11-18 |
| DK590174A (en) | 1975-07-28 |
| JPS5523457B2 (en) | 1980-06-23 |
| BE817066R (en) | 1974-10-16 |
| IT1046164B (en) | 1980-06-30 |
| PL97254B4 (en) | 1978-02-28 |
| JPS5090285A (en) | 1975-07-19 |
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