BE817066R - REACTION ENCLOSURE FOR THE DEPOSIT OF SEMI-CONCURRING MATERIAL ON HEATED SUPPORT BODIES - Google Patents

REACTION ENCLOSURE FOR THE DEPOSIT OF SEMI-CONCURRING MATERIAL ON HEATED SUPPORT BODIES

Info

Publication number
BE817066R
BE817066R BE146064A BE146064A BE817066R BE 817066 R BE817066 R BE 817066R BE 146064 A BE146064 A BE 146064A BE 146064 A BE146064 A BE 146064A BE 817066 R BE817066 R BE 817066R
Authority
BE
Belgium
Prior art keywords
concurring
deposit
semi
support bodies
heated support
Prior art date
Application number
BE146064A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732359563 external-priority patent/DE2359563C3/en
Application filed filed Critical
Application granted granted Critical
Publication of BE817066R publication Critical patent/BE817066R/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
BE146064A 1973-11-29 1974-06-28 REACTION ENCLOSURE FOR THE DEPOSIT OF SEMI-CONCURRING MATERIAL ON HEATED SUPPORT BODIES BE817066R (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732359563 DE2359563C3 (en) 1973-05-14 1973-11-29 Reaction vessel for depositing semiconductor material

Publications (1)

Publication Number Publication Date
BE817066R true BE817066R (en) 1974-10-16

Family

ID=5899446

Family Applications (1)

Application Number Title Priority Date Filing Date
BE146064A BE817066R (en) 1973-11-29 1974-06-28 REACTION ENCLOSURE FOR THE DEPOSIT OF SEMI-CONCURRING MATERIAL ON HEATED SUPPORT BODIES

Country Status (7)

Country Link
US (1) US3919968A (en)
JP (1) JPS5523457B2 (en)
BE (1) BE817066R (en)
CA (1) CA1055817A (en)
DK (1) DK590174A (en)
IT (1) IT1046164B (en)
PL (1) PL97254B4 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
DE2834813C2 (en) * 1978-08-09 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Method and device for regulating the evaporation rate of oxidizable substances during reactive vacuum evaporation
JPS61246370A (en) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk Gaseous phase chemical reaction furnace
JPH0729874B2 (en) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 Bridge for connecting core wires of polycrystalline silicon manufacturing equipment
EP0903577A3 (en) 1997-07-29 2003-03-05 Leybold Inficon, Inc. Acoustic consumption monitor
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
CN100348865C (en) * 2001-09-06 2007-11-14 爱发科股份有限公司 Vacuum exhaust appts. and drive method of vacuum appts.
JP4527670B2 (en) 2006-01-25 2010-08-18 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method, control program, and computer-readable storage medium
MD4167C1 (en) * 2010-12-23 2012-12-31 Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова Device and method for excision of quadrangular cartilage of the nasal septum

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
DE1244733B (en) * 1963-11-05 1967-07-20 Siemens Ag Device for growing monocrystalline semiconductor material layers on monocrystalline base bodies
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
DE1521494B1 (en) * 1966-02-25 1970-11-26 Siemens Ag Device for diffusing foreign matter into semiconductor bodies
DE2033444C3 (en) * 1970-07-06 1979-02-15 Siemens Ag Device for diffusing dopants into wafers made of semiconductor material
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate

Also Published As

Publication number Publication date
US3919968A (en) 1975-11-18
CA1055817A (en) 1979-06-05
DK590174A (en) 1975-07-28
JPS5523457B2 (en) 1980-06-23
IT1046164B (en) 1980-06-30
PL97254B4 (en) 1978-02-28
JPS5090285A (en) 1975-07-19

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